CN107195779A - A kind of GeSb/SiO2Multi-layer phase change film material, preparation method and application - Google Patents
A kind of GeSb/SiO2Multi-layer phase change film material, preparation method and application Download PDFInfo
- Publication number
- CN107195779A CN107195779A CN201710392719.8A CN201710392719A CN107195779A CN 107195779 A CN107195779 A CN 107195779A CN 201710392719 A CN201710392719 A CN 201710392719A CN 107195779 A CN107195779 A CN 107195779A
- Authority
- CN
- China
- Prior art keywords
- gesb
- sio
- phase change
- film material
- change film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910005872 GeSb Inorganic materials 0.000 title claims abstract description 156
- 239000000463 material Substances 0.000 title claims abstract description 87
- 230000008859 change Effects 0.000 title claims abstract description 63
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 140
- 239000010408 film Substances 0.000 claims abstract description 107
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 102
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 102
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 102
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 102
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 102
- 238000004544 sputter deposition Methods 0.000 claims abstract description 38
- 239000002131 composite material Substances 0.000 claims abstract description 36
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 238000004140 cleaning Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 239000013077 target material Substances 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 7
- 238000005477 sputtering target Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000012782 phase change material Substances 0.000 description 4
- 238000004506 ultrasonic cleaning Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 101100400452 Caenorhabditis elegans map-2 gene Proteins 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- -1 chalcogenide compound Chemical class 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 206010016256 fatigue Diseases 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of GeSb/SiO2Multi-layer phase change film material, preparation method and application, the thin-film material include GeSb films and SiO2Film, GeSb films and SiO2Film is alternately arranged.The present invention is compared to prior art, GeSb/SiO2MULTILAYER COMPOSITE phase change film material is to deposit GeSb layers and SiO by alternating sputtering2Layer, and be composited in nanometer scale, product heat endurance is improved, and with relatively low power consumption.
Description
Technical field
The invention belongs to microelectronics technology, and in particular to a kind of GeSb/SiO2Multi-layer phase change film material, preparation side
Method and application.
Background technology
Existing a variety of semiconductor memory technologies at present, including conventional volatile storage technology (such as SRAM and DRAM) and non-
Volatile storage technology (such as EEPROM and Flash).Although these technologies have met a series of application, there is presently no
A kind of preferable, the semiconductor technology based on silicon materials, available for producing in enormous quantities, makes its storage performance have DRAM Gao Rong
Measure low cost, SRAM high speed, the data of flash memory non-volatile, reliability is high, operating voltage is low, small power consumption while have again
Performance.Phase transition storage (PCRAM) is the random access memory based on chalcogenide compound film, in Large Copacity, high density, height
Obvious advantage is shown in terms of speed, low-power consumption, low cost, and erasable speed is significantly faster than flash memory, and fatigability is more excellent,
It can realize that the circulation of more than one hundred million times is erasable, manufacturing process is simple simultaneously compatible with present ripe CMOS technology, can be easy to
Its memory cell is contracted to less size, dodged so phase transition storage is considered as most possible substitutes in the near future
It is saved as main flow nonvolatile memory.
