CN109273596A - A kind of multi-layer phase change film material with high thermal stability, low power capabilities - Google Patents
A kind of multi-layer phase change film material with high thermal stability, low power capabilities Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 48
- 230000008859 change Effects 0.000 title claims abstract description 34
- 229910007657 ZnSb Inorganic materials 0.000 claims abstract description 129
- 229910005542 GaSb Inorganic materials 0.000 claims abstract description 121
- 239000010408 film Substances 0.000 claims abstract description 74
- 239000010409 thin film Substances 0.000 claims abstract description 44
- 239000002356 single layer Substances 0.000 claims abstract description 28
- 238000004544 sputter deposition Methods 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000013077 target material Substances 0.000 claims description 12
- 239000010410 layer Substances 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 6
- 238000005477 sputtering target Methods 0.000 claims description 5
- 238000004364 calculation method Methods 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 abstract description 11
- 230000008025 crystallization Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000012782 phase change material Substances 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
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- 229910021641 deionized water Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
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- 238000011065 in-situ storage Methods 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
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- 238000005265 energy consumption Methods 0.000 description 1
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Abstract
The present invention relates to a kind of materials of microelectronic field, and in particular to a kind of ZnSb/GaSb class superlattices phase change film material for high-speed phase change memory.ZnSb film and GaSb film are alternately arranged, wherein single layer ZnSb film with a thickness of 1~10nm, single layer GaSb film with a thickness of 1~10nm, the ZnSb/GaSb class superlattices phase-change thin film overall thickness is 2~100nm.Utilize the particularity of class superlattice structure, it is possible to reduce the heat loss in heating process reduces the overall thermal conductivity of film, to improve phase velocity.Secondly, can reduce crystallite dimension using the clamping effect at multilayer interface in class superlattice structure, so as to shorten crystallization time, inhibits crystallization, accelerate phase velocity while improving thermal stability.
Description
Technical field
The present invention relates to a kind of materials of microelectronic field, and in particular to a kind of ZnSb/ for high-speed phase change memory
GaSb class superlattices phase change film material.
Background technique
Phase transition storage (PCRAM) is to realize that information stores in crystalline state and amorphous huge resistance difference using material
Novel non-volatility memorizer.When phase-change material is in amorphous state have high electrical resistance, molecular structure be it is unordered, in crystalline state
With compared with low resistance, inner molecular structure be it is orderly, the resistance difference between binary states reaches 2 orders of magnitude or more.Pass through electricity
The Joule heat for flowing induction, may be implemented fast transition of the phase-change material between two Resistance states.PCRAM have stability it is strong,
Low in energy consumption, the advantages that storage density is high, compatible with traditional CMOS technology, thus the pass by more and more researchers and enterprise
Infuse (Kun Ren etc., Applied Physics Letter, 2014,104 (17): 173102).PCRAM with its big advantage,
It is considered as most potential one of next-generation nonvolatile memory.
Phase-change material is the core of PCRAM, and performance directly determines every technical performance of PCRAM.Ge2Sb2Te5It is mesh
Before the phase-change storage material that is widely used, although the balancing performance of its various aspects, without too big disadvantage, existing much has
Place (Zhou Xilin etc., Acta Materialia, 2013,61 (19): 7324-7333) to be improved.For example,
Ge2Sb2Te5Crystallization Mechanism of the film based on forming core makes its phase velocity slower, when being unable to satisfy the following high speed, big data
The message storage requirement in generation；Secondly, Ge2Sb2Te5The thermal stability of film is poor, and crystallization temperature only has 160 DEG C or so, is only capable of
Data are kept for 10 years under 85 DEG C of environment temperature, the requirement of the semiconductor chip of the following high integration can't be fully met.
With traditional single layer Ge2Sb2Te5Phase-change material is compared, and class superlattices phase-change material is given more sustained attention in recent years.It is super using class
The particularity of lattice structure, it is possible to reduce the heat loss in heating process reduces the overall thermal conductivity of film, to improve phase
Speed change degree (Yifeng Hu etc., Scripta Materialia, 2014,93:4-7).Secondly, using more in class superlattice structure
The clamping effect of bed boundary, can reduce crystallite dimension, so as to shorten crystallization time, inhibit crystallization, improve thermal stability
Accelerate phase velocity simultaneously.
