CN100477318C - Phase change film material of silicon-adulterated sulfur series for phase change memory - Google Patents

Phase change film material of silicon-adulterated sulfur series for phase change memory Download PDF

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CN100477318C
CN100477318C CNB2007101093639A CN200710109363A CN100477318C CN 100477318 C CN100477318 C CN 100477318C CN B2007101093639 A CNB2007101093639 A CN B2007101093639A CN 200710109363 A CN200710109363 A CN 200710109363A CN 100477318 C CN100477318 C CN 100477318C
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film
phase
change
phase change
change thin
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CN101101965A (en
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冯洁
乔保卫
赖云峰
蔡炳初
陈邦明
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Shanghai Jiaotong University
Silicon Storage Technology Inc
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Shanghai Jiaotong University
Silicon Storage Technology Inc
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Abstract

The invention is concerned with the phase change film material containing silicon series cluster subject, that is the silicon group subject alloy TeaSibSb100-(a+b) with the a no lesser than 48 but no more than 60, and the b no less than 8 but no more than 40. The invention has the higher crystalline state resistance and non/crystalline resistance change ratio compare to the Ge2Sb2Te5 phase change film, the lower change ratio of the non/crystalline film thickness and melting point. The memorizer including the Si series sulfur group subject phase change film is with the higher ratio sum of the switch stability and it helps the writing operation current.

Description

The Silicon-contained chalcogenide phase change thin-film material that is used for phase transition storage
The present invention by number of patent application is: 200510028671.X, name of patent application is: " the Silicon-contained chalcogenide phase change thin-film material that is used for phase transition storage ", patent application is artificial: Shanghai Communications University, Silicon Storage Technology, Inc., patent application day is: the patent on August 11st, 2005 is divided an application.
Technical field
What the present invention relates to is a kind of material of microelectronics technology, specifically is a kind of Silicon-contained chalcogenide phase change thin-film material that is used for phase transition storage.
Background technology
The basic principle of phase transition storage technology is to utilize phase change film material as storage medium, phase-change thin film resistivity when amorphous state and crystalline state has very big difference, adopt the electric pulse of programming can make phase-change thin film reversible conversion between amorphous state and crystalline state, thereby make phase-change memory cell reversible transformation between high resistant and low-resistance.And the state of memory cell is non-volatile, and promptly when being set to any one state, even cut off the electricity supply, memory cell still remains the resistance value of this state, unless reset the state of memory cell.Memory cell is limited by the pore of dielectric substance definition, and phase-change thin film is deposited in the pore, and phase-change thin film is connection electrode on the two ends of pore.The electrode contact makes electric current produce Joule heat by this passage and is programmed in this unit, perhaps reads the resistance states of this unit.Utilize phase-change thin film to realize the phase transition storage of information stores, can trace back to 1970, but because the restriction of microelectric technique at that time, do not develop and practical phase transition storage as storage medium.Along with the development of microelectric technique, the phase-change thin film that the someone has proposed to be used for phase transition storage is a chalcogenide alloy, main component Te aGe bSb 100-(a+b), wherein a is smaller or equal to 70%, and b is within 15%～50% scope.Until now, the typical phase-change thin film of phase transition storage all is a chalcogenide alloy Ge-Sb-Te film, and a kind of particularly suitable material is Ge 22Sb 22Te 56(be Ge 2Sb 2Te 5) film.Reset process in the phase transition storage is by electric pulse phase-change thin film to be melted, and form amorphous process, need be than Set process (being crystallization process) more energy, therefore reducing Reset electric current (write current) is the key issue of present phase change memory technology.
Find that through literature search 2003, Samsung company proposed the Ge that nitrogen mixes in the international electronic device meeting of IEEE (IEDM) to prior art 2Sb 2Te 5Film (" Writing current reduction forhigh-density phase-change RAM ", Y.N.Hwang, S.H.Lee, et al.IEDM, 2003, pp893), utilize the nitrogen doped with Ge 2Sb 2Te 5Crystalline state (ON state) resistance that film is higher is realized the better energy transmission in the Reset of device process, thereby reaches the purpose that reduces write-operation current.Because mixing, nitrogen reduced Ge 2Sb 2Te 5The amorphous state of film/crystalline resistance rate of change is used the nitrogen doped with Ge in device 2Sb 2Te 5Though film can reduce write-operation current, but reduced the ON/OFF ratio of device.Phase-change thin film in the device will experience fusing repeatedly in storing process, cooling forms amorphous state, is subjected to thermal crystalline to form the cyclic process of crystalline state rapidly.In this process, the thickness of phase-change thin film can change, if change excessively, will have influence on contacting of phase-change thin film and electrode or other rete, thereby influences the stability of device.Ge commonly used 2Sb 2Te 5Film is bigger in the varied in thickness of amorphous state and crystalline state, is unfavorable for the work that long term device is stable.
Summary of the invention
The objective of the invention is at deficiency of the prior art, a kind of Silicon-contained chalcogenide phase change thin-film material that is used for phase transition storage is provided, make it be used for the storage medium of phase transition storage and phase change disc, both can reduce write-operation current, the ON/OFF ratio of phase transition storage can be improved again, the stability and the cycle life of phase transition storage and phase change disc can be improved simultaneously.
The present invention is achieved by the following technical solutions, and chalcogenide phase change thin-film material of the present invention comprises 3 series:
One enters Te for Si mixes aGe bSb 100-(a+b)(the Te that alloy forms aGe bSb 100-(a+b)) cSi 100-cFilm, wherein: 48≤a≤60,8≤b≤40, the scope of Si doping 100-c is between 1 to 20 atomic percent.
Its two, for the Si element partly replaces Te aGe bSb 100-(a+b)The Te that Ge element in the alloy forms aGe B-cSi cSb 100-(a+b)Alloy firm, wherein: 48≤a≤60,8≤b≤40, the scope of Si replacement amount c can from 1 to 40 atomic percent.
Its three, be chalcogenide alloy Te aSi bSb 100-(a+b), 48≤a≤60,8≤b≤40 wherein.Especially phase change medium Si 22Sb 22Te 56(be Si 2Sb 2Te 5), Si 14Sb 29Te 57(be SiSb 2Te 4), Si 8Sb 33Te 59(be SiSb 4Te 7) film.Just the Si element replaces the Ge element in the Ge-Sb-Te alloy fully, promptly works as c=40, when promptly the Si element all replaces the Ge element, and the Si-Sb-Te alloy material that does not comprise Ge fully of formation.
The present invention contains the method preparation that Si adulterated sulfur series phase-change thin film can adopt many target co-sputterings, and the target that various elements are corresponding different respectively is by applying the composition that different power can be controlled final film on each target.Contain Si adulterated sulfur series phase-change thin film and also can adopt the mode of sputter alloys target to prepare, promptly at first prepare the chalcogenide alloy target of corresponding composition, obtain the film of required composition again by the sputter alloys target.Can also adopt evaporation or electron beam evaporation chalcogenide alloy to prepare and contain Si adulterated sulfur series phase-change thin film, can also carry out other membrane deposition method such as coevaporation to the elements corresponding material and prepare and contain Si adulterated sulfur series phase-change thin film.Si doped with Ge-Sb-Te alloy firm can also be realized by Ge-Sb-Te film intermediate ion is injected Si.
The above-mentioned Silicon-contained chalcogenide phase change thin-film material of the present invention can change the resistance of phase-change thin film by at least one electric pulse, and resistance value can change several magnitude; Can realize reversible transition between phase-change thin film is from the high-impedance state to the low resistance state by electric pulse; Can make phase-change thin film realize resistance value more than 2, stable by height and the width of regulating electric pulse, thereby realize many-valued storage; Can change the reflectivity of phase-change thin film by at least one laser pulse; Can realize reversible transition between the phase-change thin film different reflectivity state by laser pulse.
Silicon-contained chalcogenide phase change thin-film material of the present invention, its ON state (crystalline state) resistivity is than phase change medium Ge commonly used at present 2Sb 2Te 5Film increases by 50% to 8 times, helps to realize the better energy transmission in the Reset of phase transition storage process, thereby reaches the purpose that reduces write-operation current.
Silicon-contained chalcogenide phase change thin-film material of the present invention, when having higher crystalline resistance, its amorphous state resistivity has reached 1.2 * 10 6～3.2 * 10 7M Ω cm is than phase change medium Ge commonly used 2Sb 2Te 5Film has increased by 1.5～36 times.New phase change film material series is than phase change medium Ge commonly used at present 2Sb 2Te 5The amorphous state of film/crystalline resistance rate of change maximum has increased about 11 times, and maximum can improve the ON/OFF of phase transition storage than (being the dynamic range of resistance variations) order of magnitude.Bigger device resistance excursion can better guarantee the reliability that data are read.Bigger device resistance excursion also makes when using many-valued memory technology (multilevel) in phase transition storage, can insert more intermediateness, thereby obtains higher storage density.
Silicon-contained chalcogenide phase change thin-film material of the present invention, when being in crystalline state or amorphous state, its varied in thickness is 1.3～6.1%, less than phase change medium Ge commonly used 2Sb 2Te 5Film (6.8%).Adopt the less phase-change thin film of varied in thickness to help improving the stability and the cycle life of phase transition storage and phase change disc.
Silicon-contained chalcogenide phase change thin-film material of the present invention, its fusing point are 590 ℃～630 ℃, than phase change medium Ge commonly used 2Sb 2Te 5Low 50～10 degree of film.Therefore, in phase transition storage, use the less electric pulse of energy that it is undergone phase transition, thereby reduce the write-operation current of phase transition storage.And in phase change disc, use the less laser pulse of energy, and just can make its phase transformation, help to improve the life-span of CD.
Description of drawings
Fig. 1 is the phase-change memory cell structure schematic diagram.
Fig. 2 is a Si doped with Ge of the present invention 2Sb 2Te 5Film and Ge commonly used 2Sb 2Te 5The resistivity of film and the relation curve of annealing temperature.
Fig. 3 is a Si doped with Ge of the present invention 2Sb 2Te 5Material and Ge commonly used 2Sb 2Te 5The differential thermal analysis of alloy material (DSC) curve chart.
Fig. 4 is Si-Sb-Te film of the present invention and Ge commonly used 2Sb 2Te 5The resistivity of film and the relation curve of annealing temperature.
Fig. 5 is Si-Sb-Te alloy of the present invention and Ge commonly used 2Sb 2Te 5The differential thermal analysis of alloy material (DSC) curve chart.
Fig. 6 is with a routine especially Si of the present invention 2Sb 2Te 5When film is used for structure shown in Figure 1, the relation of its device resistance and employed pulse voltage.
Embodiment
Provide following examples in conjunction with content of the present invention:
As phase transition storage at present commonly used, three of the present invention contain Si adulterated sulfur series phase-change thin film and can be used in as shown in Figure 1 the phase-change memory cell structure as storage medium.Among the figure, 1 is bottom electrode, and 2 for containing Si adulterated sulfur series phase-change thin film, and 3 is top electrode.At least comprising a bottom electrode and a top electrode in the phase-change memory cell, is to contain Si adulterated sulfur series phase-change thin film between upper and lower electrode.Upper and lower electrode can adopt W, the electrode material that integrated circuits such as TiW are commonly used, and in certain embodiments, the area of bottom electrode is less than the area of top electrode, so that better phase-change thin film is heated.Phase-change memory cell is limited by the sidewall spacers that dielectric constitutes.Phase-change memory cell structure can be integrated on the integrated circuit substrate.
In specific embodiment, adopt the SiO of PECVD preparation 2As sidewall spacers, formed the needed aperture of phase-change memory cell by photoetching commonly used, the method for etching; Upper and lower electrode has all adopted the W electrode of sputter preparation.Contain the method preparation that Si adulterated sulfur series phase-change thin film adopts cosputtering, also can adopt other membrane deposition method such as sputter alloys target, evaporation, coevaporation to prepare and contain Si adulterated sulfur series phase-change thin film.
Embodiment 1
Phase-change material series enters Te for Si mixes aGe bSb 100-(a+b)Si doped with Ge-Sb-Te film that alloy forms.Parameter a, the scope of b is to propose about the parameter area of the patent of phase transition storage with reference to S.R.Ovshinsky etc.The Si doped with Ge that Fig. 2 obtains for different Si dopings 2Sb 2Te 5Film and Ge commonly used 2Sb 2Te 5The resistivity of film and the relation curve of annealing temperature.160 ℃ and following temperature, all films are in amorphous state, and film resistor is a high-impedance state, and along with the increase of annealing temperature, film begins crystallization, and film resiativity promptly begins to descend.Behind thin film crystallization, film resistor is in low resistive state.This process heats phase-change thin film by electric pulse in device and realizes, and can realize reversible transformation by applying different electric pulses between high-impedance state and the low resistance state.The Ge that contrast is commonly used 2Sb 2Te 5Film, the Si doped with Ge 2Sb 2Te 5Film has higher crystalline resistance, as previously described the nitrogen doped with Ge 2Sb 2Te 5Film is the same, and higher crystalline resistance helps to realize the better energy transmission in device R eset process, thereby reaches the purpose that reduces write-operation current.And, the nitrogen doped with Ge 2Sb 2Te 5Film has caused reducing of amorphous state/crystalline resistance rate of change, thereby causes the reduction of device ON/OFF ratio.And the Si doped with Ge 2Sb 2Te 5Though its crystalline resistance rate of film increases to some extent, its amorphous state resistivity also has bigger increase, therefore has the Ge of ratio 2Sb 2Te 5The amorphous state that film is slightly high/crystalline resistance rate of change can not reduce the ON/OFF ratio of device.
The Ge that Fig. 3 mixes for Si 2Sb 2Te 5Alloy and Ge commonly used 2Sb 2Te 5The differential thermal analysis of alloy (DSC) curve chart.As can be seen from the figure, along with the increase of Si doping, the Si doped with Ge 2Sb 2Te 5The fusing point of material progressively reduces.In device, adopt low-melting phase-change thin film will make lower write current just can finish the Reset process, thereby reach the purpose that reduces write-operation current.
Device is in the cyclic process of high-impedance state and low resistance state, and phase-change thin film experiences the reversible variation of amorphous state and crystalline state repeatedly, and its thickness can change.The Si of containing adulterated sulfur series film of the present invention and Ge commonly used have been listed in the table 1 2Sb 2Te 5Film thickness of (crystalline state) after sputter attitude (being amorphous state) and 400 ℃ of annealing, and thickness change.As can be seen, Si doped with Ge 2Sb 2Te 5Film contrast Ge 2Sb 2Te 5Film, its amorphous state/crystalline state thickness change slightly reduces.
In specific embodiment, for (the Te of Si doping aGe bSb 100-(a+b)) cSi 100-cFilm, even the doping 100-c of Si reaches～and 45%, the film that is obtained also can undergo phase transition under electric pulse, but the film of its amorphous state resistivity and Si doping 20% is suitable, and its crystalline resistance rate is compared increase to some extent with the film of Si doping 20%, has therefore caused reducing of amorphous state/crystalline resistance rate of change.Simultaneously, bigger Si doping can cause the increase of film crystallization time, and the film crystallization time is from be increased to several microseconds 100 nanoseconds in certain embodiments, and this can reduce the access rate of device greatly, and simultaneously a large amount of Si mixes and also can cause being separated.And the doping 100-c that works as Si is lower than 1%, and the performance comparison Ge-Sb-Te film of film does not obviously change.Take all factors into consideration above factor, the suitable scope of the doping 100-c of Si is 1%～20%.
Table 1
Material Sputter attitude thickness (nm) Thickness (nm) after 400 ℃ of annealing Thickness Variation rate (%)
Ge 2Sb 2Te 5 2049 1910 6.8
4at.％Si-doped Ge 2Sb 2Te 5 2122 2000 5.8
7.2at.％Si-doped Ge 2Sb 2Te 5 1902 1786 6.1
12at.％Si-doped Ge 2Sb 2Te 5 2066 1940 6.1
SiSb 2Te 4 2084 2057 1.3
SiSb 4Te 7 2066 2010 2.7
Si 2Sb 2Te 5 2104 2066 1.8
Embodiment 2
Phase-change material series is that the Si element replaces the Ge element in the Ge-Sb-Te alloy, the Si-Sb-Te alloy firm of formation fully.Fig. 4 is Si-Sb-Te chalkogenide film of the present invention and Ge commonly used 2Sb 2Te 5The resistivity of film and the relation curve of annealing temperature.160 ℃ and following temperature, all films are in amorphous state, and film resistor is a high-impedance state, and along with the increase of annealing temperature, film begins crystallization, and film resiativity promptly begins to descend.Behind thin film crystallization, film resistor is in low resistive state.This process heats phase-change thin film by electric pulse in device and realizes, and can realize reversible transformation by applying different electric pulses between high-impedance state and the low resistance state.Si-Sb-Te alloy firm contrast Ge commonly used 2Sb 2Te 5Film, its amorphous state resistivity has greatly increased, especially Si 2Sb 2Te 5Film, its amorphous state resistivity has reached 3.2 * 10 7M Ω cm, and Ge 2Sb 2Te 5The amorphous state resistivity of film has only 8.8 * 10 5M Ω cm.Contrast Ge 2Sb 2Te 5Film, the crystalline resistance rate of Si-Sb-Te alloy firm has only less increase, therefore has higher amorphous state/crystalline resistance rate of change.In the middle of device, that adopts higher amorphous state/crystalline resistance rate of change contains Si adulterated sulfur series film, the ON/OFF that helps to improve device than and the reliability of data.
Reducing Reset electric current (write current) is the key issue of present phase change memory technology.The Si-Sb-Te alloy firm has higher crystalline resistance, as previously described the nitrogen doped with Ge 2Sb 2Te 5Film is the same, and higher crystalline resistance helps to realize the better energy transmission in device R eset process, thereby reaches the purpose that reduces write-operation current.And, the nitrogen doped with Ge 2Sb 2Te 5Film has caused reducing of amorphous state/crystalline resistance rate of change, thereby causes the reduction of device ON/OFF ratio, and the Si-Sb-Te alloy firm has higher amorphous state/crystalline resistance rate of change, therefore will improve the ON/OFF ratio of device simultaneously.
Fig. 5 is Si-Sb-Te alloy material and Ge commonly used 2Sb 2Te 5The differential thermal analysis of alloy (DSC) curve chart.As can be seen from the figure, the fusing point of Si-Sb-Te alloy material compares Ge 2Sb 2Te 5Alloy has reduced the 45-50 degree.In device, adopt low-melting phase-change thin film will make lower write current just can finish the Reset process, thereby reach the purpose that reduces write-operation current.
Phase-change thin film in the device will experience the process of fusing-amorphous state-crystallization, the i.e. cyclic process of high-impedance state and low resistance state repeatedly in storing process.In this process, the thickness of phase-change thin film can change, if change excessively, will have influence on contacting of phase-change thin film and electrode, thereby influences the stability of device.The Si of containing adulterated sulfur series film of the present invention and Ge commonly used have been listed in the table 1 2Sb 2Te 5Film thickness of (crystalline state) after sputter attitude (being amorphous state) and 400 ℃ of annealing, and thickness change.As can be seen, work as Ge 2Sb 2Te 5Film is after amorphous state becomes crystalline state, and the thickness of film has reduced 6.8%.And the amorphous state of Si-Sb-Te alloy firm/crystalline state thickness change is much smaller than Ge 2Sb 2Te 5Film, especially SiSb 2Te 4The thickness change of film only is 1.3%.Adopt the less phase-change thin film of varied in thickness to help improving the stability of device.
With a routine especially Si of the present invention 2Sb 2Te 5When film was used for structure shown in Figure 1, its device resistance can change under the effect of electric pulse, and Fig. 6 is the relation of the pulse voltage of device resistance and use, in device, can make device reversible transition between high-impedance state and low resistance state by electric pulse.Adopt Si 2Sb 2Te 5The device of film, the difference between its high resistant and the low-resistance is higher than Ge commonly used up to nearly 3 orders of magnitude 2Sb 2Te 5The device of film.As shown in the figure, except high-impedance state and low resistance state, adopt different electric pulses can also make device obtain multiple intermediateness resistance value, thereby in device, realize many-valued storage.Adopt Si 2Sb 2Te 5The device of film is because Si 2Sb 2Te 5Film has higher amorphous state/crystalline resistance rate of change, thereby has the poor of bigger high resistant/low-resistance, therefore can insert more intermediateness between high resistant and low-resistance, can store more data in a memory cell.
Si-Sb-Te alloy firm of the present invention and Ge commonly used have been listed in the table 2 2Sb 2Te 5Film is at the reflectivity of amorphous state and crystalline state and poor (the wavelength 635nm) of reflectivity thereof.In 600～850nm wave-length coverage, poor (contrast) of the reflectivity of Si-Sb-Te film amorphous state/crystalline state compares Ge 2Sb 2Te 5Film slightly descends, but still more than 30%, can be used for phase change disc.And the Si-Sb-Te film compares Ge 2Sb 2Te 5The fusing point of film is low, makes that lower laser power just can make its phase transformation, thereby improves its cycle life; And reducing of the amorphous state of Si-Sb-Te film/crystalline state thickness change can guarantee CD in the course of the work, and contacting between phase change layer and the adjacent dielectric is good, the signal to noise ratio and the useful life that also help to improve CD.
Table 2
Sample Amorphous reflectivity 635nm The reflectivity 635nm of crystalline state Reflectivity contrast 635nm
Ge 2Sb 2Te 5 41％ 66％ 37.9％
SiSb 2Te 4 42％ 63％ 33.3％
SiSb 4Te 7 46％ 66％ 30.3％
Si 2Sb 2Te 5 40％ 59％ 32.2％
Embodiment 3
Ge element and Si element are IV family element, in alloy, has identical chemical valence, therefore elements Si can part and even is all replaced Ge element in the Ge-Sb-Te alloy, when the Si element all replaces the Ge element, has just formed the Si-Sb-Te alloy firm described in the embodiment 2.The Si element partly replaces Te aGe bSb 100-(a+b)The Te that Ge element in the alloy just can form aGe B-cSi cSb 100-(a+b)Alloy firm.With reference to the experimental result of embodiment 1 and embodiment 2 as can be seen, the Si element partly replaces the Ge element still can reach following effect: (1) improves the amorphous state/crystalline resistance rate of change of film, thereby improves the ON/OFF ratio of device.(2) suitably improve the crystalline resistance of film simultaneously, thereby reach the purpose that reduces write-operation current.(3) fusing point of reduction film.(4) amorphous state/crystalline state thickness change of reduction film.All these effects are directly proportional with Si element replacement amount, therefore the Si element partly replaces the character of Ge-Sb-Te film between Ge-Sb-Te film and Si-Sb-Te film, can improve the characteristic of Ge-Sb-Te film to a certain extent, thereby reach the purpose of improving the phase transition storage performance.

Claims (6)

1, a kind of Silicon-contained chalcogenide phase change thin-film material that is used for phase transition storage is characterized in that, is chalcogenide alloy Te aSi bSb 100-(a+b), 48≤a≤60,8≤b≤40 wherein.
2, the Silicon-contained chalcogenide phase change thin-film material that is used for phase transition storage according to claim 1 is characterized in that, is phase change medium Si 22Sb 22Te 56, Si 14Sb 29Te 57, or Si 8Sb 33Te 59Film.
3, the Silicon-contained chalcogenide phase change thin-film material that is used for phase transition storage according to claim 1 and 2 is characterized in that, by the reversible transition between electric pulse realization phase-change thin film is from the high-impedance state to the low resistance state.
4, the Silicon-contained chalcogenide phase change thin-film material that is used for phase transition storage according to claim 1 and 2, it is characterized in that, make phase-change thin film realize resistance value more than 2, stable by height and the width of regulating electric pulse, thereby realize many-valued storage.
5, the Silicon-contained chalcogenide phase change thin-film material that is used for phase transition storage according to claim 1 and 2 is characterized in that, changes the reflectivity of phase-change thin film by at least one laser pulse.
6, the Silicon-contained chalcogenide phase change thin-film material that is used for phase transition storage according to claim 1 and 2 is characterized in that, by the reversible transition between each reflectivity state of laser pulse realization phase-change thin film.
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US8809829B2 (en) * 2009-06-15 2014-08-19 Macronix International Co., Ltd. Phase change memory having stabilized microstructure and manufacturing method
CN101924180A (en) * 2010-05-13 2010-12-22 中国科学院上海微系统与信息技术研究所 Antimony-rich Si-Sb-Te sulfur group compound phase-change material for phase change memory
CN102110773A (en) * 2010-11-09 2011-06-29 中国科学院上海微系统与信息技术研究所 Silicon antimony tellurium composite phase-change material
CN102534479B (en) * 2010-12-16 2013-09-11 中国科学院上海微系统与信息技术研究所 Microcrystalline Si-SbxTe1-x composite phase change material and preparation method thereof
CN102130298B (en) * 2011-01-19 2013-05-01 中国科学院上海微系统与信息技术研究所 Si-Sb-Te phase change material for phase change storage
CN108597558B (en) * 2018-04-23 2020-10-20 中国科学院上海微系统与信息技术研究所 System and method for optimizing write operation current of phase change memory
CN110931635B (en) * 2019-10-28 2021-09-14 华中科技大学 Low-density-change superlattice phase change film, phase change memory and preparation method of phase change film
CN113724759B (en) * 2021-09-01 2023-07-14 哈尔滨工程大学 Optical fiber memristor unit based on evanescent field

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