When the principle of phase transition storage refers to that phase-change material is applied to PCRAM, mainly using it unordered and orderly two kinds
The obvious resistance value of difference is used as " 0 " of data storage, one state during state.In amorphous state, material shows as semiconductor spy
Property, its resistance value is high；In crystalline state, material shows as semimetal characteristic, and its resistance value is low.From metastable amorphous phase to stabilization
The transformation of the crystalline phase of state is to make its sufficient crystallising by heating the sufficiently long time to it more than its crystallization temperature and obtain
Arrive.Opposite process is then to be heated to melting by crystalline structure and it is quickly cooled down, that is, undergoes a short annealing process
Condense and obtain amorphous state.Ge2Sb2Te5It is phase-change storage material widely used at present, although the balancing performance of its each side,
Without too big shortcoming, but the heat endurance of its film is poor, and crystallization temperature only has 160 DEG C or so, is only capable of the ring at 85 DEG C
Data are kept for 10 years at a temperature of border, easily causes the hot crosstalk between different units in high-density storage and fails；Separately
Outside, higher fusing point and relatively low crystalline resistance cause the larger driving current of PCRAM needs to complete RESET operation, cause
Its RESET power consumption is larger.In recent years, MULTILAYER COMPOSITE phase change film material is given more sustained attention, with traditional individual layer Ge2Sb2Te5
Phase-change material is compared, and composite layered structure structure has high heat endurance, can greatly improve data holding ability.Second,
Using the clamping effect of many bed boundarys in multi-layer compound film material, crystallite dimension can be reduced, suppress crystallization, so as to shorten knot
The brilliant time, phase velocity (Shiyu Chen etc., Materials Science and are accelerated while heat endurance is improved
Engineering B,2017,218:59-63).3rd, resistivity of the MULTILAYER COMPOSITE phase-change thin film before and after phase transformation is larger, can
It is less with the energy needed for ensureing during SET and RESET, so as to substantially reduce the power consumption of PCRAM devices.Therefore class multilayer
Composite phase-change material is a kind of phase-change material for having very much a potentiality to be exploited.
The content of the invention
To solve the heat endurance difference and the higher defect of power consumption that prior art is present, the present invention provides a kind of GeSb/
SiO2Multi-layer phase change film material, preparation method and application.
In order to achieve the above object, technical scheme is as follows：
The present invention provides a kind of GeSb/SiO2Multi-layer phase change film material, it includes GeSb films and SiO2Film, GeSb
Film and SiO2Film is alternately arranged.
Wherein, the thickness of individual layer GeSb films is 1~4nm, individual layer SiO2The thickness of film is 6~9nm, GeSb/SiO2It is many
The gross thickness of layer phase change film material is no more than 50nm.
In addition, the structure of GeSb/SiO2 MULTILAYER COMPOSITE phase change film materials meets general formula：
[GeSb(a)nm/SiO2(b)nm]x；
Wherein, a, b represent individual layer GeSb films and individual layer SiO respectively2The thickness of film, 1≤a≤4nm, 6≤b≤9nm；
X represents individual layer SiO2With the alternate cycle number or the alternately number of plies, and x is positive integer of individual layer GeSb films.
The present invention also provides a kind of GeSb/SiO2The preparation method of multi-layer phase change film material, comprises the following steps：
S1, cleaning SiO2/ Si (100) substrate；
S2, install GeSb and SiO2Sputtering target material；Set sputtering power, sputtering Ar throughputs and sputtering pressure；
S3, using room temperature magnetically controlled sputter method prepare GeSb/SiO2MULTILAYER COMPOSITE phase change film material；
S30, the radio-frequency power supply rotated to space base support on GeSb target position, opening GeSb targets, according to the sputtering time of setting,
Start to sputter GeSb target material surfaces, cleaning GeSb target position surface；
After the completion of S31, GeSb target position surface cleaning, the radio-frequency power supply applied on GeSb target position is closed, space base support is revolved
Go to SiO2Target position, opens SiO2Radio-frequency power supply on target, according to the sputtering time of setting, starts to SiO2Target material surface is carried out
Sputtering, cleans SiO2Target position surface；
S32、SiO2After the completion of target position surface cleaning, substrate to be sputtered is rotated into GeSb target position, GeSb target position is opened
On radio-frequency power supply, according to the sputtering time of setting, start sputter GeSb films；
After the completion of S33, GeSb thin film sputtering, the radio-frequency power supply applied on GeSb targets is closed, substrate is rotated into SiO2
Target position, opens SiO2Target position radio-frequency power supply, according to the sputtering time of setting, starts to sputter SiO2Film；
S34, repetition S32 and the steps of S33 two, i.e., in SiO2GeSb/SiO is prepared on/Si (100) substrate2MULTILAYER COMPOSITE is mutually thinning
Membrane material.
It is preferred that, step S2 GeSb and SiO2The purity of target is in atomic percent more than 99.999%, base vacuum
Degree is not more than 4 × 10-4Pa。
It is preferred that, step S2 GeSb and SiO2Target uses radio-frequency power supply, and sputtering power is 25~35W.
