CN109686840A - Flexible multi-layered compound GeTe/ZnSb phase change film material of one kind and preparation method thereof - Google Patents
Flexible multi-layered compound GeTe/ZnSb phase change film material of one kind and preparation method thereof Download PDFInfo
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- CN109686840A CN109686840A CN201811605991.0A CN201811605991A CN109686840A CN 109686840 A CN109686840 A CN 109686840A CN 201811605991 A CN201811605991 A CN 201811605991A CN 109686840 A CN109686840 A CN 109686840A
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- 229910007657 ZnSb Inorganic materials 0.000 title claims abstract description 89
- 229910005900 GeTe Inorganic materials 0.000 title claims abstract description 85
- 239000000463 material Substances 0.000 title claims abstract description 67
- 230000008859 change Effects 0.000 title claims abstract description 32
- 150000001875 compounds Chemical class 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000004544 sputter deposition Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 13
- 239000013077 target material Substances 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000005477 sputtering target Methods 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 47
- 239000010409 thin film Substances 0.000 abstract description 14
- 239000011232 storage material Substances 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 17
- 239000002356 single layer Substances 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910000618 GeSbTe Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- -1 chalcogenide compound Chemical class 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910018321 SbTe Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention belongs to microelectronic films field of material technology, more particularly to a kind of flexible multi-layered compound GeTe/ZnSb phase change film material and preparation method thereof, the thin-film material is combined by GeTe film layer and ZnSb film layer alternating deposit, wherein GeTe film layer with a thickness of 1-10nm, ZnSb film layer with a thickness of 1-10nm, GeTe/ZnSb phase change film material overall thickness is 40-60nm.Thin-film material prepared by the present invention has preferable thermal stability, lower power consumption, is ideal phase-change storage material.
Description
Technical field
The invention belongs to microelectronic films field of material technology, and in particular to a kind of flexible multi-layered compound GeTe/ZnSb phase
Thinning membrane material and preparation method thereof.
Background technique
Phase transition storage (PCRAM) is to rely in phase change cells as a kind of emerging memory, its memory mechanism
Sulphur based material stable and reversible phase transformation carries out the storages of data between crystalline and amorphous, have non-volatile, high
Speed, high density, low-power consumption, the long-life, data retention is good, scaling performance is good and with existing complementary metal oxide semiconductor
The advantage that technique is mutually compatible with most possibly replaces current DRAM and NAND, FLASH and becomes the semiconductor storage unit of mainstream
One of.With the miniaturization and integrated development of electronic equipment, can fold, the flexible memory of deformation is increasingly by weight
Depending on the requirement for this to flexible phase-change material is also constantly increasing.
In terms of phase-change storage material, current research is concentrated mainly on chalcogenide compound material.That reports at present is available
In the chalcogenide compound of PCRAM mainly include GeSbTe, SbTe and GeTe3 kind material system.These material systems have respective
Advantage, can satisfy different memory application demands.In contrast, GeSbTe is most study, phase transformation the most mature
Material system (Wu Liang ability etc., Chinese science, 2016,46 (10) 107309).GeSbTe system mainly includes Ge2Sb2Te5
(GST),Ge1Sb4Te7,Ge1Sb2Te4Deng wherein GST material is that current approved widely used comprehensive performance is optimal most
Competitive phase-change memory material.Ge2Sb2Te5It is the phase-change storage material being widely used at present, although its various aspects
Without too big disadvantage, but there are places that are many to be improved and improving in balancing performance, but its higher fusing point and lower
Crystalline resistance make PCRAM that biggish driving current be needed to complete RESET operation, and then lead to biggish power consumption；Secondly,
Ge2Sb2Te5The thermal stability of film is poor, and crystallization temperature only has 160 DEG C or so, is only capable of data under 85 DEG C of environment temperature
It is kept for 10 years, the requirement of the semiconductor chip of the following high integration can't be fully met；In addition, the crystallization machine based on forming core
System is unable to satisfy the message storage requirement of the following high speed, big data era so that its phase velocity is slower, and crystallization rate needs to be mentioned
It is high.It is desirable that be capable of forming clamping effect by the compound mode for carrying out GeTe and other materials, this is improved with this
It is bad that material has that thermal stability shows.
