CN111725397A - Phase change material structure, memory unit and manufacturing method thereof - Google Patents

Phase change material structure, memory unit and manufacturing method thereof Download PDF

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Publication number
CN111725397A
CN111725397A CN202010061430.XA CN202010061430A CN111725397A CN 111725397 A CN111725397 A CN 111725397A CN 202010061430 A CN202010061430 A CN 202010061430A CN 111725397 A CN111725397 A CN 111725397A
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layer
phase change
change material
material structure
material layer
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宋志棠
宋文雄
赵进
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Shanghai Institute of Microsystem and Information Technology of CAS
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Shanghai Institute of Microsystem and Information Technology of CAS
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering

Abstract

The invention relates to the technical field of micro-nano electronics, and discloses a phase change material structure which comprises a first material layer and a second material layer, wherein the first material layer is arranged on the second material layer; the material of the first material layer is a compound containing two chemical elements of titanium (Ti) and tellurium (Te), and the chemical formula of the material of the first material layer is titanium telluride (Ti)xTey) Wherein x and y are atomic percentages of elements; the material of the second material layer is antimony (Sb). The phase-change material structure provided by the invention has the characteristics of good thermal stability and high phase-change speed, and can block the diffusion of antimony (Sb).

Description

Phase change material structure, memory unit and manufacturing method thereof
Technical Field
The invention relates to the technical field of micro-nano electronics, in particular to a phase change material structure, a memory unit and a manufacturing method thereof.
Background
As an important component of the integrated circuit industry, there are various semiconductor Memory technologies, including conventional volatile Memory technologies, such as SRAM (Static Random-Access Memory) and DRAM (Dynamic Random-Access Memory); and nonvolatile memory technologies such as EEPROM (Electrically Erasable Programmable read only memory), FLASH memory, and the like. These technologies have played a great role in the fields of large data centers, consumer electronics, automotive electronics, and the like, but with the development of information technology, large data centers have put higher demands on storage density, power consumption, and speed, and consumer electronics have put higher demands on memories for upgrading and upgrading. In the face of further reduction of DRAM and FLASH and the existence of a huge technical bottleneck in compatibility with a novel CMOS (Complementary Metal Oxide Semiconductor), a phase change memory (PCRAM) is compatible with the novel CMOS technology and can continue for at least four generations after a 40 nm technology node, so that high importance and a large amount of investment are obtained in the international industrial and academic circles.
Phase change memory technology is a technology in which a phase change material, which is a material of different physical states that can be repeatedly changed and used for a desired task, is transformed between a crystalline state and an amorphous state by the action of an external signal (an electrical signal and an optical signal). In particular, a phase change memory is a type of non-volatile random access memory that utilizes a detectable change in the physical state of a phase change material as an information storage medium. For example, a phase change of a material from an amorphous state to a crystalline state, or vice versa, may be induced and detected in order to store and then retrieve information. As a simplified example, the phase change material may be heated and cooled in such a way that the material solidifies in an amorphous and crystalline state, or other specific heating and cooling schemes may be employed that cause solidification of the phase change material at different specific degrees of crystallinity over the spectrum between the fully amorphous and fully crystalline states.
Now, antimony (Sb) has been studied to prove that it is a phase change material capable of high-speed phase change, has a higher melting point, is less volatile than other phase change materials, but is difficult to be applied to devices due to its easy diffusion at high temperature.
Disclosure of Invention
The method aims to solve the technical problems that antimony (Sb) mentioned in the background art is easy to diffuse and the existing phase change material is poor in thermal stability.
The present application discloses in a first aspect a phase change material structure comprising a first material layer and a second material layer;
the first material layer is arranged on the second material layer;
the material of the first material layer is a compound containing two chemical elements of titanium (Ti) and tellurium (Te), and the chemical formula of the material of the first material layer is titanium telluride (Ti)xTey) Wherein x and y are atomic percentages of elements;
the material of the second material layer is antimony (Sb).
Optionally, in the titanium telluride (Ti)xTey) Wherein x is more than 0 and less than 100, and x + y is more than 0 and less than or equal to 100.
Optionally, at least two layers of the second material and at least one layer of the first material are included;
and a layer of the at least one first material layer is arranged between the adjacent at least two second material layers.
Optionally, the thickness of the first material layer ranges from 0.5 nm to 30 nm;
the thickness of the second material layer ranges from 0.5 nm to 30 nm.
In a second aspect, the present application discloses a method for preparing a phase change material structure, comprising the steps of:
preparing the first material layer; the material of the first material layer is a compound containing two chemical elements of titanium (Ti) and tellurium (Te), and the chemical formula of the material of the first material layer is titanium telluride (Ti)xTey) Wherein x and y are atomic percentages of elements;
preparing the second material layer on the surface of the first material layer; the material of the second material layer is antimony (Sb).
Optionally, preparing the first material layer by a magnetron sputtering method, a chemical vapor deposition method, an atomic layer deposition method or an electron beam evaporation method;
and forming the second material layer on the surface of the first material layer by a magnetron sputtering method, a chemical vapor deposition method, an atomic layer deposition method or an electron beam evaporation method.
Optionally, co-sputtering a titanium (Ti) elementary substance target, a tellurium (Te) elementary substance target and an antimony (Sb) elementary substance target to prepare the phase-change material structure;
the vacuum degree of a sputtering bin for sputtering the phase-change material structure is less than 3.0 multiplied by 10 < -4 > Pa;
the sputtering gas is argon;
the sputtering pressure range is 0.40 Pa to 0.45 Pa;
the sputtering time ranges from 10 minutes to 30 minutes.
The present application discloses in a third aspect a memory cell comprising a first electrode layer, a second electrode layer and the above phase change material structure;
the phase change material structure is positioned on the first electrode layer;
the second electrode layer is located on the phase change material structure.
Optionally, an adhesion layer is disposed between the first electrode layer and the phase change material structure, or an adhesion layer is disposed between the second electrode layer and the phase change material structure.
Optionally, the material of the adhesion layer is at least one of tungsten (W), platinum (Pt), gold (Au), titanium (Ti), aluminum (Al), silver (Ag), copper (Cu), and nickel (Ni).
The present application discloses in a fourth aspect a method of making a memory cell, comprising the steps of:
preparing a first electrode layer;
preparing a phase-change material structure on the surface of the first electrode layer;
and preparing a second electrode layer on the surface of the phase-change material structure layer.
Alternatively, the first electrode layer and the second electrode layer are prepared by a sputtering method, an evaporation method, a chemical vapor deposition method, a plasma-enhanced chemical vapor deposition method, a low-pressure chemical vapor deposition method, a metal compound vapor deposition method, a molecular beam epitaxy method, an atomic vapor deposition method, or an atomic layer deposition method.
Adopt above-mentioned technical scheme, the phase change material structure that this application provided has following beneficial effect:
the phase change material structure comprises a first material layer and a second material layer, wherein the first material layer is arranged on the second material layer; the material of the first material layer is a compound containing two chemical elements of titanium (Ti) and tellurium (Te), and the chemical formula of the material of the first material layer is titanium telluride (Ti)xTey) Wherein x and y are atomic percentages of elements; the material of the second material layer is antimony (Sb).
Due to TixTeyThe phase change material has excellent thermal stability, the crystal lattice of the phase change material can be matched with the crystal lattice of antimony (Sb), so that the diffusion of the antimony (Sb) can be effectively prevented in the operating temperature range of the phase change material, and the phase separation in multi-component is inhibited, so that the phase change material has excellent thermal stability;
and stable crystalline TixTeyThe layer provides an ordered interface to accelerate the crystallization process of amorphous Sb, so that the phase change material structure has the characteristic of high-speed phase change.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a phase change material structure according to the present application;
FIG. 2 is a schematic diagram of a memory cell according to the present application;
the following is a supplementary description of the drawings:
1-phase change material structure; 101-a first material layer; 102-a second material layer; 3-a first electrode layer; 4-a second electrode layer; 5-adhesive layer.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the present application. In the description of the present application, it is to be understood that the terms "upper", "lower", "top", "bottom", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. Moreover, the terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein.
As shown in fig. 1, fig. 1 is a schematic structural diagram of a phase change material structure 1 according to the present application. The phase change material structure 1 comprises a first material layer 101 and a second material layer 102, wherein the first material layer 101 is arranged on the second material layer 102; the material of the first material layer 101 is a compound including two chemical elements of titanium (Ti) and tellurium (Te), and the chemical formula of the material of the first material layer 101 is titanium telluride (Ti)xTey) Wherein x and y are atomic percentages of elements; the second oneThe material of the material layer 102 is antimony (Sb).
Due to titanium telluride (Ti)xTey) The phase change material has excellent thermal stability, the crystal lattice of the phase change material can be matched with the crystal lattice of antimony (Sb), so that the antimony (Sb) can be effectively prevented from diffusing within the operating temperature range of the phase change material, and the phase separation during multi-component is inhibited, so that the phase change material structure 1 has excellent thermal stability;
