CN100449797C - Method for fabricating tube core of light emitting diode in gallium nitride substrate through technique of reverse filling welding - Google Patents

Method for fabricating tube core of light emitting diode in gallium nitride substrate through technique of reverse filling welding Download PDF

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Publication number
CN100449797C
CN100449797C CNB2003101205443A CN200310120544A CN100449797C CN 100449797 C CN100449797 C CN 100449797C CN B2003101205443 A CNB2003101205443 A CN B2003101205443A CN 200310120544 A CN200310120544 A CN 200310120544A CN 100449797 C CN100449797 C CN 100449797C
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China
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tube core
gallium nitride
method
contact electrode
supporter
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CNB2003101205443A
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Chinese (zh)
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CN1627544A (en
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杨辉
张书明
王良臣
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中国科学院半导体研究所
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Abstract

The present invention relates to a method for making a light-emitting diode core of a gallium nitride base by using a reverse welding technique, which comprises the following steps that an N type gallium nitride layer of gallium nitride, a light-emitting active region and a P type gallium nitride layer are arranged on an insulating substrate made of sapphire, etc.; a P type ohmic contact electrode is arranged on the P type gallium nitride layer of the diode core; the sapphire substrate is thinned between 70 mum and 150 mum; an insulation isolation layer made from silicon dioxide, or silicon nitride, etc. is deposited on a supporter, and a metal solder layer with the corresponding size of the P type ohmic contact electrode of the diode core is plated by vaporization on the supporter deposited with the insulation isolation layer, such as silicon dioxide, or silicon nitride, etc.; a hole is arranged on the P type ohmic contact electrode of the diode core; a metal layer is plated by vaporization or is electroplated on the back surface of the supporter after being opened, and P type electrode of the diode core is led out; a metal layer is deposited on the side surface at the diode core reversely welded by using a photoetching method, an evaporating method, etc.; finally, a P type ohmic contact electrode with a single diode core supporter is weld on a heat sink to form an integral diode core with a good heat-conducting property.

Description

Face-down bonding technique is made the method for gallium nitride based light emitting diode tube core

Technical field

The invention belongs to technical field of semiconductors, be meant the method for face-down bonding technique making gallium nitride based light emitting diode tube core especially.

Background technology

III-V family gallium nitride (GaN) based compound semiconductor and quantum well structure light-emitting diode (LED) thereof have advantages such as high reliability, high efficiency, long-life, total solidsization, little power consumption, has huge application market in large scale display, the indication of traffic lights information and general light demonstration and indication field, particularly gallium nitrate based purple light or blue light-emitting diode combine with fluorescent material can make white light-emitting diodes, has potential application market at lighting field, be expected to replace present incandescent lamp and fluorescent lamp in the future, become the green illumination light source of 21 century.In order to adapt to following lighting requirement, utilize face-down bonding technique to make GaN LED core, can increase heat conduction, increase operating current, improve luminous intensity, reduce production costs.The method that the general now face-down bonding technique that adopts is made the gallium nitride based light emitting diode tube core is, utilize the contact area of the method formation N type electrode of etching, prepare P type and N type Ohm contact electrode then, then at P type and N type Ohm contact electrode zone preparation indium post, and on supporter the preparation corresponding indium post, the tube core upside-down mounting is soldered on the supporter, at last this tube core is welded on good heat sink of thermal conductivity.This preparation method needs etching N type table top, and area of dissipation is little, has influenced the service behaviour and the life-span of tube core.

Summary of the invention

The purpose of this invention is to provide a kind of face-down bonding technique and make the new method of gallium nitride based light emitting diode tube core, this method can be simplified manufacture craft, increase efficient lighting area and area of dissipation, improve the conduction velocity of heat, tube core can be worked under bigger electric current, improve the performance and the life-span of tube core.

The method that a kind of face-down bonding technique of the present invention is made the gallium nitride based light emitting diode tube core is characterized in that, comprises the steps:

1) on the sapphire insulation substrate, utilizes metallochemistry organic vapor phase deposition method epitaxial growth of gallium nitride n type gallium nitride layer, the light emitting diode construction of luminescent active region and P type gallium nitride layer;

2) on the basis of step 1), the size that design LED core and corresponding tube core are cut apart, on the P of the tube core that designs type gallium nitride layer, prepare P type Ohm contact electrode, and prepare the upside-down mounting brazing metal in top, whole P type Ohm contact electrode zone;

3) Sapphire Substrate is thinned to 70 μ m to the 150 μ m from the back side with abrasive method or ion milling technology with it;

4) utilize the tube core cutting techniques of patterning method or scribing method the tube core on the epitaxial wafer to be divided into singulated dies along the cutting apart of tube core that designs;

