CN108461628A - Self-heating phase-change memory cell and self-heating phase change storage structure - Google Patents
Self-heating phase-change memory cell and self-heating phase change storage structure Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 197
- 230000015654 memory Effects 0.000 title claims abstract description 134
- 230000008859 change Effects 0.000 title claims abstract description 73
- 238000003860 storage Methods 0.000 title claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 63
- 239000011232 storage material Substances 0.000 claims abstract description 44
- 229910052798 chalcogen Inorganic materials 0.000 claims abstract description 7
- 150000001787 chalcogens Chemical class 0.000 claims abstract description 7
- 229910017629 Sb2Te3 Inorganic materials 0.000 claims description 41
- 230000007704 transition Effects 0.000 claims description 36
- 229910008561 TiTe2 Inorganic materials 0.000 claims description 20
- 230000009466 transformation Effects 0.000 claims description 16
- 238000010276 construction Methods 0.000 claims description 12
- 229910004214 TaSe2 Inorganic materials 0.000 claims description 10
- 230000002441 reversible effect Effects 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 6
- 229910002899 Bi2Te3 Inorganic materials 0.000 claims description 5
- 229910005643 SnTe2 Inorganic materials 0.000 claims description 5
- 229910004202 TaTe2 Inorganic materials 0.000 claims description 5
- 229910003092 TiS2 Inorganic materials 0.000 claims description 5
- 229910008483 TiSe2 Inorganic materials 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims 1
- 238000005265 energy consumption Methods 0.000 abstract description 3
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- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
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- 238000002474 experimental method Methods 0.000 description 5
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- 238000002441 X-ray diffraction Methods 0.000 description 2
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- 229910045601 alloy Inorganic materials 0.000 description 2
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
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Abstract
A kind of self-heating phase-change memory cell of present invention offer and self-heating phase change storage structure.Self-heating phase-change memory cell includes self-heating electrode and the phase change memory medium that is connected with the self-heating electrode, the self-heating electrode includes at least one layer of self-heating material layer, the phase change memory medium includes at least one layer of phase-change storage material layer, wherein, the self-heating material layer is different with the material of the phase-change storage material layer, and the self-heating material layer and the phase-change storage material layer include at least one chalcogen.The self-heating phase-change memory cell of the present invention also characteristic with low-power consumption while with rapid data write capability, and the heat between adjacent self-heating phase-change memory cell can effectively be avoided to interfere；The self-heating phase change storage structure of the present invention has very fast writing speed, and data holding ability is strong, while also having many advantages, such as low in energy consumption, and service life is long.
Description
Technical field
The present invention relates to semi-conducting material and field of semiconductor devices, more particularly to a kind of self-heating phase-change memory cell
And self-heating phase change storage structure.
Background technology
Phase transition storage (PCRAM) is a kind of non-volatile memory device.Its basic principle is to be with chalcogenide compound
Storage medium makes storage medium mutually be converted to real between crystalline state (low-resistance) and amorphous state (high resistant) using electric energy (heat)
The write-in and erasing of existing information.Specifically, resistance sizes of the reading of information by measuring storage medium, it is high resistant " 1 " to compare it
Or low-resistance " 0 " is realized.Since phase transition storage need not wipe pervious code or data before more fresh code is written,
Therefore its speed is more advantageous than traditional NAND, access time is more balanced, and phase transition storage is not necessarily to mechanical rotation device, preserves generation
Code or data do not need refresh current yet, therefore power dissipation ratio HDD, NAND, DRAM is low.In addition, phase transition storage is also proved have
There is the advantages that long lifespan, storage density is high, and Radiation hardness is strong, so phase transition storage is considered as most possible substitution tradition
Mainstream memory and as future memory main product.Main several large memories producers of the world are also all promptly carrying out phase
The research and development of transition storage and related phase-change storage material.
From the point of view of existing research and development situation, the large-scale application of phase transition storage there is also problems have it is to be overcome.
For example, how the problem of how further decreasing power consumption of phase-change memory, avoid phase-change storage material during undergoing phase transition
Interference effect between the problem of phase transition storage may being caused to fail because of the variation of material volume and adjacent phase-change memory cell
The problems such as device performance stability.Currently, to the research and development of phase transition storage generally concentrate on by basis phase-change material into
Row doping, such as in Sb2Te3Middle doping Ti, N, Sn etc., to further increase its data retention by improving its crystallization temperature
And the problems such as reducing the interference between consecutive storage unit.But the phase-change material of doping can lead to phase transformation again because melting temperature increases
The power consumption of memory increases, and due to doping generates split-phase the cycle life of phase change memory device is reduced etc..Therefore, it researches and develops
Go out a kind of new phase change memory device, category must to seek to balance in fact in various aspects such as its data holding ability, power consumption, phase velocities
It wants.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of self-heating phase-change memory cells
And self-heating phase change storage structure, phase change memory list higher for solving power consumption of phase-change memory in the prior art, adjacent
The problems such as heat interference is easy tod produce between member.
In order to achieve the above objects and other related objects, the present invention provides a kind of self-heating phase-change memory cell, it is described from
Heating phase-change memory cell includes self-heating electrode and the phase change memory medium that is connected with the self-heating electrode, it is described from
It includes at least one layer of self-heating material layer to heat electrode, and the phase change memory medium includes at least one layer of phase-change storage material layer,
Wherein, the material of the self-heating material layer and the phase-change storage material layer is different, and the self-heating material layer and described
Phase-change storage material layer includes at least one chalcogen.
Preferably, the self-heating phase-change material layers are in crystalline state always, and crystalline state-can occur for the phase-change storage material layer
Amorphous reversible transition.
Preferably, the crystalline resistance of the phase-change storage material layer is more than 103Ohm, and the phase-change storage material layer
The crystalline resistance value of crystalline resistance value and the self-heating material layer is in the same order of magnitude.
Preferably, the chemical formula of the composition of the self-heating material layer is MX2, wherein M is metallic element, and X is sulfur family
Element.
It is highly preferred that the composition of the self-heating material layer is selected from by TiTe2、TiSe2、TiS2、TaSe2、MoSe2、
TaSe2、SnTe2And TaTe2It is one or more in the group constituted.
Preferably, the composition of the phase-change storage material layer is selected from by Sb2Te3、Bi2Te3、Sc2Te3、BiSbTe3、
Bi2Se3And Sc2Se3It is one or more in the group constituted.
Preferably, the self-heating electrode includes 2~5 layers of self-heating material layer, and the phase change memory medium includes 5
~10 layers of phase-change storage material layer.
Preferably, the repeatable number of operations of the self-heating phase-change memory cell is not less than 107It is secondary.
Preferably, the writing speed of the self-heating phase-change memory cell is in nanosecond rank.
The present invention also provides a kind of self-heating phase change storage structure, the self-heating phase change storage structure is folded including at least one
Layer structure, the laminated construction includes at least one self-heating phase-change memory cell as described in above-mentioned either a program.
Preferably, the laminated construction includes multiple self-heating phase-change memory cells being sequentially stacked, wherein an institute
State the phase change memory medium in self-heating phase-change memory cell and another self-heating phase change memory list adjacent thereto
The self-heating contact electrode in member.
It is highly preferred that the laminated construction includes 5~20 self-heating phase-change memory cells.
As described above, the self-heating phase-change memory cell and self-heating phase change storage structure of the present invention, have beneficial below
Effect：The self-heating phase-change memory cell of the present invention includes self-heating electrode and phase change memory medium, and self-heating electrode is in phase
Become during storage medium is undergone phase transition and do not undergo phase transition and maintain crystalline state always, so as to be entire self-heating phase transformation
Storage unit provides a relatively stable heating power to maintain phase transformation, ensures self-heating phase-change memory cell with quick
The also characteristic with low-power consumption while data writing capability, and can effectively avoid between adjacent self-heating phase-change memory cell
Heat interference；The self-heating phase change storage structure of the present invention has very fast writing speed, and data holding ability is strong, together
When, also has many advantages, such as low in energy consumption, and service life is long.
Description of the drawings
Fig. 1 be shown as the embodiment of the present invention one based on TiTe2-Sb2Te3Self-heating phase-change memory cell superlattices
Structural schematic diagram.
Fig. 2 is shown as the TiTe in the embodiment of the present invention one2-Sb2Te3Superlattice structure anneals 2 under condition of different temperatures
X-ray diffraction result after minute.
Fig. 3 is in the embodiment of the present invention one based on TiTe2-Sb2Te3The self-heating phase-change memory cell of superlattice structure
Resistance and voltage curve.
Fig. 4 be shown as in the embodiment of the present invention one based on TiTe2-Sb2Te3The self-heating phase change memory of superlattice structure
The test experiments result of the writing speed of unit.
Fig. 5 be shown as in the embodiment of the present invention one based on TiTe2-Sb2Te3The self-heating phase change memory of superlattice structure
The test experiments result of the repetitive operation number of unit.
Fig. 6 is in the embodiment of the present invention one based on TiTe2-Sb2Te3The self-heating phase-change memory cell of superlattice structure
Testing fatigue before and after resistance and voltage correlation curve.
Fig. 7 is shown as the self-heating phase change storage structure of the embodiment of the present invention two.
Component label instructions
1 self-heating phase-change memory cell
11 self-heating electrodes
111 self-heating material layers
12 phase change memory mediums
121 phase-change storage material layers
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this explanations by particular specific embodiment below
Content disclosed by book understands other advantages and effect of the present invention easily.
It please refers to Fig.1 to Fig. 7.It should be clear that structure, ratio, size etc. depicted in this specification institute accompanying drawings, only to
Coordinate the revealed content of specification, so that those skilled in the art understands and reads, being not limited to the present invention can be real
The qualifications applied, therefore do not have technical essential meaning, the tune of the modification of any structure, the change of proportionate relationship or size
It is whole, in the case where not influencing the effect of present invention can be generated and the purpose that can reach, should all still fall in disclosed skill
In the range of art content can cover.Meanwhile in this specification it is cited as "upper", "lower", "left", "right", " centre " and
The term of " one " etc. is merely convenient to being illustrated for narration, rather than to limit the scope of the invention, relativeness
It is altered or modified, under the change of no substantial technological content, when being also considered as the enforceable scope of the present invention.
As shown in Figures 1 to 6, the present invention provides a kind of self-heating phase-change memory cell 1, the self-heating phase change memory list
Member 1 includes self-heating electrode 11 and the phase change memory medium 12 being connected with the self-heating electrode 11, the self-heating electricity
Pole 11 includes at least one layer of self-heating material layer 111, and the phase change memory medium 12 includes at least one layer of phase-change storage material layer
121, wherein the self-heating material layer 111 is different with the material of the phase-change storage material layer 121, more precisely, described
The constitution element of the constitution element of self-heating material layer 111 and the phase-change storage material layer 121 is not exactly the same, and it is described from
Heating material layer 111 and the phase-change storage material layer 121 include at least one chalcogen.
As an example, the self-heating phase-change material layers 111 are in crystalline state always, the phase-change storage material layer 121 can
The amorphous reversible transition of crystalline state-occurs.When the phase-change storage material layer 121 is in crystalline state, the phase-change storage material
The crystalline resistance value of layer 121 is in high value, for example is more than 103Ohm, and the crystalline resistance of the phase-change storage material layer 121
The crystalline resistance value of value and the self-heating material layer 111 is in the same order of magnitude.At the phase-change storage material layer 121
Resistance value when crystalline state and resistance when in amorphous state differ greatly, or even can differ the 4-6 order of magnitude, thus, it utilizes
Electric energy (heat) makes the phase change memory medium 12, and mutually conversion can be real between crystalline state (low-resistance) and amorphous state (high resistant)
The write-in and erasing of existing information.For example, the reading of information can measure the resistance sizes of the phase change memory medium 12, compare it
It is high resistant " 1 " or low-resistance " 0 " to realize.And the self-heating electrode 11 is not involved in phase transformation, in entire phase transition process, always
In crystalline state, thus when the phase change memory connects medium 12 and undergoes phase transition melting, in the self-heating phase-change memory cell 1 still
It can go to maintain phase transformation there are one relatively stable heating power.
As an example, the chemical formula of the composition of 111 material of self-heating material layer is MX2, wherein M is metal member
Element, X are chalcogen.Specifically, the composition of the self-heating material layer 111 can be selected from but be not limited only to by TiTe2、
TiSe2、TiS2、TaSe2、MoSe2、TaSe2、SnTe2Or TaTe2One or more in the group constituted, the phase transformation is deposited
The composition of storage material layer 121 can be selected from but be not limited only to by Sb2Te3、Bi2Te3、Sc2Te3、BiSbTe3、Bi2Se3、
Sc2Se3It is one or more in the group constituted.One common ground of above-mentioned material composition is including at least one sulphur
Race's element is further analyzed, TiTe2、TiSe2、TiS2、TaSe2、MoSe2、TaSe2、SnTe2And TaTe2There is similar atom
It arranges and shows similar physics and chemical property, and Sb2Te3、Bi2Te3、Sc2Te3、BiSbTe3、Bi2Se3And Sc2Se3Have
Similar Atomic Arrangement and similar physics and chemical property are shown, for example crystalline state-amorphous can occur under certain condition
The reversible transition of state, it is possible thereby to as phase-change storage material, thus can be used as alternative materials use in the present invention.
As an example, the self-heating electrode 11 can with but be not limited only to include 2~5 layers of self-heating material layer 111,
The phase change memory medium 12 can with but be not limited only to include 5~10 layers of phase-change storage material layer 121.The self-heating electricity
The number of layers that pole 11 and the phase change memory medium 12 include is unsuitable too many or very little.For example, if the self-heating is electric
The self-heating phase-change memory cell 1 can be caused excessive if 111 number of plies of self-heating material layer that pole 11 includes is too many, no
Conducive to the integrated of subsequent device；If 111 number of plies of self-heating material layer that the self-heating electrode 11 includes is very little
Good self-heating effect is not had then and the effect of the adjacent self-heating phase-change memory cell 1 is isolated.Likewise, if
It is unfavorable for the miniaturization of device if 121 number of plies of phase-change storage material layer that the phase change memory medium 12 includes is too many,
But if can cause the memory capacity of the self-heating phase-change memory cell 1 limited if very little.
For the design further illustrated the present invention, constructed based on TiTe in the present embodiment2-Sb2Te3The phase transformation of material is deposited
Storage unit, wherein the TiTe2Self-heating electrode 11 of the material layer as the self-heating phase-change memory cell 1, it is described
Sb2Te3Phase change memory medium 12 of the material layer as the self-heating phase-change memory cell 1, the self-heating electrode 11 and described
Phase change memory medium 12 is connected and the phase change memory medium 12 is located at the surface of the self-heating electrode 11.More specifically,
The TiTe2Material layer includes 4 layers of TiTe2Crystal structure, the Sb2Te3Material layer includes 8 layers of Sb2Te3Crystal structure, it is described
TiTe2Material layer and the Sb2Te3Material layer has common chalcogen Te, thus the TiTe2Material layer and described
Sb2Te3Lattice mismatch of the material layer at linkage interface is very small, and the TiTe2Material layer and the Sb2Te3Material layer structure
It is specific as shown in Figure 1 at a superlattice structure.
Please refer to TiTe shown in Fig. 22-Sb2Te3Superlattice structure anneal 2 minutes under condition of different temperatures after X
Ray diffraction results, it can be seen that the TiTe of deposited2-Sb2Te3In, Sb2Te3There is a partially crystallizable, but crystal grain very little；
After 100 DEG C of heat treatment, Sb2Te3Diffraction peak intensity compared with deposited without significant change, illustrate that grain size does not have significant change；And it is hot
After 200 and 300 DEG C of processing, Sb2Te3Diffraction peak intensity obviously compared with deposited and 100 DEG C of heat treated sample highers, explanation
Sb2Te3Crystal grain is grown up.In this four groups of samples, TiTe2Peak position and peak intensity without significant change, show in TiTe2-
Sb2Te3In superlattice structure, TiTe2It is constantly in crystalline structure, significant change does not occur.The present invention is exactly to utilize TiTe2
This characteristic construct a kind of TiTe2-Sb2Te3And it similar superlattice structure and is formed therewith using such superlattice structure
Self-heating phase-change memory cell.Conventional phase-change material can have the molten state of a transient state, at this time material electricity in phase transition process
Resistance can nearly an order of magnitude at least lower than crystalline resistance, because of heating power W=I2R, in melting, since resistance R drops
Low, heating power can reduce；And the present invention uses multilayered structure, wherein TiTe2It is not involved in phase transformation, in entire phase transition process,
It is constantly in crystalline state, even if Sb2Te3It undergoes phase transition, at this time TiTe2It is maintained as crystalline resistance, i.e., has a perseverance in phase transition process
Fixed R exists, in Sb2Te3When undergoing phase transition melting, material can still go to maintain phase transformation there are one relatively stable heating power, i.e.,
TiTe2Layer plays self heating function, thus can also reduce the power consumption of the phase-change memory cell.And due to TiTe2Material layer is always
In crystalline state, the self-heating phase-change memory cell 1 can be generated during its phase change memory medium 12 is undergone phase transition
Volume change be reduced to it is minimum, so as to avoid in conventional phase change memory part, because phase-change storage material is being undergone phase transition
The variation of process in which materials volume too big the problem of phase transition storage may being caused to fail.Phase-change storage material in the present embodiment
The crystalline resistance of layer is more than 103Ohm, with TiTe2Crystalline resistance value be in the same order of magnitude.
Please refer to Fig. 3 based on TiTe2-Sb2Te3The self-heating phase-change memory cell of superlattices phase-change material is obtained
Resistance and voltage curve.From the figure 3, it may be seen that Set (data write-in) voltages needed when 300 nanosecond and Reset voltages point
It Wei not 1.4V and 2.3V.After pulse width becomes smaller, it can still carry out Set and Reset and operate, but it is electric needed for Set and Reset
Pressure increased.Under 20 nanosecond pulse widths, corresponding Set has risen to 2.5V and 3.3V respectively with Reset voltages.This explanation
Based on TiTe2-Sb2Te3The self-heating phase-change memory cell of superlattice structure has higher crystalline rate, can be in nanosecond number
Magnitude realizes the reversible transition of amorphous state and crystalline state, passes through reversible transition of the phase change memory medium between amorphous state and crystalline state
To realize the write-in and reading of data.Thus, the data write-in of the self-heating phase-change memory cell of this experiment surface present invention
Speed is very fast, can reach nanosecond rank.It should be noted that in this implementation, the self-heating phase-change memory cell is in electricity
Reversible transition of the phase-change storage material layer (phase change memory medium) between amorphous state and crystalline state is realized under impulse action.When
So, in other examples, other mode of excitation are may be based on, for example realize the phase change memory material under the excitation of laser pulse
Reversible transition of the bed of material (phase change memory medium) between amorphous state and crystalline state, specifically no longer illustrates.
Further, the test experiments result of Fig. 4 is please referred to, it can be seen that when Set voltages are 2.3V, traditional GST
(Ge2Sb2Te5) phase change memory device Set speed and Sb2Te3The Set speed of phase change memory device be respectively necessary for 100 nanoseconds and
50 nanoseconds, and the present embodiment based on TiTe2-Sb2Te3The self-heating phase-change memory cell of superlattice structure only needed for 20 nanoseconds,
Therefore it can prove to be based on TiTe2-Sb2Te3The service speed of the self-heating phase-change memory cell of superlattice structure is than routine
GST phase transition storages are fast, than the Sb of the doping type before improvement2Te3Phase transition storage is also much faster.
Please refer to Fig. 5 based on TiTe2-Sb2Te3The repeatable operation time of the self-heating phase-change memory cell of superlattice structure
Number test obtain as a result, from the figure, it can be seen that the present invention based on TiTe2-Sb2Te3The self-heating phase transformation of superlattice structure
Storage unit repeats number of operations and has reached 107Number magnitude, and please continue to refer to Fig. 6 based on TiTe2-Sb2Te3
The comparison of obtained resistance and voltage curve before and after the self-heating phase-change memory cell testing fatigue of superlattice structure.By Fig. 6
It can be seen that before testing fatigue, under the conditions of 300 nanosecond pulse widths, Set and the Reset voltage of device be respectively 1.4V and
2.3V；And the preset test condition of process (such as repetitive operation 107After secondary) in the testing fatigue that carries out afterwards, same 300 nanosecond
Under the conditions of pulsewidth, the Set voltages of device are only reduced to 1.3V, and corresponding Reset voltages are also only reduced to 1.9V.100
Under the conditions of nanosecond pulse width, although Set and Reset voltages are also having reduction after the testing fatigue of preset test condition,
Still in operable range, show the present invention based on TiTe2-Sb2Te3The self-heating phase-change memory cell of superlattice structure
With very long operation lifetime.
It should be noted that, although the experiment of the present embodiment is all based on TiTe2-Sb2Te3The self-heating of superlattice structure
What phase-change memory cell carried out, but the inventors discovered that, in use and TiTe2-Sb2Te3With its of similar superlattice structure
He also shows essentially identical characteristic by the self-heating phase-change memory cell of material preparation, for example, when the self-heating phase transformation is deposited
The composition of the self-heating material layer of the self-heating electrode of storage unit is selected from by TiTe2、TiSe2、TiS2、TaSe2、
MoSe2、TaSe2、SnTe2And TaTe2It is one or more in the group constituted, and the phase of the phase-change memory cell
The composition for becoming storage material layer is selected from by Sb2Te3、Bi2Te3、Sc2Te3、BiSbTe3、Bi2Se3And Sc2Se3The group constituted
When one or more in group, the self-heating phase-change memory cell equally has previously described writing speed fast, work(
Consume it is low, and the advantages that can effectively avoid the heat interference between the adjacent self-heating phase-change memory cell.Certainly, the self-heating
The preferred TiTe of composition of the self-heating material layer of the self-heating electrode of phase-change memory cell2And the phase-change storage material
The preferred Sb of composition of layer2Te3, because the raw material of this two classes composition are easier to obtain, preparation process is also highly developed, because
And it is just easy to prepare required self-heating phase-change memory cell using existing process equipment and material.It is based on for example, preparing
TiTe2-Sb2Te3Ti, Te target co-sputtering and Sb may be used in the self-heating phase-change memory cell of superlattice structure2Te3Alloys target according to
Secondary sputtering is prepared, more specifically, for example, provide a substrate, on the substrate pre-production have lower electrode, with Ti, Te target
Cosputtering mode is deposited on depositing Ti Te on the lower electrode2Self-heating electrode, specific sedimentation time depending on required thickness,
Then Sb is used2Te3Alloys target is in the TiTe2Sb is deposited on self-heating electrode2Te3Phase-change storage material layer, likewise, when deposition
Between depending on required deposition thickness.But it should be recognized that need to be continually fed into purity in whole preparation process be
99.999% Ar gas controls the sequence of growing film by switching target overhead gage.
Embodiment two
As shown in fig. 7, the present invention also provides a kind of self-heating phase change storage structure, the self-heating phase change storage structure packet
An at least laminated construction is included, the laminated construction includes at least one self-heating phase-change memory cell as described in embodiment one
1.To expand the memory capacity of the self-heating phase change storage structure, the laminated construction generally includes multiple institutes being sequentially stacked
State self-heating phase-change memory cell 1, wherein the phase change memory medium 12 in a self-heating phase-change memory cell 1 with
The self-heating electrode 11 in another self-heating phase-change memory cell 1 adjacent thereto is in contact.In the present embodiment, institute
It includes two laminated construction to state self-heating phase change storage structure, two laminated construction laid out in parallel and is provided between each other
Isolated material, for example it is provided with insulating materials.
As an example, the laminated construction includes but is not limited only to 5~20 self-heating phase-change memory cells 1, institute
It states 5~20 self-heating phase-change memory cells 1 to be sequentially stacked, wherein the institute in a self-heating phase-change memory cell 1
State phase change memory medium 12 and 11 phase of self-heating electrode in another self-heating phase-change memory cell 1 adjacent thereto
Contact, more specifically, the phase change memory medium 12 in a self-heating phase-change memory cell 1 be located at it is adjacent thereto another
The surface of the self-heating electrode 11 in the one self-heating phase-change memory cell 1, i.e., the adjacent self-heating phase transformation are deposited
There is the self-heating electrode 11 to be isolated between storage unit 1, therefore the phase of the adjacent self-heating phase-change memory cell 1
Interference will not be generated mutually when undergoing phase transition by becoming storage medium 12, thus can guarantee the entire self-heating phase change memory knot
The stability of structure.The quantity for the self-heating phase-change memory cell 1 that the self-heating phase change storage structure includes is gone back according to need
Can there are other selections, specific structure that can also advanced optimize, and actual device architecture is also intricately more than this, specifically
It is not reinflated.
In conclusion the present invention provides a kind of self-heating phase-change memory cell, including self-heating electrode and with it is described from
The phase change memory medium that heating electrode is connected, the self-heating electrode include at least one layer of self-heating material layer, the phase transformation
Storage medium includes at least one layer of phase-change storage material layer, wherein the self-heating material layer and the phase-change storage material layer
Material it is different, and the self-heating material layer and the phase-change storage material layer include at least one chalcogen.This hair
Bright self-heating phase-change memory cell includes self-heating electrode and phase change memory medium, and self-heating electrode is in phase change memory medium
It is not undergone phase transition during undergoing phase transition and maintains crystalline state always, so as to be carried for entire self-heating phase-change memory cell
For a relatively stable heating power to maintain phase transformation, ensure the self-heating phase-change memory cell with rapid phase transition energy
Also there is low-power consumption while power, and can effectively avoid the heat interference between adjacent self-heating phase-change memory cell；The present invention's
Self-heating phase change storage structure has very fast writing speed, and data holding ability is strong, at the same also have it is low in energy consumption,
The advantages that service life is long.So the present invention effectively overcomes various shortcoming in the prior art and has high industrial exploitation value
Value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (12)
1. a kind of self-heating phase-change memory cell, it is characterised in that：The self-heating phase-change memory cell includes self-heating electrode
And the phase change memory medium being connected with the self-heating electrode, the self-heating electrode include at least one layer of self-heating material
Layer, the phase change memory medium include at least one layer of phase-change storage material layer, wherein the self-heating material layer and the phase transformation
The material of storage material layer is different, and the self-heating material layer and the phase-change storage material layer include at least one sulfur family
Element.
2. self-heating phase-change memory cell according to claim 1, it is characterised in that：The self-heating material layer is located always
In crystalline state, the amorphous reversible transition of crystalline state-can occur for the phase-change storage material layer.
3. self-heating phase-change memory cell according to claim 2, it is characterised in that：The crystalline substance of the phase-change storage material layer
State resistance is more than 103Ohm, and the crystalline state of the crystalline resistance value of the phase-change storage material layer and self-heating material layer electricity
Resistance value is in the same order of magnitude.
4. self-heating phase-change memory cell according to claim 1, it is characterised in that：The combination of the self-heating material layer
The chemical formula of object is MX2, wherein M is metallic element, and X is chalcogen.
5. self-heating phase-change memory cell according to claim 4, it is characterised in that：The combination of the self-heating material layer
Object is selected from by TiTe2、TiSe2、TiS2、TaSe2、MoSe2、TaSe2、SnTe2And TaTe2One kind in the group constituted or
It is a variety of.
6. self-heating phase-change memory cell according to claim 5, it is characterised in that：The group of the phase-change storage material layer
Object is closed to be selected from by Sb2Te3、Bi2Te3、Sc2Te3、BiSbTe3、Bi2Se3And Sc2Se3One kind or more in the group constituted
Kind.
7. self-heating phase-change memory cell according to claim 1, it is characterised in that：The self-heating electrode includes 2~5
The layer self-heating material layer, the phase change memory medium include 5~10 layers of phase-change storage material layer.
8. self-heating phase-change memory cell according to claim 1, it is characterised in that：The self-heating phase-change memory cell
Repeatable number of operations be not less than 107It is secondary.
9. self-heating phase-change memory cell according to claim 1, it is characterised in that：The self-heating phase-change memory cell
Writing speed in nanosecond rank.
10. a kind of self-heating phase change storage structure, it is characterised in that：The self-heating phase change storage structure includes an at least lamination
Structure, the laminated construction include at least one self-heating phase-change memory cell as claimed in any one of claims 1-9 wherein.
11. self-heating phase change storage structure according to claim 10, it is characterised in that：The laminated construction includes multiple
The self-heating phase-change memory cell being sequentially stacked, wherein the phase transformation in a self-heating phase-change memory cell is deposited
Storage media and the self-heating contact electrode in another self-heating phase-change memory cell adjacent thereto.
12. self-heating phase change storage structure according to claim 11, it is characterised in that：The laminated construction include 5~
20 self-heating phase-change memory cells.
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