CN210956717U - Circular vertical structure LED chip - Google Patents
Circular vertical structure LED chip Download PDFInfo
- Publication number
- CN210956717U CN210956717U CN201921910433.5U CN201921910433U CN210956717U CN 210956717 U CN210956717 U CN 210956717U CN 201921910433 U CN201921910433 U CN 201921910433U CN 210956717 U CN210956717 U CN 210956717U
- Authority
- CN
- China
- Prior art keywords
- electrode
- layer
- metal layer
- light
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model discloses a circular vertical structure LED chip, which comprises a bonding substrate, a metal layer, a luminous epitaxial layer, an N electrode and an insulating protective layer; the bonding substrate, the metal layer and the light-emitting epitaxial layer are sequentially and coaxially laminated from bottom to top, and the light-emitting epitaxial layer is circular; the insulating protective layer is sequentially sleeved outside the protective layer, the metal layer and the light-emitting epitaxial layer in a stepped manner; the N electrode comprises a ring electrode and a cross electrode which are positioned on the inner periphery and an electrode cover which is positioned on the outer periphery; the annular electrode is electrically connected with the cross electrode coaxially and is attached to the light-emitting epitaxial layer coaxially, and the electrode cover is electrically connected with the cross electrode and extends along the insulating protective layer. The LED chip with the circular vertical structure has more uniform current density on the light-emitting surface and has larger selection space at the position of the bonding wire.
Description
Technical Field
The utility model relates to a LED technical field, concretely relates to circular vertical structure LED chip.
Background
Because of its advantages of high luminous efficiency, long service life and environmental protection, LEDs have been widely used in the fields of solid-state lighting, display, mobile lighting, etc. The vertical structure LED chip has the natural advantages of good current diffusion degree, excellent heat dissipation performance, large driving current and the like, and is one of important LED chip structures.
The high-power LED of mainstream is vertical structure LED almost in the existing market, two electrodes of vertical structure LED are respectively in LED's both sides, because the light-emitting needs, the N electrode is the shape of electrode line usually, and connect it through the electrode pad that sets up on going out the plain noodles, the electrode pad has occupied very big area, it is not 360 symmetries to cause going out the plain noodles, this luminous light type that needs downstream producer to match the chip on the optical design of lamps and lanterns, the degree of difficulty that has increased lamps and lanterns optical design to a certain extent, and the variety of lamps and lanterns optical design has been restricted.
SUMMERY OF THE UTILITY MODEL
In order to overcome the defects of the prior art, one of the purposes of the utility model is to provide a circular vertical structure LED chip, which can effectively solve the problems of asymmetry of luminous spots and difficulty in optical design of the traditional vertical structure LED chip.
The second objective of the present invention is to provide a method for manufacturing the circular vertical structure LED chip, wherein the circular vertical structure LED chip manufactured by the method has a completely central symmetric light emitting surface, and the optical design is simplified.
The utility model discloses an one of the purpose adopts following technical scheme to realize:
a circular LED chip with a vertical structure comprises a bonding substrate, a metal layer, a light-emitting epitaxial layer, an N electrode and an insulating protective layer;
the bonding substrate, the metal layer and the light-emitting epitaxial layer are sequentially and coaxially laminated from bottom to top, and the light-emitting epitaxial layer is circular; the insulating protective layer is sequentially sleeved outside the protective layer, the metal layer and the light-emitting epitaxial layer in a stepped manner;
the N electrode comprises a ring electrode and a cross electrode which are positioned on the inner periphery and an electrode cover which is positioned on the outer periphery; the annular electrode is electrically connected with the cross electrode coaxially and is attached to the light-emitting epitaxial layer coaxially, and the electrode cover is electrically connected with the cross electrode and extends along the insulating protective layer.
This circular vertical structure LED chip sets up the light-emitting epitaxial layer into circular mode in order to obtain the play plain noodles of complete symmetry promptly, simultaneously through making the inside cross and the ring structure that are the N electrode in order to realize regional electric current at luminous department extension layer surface evenly distributed, the electrode lid region that the N electrode extends along insulating protective layer can be regarded as the pad, supports the multiple spot bonding wire, is favorable to promoting the electric current divergence of chip by a wide margin.
