CN108258114B - Preparation method of GeTe/Sb superlattice phase-change thin-film material for high-speed phase-change memory - Google Patents
Preparation method of GeTe/Sb superlattice phase-change thin-film material for high-speed phase-change memory Download PDFInfo
- Publication number
- CN108258114B CN108258114B CN201810155240.7A CN201810155240A CN108258114B CN 108258114 B CN108258114 B CN 108258114B CN 201810155240 A CN201810155240 A CN 201810155240A CN 108258114 B CN108258114 B CN 108258114B
- Authority
- CN
- China
- Prior art keywords
- gete
- layer
- sputtering
- phase
- change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention discloses a preparation method of a GeTe/Sb superlattice phase-change thin-film material for a high-speed phase-change memory, wherein the phase-change thin-film material is of a multilayer composite film structure and is formed by alternately depositing and compounding GeTe layers and Sb layers, the GeTe layer and the Sb layer are used as an alternate period, and the GeTe layer in the later alternate period is deposited above the Sb layer in the former alternate period. Experiments prove that the time for the reflectivity of the GeTe/Sb superlattice phase-change thin film material to change suddenly is about 5.3ns, and a single layer of Ge is2Sb2Te5The time for the reflectivity of the traditional phase change film material to change suddenly is about 39 ns; description and conventional Single layer Ge2Sb2Te5Compared with the phase change film material, the phase change film material has higher phase change speed, so that the phase change memory prepared by the phase change film material has higher operation speed, and the phase change memory is favorable for improving the information reading and writing speed of the PCRAM.
Description
The invention is a divisional application of an invention patent application with the application number of 201510205799.2 and the application date of 2015, 4 and 27, and the invention is named as a GeTe/Sb superlattice phase change thin film material for a high-speed phase change memory and a preparation method thereof.
Technical Field
The invention relates to a phase change thin film material in the field of microelectronics, in particular to a preparation method of a GeTe/Sb superlattice phase change thin film material for a high-speed phase change memory.
Background
Phase change memories (PCRAMs) are a new type of non-volatile memory that uses the large difference in resistance of materials in crystalline and amorphous states to achieve storage of information. When the phase-change material is in an amorphous state, the phase-change material has higher resistance, and when the phase-change material is in a crystalline state, the phase-change material has lower resistance, and the resistance difference between the two states reaches more than 2 orders of magnitude. Rapid transition of the phase change material between the two resistance states can be achieved by current-induced joule heating. PCRAM has the advantages of high stability, low power consumption, high memory density, compatibility with conventional CMOS processes, etc., and thus has received increasing attention from researchers and enterprises (Kun Ren et al, Applied Physics Letter, 2014, 104 (17): 173102). PCRAM is considered to be one of the most potential next-generation non-volatile memories with its great advantages.
The phase change material is the core of the PCRAM, and the performance of the phase change material directly determines various technical performances of the PCRAM. Ge (germanium) oxide2Sb2Te5Is a phase change memory material widely used at present, and has balanced performances in all aspects without great defects, but has a plurality of places to be improved and enhanced (Zhou Xilin, et al, Acta Materialia, 2013, 61 (19): 7324 and 7333). For example, Ge2Sb2Te5The crystallization mechanism of the film mainly based on nucleation leads the phase change speed of the film to be slower, and can not meet the information storage requirement of the future high-speed and big data era; second, Ge2Sb2Te5The thermal stability of the film is poor, the crystallization temperature is only about 160 ℃, the data can be kept for 10 years only at the environment temperature of 85 ℃, and the requirements of a semiconductor chip with high integration level in the future cannot be completely met.