5) deposition of silica or insulating silicon nitride separator on supporter, then according to the die-size that designs, with method evaporation and the corresponding metal welding bed of material of tube core P type Ohm contact electrode size on the supporter that deposits silicon dioxide or insulating silicon nitride separator of photoetching and evaporation;

6) utilizing face-down bonding technique will cut apart on the upside-down mounting metal welding bed of material of top, P type Ohm contact electrode zone of good singulated dies and the supporter welds together with the corresponding metal welding bed of material of tube core P type Ohm contact electrode size;

7) in the relevant position of tube core P type Ohm contact electrode, from the back side of supporter with dry etching or wet etching method perforate up to silicon dioxide or insulating silicon nitride separator, remove with the method for chemical corrosion silicon dioxide or insulating silicon nitride separator at last, form P type Ohm contact electrode fairlead the bottom, hole;

8) back side evaporation or the electroplated metal layer of the supporter after perforate, the P type Ohm contact electrode lead surface of formation tube core;

9) utilize the method for photoetching and evaporation to deposit a metal level at the back side that upside-down mounting welds tube core, form the N type Ohm contact electrode of tube core in the side of tube core;

10) according to the die size of design, supporter is divided into the supporter with singulated dies with the method for scribing or cutting;

11) will have at last singulated dies the supporter back side P type Ohm contact electrode lead surface by scolder be welded to heat sink on, form a complete tube core with good heat conductive performance.

Wherein to draw layer metal be in nickel, gold, platinum, chromium, titanium, aluminium, nickel billon, nickel platinum alloy, nichrome, nickel alumin(i)um alloy, indium, indium stannum alloy, gold-tin alloy or the terne metal any one to P type Ohm contact electrode, and its thickness is between the 0.01-100 micron.

The side of N type layer that wherein utilizes the gallium nitride based light emitting diode epitaxial structure is as tube core N type Ohm contact electrode contact area, the metal of N type Ohm contact electrode is any one in titanium, aluminium, chromium, titanium-aluminium alloy, Cr-Al alloy, indium, indium stannum alloy or the gold-tin alloy, and its thickness is between the 0.3-100 micron.

Wherein this method is applicable to the making of the gallium nitride based light emitting diode tube core of arbitrary dimension and arbitrary shape.

Wherein the supporter of tube core flip chip bonding is silicon or beryllium oxide or aluminium nitride or diamond.

Wherein employed heat sink be that tungsten-copper alloy or copper metal material are made.

Description of drawings

In order to further specify technology contents of the present invention, below in conjunction with embodiment and accompanying drawing the present invention is done a detailed description, wherein:

Fig. 1 is the profile of the gallium nitride based light emitting diode tube core structure among the present invention;

Fig. 2 is the profile after tube core upside-down mounting of the present invention is soldered to supporter;

Fig. 3 is the profile that utilizes the tube core of face-down bonding technique making of the present invention.

Embodiment

A kind of method of utilizing face-down bonding technique to prepare the gallium nitride based light emitting diode tube core of the present invention, it is characterized in that, this method is compared with traditional technology, perforate on the tube core supporter of flip chip bonding, GaN base LED P type electrode is drawn from the back side of tube core supporter, the side of N type layer that utilizes the gallium nitride based light emitting diode epitaxial structure is as the contact area of tube core N type Ohm contact electrode, and with the back side of the supporter of this tube core be welded to heat sink on, the method of this making tube core can be saved the etching technics step of the tube core N type contact area in the traditional manufacturing technique technology, it is long-pending to have increased light gasing surface, utilization perforate on the tube core supporter of flip chip bonding, the method of P type electrode being drawn from the back side of tube core supporter, upside-down mounting metal welding charge level on the whole P profile is contacted with scolder face on the supporter, can increase area of dissipation, improve radiating efficiency, compare with the tube core that traditional face-down bonding technique is made, this tube core can be worked under bigger electric current, has improved the performance and the life-span of LED core.

A kind of process of utilizing flip chip technology to prepare the gallium nitride based light emitting diode tube core of the present invention is: the structure of utilizing metallochemistry organic vapor phase deposition method (MOCVD) method epitaxial growth of gallium nitride based light-emitting diode on substrates such as sapphire, with photoetching and steaming degree, the method of sputter is on the P of epitaxial wafer type aspect, according to the die size preparation of design to the reflectivity of light-emitting diode issued light greater than 60% P type Ohm contact electrode and solder metal, with abrasive method or ion milling technology it is thinned to 70 μ m between the 150 μ m, with patterning method or scribing method tube core is separately formed singulated dies along Cutting Road again; On the tube core supporter, use plasma activated chemical vapour deposition (PECVD) or low-pressure chemical vapor deposition (LPCVD) method evaporation layer of silicon dioxide or insulating silicon nitride separator, die size according to design forms on the supporter of silicon dioxide or insulating silicon nitride separator and the corresponding metal welding bed of material of tube core P type contact electrode face with methods such as photoetching and evaporations then, utilizes face-down bonding technique that the singulated dies upside-down mounting is soldered on the supporter; With the relevant position of tube core P electrode, from the back side of supporter with dry etching or wet etching method perforate up to silicon dioxide or insulating silicon nitride separator, then silicon dioxide or insulating silicon nitride separator bottom the hole are removed with the method for chemical corrosion, form P electrode fairlead, the back side evaporated metal layer of the supporter after perforate forms the P type electrode lead surface of tube core, the back side of the tube core that welds in upside-down mounting utilizes photoetching and method of evaporating to deposit a metal level in the side of tube core then, form tube core N type Ohm contact electrode, and supporter is divided into the supporter with singulated dies with the method for scribing or cutting according to the die size of design.To have at last the singulated dies supporter P type electrode lead surface by scolder be welded to heat sink on, form a complete tube core with fine heat conductivility.