It is preferred that, the purity of step S2 Ar gas is percent by volume more than 99.999%, gas flow is 25~
35SCCM, sputtering pressure is 0.15~0.35Pa.
It is preferred that, step S32 and step S33 are on the premise of gross thickness is fixed, for the film of a certain determination periodicity,
By controlling GeSb and SiO2The sputtering time of target adjusts GeSb and SiO in the film cycle2The thickness of single thin film, so that
The GeSb/SiO of structure needed for being formed2MULTILAYER COMPOSITE phase change film material.
The present invention also provides a kind of phase transition storage, and it applies GeSb/SiO2Multi-layer phase change film material is prepared from.
Beneficial effect：The present invention is compared to prior art, GeSb/SiO2MULTILAYER COMPOSITE phase change film material is by alternately
GeSb layers of sputtering sedimentation and SiO2Layer, and be composited in nanometer scale, product heat endurance is improved, and with relatively low work(
Consumption.
Brief description of the drawings
Fig. 1 is [GeSb (a) nm/SiO of the invention2(b)nm]xThe individual layer of MULTILAYER COMPOSITE phase change film material and comparative example
GeSb phase change film materials carry out testing the In-situ resistance for obtaining each phase change film material and the relation curve of temperature.
Fig. 2 is [GeSb (a)/SiO of the invention2(b)]xMULTILAYER COMPOSITE phase change film material and comparative example GeSb phases are thinning
The individual layer of membrane material test the corresponding relation curve of the out-of-service time for obtaining each phase change film material and inverse temperature.
Fig. 3 is [GeSb (a)/SiO of the invention2(b)]xMULTILAYER COMPOSITE phase change film material and comparative example GeSb phases are thinning
The individual layer of membrane material test the Kubelka-Munk curves for obtaining each phase change film material.
Embodiment
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
[GeSb (a) nm/SiO prepared in the present embodiment2(b)nm]xThe gross thickness of MULTILAYER COMPOSITE phase-change thin film is 50nm.
Material structure is respectively specifically [GeSb (1nm)/SiO2(9nm)]5、[GeSb(2nm)/SiO2(8nm)]5、[GeSb(3nm)/SiO2
(7nm)]5、[GeSb(4nm)/SiO2(6nm)]5。
The preparation process of the present embodiment is：
S1, cleaning SiO2/ Si (100) substrate, cleaning surface, the back side, removes dust granule, organic and inorganic impurity；
S10, strong ultrasonic cleaning 3-5 minutes, deionized water rinsing in acetone soln；
S11, strong ultrasonic cleaning 3-5 minutes in ethanol solution, deionized water rinsing, the drying surface of high-purity N 2 and the back side；
S12, in 120 DEG C of drying in oven steam, about 20 minutes；
S2, [GeSb (a)/SiO prepared using magnetically controlled sputter method2(b)]xPrepare before multi-layer compound film；
S20, install GeSb and SiO2Sputtering target material, the purity of target reaches 99.999% (atomic percent), and will
Base vacuum is evacuated to 1 × 10-4Pa；
S21, sputtering power is set as 30W；
S22, using high-purity Ar as sputter gas (percent by volume reaches 99.999%), set Ar throughputs as
30SCCM, and sputtering pressure is adjusted to 0.4Pa；
S3, [GeSb (a)/SiO prepared using magnetic control alternating sputtering method2(b)]xMulti-layer compound film；
S30, radio-frequency power supply space base support rotated on GeSb target position, opening GeSb targets, the sputtering time according to setting
(such as 200s), starts to sputter GeSb target material surfaces, cleaning GeSb target position surface；
After the completion of S31, GeSb target position surface cleaning, the dc source applied on GeSb target position is closed, space base support is revolved
Go to SiO2Target position, opens SiO2Radio-frequency power supply on target, according to the sputtering time (such as 100s) of setting, starts to SiO2Target
Surface is sputtered, and cleans SiO2Target position surface；
After the completion of S32, Sb target position surface cleaning, substrate to be sputtered is rotated into GeSb target position, opened on GeSb target position
AC power, according to the sputtering time of setting, start sputter GeSb films；
After the completion of S33, GeSb thin film sputtering, the radio-frequency power supply applied on GeSb targets is closed, substrate is rotated into SiO2
Target position, opens SiO2Target position radio-frequency power supply, according to the sputtering time of setting, starts to sputter SiO2Film；
S34, repeat step S32 and step S33, i.e., in SiO2[GeSb (a)/SiO is prepared on/Si (100) substrate2(b)]x
MULTILAYER COMPOSITE phase change film material.