As a technical improvement, Chinese patent documentsThe document CN 102347446B (application No. 201110331342.8) discloses a Ge-Sb-Te Ge-rich N-doped phase-change material for a phase-change memory and a preparation method thereof, wherein the Ge-Sb-Te Ge-rich N-doped phase-change material mainly comprises germanium nitride and (GeTe)a（Sb2Te3）bComposite phase change materials. The phase-change material is prepared by adopting a magnetron sputtering method, and adopting Ge and (GeTe) on a silicon substrate or a silicon substrate after thermal oxidationa（Sb2Te3）bCo-sputtering two alloy targets, and introducing nitrogen in the sputtering process to obtain the phase-change material; or on a silicon substrate or a silicon substrate after thermal oxidation, adopting three targets of Ge, Sb and Te to carry out co-sputtering and introducing nitrogen in the sputtering process to obtain the phase-change material; or on a silicon substrate or a silicon substrate after thermal oxidation by using (GeTe)a（Sb2Te3）bAnd co-sputtering the alloy and the germanium nitride alloy target to obtain the phase-change material. However, the phase change material disclosed in this patent document is to increase Ge2Sb2Te5The crystallization speed of the material is necessarily reduced while the thermal stability is ensured, so that the Ge is prepared2Sb2Te5The inherently unfavorable phase change speed is further reduced, which is very disadvantageous for memory applications.
Superlattice-like phase change materials have received continuous attention in recent years, in contrast to the conventional single layer of Ge2Sb2Te5Compared with phase change materials, the superlattice-like structure has lower thermal conductivity, can reduce heat loss in the heating process, and reduces the overall thermal conductivity of the film, thereby improving the phase change speed.
For example, chinese patent document CN100470869 (application No. 028169379) discloses a multilayer material and method for phase change memory, which uses an insulating material tetraethylorthosilicate to phase change material Ge2Sb2Te5The phase change material, divided to form at least two phase change layers, can reduce the programming volume compared to a single layer of phase change material while providing sufficient thermal insulation. The phase-change material prepared by the method has lower power consumption.
Disclosure of Invention
The invention aims to solve the technical problem of providing a preparation method of a GeTe/Sb superlattice phase change thin film material for a high-speed phase change memory.
The technical scheme for realizing the aim of the invention is a preparation method of a GeTe/Sb superlattice phase-change thin-film material for a high-speed phase-change memory, the GeTe/Sb superlattice phase-change thin-film material is of a multilayer composite film structure and is formed by alternately depositing and compounding GeTe layers and Sb layers, wherein one GeTe layer and one Sb layer are used as an alternate period, and the GeTe layer of the next alternate period is deposited above the Sb layer of the previous alternate period. The film structure of the Ge Te/Sb superlattice phase change thin film material is represented by a general formula [ GeTe (a)/Sb (b)]xDenotes, where a is the thickness of the single GeTe layer, a =5 nm; b is the thickness of the single Sb layer, b =3nm, 4nm, 5nm, 6nm or 7 nm; x is the number of alternating periods of the GeTe and Sb layers, x =4, 5 or 6; wherein x =6 when b =3nm or 4 nm; b =5nm or 6nm, x = 5; b =7nm, x = 4;
the preparation method comprises the following steps:
preparing a substrate, and cleaning and drying the substrate for later use.
Secondly, preparing magnetron sputtering, namely placing the substrate to be sputtered cleaned in the step I on a base support, respectively installing GeTe alloy and Sb with the atomic percentage of Ge to Te =1 to 1 as sputtering target materials in a magnetron radio frequency sputtering target, and vacuumizing a sputtering chamber of a magnetron sputtering coating system until the vacuum degree in the chamber reaches 1 multiplied by 10-4 Pa, using high-purity argon as sputtering gas, wherein the volume percentage of the high-purity argon is more than or equal to 99.999 percent; the Ar gas flow is 30SCCM, the argon gas sputtering pressure is 0.3Pa, and the sputtering power of the radio frequency power supply is set to be 30W.
③ preparation of [ GeTe (a)/Sb (b)]xMultilayer composite film:
a. firstly, the surfaces of a GeTe alloy target material and an Sb target material are cleaned.
b. After the surface of the target material is cleaned, SiO to be sputtered2the/Si (100) substrate rotates to the GeTe alloy target position, the radio frequency power supply on the GeTe alloy target position is turned on, the sputtering of the GeTe layer is started, the sputtering rate of the GeTe layer is 1.44s/nm, and after the sputtering of the GeTe layer is finished, the applied GeTe alloy target position is turned offA radio frequency power source.
c. And (3) rotating the substrate sputtered with the GeTe layer to an Sb target position, starting a radio frequency power supply on the Sb target position, wherein the sputtering rate of the Sb layer is 4s/nm, and obtaining the Sb layer after the sputtering is finished.
d. And (c) repeating the steps b and c for x-1 times, and finishing the sputtering to obtain the GeTe/Sb superlattice phase-change thin-film material for the high-speed phase-change memory.
