CN210866183U - Electrically controllable two-dimensional spinning electronic device array - Google Patents
Electrically controllable two-dimensional spinning electronic device array Download PDFInfo
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- CN210866183U CN210866183U CN201920997049.7U CN201920997049U CN210866183U CN 210866183 U CN210866183 U CN 210866183U CN 201920997049 U CN201920997049 U CN 201920997049U CN 210866183 U CN210866183 U CN 210866183U
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Abstract
The utility model discloses an electrically controllable two-dimensional spintronic device array, including the semiconductor substrate, set up in the grating structure's of substrate lower surface back grid electrode, range upon range of setting at the dielectric layer of substrate upper surface, transition metal sulphide two-dimensional material/ferromagnetic metal nanocluster heterostructure, set up in two electrode pairs, the BN two-dimensional material passivation layer of transition metal sulphide two-dimensional material upper surface both sides, two electrode pairs are arranged by arranging in the equidistant constitution of a plurality of electrodes of the one-to-one correspondence of counterpoint position of transition metal sulphide two-dimensional material upper surface both sides; the spintronic device array can perform electrostatic doping on the transition metal sulfide two-dimensional material/ferromagnetic metal nanocluster heterostructure by applying back gate voltage, so that the magnetic anisotropy of the heterostructure and the spin polarization direction of an electronic state near a Fermi level are regulated and controlled, and then spin current with independently controllable polarization direction is generated under the action of voltage between electrode pairs.
Description
Technical Field
The utility model relates to a spin electron device array, especially an electrically controllable two-dimensional spin electron device array.
Background
The spintronics device performs information transmission, processing and storage by the spin of electrons, and has the advantages of non-volatility, high data processing speed, low energy consumption, high integration density and the like compared with the traditional semiconductor device, thereby bringing revolutionary changes to the existing electronic industry. In recent years, the development of semiconductor spintronic devices has received great attention in developed countries in the world, and many international famous scientific research institutes and large research and development departments invest a lot of manpower and material resources, so that the research on the generation, injection, transmission, operation, detection and the like of spin polarization in the semiconductor device structure has made a very important progress. The key problem in implementing the application of the spintronics is that the electric field is used for regulating the spin orientation of the carriers. At present, the generation methods of spin-polarized carriers in semiconductor spintronic devices mainly include the following methods: (1) firstly, circular polarization laser is used for excitation, and carriers with unbalanced spins are excited in a semiconductor without spin polarization originally, however, the room temperature polarizability of the method is lower and the integration of devices is difficult to realize; (2) spin-polarized charge carriers are injected into a semiconductor material from a material (e.g., ferromagnetic metal, magnetic semiconductor, or semimetal), however, it is required that the spin scattering in the device be small, and that the relaxation time be sufficiently long and the mobility be high; (3) the giant Zeeman splitting effect of the diluted magnetic semiconductor under a magnetic field is utilized, but the Curie temperature of the diluted magnetic semiconductor cannot reach above room temperature generally, and the diluted magnetic semiconductor is difficult to realize practical application. Therefore, the current spin electronic device still has the problems of low spin polarizability at room temperature, difficult control, difficult integration, poor compatibility and the like.
SUMMERY OF THE UTILITY MODEL
The utility model provides an electrically controllable two-dimensional spintronic device array based on transition metal sulfide two-dimensional material/ferromagnetic metal nanocluster heterostructure in view of the design demand of spintronic devices; the device has a spin electronic device with electrically adjustable polarizability, and can solve the problems of low room-temperature spin polarizability, difficulty in control, integration, poor compatibility and the like.
In order to solve the technical problem, the utility model provides an electrically controllable two-dimensional spintronic device array, including the semiconductor substrate, set up in the grating structure's of substrate lower surface back gate electrode, range upon range of dielectric layer, transition metal sulphide two-dimensional material/ferromagnetic metal nanocluster heterostructure that sets up at the substrate upper surface, set up in two rows of electrode pairs of transition metal sulphide two-dimensional material upper surface along width direction both sides, set up in the BN two-dimensional material passivation layer of transition metal sulphide two-dimensional material upper surface; the two rows of electrode pairs are formed by arranging a plurality of pairs of electrodes which are arranged on the upper surface of the transition metal sulfide two-dimensional material along the width direction and correspond to each other one by one at equal intervals;
the spin electronic device array performs electrostatic doping on the transition metal sulfide two-dimensional material/ferromagnetic metal nanocluster heterostructure by applying back gate voltage, so that the magnetic anisotropy of the heterostructure and the spin polarization direction of an electronic state near a Fermi level are regulated and controlled, and spin current with independently controllable polarization direction is generated under the action of voltage between electrode pairs.