Further, the metal layer includes a protective metal layer and a reflective metal layer stacked together, wherein the protective metal layer is stacked with the bonding substrate, and the reflective metal layer is stacked with the light emitting epitaxial structure. The mode of adopting two-layer metal, on the one hand for luminous epitaxial layer provides stronger hardness to support, and on the other hand improves the luminous efficiency of metal and improves the radiating efficiency. Further, the side length of the reflective metal layer is smaller than the side length of the protective metal layer. Namely, the metal layer is internally provided with steps, so that the insulating layer can form stronger insulating coating strength in the metal layer at the later stage. Specifically, the protective metal layer is made of TiW, and the reflective metal layer is formed by alternately growing Ag layers and Ni layers. TiW has better high temperature resistance and electrical conductivity, and the reflective metal layer has higher specular reflection effect.
Further, the insulating protective layer extends from the side wall of the light-emitting epitaxial layer to the top of the light-emitting epitaxial layer. The insulating protective layer is coated on the top of the light-emitting epitaxial layer, so that the side wall can be effectively prevented from being exposed, and the N-P conduction caused by the diffusion of the N electrode metal to the side wall of the step to cause electric leakage is avoided.
Further, the ratio of the inner diameter of the ring electrode to the inner diameter of the cross electrode is 0.4-0.6: 1.
further, the bonding substrate is a conductive silicon substrate; the insulating protection layer is made of silicon dioxide, and the N electrode is made of one or a combination of Cr, Al, Ni, Ti, Au and Pt.
Further, the thickness of the metal layer is 200-2000 nm; the thickness of the insulating protection layer is 100-3000 nm; the thickness of the N electrode is 50-5000nm, and the line width is 5-50 μm.
The second purpose of the utility model is realized by adopting the following technical scheme:
a preparation method of the LED chip with the circular vertical structure comprises the following steps:
1) preparing an LED epitaxial wafer: sequentially growing a non-doped GaN layer, an n-type GaN layer, a multi-quantum well light-emitting layer and a p-type GaN layer on the surface of the growth substrate to obtain an LED epitaxial wafer;
2) manufacturing a metal layer: sequentially growing metal layers on the surface of the p-type GaN layer of the LED epitaxial wafer;
3) manufacturing a circular light-emitting epitaxial layer: removing the epitaxial layer outside the circular area of the LED epitaxial wafer;
4) preparing an insulating protective layer step: depositing insulating layers on the top surface and the side surface of the chip obtained in the step 3), and removing the insulating layer on the surface of the light-emitting epitaxial layer to obtain an insulating protective layer step;
5) preparing an N electrode: and depositing a cross electrode and a ring electrode by taking the circle center of the luminous epitaxial layer as the center, and forming an N electrode on the periphery of the cross electrode along the insulating protection layer step edge electrode cover to obtain the LED chip with the circular vertical structure.
Further, in the step 5), an N electrode is deposited through electron beam evaporation or magnetron sputtering, and a cross electrode and a ring electrode are obtained through a photoetching stripping process.
Compared with the prior art, the beneficial effects of the utility model reside in that:
the utility model provides a circular vertical structure LED chip sets up the light-emitting epitaxial layer into circular mode in order to obtain the play plain noodles of complete symmetry, simultaneously through making the inside cross and the ring structure that are the N electrode realize that regional current evenly distributes on the light-emitting extension layer surface, the electrode lid region that the N electrode extends along insulating protective layer can be as the pad, supports the multiple spot bonding wire, is favorable to promoting the electric current divergence of chip by a wide margin;
the utility model provides a circular vertical structure LED chip, the insulating protective layer that sets up between luminous epitaxial layer and the P electrode is step lid form, can provide the high physics of security and keep apart on the one hand, and on the other hand can provide stronger mechanics and support, has greatly improved the fail safe nature of product.
Drawings
Fig. 1 is a schematic longitudinal sectional structure view of a circular vertical structure LED chip of embodiment 1;
fig. 2 is a top view of the circular vertical structure LED chip of embodiment 1.
In the figures, the various reference numbers: 01. an N electrode; 02. an insulating protective layer; 03. a light emitting epitaxial layer; 04. a reflective metal layer; 05. a protective metal layer; 06. and bonding the substrate.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific embodiments, and it should be noted that any combination of the following described embodiments or technical features can be used to form a new embodiment without conflict.