At first see also shown in Figure 1ly, this is the profile of a gallium nitride based light emitting diode tube core structure, and its manufacturing process process is to utilize MOCVD method epitaxial growth N type GaN layer 11 on Sapphire Substrate 10, luminescent active region 12 and P type GaN contact layer 13; The shaped design quadrate of tube core, be of a size of 1mm * 1mm, on P type GaN layer 13, utilize the method for evaporation to prepare the argent (Ag) of 0.2 micron thickness according to the tube core figure and the size of design then, and formed P type Ohm contact electrode 14 in 5 minutes at 300 degrees centigrade of alloys, evaporate 0.5 micron upside-down mounting scolder indium metal (In) 15 then thereon, Sapphire Substrate is thinned to 100 μ m from the back side with abrasive method with it, utilizes laserscribing the tube core on the epitaxial wafer to be divided into singulated dies along the cutting apart of tube core that designs.

Please consult shown in Figure 2 again, on supporter silicon substrate 20, utilize the PECVD method to deposit the silicon dioxide insulator separator 21 of 0.5 micron thickness, evaporate 0.5 micron and tube core P type aspect corresponding upside-down mounting scolder indium metal (In) 22 thereon according to the die size of design again, the singulated dies upside-down mounting that utilizes face-down bonding technique to be divided into then is soldered on the tube core supporter.

See also shown in Figure 3 at last, relevant position at tube core P electrode, use the reactive ion etching method perforate up to the silicon dioxide insulator separator from the back side of supporter, and remove with the method for chemical corrosion silicon dioxide insulator separator 21 with the bottom, hole, form P electrode fairlead 30, the gold-tin alloy 31 that the back side of last supporter after perforate forms 5 micron thickness with electro-plating method is drawn the P type electrode of tube core, forms P type electrode lead surface.The back side that welds tube core in upside-down mounting utilizes photoetching and method of evaporating to deposit Titanium/aluminium (0.1 micron/2.9 microns) layer 32 of 3 micron thickness in the side direction of tube core, form tube core N type Ohm contact electrode, the die size according to design is divided into the supporter with singulated dies with supporter with dicing method then.The P type electrode lead surface that will have the supporter of singulated dies at last is welded on the copper heat sink 34 by gold-tin alloy solder layer 33, forms a complete tube core with fine heat conductivility.

The invention provides a kind of new method of utilizing flip chip technology to prepare gallium nitride based light emitting diode, this method can be simplified the manufacture craft of gallium nitride based light emitting diode tube core, increase efficient lighting area and area of dissipation, improve thermal conduction rate, tube core is worked under bigger electric current, improve the performance and the life-span of tube core.

Claims (6)

