CN105514269A - Nano composite stacked phase-change film and preparation method and application thereof - Google Patents

Nano composite stacked phase-change film and preparation method and application thereof Download PDF

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CN105514269A
CN105514269A CN201510958558.5A CN201510958558A CN105514269A CN 105514269 A CN105514269 A CN 105514269A CN 201510958558 A CN201510958558 A CN 201510958558A CN 105514269 A CN105514269 A CN 105514269A
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film
thin film
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sputtering
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CN105514269B (en
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翟继卫
何子芳
吴卫华
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Tongji University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors

Abstract

The invention relates to a nano composite stacked phase-change film and a preparation method and an application thereof. Ge2Sb2Te5 films and ZnSb films are arranged alternately into a stacked film unit, wherein each Ge2Sb2Te5 film is 15-35nm thick, and each ZnSb film is 15-35nm thick. The stacked film unit formed by alternate arrangement is of a one-layer structure, and can be applied to a phase-change memory with multistage storage characteristic. Compared with the prior art, the nano composite stacked phase-change film has two stable phase change processes and three storage modes, and the storage density of PCRAM can be greatly improved; and the crystallization temperature and the ten-year data holding temperature are high, and the thermal stability of PCRAM can be greatly improved.

Description

Nano combined stacking phase-change thin film and its preparation method and application
Technical field
The present invention relates to microelectronics technology material, especially relate to a kind of nano combined stacking phase-change thin film and its preparation method and application.
Background technology
Phase change memory technology is a kind of new ideas memory technology of in recent years just rising, it is the novel non-volatility memorizer of one utilizing material crystalline state-amorphous state conversion thus realize information storage, have broad application prospects, be considered to promise to be main flow memory of future generation most.With replace some other future compared with the candidate technologies of flash memory, PCRAM have high read that fast reading is write, high reliability, low-power consumption, the life-span is long, circulate erasable number of times advantages of higher, COMS technique (S.LaiandT.Lowrey:IEDMTech.Dig. can be compatible with simultaneously, 2000, p.243), technology realizes difficulty and industry cost is lower, and can realize dynamic data attemper.In addition, PCRAM memory technology has greater advantages in size reduces, and has anti-strong motion, radiation resistance, has extremely important application prospect in field of aerospace.
Ge 2sb 2te 5be the phase-change storage material of current most study, there is good combination property.Although there is no too large shortcoming, there is much places (Seo, Jae-Hee etc., JournalofAppliedPhysics, 108,064515,2010) with improving to be improved.Such as, Ge 2sb 2te 5film only has high and low two Resistance states, " 0 " and " 1 " on counterlogic, the space that storage density is improved; Secondly, Ge 2sb 2te 5the thermal stability of film is not very high, and crystallization temperature is at about 150 DEG C, and ten annual datas keep temperature to be probably 85 DEG C, and can not meet the requirement of the industry such as automotive electronics and Aero-Space, therefore its thermal stability has to be hoisted.ZnSb has very high thermal stability, by itself and traditional Ge 2sb 2te 5carry out compound by stacking mode, greatly can improve the thermal stability of material monolithic.In addition, the greatest differences of the crystallization temperature of bi-material can also be utilized, make the two respective independent crystallization in composite stack film, realize multi-level phase change, thus improve storage density (Gyanathan, A. etc., JournalofAppliedPhysics, 110,124517,2011).
Chinese patent CN201210560124 discloses a kind of multi-layer nano composite film material for high-speed and high-density phase transition storage and preparation method thereof, is SbSe/Ga30Sb70 multilayer nanocomposite phase transition film, by SbSe film and Ga 30sb 70film is alternately arranged into multi-layer film structure, and gross thickness is probably 50nm, adopts magnetron sputtering method to prepare, phase transition storage can be made to realize dynamic data attemper.Compared with this patent, the polymorphism characteristic of this patent is more obvious, " 0 " between state and one state high low-resistance difference be 10 3, between one state and " 2 " state, height resistance difference also reaches 10 2, higher high low-resistance difference is conducive to the signal to noise ratio improving PCRAM, thus improves the reliability of storage information.And Ge in this patent 2sb 2te 5the first time phase transformation of/ZnSb film reaches 100 DEG C with the temperature difference of second time phase transformation, and this has very large benefit to the reliability of device dynamic data attemper.