It is final to obtain [GeSb (1nm)/SiO2(9nm)]5、[GeSb(2nm)/SiO2(8nm)]5、[GeSb(3nm)/SiO2
(7nm)]5、[GeSb(4nm)/SiO2(6nm)]5Compound multi-layer phase change film material, the gross thickness of phase change film material is about
50nm, film thickness is controlled by sputtering time, and GeSb sputter rate is 2.89s/nm, SiO2Sputter rate be
2.48s/nm.Its In-situ resistance and temperature relation testing result such as Fig. 1.As shown in Figure 1, under low temperature, two kinds of films are in high electricity
The amorphous state of resistance, with the continuous rise of temperature, film resistor is slowly reduced, when reaching phase transition temperature, and film starts crystallization, phase
The resistance answered starts rapid decrease, after phase transition process terminates, and is held essentially constant with the rise resistance of temperature.
Contrast experiment
Comparative example 1
Individual layer GeSb phase change film materials, thickness 50nm are prepared in this comparative example.
Preparation process is：
S1, cleaning SiO2/ Si (100) substrate, cleaning surface, the back side, removes dust granule, organic and inorganic impurity；
S10, strong ultrasonic cleaning 3-5 minutes, deionized water rinsing in acetone soln；
S11, strong ultrasonic cleaning 3-5 minutes in ethanol solution, deionized water rinsing, the drying surface of high-purity N 2 and the back side；
S12, in 120 DEG C of drying in oven steam, about 20 minutes；
S2, using RF sputtering method prepare Sb films before prepare；
S20, install Sb sputtering target materials, the purity of target reaches 99.999% (atomic percent), and by base vacuum
It is evacuated to 1 × 10-4Pa；
S21, setting sputtering power 30W；
S22, using high-purity Ar gas as sputter gas (percent by volume reaches 99.999%), set Ar throughputs as
30SCCM, and sputtering pressure is adjusted to 0.4Pa；
S3, using magnetically controlled sputter method prepare GeSb nano phase change thin-film materials；
S30, space base support rotates to GeSb target position, the radio-frequency power supply applied on GeSb targets is opened, according to splashing for setting
(such as 200s) is penetrated the time, starts to sputter GeSb targets, GeSb target material surfaces are cleaned；
After the completion of the cleaning of S31, GeSb target material surface, the radio-frequency power supply applied on GeSb targets is closed, by substrate to be sputtered
Rotate to GeSb target position, open GeSb target position radio-frequency power supplies, according to the sputtering time set as 144.5s (2.89s/nm ×
50nm), start to sputter individual layer GeSb films.(film thickness=sputter rate × sputtering time)
Experimental method and result
4 kinds of [GeSb (a) nm/SiO prepared by above-described embodiment2(b)nm]xMULTILAYER COMPOSITE phase change film material and contrast
The individual layer GeSb phase change film materials of example carry out testing the In-situ resistance for obtaining each phase change film material and the relation curve of temperature
As shown in Figure 1.
4 kinds of [GeSb (a)/SiO prepared by above-described embodiment2(b)]xMULTILAYER COMPOSITE phase change film material and comparative example
The individual layer of GeSb phase change film materials carries out testing the out-of-service time pass corresponding with inverse temperature for obtaining each phase change film material
It is shown in curve map 2.
4 kinds of [GeSb (a)/SiO prepared by above-described embodiment2(b)]xMULTILAYER COMPOSITE phase change film material and comparative example
The individual layer of GeSb phase change film materials test the Kubelka-Munk curves for obtaining each phase change film material, as shown in Figure 3.