The utility model provides a circular vertical structure LED chip, as shown in figure 1 and figure 2, comprising a bonding substrate 06, a metal layer, a luminous epitaxial layer 03, an N electrode 01 and an insulating protective layer 02;
the bonding substrate 06, the metal layer and the light-emitting epitaxial layer 03 are coaxially laminated from bottom to top in sequence, and the light-emitting epitaxial layer 03 is circular; the insulating protective layer 02 is sequentially sleeved outside the protective layer, the metal layer and the light-emitting epitaxial layer 03 in a stepped manner;
the N electrode 01 comprises a ring electrode and a cross electrode which are positioned on the inner periphery and an electrode cover which is positioned on the outer periphery; the ring electrode is coaxially and electrically connected with the cross electrode and coaxially attached to the light-emitting epitaxial layer 03, and the electrode cover is electrically connected with the cross electrode and extends along the insulating protective layer 02.
The utility model also provides a preparation method of foretell circular vertical structure LED chip, including following step:
1) preparing an LED epitaxial wafer: sequentially growing a non-doped GaN layer, an n-type GaN layer, a multi-quantum well light-emitting layer and a p-type GaN layer on the surface of the growth substrate to obtain an LED epitaxial wafer;
2) manufacturing a metal layer: sequentially growing metal layers on the surface of the p-type GaN layer of the LED epitaxial wafer;
3) manufacturing a circular light-emitting epitaxial layer 03: removing the epitaxial layer outside the circular area of the LED epitaxial wafer;
4) preparing an insulating protective layer 02 step: depositing insulating layers on the top surface and the side surface of the chip obtained in the step 3), and removing the insulating layer on the surface of the light-emitting epitaxial layer 03 to obtain an insulating protective layer 02 step;
5) preparation of an N electrode 01: and depositing a cross electrode and a ring electrode by taking the circle center of the luminous epitaxial layer 03 as the center, and forming an N electrode 01 along an electrode cover on the periphery of the cross electrode along the insulating protection layer 02 step to manufacture the LED chip with the circular vertical structure.
In the following detailed description, references to upper, lower, etc. words having an orientation-indicative meaning should be interpreted merely as an indication of the orientation of the figure.
Example 1:
a circular LED chip with a vertical structure is shown in figure 1 and comprises a bonding substrate 06, a metal layer, a light-emitting epitaxial layer 03, an N electrode 01 and an insulating protective layer 02;
the bonding substrate 06, the metal layer and the light-emitting epitaxial layer 03 are coaxially laminated from bottom to top in sequence, and the light-emitting epitaxial layer 03 is circular; the insulating protective layer 02 is sequentially sleeved outside the protective layer, the metal layer and the light-emitting epitaxial layer 03 in a stepped manner; the bonding substrate 06 is a conductive silicon substrate with the thickness of 600 μm; the thickness of the light-emitting epitaxial layer 03 is 3.3 μm; the metal layer comprises a protective metal layer 05 and a reflective metal layer 04, wherein the protective metal layer 05 is made of TiW and has the thickness of 1000 nm; the reflecting metal layer 04 is a Ni/Ag alternating metal layer, and the thickness is 500 nm;
as shown in fig. 2, the N electrode 01 includes a ring electrode and a cross electrode at an inner circumference and an electrode cover at an outer circumference; the annular electrode is coaxially and electrically connected with the cross electrode and coaxially attached to the light-emitting epitaxial layer 03, and the electrode cover is electrically connected with the cross electrode and extends along the insulating protective layer 02; the thickness of the N electrode 01 is 4.5 mu m; the inner diameter ratio of the circular electrode to the cross electrode is 1: 2, the line widths of the cross electrode and the round electrode are both 10 micrometers; the material of the insulating protection layer 02 is silicon dioxide, and the thickness is 3.3 μm.