Chinese patent CN103762308A discloses Polymorphic gallium antimony-stannic selenide multi-layer nano composite phase-change material and Synthesis and applications thereof, by SnSe 2film and Ga 30sb 70film is alternately arranged into multi-layer film structure, wherein SnSe 2the thickness of film is 5 ~ 35nm, Ga 30sb 70the thickness of film is 5 ~ 35nm; Ga 30sb 70/ SnSe 2the gross thickness of multilayer nanocomposite phase transition film is 50-70nm, adopts magnetron sputtering method to prepare, can be applied in the high-density phase-change memory with polymorphic performance.Compared with this patent, this patent mainly contains following advantage: 1. crystallization rate is fast.Based on [Ge 2sb 2te 5(35nm)/ZnSb (15nm)] 1device can realize reversible transition under the pulsewidth of 100ns, and based on [Ga 30sb 70(25nm)/SnSe 2(25nm)] 1device can only realize reversible transition under the pulsewidth of 1000ns; 2. power consumption is little.Based on [Ge 2sb 2te 5(35nm)/ZnSb (15nm)] 1device twice SET voltage be respectively 2.7V, 3.8V; And based on [Ga 30sb 70(25nm)/SnSe 2(25nm)] 1device twice SET voltage be then respectively 8V, 9V.Threshold voltage is less, illustrates that the power consumption of device is less.
Chinese patent CN102354729A discloses the Ge for dynamic data attemper phase transition storage 2sb 2te 5/ Ga 30sb 70nanometer multilayer composite phase-change film.Ge of the present invention 2sb 2te 5/ Ga 30sb 70individual layer Ge in nanometer multilayer composite phase-change thin-film material 2sb 2te 5film and individual layer Ga 30sb 70film is alternately arranged into multi-layer film structure, and individual layer Ge 2sb 2te 5the thickness of film and individual layer Ga 30sb 70the thickness of film is 10 ~ 133nm; Described Ge 2sb 2te 5/ Ga 30sb 70the gross thickness of nanometer multilayer composite phase-change thin-film material is 90-200nm.Compared with this patent, the advantage of this patent is: with Ga 30sb 70compare, ZnSb has higher amorphous state resistance, thus makes Ge 2sb 2te 5the high low-resistance difference of/ZnSb film increases, and the high low-resistance difference that higher resistance difference is higher is conducive to the signal to noise ratio improving PCRAM.The stacked structure of this patent only has one-period, and technique compares Ge 2sb 2te 5/ Ga 30sb 70nanometer multilayer composite phase-change film is more simple, should use cost lower.
Summary of the invention
Object of the present invention is exactly provide a kind of to overcome defect that above-mentioned prior art exists can improve packing density of phase change storage and improve the Ge of thermal stability 2sb 2te 5nano combined stacking phase-change thin film of/ZnSb and its preparation method and application.
Object of the present invention can be achieved through the following technical solutions:
Nano combined stacking phase-change thin film, by Ge 2sb 2te 5film is alternately arranged into stacked film unit with ZnSb film, described Ge 2sb 2te 5the thickness of film is 15-35nm, and the thickness of described ZnSb film is 15-35nm, and being alternately arranged into stacked film unit is a Rotating fields.
Preferably, Ge 2sb 2te 5the thickness of film is the thickness of 25-35nm, ZnSb film is 25-35nm.
Preferably, Ge 2sb 2te 5the Thickness Ratio of the nano combined stacking phase-change thin film of/ZnSb is 15:35,25:25 or 35:15.
Optimum, Ge 2sb 2te 5the Thickness Ratio of the nano combined stacking phase-change thin film of/ZnSb is 35:15.
The thickness of stacked film unit is 50-70nm.
