CN211653051U - Circuit control structure for monitoring delta Tj large-current power circulation - Google Patents

Abstract

The utility model discloses a control triangle Tj large current power endless circuit control structure, including being surveyed MOS pipe Q1, voltage source VR, current source Im, key switch K1, key switch K2, key switch K3, key switch K4, resistance R1, parasitic diode D1 and voltmeter, key switch K1's one end connects voltage source VR, key switch K1's the other end respectively with being surveyed MOS pipe Q1's 4 pins and key switch K4's one end electric connection, key switch K4's another termination-5V voltage, be surveyed MOS pipe Q1's 1 pin and its nodal connection of one end electric connection of parasitic diode D1 negative pole and voltmeter +5V voltage respectively. The utility model overcomes because do not set up the junction temperature control among the traditional MOSFET intermittent type life-span test and lead to the problem of the risk that the device became invalid easily appearing in experimental. The utility model has the advantages of the long service life of button, have dustproof function, the data acquisition is convenient, the calculation data is convenient and measurement accuracy is higher.

Description

Circuit control structure for monitoring delta Tj large-current power circulation

Technical Field

The utility model relates to a circuit control structure, more specifically say, relate to a control triangle Tj large current power endless circuit control structure.

Background

The performance and lifetime of semiconductor devices are strongly affected by temperature, especially for power devices. The power device is affected by high power in the working process, and can generate a large amount of heat to cause the temperature of the device to rise. During the operation of the MOSFET, a large amount of heat is generated, and the heat is mainly generated at a PN junction and is reflected by the increase of the junction temperature of the device, so the junction temperature of the MOSFET is one of important parameters affecting the performance of the MOSFET. The junction temperature of the MOSFET can be effectively monitored, the over-temperature protection of the MOSFET can be realized, the risk of device failure is reduced, and the like.

SUMMERY OF THE UTILITY MODEL

The utility model discloses an overcome among the traditional MOSFET intermittent type life-span test because do not set up the junction temperature control and lead to the problem of the risk that the device became invalid easily appearing in experimental, provide the MOSFET intermittent type life-span test system's that takes junction temperature control structure who has junction temperature monitoring function now.

The utility model discloses a control structure of circuit of control triangle Tj heavy current power circulation, including being surveyed MOS pipe Q1, voltage source VR, current source Im, key switch K1, key switch K2, key switch K3, key switch K4, resistance R1, parasitic diode D1 and voltmeter, one end of key switch K1 connect voltage source VR, the other end of key switch K1 respectively with being surveyed MOS pipe Q1's 4 pins and key switch K4's one end electric connection, another end of key switch K4 connect-5V voltage, being surveyed MOS pipe Q1's 1 pin respectively with parasitic diode D1 negative pole and voltmeter's one end electric connection its node connect +5V voltage, being surveyed MOS pipe Q1's 2 and 3 pins electric connection, being surveyed MOS pipe Q1's 2 pin respectively with key switch K2's one end, current source Im's positive pole, parasitic diode D1's other end electric connection with the voltmeter, the other end of the key switch K2 is electrically connected with one end of a resistor R1, the other end of the resistor R1 is electrically connected with one end of a key switch K3, the other end of the resistor R1 is grounded, and the negative electrode of the other end of the key switch K3 and the negative electrode of a current source Im are electrically connected.

In the high-temperature reverse bias test: the user needs to use the K-factor tester to measure the K-value of the MOS transistor Q1 under test, and then record the K-value. K1 and K2 are closed, K3 and K4 are opened, and a reverse voltage test is applied. In the test process, a voltage source VR is cut off briefly, a VM value of an MOS tube Q1 to be tested is cut in Im, then the voltage source VR is connected to a pin 1 of a switch K1, a VH value of the MOS tube Q1 to be tested is tested, and the delta Tj of the MOS tube Q1 to be tested is calculated by utilizing the delta Tj = [ delta ] VF/K = (VM-VH)/K.

During junction temperature test: k1 and K2 are disconnected, K3 and K4 are closed, a test current source Im is added to test the thermosensitive voltage of the tested MOS tube Q1, and the thermosensitive voltage value is read in real time through a voltmeter, so that the junction temperature of the tested MOS tube Q1 can be effectively monitored, the risk of failure of the tested MOS tube Q1 is reduced, and the like.

Preferably, key switch K1, key switch K2, key switch K3 and key switch K4 the same structure, key switch K1 include the button as the main part, the button be furnished with outward and press the keyway, the both sides of button bottom be equipped with and be used for blockking the dust-guard plate that the dust in the air got into and press the keyway, the both sides of button groove opening be equipped with the baffle that the cooperation of dust-guard plate was used.

The dustproof plate and the baffle are matched for use, so that dust can be prevented from entering the key when the key is not used, and the service life of the key is prolonged.

Preferably, a return spring for automatically resetting the key is arranged between the bottom of the groove of the key groove and the bottom of the key, the dust guard comprises a support for supporting, and the front end of the support is provided with a rubber gasket for blocking dust.

