CN105762197A - Lead magnesium niobate and lead titanate monocrystalline-based semiconductor ferroelectric field effect heterostructure, manufacture method therefor and application thereof - Google Patents
Lead magnesium niobate and lead titanate monocrystalline-based semiconductor ferroelectric field effect heterostructure, manufacture method therefor and application thereof Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 230000005669 field effect Effects 0.000 title claims abstract description 62
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 title abstract 3
- 239000010408 film Substances 0.000 claims abstract description 75
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 26
- 238000002360 preparation method Methods 0.000 claims abstract description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims abstract description 7
- 230000005621 ferroelectricity Effects 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 25
- 230000008021 deposition Effects 0.000 claims description 23
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 238000004549 pulsed laser deposition Methods 0.000 claims description 7
- 238000004062 sedimentation Methods 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- 238000011065 in-situ storage Methods 0.000 claims description 5
- 229910020231 Pb(Mg1/3Nb2/3)O3-xPbTiO3 Inorganic materials 0.000 claims description 3
- 229910020226 Pb(Mg1/3Nb2/3)O3−xPbTiO3 Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001428 transition metal ion Inorganic materials 0.000 abstract description 5
- 230000010287 polarization Effects 0.000 description 20
- 230000005684 electric field Effects 0.000 description 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- 230000033228 biological regulation Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 230000005611 electricity Effects 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000005307 ferromagnetism Effects 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910019653 Mg1/3Nb2/3 Inorganic materials 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 3
- 230000008034 disappearance Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910002244 LaAlO3 Inorganic materials 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 244000131316 Panax pseudoginseng Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical group 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention relates to a lead magnesium niobate and lead titanate monocrystalline-based semiconductor ferroelectric field effect heterostructure, a manufacture method therefor and application thereof. The semiconductor ferroelectric field effect heterostructure comprises a substrate made up by a lead magnesium niobate and lead titanate monocrystalline and a channel made up by a titanium dioxide semiconductor thin film formed on the substrate. The general chemical formula of the titanium dioxide semiconductor thin film is TiO2-delta, wherein 0<=delta<=0.2 and preferably 0<=delta<=0.1. According to the semiconductor ferroelectric field effect heterostructure, the pure phase titanium dioxide thin film TiO2-delta having oxygen vacancy is used as the channel. Compared with an oxide semiconductor thin film doped with transition metal ions, the pure phase titanium dioxide thin film is advantaged in that preparation processes and conditions are effectively simplified, unfavorable factors such as film component non-uniformity and the like, and cost of further application of the ferroelectric field effect heterostructure can be lowered.
Description
Technical field
The present invention relates to one and include that lead magnesio-niobate lead titanates (being called for short PMN-PT) ferro-electricity single crystal substrate is as grid and N-shaped
Semiconductor titanium deoxid film is as the semiconductor ferroelectric field effect heterojunction structure and its preparation method and application of raceway groove.
Background technology
Titanium dioxide semiconductor has the performances such as physics, chemistry, optics and the machinery of excellence, the most international research
Focus, and be widely used in gas sensitive device, solar cell, electronic device and magnetoelectric composite structure.Generally, dioxy
Change titanium and there are three kinds of crystal structures: rutile, anatase and brockite, be wherein widely used with anatase structured.As allusion quotation
The wide bandgap semiconductor of type, block titanium dioxide resistance is big, in insulation state, thus limits its application in terms of electricity.
2006, Nguyen Hoa Hong et al. delivered entitled " Room-Temperature on Phys.Rev.B magazine
Ferromagnetism observed in undoped semiconducting and insulating oxide thin films " article
(Phys.Rev.B 2006,73,132404), they are by TiO2-δThin film deposition is at (100) LaAlO3Etc. in single crystalline substrate,
Achieve TiO2-δThe room-temperature ferromagnetic of film and electric conductivity, this ferromagnetism and electric conductivity are considered to there is Lacking oxygen in film
Closely related etc. defect.When deposition under titanium deoxid film is at low oxygen pressure, the disappearance (i.e. Lacking oxygen) of oxygen atom can be contributed
Transportable electronics, becomes the carrier of film, thus the electric conductivity of enhanced film.Therefore, it can by changing film load
Flow sub-concentration and obtain different resistance states.