The preparation method of nano combined stacking phase-change thin film, adopts following steps:
(1) SiO is cleaned 2/ Si (100) substrate surface, the back side, remove dust granule, organic and inorganic impurity;
(2) sputtering target material is installed, setting radio-frequency power, gas flow and sputtering pressure;
(3) room temperature magnetically controlled sputter method is adopted to prepare Ge 2sb 2te 5the nano combined stacking phase-change thin film of/ZnSb, specifically adopts following steps:
(3-1) substrate is rotated to Ge 2sb 2te 5target position, opens Ge 2sb 2te 5radio-frequency power supply, with Ar gas for sputter gas sputters Ge 2sb 2te 5target, Ge 2sb 2te 5after thin film sputtering completes, close Ge 2sb 2te 5radio-frequency power supply;
(3-2) substrate is rotated to ZnSb target position, open the radio-frequency power supply of ZnSb, with Ar gas for sputter gas, sputtering ZnSb target, after ZnSb thin film sputtering completes, closes the radio-frequency power supply of ZnSb.
Preferably, described Ge 2sb 2te 5the purity of/ZnSb target is all at atomic percent more than 99.999%, and background vacuum is not more than 2x10 -4pa, the purity of described Ar gas is percent by volume more than 99.999%.
Preferably, described Ge 2sb 2te 5all adopt radio-frequency power supply with ZnSb target as sputter, and sputtering power is 15-25W, optimum is 20W.
Preferably, the gas flow of described Ar gas is 25-35SCCM, and optimum is 30SCCM; Sputtering pressure is 0.15-0.25Pa, and optimum is 0.2Pa.
Described individual layer Ge 2sb 2te 5the thickness of film and individual layer ZnSb film is regulated and controled by sputtering time, Ge 2sb 2te 5sputtering time be the sputtering rate of 250s, ZnSb be 238s.
Nano combined stacking phase-change thin film can application in the phase transition storage with dynamic data attemper feature.
Compared with prior art, the Ge for preparing of the present invention 2sb 2te 5the nano combined stacking phase-change thin film of/ZnSb has the feature of multi-level phase change.Single Ge 2sb 2te 5, ZnSb phase-change material only has amorphous state and the Resistance states of crystalline state two for storing.Ge of the present invention 2sb 2te 5there are two transformation temperatures in/ZnSb multi-layer compound film system, respectively corresponding bi-material independence transformation temperature, i.e. Ge 2sb 2te 5after phase transformation completes, the resistance of thin film system becomes interlaminated resistance state from high-impedance state, then low resistance state is become from intermediate state after ZnSb phase transformation completes, " 00 ", " 01 " and " 11 " on three Resistance states difference counterlogics, so can add an interlaminated resistance state on the basis of tradition two Resistance states, the storage density of phase transition storage can be improved greatly.ZnSb has very high thermal stability, by itself and traditional Ge 2sb 2te 5carry out compound by stacking mode, greatly can improve the thermal stability of material monolithic, and then greatly can improve the thermal stability of PCRAM.The polymorphism characteristic of this patent is obvious, " 0 " between state and one state high low-resistance difference be 10 3, between one state and " 2 " state, height resistance difference also reaches 10 2, higher high low-resistance difference is conducive to the signal to noise ratio improving PCRAM, thus improves the reliability of storage information.
Accompanying drawing explanation
Fig. 1 is Ge 2sb 2te 5the nano combined resistance of stacking phase-change thin film of/ZnSb and the relation curve of temperature;
Fig. 2 is [Ge 2sb 2te 5(35nm)/ZnSb (15nm)] 1the out-of-service time of nano combined stacking phase-change thin film and the corresponding relation curve of inverse temperature;
Fig. 3 is based on [Ge 2sb 2te 5(35nm)/ZnSb (15nm)] 1the I-V characteristic curve of film PCRAM device cell.
Fig. 4 is based on [Ge 2sb 2te 5(35nm)/ZnSb (15nm)] 1the R-V characteristic curve of film PCRAM device cell.
Embodiment
Below in conjunction with accompanying drawing and specific instantiation, embodiments of the present invention are described, by this specification, those skilled in the art can say that the content disclosed understands other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on without viewpoint and application, carries out various modification or change not deviating under spirit of the present invention.