In a preferred embodiment: the semiconductor substrate is made of one of n-type or p-type doped silicon and germanium, n-type or p-type doped III-V group compound semiconductor and n-type or p-type doped II-VI group compound.
In a preferred embodiment: the dielectric layer is made of one or a combination of more of aluminum oxide, magnesium oxide, hafnium oxide, titanium dioxide and hexagonal boron nitride, and the thickness of the dielectric layer is 50-1000 mu m.
In a preferred embodiment: the chemical formula of the transition metal sulfide two-dimensional material is MX2Wherein M ═ Mo or W, and X ═ S or Se.
In a preferred embodiment: thickness d of the transition metal sulfide two-dimensional material1Satisfies the range of 0<d1<50nm。
In a preferred embodiment: the ferromagnetic metal nanoclusters are one of a nanoparticle-shaped aperiodic cluster structure or a periodic cluster array structure composed of ferromagnetic metal materials.
In a preferred embodiment: the ferromagnetic metal material of the ferromagnetic metal nanocluster is one or more of iron, cobalt and nickel, or an alloy thereof.
In a preferred embodiment: the particle size and the particle spacing of the nanoparticle aperiodic cluster structure formed by the ferromagnetic metal material and the particle size and the particle spacing of the periodic cluster array structure are all within the range of 1-500 nm.
In a preferred embodiment: thickness d of the passivation layer of the BN two-dimensional material2Satisfies the range of 0<d2<1μm。
In a preferred embodiment: the grating period of the back gate electrode of the grating structure is consistent with the arrangement period of two rows of electrode pairs arranged on two sides of the upper surface of the transition metal sulfide two-dimensional material, and the positions of the back gate electrode correspond to the upper position and the lower position of the electrode pairs one by one.
The principle of the utility model is that: spin-up and spin-down electronic states with energy alternately arranged exist near the Fermi level of the transition metal sulfide two-dimensional material/ferromagnetic metal nanocluster heterostructure; the device is applied with back gate voltage, the transition metal sulfide two-dimensional material/ferromagnetic metal nanocluster heterostructure can be subjected to electrostatic doping, the size and direction of the back gate voltage are adjusted to change the number and the type of doping carriers, the spin orientation of an electronic state at the Fermi energy level of the transition metal sulfide two-dimensional material/ferromagnetic metal nanocluster heterostructure can be regulated, and therefore spin polarized current can be formed under the driving of voltage between electrode pairs on two sides of the upper surface of the transition metal sulfide two-dimensional material, and the spin orientation of the transition metal sulfide two-dimensional material/ferromagnetic metal nanocluster heterostructure can be regulated and controlled through the back gate voltage. In addition, the transition metal sulfide two-dimensional material/ferromagnetic metal nanocluster heterostructure respectively presents perpendicular magnetic anisotropy and parallel magnetic anisotropy under the action of electron and hole doping, so that a stable magnetic domain and a consistent magnetic moment direction can be formed in the heterostructure through regulating and controlling the magnetic anisotropy by back gate voltage, so that spin scattering is reduced, and the polarizability of spin current is improved.
Compared with the prior art, the utility model discloses the beneficial effect who produces is: the utility model discloses owing to adopt the back gate electrode of grating structure, but every back gate electrode unit independent control to with the electrode pair one-to-one of upper surface, consequently can carry out subregion and patterned regulation and control scheme in device array structure, thereby realize more manifold device function, and the device is applicable to 0K and is less than or equal to T and is less than or equal to 320K temperature range, in air circumstance or the vacuum environment, adopts full electronics regulation and control mode, solves room temperature spin polarization and regulation and control and device integration and compatible scheduling problem.
Drawings
FIG. 1 is a schematic diagram of an electrically controllable two-dimensional spintronic device array.
FIG. 2 band diagram of transition metal sulfide two-dimensional material/ferromagnetic metal nanocluster heterostructure.
Detailed Description
The present invention will be described in detail with reference to the following embodiments and drawings, but the scope of the present invention is not limited to the following embodiments:
the structure of the embodiment is shown in fig. 1, and the structure of the embodiment includes a semiconductor substrate 1, a back gate electrode 2 of a grating structure arranged on the lower surface of the substrate 1, a dielectric layer 3 stacked on the upper surface of the substrate 1, a transition metal sulfide two-dimensional material/ferromagnetic metal nanocluster heterostructure 4, two rows of electrode pairs 5 arranged on two sides of the upper surface of the transition metal sulfide two-dimensional material 4 along the width direction, and a BN two-dimensional material passivation layer 6 arranged on the upper surface of the transition metal sulfide two-dimensional material 4, wherein the two rows of electrode pairs 5 are formed by arranging a plurality of electrode pairs 5 which are arranged on two sides of the upper surface of the transition metal sulfide two-;
the spintronic device array can perform electrostatic doping on the transition metal sulfide two-dimensional material 4/ferromagnetic metal nanocluster heterostructure 4 by applying back gate voltage, so that the magnetic anisotropy of the heterostructure and the spin polarization direction of an electronic state near a Fermi level are regulated and controlled, and then spin current with independently controllable polarization direction is generated under the action of voltage between electrode pairs.
