CN109904291A - A kind of spin electric device and preparation method thereof, regulation method - Google Patents
A kind of spin electric device and preparation method thereof, regulation method Download PDFInfo
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Abstract
The invention discloses a kind of spin electric devices and preparation method thereof, regulation method, and above-mentioned spin electric device includes matrix, and be stacked from the bottom to top in matrix surface: LED component layer, barrier layer, ferromagnetic material layers and the outer that semimetal layer of two dimension；Wherein, your outer semimetal layer of the two dimension is selected from MoTe2、WTe2、PtTe2And TaTe2One of；The ferromagnetic material layers are selected from one of CoFeB alloy, Co-Ni multilayer film, Co-Tb alloy and Co-Gd alloy, and the barrier layer is selected from one of MgO, Al-O.The present invention using outside two dimension your semimetal layer and ferromagnetic material layers as the injection end that spins, by realizing the conversion of electric current-spin current using your outer semimetallic Quantum geometrical phase effect of two dimension, to realize the overturning of ferromagnetic layer magnetic moment in electric current driving spin injection end using spin(-)orbit torque effect, reach without external magnetic field and regulate and control the spin state of injection electronics, to realize the luminous polarized state of regulation spinning LED.
Description
Technical field
The present invention relates to spintronics and field of semiconductor devices, and in particular to a kind of spin electric device and its preparation
Method, regulation method.
Background technique
In nearly 30 years formation and development courses of spintronics, a series of new materials, new construction and new physics effect
Constantly discover, be greatly enriched spintronics research achievement, while promoting design and some novel spins electricity of research
Son learns the physical basis of material structure, to push the fast development and progress of information science technology.Spin(-)orbit torque
(Spin-Orbit Torque, SOT) is always the hot spot of area of Spintronics research, because the effect has proved to be real
Using the effective means of electric current driving Magnetic moment reversal under existing zero magnetic field, the exploitation for low-power consumption spintronics devices provides object
Reason basis, and it has been recently formed research direction new in entitled " spin(-)orbit electronics " area of Spintronics.
For spintronics as one of the emerging important subject in Condensed Matter Physics, spin electric device is also in recent years
The popular domain come.It has many advantages, such as consumption less, speed is fast, high density of integration, be expected to the development in next-generation electronic device
In play important role.As the giant magnetoresistance (GMR) of spintronics is widely used in tunnel magnetoresistive (TMR) effect
In various commercial magnetic storage.And various novel electron self-spining devices, as spinning LED has also obtained widely grinding
Study carefully.The correlative study of spintronics in a sense by it is also assumed that be around to the injection of spin, spin manipulation,
The research of spin transport and spin detection.
However people are more by magnetic field, this makes spinning electron component, and there are energy for the regulation of spin at present
The disadvantages of consumption is big, volume is big, heat is high is also easy to influence the spin of adjacent area with magnetic field regulation spin direction, is increased and is
System error rate.Therefore, electron spin how is regulated and controled with the mode of more efficiency becomes exploitation spin electric device of new generation
One of challenge.Spinning LED (Spin-LED) universal at present substantially using magnetic field regulation electron spin injection, needs
Wanting externally-applied magnetic field, this is upper not easy enough in application.
Summary of the invention
The purpose of the invention is to overcome above-mentioned spin regulation defect of the existing technology, a kind of spinning electron is provided
Device and preparation method thereof, regulation method, can achieve no external magnetic field to regulate and control the effect of injection electronics, and can be effectively carried out
Spin injection.
To achieve the goals above, in the embodiment on basis, one aspect of the present invention provides a kind of spin electric device,
Including matrix, and be stacked from the bottom to top in matrix surface:
LED component layer；
Barrier layer；
Ferromagnetic material layers, and
Two-dimentional outer that semimetal layer；
Wherein, your outer semimetal layer of the two dimension is selected from MoTe2、WTe2、PtTe2And TaTe2One of；It is described ferromagnetic
Material layer is selected from one of CoFeB alloy, Co-Ni multilayer film, Co-Tb alloy and Co-Gd alloy, and the barrier layer is selected from
One of MgO, Al-O.
In a preferred embodiment, your outer semimetal layer of the two dimension is MoTe2、WTe2Or PtTe2In one
Kind.
In a preferred embodiment, the ferromagnetic material layers are CoFeB alloy or Co-Ni multilayer film.
In a preferred embodiment, the barrier layer is MgO.
In a preferred embodiment, your outer semimetal layer of the described two dimension with a thickness of 1~60nm, the iron
Flux material layer with a thickness of 0.8~10nm, the barrier layer with a thickness of 1~3nm.
In a preferred embodiment, your outer semimetal layer of the described two dimension with a thickness of 1~6nm, the iron
Flux material layer with a thickness of 1.2~6nm, the barrier layer with a thickness of 2.5~3nm.
In a preferred embodiment, LED of the LED component layer choosing from GaAs quantum well constitution.
In a preferred embodiment, the LED of the GaAs quantum well constitution is in p-type GaAs substrate surface under
Supreme has been stacked: the buffer area p-type GaAs, GaAs layers of p-type, GaAs layers of I type, I type InGaAs quantum well layer, I type GaAs
Layer and GaAs layers of N-type.
In a preferred embodiment, the p-type GaAs substrate, GaAs layers of p-type, GaAs layers of I type, I type GaAs
Layer and GaAs layers of N-type of thickness are respectively 30-100nm；The buffer area the p-type GaAs with a thickness of 300~800nm, the I type
InGaAs quantum well layer with a thickness of 3~15nm.
In a preferred embodiment, the matrix is selected from GaAs piece, Si piece, SiO2/ Si piece, mica sheet, stone
One of English piece, sapphire.
Second aspect of the present invention provides the preparation method of above-mentioned spin electric device, to obtain using the outer that semimetal of two dimension
Spin electric device with ferromagnetic material layers as spin injection end.
In order to achieve this, the present invention provides the preparation method of above-mentioned spin electric device in the embodiment on basis,
Include the following steps:
LED component layer is successively grown on matrix by molecular beam epitaxy；
Barrier layer is grown on the LED component layer by magnetron sputtering embrane method or molecular beam epitaxy；
Ferromagnetic material layers are grown on the barrier layer by magnetron sputtering embrane method；And
The outer that semimetal layer of two dimension is grown on the ferromagnetic material layers, the method that the growth uses is selected from outside molecular beam
Prolong method, magnetron sputtering embrane method and chemical vapour deposition technique.
Another aspect of the present invention provides the regulation method of above-mentioned spin electric device, comprising: using electric current outside two dimension
It is flowed through on the surface of your semimetal layer, the electronics under rotation direction, in the spin downward electronics and ferromagnetic material layers
Vertical magnetic moment is had an effect, and the magnetic moment of the ferromagnetic material layers is flipped, and realizes the conversion of electric current-spin current.
Through the above technical solutions, the present invention utilizes spin(-)orbit torque (Spin Orbit Torque, SOT) effect
Electric current driving spin injection end, using above-mentioned two-dimentional outer that semimetal and ferromagnetic material layers as spin injection end, by outside
Semimetallic spin(-)orbit torque (SOT) effect of that, may be implemented the conversion of electric current-spin current, based on spin under zero magnetic field
Track torque (SOT) effect, your outer non-equilibrium spin current of semimetal charge-Spin transition mechanism accumulation of two dimension and generate spin
Transfer torque is had an effect with the vertical magnetic moment in ferromagnetic material layers, and the magnetic moment of the ferromagnetic material layers is flipped.Quilt in this way
Polarized electronics, with hole-recombination, issues corresponding polarization state according to quantum leap selection rule after spreading in LED component layer
Polarised light.The present invention can achieve no external magnetic field to regulate and control the effect of injection electronics, and can be effectively carried out spin injection,
Preparation method technique does not need externally-applied magnetic field than before, more simplified.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of spin electric device of the embodiment of the present invention；
Fig. 2-3 is the magneto-optical kerr test characterization schematic diagram of spin electric device of the embodiment of the present invention.
Description of symbols
The outer that semimetal layer of 1- two dimension, 2- ferromagnetic material layers, 3- barrier layer, 4-LED components layer, GaAs layers of 4.1-N type,
GaAs layers of 4.2-I type, 4.3-I type InGaAs quantum well layer, GaAs layers of 4.4-I type, GaAs layers of 4.5-P type, 4.6-P type GaAs is slow
Rush area, 5-P type GaAs substrate (matrix).
Specific embodiment
In order to better understand the above technical scheme, being done below by specific embodiment to technical scheme detailed
Explanation, it should be understood that the specific features in the embodiment of the present application and embodiment be to technical scheme specifically
It is bright, rather than the restriction to technical scheme, in the absence of conflict, the skill in the embodiment of the present application and embodiment
Art feature can be combined with each other.It should be understood that term "and/or" used herein above includes listed by one of them or more
Any and all combinations of associated item out.
The endpoint of disclosed range and any value are not limited to the accurate range or value herein, these ranges or
Value should be understood as comprising the value close to these ranges or value.For numberical range, between the endpoint value of each range, respectively
It can be combined with each other between the endpoint value of a range and individual point value, and individually between point value and obtain one or more
New numberical range, these numberical ranges should be considered as specific open herein.
TMDs (two-dimentional transient metal sulfide) have atomic-level thickness, direct band gap, very strong Quantum geometrical phase and
Extensive characteristic electron.Current regulation electron spin can be injected and two-dimensional material TMDs (two-dimentional transient metal sulfide)
Possessed thin, light transmission has very strong Quantum geometrical phase to combine to be applied on Spin-LED, become present invention
Design.
The embodiment of the invention provides a kind of spin electric devices, including matrix, and in matrix surface layer from the bottom to top
Folded setting:
LED component layer；
Barrier layer；
Ferromagnetic material layers, and
Two-dimentional outer that semimetal layer；
Wherein, your outer semimetal layer of the two dimension is selected from MoTe2、WTe2、PtTe2Middle TaTe2One of；It is described ferromagnetic
Material layer is selected from one of CoFeB alloy, Co-Ni multilayer film, Co-Tb alloy and Co-Gd alloy, and the barrier layer is selected from
One of MgO, Al-O.
Your outer semimetal layer of above-mentioned two dimension selects the two-dimentional material with stronger Quantum geometrical phase or with topological structure
Outer this metal of that MoTe of material, mainly two dimension2、WTe2、PtTe2Or TaTe2, they have topological state electronic structure；And thin,
Light transmission has very strong Quantum geometrical phase (SOC)；In addition, the magnetic that your outer semimetal layer of above-mentioned two dimension is driven based on the electric current of SOT
Current density (meaning power consumption) needed for changing overturning may be than the more low advantage in topological insulator/ferrimagnet, can
Regulate and control injection electronics to achieve the effect that no external magnetic field, and can be effectively carried out spin injection.
Above-mentioned ferromagnetic material layers are chosen for CoFeB alloy, Co-Ni multilayer film, Co-Tb alloy or Co-Gd alloy, they are
Magnetic material with perpendicular magnetic anisotropy has the magnetic moment in vertical direction, and spin polarizability without externally-applied magnetic field
Greatly, circularly polarized light polarizability is high.
Your the outer thickness of semimetal layer of above-mentioned two dimension is preferably 1~60nm, and the thickness of the ferromagnetic material layers is preferred
For 0.8~10nm, the thickness of the barrier layer is preferably 1~3nm.
The LED of GaAs quantum well constitution may be selected in above-mentioned LED component layer, in a preferred embodiment, above-mentioned
The LED of GaAs quantum well constitution being stacked from the bottom to top in p-type GaAs substrate surface (matrix): the buffer area p-type GaAs,
GaAs layers of p-type, GaAs layers of I type, I type InGaAs quantum well layer, GaAs layers of I type and GaAs layers of N-type.Above-mentioned LED structure is
InGaAs Quantum Well (QW) is the structure of luminous zone, can observe higher electroluminescent polarizability at room temperature.
Conventional material can be selected in above-mentioned basis material, such as: it is selected from GaAs piece, Si piece, SiO2/ Si piece, mica sheet, quartz
One of piece, sapphire.
The embodiment of the invention also provides the preparation methods of above-mentioned spin electric device, include the following steps:
LED component layer is successively grown on matrix by molecular beam epitaxy；
Barrier layer is grown on the LED component layer by magnetron sputtering embrane method or molecular beam epitaxy；
Ferromagnetic material layers are grown on the barrier layer by magnetron sputtering embrane method；And
The outer that semimetal layer of two dimension is grown on the ferromagnetic material layers, the method that the growth uses is selected from outside molecular beam
Prolong method, magnetron sputtering embrane method and chemical vapour deposition technique.
The embodiment of the present invention is flowed through on your semimetal layer outside two dimension using electric current, since your semimetal layer has outside two dimension
Stronger Quantum geometrical phase and higher charge-Spin transition efficiency, charge-Spin transition mechanism accumulation are non-equilibrium
Spin current and generate spin transfer torque and have an effect with the vertical magnetic moment in ferromagnetic material layers, the magnetic moment of the ferromagnetic material layers
It is flipped.So that the Magnetic moment reversal of the spin injection end of electric current driving can be realized, reaches without external magnetic field and regulate and control injection electricity
Son spin state come realize regulation spinning LED luminous polarized state.
Below with reference to the drawings and specific embodiments, the present invention will be described in detail.Material used in embodiment can lead to
Commercially available channel is crossed to obtain.
Embodiment 1
As shown in Figure 1, the embodiment of the present invention 1 provides a kind of spin electric device, including matrix 5, and in matrix table
Face being stacked from the bottom to top: LED component layer 4, barrier layer 3, ferromagnetic material layers 2 and your outer semimetal layer 1 of two dimension；
Wherein, your outer semimetal layer 1 of above-mentioned two dimension is MoTe2；Above-mentioned ferromagnetic material layers 2 are CoFeB alloy, above-mentioned potential barrier
Layer 3 is MgO.
Your outer semimetal layer 1 of above-mentioned two dimension with a thickness of 3nm, above-mentioned ferromagnetic material layers 2 with a thickness of 1.2nm, on
The barrier layer 3 stated with a thickness of 2.5nm.
Above-mentioned LED component layer 4 being stacked from the bottom to top on 5 surface of matrix: the buffer area p-type GaAs 4.6, p-type
GaAs layer 4.5, I type GaAs layer 4.4, I type InGaAs quantum well layer 4.3, I type GaAs layer 4.2 and N-type GaAs layer 4.1.
Above-mentioned matrix 5 is p-type GaAs substrate.
The preparation method of above-mentioned spin electric device, includes the following steps:
(1) use molecular beam epitaxy method, under conditions of ultrahigh vacuum, with filled it is various needed for components stove,
Heating generates steam, after small holes collimate, forms molecular beam or atomic beam, is then directly injected to the lower monocrystalline base of temperature
On piece.Molecule or atom can be made to be grown in base by the lattice arrangement of substrate to serving as a contrast into being scanned by the direction of molecular beam
On piece forms film, successively successively grows each layer in the LED components layers 4 such as GaAs base, InAs base.
(2) magnetic metal CoFeB alloy (ferromagnetic material is grown on above-mentioned LED component layer 4 by magnetron sputtering coater
2) and barrier layer 3 (MgO) layer；Specifically: it is first vacuumized using superhigh vacuum magnetron sputtering equipment, is 5 × 10 to vacuum degree-7Pa
Afterwards, it is being sputtered.High purity argon air pressure is 0.07 pa when sputtering；Sputtering power is 120 watts；The specimen holder speed of rotation:
20rmp；Growth temperature: room temperature；Growth time: film thickness/growth rate；
(3) pass through chemical vapour deposition technique (CVD) in ultravacuum room for New Two Dimensional material (TMDs two dimension transition metal
Sulfide and the outer that semimetal MoTe of two dimension2) be grown on ferromagnetic material layers 2.
The present embodiment spin electric device is to utilize it based on the two-dimensional material with stronger Quantum geometrical phase (SOC)
The spinning LED of the electric current driving spin injection end of spin(-)orbit torque (Spin Orbit Torque, SOT) effect
(Spin-LED).Its specific regulation luminescent method, comprising: with New Two Dimensional material (the outer that semimetal MoTe of two dimension2) and it is ferromagnetic
Property material (CoFeB) as spin injection end, the electric current of forward direction (or reversed) is given in two-dimensional material, since electronics exists
Quantum geometrical phase in two-dimensional material cleaves, and a part of electron spin is downward upwards for a part of electron spin, from rotation direction
Under electronics have an effect with the vertical magnetic moment in lower layer's ferromagnetic layer, that is, utilize New Two Dimensional material spin(-)orbit torque
(SOT) it is flipped the magnetic moment of lower layer's ferromagnetic layer, it can to realize the conversion of electric current-spin current, then the base under zero magnetic field
In the Magnetic moment reversal that the electric current of spin(-)orbit torque (SOT) effect drives.So that injected electrons is polarized, possesses vertically upward
Or downward polarization direction.The electronics being polarized in this way is diffused into I type In by N-type GaAs layers0.1Ga0.9As Quantum Well and come
From GaAs layers of hole-recombination of p-type, the polarised light of certain degree of polarization is issued according to quantum leap selection rule.
Embodiment 2
Similar with embodiment, the embodiment of the present invention 2 provides a kind of spin electric device, including matrix 5, and in matrix
5 surfaces being stacked from the bottom to top: LED component layer 4, barrier layer 3, ferromagnetic material layers 2 and your outer semimetal layer of two dimension
1；
Wherein, your outer semimetal layer 1 of above-mentioned two dimension is WTe2；Above-mentioned ferromagnetic material layers 2 are Co-Ni multilayer film, above-mentioned gesture
Barrier layer 3 is Al-O.
Your outer semimetal layer 1 of above-mentioned two dimension with a thickness of 3nm, above-mentioned ferromagnetic material layers 2 with a thickness of 6nm, it is above-mentioned
Barrier layer 3 with a thickness of 2.5nm.Each layer height not representative thickness trend in Fig. 1.
The preparation method of above-mentioned spin electric device, includes the following steps:
(1) each floor in above-mentioned LED component floor 4 is grown by the stacking of MBE (molecular beam epitaxy) method in ultravacuum room；
(2) magnetic metal Co-Ni (ferromagnetic material layers 2) is grown on above-mentioned LED component layer 4 by molecular beam epitaxial method
With barrier layer (Al-O).
(3) by magnetron sputtering embrane method, by New Two Dimensional material, (TMDs two dimension transition metal vulcanizes in ultravacuum room
Object and the outer that semimetal WTe of two dimension2) be grown on ferromagnetic material layers 2.
Embodiment 3
Similar to Example 1, the embodiment of the present invention 3 provides a kind of spin electric device, including matrix 5, and in base
5 surface of body being stacked from the bottom to top: LED component layer 4, barrier layer 3, ferromagnetic material layers 2 and your outer semimetal of two dimension
Layer 1；
Wherein, your outer semimetal layer 1 of above-mentioned two dimension is PtTe2；Above-mentioned ferromagnetic material layers 2 are Co-Gd alloy, above-mentioned potential barrier
Layer 3 is Al-O.
Your outer semimetal layer 1 of above-mentioned two dimension with a thickness of 6nm, above-mentioned ferromagnetic material layers 2 with a thickness of 6nm, it is above-mentioned
Barrier layer 3 with a thickness of 1nm.
The preparation method of above-mentioned spin electric device, includes the following steps:
(1) each floor in above-mentioned LED component floor 4 is grown by the stacking of MBE (molecular beam epitaxy) method in ultravacuum room；
(2) magnetic metal Co-Gd alloy (iron is grown on above-mentioned LED component layer 4 by Magnetron Sputtering Thin Film growing method
Flux material layer 2) and barrier layer (Al-O).
(3) by molecular beam epitaxial method, by New Two Dimensional material, (TMDs two dimension transition metal vulcanizes in ultravacuum room
Object and the outer that semimetal PtTe of two dimension2) be grown on ferromagnetic material layers 2.
Embodiment 4
It is similar to Example 3, the spin electric device of the present embodiment the difference is that:
Wherein, your outer semimetal layer 1 of above-mentioned two dimension is TaTe2；Above-mentioned ferromagnetic material layers 2 are Co-Tb alloy, above-mentioned potential barrier
Layer 3 is Al-O.
Your outer semimetal layer 1 of above-mentioned two dimension with a thickness of 20nm, above-mentioned ferromagnetic material layers 2 with a thickness of 10nm, on
The barrier layer 3 stated with a thickness of 3nm.
Embodiment 5
It is similar to Example 1, the spin electric device of the present embodiment the difference is that:
Wherein, your outer semimetal layer 1 of above-mentioned two dimension with a thickness of 40nm, above-mentioned ferromagnetic material layers 2 with a thickness of
10nm, above-mentioned barrier layer 3 with a thickness of 3nm.
Embodiment 6
It is similar to Example 2, the spin electric device of the present embodiment the difference is that:
Wherein, your outer semimetal layer 1 of above-mentioned two dimension with a thickness of 60nm, above-mentioned ferromagnetic material layers 2 with a thickness of
6nm, above-mentioned barrier layer 3 with a thickness of 3nm.
Test case
Under zero magnetic field, the Magnetic moment reversal of the electric current driving in the injection end that spins based on spin(-)orbit torque effect.It will be above-mentioned
The spin electric device of embodiment 1-6 preparation is tired through your outer semimetal charge-Spin transition mechanism of two dimension in overspin injection end
Long-pending non-equilibrium spin current and generate spin transfer torque and have an effect with the vertical magnetic moment in ferromagnetic material layers, the ferromagnetic material
The magnetic moment of the bed of material is flipped test.
Specific testing procedure is as follows:
As shown in Figure 1, applying current density size to the right along the direction of the arrow is 9*10 in first layer6A/cm2, pulse is wide
Degree be 30 μ s pulse currents, realize ferromagnetic layer magnetic moment direction be flipped up (magneto-optical kerr test characterization, black be magnetic moment court
On, as shown in Figure 2)；As shown in Figure 1, applying current density size to the left along the direction of the arrow is 9.5*10 in first layer6A/
cm2, pulse width is 30 μ s pulse currents, realizes ferromagnetic layer magnetic moment magnetic moment direction and downwardly turns over (magneto-optical kerr test table
Sign, white be magnetic moment downward, as shown in Figure 3).Spin injection end data is obtained, therefrom it can be concluded that again without utilizing under magnetic field
The non-equilibrium spin current of charge-Spin transition mechanism accumulation and generate the vertical magnetic moment in spin transfer torque and ferromagnetic material layers
It has an effect, the magnetic moment of the ferromagnetic material layers is flipped, and reset current density is 9.5*106A/cm2.The present embodiment is certainly
Revolve electronic device have electric current driving spin injection end Magnetic moment reversal, reach without external magnetic field come regulate and control injection electronics from
State is revolved to realize the luminous polarized state effect of regulation spinning LED.
The spin state of corresponding injection electronics, utilization are electroluminescent under the magnetic moment of two kinds of spin injection ends of above-mentioned steps regulation
Shine measurement (EL) system, based on photon is generated during Carrier recombination, leads to focussed collimated for the spin polarization light of generation
By a quarter slide, monochromator is then entered after linear polarizer, is imaged on CCD, is adjusted without external magnetic field
Control injects the spin state of electronics to realize the luminous polarized state effect of regulation spinning LED, realizes luminous two kinds
Circular polarization state.
The preferred embodiment of the present invention has been described above in detail, and still, the present invention is not limited thereto.In skill of the invention
In art conception range, can with various simple variants of the technical solution of the present invention are made, including each technical characteristic with it is any its
Its suitable method is combined, and it should also be regarded as the disclosure of the present invention for these simple variants and combination, is belonged to
Protection scope of the present invention.
Claims (10)
1. a kind of spin electric device, it is characterised in that: including matrix, and be stacked from the bottom to top in matrix surface:
LED component layer；
Barrier layer；
Ferromagnetic material layers, and
Two-dimentional outer that semimetal layer；
Wherein, your outer semimetal layer of the two dimension is selected from MoTe2、WTe2、PtTe2And TaTe2One of；The ferromagnetic material layers
Selected from one of CoFeB alloy, Co-Ni multilayer film, Co-Tb alloy and Co-Gd alloy, the barrier layer is selected from MgO, Al-O
One of.
2. spin electric device according to claim 1, it is characterised in that: your semimetal layer is outside the two dimension
MoTe2、WTe2And PtTe2One of；The ferromagnetic material layers are CoFeB alloy or Co-Ni multilayer film；The potential barrier
Layer is MgO.
3. spin electric device according to claim 1 or 2, it is characterised in that: the outer that semimetal layer of the two dimension
With a thickness of 1~60nm, the ferromagnetic material layers with a thickness of 0.8~10nm, the barrier layer with a thickness of 1~3nm.
4. spin electric device according to claim 3, it is characterised in that: the thickness of your outer semimetal layer of the two dimension
For 1~6nm, the ferromagnetic material layers with a thickness of 1.2~6nm, the barrier layer with a thickness of 2.5~3nm.
5. spin electric device according to claim 1, it is characterised in that: the LED component layer is GaAs Quantum Well
The LED of composition.
6. spin electric device according to claim 5, it is characterised in that: the LED of the GaAs quantum well constitution is in P
Type GaAs substrate surface being stacked from the bottom to top: the buffer area p-type GaAs, GaAs layers of p-type, GaAs layers of I type, I type
InGaAs quantum well layer, GaAs layers of I type and GaAs layers of N-type.
7. spin electric device according to claim 6, it is characterised in that: the p-type GaAs substrate, GaAs layers of p-type,
GaAs layers of I type, GaAs layers of I type and GaAs layers of N-type of thickness are respectively 30-100nm；The buffer area the p-type GaAs with a thickness of
300~800nm, the I type InGaAs quantum well layer with a thickness of 3~15nm.
8. spin electric device according to claim 1, it is characterised in that: the matrix be selected from GaAs piece, Si piece,
SiO2One of/Si piece, mica sheet, quartz plate, sapphire.
9. the preparation method of spin electric device as described in claim any one of 1-8, characterized by the following steps:
LED component layer is successively grown on matrix by molecular beam epitaxy；
Barrier layer is grown on the LED component layer by magnetron sputtering embrane method or molecular beam epitaxy；
Ferromagnetic material layers are grown on the barrier layer by magnetron sputtering embrane method；And
The outer that semimetal layer of two dimension is grown on the ferromagnetic material layers, the method that the growth uses is selected from molecular beam epitaxy
Method, magnetron sputtering embrane method and chemical vapour deposition technique.
10. the regulation method of spin electric device as described in claim any one of 1-8, it is characterised in that: include: to utilize electric current
It is flowed through on the surface of your semimetal layer outside two dimension, the electronics under rotation direction, the spin downward electronics and ferromagnetic material
Vertical magnetic moment in the bed of material is had an effect, and the magnetic moment of the ferromagnetic material layers is flipped, and realizes the conversion of electric current-spin current.
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| CN113161478A (en) * | 2021-03-08 | 2021-07-23 | 湖北大学 | Artificial intelligence-based spin electronic sound recognition device and preparation method and application thereof |
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