CN210894599U - Circuit control structure with junction temperature monitoring and high-temperature reverse bias - Google Patents
Circuit control structure with junction temperature monitoring and high-temperature reverse bias Download PDFInfo
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- CN210894599U CN210894599U CN201921655973.3U CN201921655973U CN210894599U CN 210894599 U CN210894599 U CN 210894599U CN 201921655973 U CN201921655973 U CN 201921655973U CN 210894599 U CN210894599 U CN 210894599U
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Abstract
The utility model discloses a take junction temperature control high temperature reverse biased circuit control structure, include the high temperature reverse biased test circuit as the main part, high temperature reverse biased test circuit including being surveyed diode D1, switch K1, switch K2, resistance R1 and voltage source VR, the both ends of being surveyed diode D1 connect junction temperature control test circuit, junction temperature control test circuit include switch K3, switch K4 and current source Im. The utility model overcomes because do not set up the junction temperature control and lead to the problem of the risk that the device became invalid easily appearing in experimental in traditional diode high temperature reverse bias test. The utility model has the advantages of the data acquisition is convenient, the data calculation is convenient and measurement accuracy is higher.
Description
Technical Field
The utility model relates to a circuit control structure, more specifically say, relate to a take junction temperature control high temperature anti-circuit control structure of inclining to one side.
Background
The performance and lifetime of semiconductor devices are strongly affected by temperature, especially for power devices. The power device is affected by high power in the working process, and can generate a large amount of heat to cause the temperature of the device to rise. The diode generates a large amount of heat during operation, and the heat is mainly generated at the PN junction and is reflected by the rise of the junction temperature of the device, so the junction temperature of the diode is one of the important parameters influencing the performance of the MOSFET. The junction temperature of the diode can be effectively monitored, the over-temperature protection of the diode can be realized, the risk of failure of the device can be reduced, and the like.
SUMMERY OF THE UTILITY MODEL
The utility model discloses an overcome in the traditional diode high temperature reverse bias test because do not set up the problem that junction temperature control leads to the risk that the device became invalid easily appearing in experimental, provide a take junction temperature control high temperature reverse bias's circuit control structure of junction temperature with junction temperature monitoring function now.
The utility model discloses a take junction temperature control high temperature reverse biased circuit control structure, include the high temperature reverse biased test circuit as the main part, high temperature reverse biased test circuit including being surveyed diode D1, switch K1, switch K2, resistance R1 and voltage source VR, the both ends of being surveyed diode D1 connect junction temperature control test circuit, junction temperature control test circuit include switch K3, switch K4 and current source Im.
Preferably, the negative electrode of the diode D1 to be tested is electrically connected to the 2 pin of the switch K1, the 1 pin of the switch K1 is electrically connected to the voltage source VR, the 1 pin of the switch K4 is connected to a voltage of-5V, a voltmeter is connected in parallel between the positive electrode and the negative electrode of the diode D1 to be tested, the positive electrode of the diode D1 to be tested is respectively electrically connected to the 1 pin of the switch K2 and the positive electrode of the current source Im, the 2 pin of the switch K2 is electrically connected to one end of the resistor R1, the other end of the resistor R1 is electrically connected to the 2 pin of the switch K3, the node thereof is grounded, and the 1 pin of the switch K3 is electrically connected to the negative electrode of the current source Im.
During a high-temperature reverse bias test, a user firstly uses a K coefficient tester to measure the K value of the diode D1 to be tested, records the K value, closes K1 and K2, disconnects K3 and K4, adds a reverse voltage test, cuts off a voltage source VR temporarily in the test process, cuts in Im to test the VM value of the diode D1 to be tested, then switches the voltage source VR into 1 pin of a switch K1 to test the VH value of the diode D1 to be tested, and calculates the TJ of the diode D1 to be tested by utilizing TJ = TJ (0) + △ Vf/K, wherein △ Vf = VM-VH.
During junction temperature test: k1 and K2 are disconnected, K3 and K4 are closed, the testing current Im is added to test the thermosensitive voltage of the tested diode D1, and the thermosensitive voltage value is read in real time through a voltmeter, so that the junction temperature of the tested diode D1 can be effectively monitored, the risk of failure of the tested diode D1 is reduced, and the like.
The utility model discloses following beneficial effect has: the data acquisition is convenient, the data calculation is convenient, and the measurement accuracy is higher.
Drawings
Fig. 1 is a schematic diagram of the circuit structure of the present invention.