The semiconductor substrate 1 is a p-type doped Si sheet, the back gate electrode 2 of the grating structure is a Ti/Au (10/60nm) electrode, the period of the grating structure is 10 mu m, and the duty ratio is 7: 3, the dielectric layer 3 adopts Al with the thickness of 300nm2O3The transition metal sulfide two-dimensional material 4 adopts a monomolecular layer WS2The thickness of the two-dimensional material is 0.8nm, and the ferromagnetic metal nanocluster adopts a granular aperiodic cluster structure formed by Co metal; the lateral dimension of the cluster is about 10nm, the longitudinal height of the cluster is about 5nm, the appearances of the clusters are consistent, the passivation layer 6 made of the BN two-dimensional material is 5 molecular layers thick, the two columns of electrode pairs 5 are Ni/Au (10/60nm) electrodes, the arrangement period of the electrodes is 10 mu m, and the upper and lower positions of the electrodes correspond to the positions of the back gate electrodes 2 one by one.
The manufacturing method of the utility model is as follows:
firstly, obtaining a clean p-type doped Si substrate 1 by chemical cleaning (ultrasonic cleaning by using acetone, ethanol and deionized water);
second, growing Al with a thickness of 300nm on the upper surface of the Si substrate 1 by using an Atomic Layer Deposition (ALD) method2O3The film is used as a dielectric layer 3;
thirdly, Chemical Vapor Deposition (CVD) is adopted to deposit Al2O3Epitaxially growing a fully-covered monolayer WS on a thin film2A two-dimensional material; high purity, S powder and WO are adopted in the growth process3The powder is used as a solid growth source; WO3The powder is evenly spread in a quartz boat, and Al grows2O3The base surface of the film facing the adjacent WO3Powder, heating and evaporating high-purity S powder, and carrying the high-purity S powder to the surface of the substrate through inert gas to participate in reaction; growth is carried out in an Ar gas atmosphere at normal pressure, WO3The powder heating temperature is 700-1000 ℃, the S powder heating temperature is 150-350 ℃, and the growth time is 60-120 min;
fourthly, preparing a Ti/Au electrode with a grating structure on the lower surface of the substrate 1 by adopting a mask photoetching process and combining a thermal evaporation technology, and controlling the deposition thickness of Ti/Au to be 10/60 nm;
fifthly, two rows of Ni/Au electrode pairs are prepared on two sides of the upper surface of the substrate 1 by adopting a mask photoetching process and combining a thermal evaporation technology, the number of electrode pairs is consistent with the number of grating lines of the Ti/Au electrode with the grating structure on the lower surface, the positions of the electrode pairs are in one-to-one correspondence, and the deposition thickness of Ni/Au is controlled to be 10/60 nm;
sixthly, preparing the Co metal nanocluster by adopting a thermal evaporation method:
1) placing a substrate 1 on a magnetic rod of a preparation cavity, placing a direct current heating filament in the cavity, and mounting a Co metal source on the filament;
2) firstly, the air pressure in the cavity is pumped to be lower than 10 by a mechanical pump-3torr, then pumping the air pressure to 10 with a molecular pump-8Below the torr, heating the Co metal source to about 1200 ℃ by a direct current heating filament, after 30-scale weighing, stabilizing the temperature of the Co metal source, and pushing the substrate 1 to a position about 10cm in front of the Co metal source by using a magnetic rod;
3) respectively controlling the deposition time to be 40s, pushing the substrate 1 to be far away from an evaporation source by using a magnetic rod, simultaneously closing a direct current heating power supply, basically cooling the cavity after 30min, introducing argon into the cavity to atmospheric pressure, taking out the substrate 1, and immediately placing the substrate 1 in a nitrogen environment for protection to prevent oxidation;
seventhly, preparing a BN two-dimensional material passivation layer 6 by adopting a transfer technology;
1) taking a small piece of monolayer BN two-dimensional material growing on a copper foil, and spin-coating a layer of PMMA on the surface of the monolayer BN two-dimensional material; after PMMA is cured, the resin is washed with (NH4)2S2O8Dissolving the copper foil by the solution (1 mol/L);
2) transferring PMMA with BN two-dimensional material to the surface of a substrate 1, after the residual liquid is dried, placing the substrate 1 on a heating table, and heating at 120 ℃ for 1 hour to enable the BN two-dimensional material to be in closer contact with the substrate 1;
3) soaking the substrate 1 transferred with the BN two-dimensional material in acetone for several hours to completely dissolve PMMA;
4) repeating the steps 2-4, and transferring 5 molecular layers of BN two-dimensional materials to form a passivation layer so as to improve the stability and the oxidation resistance of the device;
and eighthly, welding leads between each pair of electrode pairs and between the upper surface electrode and the lower surface back gate electrode 2 one by one respectively to form the electrically controllable two-dimensional spin electronic device array.