Summary of the invention
The shortcomings that it is an object of the invention to overcome conventional phase change material and deficiency, providing one kind can be realized very fast phase transformation
ZnSb/GaSb class superlattices phase change film material of speed and preparation method thereof.
The present invention discloses a kind of ZnSb/GaSb class superlattices phase change film material first, and the ZnSb/GaSb class is super brilliant
ZnSb film and GaSb film are alternately arranged in lattice phase change film material, wherein single layer ZnSb film with a thickness of 1~10nm,
Single layer GaSb film with a thickness of 1~10nm, the ZnSb/GaSb class superlattices phase-change thin film overall thickness is 2~100nm.
ZnSb of the present invention indicates that the atomic ratio of Zn and Sb in the thin-film material is 25:75；GaSb indicates the film material
The atomic ratio of Ga and Sb is 35:65 in material.
Utilize the particularity of class superlattice structure, it is possible to reduce the heat loss in heating process reduces the entirety of film
Thermal conductivity, to improve phase velocity.Secondly, can reduce crystalline substance using the clamping effect at multilayer interface in class superlattice structure
Particle size inhibits crystallization, accelerates phase velocity while improving thermal stability so as to shorten crystallization time.
To achieve the above object, the present invention adopts the following technical scheme:
ZnSb/GaSb class superlattices phase-change thin film of the invention, by ZnSb and GaSb layers of magnetron sputtering alternating deposit,
Nanometer scale is combined.
ZnSb/GaSb class superlattices phase-change thin film of the invention, single layer ZnSb film and single layer GaSb film therein are handed over
For being arranged in multi-layer film structure, and the thickness range of single layer ZnSb film is 1~10nm, the thickness range of single layer GaSb film is 1~
10nm。
The structure of ZnSb/GaSb class superlattices phase-change thin film of the invention meets general formula: [ZnSb (a)/GaSb
(b)]x, a, b respectively indicate the thickness of the single layer ZnSb film and single layer GaSb film in formula, and 1≤a≤10nm, 1≤b≤
10nm, x indicate the alternate cycle number or the alternating number of plies of single layer ZnSb and single layer GaSb film, and x is positive integer.Phase-change thin film
Overall thickness can be obtained by the THICKNESS CALCULATION of x and the single layer ZnSb and single layer GaSb film, i.e. (a+b) * x (nm).The present invention
The overall thickness of ZnSb/GaSb class superlattices phase-change thin film be about 2-100nm.
ZnSb/GaSb class superlattices phase-change thin film of the present invention is prepared using magnetically controlled sputter method, and substrate uses
SiO2/ Si (100) substrate, sputtering target material are ZnSb and GaSb, and sputter gas is high-purity Ar gas.
Preferably, the purity of the ZnSb and GaSb target is in 99.999% or more atomic percent, background vacuum
No more than 3 × 10-4Pa。
Preferably, the ZnSb target and GaSb target is all made of radio-frequency power supply, and sputtering power is 65-70W；Sputtering
Power is preferably 65W.
Preferably, the purity of the Ar gas is 99.999% or more percent by volume, gas flow 45-55SCCM splashes
Pressure of emanating is 0.60-0.70Pa；Preferably, the gas flow is 50SCCM, sputtering pressure 0.65Pa.
The thickness of ZnSb/GaSb class superlattices phase-change thin film of the present invention can be regulated and controled by sputtering time.