Summary of the invention
Invention broadly provides a kind of flexible multi-layered compound GeTe/ZnSb phase change film materials and preparation method thereof, should
Thin-film material has preferable thermal stability, lower power consumption, is ideal phase-change storage material.Its technical solution is as follows:
A kind of flexible multi-layered compound GeTe/ZnSb phase change film material, is replaced by GeTe film layer and ZnSb film layer
Deposition is combined, wherein GeTe film layer with a thickness of 1-10nm, ZnSb film layer with a thickness of 1-10nm, GeTe/ZnSb
Phase change film material overall thickness is 40-60nm.
Preferably, the thin-film material is prepared using magnetically controlled sputter method, and substrate is flexibility PET material, and sputtering target material is
GeTe and ZnSb.
Preferably, Ge, Te atomic ratio are 40:60 in GeTe film layer material, and Zn, Sb are former in ZnSb film layer material
Sub- ratio is 15:85.
A kind of preparation method of flexible multi-layered compound GeTe/ZnSb phase change film material, comprising the following steps:
(1) substrate base is cleaned；
(2) sputtering target material is installed, sputtering throughput, sputtering pressure and sputtering power are adjusted；
(3) space base support is rotated into GeTe target position, opens the radio-frequency power supply on GeTe target, set sputtering time, started pair
GeTe target material surface is sputtered, and GeTe target position surface is then cleaned；
(4) radio-frequency power supply applied on GeTe target position is closed, space base support is rotated into ZnSb target position, opens ZnSb target
On radio-frequency power supply, set sputtering time, start to sputter ZnSb target material surface, then clean ZnSb target position surface；
(5) substrate to be sputtered is rotated into GeTe target position, the radio-frequency power supply on GeTe target position is opened, when setting sputters
Between, start to sputter GeTe film layer；
(6) DC power supply applied on GeTe target is closed, substrate is rotated into ZnSb target position, opens ZnSb target position radio frequency
Power supply sets sputtering time, starts to sputter ZnSb film layer；
(7) step (5)-(6) are repeated, the GeTe/ZnSb phase change film material that overall thickness is 40-60nm is obtained.
Preferably, substrate base is flexible PET material in step (1).
Preferably, sputter gas used in step (2) is argon gas, flow 25-35SCCM, sputtering pressure 0.15-
0.35Pa。
Preferably, sputter gas flow is 30SCCM, sputtering pressure 0.4Pa.
Preferably, background vacuum is not more than 2 × 10-4Pa。
Using the above scheme, the invention has the following advantages that
Phase change film material prepared by the present invention is capable of forming folder by the way that GeTe and other materials are carried out compound mode
Holding effect is answered, and it is bad that improvement current material has that thermal stability shows, and the thin-film material has lower power consumption, is reason
The phase-change storage material thought.
Detailed description of the invention
Fig. 1 is the In-situ resistance of different materials and the graph of relation of temperature in embodiment 1 and comparative example 1；
Fig. 2 is the structural schematic diagram of the multicycle of the phase change film material of different-thickness in embodiment 1.
Specific embodiment
Experimental method in following embodiment is conventional method unless otherwise required, related experiment reagent and material
Material is conventional biochemical reagent and material unless otherwise required.
Embodiment 1
[GeTe (a)/ZnSb (b)] prepared in the present embodimentxThe overall thickness of class superlattices phase-change thin film is 50nm.In formula
A, b respectively indicates the thickness of the single layer GeTe film and single layer Sb film, and 1≤a≤10nm, 1≤b≤10nm, x indicate single
The alternate cycle number or the alternating number of plies of layer GeTe and single layer Sb film, and x is positive integer.The overall thickness of phase-change thin film can be by x
With the THICKNESS CALCULATION of the single layer GeTe and single layer ZnSb film obtained by, i.e., [(a+b) * x] (nm).