As shown in Figure 1, all films before crystallization all in high-impedance state, and with [GeSb (a)/SiO2(b)]xMultilayer
SiO in composite phase-change thin-film material2The thickness increase of layer, resistivity is also increasing.It is all thin as temperature is gradually stepped up
Membrane material reaches crystallization temperature, [GeSb (1nm)/SiO2(9nm)]5、[GeSb(2nm)/SiO2(8nm)]5、[GeSb(3nm)/
SiO2(7nm)]5、[GeSb(4nm)/SiO2(6nm)]5, the crystallization temperature corresponding to GeSb (50nm) be respectively 218,199,
194th, 187 DEG C of 190and, higher crystallization temperature means the more preferable amorphous heat endurance of phase-change thin film, indicates [GeSb
(a)/SiO2(b)]xMULTILAYER COMPOSITE phase change film material is more stablized than individual layer GeSb thin-film materials.Secondly, with SiO2Layer
The increase of relative thickness, [GeSb (a)/SiO2(b)]xThe amorphous state of MULTILAYER COMPOSITE phase-change thin film and the resistance of crystalline state are increased,
Bigger resistance is favorably improved the efficiency of heating process, so as to reduce operation power consumption.Finally, it may also be seen that
[GeSb(a)/SiO2(b)]xMULTILAYER COMPOSITE phase change film material has differed three orders of magnitude from amorphous state to crystalline resistance, for
PCRAM application is especially suitable for.
Fig. 2 is [GeSb (a)/SiO of the invention2(b)]xMULTILAYER COMPOSITE phase change film material and comparative example GeSb phases are thinning
The out-of-service time of membrane material and the corresponding relation curve of inverse temperature.According to one of unified judgment criteria in the industry, phase transformation is utilized
Corresponding temperature judges the data holding ability of material when material keeps data 10 years.As can be seen that with [GeSb (a)/
SiO2(b)]xSiO in MULTILAYER COMPOSITE phase-change thin film2The increase of layer relative thickness, thin-film material data keep the temperature of 10 years gradually
Rise, traditional Ge2Sb2Te5The temperature that data are kept for 10 years is 85 DEG C by thin-film material.And the present invention [GeSb (1nm)/
SiO2(9nm)]5、[GeSb(2nm)/SiO2(8nm)]5、[GeSb(3nm)/SiO2(7nm)]5、[GeSb(4nm)/SiO2(6nm)]5
The temperature that data are kept for 10 years has been respectively increased 153 DEG C, 144 DEG C, 131 DEG C, 121 DEG C by MULTILAYER COMPOSITE phase change film material.
That is, [the GeSb (a)/SiO of the present invention2(b)]xMULTILAYER COMPOSITE phase change film material has than traditional Ge2Sb2Te5Film
The more excellent data holding ability of the GeSb thin-film materials of material and individual layer.Secondly, SiO is worked as2The increase of layer relative thickness,
[GeSb(a)/SiO2(b)]xActivation required for MULTILAYER COMPOSITE phase change film material can be bigger, illustrates [GeSb (a)/SiO2
(b)]xMULTILAYER COMPOSITE phase change film material is with SiO2The increase crystallization temperature of layer relative thickness is also improved, in the application significantly
Improve PCRAM heat endurance.
Fig. 3 is [GeSb (a)/SiO of the invention2(b)]xMULTILAYER COMPOSITE phase change film material and comparative example GeSb phases are thinning
Kubelka-Munk curve of the membrane material under noncrystalline state.As can be seen from the figure the optical band gap of GeSb thin-film materials than
[GeSb(a)/SiO2(b)]xMULTILAYER COMPOSITE phase change film material is small, about 1.16eV.With SiO2The increasing of relative thickness layer
Plus, [GeSb (a)/SiO2(b)]xThe optical band gap of MULTILAYER COMPOSITE phase change film material is also gradually to increase, respectively 1.20eV,
1.62eV, 1.80eV and 1.98eV.Due to the relation that optical band gap is directly proportional to band gap, therefore [GeSb (a)/SiO2
(b)]xMULTILAYER COMPOSITE phase change film material band gap is just wider than GeSb phase change film material, illustrates [GeSb (a)/SiO2
(b)]xThe carrier that MULTILAYER COMPOSITE phase change film material is possessed under amorphous state is less, and resistivity is higher, greatly reduces
Power consumption during SET.