Example 2:
a preparation method of a circular vertical structure LED chip comprises the following steps:
1) preparing an LED epitaxial wafer: sequentially growing a non-doped GaN layer, an n-type GaN layer, a multi-quantum well light-emitting layer and a p-type GaN layer on the surface of the square growth substrate to obtain an LED epitaxial wafer;
2) manufacturing a metal layer: sequentially growing a reflection metal layer 04 and a protection metal layer 05 on the surface of a p-type GaN layer of the LED epitaxial wafer, wherein the side length of the reflection metal layer 04 is smaller than that of the protection metal layer 05; obtaining an LED epitaxial wafer containing a metal layer; bonding the bonding substrate 06 and the protective metal layer 05 of the LED epitaxial wafer for 10-30min under the conditions that the bonding temperature is 200-400 ℃ and the bonding pressure is 2000-6000mBar, and stripping the growth substrate to obtain an LED semi-finished product;
3) manufacturing a circular light-emitting epitaxial layer 03: removing the epitaxial layer outside the circular area of the LED semi-finished product by utilizing the combination of a photoetching process and ICP dry etching to obtain a light-emitting epitaxial layer 03 compounded with a metal layer;
4) preparing an insulating protective layer 02 step: depositing silicon dioxide on the top surface and the side surface of the light-emitting epitaxial layer 03 compounded with the metal layer obtained in step 3) by utilizing PECVD (plasma enhanced chemical vapor deposition) to prepare insulating layers, and removing the insulating layers on the surface of the light-emitting epitaxial layer 03 to prepare an insulating protection layer 02 step;
5) preparation of an N electrode 01: and (4) performing electron beam evaporation on the metal to obtain N electrodes 01 deposited on the side surfaces and the top surfaces of the semi-finished products, performing a photoetching stripping process by taking the circle center of the luminous epitaxial layer 03 as the center, performing stripping operation to obtain cross electrodes and ring electrodes to obtain the N electrodes 01, and manufacturing the LED chip with the circular vertical structure.
Example 3:
a preparation method of a circular vertical structure LED chip comprises the following steps:
1) preparing an LED epitaxial wafer: sequentially growing a non-doped GaN layer, an n-type GaN layer, a multi-quantum well light-emitting layer and a p-type GaN layer on the surface of the square growth substrate to obtain an LED epitaxial wafer;
2) manufacturing a metal layer: sequentially growing a reflection metal layer 04 and a protection metal layer 05 on the surface of a p-type GaN layer of the LED epitaxial wafer, wherein the side lengths of the reflection metal layer 04 and the protection metal layer 05 are equal to each other, so that the LED epitaxial wafer containing the metal layers is obtained; bonding the bonding substrate 06 and the protective metal layer 05 of the LED epitaxial wafer for 10-30min under the conditions that the bonding temperature is 200-400 ℃ and the bonding pressure is 2000-6000mBar, and stripping the growth substrate to obtain an LED semi-finished product;
3) manufacturing a circular light-emitting epitaxial layer 03: removing the epitaxial layer outside the circular area of the LED semi-finished product by utilizing the combination of a photoetching process and ICP dry etching to obtain a light-emitting epitaxial layer 03 compounded with a metal layer;
4) preparing an insulating protective layer 02 step: depositing silicon dioxide on the top surface and the side surface of the light-emitting epitaxial layer 03 compounded with the metal layer obtained in step 3) by utilizing PECVD (plasma enhanced chemical vapor deposition) to prepare insulating layers, and removing the insulating layers on the surface of the light-emitting epitaxial layer 03 to prepare an insulating protection layer 02 step;
5) preparation of an N electrode 01: depositing N electrode 01 metal on the side face and the top face of the semi-finished product obtained in step 4) by utilizing magnetron sputtering, and obtaining a cross electrode and a ring electrode by adopting a photoetching stripping process and taking the circle center of the luminous epitaxial layer 03 as the center through stripping operation to obtain the N electrode 01, thus preparing the LED chip with the circular vertical structure.
The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention cannot be limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are all within the protection scope of the present invention.
Claims (8)
1. A circular LED chip with a vertical structure is characterized by comprising a bonding substrate, a metal layer, a light-emitting epitaxial layer, an N electrode and an insulating protective layer;
the bonding substrate, the metal layer and the light-emitting epitaxial layer are sequentially and coaxially laminated from bottom to top, and the light-emitting epitaxial layer is circular; the insulating protective layer is sequentially sleeved outside the protective layer, the metal layer and the light-emitting epitaxial layer in a stepped manner;
the N electrode comprises a ring electrode and a cross electrode which are positioned on the inner periphery and an electrode cover which is positioned on the outer periphery; the annular electrode is electrically connected with the cross electrode coaxially and is attached to the light-emitting epitaxial layer coaxially, and the electrode cover is electrically connected with the cross electrode and extends along the insulating protective layer.