The preparation process of ZnSb/GaSb class superlattices phase change film material of the present invention specifically includes the following steps:
4) SiO is cleaned2/ Si (100) substrate；
5) sputtering target material is installed；Set sputtering power, setting sputtering Ar throughput and sputtering pressure；
6) ZnSb/GaSb class superlattices phase change film material is prepared using room temperature magnetically controlled sputter method；
F) space base support is rotated into ZnSb target position, opens the radio-frequency power supply on ZnSb target, according to setting sputtering time (such as
300s), start to sputter ZnSb target material surface, clean ZnSb target position surface；
G) after the completion of ZnSb target position surface cleaning, the radio-frequency power supply applied on ZnSb target position is closed, space base support is rotated
To GaSb target position, the radio-frequency power supply opened on GaSb target starts according to the sputtering time (such as 300s) of setting to GaSb target table
Face is sputtered, and GaSb target position surface is cleaned；
H) after the completion of GaSb target position surface cleaning, substrate to be sputtered is rotated into ZnSb target position, is opened on ZnSb target position
Radio-frequency power supply start to sputter ZnSb film according to the sputtering time of setting；
I) after the completion of ZnSb thin film sputtering, the radio-frequency alternating current power supply applied on ZnSb target is closed, substrate is rotated to
GaSb target position opens GaSb target position radio-frequency power supply, according to the sputtering time of setting, starts to sputter GaSb film；
J) c) and d) two step is repeated, i.e., in SiO2ZnSb/GaSb class superlattices phase-change thin film is prepared on/Si (100) substrate
Material.Under the premise of overall thickness is fixed, for the film of a certain determining periodicity, pass through splashing for control ZnSb and GaSb target
The time is penetrated to adjust the thickness of ZnSb and GaSb single thin film in the film period, thus the ZnSb/GaSb class of structure needed for being formed
Superlattices phase change film material.
ZnSb/GaSb class superlattices phase change film material of the invention is to deposit ZnSb layers and GaSb by alternating sputtering
Layer, is combined in nanometer scale.
ZnSb/GaSb class superlattices phase change film material of the invention can be applied to phase transition storage, with traditional phase
Thinning membrane material compare have the advantages that firstly, using class superlattice structure particularity, can hinder in heating process
Phonon transmitting reduces the overall thermal conductivity of film to reduce heat loss, improves heating efficiency, reduces power consumption.Secondly, sharp
With the clamping effect at multilayer interface in class superlattice structure, crystallite dimension can reduce, so as to shorten crystallization time, inhibit brilliant
Change, accelerate phase velocity while improving thermal stability, finally makes phase transition storage with faster service speed and more
Low operation power consumption.
Detailed description of the invention
Fig. 1: the In-situ resistance of the ZnSb/GaSb class superlattices phase change film material of different-thickness of the invention and temperature
Relation curve；
Fig. 2: ZnSb/GaSb class superlattices phase change film material and tradition Ge of the invention2Sb2Te5When thin-film material fails
Between corresponding relationship curve with inverse temperature.
Fig. 3: [ZnSb (a)/GaSb (b)] of the inventionxThe Kubelka-Munk functional image of nano phase change thin-film material.
Specific embodiment
The present invention is further explained combined with specific embodiments below, it should be appreciated that these embodiments are merely to illustrate the present invention
Rather than it limits the scope of the invention.Those skilled in the art can be understood easily by content disclosed by this specification
Other advantages of the invention and effect.The present invention can also be embodied or applied by other different embodiments,
Without departing from the spirit of the present invention the various details in this specification can also be carried out various based on different viewpoints and application
Modifications and changes.
Embodiment
[ZnSb (a)/GaSb (b)] is prepared in the present embodimentxMaterial structure is specific [ZnSb (5)/GaSb (5)]10、[ZnSb
(6)/GaSb(4)]10、[ZnSb(7)/GaSb(3)]10。
Preparation step are as follows:
1. cleaning SiO2/ Si (100) substrate, clean the surface, the back side remove dust granule, organic and inorganic impurity；
A) it is cleaned by ultrasonic by force in acetone soln 50-60 minutes, deionized water is rinsed；
B) it is cleaned by ultrasonic by force in ethanol solution 40-50 minutes, deionized water is rinsed, high-purity N2Dry up surface and the back side；
C) in 160 DEG C of drying in oven steam, about 35 minutes.
2. preparing [ZnSb (a)/GaSb (b)] using room temperature magnetically controlled sputter methodxPrepare before multi-layer compound film:
A) ZnSb and GaSb sputtering target material is installed, the purity of target reaches 99.999% (atomic percent), and incite somebody to action this
Bottom vacuum is evacuated to 1 × 10-4Pa；
B) sputtering power is set as 65W；
C) use high-purity Ar as sputter gas (percent by volume reaches 99.999%), set Ar throughput as
50SCCM, and sputtering pressure is adjusted to 0.65Pa.
3. preparing [ZnSb (a)/GaSb (b)] using magnetic control alternating sputtering methodxMulti-layer compound film:
A) space base support is rotated into ZnSb target position, opens the radio-frequency alternating current power supply on ZnSb target, according to setting sputtering when
Between, start to sputter ZnSb target material surface, cleans ZnSb target position surface；
B) after the completion of ZnSb target position surface cleaning, the radio-frequency alternating current power supply applied on ZnSb target position is closed, it will be by space base
Support rotates to GaSb target position, and the radio-frequency power supply opened on GaSb target starts according to the sputtering time of setting to GaSb target material surface
It is sputtered, cleans GaSb target position surface；
C) after the completion of GaSb target position surface cleaning, substrate to be sputtered is rotated into ZnSb target position, is opened on ZnSb target position
Radio-frequency alternating current power supply start to sputter ZnSb film according to the sputtering time of setting；
D) after the completion of ZnSb thin film sputtering, the radio-frequency alternating current power supply applied on ZnSb target is closed, substrate is rotated to
GaSb target position opens GaSb target position radio-frequency power supply, according to the sputtering time of setting, starts to sputter GaSb film；
E) c) and d) two step is repeated, i.e., in SiO2[ZnSb (a)/GaSb (b)] is prepared on/Si (100) substratexMULTILAYER COMPOSITE
Phase change film material.
It is final to obtain [ZnSb (5)/GaSb (5)]10、[ZnSb(6)/GaSb(4)]10、[ZnSb(7)/GaSb(3)]10。
Class superlattices phase change film material, film thickness are controlled by sputtering time, and the sputter rate of ZnSb is 6.7s/
The sputter rate of nm, GaSb are 4.5s/nm.
Comparative experiments
Comparative example 1
Single layer GST phase change film material, thickness 100nm are prepared in this comparative example.
Preparation step are as follows:
1. cleaning SiO2/ Si (100) substrate, clean the surface, the back side remove dust granule, organic and inorganic impurity；
A) it is cleaned by ultrasonic by force in acetone soln 40-50 minutes, deionized water is rinsed；
B) it is cleaned by ultrasonic by force in ethanol solution 50-60 minutes, deionized water is rinsed, high-purity N2Dry up surface and the back side；
C) in 160 DEG C of drying in oven steam, about 40 minutes.
2. using preparing before RF sputtering method preparation ZnSb film:
A) GST sputtering target material is installed, the purity of target reaches 99.999% (atomic percent), and base vacuum is taken out
To 4 × 10-4Pa；
B) sputtering power 50W is set；
C) use high-purity Ar gas as sputter gas (percent by volume reaches 99.999%), set Ar throughput as
50SCCM, and sputtering pressure is adjusted to 0.65Pa.
3. preparing GST nano phase change thin-film material using magnetically controlled sputter method:
A) space base support is rotated into GST target position, opens the radio-frequency power supply applied on GST target, according to setting sputtering when
Between (100s), start to sputter GST target, clean GST target material surface；
B) after the completion of the cleaning of GST target material surface, the radio-frequency alternating current power supply applied on GST target is closed, it will be for sputtering substrate
GST target position is rotated to, GST target position radio-frequency alternating current power supply is opened, according to the sputtering time (244s) of setting, starts to sputter single layer
GST film.
Experimental method and result
3 kinds [ZnSb (a)/GaSb (b)] prepared by embodimentxClass superlattices phase change film material is tested to obtain each
The In-situ resistance of phase change film material and relation curve Fig. 1 of temperature.
By [ZnSb (a)/GaSb (b)] of above-described embodiment 2xThe single layer of class superlattices phase change film material and comparative example
GST tradition phase change film material is tested, and the out-of-service time of each phase change film material and the corresponding relationship of inverse temperature are obtained
Shown in curve graph 2.
As shown in Figure 1, with [ZnSb (a)/GaSb (b)]xThe increasing of ZnSb layers of relative thickness in class superlattices phase-change thin film
Add, the crystallization temperature of phase-change thin film reduces, and lower crystallization temperature means smaller activation potential barrier, can reduce phase transition process
In power consumption.
Fig. 2 is [ZnSb (a)/GaSb (b)] of the inventionxOut-of-service time of nano phase change thin-film material and inverse temperature
Corresponding relationship curve.According to one of unified judgment criteria in the industry, corresponding temperature when being kept data 10 years using phase-change material
It spends to judge the data holding ability of material.As can be seen that with [ZnSb (a)/GaSb (b)]xIn class superlattices phase-change thin film
The increase of GaSb layers of relative thickness, the temperature that thin-film material data are kept for 10 years gradually rise, traditional Ge2Sb2Te5Film material
The temperature that data are kept for 10 years is 85 DEG C by material.And [ZnSb (5)/GaSb (5)] of the invention10、[ZnSb(6)/GaSb
(4)]10、[ZnSb(7)/GaSb(3)]10The temperature that data are kept for 10 years has been respectively increased class superlattices phase change film material
97 DEG C, 98 DEG C and 107 DEG C.That is, [ZnSb (a)/GaSb (b)] of the inventionxClass superlattices phase change film material has
Than traditional Ge2Sb2Te5The more excellent data holding ability of thin-film material.
Fig. 3 is [ZnSb (a)/GaSb (b)] of the inventionxThe Kubelka-Munk functional arrangement of nano phase change thin-film material
Picture.Usual band gap is worth size to measure the amorphous state resistance of inorganic non-metallic material, if band gap is bigger,
Carrier concentration is lower in gap, and Thin film conductive performance is poorer, and amorphous state resistance is higher, and on the contrary then amorphous state resistance is got over
It is low.As can be seen that with [ZnSb (a)/GaSb (b)]xThe increase of GaSb layers of relative thickness, energy band in class superlattices phase-change thin film
Gap is also incremented by therewith, i.e. [ZnSb (5)/GaSb (5)]10、[ZnSb(6)/GaSb(4)]10、[ZnSb(7)/GaSb(3)]10Phase
The band gap of variation film is respectively 0.34eV, 0.45eV and 0.49eV.That is, [ZnSb (a)/GaSb of the invention
(b)]xWith the increase of GaSb thickness degree, amorphous state resistance also increases, and crystalline resistance is bigger, and the power consumption during SET is got over
It is low.
The above, only presently preferred embodiments of the present invention, not to the present invention in any form with substantial limitation,
It should be pointed out that for those skilled in the art, in the premise for not departing from the method for the present invention, if can also make
Dry to improve and supplement, these are improved and supplement also should be regarded as protection scope of the present invention.All those skilled in the art,
In the case where not departing from the spirit and scope of the present invention, when made using disclosed above technology contents it is a little more
Dynamic, modification and the equivalent variations developed, are equivalent embodiment of the invention；Meanwhile all substantial technologicals pair according to the present invention
The variation, modification and evolution of any equivalent variations made by above-described embodiment, still fall within the range of technical solution of the present invention
It is interior.
Claims (10)
1. a kind of ZnSb/GaSb class superlattices phase-change thin film, it is characterised in that: the ZnSb/GaSb class superlattices phase-change thin film
It is alternately stacked by single layer ZnSb film and single layer GaSb film and is arranged in multi-layer film structure.
2. ZnSb/GaSb class superlattices phase-change thin film according to claim 1, which is characterized in that single layer ZnSb film
Thickness range is 1~10nm, and the thickness range of single layer GaSb film is 1~10nm, and the ZnSb/GaSb class superlattices are mutually thinning
The overall thickness of film is 2-100nm.
3. ZnSb/GaSb class superlattices phase-change thin film according to claim 1, it is characterised in that: the ZnSb/GaSb class
The structure of superlattices phase-change thin film meets general formula: [ZnSb (a)/GaSb (b)]x, a, b respectively indicate the single layer in formula
The thickness of ZnSb film and single layer GaSb film, x indicate the alternate cycle number or alternating of single layer ZnSb and single layer GaSb film
The number of plies, and x is positive integer；The overall thickness of phase-change thin film can be by the THICKNESS CALCULATION of x and the single layer ZnSb and single layer GaSb film
Gained, i.e. [(a+b) * x] (nm)；
The ZnSb indicates that the atomic ratio of Zn and Sb in the thin-film material is 25:75；GaSb indicates Ga and Sb in the thin-film material
Atomic ratio be 35:65.
4. a kind of preparation method of ZnSb/GaSb class superlattices phase-change thin film described in claim 1,2 or 3, it is characterised in that:
The ZnSb/GaSb class superlattices phase-change thin film is prepared using magnetically controlled sputter method, and substrate uses SiO2/ Si (100) substrate, splashes
Material of shooting at the target is ZnSb and GaSb, and sputter gas is high-purity Ar gas.
5. the method according to claim 4 for preparing ZnSb/GaSb class superlattices phase-change thin film, which is characterized in that including
Following steps:
1) SiO is cleaned2/ Si (100) substrate；
2) sputtering target material is installed；Set sputtering power, setting sputtering Ar throughput and sputtering pressure；
3) ZnSb/GaSb class superlattices phase change film material is prepared using magnetically controlled sputter method；
A) space base support is rotated into ZnSb target position, the radio-frequency power supply on ZnSb target is opened, according to the sputtering time of setting to ZnSb
Target material surface is sputtered, and ZnSb target position surface is cleaned；
B) after the completion of ZnSb target position surface cleaning, the radio-frequency power supply applied on ZnSb target position is closed, space base support is rotated to
GaSb target position is opened the radio-frequency power supply on GaSb target, is sputtered according to the sputtering time of setting to GaSb target material surface, cleans
GaSb target position surface；
C) after the completion of GaSb target position surface cleaning, substrate to be sputtered is rotated into ZnSb target position, opens penetrating on ZnSb target position
Frequency power starts to sputter ZnSb film according to the sputtering time of setting；
D) after the completion of ZnSb thin film sputtering, the radio-frequency power supply applied on ZnSb target is closed, substrate is rotated into GaSb target position, is opened
GaSb target position radio-frequency power supply is opened, according to the sputtering time of setting, starts to sputter GaSb film；
E) c) and d) two step is repeated, i.e., in SiO2ZnSb/GaSb class superlattices phase change film material is prepared on/Si (100) substrate.
6. preparing the method for ZnSb/GaSb class superlattices phase-change thin film according to claim 4, which is characterized in that described
The purity of ZnSb and GaSb target is not more than 3 × 10 in 99.999% or more atomic percent, background vacuum-4Pa。
7. preparing the method for ZnSb/GaSb class superlattices phase-change thin film according to claim 4, which is characterized in that described
ZnSb target and GaSb target use radio-frequency power supply, sputtering power 65-70W.
8. preparing the method for ZnSb/GaSb class superlattices phase-change thin film according to claim 4, which is characterized in that the Ar
The purity of gas is 99.999% or more percent by volume, gas flow 45-55SCCM, sputtering pressure 0.60-0.70Pa.
9. preparing the method for ZnSb/GaSb class superlattices phase-change thin film according to claim 4, which is characterized in that described
The thickness of ZnSb/GaSb class superlattices phase-change thin film is regulated and controled by sputtering time.
10. a kind of application of any ZnSb/GaSb class superlattices phase-change thin film of claim 1-3 in phase transition storage.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109285944A (en) * | 2018-08-09 | 2019-01-29 | 江苏理工学院 | A kind of class superlattices phase change film material with fast transition performance |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070010082A1 (en) * | 2005-07-05 | 2007-01-11 | Cay-Uwe Pinnow | Structure and method for manufacturing phase change memories with particular switching characteristics |
| US20090146128A1 (en) * | 2007-12-10 | 2009-06-11 | Electronics And Telecommunications Research Institute | electrical device using phase change material, phase change memory device using solid state reaction and method for fabricating the same |
| CN102810636A (en) * | 2012-08-22 | 2012-12-05 | 中国科学院上海微系统与信息技术研究所 | Phase-changing memory unit with similar super lattice structure and preparation method thereof |
| CN104328326A (en) * | 2014-09-17 | 2015-02-04 | 宁波大学 | Zn-Sb-Se phase-change memory thin-film material for phase change memory |
| CN104900807A (en) * | 2015-06-10 | 2015-09-09 | 江苏理工学院 | Ga40Sb60/Sb superlattice phase transition film material for high-speed low-power-consumption phase change memory, and preparing method thereof |
| CN105304815A (en) * | 2015-10-28 | 2016-02-03 | 宁波大学 | Multilayer nano composite film material for low-power phase change random access memory and preparation method thereof |
| CN105514269A (en) * | 2015-12-18 | 2016-04-20 | 同济大学 | Nano composite stacked phase-change film and preparation method and application thereof |
| CN106374041A (en) * | 2016-09-26 | 2017-02-01 | 江苏理工学院 | Sb70sE30/SiO2 multilayer nano-composite phase change thin film material and preparation method and application thereof |
| CN108075039A (en) * | 2017-11-22 | 2018-05-25 | 宁波大学 | A kind of nano combined ZnO-ZnSb phase transiting storing thin-film materials and preparation method thereof |
| CN109285944A (en) * | 2018-08-09 | 2019-01-29 | 江苏理工学院 | A kind of class superlattices phase change film material with fast transition performance |
-
2018
- 2018-08-09 CN CN201810902452.7A patent/CN109273596B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070010082A1 (en) * | 2005-07-05 | 2007-01-11 | Cay-Uwe Pinnow | Structure and method for manufacturing phase change memories with particular switching characteristics |
| US20090146128A1 (en) * | 2007-12-10 | 2009-06-11 | Electronics And Telecommunications Research Institute | electrical device using phase change material, phase change memory device using solid state reaction and method for fabricating the same |
| CN102810636A (en) * | 2012-08-22 | 2012-12-05 | 中国科学院上海微系统与信息技术研究所 | Phase-changing memory unit with similar super lattice structure and preparation method thereof |
| CN104328326A (en) * | 2014-09-17 | 2015-02-04 | 宁波大学 | Zn-Sb-Se phase-change memory thin-film material for phase change memory |
| CN104900807A (en) * | 2015-06-10 | 2015-09-09 | 江苏理工学院 | Ga40Sb60/Sb superlattice phase transition film material for high-speed low-power-consumption phase change memory, and preparing method thereof |
| CN105304815A (en) * | 2015-10-28 | 2016-02-03 | 宁波大学 | Multilayer nano composite film material for low-power phase change random access memory and preparation method thereof |
| CN105514269A (en) * | 2015-12-18 | 2016-04-20 | 同济大学 | Nano composite stacked phase-change film and preparation method and application thereof |
| CN106374041A (en) * | 2016-09-26 | 2017-02-01 | 江苏理工学院 | Sb70sE30/SiO2 multilayer nano-composite phase change thin film material and preparation method and application thereof |
| CN108075039A (en) * | 2017-11-22 | 2018-05-25 | 宁波大学 | A kind of nano combined ZnO-ZnSb phase transiting storing thin-film materials and preparation method thereof |
| CN109285944A (en) * | 2018-08-09 | 2019-01-29 | 江苏理工学院 | A kind of class superlattices phase change film material with fast transition performance |
Non-Patent Citations (1)
| Title |
|---|
| YIMIN CHEN等: ""Crystallization behaviors of ZnxSb100−x thin films for ultralong data retention phase change memory applications"", 《CRYSTENGCOMM》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109285944A (en) * | 2018-08-09 | 2019-01-29 | 江苏理工学院 | A kind of class superlattices phase change film material with fast transition performance |
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