The volume percentage of the high-purity argon in the second step is more than or equal to 99.999 percent, the flow of the Ar gas is 25-35 SCCM, and the sputtering pressure of the argon is 0.15-0.35 Pa.
In the step c, the sputtering rate of the GeTe layer is 1.44 s/nm; and step c, the sputtering rate of the Sb layer is 3-6 s/nm.
The invention has the positive effects that: (1) the GeTe/Sb superlattice phase-change thin-film material reduces the size of crystal grains by utilizing the clamping effect of a plurality of layers of interfaces in a superlattice-like structure, thereby shortening the crystallization time, inhibiting the crystallization, improving the thermal stability of the material and accelerating the phase-change speed; the reduction of the grain size shows that the volume change of the phase change film material in the phase change process is small, so that the phase change layer can be ensured to be effectively and well contacted with the electrode material, and the reliability of the PCRAM device is improved; on the other hand, the particularity of the superlattice-like structure of the GeTe/Sb superlattice phase change film material can block phonon transmission in the heating process, so that heat loss is reduced, the overall heat conductivity of the film is reduced, the heating efficiency is improved, and the power consumption is reduced.
(2) Experiments prove that the time for the reflectivity of the GeTe/Sb superlattice phase-change thin film material to change suddenly is about 5.3ns, and a single layer of Ge is2Sb2Te5The time for the reflectivity of the traditional phase change film material to change suddenly is about 39 ns; description and conventional Single layer Ge2Sb2Te5Compared with the phase change film material, the phase change film material has higher phase change speed, so that the phase change memory prepared by the phase change film material has higher operation speed, and the phase change memory is favorable for improving the information reading and writing speed of the PCRAM.
(3) The GeTe/Sb superlattice phase-change thin-film material alternately deposits GeTe layers and Sb layers through magnetron sputtering, namely the GeTe layers, the Sb layers, the GeTe layers and the Sb layers are … in sequence in the phase-change material, and the thickness of each layer is in a nanometer level.
(4) When the thin film material is prepared, the thickness of each GeTe layer and each Sb layer is controlled by controlling the sputtering time and the sputtering rate, and the thickness of each layer is accurately controlled; for example, after the sputtering rate is set, on the premise that the total thickness is fixed, for a film with a certain period number, the thickness of a GeTe and Sb single-layer film in the film period is adjusted by controlling the sputtering time of GeTe and Sb target materials, so that the GeTe/Sb superlattice phase change film material with a required structure is formed.
Drawings
FIG. 1 is a graph showing the relationship between the in-situ Resistance and the Temperature of the GeTe/Sb superlattice phase-change thin film materials of examples 1 to 5 and the phase-change thin film material of comparative example 1, wherein the Temperature on the abscissa is the Temperature and the Resistance on the ordinate is the Resistance;
FIG. 2 shows the GeTe/Sb superlattice phase-change thin film material and conventional Ge of example 32Sb2Te5The change relation of the reflectivity intensity of the film material along with time under the irradiation of nanosecond laser pulses is shown in the figure, wherein the horizontal coordinate time is time, and the vertical coordinate reflectivity intensity is the reflectivity intensity.
Detailed Description
(example 1)
The GeTe/Sb superlattice phase change thin film material for the high phase change memory has a multilayer composite film structure, and the thickness is 6-80 nm; the film is formed by alternately depositing and compounding GeTe layers and Sb layers, namely, the GeTe layers, the Sb layers, the GeTe layers and the Sb layers … are repeatedly and alternately arranged in the film.
One GeTe layer and one Sb layer are used as an alternate period, and the GeTe layer of the latter alternate period is deposited on the Sb layer of the former alternate period. The GeTe layer contains two elements of Ge and Te, and the atomic ratio of Ge to Te is 1: 1.
The film structure of the Ge Te/Sb superlattice phase-change thin-film material is represented by the general formula [ GeTe (a)/Sb (b)]xWherein a is the thickness of the single GeTe layer, and a is more than or equal to 1nm and less than or equal to 50 nm; b is a single layerThe thickness of the Sb layer, b is more than or equal to 1nm and less than or equal to 50 nm; x is the number of alternating cycles of the GeTe layer and the Sb layer, or one GeTe layer and one Sb layer form a group, and the thin film material consists of x groups of single GeTe layers and Sb layers; x is a positive integer, and (a + b) x is more than or equal to 6nm and less than or equal to 80 nm.