The rubber gasket can prevent part of dust from entering the key and absorb part of pressure when the key is reset, so that the service life of the key is prolonged. The reset spring can be used for automatically resetting the key after the key is released by hands.

The utility model discloses following beneficial effect has: the service life of the key is long, the dustproof function is achieved, data collection is convenient, data calculation is convenient, and measurement accuracy is high.

Drawings

Fig. 1 is a schematic diagram of the circuit structure of the present invention.

Fig. 2 is a schematic structural diagram of the key switch K1 according to the present invention.

The key comprises a key 1, a key groove 2, a dustproof plate 3, a baffle 4, a reset spring 5, a support 6 and a rubber gasket 7.

Detailed Description

The technical solution of the present invention is further specifically described below by way of examples and with reference to the accompanying drawings.

Example (b): the present invention is further explained with reference to fig. 1 and fig. 2, the circuit control structure for monitoring Δ Tj large current power cycle of this embodiment comprises a tested MOS transistor Q1, a voltage source VR, a current source Im, a key switch K1, a key switch K2, a key switch K3, a key switch K4, a resistor R1, a parasitic diode D1, and a voltmeter, wherein one end of the key switch K1 is connected to the voltage source VR, the other end of the key switch K1 is electrically connected to the 4 pins of the tested MOS transistor Q1 and one end of the key switch K4, the other end of the key switch K4 is connected to a voltage of-5V, the 1 pin of the tested MOS transistor Q1 is electrically connected to the negative electrode of the parasitic diode D1 and one end of the voltmeter at a node of +5V, the 2 and 3 pins of the tested transistor Q1 are electrically connected to the pins 2 of the tested MOS transistor Q1 and one end of the voltmeter at a terminal of the voltmeter 2, The positive pole of current source Im, parasitic diode D1's positive pole and the other end electric connection of voltmeter, key switch K2 the other end and resistance R1 one end electric connection, resistance R1 the other end and key switch K3's one end electric connection, resistance R1's the other end ground connection, key switch K3's the other end current source Im's negative pole electric connection.

Key switch K1, key switch K2, key switch K3 and key switch K4's structure the same, key switch K1 including the button 1 as the main part, button 1 external configuration have according to keyway 2, the both sides of button 1 bottom be equipped with and be arranged in stopping the dust guard 3 that the dust in the air got into according to keyway 2, 2 open-ended both sides of button groove be equipped with the baffle 4 that 3 cooperations of dust guard used.

The utility model discloses a dustproof keyboard, including button groove 2, dust guard 3, support 6, the bottom of button 1 between be equipped with the reset spring 5 that is used for carrying out automatic re-setting with button 1 between the recess bottom in button groove 2 and the bottom of button 1, 6 front ends of support be equipped with rubber gasket 7 that is used for the separation dust.

The above description is only for the specific embodiment of the present invention, but the structural features of the present invention are not limited thereto, and any person skilled in the art can make changes or modifications within the scope of the present invention.

Claims (3)

1. A circuit control structure for monitoring delta Tj large-current power circulation comprises a tested MOS tube Q1, a voltage source VR, a current source Im, a key switch K1, a key switch K2, a key switch K3, a key switch K4, a resistor R1, a parasitic diode D1 and a voltmeter, and is characterized in that one end of the key switch K1 is connected with the voltage source VR, the other end of the key switch K1 is respectively and electrically connected with a 4 pin of the tested MOS tube Q1 and one end of the key switch K4, the other end of the key switch K4 is connected with-5V voltage, a 1 pin of the tested MOS tube Q1 is respectively and electrically connected with the cathode of the parasitic diode D1 and one end of the voltmeter and the node thereof is connected with +5V voltage, 2 and 3 pins of the tested MOS tube Q1 are electrically connected, a 2 pin of the tested MOS tube Q1 is respectively and electrically connected with one end of the key switch K2, the anode of the parasitic diode D4, the anode of the current source and the other end of the voltmeter 1, the other end of the key switch K2 is electrically connected with one end of a resistor R1, the other end of the resistor R1 is electrically connected with one end of a key switch K3, the other end of the resistor R1 is grounded, and the negative electrode of the other end of the key switch K3 and the negative electrode of a current source Im are electrically connected.

2. The circuit control structure for monitoring delta Tj large-current power circulation according to claim 1, wherein the key switch K1, the key switch K2, the key switch K3 and the key switch K4 are of the same structure, the key switch K1 comprises a key (1) serving as a main body, a key pressing groove (2) is arranged outside the key (1), dust-proof plates (3) used for preventing dust in air from entering the key pressing groove (2) are arranged on two sides of the bottom of the key (1), and baffles (4) matched with the dust-proof plates (3) are arranged on two sides of the opening of the key pressing groove (2).

3. The circuit control structure for monitoring Δ Tj large-current power circulation according to claim 2, wherein a return spring (5) for automatically returning the key (1) is disposed between the bottom of the key groove (2) and the bottom of the key (1), the dust-proof plate (3) comprises a support (6) for supporting, and a rubber gasket (7) for blocking dust is disposed at the front end of the support (6).

Images