The present invention also provides a kind of phase transition storage, and it applies GeSb/SiO2Multi-layer phase change film material is prepared from.
Above-described is only the preferred embodiment of the present invention, it is noted that for one of ordinary skill in the art
For, without departing from the concept of the premise of the invention, various modifications and improvements can be made, these belong to the present invention
Protection domain.
Claims (9)
1. a kind of GeSb/SiO2Multi-layer phase change film material, it is characterised in that GeSb/SiO2Multi-layer phase change film material includes
GeSb films and SiO2Film, GeSb films and SiO2Film is alternately arranged.
2. GeSb/SiO according to claim 12Multi-layer phase change film material, it is characterised in that the thickness of individual layer GeSb films
Spend for 1~4nm, individual layer SiO2The thickness of film is 6~9nm, GeSb/SiO2The gross thickness of multi-layer phase change film material is not surpass
Cross 50nm.
3. GeSb/SiO according to claim 12Multi-layer phase change film material, it is characterised in that GeSb/SiO2Multilayer is answered
The structure for closing phase change film material meets general formula：
[GeSb(a)nm/SiO2(b)nm]x；
Wherein, a, b represent individual layer GeSb films and individual layer SiO respectively2The thickness of film, 1≤a≤4nm, 6≤b≤9nm；
X represents individual layer SiO2With the alternate cycle number or the alternately number of plies, and x is positive integer of individual layer GeSb films.
4. a kind of GeSb/SiO2The preparation method of multi-layer phase change film material, it is characterised in that comprise the following steps：
S1, cleaning SiO2/ Si (100) substrate；
S2, install GeSb and SiO2Sputtering target material；Set sputtering power, sputtering Ar throughputs and sputtering pressure；
S3, using room temperature magnetically controlled sputter method prepare GeSb/SiO2MULTILAYER COMPOSITE phase change film material；
S30, the radio-frequency power supply rotated to space base support on GeSb target position, opening GeSb targets, according to the sputtering time of setting, start
GeSb target material surfaces are sputtered, cleaning GeSb target position surface；
After the completion of S31, GeSb target position surface cleaning, the radio-frequency power supply applied on GeSb target position is closed, space base support is rotated to
SiO2Target position, opens SiO2Radio-frequency power supply on target, according to the sputtering time of setting, starts to SiO2Target material surface is sputtered,
Clean SiO2Target position surface；
S32、SiO2After the completion of target position surface cleaning, substrate to be sputtered is rotated into GeSb target position, penetrating on GeSb target position is opened
Frequency power, according to the sputtering time of setting, starts to sputter GeSb films；
After the completion of S33, GeSb thin film sputtering, the radio-frequency power supply applied on GeSb targets is closed, substrate is rotated into SiO2Target position,
Open SiO2Target position radio-frequency power supply, according to the sputtering time of setting, starts to sputter SiO2Film；
S34, repetition S32 and the steps of S33 two, i.e., in SiO2GeSb/SiO is prepared on/Si (100) substrate2MULTILAYER COMPOSITE phase-change thin film material
Material.
5. GeSb/SiO according to claim 32The preparation method of multi-layer phase change film material, it is characterised in that step S2
GeSb and SiO2The purity of target is in atomic percent more than 99.999%, and background vacuum is not more than 4 × 10-4Pa。
6. GeSb/SiO according to claim 32The preparation method of multi-layer phase change film material, it is characterised in that step S2
GeSb and SiO2Target uses radio-frequency power supply, and sputtering power is 25~35W.