and stable crystalline titanium telluride (Ti)xTey) The layer provides an ordered interface to accelerate the crystallization process of amorphous antimony (Sb), so that the phase-change material structure 1 has the characteristic of high-speed phase change.
In an alternative embodiment, the titanium telluride (Ti)xTey) Wherein x is more than 0 and less than 100, and x + y is more than 0 and less than or equal to 100.
The phase-change material structure 1 can realize reversible conversion of high and low resistance values under the operation of electric pulse signals, and the resistance value is kept unchanged under the operation without the electric pulse signals.
In an alternative embodiment, the phase change material structure 1 presents at least two stable resistance states under the influence of an electric pulse.
In an alternative embodiment, the phase change material structure 1 comprises at least two second material layers 102 and at least one first material layer 101; in an application scenario, the phase change material structure 1 is applied to a memory, the number of layers and the thickness of the phase change material structure 1 may be adjusted according to performance requirements of the memory device, and the phase change material structure may also be a structure in which the first material layers 101 and the second material layers are alternately arranged.
In an alternative embodiment, the thickness of the first material layer 101 ranges from 0.5 nm to 30 nm; the thickness of the second material layer 102 ranges from 0.5 nm to 30 nm, specifically, the thickness of the first material layer 101 ranges from 1 nm to 10 nm, and the thickness of the second material layer 102 ranges from 1 nm to 20 nm.
A method of making a phase change material structure 1, comprising the steps of: preparing the first material layer 101; the material of the first material layer 101 is a compound including two chemical elements of titanium (Ti) and tellurium (Te), and the chemical formula of the material of the first material layer 101 is titanium telluride (Ti)xTey) Wherein x and y are atomic percentages of elements;
preparing the second material layer 102 on the surface of the first material layer 101; the material of the second material layer 102 is antimony (Sb).
Specifically, the first material layer 101 is prepared by a magnetron sputtering method, a chemical vapor deposition method, an atomic layer deposition method, or an electron beam evaporation method;
the second material layer 102 is formed on the surface of the first material layer 101 by a magnetron sputtering method, a chemical vapor deposition method, an atomic layer deposition method, or an electron beam evaporation method.
In an optional embodiment, the phase-change material structure 1 is prepared by co-sputtering a titanium (Ti) elementary substance target, a tellurium (Te) elementary substance target and an antimony (Sb) elementary substance target, the vacuum degree of a sputtering chamber for sputtering the phase-change material structure 1 is less than 3.0 × 10-4 Pa, the sputtering gas is argon, the sputtering pressure range is 0.40 Pa-0.45 Pa, the sputtering time range is 10 minutes-30 minutes, the sputtering temperature is controlled within the range of 25 ℃ to 300 ℃, and stable titanium telluride (Ti) can be promotedxTey) A crystalline phase is formed.
FIG. 2 is a schematic diagram of a memory cell according to the present application. A memory cell comprises a first electrode layer 3, a second electrode layer 4 and the phase change material structure 1; the phase change material structure 1 is located on the first electrode layer 3; the second electrode layer 4 is located on the phase change material structure 1, and specifically, the thickness of the phase change material structure 1 is controlled within a range of 20 nm to 100 nm.
In an optional embodiment, an adhesive layer 5 is disposed between the first electrode layer 3 and the phase change material structure 1, and the adhesive layer 5 is used to improve the adhesion between the first electrode layer 3 and the phase change material structure 1 and ensure good electrical performance; in another alternative embodiment, an adhesion layer 5 is provided between the second electrode layer 4 and the phase change material structure 1.
In an alternative embodiment, the material of the adhesion layer 5 is at least one of tungsten (W), platinum (Pt), gold (Au), titanium (Ti), aluminum (Al), silver (Ag), copper (Cu), and nickel (Ni);
the material of the first electrode layer 3 and the second electrode layer 4 is at least one of tungsten (W), platinum (Pt), gold (Au), titanium (Ti), aluminum (Al), silver (Ag), copper (Cu) and nickel (Ni);
in another alternative embodiment, the adhesion layer 5 is an oxide or nitride of tungsten (W), platinum (Pt), gold (Au), titanium (Ti), aluminum (Al), silver (Ag), copper (Cu), or nickel (Ni);
the first electrode layer 3 is an oxide or nitride of tungsten (W), platinum (Pt), gold (Au), titanium (Ti), aluminum (Al), silver (Ag), copper (Cu), or nickel (Ni);
the second electrode layer 4 is an oxide or nitride of tungsten (W), platinum (Pt), gold (Au), titanium (Ti), aluminum (Al), silver (Ag), copper (Cu), or nickel (Ni).
The application also discloses a preparation method of the memory unit, which comprises the following steps: preparing a first electrode layer 3; preparing a phase change material structure 1 on the surface of the first electrode layer 3; and preparing a second electrode layer 4 on the surface of the phase change material structure 1 layer.
Specifically, the first electrode layer 3 and the second electrode layer 4 are prepared by a sputtering method, an evaporation method, a chemical vapor deposition method, a plasma-enhanced chemical vapor deposition method, a low-pressure chemical vapor deposition method, a metal compound vapor deposition method, a molecular beam epitaxy method, an atomic vapor deposition method, or an atomic layer deposition method.
The above description is only exemplary of the present application and should not be taken as limiting, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (12)