Material structure is specifically respectively
[GeTe(1nm)/ZnSb(9nm)]5、[GeTe(2nm)/ZnSb(8nm)]5、
[GeTe(3nm)/Sb(7nm)]5、[GeTe(7nm)/ZnSb(3nm)]5。
Preparation step are as follows:
1. cleaning PET material, clean the surface, the back side remove dust granule, organic and inorganic impurity；
A) it is cleaned by ultrasonic by force in acetone soln 30 minutes, deionized water is rinsed；
B) it is cleaned by ultrasonic by force in ethanol solution 30 minutes, deionized water is rinsed, high-purity N2Dry up surface and the back side；
C) in 120 DEG C of drying in oven steam, about 30 minutes.
2. preparing [GeTe (a)/ZnSb (b)] using magnetically controlled sputter methodxPrepare before multi-layer compound film:
A) GeTe and ZnSb sputtering target material is installed, the purity of target reaches 99.999% (atomic percent), and incite somebody to action this
Bottom vacuum is evacuated to 1 × 10-4Pa；
B) sputtering power is set as 30W；
C) use high-purity Ar as sputter gas (percent by volume reaches 99.999%), set Ar throughput as
30SCCM, and sputtering pressure is adjusted to 0.4Pa.
3. preparing [GeTe (a)/ZnSb (b)] using magnetic control alternating sputtering methodxMulti-layer compound film:
A) space base support is rotated into GeTe target position, opens the radio-frequency power supply on GeTe target, according to setting sputtering time (such as
600s), start to sputter GeTe target material surface, clean GeTe target position surface；
B) after the completion of GeTe target position surface cleaning, the DC power supply applied on GeTe target position is closed, space base support is rotated
To ZnSb target position, the radio-frequency power supply opened on ZnSb target starts according to the sputtering time (such as 600s) of setting to ZnSb target table
Face is sputtered, and ZnSb target position surface is cleaned；
C) after the completion of ZnSb target position surface cleaning, substrate to be sputtered is rotated into ZnSb target position, is opened on ZnSb target position
AC power source start to sputter ZnSb film according to the sputtering time of setting；
D) after the completion of ZnSb thin film sputtering, the radio-frequency power supply applied on ZnSb target is closed, substrate is rotated into GeTe target
GeTe target position radio-frequency power supply is opened in position, according to the sputtering time of setting, starts to sputter GeTe film；
E) c) and d) two step is repeated, i.e., prepares [GeTe (a)/ZnSb (b)] in PET materialxMULTILAYER COMPOSITE phase-change thin film
Material.
It is final to obtain [GeTe (1nm)/ZnSb (9nm)]5、[GeTe(2nm)/ZnSb(8nm)]5、 [GeTe(3nm)/Sb
(7nm)]5、[GeTe(7nm)/ZnSb(3nm)]5Class superlattices phase change film material, the overall thickness of phase change film material are 50nm,
Film thickness is controlled by sputtering time, and the sputter rate of GeTe is 2.5s/nm, and the sputter rate of ZnSb is 2.6s/nm.Its
In-situ resistance and temperature relation testing result such as Fig. 1.As shown in Figure 1, under low temperature, two kinds of films are in high-resistance amorphous state,
With the continuous raising of temperature, film resistor is slowly reduced, and when reaching phase transition temperature, film starts crystallization, and corresponding resistance is opened
Beginning rapid decrease, after phase transition process, resistance is held essentially constant as the temperature rises.
Comparative example 1
Single layer ZnSb phase change film material, thickness 50nm are prepared in this comparative example.
Preparation step are as follows:
1. cleaning PET material, clean the surface, the back side remove dust granule, organic and inorganic impurity；
A) it is cleaned by ultrasonic by force in acetone soln 3-5 minutes, deionized water is rinsed；
B) it is cleaned by ultrasonic by force in ethanol solution 3-5 minutes, deionized water is rinsed, high-purity N2Dry up surface and the back side；
C) in 120 DEG C of drying in oven steam, about 20 minutes.