2. The circular vertical structure LED chip of claim 1, wherein the metal layer comprises a protective metal layer and a reflective metal layer stacked together, wherein the protective metal layer is stacked with the bonding substrate, and the reflective metal layer is stacked with the light emitting epitaxial structure.
3. The circular vertical structure LED chip of claim 2, wherein the side length of the reflective metal layer is less than the side length of the protective metal layer.
4. The circular vertical structure LED chip of claim 2, wherein the protective metal layer is made of TiW, and the reflective metal layer is formed by alternately growing Ag layers and Ni layers.
5. The circular vertical structure LED chip of claim 1, wherein the insulating protective layer extends from the light emitting epitaxial layer sidewall to the top of the light emitting epitaxial layer.
6. The circular vertical structure LED chip of claim 1, wherein the ratio of the inner diameter of the circular ring electrode to the inner diameter of the cross electrode is 0.4-0.6: 1.
7. the circular vertical structure LED chip of claim 1, wherein the bonding substrate is a conductive silicon substrate; the insulating protection layer is made of silicon dioxide, and the N electrode is made of one or a combination of Cr, Al, Ni, Ti, Au and Pt.
8. The circular vertical structure LED chip as claimed in claim 1, wherein the thickness of the metal layer is 200-2000 nm; the thickness of the insulating protection layer is 100-3000 nm; the thickness of the N electrode is 50-5000nm, and the line width is 5-50 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921910433.5U CN210956717U (en) | 2019-11-07 | 2019-11-07 | Circular vertical structure LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921910433.5U CN210956717U (en) | 2019-11-07 | 2019-11-07 | Circular vertical structure LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210956717U true CN210956717U (en) | 2020-07-07 |
Family
ID=71376334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921910433.5U Active CN210956717U (en) | 2019-11-07 | 2019-11-07 | Circular vertical structure LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210956717U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970535A (en) * | 2019-11-07 | 2020-04-07 | 河源市众拓光电科技有限公司 | Circular vertical structure LED chip and preparation method thereof |
-
2019
- 2019-11-07 CN CN201921910433.5U patent/CN210956717U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970535A (en) * | 2019-11-07 | 2020-04-07 | 河源市众拓光电科技有限公司 | Circular vertical structure LED chip and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8334542B2 (en) | Light emitting diode and manufacturing method thereof | |
| KR101040462B1 (en) | Light emitting device and method for fabricating the same | |
| KR101891777B1 (en) | Light emitting device having dielectric reflector and method of manufacturing the same | |
| CN202423369U (en) | Light-emitting diode chip | |
| US8384112B2 (en) | Light emitting chip | |
| US20110084298A1 (en) | Light emitting diode and method for making same | |
| CN102610720B (en) | Light-emitting diode (LED) with omnidirectional reflector and manufacturing method of LED | |
| WO2015101068A1 (en) | Light-emitting diode chip and method for manufacturing same | |
| CN110085620B (en) | Micro-array integrated LED chip and preparation method thereof | |
| US20120235114A1 (en) | Light emitting chip | |
| CN103151447A (en) | Light emitting diode structure with double-sided light emitting characteristic and manufacturing method of light emitting diode structure | |
| WO2022140898A1 (en) | High-voltage flip-chip light-emitting diode chip and preparation method therefor | |
| CN108933187A (en) | A kind of light-emitting surface is the LED chip and preparation method thereof of specific plane geometric figure | |
| CN210956717U (en) | Circular vertical structure LED chip | |
| TWI766821B (en) | Light-emitting device | |
| CN102130245A (en) | Light emitting diode and manufacturing method thereof | |
| TW201407760A (en) | Light-emitting diode array | |
| CN102082216A (en) | Light emitting diode chip and manufacturing method thereof | |
| TWI577049B (en) | Light emitting device | |
| CN102130248A (en) | Light emitting device and manufacturing method thereof | |
| CN110970535A (en) | Circular vertical structure LED chip and preparation method thereof | |
| CN102456783B (en) | Ultraviolet light emitting diode chip with vertical structure and manufacture method thereof | |
| CN100449797C (en) | Method for fabricating tube core of light emitting diode in gallium nitride substrate through technique of reverse filling welding | |
| CN105895758A (en) | Light-emitting diode, light-emitting diode module and manufacturing method thereof | |
| US8247832B2 (en) | Light emitting diode and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |