CN211170967U - Improved temperature field for 60KG sapphire crystal growth - Google Patents
Improved temperature field for 60KG sapphire crystal growth Download PDFInfo
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- CN211170967U CN211170967U CN201921847388.3U CN201921847388U CN211170967U CN 211170967 U CN211170967 U CN 211170967U CN 201921847388 U CN201921847388 U CN 201921847388U CN 211170967 U CN211170967 U CN 211170967U
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Abstract
The utility model discloses an improved temperature field for 60KG sapphire crystal growth, which comprises a heating component, a supporting device, a bottom heat shield, a crucible component and an upper end heat insulation component; the supporting device comprises: the supporting device comprises a base, wherein an annular zirconia fiber thermal insulation layer is arranged on the upper surface of the base, an external connecting barrel is arranged on the inner side of the annular zirconia fiber thermal insulation layer, and a protective tungsten barrel is arranged on the inner side of the external connecting barrel; the crucible assembly: the crucible assembly is arranged in the center of the upper surface of the base and is arranged inside the protective tungsten barrel; bottom heat shield: the bottom heat shield is arranged on the upper surface of the base, and can insulate heat to the bottom of the equipment through the middle zirconia fiber heat insulation layer, so that the heat preservation effect is more comprehensive, the improved temperature field for the growth of the 60KG sapphire crystal is simple in structure, convenient to produce, better in heat preservation effect, more comprehensive in heat preservation and capable of saving a large amount of energy.
Description
Technical Field
The utility model relates to a single crystal growing furnace thermal field technical field specifically is a 60KG sapphire crystal growth uses improved generation temperature field.
Background
Sapphire single crystals have excellent mechanical, optical, thermal, mechanical and other properties, are widely used as semiconductor substrates, consumer electronics, aerospace, satellite space technology, window materials of high-intensity laser and the like, have small thermal field temperature gradient and uneven temperature distribution, and cause the problems of overlarge energy consumption, low production efficiency, poor heat preservation performance, more loss and the like, thus being incapable of meeting the requirements of people.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is to overcome current defect, provide a 60KG sapphire crystal growth uses improved generation temperature field, simple structure, production is convenient, not only makes the heat preservation effect better, and it is more comprehensive to keep warm moreover, can save a large amount of energy, can effectively solve the problem in the background art.
In order to achieve the above object, the utility model provides a following technical scheme: an improved temperature field for growing a 60KG sapphire crystal comprises a heating assembly, a supporting device, a bottom heat shield, a crucible assembly and an upper end heat insulation assembly;
the supporting device comprises: the supporting device comprises a base, wherein an external connecting barrel is arranged on the upper surface of the base, an annular zirconia fiber heat-insulating layer is arranged on the inner side of the external connecting barrel, and a protective tungsten barrel is arranged on the inner side of the annular zirconia fiber heat-insulating layer;
the crucible assembly: the crucible assembly is arranged in the center of the upper surface of the base and is arranged inside the protective tungsten barrel;
bottom heat shield: the bottom heat shield is arranged on the upper surface of the base, and a through hole corresponding to the crucible assembly is formed in the bottom heat shield;
heating the assembly: the heating assembly comprises a heating tungsten filament, the heating tungsten filament is connected with the outer side of the upper end of the supporting rod of the crucible assembly, a supporting ring is arranged at the upper end of the heating tungsten filament, and an electrode is arranged on the side surface of the supporting ring;
the upper end heat insulation assembly comprises an L-shaped frame, fixed rods are uniformly arranged on the L-shaped frame, a heat insulation screen is arranged between the lower ends of the fixed rods, a through hole is formed in the middle of the heat insulation screen, a heat insulation cover screen is arranged below the heat insulation screen, and a conical through hole is formed in the middle of the heat insulation cover screen;
wherein: the seed chuck is positioned in the middle of the through hole of the heat shield.
Further, the protection tungsten bucket is the built-up fitting to protection tungsten bucket includes two connection buckets, connects mutual joint about the bucket, makes through two connection buckets to make more convenient to protection tungsten bucket equipment, makes the installation more firm.
Further, the heat shield includes lower extreme molybdenum sheet layer at the end, the upper surface of lower extreme molybdenum sheet layer is equipped with middle part zirconia fibre insulating layer, and the upper surface of middle part zirconia fibre insulating layer is equipped with upper end molybdenum sheet layer, can insulate against heat through middle part zirconia fibre insulating layer for thermal-insulated effect is better, prevents heat loss.
Further, the heating tungsten filament is the net bucket form, and the heating tungsten filament lower extreme is equipped with three annular heating net, makes through three annular heating net better to crucible heating effect, provides convenience for people.
Compared with the prior art, the beneficial effects of the utility model are that: this 60KG sapphire crystal growth is with improved generation temperature field, has following benefit:
1. the utility model discloses on set up annular zirconia fibre insulating layer, made the heat preservation effect better through annular zirconia fibre insulating layer to this can reduce thermal loss, saved a large amount of electric energy, can satisfy people's demand.
2. The utility model discloses on set up thermal-insulated lid screen and heat screen, can keep warm to the upper end of equipment through thermal-insulated lid screen and heat screen for thermal-insulated effect is better, can effectual improvement yields, has reduced the cost of production.
3. The utility model discloses on set up middle part zirconia fibre insulating layer, can insulate against heat bottom the equipment through middle part zirconia fibre insulating layer for the heat preservation effect is more comprehensive, this 60KG sapphire crystal growth uses improved generation temperature field simple structure, and production is convenient, not only makes the heat preservation effect better, keeps warm moreover more comprehensively, can save a large amount of energy.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
In the figure, 1 heating component, 11 electrodes, 12 support rings, 13 heating tungsten wires, 2 supporting devices, 21 external connecting barrels, 22 annular zirconium oxide fiber heat-insulating layers, 23 bases, 24 protective tungsten barrels, 3 bottom heat-insulating screens, 31 lower end molybdenum sheet layers, 32 middle zirconium oxide fiber heat-insulating layers, 33 upper end molybdenum sheet layers, 4 crucible components, 41 supporting rods, 42 crucibles, 5 upper end heat-insulating components, 51 heat-insulating cover screens, 52 heat-insulating screens, 53L type frames and 6 seed crystal chucks are arranged.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Example one
Referring to fig. 1, the present invention provides a technical solution: an improved temperature field for growing a 60KG sapphire crystal comprises a heating assembly 1, a supporting device 2, a bottom heat shield 3, a crucible assembly 4 and an upper end heat insulation assembly 5;
the supporting device 2: the supporting device 2 comprises a base 23, an external connecting barrel 21 is arranged on the upper surface of the base 23, a ring-shaped zirconia fiber heat-insulating layer 22 is arranged on the inner side of the external connecting barrel 21, a protective tungsten barrel 24 is arranged on the inner side of the ring-shaped zirconia fiber heat-insulating layer 22, and the heat-insulating effect is better through the ring-shaped zirconia fiber heat-insulating layer 22, so that the heat loss can be reduced, a large amount of electric energy is saved, and the requirements of people can be met;
the crucible assembly 4: the crucible assembly 4 is arranged in the center of the upper surface of the base 23, and the crucible assembly 4 is arranged inside the protective tungsten barrel 24;
bottom heat shield 3: the bottom heat shield 3 is arranged on the upper surface of the base 23, and a through hole corresponding to the crucible assembly 4 is arranged on the bottom heat shield 3;
heating component 1: the heating assembly 1 comprises a heating tungsten wire 13, the heating tungsten wire 13 is connected with the outer side of the upper end of a supporting rod 41 of the crucible assembly 4, a supporting ring 12 is arranged at the upper end of the heating tungsten wire 13, and an electrode 11 is arranged on the side surface of the supporting ring 12;
the upper end heat insulation assembly 5 is characterized in that the upper end heat insulation assembly 5 comprises an L-shaped frame 53, fixing rods are uniformly arranged on the L-shaped frame 53, a heat insulation screen 52 is arranged between the lower ends of the fixing rods, a through hole is formed in the middle of the heat insulation screen 52, a heat insulation cover screen 51 is arranged below the heat insulation screen 52, a conical through hole is formed in the middle of the heat insulation cover screen 51, the upper end of the equipment can be insulated through the heat insulation cover screen 51 and the heat insulation screen 52, and the heat insulation effect is better;
wherein: the seed chuck 6 is positioned in the middle of the through hole of the heat shield 52, the protective tungsten barrel 24 is assembled, the protective tungsten barrel 24 comprises two connecting barrels which are vertically clamped with each other, the protective tungsten barrel 24 is more conveniently assembled through the two connecting barrels and is firmer to install, the bottom heat shield 3 comprises a lower molybdenum sheet layer 31, the upper surface of the lower molybdenum sheet layer 31 is provided with a middle zirconia fiber heat-insulating layer 32, the upper surface of the middle zirconia fiber heat-insulating layer 32 is provided with an upper molybdenum sheet layer 33, heat insulation can be carried out through the middle zirconia fiber heat-insulating layer 32, the heat insulation effect is better, heat loss is prevented, the heating tungsten wire 13 is in a net barrel shape, the lower end of the heating tungsten wire 13 is provided with three annular heating nets, the heating effect on the crucible 42 is better through the three annular heating nets, convenience is provided for people, the improved temperature field for the growth of the 60KG sapphire crystal is simple in structure, the production is convenient, the heat preservation effect is better, the heat preservation is more comprehensive, and a large amount of energy can be saved.