Electric field has the advantages that speed is fast, low in energy consumption, at memory device to the regulation and control reversible, non-volatile of material electric property
In have broad application prospects, attracted increasing concern.At " sull/ferro-electricity single crystal substrate " hetero-junctions
Structure realizes electric field the above-mentioned regulation and control of electric property are mainly had following two mechanism: lattice strain effect and ferroelectric field effect.Its
In, lattice strain effect refer to ferro-electricity single crystal substrate under DC Electric Field iron electric polarization upset induction or due to ferro-electricity single crystal
The strain of inverse piezoelectric effect induction pass in situ film in interface, and then the lattice strain of regulation film affecting further
The process of its electronic transport.But, the strain that polarization upset or inverse piezoelectric effect produce often disappears along with the disappearance of extra electric field
Lose or there is irreversibility, thus the impact of Electrical performance is had by the applied bias electric field caused by lattice strain effect
Volatibility or irreversibility [R.K.Zheng et al, Phys.Rev.B 2007,75,212102]；Furthermore, some special is taken
To ferro-electricity single crystal, even if electric field can induce nonvolatile lattice strain in ferro-electricity single crystal, but the crystalline substance of this induction
Lattice strain is generally in metastable state (metastable), is difficult to be control effectively [M.Liu et al, Sci.Reps. by electric field
2013,3,1876], the non-volatile tune of Electrical performance that this metastable lattice strain obtains is utilized the most in the world
Control amplitude peak at room temperature is only 12%[B.W.Zhi et al., ACS Appl.Mater.Interf.2014,6,4603], no
It is beneficial to reality application.On the other hand, ferroelectric field effect film and ferro-electricity single crystal substrate are respectively as conducting channel and insulated gate electrode
Owing to after removing extra electric field, the residual polarization of respective direction can retain, this for by electric field non-volatile, reversibly adjust
The performance of control film provides scientific basis.Ferro-electricity single crystal substrate positively and negatively polarizes and can induce negative electricity respectively at single-crystal surface
Lotus and positive charge, cause the carrier (i.e. electronics) of n-type semiconductor film occur accumulation in interface and dissipate, thus induce
Go out carrier accumulation or dissipation layer, it is achieved " insulation " or " conducting " two states of channel resistance, be expected to be applied to non-volatile
Property, low power consumption memories part and electric-controlled switch.
Substantial amounts of research shows, grows the heterojunction structure that perovskite oxide film is constituted in PMN-PT single crystalline substrate
Interface coupling mechanism be mainly lattice strain effect.Ferroelectric field effect is then higher by (10 due to film carrier concentration21-
1022/cm3), thus accumulation/dissipation that PMN-PT iron electric polarization causes film carrier is negligible.On the contrary, work as
When the film carrier concentration that is deposited on ferro-electricity single crystal substrate is relatively low (1018-1020/cm3), " film/ferroelectricity list constituted
Brilliant " significant ferroelectric field effect will be shown under heterojunction structure Electric Field Biased outside.Previously reported ferroelectric field effect hetero-junctions
Structure is mainly the oxide lanthanon magnetic semiconductor thin film deposition of doped transition metal ions at pzt thin film or ferro-electricity single crystal substrate
On.But, easily there is component segregation in the oxide semiconductor thin-film of doped transition metal ions, produces transition metal atoms rich
Collection (the ZnO:Co film such as cobalt element doping can produce metallic cobalt atom cluster in the film) or formation transition metal oxide
(such as Co2O3) etc. dephasign, cause film performance to deteriorate.Additionally, the oxide lanthanon magnetic semiconductor of doped transition metal ions is deposited
Complicated at target preparation procedure, metal ion is skewness in target, and metal ion valence state is difficult to control to, thin film deposition bar
The unfavorable conditions such as part is harsh.
Summary of the invention
For the problems referred to above, it is desirable to provide a kind of ferroelectricity field effect that can be carried out regulation and control non-volatile, reversible by electric field
Answer heterojunction structure.It is a further object of the invention to provide one and prepare semiconductor ferroelectric field effect hetero-junctions of the present invention
The method of structure.A further object of the present invention is, it is provided that one comprises semiconductor ferroelectric field effect heterojunction structure of the present invention
Semiconductor device.It is still another object of the present invention to provide a kind of described semiconductor ferroelectric field effect and manufacture field-effect
Application in heterostructure devices.
In order to achieve the above object, the invention provides a kind of semiconductor ferroelectricity field based on lead magnesio-niobate lead titanate monocrystal effect
Answer heterojunction structure, described semiconductor ferroelectric field effect heterojunction structure include using lead magnesio-niobate lead titanates ferro-electricity single crystal as substrate and with
The titanium dioxide semiconductor film being formed on described substrate is as raceway groove (channel), the change of described titanium dioxide semiconductor film
Formula is TiO2-δ, wherein 0≤δ≤0.2, preferably 0≤δ≤0.1.
Ferro-electricity single crystal PMN-PT has excellent ferroelectric properties, and applied bias electric field can induce it to produce iron electric polarization, and
Can be by design preparation technology so that titanium deoxid film is at PMN-PT single crystalline substrate Epitaxial growth.Based on ferroelectricity field
Effect non-volatile, it is possible to obtain the novel ferroelectric field-effect heterostructure of excellent performance.Applied bias electric field is at PMN-PT
The polarization phenomena caused in single crystalline substrate can cause the accumulation at interface of the titanium deoxid film carrier or dissipation, thus significantly changes
The electronic transport performance of titanium deoxid film.The present invention be given with PMN-PT single crystalline substrate as grid, titanium dioxide semiconductor
Film is the semiconductor ferroelectric field effect heterojunction structure of raceway groove, it is achieved that reversible, non-volatile to channel resistance of applied bias electric field
Regulation and control, and obtain "ON" and two kinds of Resistance states of "Off" of channel resistance by applying impulse electric field, show brand-new and
Excellent ferroelectric field effect feature.
It is preferred that described semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal also includes electrode,
Described electrode lays respectively at side and the titanium dioxide semiconductor film side of lead magnesio-niobate lead titanate monocrystal substrate.
Also, it is preferred that described electrode is argent or gold.
It is preferred that the chemical formula of described lead magnesio-niobate lead titanate monocrystal is (1-x) Pb (Mg1/3Nb2/3)O3-
xPbTiO3, wherein, 0.28≤x≤0.35.
It is preferred that described lead magnesio-niobate lead titanate monocrystal be oriented to (001), (110) or (111), be preferably
(001)。
It is preferred that described lead magnesio-niobate lead titanates ferro-electricity single crystal substrate thickness is 0.05-1mm, described titanium dioxide semiconductor
The thickness of film is 10-500nm.
The invention provides the system of a kind of semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal substrate
Preparation Method, with highly purified TiO2Ceramic block is target, uses pulsed laser deposition technique at lead magnesio-niobate lead titanate monocrystal
Upper deposition of titanium oxide semiconductive thin film.
It is preferred that the technological parameter of described pulsed laser deposition technique includes: first impulse laser deposition system cavity is taken out very
Empty to < 5 × 10-4Pa, heating single crystalline substrate is to 400-600 DEG C as depositing temperature, and deposition oxygen pressure is 0.01-15Pa, passes through
Controlling sedimentation time and realize controlling the thickness of film, common sedimentation time is 10-60 minute, and laser energy density is 1-5J/
Square centimeter, laser frequency is 1-5Hz, and the distance between single crystalline substrate and target is 4-7 centimetre.
It is preferred that oxygen purity >=99.999% used during described deposition film, the heating rate of heating substrate is 1-10 DEG C
/ minute, after deposition terminates, described titanium dioxide semiconductor film is cooled to room temperature in situ, and rate of temperature fall is 1-10 DEG C/min.
The invention provides a kind of field comprising semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal
Means for influencing.
Present invention also offers a kind of semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal manufacturing
Application in field effect device.
Beneficial effects of the present invention:
The present invention be prepared for a kind of with PMN-PT ferro-electricity single crystal as substrate, the titanium dioxide semiconductor film ferroelectric field effect as raceway groove
Heterojunction structure.Utilize the carrier concentration in the surface charge original position of ferro-electricity single crystal polarization generation, dynamic regulation film, it is achieved that
The substrate polarization upset regulation and control reversible, non-volatile to film resistor, it is thus achieved that the new function ferroelectricity field that significantly can be regulated and controled by electric field
Effect heterojunction structure, this ferroelectric field effect heterojunction structure shows excellent ferroelectric field effect feature.Meanwhile, the present invention is with tool
There is the pure phase titanic oxide film TiO of oxygen defect2-δFor raceway groove, compared to the oxide semiconductor thin-film of doped transition metal ions
Effectively simplify preparation process and preparation condition, avoid the unfavorable factors such as thin film composition is uneven, for ferroelectric field effect simultaneously
Cost has been saved in the application further of heterojunction structure.
Accompanying drawing explanation
Fig. 1 is the TiO of preparation in the embodiment of the present invention2-δ/0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3(hereinafter referred to as
For PMN-29PT) semiconductor ferroelectric field effect heterojunction structure schematic diagram；
Fig. 2 is the TiO of preparation in the embodiment of the present invention2-δThe structural characterization knot of/PMN-29PT semiconductor ferroelectric field effect heterojunction structure
Really；
Fig. 3 is the TiO of preparation in the embodiment of the present invention2-δ/ PMN-29PT semiconductor ferroelectric field effect heterojunction structure is in single crystalline substrate respectively
Being in resistance v. temperature (R-T) curve map during positive and negative polarization state, wherein, illustration is that under above two polarization state, film carries
Flow sub-concentration variation with temperature curve；
Fig. 4 is the TiO of preparation in the embodiment of the present invention2-δ/ PMN-29PT semiconductor ferroelectric field effect heterojunction structure is at Electro-pulsing Field
Under relative changing value-time (Δ R/R-T) curve map of resistance.
Detailed description of the invention
The present invention is further illustrated, it should be appreciated that accompanying drawing and following embodiment are only below in conjunction with accompanying drawing and following embodiment
For the present invention is described, and the unrestricted present invention.
The semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal that the present invention provides includes with magnoniobate
Lead lead-titanate ferro-electricity single crystal as substrate (grid), using the titanium dioxide semiconductor film that is formed on described substrate as
Raceway groove (conducting channel) and respectively by evaporation in the way of or other modes be distributed in lead magnesio-niobate lead titanate monocrystal substrate side and
The gold electrode of titanium dioxide semiconductor film side (or silver electrode or other electrodes).Wherein, described lead magnesio-niobate lead titanates
Ferro-electricity single crystal substrate thickness can be 0.05-1mm.Seeing Fig. 1 is the TiO of preparation in the embodiment of the present invention2-δ/0.71Pb
(Mg1/3Nb2/3)O3-0.29PbTiO3(hereinafter referred to as PMN-29PT) semiconductor ferroelectric field effect heterojunction structure is illustrated
Figure.With PMN-PT as grid shown in Fig. 1, TiO2-δFilm is raceway groove.PMN-29PT back side gold evaporation electrode, connects grid
Lead-in wire；TiO2-δFilm vapor deposition gold electrode, connects source electrode, drain lead respectively.Arrow therein represents polarised direction, fixed here
Justice polarised direction points to TiO2-δFilm is positive polarization, and pointing to PMN-PT back electrode is negative polarization.
The chemical formula of above-mentioned lead magnesio-niobate lead titanate monocrystal can be (1-x) Pb (Mg1/3Nb2/3)O3-xPbTiO3, wherein,
0.28≤x≤0.35, the orientation of wherein said lead magnesio-niobate lead titanate monocrystal can be (001), (110) or (111), is preferably
(001).Under identical preparation condition, thin film crystallization performance and the extension performance of the crystal growth that use (001) is orientated are optimal.
The chemical general formula of above-mentioned titanium dioxide semiconductor film is TiO2-δ, wherein 0≤δ≤0.2, preferably 0≤δ≤
0.1.Titanium dioxide is as the typical semiconductor material with wide forbidden band of one, and block is in insulation state, but growth under anaerobic environment
TiO2-δCan there is certain density Lacking oxygen in (0≤δ≤0.1) film, cause its carrier concentration to be in 1018-1020/cm3Model
Enclose, and Ti4+Ion can obtain an electronics and appraise at the current rate as Ti3+Ion and there is ferromagnetism.Thus corresponding TiO2-δ/PMN-
PT heterojunction structure can show significant ferroelectric field effect, and TiO2-δFilm has ferromagnetism.Our great many of experiments table
Bright, carrier concentration at PMN-PT ferro-electricity single crystal Grown titanium dioxide semiconductor film be about 1-8 ×
1018/cm3, constructed TiO2-δThe interface coupling mechanism of/PMN-PT heterojunction structure is mainly ferroelectric field effect.Wherein, institute
The thickness stating titanium dioxide semiconductor film can be 10-500nm.
According to the present invention, direct growth titanium dioxide semiconductor film on lead magnesio-niobate lead titanates ferro-electricity single crystal substrate, no
Only simplify preparation technology, and obtain good interface quality and higher operating efficiency.Due to lead magnesio-niobate metatitanic acid galvanized iron
Electricity monocrystalline has the ferroelectric properties of excellence, and the iron electric polarization of bias field induction makes ferro-electricity single crystal surface produce plus or minus electric charge,
Thus induce the carrier concentration of titanium deoxid film to occur changing, so that the channel resistance of film significantly changes, enter
And obtain the new function ferroelectric field effect heterojunction structure with notable electric field-tunable joint characteristic.Following exemplary ground illustrates this
The preparation method of the semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal of bright offer.
The present invention is with TiO2Ceramic block is target, uses pulsed laser deposition technique at lead magnesio-niobate lead titanate monocrystal substrate
On deposit, obtain TiO2-δSemiconductive thin film.Wherein, film TiO2-δThe disappearance of middle oxygen derives from relatively low deposition oxygen
Pressure, therefore can regulate described TiO by controlling deposition oxygen pressure2-δThe oxygen vacancy concentration of semiconductive thin film, changes its carrier concentration
And electric conductivity.
The technological parameter of above-mentioned pulsed laser deposition technique includes but are not limited to: first taken out by impulse laser deposition system cavity
Vacuum is to ＜ 5 × 10-4Pa, heating single crystalline substrate is to 400-600 DEG C as depositing temperature, and deposition oxygen pressure is 0.01-15Pa, logical
Crossing the thickness controlling sedimentation time realization control film, common sedimentation time is 10-60 minute, and laser energy density is 1-5
J/ square centimeter, laser frequency is 1-5Hz, and the distance between single crystalline substrate and target is 4-7 centimetre.
Wherein, oxygen purity >=99.999% used during deposition film, the heating rate of heating substrate can be 1-10 DEG C/minute
Clock, after deposition terminates, described titanium dioxide semiconductor film is cooled to room temperature in situ, and rate of temperature fall can be 1-10 DEG C/min.
Enumerate embodiment further below to describe the present invention in detail.It will similarly be understood that following example are served only for this
Bright it is further described, it is impossible to being interpreted as limiting the scope of the invention, those skilled in the art is according to the present invention's
Some nonessential improvement and adjustment that foregoing is made belong to protection scope of the present invention.The technique ginseng that following example is concrete
Number etc. is the most only an example in OK range, in the range of i.e. those skilled in the art can be done suitably by explanation herein
Select, and do not really want to be defined in the concrete numerical value of hereafter example.
Embodiment TiO2-δ/0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3(referred to as PMN-29PT) semiconductor ferroelectricity
The preparation of field-effect heterostructure, wherein PMN-29PT be oriented to (001).
Film preparation: high-purity Ti O2Ceramic block is target, carries out arteries and veins in the PMN-29PT single crystalline substrate that single-sided polishing is crossed
Impulse light deposition, obtains described TiO2-δ/ PMN-29PT semiconductor ferroelectric field effect heterojunction structure, wherein, pulsed laser deposition
The parameter of technology is: the PMN-29PT single crystalline substrate that (001) crossed by single-sided polishing is orientated puts into impulse laser deposition system
In reaction cavity, impulse laser deposition system cavity base vacuum is evacuated to less than 5 × 10-4Pa, and heat substrate to 600
DEG C, then reative cell vacuum is evacuated to less than 5 × 10-4Pa, and it is filled with oxygen extremely deposition oxygen pressure 0.5Pa, laser energy is that 3J/ puts down
Square centimetre, laser frequency is 5Hz, and substrate and target spacing are 5 centimetres, and sedimentation time is 20 minutes, obtains described TiO2- δFilm thickness is 148nm.
Described high-purity Ti O2The purity of ceramic target is more than 99.99%, and relative density is more than 97%.
Described deposition oxygen purity ＞ 99.999%, uses high purity oxygen gas to be preferably minimized by the impurity effect that environment is brought into, carries
Height prepares the quality of film.
Heating rate during silicon is 1-10 DEG C/min.
After deposition terminates, by prepared described TiO2-δ/ PMN-29PT semiconductor ferroelectric field effect heterojunction structure with 1-10 DEG C/
Minute rate of temperature fall be in situ cooled to room temperature.
Prepared by electrode: using PMN-29PT single crystalline substrate as grid, at substrate back gold evaporation electrode, connect grid and draw
Line, with TiO2-δFilm is as raceway groove, and gold evaporation film, as source electrode and drain electrode, connects source electrode and drain lead respectively, constructed
The schematic diagram of semiconductor ferroelectric field effect heterojunction structure be shown in Fig. 1, arrow therein represents polarised direction, defines polarization here
TiO is pointed in direction2-δFilm is positive polarization, and pointing to PMN-PT back electrode is negative polarization.Wherein, PMN-29PT single crystalline substrate
It is oriented to (001)；Substrate thickness: 0.5mm, length, width are 5mm；TiO2-δFilm thickness: 148nm, gold electricity
Pole thickness: 100nm.
Structural characterization: obtained semiconductor ferroelectric field effect heterojunction structure has been carried out following test, and result is shown in Fig. 2
In: Fig. 2 is the TiO of preparation in the embodiment of the present invention2-δThe structural characterization of/PMN-29PT semiconductor ferroelectric field effect heterojunction structure
Result.Fig. 2 (a) is X-ray diffraction (XRD) collection of illustrative plates at room temperature recorded, it is found that except PMN-29PT
(00l) (l=1,2,3) and TiO2-δ(00l) outside the diffraction maximum of (l=4,8), do not have other peaks to occur, show that film is single-phase
And along c-axis oriented growth.
Fig. 2 (b) and 2 (c) are respectively TiO2-δThe phi scanning in film and PMN-29PT single crystalline substrate (101) face
Figure, shows TiO2-δThin film epitaxial growth is in PMN-29PT single crystalline substrate.
Electric transport properties characterizes: Fig. 3 is the TiO of preparation in the embodiment of the present invention2-δ/ PMN-29PT semiconductor ferroelectric field effect
Resistance v. temperature (R-T) curve map of heterojunction structure film when single crystalline substrate is in positive and negative polarization state, wherein, illustration is
Substrate is respectively for the carrier concentration variation with temperature curve of film under positive and negative polarization state.From Fig. 3 it is found that surveying
In amount temperature interval, when substrate is in negative polarization state, film resistor is all higher than film resistor when substrate is in positive polarization state, accordingly
Ground, the former carrier concentration is substantially less than the latter, shows described TiO2-δ/ PMN-29PT semiconductor ferroelectric field effect heterojunction structure
Achieve the notable regulation and control to channel resistance of the applied bias electric field, it is achieved that substrate is in the different electricity of film under different polarized state
Resistance state.
Fig. 4 is temperature TiO of preparation in embodiment of the present invention when being 300K2-δ/ PMN-29PT semiconductor ferroelectric field effect is different
Matter structure resistivity-time curve map under positive and negative Electro-pulsing Field.Apply positively and negatively pulse as can be seen from Figure 4
Electric field available " conducting ", " insulation " two Resistance states, i.e. "ON" and "Off" respectively, show that applied bias electric field is permissible
Realize described TiO2-δThe regulation and control reversible, non-volatile of the channel resistance of/PMN-29PT semiconductor ferroelectric field effect heterojunction structure.
Claims (10)
1. a semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal, it is characterized in that, described semiconductor ferroelectric field effect heterojunction structure includes using lead magnesio-niobate lead titanates ferro-electricity single crystal as substrate and is TiO using the titanium dioxide semiconductor film that is formed on described substrate as raceway groove, the chemical general formula of described titanium dioxide semiconductor film2- δ, wherein 0≤δ≤0.2, preferably 0≤δ≤0.1.
Semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal the most according to claim 1, it is characterized in that, described semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal also includes that electrode, described electrode lay respectively at side and the titanium dioxide semiconductor film side of lead magnesio-niobate lead titanate monocrystal substrate.
Semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal the most according to claim 2, it is characterised in that described electrode is argent or gold.
4. according to the semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal according to any one of claim 1-3, it is characterised in that the chemical formula of described lead magnesio-niobate lead titanate monocrystal is (1-x) Pb (Mg1/3Nb2/3)O3-xPbTiO3, wherein, 0.28≤x≤0.35.
Semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal the most according to claim 4, it is characterised in that described lead magnesio-niobate lead titanate monocrystal be oriented to (001), (110) or (111), be preferably (001).
6. according to the semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal according to any one of claim 1-5, it is characterized in that, described lead magnesio-niobate lead titanates ferro-electricity single crystal substrate thickness is 0.05-1mm, and the thickness of described titanium dioxide semiconductor film is 10-500 nm.
7. the preparation method of semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal substrate as according to any one of claim 1-6, it is characterised in that with TiO2Ceramic block is target, uses pulsed laser deposition technique deposition of titanium oxide semiconductive thin film on lead magnesio-niobate lead titanate monocrystal.
Preparation method the most according to claim 7, it is characterised in that the technological parameter of described pulsed laser deposition technique includes: first impulse laser deposition system cavity is evacuated to ＜ 5 × 10-4 Pa, heat single crystalline substrate to 400-600 DEG C as depositing temperature, deposition oxygen pressure is 0.01-15 Pa, the thickness of film is realized controlling by controlling sedimentation time, common sedimentation time is 10-60 minute, laser energy density is 1-5 J/ square centimeter, and laser frequency is 1-5 Hz, and the distance between single crystalline substrate and target is 4-7 centimetre.
Preparation method the most according to claim 8, it is characterized in that, oxygen purity >=99.999% used during described deposition film, the heating rate of heating substrate is 1-10 DEG C/min, after deposition terminates, described titanium dioxide semiconductor film is cooled to room temperature in situ, and rate of temperature fall is 1-10 DEG C/min.
10. one kind comprises the field effect device of semiconductor ferroelectric field effect heterojunction structure based on lead magnesio-niobate lead titanate monocrystal according to any one of claim 1-6.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0354372A1 (en) * | 1988-07-19 | 1990-02-14 | Agency Of Industrial Science And Technology | Plurality of thin film field-effect transistors and method of manufacturing the same |
| US20090302314A1 (en) * | 2006-07-06 | 2009-12-10 | National Institute Of Adv Industrial Sci And Tech | P-type zinc oxide thin film and method for forming the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544093B (en) * | 2010-12-09 | 2014-02-05 | 中国科学院物理研究所 | Semiconductor field effect structure and preparation method and application thereof |
-
2016
- 2016-04-08 CN CN201610216788.9A patent/CN105762197B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0354372A1 (en) * | 1988-07-19 | 1990-02-14 | Agency Of Industrial Science And Technology | Plurality of thin film field-effect transistors and method of manufacturing the same |
| US20090302314A1 (en) * | 2006-07-06 | 2009-12-10 | National Institute Of Adv Industrial Sci And Tech | P-type zinc oxide thin film and method for forming the same |
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