The film structure of the GeTe/Sb superlattice phase-change thin-film material of the embodiment is [ GeTe (5nm)/Sb (3nm)]6Namely, the thickness of each GeTe layer is 5nm, the thickness of each Sb layer is 3nm, the number of the alternating cycles of the GeTe layer and the Sb layer is 6, and the thickness of the GeSb superlattice phase-change thin-film material is 48 nm.
The GeTe/Sb superlattice phase-change film material is prepared by a magnetron sputtering method; the preparation method comprises the following steps:
preparation of a substrate. Selecting SiO with the size of 5mm multiplied by 5mm2Firstly, ultrasonically cleaning a substrate in acetone (with the purity of more than 99%) for 3-5 minutes by using an ultrasonic cleaning machine, and taking out the substrate and washing the substrate with deionized water after the cleaning is finished; then, ultrasonically cleaning the substrate in ethanol (the purity is more than 99%) for 3-5 minutes in an ultrasonic cleaning machine, taking out the substrate after cleaning, washing the substrate with deionized water, and then washing the substrate with high-purity N2Drying the surface and the back; and (3) conveying the dried substrate into an oven to dry water vapor, wherein the temperature of the oven is set to be 120 ℃, and the drying time is 20 minutes.
Preparing magnetron sputtering.
In a magnetron sputtering coating system (JGP-450 type), SiO to be sputtered prepared in the step (r)2Placing a/Si (100) substrate on a base support, respectively installing GeTe alloy (with the purity of 99.999 percent and the atomic percent of Ge: Te = 1: 1) and Sb (with the atomic percent of 99.999 percent) as sputtering target materials in a magnetron Radio Frequency (RF) sputtering target, and vacuumizing a sputtering chamber of a magnetron sputtering coating system until the vacuum degree in the chamber reaches 1 × 10-4 Pa。
High-purity argon gas (up to 99.999% by volume) is used as a sputtering gas, the flow rate of the Ar gas is set to 25 to 35SCCM (30 SCCM in the present embodiment), and the sputtering gas pressure is adjusted to 0.15 to 0.35Pa (0.3 Pa in the present embodiment).
The sputtering power of the RF power source is set to 25W to 35W (30W in this embodiment).
③ preparation of [ GeTe (a)/Sb (b)]xA multilayer composite film.
a. Firstly, the surfaces of a GeTe alloy target material and an Sb target material are cleaned. Rotating the hollow base support to a GeTe target position, turning on a direct-current power supply on the GeTe target position, setting sputtering time to be 100s, starting sputtering the surface of the GeTe alloy target material, and cleaning the surface of the GeTe alloy target material; after the surface of the GeTe alloy target material is cleaned, closing a radio frequency power supply applied to a GeTe alloy target position, rotating a hollow base to an Sb target position, starting the radio frequency power supply on the Sb target position, setting the sputtering time to be 100s, starting sputtering the surface of the Sb target material, cleaning the surface of the Sb target material, after the surface of the Sb target material is cleaned, closing a direct current power supply applied to the Sb target position, and enabling SiO to be sputtered2the/Si (100) substrate is rotated to a GeTe alloy target position.
b. Start sputtering the GeTe layer for the first alternating period: turning on a radio frequency power supply on a GeTe alloy target position, setting the sputtering rate of the GeTe layer to be 1.44s/nm and the sputtering time to be 7.2s, and obtaining a Ge layer with the thickness of 5nm after the sputtering is finished; and after the sputtering of the GeTe layer is finished, closing the radio frequency power supply applied to the GeTe alloy target position.
c. And (3) rotating the substrate sputtered with the GeTe layer to an Sb target position, starting a radio frequency power supply on the Sb target position, setting the sputtering rate of the Sb layer to be 4s/nm and the sputtering time to be 12s, and obtaining the Sb layer with the thickness of 3nm after the sputtering is finished.
d. Repeating the above steps b and c to obtain GeTe layer-Sb layer-GeTe layer-Sb layer … repeatedly and alternately deposited [ GeTe (a)/Sb (b)]xA multilayer composite film; this example was repeated 5 times.