2. using preparing before RF sputtering method preparation ZnSb film:
A) ZnSb sputtering target material is installed, the purity of target reaches 99.999% (atomic percent), and by base vacuum
It is evacuated to 1 × 10-4Pa；
B) sputtering power 30W is set；
C) use high-purity Ar gas as sputter gas (percent by volume reaches 99.999%), set Ar throughput as
30SCCM, and sputtering pressure is adjusted to 0.4Pa.
3. preparing ZnSb nano phase change thin-film material using magnetically controlled sputter method:
A) space base support is rotated into ZnSb target position, the radio-frequency power supply applied on ZnSb target is opened, according to the sputtering of setting
Time (such as 100s) starts to sputter ZnSb target, cleans ZnSb target material surface；
B) after the completion of the cleaning of ZnSb target material surface, the radio-frequency power supply applied on ZnSb target is closed, substrate to be sputtered is revolved
ZnSb target position is gone to, ZnSb target position radio-frequency power supply is opened, according to the sputtering time (such as 250s) of setting, starts to sputter single layer ZnSb
Film.
Interpretation of result
By 4 kinds prepared in the above embodiments [GeTe (a)/ZnSb (b)]xClass superlattices phase change film material and comparative example
Single layer ZnSb phase change film material is tested to obtain relation curve such as Fig. 1 of the In-situ resistance of each phase change film material and temperature
It is shown.
As shown in Figure 1, [GeTe (1nm)/ZnSb (9nm)] of the invention5、 [GeTe(2nm)/ZnSb(8nm)]5、[GeTe
(3nm)/Sb(7nm)]5、 [GeTe(7nm)/ZnSb(3nm)]5The crystallization temperature of class superlattices phase change film material is respectively
205 DEG C, 210 DEG C, 230 DEG C and 245 DEG C as it can be seen that with [GeTe (a)/ZnSb (b)]xZnSb layers of phase in class superlattices phase-change thin film
The crystallization temperature of reduction to thickness, phase-change thin film is gradually increased, and higher crystallization temperature means that phase-change thin film is preferably non-
Brilliant thermal stability.Secondly, the amorphous state of film and the resistance of crystalline state increase, more with the increase of GeTe layers of relative thickness
Big resistance helps to improve the efficiency of heating process, to reduce operation power consumption.
Fig. 2 is [GeTe (a)/ZnSb (b)] of the inventionxThe structural schematic diagram of the multicycle of nano phase change thin-film material,
Layer a represents GeTe layers, and layer b represents ZnSb layers.
It will be apparent to those skilled in the art that can make various other according to the above description of the technical scheme and ideas
Corresponding change and deformation, and all these changes and deformation all should belong to the protection scope of the claims in the present invention
Within.
Claims (8)
1. a kind of flexible multi-layered compound GeTe/ZnSb phase change film material, it is characterised in that: it is thin by GeTe film layer and ZnSb
Film layer alternating deposit is combined, wherein GeTe film layer with a thickness of 1-10nm, ZnSb film layer with a thickness of 1-10nm,
GeTe/ZnSb phase change film material overall thickness is 40-60nm.
2. flexible multi-layered compound GeTe/ZnSb phase change film material according to claim 1, it is characterised in that: described thin
Membrane material is prepared using magnetically controlled sputter method, and substrate is flexible PET material, and sputtering target material is GeTe and ZnSb.
3. flexible multi-layered compound GeTe/ZnSb phase change film material according to claim 1, it is characterised in that: GeTe is thin
Ge, Te atomic ratio are 40:60 in film material, and Zn, Sb atomic ratio are 15:85 in ZnSb film layer material.