Embodiment 1
The Ge prepared in the present embodiment 2sb 2te 5the nano combined stacking phase-change thin film gross thickness of/ZnSb is 50nm, and general structure is [Ge 2sb 2te 5(a)/ZnSb (b)] x, concrete structure is [Ge 2sb 2te 5(15nm)/ZnSb (35nm)] 1, [Ge 2sb 2te 5(25nm)/ZnSb (25nm)] 1, [Ge 2sb 2te 5(35nm)/ZnSb (15nm)] 1.
1. clean SiO 2//Si (100) substrate surface, the back side, remove dust granule, organic and inorganic impurity:
A substrate is placed in ethanolic solution by (), with ultrasonic cleaning 15 minutes, remove substrate surface dust granule and inorganic impurity;
B substrate is placed in acetone soln by (), with ultrasonic cleaning 15 minutes, remove substrate surface organic impurities;
C substrate is placed in deionized water by (), with ultrasonic cleaning 15 minutes, and clean surface again;
D () takes out substrate, do with pure Ar air-blowing, stand-by.
2. adopt sputtering method preparation [Ge 2sb 2te 5(a)/ZnSb (b)] the front preparation of x film
A () puts Ge 2sb 2te 5with ZnSb alloy target material, install substrate, then sealed vacuum room
B gas flowmeter is opened 5min by (), be then placed in valve control state, open mechanical pump and vacuumize, and when vacuum reaches 5Pa or be following, starts molecular pump, is evacuated to 2x10 -4below Pa.
C () setting radio-frequency power is 20W.
D () uses high-purity Ar gas as sputter gas, gas flow is 30SCCM, and sputtering pressure is 0.2Pa.
3. carry out plated film by plated film monitoring program, required sputtering thickness, can be changed by sputtering time, wherein Ge 2sb 2te 5the sputtering rate of target is the sputtering rate of 0.25nm/s, ZnSb target is 0.21nm/s
A substrate is rotated to Ge by () 2sb 2te 5target position, opens Ge 2sb 2te 5radio-frequency power supply, start to sputter Ge 2sb 2te 5film, [Ge 2sb 2te 5(15nm)/ZnSb (35nm)] 1, [Ge 2sb 2te 5(25nm)/ZnSb (25nm)] 1, [Ge 2sb 2te 5(35nm)/ZnSb (15nm)] 1duration is respectively 75s, 120s and 175s, Ge 2sb 2te 5after thin film sputtering completes, close Ge 2sb 2te 5radio-frequency power supply.
B substrate is rotated to ZnSb target position by (), open the radio-frequency power supply of ZnSb, starts to sputter ZnSb film, [Ge 2sb 2te 5(15nm)/ZnSb (35nm)] 1, [Ge 2sb 2te 5(25nm)/ZnSb (25nm)] 1, [Ge 2sb 2te 5(35nm)/ZnSb (15nm)] 1duration is respectively 167s, 119s and 71s, after ZnSb thin film sputtering completes, closes the radio-frequency power supply of ZnSb.
Comparative example 1
The individual layer Ge prepared in this comparative example 2sb 2te 5phase-change thin film, gross thickness is 50nm.
1. clean SiO 2/ Si (100) substrate surface, the back side, remove dust granule, organic and inorganic impurity:
A substrate is placed in ethanolic solution by (), with ultrasonic cleaning 15 minutes, remove substrate surface dust granule and inorganic impurity;
B substrate is placed in acetone soln by (), with ultrasonic cleaning 15 minutes, remove substrate surface organic impurities;
C substrate is placed in deionized water by (), with ultrasonic cleaning 15 minutes, and clean surface again;
D () takes out substrate, do with pure Ar air-blowing, stand-by.
2. adopt sputtering method to prepare individual layer Ge 2sb 2te 5prepare before phase-change thin film
A () puts Ge 2sb 2te 5alloy target material, installs substrate, then sealed vacuum room
B gas flowmeter is opened 5min by (), be then placed in valve control state, open mechanical pump and vacuumize, and when vacuum reaches 5Pa or be following, starts molecular pump, is evacuated to 2x10 -4below Pa.