1, a kind of face-down bonding technique is made the method for gallium nitride based light emitting diode tube core, it is characterized in that, comprises the steps:
1) on the sapphire dielectric substrate, utilizes metallochemistry organic vapor phase deposition method epitaxial growth of gallium nitride n type gallium nitride layer, the light emitting diode construction of luminescent active region and P type gallium nitride layer;
2) on the basis of step 1), the size that design LED core and corresponding tube core are cut apart, on the P of the tube core that designs type gallium nitride layer, prepare P type Ohm contact electrode, and prepare the upside-down mounting brazing metal in top, whole P type Ohm contact electrode zone;
3) Sapphire Substrate is thinned to 70 μ m to the 150 μ m from the back side with abrasive method or ion milling technology with it;
4) the tube core cutting techniques that utilizes patterning method or scribing method is cut apart tube core and is separately formed singulated dies along the tube core that designs;
5) deposition of silica or insulating silicon nitride separator on supporter, then according to the die-size that designs, with method evaporation and the corresponding metal welding bed of material of tube core P type Ohm contact electrode size on the supporter that deposits silicon dioxide or insulating silicon nitride separator of photoetching and evaporation;
6) utilizing face-down bonding technique will cut apart on the upside-down mounting metal welding bed of material of top, P type Ohm contact electrode zone of good singulated dies and the supporter welds together with the corresponding metal welding bed of material of tube core P type Ohm contact electrode size;
7) in the relevant position of tube core P type Ohm contact electrode, from the back side of supporter with dry etching or wet etching method perforate up to silicon dioxide or insulating silicon nitride separator, remove with the method for chemical corrosion silicon dioxide or insulating silicon nitride separator at last, form P type Ohm contact electrode fairlead the bottom, hole;
8) back side evaporation or the electroplated metal layer of the supporter after perforate, the P type Ohm contact electrode lead surface of formation tube core;
9) weld the Sapphire Substrate face of tube core in upside-down mounting, utilize the method for photoetching and evaporation to deposit a metal level, form the N type Ohm contact electrode of tube core in the side of tube core;
10) according to the die size of design, supporter is divided into the supporter with singulated dies with the method for scribing or cutting;
11) will have at last singulated dies the supporter back side P type Ohm contact electrode lead surface by scolder be welded to heat sink on, form a complete tube core.
2, face-down bonding technique according to claim 1 is made the method for gallium nitride based light emitting diode tube core, it is characterized in that, wherein to draw layer metal be in nickel, gold, platinum, chromium, titanium, aluminium, nickel billon, nickel platinum alloy, nichrome, nickel alumin(i)um alloy, indium, indium stannum alloy, gold-tin alloy or the terne metal any one to P type Ohm contact electrode, and its thickness is between the 0.01-100 micron.
3, face-down bonding technique according to claim 1 is made the method for gallium nitride based light emitting diode tube core, it is characterized in that, the side of N type layer that wherein utilizes the gallium nitride based light emitting diode epitaxial structure is as tube core N type Ohm contact electrode contact area, the metal of N type Ohm contact electrode is any one in titanium, aluminium, chromium, titanium-aluminium alloy, Cr-Al alloy, indium, indium stannum alloy or the gold-tin alloy, and its thickness is between the 0.3-100 micron.
4, face-down bonding technique according to claim 1 is made the method for gallium nitride based light emitting diode pipe, it is characterized in that this method is applicable to the making of the gallium nitride based light emitting diode tube core of arbitrary dimension and arbitrary shape.
5, face-down bonding technique according to claim 1 is made the method for gallium nitride based light emitting diode tube core, it is characterized in that wherein the supporter of tube core flip chip bonding is silicon or beryllium oxide or aluminium nitride or diamond.
6, face-down bonding technique according to claim 1 is made the method for gallium nitride based light emitting diode tube core, it is characterized in that, wherein employed heat sink be tungsten-copper alloy or copper work.
CNB2003101205443A 2003-12-12 2003-12-12 Method for fabricating tube core of light emitting diode in gallium nitride substrate through technique of reverse filling welding CN100449797C (en)

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CN100591181C (en) * 2007-08-24 2010-02-17 武汉华灿光电有限公司 Method of manufacturing flip welding LED chip
JP2010219377A (en) * 2009-03-18 2010-09-30 Toshiba Corp Semiconductor light-emitting device and method of manufacturing the same
CN102388473A (en) * 2009-03-24 2012-03-21 金江 Light-emitting diode package
CN102931309B (en) * 2012-11-15 2015-04-01 安徽三安光电有限公司 Inverted LED and manufacturing method thereof

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Publication number Priority date Publication date Assignee Title
JPH11220167A (en) * 1998-02-03 1999-08-10 Matsushita Electron Corp Semiconductor light-emitting device and manufacture thereof
JPH11354848A (en) * 1998-06-10 1999-12-24 Matsushita Electron Corp Semiconductor light emitting device
US20020093023A1 (en) * 1997-06-03 2002-07-18 Camras Michael D. III-Phosphide and III-Arsenide flip chip light-emitting devices
US6593597B2 (en) * 2001-06-05 2003-07-15 South Epitaxy Corporation Group III-V element-based LED having ESD protection capacity
US6614172B2 (en) * 2000-02-02 2003-09-02 Industrial Technology Research Institute High efficiency white light emitting diode

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Publication number Priority date Publication date Assignee Title
US20020093023A1 (en) * 1997-06-03 2002-07-18 Camras Michael D. III-Phosphide and III-Arsenide flip chip light-emitting devices
JPH11220167A (en) * 1998-02-03 1999-08-10 Matsushita Electron Corp Semiconductor light-emitting device and manufacture thereof
JPH11354848A (en) * 1998-06-10 1999-12-24 Matsushita Electron Corp Semiconductor light emitting device
US6614172B2 (en) * 2000-02-02 2003-09-02 Industrial Technology Research Institute High efficiency white light emitting diode
US6593597B2 (en) * 2001-06-05 2003-07-15 South Epitaxy Corporation Group III-V element-based LED having ESD protection capacity

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