The above description is only a preferred example of the present invention and is not intended to limit the present invention, and all other modifications, substitutions and improvements made within the similar principles, spirit and principles of the present invention should be included within the scope of the present invention, and all the contents not described in detail in the present invention are the conventional technical contents.
Claims (10)
1. An electrically controllable two-dimensional spintronic device array, characterized in that: the semiconductor substrate, a back gate electrode of a grating structure arranged on the lower surface of the substrate, a dielectric layer arranged on the upper surface of the substrate in a laminating way, a transition metal sulfide two-dimensional material/ferromagnetic metal nanocluster heterostructure, two rows of electrode pairs arranged on the two sides of the upper surface of the transition metal sulfide two-dimensional material along the width direction, and a BN two-dimensional material passivation layer arranged on the upper surface of the transition metal sulfide two-dimensional material; the two rows of electrode pairs are formed by arranging a plurality of pairs of electrodes which are arranged on the upper surface of the transition metal sulfide two-dimensional material along the width direction and correspond to each other one by one at equal intervals.
2. An electrically controllable two-dimensional spintronic device array according to claim 1, wherein: the semiconductor substrate is made of one of n-type or p-type doped silicon and germanium, n-type or p-type doped III-V group compound semiconductor and n-type or p-type doped II-VI group compound.
3. An electrically controllable two-dimensional spintronic device array according to claim 1, wherein: the dielectric layer is made of one or a combination of more of aluminum oxide, magnesium oxide, hafnium oxide, titanium dioxide and hexagonal boron nitride, and the thickness of the dielectric layer is 50-1000 mu m.
4. An electrically controllable two-dimensional spintronic device array according to claim 1, wherein: the transitionThe chemical formula of the metal sulfide two-dimensional material is MX2Wherein M ═ Mo or W, and X ═ S or Se.
5. An electrically controllable two-dimensional spintronic device array according to claim 1, wherein: thickness d of the transition metal sulfide two-dimensional material1Satisfies the range of 0<d1<50nm。
6. An electrically controllable two-dimensional spintronic device array according to claim 1, wherein: the ferromagnetic metal nanoclusters are one of a nanoparticle-shaped aperiodic cluster structure or a periodic cluster array structure composed of ferromagnetic metal materials.
7. An electrically controllable two-dimensional spintronic device array according to claim 6, wherein: the ferromagnetic metal material of the ferromagnetic metal nanocluster is one or more of iron, cobalt and nickel, or an alloy thereof.
8. An electrically controllable two-dimensional spintronic device array according to claim 6, wherein: the particle size and the particle spacing of the nanoparticle aperiodic cluster structure formed by the ferromagnetic metal material and the particle size and the particle spacing of the periodic cluster array structure are all within the range of 1-500 nm.
9. An electrically controllable two-dimensional spintronic device array according to claim 1, wherein: thickness d of the passivation layer of the BN two-dimensional material2Satisfies the range of 0<d2<1μm。
10. An electrically controllable two-dimensional spintronic device array according to claim 1, wherein: the grating period of the back gate electrode of the grating structure is consistent with the arrangement period of two rows of electrode pairs arranged on two sides of the upper surface of the transition metal sulfide two-dimensional material, and the positions of the back gate electrode correspond to the upper position and the lower position of the electrode pairs one by one.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN118156143A (en) * | 2024-05-09 | 2024-06-07 | 广东大湾区空天信息研究院 | Method for regulating and controlling spin-orbit coupling of transition metal sulfide by electric field |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN118156143A (en) * | 2024-05-09 | 2024-06-07 | 广东大湾区空天信息研究院 | Method for regulating and controlling spin-orbit coupling of transition metal sulfide by electric field |
| CN118156143B (en) * | 2024-05-09 | 2024-07-19 | 广东大湾区空天信息研究院 | Method for regulating and controlling spin-orbit coupling of transition metal sulfide by electric field |
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