C () setting radio-frequency power is 20W.
D () uses high-purity Ar gas as sputter gas, gas flow is 30SCCM, and sputtering pressure is 0.2Pa.
3. carry out plated film by plated film monitoring program, required sputtering thickness, can be changed by sputtering time, wherein Ge 2sb 2te 5the sputtering rate of target is 0.25nm/s.Substrate is rotated to Ge 2sb 2te 5target position, opens Ge 2sb 2te 5radio-frequency power supply, start to sputter Ge 2sb 2te 5film, duration 250s, Ge 2sb 2te 5after thin film sputtering completes, close Ge 2sb 2te 5radio-frequency power supply.
Comparative example 2
The individual layer ZnSb phase-change thin film prepared in this comparative example, gross thickness is 50nm.
1. clean SiO 2/ Si (100) substrate surface, the back side, remove dust granule, organic and inorganic impurity:
A substrate is placed in ethanolic solution by (), with ultrasonic cleaning 15 minutes, remove substrate surface dust granule and inorganic impurity;
B substrate is placed in acetone soln by (), with ultrasonic cleaning 15 minutes, remove substrate surface organic impurities;
C substrate is placed in deionized water by (), with ultrasonic cleaning 15 minutes, and clean surface again;
D () takes out substrate, do with pure Ar air-blowing, stand-by.
2. prepare before adopting sputtering method to prepare individual layer ZnSb phase-change thin film
A () puts ZnSb alloy target material, install substrate, then sealed vacuum room
B gas flowmeter is opened 5min by (), be then placed in valve control state, open mechanical pump and vacuumize, and when vacuum reaches 5Pa or be following, starts molecular pump, is evacuated to 2x10 -4below Pa.
C () setting radio-frequency power is 20W.
D () uses high-purity Ar gas as sputter gas, gas flow is 30SCCM, and sputtering pressure is 0.2Pa.
3. carry out plated film by plated film monitoring program, required sputtering thickness, can be changed by sputtering time, wherein the sputtering rate of ZnSb target is 0.21nm/s.Substrate is rotated to ZnSb target position, open the radio-frequency power supply of ZnSb, start to sputter ZnSb film, after duration 238s, ZnSb thin film sputtering completes, close the radio-frequency power supply of ZnSb.
By [the Ge of above-described embodiment 1 2sb 2te 5(a)/ZnSb (b)] the nano combined stacking phase-change thin film of x and comparative example 1 and 2 test, and obtains the resistance of film and the relation curve of temperature, as shown in Figure 1; By [the Ge of above-described embodiment 1 2sb 2te 5(a)/ZnSb (b)] the nano combined stacking phase-change thin film of x tests, and obtains Ge 2sb 2te 5the out-of-service time of the nano combined stacking phase change film material of/ZnSb and the corresponding relation curve of inverse temperature, as shown in Figure 2; By [the Ge of above-described embodiment 1 gained 2sb 2te 5(35nm)/ZnSb (15nm)] 1film preparation becomes phase change memory device and tests, and obtains the I-V characteristic curve of phase change memory device, as shown in Figure 3; By [the Ge of above-described embodiment 1 gained 2sb 2te 5(35nm)/ZnSb (15nm)] 1film preparation becomes phase change memory device and tests, and obtains the R-V characteristic curve of phase change memory device, as shown in Figure 4.
The testing result of above-mentioned Fig. 1-4 is as follows:
Fig. 1 is Ge of the present invention 2sb 2te 5the resistance variation with temperature of the nano combined stacking phase-change thin film of/ZnSb, in test, programming rate is 10 DEG C/min.As seen from Figure 1, individual layer Ge 2sb 2te 5(GST) and ZnSb film all only have high and low two Resistance states, and at MULTILAYER COMPOSITE phase-change thin film [Ge 2sb 2te 5(15nm)/ZnSb (35nm)] 1, [Ge 2sb 2te 5(25nm)/ZnSb (25nm)] 1, [Ge 2sb 2te 5(35nm)/ZnSb (15nm)] 1in all observed high, medium and low three Resistance states, show that it can as dynamic data attemper phase-change material.And, with individual layer Ge 2sb 2te 5thin-film material is compared, and by carrying out compound with ZnSb, larger improves Ge 2sb 2te 5the crystallization temperature of/ZnSb stacked film, makes film be provided with better thermal stability.
Fig. 2 is [Ge in the present invention 2sb 2te 5(35nm)/ZnSb (15nm)] 1the out-of-service time of film and the corresponding relation curve of inverse temperature.According to one of unified judgment criteria in the industry, temperature corresponding when utilizing phase-change material data to be kept 10 years is to pass judgment on the data holding ability of material.Can find out, by Ge 2sb 2te 5carry out compound with ZnSb by stacking mode, crystallization activation energy, ten annual datas keep temperature all to have larger lifting.Traditional Ge 2sb 2te 5the crystallization activation energy of thin-film material and data keep the temperature of 10 years to be respectively 2.34eV and 85 DEG C.The present invention [Ge 2sb 2te 5(35nm)/ZnSb (15nm)] 1the crystallization activation energy of twice crystallization of nano combined stacking phase-change thin film is all greater than 2.34eV, data keep the temperature of 10 years to be also all greater than 85 DEG C, and thermal stability compares Ge 2sb 2te 5more excellent.
Fig. 3 and Fig. 4 is based on the present invention [Ge 2sb 2te 5(35nm)/ZnSb (15nm)] 1i-V and the R-V characteristic curve of the phase transition storage of stacking composite phase-change thin-film material.In I-V and R-V characteristic curve, crystallization process all shows obvious multi-level phase change process, can prove [Ge 2sb 2te 5(35nm)/ZnSb (15nm)] 1polymorphic performance feasible in practical operation.As seen from the figure, to [the Ge being in high-impedance state 2sb 2te 5(35nm)/ZnSb (15nm)] 1the phase transition storage of nano phase change thin-film material applies current impulse, when voltage reaches 4.5V, realizes first time phase transformation, when voltage reaches 6.5V, realizes second time phase transformation.Wherein the first phase change resistor ratio is close to 10 times, and the resistance variations of the second phase transformation reaches 100 times, can meet the on-off ratio requirement of phase change memory.
Known [the Ge of the present invention of complex chart 1-4 8sb 92(a) Ga 30sb 70(b)] the nano combined stacking phase-change thin film of x has high storage density, the advantages such as high thermal stability.
Embodiment 2
Nano combined stacking phase-change thin film, by Ge 2sb 2te 5film is alternately arranged into stacked film unit with ZnSb film, Ge 2sb 2te 5the thickness of film is the thickness of 25nm, ZnSb film is 25nm, and being alternately arranged into stacked film unit is a Rotating fields, and the thickness of unit is 50nm.
The preparation method of nano combined stacking phase-change thin film, adopts following steps:
(1) SiO is cleaned 2/ Si (100) substrate surface, the back side, remove dust granule, organic and inorganic impurity;
(2) sputtering target material is installed, setting radio-frequency power, gas flow and sputtering pressure;
(3) room temperature magnetically controlled sputter method is adopted to prepare Ge 2sb 2te 5the nano combined stacking phase-change thin film of/ZnSb, specifically adopts following steps:
(3-1) substrate is rotated to Ge 2sb 2te 5target position, opens Ge 2sb 2te 5radio-frequency power supply, with Ar gas for sputter gas sputters Ge 2sb 2te 5target, Ge 2sb 2te 5after thin film sputtering completes, close Ge 2sb 2te 5radio-frequency power supply;
(3-2) substrate is rotated to ZnSb target position, open the radio-frequency power supply of ZnSb, with Ar gas for sputter gas, sputtering ZnSb target, after ZnSb thin film sputtering completes, closes the radio-frequency power supply of ZnSb.