(example 2)
The film structure of the GeTe/Sb superlattice phase-change thin-film material for the high-phase-change memory is [ GeTe (5nm)/Sb (4nm) ]]6Namely, the thickness of each GeTe layer is 5nm, the thickness of each Sb layer is 4nm, the number of the alternating cycles of the GeTe layer and the Sb layer is 6, and the thickness of the GeSb superlattice phase-change thin-film material is 54 nm.
The preparation process is otherwise the same as in example 1, except that: and step three, when the GeTe/Sb superlattice phase-change thin-film material is prepared by magnetron sputtering, the sputtering time of each Sb layer is 16 s.
(example 3)
The film structure of the GeTe/Sb superlattice phase-change thin-film material for the high-phase-change memory is [ GeTe (5nm)/Sb (5nm) ]]5Namely, the thickness of each GeTe layer is 5nm, the thickness of each Sb layer is 5nm, the number of the alternating cycles of the GeTe layer and the Sb layer is 5, and the thickness of the GeSb superlattice phase change thin film material is 50 nm.
The preparation process is otherwise the same as in example 1, except that: and step three, when the GeTe/Sb superlattice phase-change thin-film material is prepared by magnetron sputtering, the sputtering time of each Sb layer is 20 s.
(example 4)
The film structure of the GeTe/Sb superlattice phase-change thin-film material for the high-phase-change memory is [ GeTe (5nm)/Sb (6nm) ]]5Namely, the thickness of each GeTe layer is 5nm, the thickness of each Sb layer is 6nm, the number of the alternating cycles of the GeTe layer and the Sb layer is 5, and the thickness of the GeSb superlattice phase change thin film material is 55 nm.
The preparation process is otherwise the same as in example 1, except that: and step three, when the GeTe/Sb superlattice phase-change thin-film material is prepared by magnetron sputtering, the sputtering time of each Sb layer is 24 s.
(example 5)
The film structure of the GeTe/Sb superlattice phase-change thin-film material for the high-phase-change memory is [ GeTe (5nm)/Sb (7nm) ]]4Namely, the thickness of each GeTe layer is 5nm, the thickness of each Sb layer is 7nm, the number of the alternating cycles of the GeTe layer and the Sb layer is 4, and the thickness of the GeSb superlattice phase-change thin-film material is 48 nm.
The preparation process is otherwise the same as in example 1, except that: and step three, when the GeTe/Sb superlattice phase-change thin-film material is prepared by magnetron sputtering, the sputtering time of each Sb layer is 28 s.
Comparative example 1
The comparative example is a single-layer GeTe phase-change film material with the thickness of 50 nm. According to the method of the embodiment 1, the GeTe sputtering rate is set to be 1.44s/nm, the sputtering time is set to be 72s, and the single-layer GeTe phase change thin-film material with the thickness of 50nm is obtained after the sputtering is finished.
Comparative example 2
The comparative example prepared Ge2Sb2Te5And the thickness of the phase-change thin film material is 50 nm. Ge was selected according to the method of example 12Sb2Te5The alloy is used as a sputtering target material, and Ge is obtained after the sputtering is finished2Sb2Te5A phase change film material.
(Experimental example 1)
In order to understand the performance of the GeTe/Sb superlattice phase-change thin-film material, the thin-film materials prepared in examples 1 to 5 and the GeTe thin-film material prepared in comparative example 1 were tested to obtain the in-situ resistance-temperature relationship curve of each phase-change thin-film material.
Referring to fig. 1, the crystallization temperature of the GeTe thin film material is obviously higher than that of the superlattice phase change-like thin film material of the present invention, and the lower crystallization temperature means a smaller activation barrier, which can reduce power consumption in the phase change process, so that the thin film material of the present invention has low power consumption.
The invention relates to a superlattice-like phase change thin film material [ GeTe (a)/Sb (b)]xThe crystallization temperature of the phase change film is further lowered as the relative thickness of the Sb layer increases.
(Experimental example 2)
This example tests [ GeTe (5nm)/Sb (5nm) of example 3 above]5Superlattice-like phase change thin film material and single layer Ge of comparative example 22Sb2Te5The reflectivity of the traditional phase change film material changes with time after being irradiated by nanosecond laser pulses.
Referring to fig. 2, under the effect of laser pulse energy, the reflectivity of the film suddenly changes from a lower value to a larger value, which indicates that the film has amorphous-to-crystalline phase transition, and the phase transition time is used for evaluating the phase transition speed of the phase-change film. [ GeTe (5nm)/Sb (5nm)]5The time for the reflectivity of the superlattice-like phase change film to change suddenly is about 5.3ns, and the single layer of Ge2Sb2Te5Traditional phase change film materialThe time for the reflectivity to jump was about 39 ns. With a conventional single layer of Ge2Sb2Te5Compared with the phase-change film material, [ GeTe (5nm)/Sb (5nm) of the invention]5The superlattice phase change-like thin film material has higher phase change speed, so that the phase change memory has higher operation speed, and the information reading and writing speed of the PCRAM is improved.
Claims (1)
1. A preparation method of GeTe/Sb superlattice phase-change thin-film material for a high-speed phase-change memory is characterized in that the GeTe/Sb superlattice phase-change thin-film material is of a multi-layer composite film structure and is formed by alternately depositing and compounding GeTe layers and Sb layers, wherein one GeTe layer and one Sb layer are used as an alternate period, and the GeTe layer in the next alternate period is deposited above the Sb layer in the previous alternate period; the GeTe layer is obtained by taking GeTe alloy as a target material through a magnetron sputtering method; the film structure of the Ge Te/Sb superlattice phase change thin film material is represented by a general formula [ GeTe (a)/Sb (b)]xDenotes, where a is the thickness of the single GeTe layer, a =5 nm; b is the thickness of the single Sb layer, b =3nm, 4nm, 5nm, 6nm or 7 nm; x is the number of alternating periods of the GeTe and Sb layers, x =4, 5 or 6; wherein x =6 when b =3nm or 4 nm; b =5nm or 6nm, x = 5; b =7nm, x = 4;
the method comprises the following steps:
firstly, preparing a substrate, namely cleaning and drying the substrate for later use;
secondly, preparing magnetron sputtering, namely placing the substrate to be sputtered cleaned in the step I on a base support, respectively installing GeTe alloy and Sb with the atomic percentage of Ge to Te =1 to 1 as sputtering target materials in a magnetron radio frequency sputtering target, and vacuumizing a sputtering chamber of a magnetron sputtering coating system until the vacuum degree in the chamber reaches 1 multiplied by 10-4 Pa, using high-purity argon as sputtering gas, wherein the volume percentage of the high-purity argon is more than or equal to 99.999 percent; the Ar gas flow is 30SCCM, the argon sputtering pressure is 0.3Pa, and the sputtering power of the radio frequency power supply is set to be 30W;
③ preparation of [ GeTe (a)/Sb (b)]xMultilayer composite film:
a. firstly, cleaning the surfaces of a GeTe alloy target material and an Sb target material;
b. after the surface of the target material is cleaned, SiO to be sputtered2the/Si (100) substrate rotates to the GeTe alloy target position, a radio frequency power supply on the GeTe alloy target position is turned on, the sputtering of the GeTe layer is started, the sputtering rate of the GeTe layer is 1.44s/nm, and the radio frequency power supply applied on the GeTe alloy target position is turned off after the sputtering of the GeTe layer is finished;
c. rotating the substrate sputtered with the GeTe layer to an Sb target position, starting a radio frequency power supply on the Sb target position, wherein the sputtering rate of the Sb layer is 4s/nm, and obtaining an Sb layer after the sputtering is finished;
d. and (c) repeating the steps b and c for x-1 times, and finishing the sputtering to obtain the GeTe/Sb superlattice phase-change thin-film material for the high-speed phase-change memory.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810155240.7A CN108258114B (en) | 2015-04-27 | 2015-04-27 | Preparation method of GeTe/Sb superlattice phase-change thin-film material for high-speed phase-change memory |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810155240.7A CN108258114B (en) | 2015-04-27 | 2015-04-27 | Preparation method of GeTe/Sb superlattice phase-change thin-film material for high-speed phase-change memory |