When in use: make the heat preservation effect better through annular zirconia fibre insulating layer 22 to this can reduce thermal loss, can insulate against heat bottom the equipment through middle part zirconia fibre insulating layer 32, keeps warm through the upper end of thermal-insulated lid screen 51 and heat shield 52 to equipment, and keeps warm through the upper end of thermal-insulated lid screen 51 and heat shield 52 to equipment.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (4)
1. An improved temperature field for 60KG sapphire crystal growth, which is characterized in that: comprises a heating component, a supporting device, a bottom heat shield, a crucible component and an upper end heat insulation component;
the supporting device comprises: the supporting device comprises a base, wherein an annular zirconia fiber thermal insulation layer is arranged on the upper surface of the base, an external connecting barrel is arranged on the inner side of the annular zirconia fiber thermal insulation layer, and a protective tungsten barrel is arranged on the inner side of the external connecting barrel;
the crucible assembly: the crucible assembly is arranged in the center of the upper surface of the base and is arranged inside the protective tungsten barrel;
bottom heat shield: the bottom heat shield is arranged on the upper surface of the base, and a through hole corresponding to the crucible assembly is formed in the bottom heat shield;
heating the assembly: the heating assembly comprises a heating tungsten filament, the heating tungsten filament is connected with the outer side of the upper end of the supporting rod of the crucible assembly, a supporting ring is arranged at the upper end of the heating tungsten filament, and an electrode is arranged on the side surface of the supporting ring;
the upper end heat insulation assembly comprises an L-shaped frame, fixed rods are uniformly arranged on the L-shaped frame, a heat insulation screen is arranged between the lower ends of the fixed rods, a through hole is formed in the middle of the heat insulation screen, a heat insulation cover screen is arranged below the heat insulation screen, and a conical through hole is formed in the middle of the heat insulation cover screen;
wherein: the seed chuck is positioned in the middle of the through hole of the heat shield.
2. The improved temperature field for 60KG sapphire crystal growth as claimed in claim 1, wherein: the protection tungsten bucket is the built-up package to the protection tungsten bucket includes two and connects the bucket, connects bucket mutual joint from top to bottom.
3. The improved temperature field for 60KG sapphire crystal growth as claimed in claim 1, wherein: the bottom heat shield comprises a lower molybdenum sheet layer, a middle zirconia fiber heat insulation layer is arranged on the upper surface of the lower molybdenum sheet layer, and an upper molybdenum sheet layer is arranged on the upper surface of the middle zirconia fiber heat insulation layer.
4. The improved temperature field for 60KG sapphire crystal growth as claimed in claim 1, wherein: the heating tungsten filament is in a net barrel shape, and three annular heating nets are arranged at the lower end of the heating tungsten filament.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921847388.3U CN211170967U (en) | 2019-10-30 | 2019-10-30 | Improved temperature field for 60KG sapphire crystal growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921847388.3U CN211170967U (en) | 2019-10-30 | 2019-10-30 | Improved temperature field for 60KG sapphire crystal growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211170967U true CN211170967U (en) | 2020-08-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921847388.3U Active CN211170967U (en) | 2019-10-30 | 2019-10-30 | Improved temperature field for 60KG sapphire crystal growth |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211170967U (en) |
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2019
- 2019-10-30 CN CN201921847388.3U patent/CN211170967U/en active Active
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