Above-mentioned Ge 2sb 2te 5the purity of/ZnSb target is all at atomic percent more than 99.999%, and background vacuum is not more than 2x10 -4the purity of Pa, Ar gas is percent by volume more than 99.999%.Ge 2sb 2te 5all adopt radio-frequency power supply with ZnSb target as sputter, sputtering power is 15W, and the gas flow of the Ar gas of use is 25SCCM, and sputtering pressure is 0.15Pa, individual layer Ge 2sb 2te 5the thickness of film and individual layer ZnSb film is regulated and controled by sputtering time, Ge 2sb 2te 5sputtering time be the sputtering rate of 250s, ZnSb be 238s.The nano combined stacking phase-change thin film prepared can application in the phase transition storage with dynamic data attemper feature.
Embodiment 3
Nano combined stacking phase-change thin film, by Ge 2sb 2te 5film is alternately arranged into stacked film unit with ZnSb film, Ge 2sb 2te 5the thickness of film is the thickness of 35nm, ZnSb film is 35nm, and being alternately arranged into stacked film unit is a Rotating fields.The thickness of stacked film unit is 50nm.
The preparation method of nano combined stacking phase-change thin film, adopts following steps:
(1) SiO is cleaned 2/ Si (100) substrate surface, the back side, remove dust granule, organic and inorganic impurity;
(2) sputtering target material is installed, setting radio-frequency power, gas flow and sputtering pressure;
(3) room temperature magnetically controlled sputter method is adopted to prepare Ge 2sb 2te 5the nano combined stacking phase-change thin film of/ZnSb, specifically adopts following steps:
(3-1) substrate is rotated to Ge 2sb 2te 5target position, opens Ge 2sb 2te 5radio-frequency power supply, with Ar gas for sputter gas sputters Ge 2sb 2te 5target, Ge 2sb 2te 5after thin film sputtering completes, close Ge 2sb 2te 5radio-frequency power supply;
(3-2) substrate is rotated to ZnSb target position, open the radio-frequency power supply of ZnSb, with Ar gas for sputter gas, sputtering ZnSb target, after ZnSb thin film sputtering completes, closes the radio-frequency power supply of ZnSb.
Above-mentioned Ge 2sb 2te 5the purity of/ZnSb target is all at atomic percent more than 99.999%, and background vacuum is not more than 2x10 -4the purity of Pa, Ar gas is percent by volume more than 99.999%.Ge 2sb 2te 5all adopt radio-frequency power supply with ZnSb target as sputter, sputtering power is 20W, and the gas flow of the Ar gas of use is 30SCCM, and sputtering pressure is 0.25Pa, individual layer Ge 2sb 2te 5the thickness of film and individual layer ZnSb film is regulated and controled by sputtering time, Ge 2sb 2te 5sputtering time be the sputtering rate of 250s, ZnSb be 238s.The nano combined stacking phase-change thin film prepared can application in the phase transition storage with dynamic data attemper feature.
Embodiment 4
Nano combined stacking phase-change thin film, by Ge 2sb 2te 5film is alternately arranged into stacked film unit with ZnSb film, Ge 2sb 2te 5the thickness of film is the thickness of 35nm, ZnSb film is 35nm, and being alternately arranged into stacked film unit is a Rotating fields.The thickness of stacked film unit is 70nm.
The preparation method of nano combined stacking phase-change thin film, adopts following steps:
(1) SiO is cleaned 2/ Si (100) substrate surface, the back side, remove dust granule, organic and inorganic impurity;
(2) sputtering target material is installed, setting radio-frequency power, gas flow and sputtering pressure;
(3) room temperature magnetically controlled sputter method is adopted to prepare Ge 2sb 2te 5the nano combined stacking phase-change thin film of/ZnSb, specifically adopts following steps:
(3-1) substrate is rotated to Ge 2sb 2te 5target position, opens Ge 2sb 2te 5radio-frequency power supply, with Ar gas for sputter gas sputters Ge 2sb 2te 5target, Ge 2sb 2te 5after thin film sputtering completes, close Ge 2sb 2te 5radio-frequency power supply;
(3-2) substrate is rotated to ZnSb target position, open the radio-frequency power supply of ZnSb, with Ar gas for sputter gas, sputtering ZnSb target, after ZnSb thin film sputtering completes, closes the radio-frequency power supply of ZnSb.
Above-mentioned Ge 2sb 2te 5the purity of/ZnSb target is all at atomic percent more than 99.999%, and background vacuum is not more than 2x10 -4the purity of Pa, Ar gas is percent by volume more than 99.999%.Ge 2sb 2te 5all adopt radio-frequency power supply with ZnSb target as sputter, sputtering power is 25W, and the gas flow of the Ar gas of use is 35SCCM, and sputtering pressure is 0.25Pa, individual layer Ge 2sb 2te 5the thickness of film and individual layer ZnSb film is regulated and controled by sputtering time, Ge 2sb 2te 5sputtering time be the sputtering rate of 250s, ZnSb be 238s.The nano combined stacking phase-change thin film prepared can application in the phase transition storage with dynamic data attemper feature.
Above-described embodiment is exemplary illustration principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art and usually know that the knowledgeable modifies or changes not departing from all equivalences completed under the present invention says the spirit of announcement and technological thought, claim of the present invention still should be had to contain.

Claims (9)

1. nano combined stacking phase-change thin film, is characterized in that, this phase-change thin film is by Ge 2sb 2te 5film is alternately arranged into stacked film unit with ZnSb film, described Ge 2sb 2te 5the thickness of film is 15-35nm, and the thickness of described ZnSb film is 15-35nm, and being alternately arranged into stacked film unit is a Rotating fields.
2. nano combined stacking phase-change thin film according to claim 1, is characterized in that, described Ge 2sb 2te 5the thickness of film is preferably 25-35nm, and the thickness of described ZnSb film is preferably 25-35nm.
3. nano combined stacking phase-change thin film according to claim 1, is characterized in that, the thickness of described stacked film unit is 50-70nm.
4. the preparation method of nano combined stacking phase-change thin film as claimed in claim 1, is characterized in that, the method adopts following steps:
(1) SiO is cleaned 2/ Si (100) substrate surface, the back side, remove dust granule, organic and inorganic impurity;
(2) sputtering target material is installed, setting radio-frequency power, gas flow and sputtering pressure;
(3) room temperature magnetically controlled sputter method is adopted to prepare Ge 2sb 2te 5the nano combined stacking phase-change thin film of/ZnSb.
5. the preparation method of nano combined stacking phase-change thin film according to claim 4, is characterized in that, step (3) specifically adopts following steps:
(3-1) substrate is rotated to Ge 2sb 2te 5target position, opens Ge 2sb 2te 5radio-frequency power supply, with Ar gas for sputter gas sputters Ge 2sb 2te 5target, Ar throughput is 30SCCM, Ge 2sb 2te 5sputtering rate be 0.2nm/s, Ge 2sb 2te 5after thin film sputtering completes, close Ge 2sb 2te 5radio-frequency power supply;
(3-2) substrate is rotated to ZnSb target position, open the radio-frequency power supply of ZnSb, with Ar gas for sputter gas, sputtering ZnSb target, Ar throughput is the sputtering rate of 30SCCM, ZnSb is 0.21nm/s, after ZnSb thin film sputtering completes, close the radio-frequency power supply of ZnSb.
6. the preparation method of the nano combined stacking phase-change thin film according to claim 4 or 5, is characterized in that, Ge 2sb 2te 5with the purity of ZnSb target all at atomic percent more than 99.999%.
7. the preparation method of nano combined stacking phase-change thin film according to claim 5, is characterized in that, the purity of Ar gas is percent by volume more than 99.999%.
8. the preparation method of nano combined stacking phase-change thin film according to claim 5, is characterized in that, Ge 2sb 2te 5all adopt radio-frequency power supply with ZnSb target as sputter, sputtering power is 15-25W; The gas flow of Ar gas is 25-35SCCM; Sputtering pressure is 0.15-0.25Pa, and vacuum degree is not more than 1x10 -4pa.
9. the application of nano combined stacking phase-change thin film as claimed in claim 1 in the phase transition storage with dynamic data attemper feature.
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