| CN201510205799.2A CN104795494B (en) | 2015-04-27 | 2015-04-27 | GeTe/Sb class superlattices phase change film materials for high-speed phase change memory and preparation method thereof |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510205799.2A Division CN104795494B (en) | 2015-04-27 | 2015-04-27 | GeTe/Sb class superlattices phase change film materials for high-speed phase change memory and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108258114A CN108258114A (en) | 2018-07-06 |
| CN108258114B true CN108258114B (en) | 2020-12-08 |
Family
ID=53560163
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810155240.7A Active CN108258114B (en) | 2015-04-27 | 2015-04-27 | Preparation method of GeTe/Sb superlattice phase-change thin-film material for high-speed phase-change memory |
| CN201510205799.2A Expired - Fee Related CN104795494B (en) | 2015-04-27 | 2015-04-27 | GeTe/Sb class superlattices phase change film materials for high-speed phase change memory and preparation method thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510205799.2A Expired - Fee Related CN104795494B (en) | 2015-04-27 | 2015-04-27 | GeTe/Sb class superlattices phase change film materials for high-speed phase change memory and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN108258114B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321295A (en) * | 2015-12-07 | 2018-07-24 | 江苏理工学院 | A kind of Si/Sb class superlattices phase change film materials for phase transition storage |
| CN106935701B (en) * | 2015-12-29 | 2019-03-22 | 中国科学院上海高等研究院 | Si/GeTe multilayer nanocomposite phase transition film, phase transition storage and preparation method thereof |
| CN105762277B (en) * | 2016-03-09 | 2018-07-03 | 同济大学 | One type superlattices tin selenium/antimony nano phase change film and its preparation and application |
| CN105679934B (en) * | 2016-04-12 | 2018-05-08 | 苏州工业职业技术学院 | A kind of multi-layer nano composite phase-change thin-film material and its preparation method and application |
| CN106185799B (en) * | 2016-09-26 | 2018-11-23 | 江苏理工学院 | A kind of SiO2/ Sb class superlattices nano phase change thin-film material and its preparation method and application |
| CN106185800B (en) * | 2016-10-11 | 2018-11-09 | 江苏理工学院 | A kind of GeTe/Ge classes superlattices nano phase change thin-film material and its preparation method and application |
| CN106601908A (en) * | 2016-12-16 | 2017-04-26 | 同济大学 | Antimony-germanium multilayer nano-composite phase-change material and preparation and application thereof |
| CN106816528B (en) * | 2017-01-16 | 2019-04-02 | 同济大学 | A kind of multilayer nanocomposite phase transition film and its preparation method and application |
| CN108878645B (en) * | 2018-06-14 | 2020-08-25 | 江苏理工学院 | Cu/SnSe nano composite multilayer phase change film and preparation and application thereof |
| CN109686840A (en) * | 2018-12-26 | 2019-04-26 | 江苏理工学院 | Flexible multi-layered compound GeTe/ZnSb phase change film material of one kind and preparation method thereof |
| CN109920910B (en) * | 2019-02-27 | 2022-03-25 | 江苏理工学院 | Flexible V2O5/Ge2Sb2Te5Nano multilayer phase-change film material and preparation method thereof |
| CN111725397A (en) * | 2020-01-19 | 2020-09-29 | 中国科学院上海微系统与信息技术研究所 | Phase change material structure, memory unit and manufacturing method thereof |
| CN112242487B (en) * | 2020-10-15 | 2022-08-12 | 华中科技大学 | Gate tube with quasi-superlattice structure and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101540370A (en) * | 2009-04-23 | 2009-09-23 | 同济大学 | GeTe/Sb2Te3 multilayer nanocomposite phase transition film and preparation method |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100782482B1 (en) * | 2006-05-19 | 2007-12-05 | 삼성전자주식회사 | Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic device including the same and method of fabricating the same |
| CN101241925A (en) * | 2007-02-09 | 2008-08-13 | 财团法人工业技术研究院 | Phase change memory device and its making method |
| JP4595125B2 (en) * | 2007-08-31 | 2010-12-08 | 独立行政法人産業技術総合研究所 | Solid memory |
| JP2010171196A (en) * | 2009-01-22 | 2010-08-05 | Elpida Memory Inc | Solid-state memory and semiconductor device |