1. A phase change material structure, characterized by comprising a first material layer (101) and a second material layer (102);
the first material layer (101) is arranged on the second material layer (102);
the material of the first material layer (101) is a compound comprising two chemical elements of titanium (Ti) and tellurium (Te), and the chemical general formula of the material of the first material layer (101) is titanium telluride (Ti)xTey) Wherein x and y are atomic percentages of elements;
the material of the second material layer (102) is antimony (Sb).
2. The phase change material structure of claim 1,
in the titanium telluride (Ti)xTey) Wherein x is more than 0 and less than 100, and x + y is more than 0 and less than or equal to 100.
3. The phase change material structure of claim 1,
comprising at least two layers (102) of a second material and at least one layer (101) of a first material;
a layer of the at least one first material layer (101) is arranged between the adjacent at least two second material layers (102).
4. The phase change material structure of claim 1,
the thickness range of the first material layer (101) is 0.5-30 nanometers;
the thickness of the second material layer (102) ranges from 0.5 nm to 30 nm.
5. The preparation method of the phase change material structure is characterized by comprising the following steps of:
preparing a first material layer (101); the material of the first material layer (101) is a compound comprising two chemical elements of titanium (Ti) and tellurium (Te), and the chemical general formula of the material of the first material layer (101) is titanium telluride (Ti)xTey) Wherein x and y are atomic percentages of elements;
preparing a second material layer (102) on the surface of the first material layer (101); the material of the second material layer (102) is antimony (Sb).
6. The method of claim 5, wherein the phase change material structure is selected from the group consisting of a phase change material structure,
preparing the first material layer (101) by magnetron sputtering, chemical vapor deposition, atomic layer deposition or electron beam evaporation;
and forming the second material layer (102) on the surface of the first material layer (101) by a magnetron sputtering method, a chemical vapor deposition method, an atomic layer deposition method or an electron beam evaporation method.
7. The method of claim 6, wherein the phase change material structure is selected from the group consisting of a phase change material structure,
co-sputtering a titanium (Ti) elementary substance target, a tellurium (Te) elementary substance target and an antimony (Sb) elementary substance target to prepare the phase-change material structure (1);
the vacuum degree of a sputtering bin for sputtering the phase-change material structure (1) is less than 3.0 multiplied by 10 < -4 > Pa;
the sputtering gas is argon;
the sputtering pressure range is 0.40 Pa to 0.45 Pa;
the sputtering time ranges from 10 minutes to 30 minutes.
8. A memory cell, comprising: a first electrode layer (3), a second electrode layer (4) and a phase change material structure (1) according to any of claims 1-4;
the phase change material structure (1) is located on the first electrode layer (3);
the second electrode layer (4) is located on the phase change material structure (1).
9. The memory cell of claim 8,
an adhesive layer (5) is arranged between the first electrode layer (3) and the phase-change material structure (1), or an adhesive layer (5) is arranged between the second electrode layer (4) and the phase-change material structure (1).
10. The memory cell of claim 9,
the material of the bonding layer (5) is at least one of tungsten (W), platinum (Pt), gold (Au), titanium (Ti), aluminum (Al), silver (Ag), copper (Cu) and nickel (Ni).
11. A method for fabricating a memory cell, comprising:
preparing a first electrode layer (3);
preparing a phase change material structure (1) on the surface of the first electrode layer (3);
and preparing a second electrode layer (4) on the surface of the phase-change material structure (1) layer.
12. The method of claim 11, wherein the step of forming the memory cell,
the first electrode layer (3) and the second electrode layer (4) are prepared by a sputtering method, an evaporation method, a chemical vapor deposition method, a plasma-enhanced chemical vapor deposition method, a low-pressure chemical vapor deposition method, a metal compound vapor deposition method, a molecular beam epitaxy method, an atomic vapor deposition method, or an atomic layer deposition method.
CN202010061430.XA 2020-01-19 2020-01-19 Phase change material structure, memory unit and manufacturing method thereof Pending CN111725397A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115117239A (en) * 2021-06-11 2022-09-27 华为技术有限公司 Phase change memory unit, phase change memory, electronic equipment and preparation method

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070170413A1 (en) * 2004-05-14 2007-07-26 Yuichi Matsui Semiconductor memory
CN101192649A (en) * 2006-11-30 2008-06-04 三星电子株式会社 Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the same
KR20100029952A (en) * 2008-09-09 2010-03-18 주식회사 하이닉스반도체 Phase change random access memory device with the metallic capping layer and manufacturing of the same
US20140299832A1 (en) * 2013-03-15 2014-10-09 Adesto Technologies Corporation Nonvolatile memory elements having conductive structures with semimetals and/or semiconductors
CN104795494A (en) * 2015-04-27 2015-07-22 江苏理工学院 GeTe/Sb superlattice phase-change film material for high-speed phase change memories and preparation method of file material
US20160118585A1 (en) * 2013-03-03 2016-04-28 Adesto Technologies Corporation Resistive Switching Devices Having a Switching Layer and an Intermediate Electrode Layer and Methods of Formation Thereof
CN106185799A (en) * 2016-09-26 2016-12-07 江苏理工学院 A kind of SiO2/ Sb class superlattices nano phase change thin-film material and its preparation method and application
CN108461628A (en) * 2018-03-02 2018-08-28 中国科学院上海微系统与信息技术研究所 Self-heating phase-change memory cell and self-heating phase change storage structure
US20180301627A1 (en) * 2014-08-29 2018-10-18 Intel Corporation Materials and components in phase change memory devices
KR20190098423A (en) * 2018-02-14 2019-08-22 세종대학교산학협력단 METHOD FOR DEPOSITING Ti-Te FILM BY ALD, AND MULTILAYER PHASE-CHANGE STRUCTURE INCLUDING Ti-Te BARRIER FILM AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070170413A1 (en) * 2004-05-14 2007-07-26 Yuichi Matsui Semiconductor memory
CN101192649A (en) * 2006-11-30 2008-06-04 三星电子株式会社 Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the same
KR20100029952A (en) * 2008-09-09 2010-03-18 주식회사 하이닉스반도체 Phase change random access memory device with the metallic capping layer and manufacturing of the same
US20160118585A1 (en) * 2013-03-03 2016-04-28 Adesto Technologies Corporation Resistive Switching Devices Having a Switching Layer and an Intermediate Electrode Layer and Methods of Formation Thereof
US20140299832A1 (en) * 2013-03-15 2014-10-09 Adesto Technologies Corporation Nonvolatile memory elements having conductive structures with semimetals and/or semiconductors
US20180301627A1 (en) * 2014-08-29 2018-10-18 Intel Corporation Materials and components in phase change memory devices
CN104795494A (en) * 2015-04-27 2015-07-22 江苏理工学院 GeTe/Sb superlattice phase-change film material for high-speed phase change memories and preparation method of file material
CN106185799A (en) * 2016-09-26 2016-12-07 江苏理工学院 A kind of SiO2/ Sb class superlattices nano phase change thin-film material and its preparation method and application
KR20190098423A (en) * 2018-02-14 2019-08-22 세종대학교산학협력단 METHOD FOR DEPOSITING Ti-Te FILM BY ALD, AND MULTILAYER PHASE-CHANGE STRUCTURE INCLUDING Ti-Te BARRIER FILM AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME
CN108461628A (en) * 2018-03-02 2018-08-28 中国科学院上海微系统与信息技术研究所 Self-heating phase-change memory cell and self-heating phase change storage structure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JIABIN SHEN等: ""Thermal Barrier Phase Change Memory"", 《ACS APPLIED MATERIALS & INTERFACES》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115117239A (en) * 2021-06-11 2022-09-27 华为技术有限公司 Phase change memory unit, phase change memory, electronic equipment and preparation method
CN115117239B (en) * 2021-06-11 2023-08-22 华为技术有限公司 Phase-change memory cell, phase-change memory, electronic equipment and preparation method

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