7. GeSb/SiO according to claim 32The preparation method of multi-layer phase change film material, it is characterised in that step S2
Ar gas purity be percent by volume more than 99.999%, gas flow be 25~35SCCM, sputtering pressure be 0.15~
0.35Pa。
8. GeSb/SiO according to claim 32The preparation method of multi-layer phase change film material, it is characterised in that step
S32 and step S33 is on the premise of gross thickness is fixed, for the film of a certain determination periodicity, by controlling GeSb and SiO2
The sputtering time of target adjusts GeSb and SiO in the film cycle2The thickness of single thin film, so that structure needed for being formed
GeSb/SiO2MULTILAYER COMPOSITE phase change film material.
9. a kind of phase transition storage, it is characterised in that it applies the GeSb/SiO as described in claim 1-3 is any2Multi-layer phase
Thinning membrane material is prepared from.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710392719.8A CN107195779A (en) | 2017-05-27 | 2017-05-27 | A kind of GeSb/SiO2Multi-layer phase change film material, preparation method and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710392719.8A CN107195779A (en) | 2017-05-27 | 2017-05-27 | A kind of GeSb/SiO2Multi-layer phase change film material, preparation method and application |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107195779A true CN107195779A (en) | 2017-09-22 |
Family
ID=59875967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710392719.8A Pending CN107195779A (en) | 2017-05-27 | 2017-05-27 | A kind of GeSb/SiO2Multi-layer phase change film material, preparation method and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107195779A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109037439A (en) * | 2018-06-28 | 2018-12-18 | 江苏理工学院 | Sn20Sb80/ Si multi-layer phase change film material and preparation method thereof |
| CN109817806A (en) * | 2018-12-26 | 2019-05-28 | 江苏理工学院 | A kind of ZnSb/SiO2Composite phase-change film and its preparation method and application |
| CN109817807A (en) * | 2018-12-26 | 2019-05-28 | 江苏理工学院 | One type superlattices ZnSb/SiO2Nano phase change thin-film material and preparation method thereof |
| CN109860388A (en) * | 2019-01-09 | 2019-06-07 | 江苏理工学院 | Multi-layer phase change film and preparation method and application |
| CN110233203A (en) * | 2018-03-06 | 2019-09-13 | 江苏理工学院 | A kind of class superlattices Zn-Sb/Ge-Sb nano phase change memory films and preparation method thereof for worst hot case |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6835531B1 (en) * | 1999-07-20 | 2004-12-28 | Samsung Electronics, Co., Ltd. | Phase change optical disc |
| US20050184282A1 (en) * | 2004-02-20 | 2005-08-25 | Li-Shyue Lai | Phase change memory cell and method of its manufacture |
| CN101299453A (en) * | 2008-06-13 | 2008-11-05 | 中国科学院上海微系统与信息技术研究所 | Nano composite phase-changing material and preparation method thereof |
| CN103390724A (en) * | 2012-05-07 | 2013-11-13 | 逢甲大学 | Ultra-thin and multi-layer structure phase change memory component |
-
2017
- 2017-05-27 CN CN201710392719.8A patent/CN107195779A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6835531B1 (en) * | 1999-07-20 | 2004-12-28 | Samsung Electronics, Co., Ltd. | Phase change optical disc |
| US20050184282A1 (en) * | 2004-02-20 | 2005-08-25 | Li-Shyue Lai | Phase change memory cell and method of its manufacture |
| CN101299453A (en) * | 2008-06-13 | 2008-11-05 | 中国科学院上海微系统与信息技术研究所 | Nano composite phase-changing material and preparation method thereof |
| CN103390724A (en) * | 2012-05-07 | 2013-11-13 | 逢甲大学 | Ultra-thin and multi-layer structure phase change memory component |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110233203A (en) * | 2018-03-06 | 2019-09-13 | 江苏理工学院 | A kind of class superlattices Zn-Sb/Ge-Sb nano phase change memory films and preparation method thereof for worst hot case |
| CN110233203B (en) * | 2018-03-06 | 2023-04-07 | 江苏理工学院 | Superlattice-like Zn-Sb/Ge-Sb nano phase change storage film for high-temperature working condition and preparation method thereof |
| CN109037439A (en) * | 2018-06-28 | 2018-12-18 | 江苏理工学院 | Sn20Sb80/ Si multi-layer phase change film material and preparation method thereof |
| CN109817806A (en) * | 2018-12-26 | 2019-05-28 | 江苏理工学院 | A kind of ZnSb/SiO2Composite phase-change film and its preparation method and application |
| CN109817807A (en) * | 2018-12-26 | 2019-05-28 | 江苏理工学院 | One type superlattices ZnSb/SiO2Nano phase change thin-film material and preparation method thereof |
| CN109817806B (en) * | 2018-12-26 | 2023-04-07 | 江苏理工学院 | ZnSb/SiO2 composite phase change film and preparation method and application thereof |
| CN109860388A (en) * | 2019-01-09 | 2019-06-07 | 江苏理工学院 | Multi-layer phase change film and preparation method and application |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107195779A (en) | A kind of GeSb/SiO2Multi-layer phase change film material, preparation method and application | |
| CN102683587B (en) | Silicon-tin selenide nano multilayer composite phase change thin film material for phase change memory | |
| CN108539013B (en) | Ge/Sb superlattice phase-change thin film material for high-speed low-power-consumption phase-change memory | |
| CN105762277B (en) | One type superlattices tin selenium/antimony nano phase change film and its preparation and application | |
| CN104900807B (en) | Ga for high-speed low-power-consumption phase change memory40Sb60/ Sb class superlattices phase change film materials and preparation method thereof | |
| CN106185799B (en) | A kind of SiO2/ Sb class superlattices nano phase change thin-film material and its preparation method and application | |
| CN106374041B (en) | A kind of Sb70Se30/SiO2Multi-layer nano composite phase-change thin-film material and its preparation method and application | |
| CN101807665B (en) | Crystallization temperature-adjustable Ga30Sb70/Sb80Te20 nano composite multi-layer phase-change thin-film material | |
| CN105679934B (en) | A kind of multi-layer nano composite phase-change thin-film material and its preparation method and application | |
| CN104795494A (en) | GeTe/Sb superlattice phase-change film material for high-speed phase change memories and preparation method of file material | |
| CN101976725A (en) | SiO2/Sb80Te20 nano composite multi-layered phase-change film material with adjustable crystallization temperature and preparation method thereof | |
| CN104681720A (en) | SbSe-based nitrogen-doped nano-film material for PCRAM and preparation method for SbSe-based nitrogen-doped nano-film material | |
| CN108447986A (en) | A kind of preparation method of Si/Sb class superlattices phase change film materials for phase transition storage | |
| CN106410025A (en) | Oxygen-doped Sb nanometer phase change thin-film materials and preparation method thereof and application thereof | |
| CN102354729A (en) | Nanometer multi-layer composite phase-change film material for multilevel storage phase-change memory, as well as preparation and application thereof | |
| CN105870323A (en) | Composite phase change film material and preparation method thereof | |
| CN103378289B (en) | A kind of multi-layer nano composite film material for high-speed and high-density phase transition storage and preparation method thereof | |
| CN104659209A (en) | GeSb-based nitrogen-doped nano-film material for phase change memory and preparation method of nano-film material | |
| CN102800807A (en) | Oxygen-doped nanometre thin-film material for low-power-consumption and high-reliability phase change memory as well as preparation and application of thin-film material | |
| CN104393171A (en) | Nitrogen-doped nano-film material applied to quick high-stability phase transition storage and preparation method | |
| CN105304815B (en) | A kind of multi-layer nano composite film material and preparation method thereof for low power consumption phase changing memory | |
| CN107342362A (en) | A kind of Mg Sb Se nano phase change films and preparation method thereof | |
| CN109686840A (en) | Flexible multi-layered compound GeTe/ZnSb phase change film material of one kind and preparation method thereof | |
| CN106185800B (en) | A kind of GeTe/Ge classes superlattices nano phase change thin-film material and its preparation method and application | |
| CN109904310B (en) | Environment-friendly Sn-Sb-Ti nano composite phase change film and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170922 |