| JP4599598B2 (en) * | 2009-03-04 | 2010-12-15 | 独立行政法人産業技術総合研究所 | Solid memory |
| JP2010287744A (en) * | 2009-06-11 | 2010-12-24 | Elpida Memory Inc | Solid-state memory, data processing system, and data processing apparatus |
| KR20130062211A (en) * | 2011-12-03 | 2013-06-12 | 에스케이하이닉스 주식회사 | Variable resistive memory device and method of fabricating the same |
| CN102810636A (en) * | 2012-08-22 | 2012-12-05 | 中国科学院上海微系统与信息技术研究所 | Phase-changing memory unit with similar super lattice structure and preparation method thereof |
-
2015
- 2015-04-27 CN CN201810155240.7A patent/CN108258114B/en active Active
- 2015-04-27 CN CN201510205799.2A patent/CN104795494B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101540370A (en) * | 2009-04-23 | 2009-09-23 | 同济大学 | GeTe/Sb2Te3 multilayer nanocomposite phase transition film and preparation method |
Non-Patent Citations (1)
| Title |
|---|
| Sb含量对GeTe-Sb相变薄膜电学性能和微观结构的影响;谷立新等;《电子显微学报》;20130630;第32卷(第3期);第192页第1段 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104795494B (en) | 2018-04-13 |
| CN108258114A (en) | 2018-07-06 |
| CN104795494A (en) | 2015-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108258114B (en) | Preparation method of GeTe/Sb superlattice phase-change thin-film material for high-speed phase-change memory | |
| CN108539013B (en) | Ge/Sb superlattice phase-change thin film material for high-speed low-power-consumption phase-change memory | |
| CN105489758B (en) | Si/Sb class superlattices phase change film materials for phase transition storage and preparation method thereof | |
| CN105679934B (en) | A kind of multi-layer nano composite phase-change thin-film material and its preparation method and application | |
| CN104900807B (en) | Ga for high-speed low-power-consumption phase change memory40Sb60/ Sb class superlattices phase change film materials and preparation method thereof | |
| CN110911557A (en) | Doped Ge-Sb phase change material, phase change memory and preparation method thereof | |
| CN105355783A (en) | Multilayer nano-composite film material used for high-density phase-transition memory and preparation method thereof | |
| CN109728162B (en) | Phase change film, phase change memory cell, preparation method of phase change memory cell and phase change memory | |
| CN105870323A (en) | Composite phase change film material and preparation method thereof | |
| CN205488236U (en) | Compound phase transition film of multilayer nanometer | |
| CN108823530B (en) | Composite phase-change film material (Si/Ge)2Sb2Te5/Si）nPreparation method of (1) | |
| CN105304815B (en) | A kind of multi-layer nano composite film material and preparation method thereof for low power consumption phase changing memory | |
| CN109037439B (en) | Sn20Sb80/Si multilayer phase-change film material and preparation method thereof | |
| CN106185800B (en) | A kind of GeTe/Ge classes superlattices nano phase change thin-film material and its preparation method and application | |
| CN112614936B (en) | Ti/Sb multilayer nano composite phase change memory film material and preparation method and application thereof | |
| CN106206942B (en) | GeSb nano thin-films of rare earth Er doping vario-property and preparation method thereof | |
| CN109273596B (en) | Multilayer phase change film material with high thermal stability and low power consumption performance | |
| CN107369760B (en) | Phase change film for phase change memory and preparation method thereof | |
| CN109285944B (en) | Superlattice-like phase-change thin film material with rapid transformation performance | |
| CN113285021B (en) | Y-doped Sb-based nano phase change memory film material and preparation method and application thereof | |
| CN110729401B (en) | Ga-Sb-O phase-change material and application and preparation method thereof | |
| WO2013060034A1 (en) | Storage material based on silicon doped bismuth-tellurium for phase-changing storage devices and preparation method therefor | |
| CN116390634A (en) | PEEK substrate-based multilayer nano composite phase change memory film material and preparation and application thereof | |
| CN117956889A (en) | HfN-Ge-Sb-Te phase change material and low-power consumption phase change memory | |
| CN111276609A (en) | Superlattice-like zinc antimony-antimony selenium nano phase change film and preparation and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |