CN109904291B - Spinning electronic device and preparation method and regulation and control method thereof - Google Patents
Spinning electronic device and preparation method and regulation and control method thereof Download PDFInfo
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Abstract
The invention discloses a spin electronic device and a preparation method and a regulation method thereof, wherein the spin electronic device comprises a substrate and is stacked on the surface of the substrate from bottom to top: the LED component layer, the barrier layer, the ferromagnetic material layer and the two-dimensional outer half metal layer; wherein the two-dimensional outer half-metal layer is selected from MoTe2、WTe2、PtTe2And TaTe2One of (1); the ferromagnetic material layer is selected from one of CoFeB alloy, Co-Ni multilayer film, Co-Tb alloy and Co-Gd alloy, and the barrier layer is selected from one of MgO and Al-O. The two-dimensional epi-metal layer and the ferromagnetic material layer are used as the spin injection end, and the conversion of current-spin current is realized by utilizing the spin orbit coupling effect of the two-dimensional epi-metal, so that the magnetic moment of the ferromagnetic layer in the spin injection end is turned over by current driving through the spin orbit torque effect, the spin state of injected electrons is regulated without an external magnetic field, and the luminous polarization state of the spin light-emitting diode is regulated.
Description
Technical Field
The invention relates to the field of spintronics and semiconductor devices, in particular to a spintronic device and a preparation method and a regulation and control method thereof.
Background
In the course of the development and development of spintronics in the last 30 years, a series of new materials, new structures and new physical effects are continuously discovered, so that the research results of spintronics are greatly enriched, and the physical basis for designing and researching some novel spintronics material structures is promoted, thereby promoting the rapid development and progress of information science and technology. Spin-Orbit Torque (SOT) has been a hot spot in the field of spintronics, because this effect has been proven to be an effective means for achieving magnetic moment switching with current drive in a zero magnetic field, providing a physical basis for the development of low power consumption spintronics devices, and recently forming a new research direction in the field of spintronics, namely "spintronics".
Spintronics is also a popular field in recent years as one of the emerging important disciplines in condensed state physics, and its spintronic device. The method has the advantages of less consumption, high speed, high integration density and the like, and is expected to play an important role in the development of next-generation electronic devices. The Giant Magnetoresistance (GMR) and Tunneling Magnetoresistance (TMR) effects of spintronics are widely used in various types of commercial magnetic memories. Various new electron spin devices, such as spin light emitting diodes, have also been extensively studied. Related studies of spintronics will also be considered in a sense to encompass studies of injection of spins, manipulation of spins, spin transport, and spin detection.
However, most of the current people use magnetic field for spin control, which causes the spin electronic components to have the disadvantages of large energy consumption, large volume, high heat and the like. Therefore, how to regulate the electron spin in a more energy-efficient manner becomes one of the challenges in developing a new generation of spintronic devices. The Spin-light emitting diode (Spin-LED) generally uses a magnetic field to regulate electron Spin injection, and the application is not simple enough due to the need of an external magnetic field.
Disclosure of Invention
The invention aims to overcome the defects of spin regulation in the prior art, and provides a spin electronic device, a preparation method and a regulation method thereof, which can achieve the effect of regulating and controlling injected electrons without an external magnetic field and can effectively carry out spin injection.
In order to achieve the above object, in a basic embodiment, the present invention provides a spintronic device comprising a substrate, and stacked on a surface of the substrate from bottom to top:
an LED component layer;
a barrier layer;
a layer of ferromagnetic material, and
a two-dimensional epi-semimetal layer;
wherein the two-dimensional outer half-metal layer is selected from MoTe2、WTe2、PtTe2And TaTe2One of (1); the ferromagnetic material layer is selected from one of CoFeB alloy, Co-Ni multilayer film, Co-Tb alloy and Co-Gd alloy, and the barrier layer is selected from one of MgO and Al-O.
In a preferred embodiment, the two-dimensional outer semimetal layer is MoTe2、WTe2Or PtTe2One kind of (1).
In a preferred embodiment, the ferromagnetic material layer is a CoFeB alloy or a Co — Ni multilayer film.
In a preferred embodiment, the barrier layer is MgO.
In a preferred embodiment, the thickness of the two-dimensional outer half metal layer is 1 to 60nm, the thickness of the ferromagnetic material layer is 0.8 to 10nm, and the thickness of the barrier layer is 1 to 3 nm.
In a preferred embodiment, the thickness of the two-dimensional outer half metal layer is 1 to 6nm, the thickness of the ferromagnetic material layer is 1.2 to 6nm, and the thickness of the barrier layer is 2.5 to 3 nm.
In a preferred embodiment, the LED building block layer is selected from LEDs made of GaAs quantum wells.
In a preferred embodiment, the LED composed of GaAs quantum wells is formed by stacking a P-type GaAs substrate surface from bottom to top: the semiconductor device comprises a P-type GaAs buffer region, a P-type GaAs layer, an I-type InGaAs quantum well layer, an I-type GaAs layer and an N-type GaAs layer.
In a preferred embodiment, the thickness of each of the P-type GaAs substrate, the P-type GaAs layer, the I-type GaAs layer and the N-type GaAs layer is 30-100 nm; the thickness of the P-type GaAs buffer region is 300-800 nm, and the thickness of the I-type InGaAs quantum well layer is 3-15 nm.
In a preferred embodiment, the substrate is selected from the group consisting of GaAs, Si, SiO2One of a/Si sheet, a mica sheet, a quartz sheet and sapphire.
The second aspect of the present invention provides a method for manufacturing the above-mentioned spintronic device, so as to obtain a spintronic device using two-dimensional peril semimetal and ferromagnetic material layers as spin injection terminals.
To achieve this object, in a basic embodiment, the present invention provides a method for producing the above-described spintronic device, comprising the steps of:
growing an LED component layer on the substrate layer by a molecular beam epitaxy method;
growing a barrier layer on the LED component layer by a magnetron sputtering coating method or a molecular beam epitaxy method;
growing a ferromagnetic material layer on the barrier layer by a magnetron sputtering coating method; and
and growing a two-dimensional outer half metal layer on the ferromagnetic material layer by adopting a method selected from a molecular beam epitaxy method, a magnetron sputtering coating method and a chemical vapor deposition method.
In another aspect, the present invention provides a method for controlling the above spintronic device, comprising: current flows on the surface of the two-dimensional epitaxial half-metal layer to obtain electrons with downward spin, the electrons with downward spin act with a vertical magnetic moment in the ferromagnetic material layer, and the magnetic moment of the ferromagnetic material layer is turned over to realize the conversion of current-spin current.
Through the technical scheme, the Spin injection end is driven by using the current of Spin Orbit Torque (SOT) effect, the two-dimensional ex-situ half metal and the ferromagnetic material layer are used as the Spin injection end, the conversion of current-Spin current can be realized by using the SOT effect of the ex-situ half metal, the Spin transfer Torque generated by the unbalanced Spin current accumulated by the two-dimensional ex-situ half metal charge-Spin conversion mechanism acts on the vertical magnetic moment in the ferromagnetic material layer based on the SOT effect under a zero magnetic field, and the magnetic moment of the ferromagnetic material layer is inverted. The polarized electrons are diffused in the LED component layer and then are combined with the holes, and the polarized light of the corresponding polarization state is emitted according to the quantum transition selection rule. The invention can achieve the effect of regulating and controlling injected electrons without an external magnetic field, can effectively carry out spin injection, does not need an external magnetic field compared with the prior art, and is more simplified.
Drawings
FIG. 1 is a schematic structural view of a spintronic device according to an embodiment of the present invention;
fig. 2-3 are magneto-optical kerr test characterization diagrams of spintronic devices according to embodiments of the present invention.
Description of the reference numerals
The LED structure comprises a 1-two-dimensional outer half metal layer, a 2-ferromagnetic material layer, a 3-barrier layer, a 4-LED component layer, a 4.1-N type GaAs layer, a 4.2-I type GaAs layer, a 4.3-I type InGaAs quantum well layer, a 4.4-I type GaAs layer, a 4.5-P type GaAs layer, a 4.6-P type GaAs buffer region and a 5-P type GaAs substrate (base body).
Detailed Description
In order to better understand the technical solutions, the technical solutions of the present application are described in detail with specific embodiments below, and it should be understood that the specific features in the embodiments and examples of the present application are detailed descriptions of the technical solutions of the present application, but not limitations of the technical solutions of the present application, and the technical features in the embodiments and examples of the present application may be combined with each other without conflict. It should be understood that the term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
The endpoints of the ranges and any values disclosed herein are not limited to the precise range or value, and such ranges or values should be understood to encompass values close to those ranges or values. For ranges of values, between the endpoints of each of the ranges and the individual points, and between the individual points may be combined with each other to give one or more new ranges of values, and these ranges of values should be considered as specifically disclosed herein.
TMDs (two-dimensional transition metal sulfides) have atomic-scale thickness, direct band gap, strong spin-orbit coupling and broad electronic properties. Whether current regulation electron Spin injection can be carried out or not is combined with the thin, light-transmitting and strong Spin-orbit coupling of a two-dimensional material TMDs (two-dimensional transition metal sulfides) to be applied to the Spin-LED, and the invention concept of the application is formed.
The embodiment of the invention provides a spin electronic device, which comprises a substrate and a substrate, wherein the substrate is laminated from bottom to top on the surface of the substrate:
an LED component layer;
a barrier layer;
a layer of ferromagnetic material, and
a two-dimensional epi-semimetal layer;
wherein the two-dimensional outer half-metal layer is selected from MoTe2、WTe2、PtTe2Middle TaTe2One of (1); the ferromagnetic material layer is selected from one of CoFeB alloy, Co-Ni multilayer film, Co-Tb alloy and Co-Gd alloy, and the barrier layer is selected from one of MgO and Al-O.
The two-dimensional Weier half-metal layer is made of two-dimensional material with strong spin orbit coupling or topological structure, mainly two-dimensional Weier metal MoTe2、WTe2、PtTe2Or TaTe2They have a topological electronic structure; and is thin, transparent and has strong Spin Orbit Coupling (SOC); in addition, the current density (meaning power consumption) required by the current-driven magnetization switching of the two-dimensional epi-semimetal layer based on the SOT is possibly lower than that in a topological insulator/ferromagnetic material, and the like, so that the effect of regulating and controlling injected electrons without an external magnetic field can be achieved, and spin injection can be effectively carried out.
The ferromagnetic material layer is selected from CoFeB alloy, Co-Ni multilayer film, Co-Tb alloy or Co-Gd alloy, which are magnetic materials with vertical anisotropy, have magnetic moment in the vertical direction without an external magnetic field, and have large spin polarizability and high circularly polarized light polarizability.
The thickness of the two-dimensional outer half metal layer is preferably 1-60 nm, the thickness of the ferromagnetic material layer is preferably 0.8-10 nm, and the thickness of the barrier layer is preferably 1-3 nm.
The LED member layer may be an LED made of a GaAs quantum well, and in a preferred embodiment, the LED made of a GaAs quantum well is formed by stacking, from bottom to top, on a P-type GaAs substrate surface (base): the semiconductor device comprises a P-type GaAs buffer region, a P-type GaAs layer, an I-type InGaAs quantum well layer, an I-type GaAs layer and an N-type GaAs layer. The LED structure is a structure with an InGaAs Quantum Well (QW) as a light emitting area, and high electroluminescence polarizability can be observed at room temperature.
The above-mentioned matrix material can be selected from conventional materials, such as: selected from GaAs chip, Si chip, SiO2One of a/Si sheet, a mica sheet, a quartz sheet and sapphire.
The embodiment of the invention also provides a preparation method of the spintronic device, which comprises the following steps:
growing an LED component layer on the substrate layer by a molecular beam epitaxy method;
growing a barrier layer on the LED component layer by a magnetron sputtering coating method or a molecular beam epitaxy method;
growing a ferromagnetic material layer on the barrier layer by a magnetron sputtering coating method; and
and growing a two-dimensional outer half metal layer on the ferromagnetic material layer by adopting a method selected from a molecular beam epitaxy method, a magnetron sputtering coating method and a chemical vapor deposition method.
The embodiment of the invention utilizes the current to flow on the two-dimensional outer half metal layer, and the two-dimensional outer half metal layer has stronger spin orbit coupling and higher charge-spin conversion efficiency, so that the unbalanced spin current accumulated by a charge-spin conversion mechanism generates spin transfer torque to act with the vertical magnetic moment in the ferromagnetic material layer, and the magnetic moment of the ferromagnetic material layer is overturned. Therefore, the magnetic moment of the spin injection end driven by the current can be turned over, and the aim of regulating and controlling the spin state of injected electrons without an external magnetic field is achieved to regulate and control the luminous polarization state of the spin light-emitting diode.
The invention will be described in detail below with reference to the drawings and specific embodiments. The materials used in the examples are commercially available.
Example 1
As shown in fig. 1, embodiment 1 of the present invention provides a spintronic device, including a substrate 5, and stacked on a surface of the substrate from bottom to top: an LED component layer 4, a barrier layer 3, a ferromagnetic material layer 2 and a two-dimensional outer half metal layer 1;
wherein the two-dimensional outer half metal layer 1 is MoTe2(ii) a The ferromagnetic material layer 2 is a CoFeB alloy, and the barrier layer 3 is MgO.
The thickness of the two-dimensional epitaxial half-metal layer 1 is 3nm, the thickness of the ferromagnetic material layer 2 is 1.2nm, and the thickness of the barrier layer 3 is 2.5 nm.
The LED member layer 4 is formed by laminating, from bottom to top, on the surface of the base 5: p-type GaAs buffer region 4.6, P-type GaAs layer 4.5, I-type GaAs layer 4.4, I-type InGaAs quantum well layer 4.3, I-type GaAs layer 4.2 and N-type GaAs layer 4.1.
The substrate 5 is a P-type GaAs substrate.
The preparation method of the spintronic device comprises the following steps:
(1) a molecular beam epitaxy method is adopted, a furnace filled with various required components is used for heating to generate steam under the condition of ultrahigh vacuum, and after the steam is collimated by a small hole, a molecular beam or an atomic beam is formed and then is directly sprayed on a single crystal substrate with lower temperature. By scanning the substrate in the direction of the molecular beam, molecules or atoms can grow on the substrate in the lattice arrangement of the substrate to form a thin film, and each of the LED component layers 4, such as GaAs-based, InAs-based, etc., can be sequentially grown layer by layer.
(2) Growing a magnetic metal CoFeB alloy (a ferromagnetic material layer 2) and a barrier layer 3(MgO) on the LED component layer 4 by a magnetron sputtering film plating machine; the method specifically comprises the following steps: firstly, the ultrahigh vacuum magnetron sputtering equipment is utilized to vacuumize until the vacuum degree is 5 multiplied by 10-7After the sputtering, sputtering is performed. The pressure of high-purity argon gas is 0.07 Pa during sputtering; the sputtering power is 120 watts; sample holder rotation rate: 20 rmp; growth temperature: room temperature; and (3) growth time: film thickness/growth rate;
(3) two-dimensional materials (TMDS two-dimensional transition metal sulfide and two-dimensional epi-semimetal MoTe) by Chemical Vapor Deposition (CVD) in a super-vacuum chamber2) Grown on the layer 2 of ferromagnetic material.
The spintronic device of the embodiment is based on a two-dimensional material with strong Spin Orbit Coupling (SOC), and a Spin-emitting diode (Spin-LED) at a Spin injection end is driven by a current of Spin Orbit Torque (SOT) effect. The specific method for regulating and controlling luminescence comprises the following steps: with a novel two-dimensional material (two-dimensional exol semimetal MoTe)2) And a ferromagnetic material (CoFeB) is used as a spin injection end, a forward (or reverse) current is given on the two-dimensional material, because spin-orbit coupling of electrons in the two-dimensional material is split, a part of electron spins upwards and a part of electron spins downwards, and the electrons with the downward spins react with a vertical magnetic moment in the lower ferromagnetic layer, namely, the magnetic moment of the lower ferromagnetic layer is inverted by spin-orbit torque (SOT) of the novel two-dimensional material, so that current-spin current conversion can be realized, and then the magnetic moment is inverted under a zero magnetic field based on current driving of the spin-orbit torque (SOT) effect. The injected electrons are polarized, having a polarization direction that is vertically up or down. The thus polarized electrons diffuse to type-I In through the N-type GaAs layer0.1Ga0.9The As quantum well is recombined with the hole from the P-type GaAs layer, and polarized light with a certain polarization degree is emitted according to the quantum transition selection rule.
Example 2
Similarly to the embodiment, embodiment 2 of the present invention provides a spintronic device, including a substrate 5, and stacked on the surface of the substrate 5 from bottom to top: an LED component layer 4, a barrier layer 3, a ferromagnetic material layer 2 and a two-dimensional outer half metal layer 1;
wherein the two-dimensional outer half-metal layer 1 is WTE2(ii) a The ferromagnetic material layer 2 is a Co-Ni multilayer film, and the barrier layer 3 is Al-O.
The thickness of the two-dimensional epitaxial half-metal layer 1 is 3nm, the thickness of the ferromagnetic material layer 2 is 6nm, and the thickness of the barrier layer 3 is 2.5 nm. The height of the layers in fig. 1 does not represent a thickness trend.
The preparation method of the spintronic device comprises the following steps:
(1) each of the above-described LED member layers 4 is grown in a super vacuum chamber by MBE (molecular beam epitaxy) method in a stacked manner;
(2) a magnetic metal Co — Ni (ferromagnetic material layer 2) and a barrier layer (Al — O) were grown on the above-described LED member layer 4 by a molecular beam epitaxy method.
(3) A novel two-dimensional material (TMDS two-dimensional transition metal sulfide and two-dimensional epi-semimetal WTE) is coated in a super-vacuum chamber by a magnetron sputtering coating method2) Grown on the layer 2 of ferromagnetic material.
Example 3
Similarly to embodiment 1, embodiment 3 of the present invention provides a spintronic device including a base 5, and a layer of: an LED component layer 4, a barrier layer 3, a ferromagnetic material layer 2 and a two-dimensional outer half metal layer 1;
wherein the two-dimensional outer half metal layer 1 is PtTe2(ii) a The ferromagnetic material layer 2 is made of Co-Gd alloy, and the barrier layer 3 is made of Al-O.
The thickness of the two-dimensional epitaxial half-metal layer 1 is 6nm, the thickness of the ferromagnetic material layer 2 is 6nm, and the thickness of the barrier layer 3 is 1 nm.
The preparation method of the spintronic device comprises the following steps:
(1) each of the above-described LED member layers 4 is grown in a super vacuum chamber by MBE (molecular beam epitaxy) method in a stacked manner;
(2) a magnetic metal Co-Gd alloy (ferromagnetic material layer 2) and a barrier layer (Al-O) were grown on the LED member layer 4 by a magnetron sputtering film growth method.
(3) Two-dimensional materials (TMDS two-dimensional transition metal sulfide and two-dimensional epi-semimetal PtTe) are prepared by molecular beam epitaxy method in an ultra-vacuum chamber2) Grown on the layer 2 of ferromagnetic material.
Example 4
The spintronic device of the present embodiment is different from that of embodiment 3 in that:
wherein the two-dimensional outer half metal layer 1 is TaTe2(ii) a The ferromagnetic material layer 2 is made of Co-Tb alloy, and the barrier layer 3 is made of Al-O.
The thickness of the two-dimensional epitaxial half-metal layer 1 is 20nm, the thickness of the ferromagnetic material layer 2 is 10nm, and the thickness of the barrier layer 3 is 3 nm.
Example 5
The spintronic device of the present embodiment is different from that of embodiment 1 in that:
the thickness of the two-dimensional epitaxial half-metal layer 1 is 40nm, the thickness of the ferromagnetic material layer 2 is 10nm, and the thickness of the barrier layer 3 is 3 nm.
Example 6
The spintronic device of the present embodiment is different from that of embodiment 2 in that:
the thickness of the two-dimensional epitaxial half-metal layer 1 is 60nm, the thickness of the ferromagnetic material layer 2 is 6nm, and the thickness of the barrier layer 3 is 3 nm.
Test example
Under zero magnetic field, the magnetic moment driven by the current based on the spin orbit torque effect in the spin injection end is reversed. The spintronic devices prepared in the above examples 1 to 6 were subjected to an unbalanced spin current accumulated by a two-dimensional epi-semimetal charge-spin conversion mechanism in a spin injection end to generate a spin transfer torque to act on a perpendicular magnetic moment in a ferromagnetic material layer, and the magnetic moment of the ferromagnetic material layer was subjected to an inversion test.
The specific test steps are as follows:
as shown in FIG. 1, in the first layer, a current density of 9 × 10 is applied to the right in the direction of the arrow6A/cm2The pulse width is 30 mus pulse current, so that the magnetic moment direction of the ferromagnetic layer is turned upwards (the magneto-optical Kerr test represents that the black magnetic moment is upward, as shown in figure 2); as shown in FIG. 1, in the first layer, a current density of 9.5 × 10 was applied to the left in the direction of the arrow6A/cm2And the pulse width is 30 mus of pulse current, so that the magnetic moment direction of the magnetic layer is downwards turned (the magneto-optical Kerr test is characterized, and white is the magnetic moment downwards, as shown in figure 3). Obtaining the spin injection end data, and obtaining the effect of the spin transfer torque generated by the non-equilibrium spin current accumulated by the charge-spin conversion mechanism on the vertical magnetic moment in the ferromagnetic material layer without a magnetic field, wherein the magnetic moment of the ferromagnetic material layer is inverted, and the inversion current density is 9.5 x 106A/cm2. The spin electron device has the effect that the magnetic moment of a spin injection end driven by current is reversed, and the effect of regulating and controlling the luminous polarization state of a spin light-emitting diode can be achieved without an external magnetic field to regulate and control the spin state of injected electrons.
The spin state of the injected electrons corresponding to the magnetic moments of the two spin injection ends regulated and controlled in the steps is generated by an Electroluminescence (EL) system based on photons in a carrier compounding process, the generated spin polarized light passes through a quarter glass sheet through focusing collimation, then enters a monochromator through a line polaroid, is imaged on a CCD, the spin state of the injected electrons is regulated and controlled without an external magnetic field to realize the effect of regulating and controlling the polarization state of the light emission of the spin light-emitting diode, and two circular polarization states of the light emission are realized.
The preferred embodiments of the present invention have been described above in detail, but the present invention is not limited thereto. Within the scope of the technical idea of the invention, many simple modifications can be made to the technical solution of the invention, including combinations of various technical features in any other suitable way, and these simple modifications and combinations should also be regarded as the disclosure of the invention, and all fall within the scope of the invention.
Claims (10)
1. A spintronic device, characterized in that: the device comprises a substrate and is formed by stacking the following components on the surface of the substrate from bottom to top:
an LED component layer;
a barrier layer;
a layer of ferromagnetic material, and
a two-dimensional epi-semimetal layer;
wherein the two-dimensional outer half-metal layer is selected from MoTe2、WTe2、PtTe2And TaTe2One of (1); the ferromagnetic material layer is selected from one of CoFeB alloy, Co-Ni multilayer film, Co-Tb alloy and Co-Gd alloy, and the barrier layer is selected from one of MgO and Al-O.
2. The spintronic device of claim 1, wherein: the two-dimensional outer half metal layer is MoTe2、WTe2And PtTe2One of (1); the ferromagnetic material layer is a CoFeB alloy or a Co-Ni multilayer film; the barrier layer is MgO.
3. A spintronic device according to claim 1 or 2, characterized in that: the thickness of the two-dimensional outer half metal layer is 1-60 nm, the thickness of the ferromagnetic material layer is 0.8-10 nm, and the thickness of the barrier layer is 1-3 nm.
4. The spintronic device of claim 3, wherein: the thickness of the two-dimensional outer half metal layer is 1-6 nm, the thickness of the ferromagnetic material layer is 1.2-6 nm, and the thickness of the barrier layer is 2.5-3 nm.
5. The spintronic device of claim 1, wherein: the LED component layer is an LED formed by GaAs quantum wells.
6. The spintronic device of claim 5, wherein: the LED composed of the GaAs quantum well is arranged on the surface of the P-type GaAs substrate in a stacking mode from bottom to top: the semiconductor device comprises a P-type GaAs buffer region, a P-type GaAs layer, an I-type InGaAs quantum well layer, an I-type GaAs layer and an N-type GaAs layer.
7. The spintronic device of claim 6, wherein: the thicknesses of the P-type GaAs substrate, the P-type GaAs layer, the I-type GaAs layer and the N-type GaAs layer are respectively 30-100 nm; the thickness of the P-type GaAs buffer region is 300-800 nm, and the thickness of the I-type InGaAs quantum well layer is 3-15 nm.
8. The spintronic device of claim 1, wherein: the substrate is selected from GaAs sheet, Si sheet and SiO2One of a/Si sheet, a mica sheet, a quartz sheet and sapphire.
9. A method of manufacturing a spintronic device according to any one of claims 1 to 8, characterized in that: the method comprises the following steps:
growing an LED component layer on the substrate layer by a molecular beam epitaxy method;
growing a barrier layer on the LED component layer by a magnetron sputtering coating method or a molecular beam epitaxy method;
growing a ferromagnetic material layer on the barrier layer by a magnetron sputtering coating method; and
and growing a two-dimensional outer half metal layer on the ferromagnetic material layer by adopting a method selected from a molecular beam epitaxy method, a magnetron sputtering coating method and a chemical vapor deposition method.
10. A method of regulating a spintronic device according to any of claims 1 to 8, characterized in that: the method comprises the following steps: current flows on the surface of the two-dimensional epitaxial half-metal layer to obtain electrons with downward spin, the electrons with downward spin act with a vertical magnetic moment in the ferromagnetic material layer, and the magnetic moment of the ferromagnetic material layer is turned over to realize the conversion of current-spin current.
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| CN110828657A (en) | 2019-11-14 | 2020-02-21 | 中国科学院半导体研究所 | Spin valve and spintronic device comprising the same |
| RU2746849C1 (en) * | 2020-08-27 | 2021-04-21 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" | Method of manufacturing a magneto-resistive spin led (options) |
| RU2748909C1 (en) * | 2020-08-27 | 2021-06-01 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" | Magnetoresistive spin led |
| CN111816738B (en) * | 2020-09-14 | 2021-04-06 | 深圳第三代半导体研究院 | GaN-based LED light source and preparation method thereof |
| CN113030016B (en) * | 2021-03-04 | 2022-08-30 | 湖南理工学院 | Weak measurement-based method for identifying type of Wilson semimetal and measuring inclination of Wilson cone |
| CN113161478B (en) * | 2021-03-08 | 2022-08-16 | 湖北大学 | Artificial intelligence-based spin electronic sound recognition device and preparation method and application thereof |
| CN114015983B (en) * | 2021-11-04 | 2022-06-07 | 之江实验室 | Bulk-perpendicular-anisotropy ferrimagnetic alloy film and preparation method thereof |
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| CN102136535A (en) * | 2010-12-23 | 2011-07-27 | 中国科学院半导体研究所 | High-polarizability spinning injection and detection structure |
| CN105308683B (en) * | 2013-03-28 | 2018-03-13 | 英特尔公司 | High stability electronic spin memory |
| CN203800069U (en) * | 2014-01-28 | 2014-08-27 | 苏州强明光电有限公司 | Spin optoelectronic device |
| CN103779463A (en) * | 2014-01-28 | 2014-05-07 | 苏州强明光电有限公司 | Spin-photoelectron device and spin injection method thereof |
| CN105702853B (en) * | 2016-03-04 | 2019-05-21 | 北京航空航天大学 | A kind of spin-transfer torque magnetic cell |
| CN206564268U (en) * | 2016-08-25 | 2017-10-17 | 天津天星电子有限公司 | One kind spin opto-electronic device |
| CN108010549B (en) * | 2017-12-04 | 2021-03-16 | 西安交通大学 | Self-rotating polarized current generator and magnetic device thereof |
-
2019
- 2019-02-13 CN CN201910112795.8A patent/CN109904291B/en not_active Expired - Fee Related
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