Detailed Description
The technical solution of the present invention is further specifically described below by way of examples and with reference to the accompanying drawings.
Example (b): the present invention is further explained with reference to fig. 1, and the circuit control structure with junction temperature monitoring and high temperature reverse bias of this embodiment includes a high temperature reverse bias test circuit as a main body, the high temperature reverse bias test circuit includes a tested diode D1, a switch K1, a switch K2, a resistor R1 and a voltage source VR, two ends of the tested diode D1 are connected with the junction temperature monitoring test circuit, and the junction temperature monitoring test circuit includes a switch K3, a switch K4 and a current source Im.
The negative pole of the tested diode D1 is electrically connected with the 2 pin of the switch K1, the 1 pin of the switch K1 is electrically connected with the voltage source VR, the 1 pin of the switch K4 is connected with the voltage of-5V, a voltmeter is connected between the positive pole and the negative pole of the tested diode D1 in parallel, the positive pole of the tested diode D1 is respectively electrically connected with the 1 pin of the switch K2 and the positive pole of the current source Im, the 2 pin of the switch K2 is electrically connected with one end of the resistor R1, the other end of the resistor R1 is electrically connected with the 2 pin of the switch K3 to ground, and the 1 pin of the switch K3 is electrically connected with the negative pole of the current source Im.
The above description is only for the specific embodiment of the present invention, but the structural features of the present invention are not limited thereto, and any person skilled in the art can make changes or modifications within the scope of the present invention.
Claims (2)
1. A circuit control structure with junction temperature monitoring and high-temperature reverse bias comprises a high-temperature reverse bias test circuit as a main body and is characterized in that the high-temperature reverse bias test circuit comprises a tested diode D1, a switch K1, a switch K2, a resistor R1 and a voltage source VR, the two ends of the tested diode D1 are connected with the junction temperature monitoring test circuit, and the junction temperature monitoring test circuit comprises a switch K3, a switch K4 and a current source Im.
2. The circuit control structure with junction temperature monitoring and high temperature reverse bias as claimed in claim 1, wherein a negative electrode of the diode D1 to be tested is electrically connected to a 2-pin of a switch K1, a 1-pin of the switch K1 is electrically connected to a voltage source VR, a 1-pin of the switch K4 is connected to a voltage of-5V, a voltmeter is connected in parallel between a positive electrode and a negative electrode of the diode D1 to be tested, a positive electrode of the diode D1 to be tested is respectively electrically connected to a 1-pin of a switch K2 and a positive electrode of a current source Im, a 2-pin of the switch K2 is electrically connected to one end of a resistor R1, the other end of the resistor R1 is electrically connected to a 2-pin of the switch K3, a node thereof is grounded, and a 1-pin of the switch K3 is electrically connected to a negative electrode of the current source Im.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921655973.3U CN210894599U (en) | 2019-09-30 | 2019-09-30 | Circuit control structure with junction temperature monitoring and high-temperature reverse bias |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921655973.3U CN210894599U (en) | 2019-09-30 | 2019-09-30 | Circuit control structure with junction temperature monitoring and high-temperature reverse bias |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210894599U true CN210894599U (en) | 2020-06-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921655973.3U Active CN210894599U (en) | 2019-09-30 | 2019-09-30 | Circuit control structure with junction temperature monitoring and high-temperature reverse bias |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210894599U (en) |
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2019
- 2019-09-30 CN CN201921655973.3U patent/CN210894599U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: No.16, No.2, Yongtai Road, Renhe street, Yuhang District, Hangzhou City, Zhejiang Province Patentee after: HANGZHOU GAOYU ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 311121 Gaoyu electronics, 3rd floor, 7b, No.6 Longquan Road, Cangqian Industrial Park, Yuhang District, Hangzhou City, Zhejiang Province Patentee before: HANGZHOU GAOYU ELECTRONIC TECHNOLOGY Co.,Ltd. |
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| CP02 | Change in the address of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 311107 No.16, No.2 Yongtai Road, Renhe Street, Yuhang District, Hangzhou, Zhejiang Patentee after: Hangzhou Gaoyu Electronic Technology Co.,Ltd. Address before: 311107 No.16, No.2 Yongtai Road, Renhe Street, Yuhang District, Hangzhou, Zhejiang Patentee before: HANGZHOU GAOYU ELECTRONIC TECHNOLOGY CO.,LTD. |
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| CP01 | Change in the name or title of a patent holder |