4. a kind of preparation method of flexible multi-layered compound GeTe/ZnSb phase change film material as described in claim 1, feature
It is: the following steps are included:
(1) substrate base is cleaned；
(2) sputtering target material is installed, sputtering throughput, sputtering pressure and sputtering power are adjusted；
(3) space base support is rotated into GeTe target position, opens the radio-frequency power supply on GeTe target, set sputtering time, start to GeTe
Target material surface is sputtered, and GeTe target position surface is then cleaned；
(4) radio-frequency power supply applied on GeTe target position is closed, space base support is rotated into ZnSb target position, opens penetrating on ZnSb target
Frequency power sets sputtering time, starts to sputter ZnSb target material surface, then cleans ZnSb target position surface；
(5) substrate to be sputtered is rotated into GeTe target position, opens the radio-frequency power supply on GeTe target position, set sputtering time, open
Begin sputtering GeTe film layer；
(6) DC power supply applied on GeTe target is closed, substrate is rotated into ZnSb target position, opens ZnSb target position radio frequency electrical
Source sets sputtering time, starts to sputter ZnSb film layer；
(7) step (5)-(6) are repeated, the GeTe/ZnSb phase change film material that overall thickness is 40-60nm is obtained.
5. the preparation method of flexible multi-layered compound GeTe/ZnSb phase change film material according to claim 4, feature exist
In: substrate base is flexible PET material in step (1).
6. the preparation method of flexible multi-layered compound GeTe/ZnSb phase change film material according to claim 4, feature exist
In: sputter gas used in step (2) is argon gas, flow 25-35SCCM, sputtering pressure 0.15-0.35Pa.
7. the preparation method of flexible multi-layered compound GeTe/ZnSb phase change film material according to claim 6, feature exist
In: sputter gas flow is 30SCCM, sputtering pressure 0.4Pa.
8. the preparation method of flexible multi-layered compound GeTe/ZnSb phase change film material according to claim 4, feature exist
In: background vacuum is not more than 2 × 10-4Pa。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109935685A (en) * | 2019-01-31 | 2019-06-25 | 华中科技大学 | A kind of method of controlled material Vacancy defect |
| CN113346012A (en) * | 2021-04-30 | 2021-09-03 | 华中科技大学 | Non-melting superlattice phase change film material |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101540370A (en) * | 2009-04-23 | 2009-09-23 | 同济大学 | GeTe/Sb2Te3 multilayer nanocomposite phase transition film and preparation method |
| CN102117885A (en) * | 2010-11-30 | 2011-07-06 | 同济大学 | Nanometer composite multilayer phase change thin-film material for phase change memory |
| CN104795494A (en) * | 2015-04-27 | 2015-07-22 | 江苏理工学院 | GeTe/Sb superlattice phase-change thin-film material for high-speed phase-change memory and preparation method thereof |
| CN105514269A (en) * | 2015-12-18 | 2016-04-20 | 同济大学 | Nano composite stacked phase-change film and preparation method and application thereof |
-
2018
- 2018-12-26 CN CN201811605991.0A patent/CN109686840A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101540370A (en) * | 2009-04-23 | 2009-09-23 | 同济大学 | GeTe/Sb2Te3 multilayer nanocomposite phase transition film and preparation method |
| CN102117885A (en) * | 2010-11-30 | 2011-07-06 | 同济大学 | Nanometer composite multilayer phase change thin-film material for phase change memory |
| CN104795494A (en) * | 2015-04-27 | 2015-07-22 | 江苏理工学院 | GeTe/Sb superlattice phase-change thin-film material for high-speed phase-change memory and preparation method thereof |
| CN105514269A (en) * | 2015-12-18 | 2016-04-20 | 同济大学 | Nano composite stacked phase-change film and preparation method and application thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109935685A (en) * | 2019-01-31 | 2019-06-25 | 华中科技大学 | A kind of method of controlled material Vacancy defect |
| CN113346012A (en) * | 2021-04-30 | 2021-09-03 | 华中科技大学 | Non-melting superlattice phase change film material |
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Application publication date: 20190426 |
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