CN102082018A - Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof - Google Patents
Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof Download PDFInfo
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- CN102082018A CN102082018A CN2009102415874A CN200910241587A CN102082018A CN 102082018 A CN102082018 A CN 102082018A CN 2009102415874 A CN2009102415874 A CN 2009102415874A CN 200910241587 A CN200910241587 A CN 200910241587A CN 102082018 A CN102082018 A CN 102082018A
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Abstract
The invention provides a magnetic multilayer film unit, comprising a magnetic multilayer film core unit and a magnetic moment control unit, wherein the magnetic multilayer film core unit comprises a free layer; the magnetic moment control unit comprises two conducting layers; and the free layer of the magnetic multilayer film core unit is positioned in an electric field formed by the two conducting layers. In addition, the invention also provides a corresponding preparation method and a magnetic moment overturning control method of the magnetic multilayer film unit. In the invention, the power consumption of the devices is greatly reduced, and the integration level of the devices can be improved; a preparation process and a semiconductor process are compatible so as to be beneficial to large-scale industrial production; and the magnetic multilayer film unit is beneficial to miniaturization of spintronic devices and has the advantage of radiation resistance. The magnetic multilayer film unit can be widely applied in the spintronic devices such as logic devices, nonvolatile storages, spinning transistors and various sensors and the like in the field of the future computer information communication industry. The invention is beneficial to widening of the application range of the spintronic devices.
Description
Technical field
The present invention relates to the spintronics technical field, specifically, the present invention relates to a kind of magnetoresistance effect unit and preparation thereof and magnetic moment method for turning.
Background technology
With magnetic random memory (MRAM) be that the spintronics device of representative has that data are non-volatile, radiation resistance, at a high speed, characteristics such as high density, low-power consumption, long-life, being the core devices in following next generation computer, the information and communication technology (ICT), is one of important industry technology that promotes high-tech industry and World Economics sustainable development.
The core of spintronics device is controlling spin.And the macro manifestations that spins in magnetic material is exactly a magnetic moment, and therefore in the spintronics device based on magnetic material, its core is controlling magnetic moment.The method of traditional control magnetic moment upset is to utilize magnetic field, by the magnetic field that electric current in the hardware cloth produces, makes the magnetic moment upset, changes the sense of current, and magnetic direction changes thereupon.But this control method based on magnetic field exists in the bigger problem of power consumption, particularly array device, because the scope that allows electric current to change is very limited, the realization difficulty of this method is very big, is unfavorable for the raising of device integrated level.On the other hand, since spin transfer torque effect that electric current in 1996 produces was found, the spintronics device of handling the magnetic moment upset based on the spin transfer square effect of electric current had become the focus of current research.Handle magnetic moment by spin transfer square effect and can reduce the required electric current of upset magnetic moment, thereby reach the effect that reduces power consumption.Yet this scheme still has very important difficult point, and for example, its critical reset current density can not reduce, and becomes the bottleneck that the device integrated level improves and device miniaturization develops.And the device preparation technology of this scheme and semiconductor CMOS circuit do not match, and are difficult to carry out large-scale production with identical technological level standard; The uniformity and the rate of finished products of its explained hereafter also face very big difficulty simultaneously.
Summary of the invention
One of purpose of the present invention provides the magnetoresistance effect unit of a kind of low-power consumption, high density, high integration and miniaturization.
Two of purpose of the present invention provides the preparation method of above-mentioned magnetoresistance effect unit.
Three of purpose of the present invention provides the magnetic moment upset control method of a kind of above-mentioned magnetoresistance effect unit.
For realizing above-mentioned first goal of the invention, the invention provides a kind of magnetoresistance effect unit, comprise magnetoresistance effect core cell and magnetic moment control unit, described multilayer film core cell comprises free layer, described magnetic moment control unit comprises two conductive layers, and the free layer of described multilayer film core cell is arranged in described two formed electric fields of conductive layer.
Wherein, described two conductive layers all are parallel to the face of described magnetoresistance effect core cell.
Wherein, described two conductive layers are all perpendicular to the face of described magnetoresistance effect core cell.
When described two conductive layers during all perpendicular to the face of described magnetoresistance effect core cell, in certain embodiments, the height of described conductive layer (referring to perpendicular to the size on the described face direction) is 1～1.5 with the ratio of described free layer thickness.Further, described magnetic moment control unit can also comprise two second conductive layers, and described nailed layer is arranged in described two the second formed electric fields of conductive layer, and the ratio of the height of described nailed layer and described nailed layer thickness is 1～1.5.
Wherein, described magnetoresistance effect core cell adopts unipotential base type structure; The magnetoresistance effect core cell of unipotential base type structure also comprises resilient coating, pinning layer, nailed layer and the barrier layer that is positioned at described free layer downside, and the cover layer that is positioned at described free layer upside.
Wherein, described multilayer film core cell adopts double potential barrier type structure; The magnetoresistance effect core cell of double potential barrier type also comprises the resilient coating that is positioned at described free layer downside, pinning layer, nailed layer and lower barrierlayer down down, and be positioned at described free layer upside last barrier layer, go up nailed layer, go up pinning layer and cover layer.
Wherein, described buffer layer thickness is 2～200nm, and its manufacturing materials can be from Ta, Ru, Cr, Au, Ag, Pt, W, Ti, Cu, Al, SrTiO
3, LaAlO
3, CeO
2The middle selection;
Described pinning layer is made by having anti-ferromagnetic alloy, as IrMn, and FeMn, PtMn, CrMn or Pt (Cr, Mn) alloy, thickness are 3～30nm;
Described nailed layer and free layer are made by magnetic material; The material of nailed layer and free layer can be identical with thickness, also can be inequality;
The thickness of described nailed layer is 0.3～50nm, and the thickness of described free layer is 0.3～50nm; The available magnetic material of described nailed layer and free layer comprises: Co, Fe, Ni or their metal alloy Ni
xFe
100-x, Co
xFe
100-x, NiFeCo, CoFeSiB, NiFeSiB, or amorphous Co
100-x-yFe
xB
y(0＜x＜100,0＜y≤20), or Heusler alloy are as Co
2MnSi, Co
2Cr
0.6Fe
0.4Al; Or have the periodicity multilayer film of perpendicular magnetic anisotropic, as Co/Pt multilayer film, CoFe/Pt multilayer film, Co/Pd multilayer film, Co/Ni multilayer film, Co/Au multilayer film or CoCr/Pt multilayer film; Or have a single layer alloy film of perpendicular magnetic anisotropic, be alloy (as described in Co-Cr be that alloy comprises Co-Cr, Co-Cr-Nb, Co-Cr-Ta or Co-Cr-Pt alloy), TbFeCo alloy, GdFeCo alloy, Gd-Co alloy, GdFe alloy, TbFe alloy, TbCo/Cr alloy, CoGdZr alloy, CoGdSm alloy, GdTbFeCo alloy or GdTbFe alloy firm as FePt alloy, PtCoNi alloy, the Co-Cr of CoPt alloy, L10 phase; Or magnetic semiconductor GaMnAs, GaMnN, and ZnO mixes Co etc., or the magnetic material of perovskite structure, as LaSrMnO, LaCaMnO etc.;
Described barrier layer thickness is 0.5～100nm, makes with insulating material, the preferred Al of described insulating material
2O
3, ZnO, TiO, SnO, MgO, TaO, AlN, SiO
2, or organic molecule material (as polyvinylchloride, polythene PE, polypropylene PP, polytetrafluoroethylene, organo-metallic compound Alq3 etc.), or the perovskite oxide of composition modulation etc.
Described overburden cover is 5～1000nm, and manufacturing materials is the less normal metal of resistivity, as Ru, Pt, Ag, Au, Cr, Cu, Al, AlSi with and alloy; Or be superconductor, as Nb, Sn, Pb, In, Ta, Nb-Ti and YBa2Cu3O7 etc.
The plane geometric shape of described preparation magnetoresistance effect core cell is ellipse, rectangle, circle, square, polygon, annular, oval ring or polygon annular.
Described conductive layer thickness is 2～200nm, and manufacturing materials is Ta, Ru, Cr, Au, Ag, Pt, W, Ti, Cu, Al, SrTiO
3, LaAlO
3Or CeO
2
For realizing above-mentioned second goal of the invention, the present invention also provides the preparation method of a kind of magnetoresistance effect unit, and this method comprises the following steps:
1) on substrate, prepares lower conductiving layer;
2) preparation magnetoresistance effect core cell on described lower conductiving layer, the face of described magnetoresistance effect core cell is parallel with described lower conductiving layer;
3) insulating barrier in the preparation of the top of described magnetoresistance effect core cell prepares conductive layer on the insulating barrier on described then.
Wherein, described step 2) in, also be included in preparation magnetoresistance effect core cell before, preparation earlier is insulating barrier down, then the described magnetoresistance effect core cell of preparation on described insulating barrier down.
For realizing above-mentioned second goal of the invention, the present invention also provides the preparation method of another kind of magnetoresistance effect unit, and this method comprises the following steps:
1) preparation magnetoresistance effect core cell on substrate;
2) prepare insulating barrier in the both sides of described preparation magnetoresistance effect core cell,, the free layer of described magnetoresistance effect core cell is between described two vertical conductive layers at two vertical conductive layers of described insulating barrier outside preparation.
For realizing above-mentioned the 3rd goal of the invention, the present invention also provides the magnetic moment upset control method of a kind of above-mentioned magnetoresistance effect unit, and this method comprises the following steps:
1) obtains the upset critical voltage of described magnetoresistance effect unit;
2) between described two conductive layers, apply the voltage that is not less than described upset critical voltage, realize the magnetic moment upset, promptly write operation is carried out in described magnetoresistance effect unit.
Compared with prior art, the present invention has following technique effect:
The present invention greatly reduces the power consumption of device.
The present invention can improve the integrated level of device.
Magnetic moment control unit of the present invention is compatible mutually with semiconductor technology, helps developing large-scale industrial production.
The present invention helps the spintronics miniaturization of devices.
Magnetoresistance effect of the present invention has radiation-resistant advantage.
Magnetoresistance effect of the present invention can be widely used in logical device, nonvolatile memory, spin transistor and the various transducer isospin electronics device in the following computerized information communication industry field.The present invention helps widening the range of application of spintronics device.
Description of drawings
Below, describe embodiments of the invention in conjunction with the accompanying drawings in detail, wherein:
Fig. 1 is the longitudinal section schematic diagram of a kind of magnetoresistance effect unit based on vertical face electric field of the present invention;
Fig. 2 is the schematic diagram of a kind of magnetoresistance effect unit based on parallel face electric field of the present invention; Wherein a partly is the longitudinal section schematic diagram, and b partly is a vertical view;
Fig. 3 is the schematic diagram of a kind of magnetoresistance effect unit based on the parallel face electric field of local of the present invention; Wherein a partly is the longitudinal section schematic diagram, and b partly is a schematic top plan view;
Fig. 4 is the schematic diagram of a kind of magnetoresistance effect unit based on the parallel face electric field of two locals of the present invention; Wherein a partly is the longitudinal section schematic diagram, and b partly is a schematic top plan view;
Fig. 5 is the longitudinal section schematic diagram of a kind of dual-potential magnetic multilayer film unit based on vertical face electric field of the present invention;
Fig. 6 is the longitudinal section schematic diagram of a kind of dual-potential magnetic multilayer film unit based on parallel face electric field of the present invention;
Fig. 7 is the longitudinal section schematic diagram of a kind of dual-potential magnetic multilayer film unit based on the parallel face electric field of local of the present invention.
Embodiment
At first, briefly introduce the principle of institute of the present invention foundation.This case inventor has creatively proposed a kind ofly to produce the spin transfer torque effect or the local 3d of magnetic material or the configuration of 4f electronics are changed in magnetoresistance effect by voltage, and and then realizes the method for magnetic moment upset.Its principle is as follows:
Magnetoresistance effect is placed electric field and increases electric field strength, will form the effect of Equivalent Magnetic Field to the magnetic material magnetic moment that be similar to the free layer (magnetosphere) of magnetoresistance effect, its magnetic torque changes
(can reference: D.C.Ralph et al, JMMM, 320 (2008) 1190), wherein
Expression applies torque behind the voltage,
Expression applies the torque before the voltage, and A is the balance dimensional constant, and e is the elementary charge constant, and V is by being applied voltage, and the voltage here all is meant the applied voltage that forms electric field.From above-mentioned formula as can be seen, magnetic moment change approximate be proportional to the applied voltage that forms electric field square.And on the other hand, because the conductivity of free layer is much larger than barrier layer, when therefore magnetoresistance effect being placed electric field, can produce huge electric-force gradient at the interface at free layer and barrier layer, thereby the local 3d of at the interface magnetic material or the configuration of 4f electronics are changed, thereby form the moment that the direction that makes magnetic moment is rotated.Describe for convenient, be referred to as field effect hereinafter.Under the comprehensive function of above two kinds of mechanism, only need two conductive layers to be set, between two conductive layers, apply voltage then, can form the moment of the direction rotation that impels magnetic moment in the periphery of magnetoresistance effect, in the time of only need making this voltage greater than a critical value, the free layer magnetic moment just can overturn.Because this magnetic moment method for turning does not almost have electric current to pass through the magnetoresistance effect unit, therefore greatly reduce the power consumption of device.
Below, in order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, to magnetoresistance effect of the present invention unit and preparation method thereof, and the magnetic moment control method is elaborated.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Present embodiment provides a kind of magnetoresistance effect unit based on vertical face electric field.As shown in Figure 1, the magnetoresistance effect unit of present embodiment comprises magnetoresistance effect core cell and magnetic moment control unit.
Wherein, the multilayer film core cell adopts unipotential base type structure, comprises resilient coating 1, pinning layer 2, nailed layer 3, barrier layer 4, free layer 5 and cover layer 6 from the bottom to top successively.The magnetic moment control unit comprises two conductive layers 7,8, two conductive layers 7,8 all are parallel to the face of magnetoresistance effect core cell, and the multilayer film core cell is between two conductive layers 7,8, and promptly the multilayer film core cell is arranged in two conductive layers, 7,8 formed electric fields.Have insulating barrier between the conductive layer of multilayer film core cell and the multilayer film core cell in the present embodiment, be used for conductive layer and multilayer film core cell are separated.
Wherein, described buffer layer thickness is 2～200nm, and its manufacturing materials can be selected from Ta, Ru, Cr, Au, Ag, Pt, W, Ti, Cu, Al, SrTiO3, LaAlO3, CeO2;
Described pinning layer is made by having anti-ferromagnetic alloy, as IrMn, and FeMn, PtMn, CrMn or Pt (Cr, Mn) alloy, thickness are 3～30nm;
Described nailed layer and free layer are made by magnetic material; The material of nailed layer and free layer can be identical with thickness, also can be inequality;
The thickness of described nailed layer is 0.3～50nm, and the thickness of described free layer is 0.3～50nm; The available magnetic material of described nailed layer and free layer comprises: Co, Fe, Ni or their metal alloy NixFe100-x, CoxFe100-x, NiFeCo, CoFeSiB, NiFeSiB, or amorphous Co100-x-yFexBy (0＜x＜100,0＜y 20), or the Heusler alloy, as Co2MnSi, Co2Cr0.6Fe0.4Al; Or have the periodicity multilayer film of perpendicular magnetic anisotropic, as Co/Pt multilayer film, CoFe/Pt multilayer film, Co/Pd multilayer film, Co/Ni multilayer film, Co/Au multilayer film or CoCr/Pt multilayer film; Or have a single layer alloy film of perpendicular magnetic anisotropic, be alloy (as described in Co-Cr be that alloy comprises Co-Cr, Co-Cr-Nb, Co-Cr-Ta or Co-Cr-Pt alloy), TbFeCo alloy, GdFeCo alloy, Gd-Co alloy, GdFe alloy, TbFe alloy, TbCo/Cr alloy, CoGdZr alloy, CoGdSm alloy, GdTbFeCo alloy or GdTbFe alloy firm as FePt alloy, PtCoNi alloy, the Co-Cr of CoPt alloy, L10 phase; Or magnetic semiconductor GaMnAs, GaMnN, and ZnO mixes Co etc., or the magnetic material of perovskite structure, as LaSrMnO, LaCaMnO etc.;
Described barrier layer thickness is 0.5～100nm, makes with insulating material, the preferred Al2O3 of described insulating material, ZnO, TiO, SnO, MgO, TaO, AlN, SiO2, or organic molecule material (as polyvinylchloride, polythene PE, polypropylene PP, polytetrafluoroethylene, organo-metallic compound Alq3 etc.), or the perovskite oxide of composition modulation etc.
Described overburden cover is 5～1000nm, and manufacturing materials is the less normal metal of resistivity, as Ru, Pt, Ag, Au, Cr, Cu, Al, AlSi with and alloy; Or be superconductor, as Nb, Sn, Pb, In, Ta, Nb-Ti and YBa2Cu3O7 etc.
The plane geometric shape of described preparation magnetoresistance effect core cell is ellipse, rectangle, circle, square, polygon, annular, oval ring or polygon annular.
Described conductive layer thickness is 2～200nm, and manufacturing materials is Ta, Ru, Cr, Au, Ag, Pt, W, Ti, Cu, Al, SrTiO3, LaAlO3 or CeO2.
For the magnetoresistance effect unit that present embodiment provides, when applying voltage on conductive layer, the free layer of magnetoresistance effect produces spin transfer torque, and barrier layer and free layer interface generation field effect.Under the comprehensive function of these two kinds of mechanism,, the voltage between two conductive layers can make the upset of free layer magnetic moment as long as reaching certain critical value.For the different magnetoresistance effects that adopt different materials, shape, size, this critical value can be different.Usually, can measure this critical value by known laboratory facilities.In the present embodiment, when upset free layer magnetic moment,, therefore greatly reduce the power consumption of device owing to almost do not have electric current to pass through the magnetoresistance effect unit.The magnetoresistance effect of present embodiment can be used as core cell be used for spinning logical device, nonvolatile memory, spin transistor and various transducer isospin electronics device.
The preparation method of present embodiment is simple, the rate of finished products height, and cost is low.
Present embodiment provides a kind of magnetoresistance effect unit based on parallel face electric field.As shown in Figure 2,
The magnetoresistance effect unit of present embodiment comprises magnetoresistance effect core cell and magnetic moment control unit,
Wherein, the multilayer film core cell adopts unipotential base type structure, comprises resilient coating 1, pinning layer 2, nailed layer 3, barrier layer 4, free layer 5 and cover layer 6 from the bottom to top successively.The magnetic moment control unit comprises two conductive layers 9,10, two conductive layers 9,10 are all perpendicular to the face of magnetoresistance effect core cell, and the multilayer film core cell is between two conductive layers 9,10, and promptly the multilayer film core cell is arranged in two conductive layers, 9,10 formed electric fields.Have insulating barrier between the conductive layer of multilayer film core cell and the multilayer film core cell in the present embodiment, be used for conductive layer and multilayer film core cell are separated.The b of Fig. 2 partly is the vertical view of the magnetoresistance effect unit of present embodiment, wherein the flat shape of multilayer film core cell is oval, two conductive layers 9,10 are produced on the both sides of this ellipse multilayer film core cell, and are filled with insulating barrier between two conductive layers 9,10 and the multilayer film core cell.
But the manufacturing materials of each layer and conductive layer and thickness reference example 1 repeat no more here in the multilayer film core cell of present embodiment.
For the magnetoresistance effect unit that present embodiment provides, when applying voltage on conductive layer, the free layer of magnetoresistance effect produces spin transfer torque, and free layer and interfacial dielectric layer generation field effect.Under the comprehensive function of these two kinds of mechanism,, the voltage between two conductive layers can make the upset of free layer magnetic moment as long as reaching certain critical value.For the different magnetoresistance effects that adopt different materials, shape, size, this critical value can be different.Usually, can measure this critical value by known laboratory facilities.In the present embodiment, when upset free layer magnetic moment,, therefore greatly reduce the power consumption of device owing to almost do not have electric current to pass through the magnetoresistance effect unit.The magnetoresistance effect of present embodiment can be used as core cell be used for spinning logical device, nonvolatile memory, spin transistor and various transducer isospin electronics device.
In the present embodiment, the electric field that conductive layer forms can directly act on described free layer, can avoid the magnetic moment switching process to be subjected to the influence of other layer of multilayer film core cell.
Present embodiment provides a kind of magnetoresistance effect unit based on the parallel face electric field of local.
According to shown in Figure 3, this magnetoresistance effect unit comprises magnetoresistance effect core cell and magnetic moment control unit.Wherein, the multilayer film core cell adopts unipotential base type structure, comprises resilient coating 1, pinning layer 2, nailed layer 3, barrier layer 4, free layer 5 and cover layer 6 from the bottom to top successively.The magnetic moment control unit comprises two conductive layers 11,12, and the free layer of multilayer film core cell is between two conductive layers 11,12, and promptly the free layer of multilayer film core cell is arranged in two conductive layers, 11,12 formed electric fields.The direction of two conductive layers 11,12 is consistent with embodiment 2, the difference of the conductive layer 11,12 of present embodiment and the conductive layer of embodiment 2 is that conductive layer only is arranged on the position corresponding to free layer, and the height of conductive layer (referring to perpendicular to the size on the described face direction) is generally 1～1.5 with the ratio of described free layer thickness.The b of Fig. 3 partly is the vertical view of the magnetoresistance effect unit of present embodiment, wherein the flat shape of multilayer film core cell is an oval ring, the flat shape of two conductive layers 11,12 is trapezoidal, they are produced on the both sides of this oval ring multilayer film core cell, and are filled with insulating barrier between the free layer of two conductive layers 11,12 and multilayer film core cell.
But the manufacturing materials of each layer and conductive layer and thickness reference example 1 repeat no more here in the multilayer film core cell of present embodiment.
In the present embodiment, when applying voltage on conductive layer, the free layer of magnetoresistance effect produces spin transfer torque, and free layer and interfacial dielectric layer generation field effect.Under the comprehensive function of these two kinds of mechanism,, the voltage between two conductive layers can make the upset of free layer magnetic moment as long as reaching certain critical value.For the different magnetoresistance effects that adopt different materials, shape, size, this critical value can be different.Usually, can measure this critical value by known laboratory facilities.In the present embodiment, when upset free layer magnetic moment,, therefore greatly reduce the power consumption of device owing to almost do not have electric current to pass through the magnetoresistance effect unit.The magnetoresistance effect of present embodiment can be used as core cell be used for spinning logical device, nonvolatile memory, spin transistor and various transducer isospin electronics device.
In the present embodiment, the electric field that conductive layer forms can directly act on described free layer, can avoid the magnetic moment switching process to be subjected to the influence of other layer of multilayer film core cell.Further, because present embodiment has adopted local electric field, this electric field only acts on free layer, and therefore, the electric field influence that present embodiment can also avoid the magnetic moment switching process to be applied arrives other layer of multilayer film core cell.In the present embodiment, in order to guarantee that free layer is applied enough electric fields, simultaneously avoid other level of this electric field and magnetoresistance effect core cell to influence each other again, the height (finger) of general conductive layer and ratio value in 1～1.5 scope of described free layer thickness perpendicular to the size on the described face direction as far as possible.
Present embodiment provides a kind of magnetoresistance effect unit based on the parallel face electric field of two locals.According to shown in Figure 4, this magnetoresistance effect unit comprises magnetoresistance effect core cell and magnetic moment control unit.Wherein, the multilayer film core cell adopts unipotential base type structure, comprises resilient coating 1, pinning layer 2, nailed layer 3, barrier layer 4, free layer 5 and cover layer 6 from the bottom to top successively.The magnetic moment control unit comprises two conductive layers 11,12, and the free layer of multilayer film core cell is between two conductive layers 11,12, and promptly the free layer of multilayer film core cell is arranged in two conductive layers, 11,12 formed electric fields.The direction of two conductive layers 11,12 is consistent with embodiment 2, the difference of the conductive layer 11,12 of present embodiment and the conductive layer of embodiment 2 is that conductive layer only is arranged on the position corresponding to free layer, and the height of conductive layer (referring to perpendicular to the size on the described face direction) is generally 1～1.5 with the ratio of described free layer thickness.The b of Fig. 4 partly is the vertical view of the magnetoresistance effect unit of present embodiment, wherein the flat shape of multilayer film core cell is an oval ring, the flat shape of two conductive layers 11,12 is trapezoidal, they are produced on the both sides of this oval ring multilayer film core cell, and are filled with insulating barrier between the free layer of two conductive layers 11,12 and multilayer film core cell.Especially, present embodiment also be provided with two second conductive layers 11 corresponding to nailed layer 3 ', 12 '.Second conductive layer 11 ', 12 ' direction consistent with the direction of conductive layer 11,12.The height of second conductive layer (referring to perpendicular to the size on the described face direction) is generally 1～1.5 with the ratio of described free layer thickness.And two second conductive layers 11 ', 12 ' and the nailed layer of multilayer film core cell between also be filled with insulating barrier.
But the manufacturing materials of each layer and conductive layer and thickness reference example 1 repeat no more here in the multilayer film core cell of present embodiment.
In the present embodiment, when applying voltage on conductive layer, the free layer of magnetoresistance effect produces spin transfer torque, and free layer and interfacial dielectric layer generation field effect.Under the comprehensive function of these two kinds of mechanism,, the voltage between two conductive layers can make the upset of free layer magnetic moment as long as reaching certain critical value.For the different magnetoresistance effects that adopt different materials, shape, size, this critical value can be different.Usually, can measure this critical value by known laboratory facilities.In the present embodiment, when upset free layer magnetic moment,, therefore greatly reduce the power consumption of device owing to almost do not have electric current to pass through the magnetoresistance effect unit.The magnetoresistance effect of present embodiment can be used as core cell be used for spinning logical device, nonvolatile memory, spin transistor and various transducer isospin electronics device.
In the present embodiment, the electric field that conductive layer forms can directly act on described free layer and nailed layer, can reduce the coupling between free layer and the nailed layer, further reduces critical turnover voltage.On the other hand, present embodiment can avoid the magnetic moment switching process to be subjected to the influence of multilayer film core cell other layer except that free layer and nailed layer.At last, present embodiment can also avoid the magnetic moment switching process to have influence on the operate as normal of multilayer film core cell other layer except that free layer and nailed layer.In the present embodiment, in order to guarantee that free layer is applied enough electric fields, simultaneously avoid other level of this electric field and magnetoresistance effect core cell to influence each other again, the height (finger) of general conductive layer 11,12 and ratio value in 1～1.5 scope of described free layer thickness perpendicular to the size on the described face direction as far as possible.Conductive layer 11 ', 12 ' height and ratio value in 1～1.5 scope of described nailed layer thickness.
Present embodiment provides a kind of dual-potential magnetic multilayer film unit based on vertical face electric field.
According to shown in Figure 5, this magnetoresistance effect unit comprises multilayer film core cell and magnetic moment control unit.
Wherein, the multilayer film core cell adopts double potential barrier type structure, comprise successively from the bottom to top resilient coating 1, down pinning layer 2, down nailed layer 3 and lower barrierlayer 4, free layer 5, go up barrier layer 4 ', go up nailed layer 3 ', go up pinning layer 2 ' and cover layer 6.The magnetic moment control unit comprises two conductive layers 7,8, two conductive layers 7,8 all are parallel to the face of magnetoresistance effect core cell, and the multilayer film core cell is between two conductive layers 7,8, and promptly the multilayer film core cell is arranged in two conductive layers, 7,8 formed electric fields.Have insulating barrier between the conductive layer of multilayer film core cell and the multilayer film core cell in the present embodiment, be used for conductive layer and multilayer film core cell are separated.
But the manufacturing materials of each layer and conductive layer and thickness reference example 1 repeat no more here in the multilayer film core cell of present embodiment.
In the present embodiment, when applying voltage on conductive layer, the free layer of magnetoresistance effect produces spin transfer torque, and barrier layer and free layer interface generation field effect.Under the comprehensive function of these two kinds of mechanism,, the voltage between two conductive layers can make the upset of free layer magnetic moment as long as reaching certain critical value.For the different magnetoresistance effects that adopt different materials, shape, size, this critical value can be different.Usually, can measure this critical value by known laboratory facilities.In the present embodiment, when upset free layer magnetic moment,, therefore greatly reduce the power consumption of device owing to almost do not have electric current to pass through the magnetoresistance effect unit.The magnetoresistance effect of present embodiment can be used as core cell be used for spinning logical device, nonvolatile memory, spin transistor and various transducer isospin electronics device.
The preparation method of present embodiment is simple, the rate of finished products height, and cost is low.
Present embodiment provides a kind of dual-potential magnetic multilayer film unit based on parallel face electric field.According to shown in Figure 6, this magnetoresistance effect unit comprises multilayer film core cell and magnetic moment control unit.
Wherein, the multilayer film core cell adopts double potential barrier type structure, comprise successively from the bottom to top resilient coating 1, down pinning layer 2, down nailed layer 3 and lower barrierlayer 4, free layer 5, go up barrier layer 4 ', go up nailed layer 3 ', go up pinning layer 2 ' and cover layer 6.The magnetic moment control unit comprises two conductive layers 9,10, two conductive layers 9,10 are all perpendicular to the face of magnetoresistance effect core cell, and the multilayer film core cell is between two conductive layers 9,10, and promptly the multilayer film core cell is arranged in two conductive layers, 9,10 formed electric fields.Have insulating barrier between the conductive layer of multilayer film core cell and the multilayer film core cell in the present embodiment, be used for conductive layer and multilayer film core cell are separated.Two conductive layers 9,10 are produced on the both sides of multilayer film core cell, and are filled with insulating barrier between two conductive layers 9,10 and the multilayer film core cell.
But the manufacturing materials of each layer and conductive layer and thickness reference example 1 repeat no more here in the multilayer film core cell of present embodiment.
In the present embodiment, when applying voltage on conductive layer, the free layer of magnetoresistance effect produces spin transfer torque, and free layer and interfacial dielectric layer generation field effect.Under the comprehensive function of these two kinds of mechanism,, the voltage between two conductive layers can make the upset of free layer magnetic moment as long as reaching certain critical value.For the different magnetoresistance effects that adopt different materials, shape, size, this critical value can be different.Usually, can measure this critical value by known laboratory facilities.In the present embodiment, when upset free layer magnetic moment,, therefore greatly reduce the power consumption of device owing to almost do not have electric current to pass through the magnetoresistance effect unit.The magnetoresistance effect of present embodiment can be used as core cell be used for spinning logical device, nonvolatile memory, spin transistor and various transducer isospin electronics device.
Present embodiment is a kind of dual-potential magnetic multilayer film.Identical with embodiment 2, the electric field that the conductive layer of present embodiment forms can directly act on described free layer, can avoid the magnetic moment switching process to be subjected to the influence of other layer of multilayer film core cell.
Present embodiment provides a kind of dual-potential magnetic multilayer film unit based on the parallel face electric field of local.According to shown in Figure 7, this magnetoresistance effect unit comprises multilayer film core cell and magnetic moment control unit.
Wherein, the multilayer film core cell adopts double potential barrier type structure, comprise successively from the bottom to top resilient coating 1, down pinning layer 2, down nailed layer 3 and lower barrierlayer 4, free layer 5, go up barrier layer 4 ', go up nailed layer 3 ', go up pinning layer 2 ' and cover layer 6.The magnetic moment control unit comprises two conductive layers 11,12, and the free layer of multilayer film core cell is between two conductive layers 11,12, and promptly the free layer of multilayer film core cell is arranged in two conductive layers, 11,12 formed electric fields.The direction of two conductive layers 11,12 is consistent with embodiment 6, the difference of the conductive layer 11,12 of present embodiment and the conductive layer of embodiment 2 is that conductive layer only is arranged on the position corresponding to free layer, and the height of conductive layer (referring to perpendicular to the size on the described face direction) is generally 1～1.5 with the ratio of described free layer thickness.Two conductive layers 11,12 are produced on the both sides of multilayer film core cell, and are filled with insulating barrier between the free layer of two conductive layers 11,12 and multilayer film core cell.
But the manufacturing materials of each layer and conductive layer and thickness reference example 1 repeat no more here in the multilayer film core cell of present embodiment.
In the present embodiment, when applying voltage on conductive layer, the free layer of magnetoresistance effect produces spin transfer torque, and free layer and interfacial dielectric layer generation field effect.Under the comprehensive function of these two kinds of mechanism,, the voltage between two conductive layers can make the upset of free layer magnetic moment as long as reaching certain critical value.For the different magnetoresistance effects that adopt different materials, shape, size, this critical value can be different.Usually, can measure this critical value by known laboratory facilities.In the present embodiment, when upset free layer magnetic moment,, therefore greatly reduce the power consumption of device owing to almost do not have electric current to pass through the magnetoresistance effect unit.The magnetoresistance effect of present embodiment can be used as core cell be used for spinning logical device, nonvolatile memory, spin transistor and various transducer isospin electronics device.
Present embodiment is a kind of dual-potential magnetic multilayer film.Identical with embodiment 3, the electric field that the conductive layer of present embodiment forms can directly act on described free layer, can avoid the magnetic moment switching process to be subjected to the influence of other layer of multilayer film core cell.Further, because present embodiment has adopted local electric field, this electric field only acts on free layer, and therefore, the electric field influence that present embodiment can also avoid the magnetic moment switching process to be applied arrives other layer of multilayer film core cell.
Present embodiment provides the method for the magnetoresistance effect unit of a kind of embodiment of preparation 1, this method comprises the following steps (to need to prove, following step 2 is to prepare a kind of method that unipotential is built structure magnetic multilayer film core cell to 6, and step 2 is to the 6 technology replacements that can build structure magnetic multilayer film core cell with other known preparation unipotential):
1) selects a substrate Si/SiO
2, thick 500 μ m after the conventional method cleaning, utilize the film growth apparatus magnetically controlled sputter method to deposit lower conducting layer Ru, thickness 100nm;
2) utilize magnetically controlled sputter method on lower conducting layer, to deposit SiO
2Insulating barrier, thickness 50nm, deposit each layer of magnetoresistance effect then successively, be that Ta (5nm)/Ru (20nm)/Ta (5nm) is as bottom buffer layer 1, IrMn (12nm) is as pinning layer 2, CoFeB (4nm) is as nailed layer 3, and MgO (2nm) is as barrier layer 4, CoFeB (4nm) as free layer 5 and Ru (10nm)/Cu (20nm)/Ru (10nm) as cover layer 6.The growth conditions of above-mentioned magnetoresistance effect: be equipped with end vacuum: 1 * 10
-6Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate; And when deposition pinning layer 2, nailed layer 3 and free layer 5, apply the 100Oe flat magnetic field and induce magnetospheric uniaxial anisotropy.
3) adopt micro fabrication, with step 2) in deposited magnetoresistance effect and be processed into oval ring, long axis of ellipse is the direction of magnetospheric uniaxial anisotropy;
The concrete steps of described micro fabrication are: at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure or electron beam exposure apparatus, according to required ellipse the sheet base is exposed, then development, photographic fixing, back baking are carved into ellipse to this magnetoresistance effect with ion etching process then.
4) on the oval-shaped magnetoresistance effect that the etching that step 3) obtains is shaped, utilize the SiO of magnetron sputtering deposition thickness for 50nm
2Insulating barrier is buried magnetoresistance effect and is isolated;
5) utilize stripping technology to remove photoresist, the magnetoresistance effect of burying under the insulating barrier is exposed.
6) Cu that utilizes magnetron sputtering deposition thickness 100nm utilizes conventional micro fabrication again as electrode layer, and electrode layer is processed into electrode shape;
7) utilize the SiO of magnetron sputtering deposit thickness 50nm on electrode layer
2As the Cu of insulating barrier and 100nm as top conductive layer.Promptly obtain novel magnetic multilayer film provided by the present invention unit, when upper and lower conductive layers applied voltage, its magnetoresistance effect was in the electric field of formation.
Present embodiment provides the method for the magnetoresistance effect unit of a kind of embodiment of preparation 2, this method comprises the following steps (to need to prove, following step 1 is to prepare a kind of method that unipotential is built structure magnetic multilayer film core cell to 5, and step 1 is to the 5 technology replacements that can build structure magnetic multilayer film core cell with other known preparation unipotential):
1) selects a substrate Si/SiO
2Thick 500 μ m, after the conventional method cleaning, utilize magnetically controlled sputter method to deposit each layer of magnetoresistance effect successively, be Ta (5nm)/Ru (20nm)/Ta (5nm) as bottom buffer layer 1, IrMn (12nm) is as pinning layer 2, CoPt (3nm)/CoFeB (1nm) is as nailed layer 3, MgO (2.5nm) is as barrier layer 4, CoFeB (1nm)/CoPt (3nm) as free layer 5 and Ru (10nm)/Cu (20nm)/Ru (10nm) as cover layer 6.The growth conditions of above-mentioned magnetoresistance effect: be equipped with end vacuum: 1 * 10
-6Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate.
2) adopt micro fabrication, be processed into oval ring with having deposited magnetoresistance effect in the step 1), long axis of ellipse is the direction of magnetospheric uniaxial anisotropy;
The concrete steps of described micro fabrication are: at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure or electron beam exposure apparatus, according to required ellipse the sheet base is exposed, then development, photographic fixing, back baking are carved into oval ring to this magnetoresistance effect with ion etching process then.
3) in step 2) on the oval-shaped magnetoresistance effect that is shaped of the etching that obtains, utilize the SiO of magnetron sputtering deposition thickness for 50nm
2Insulating barrier is buried magnetoresistance effect and is isolated;
4) utilize stripping technology to remove photoresist, the magnetoresistance effect of burying under the insulating barrier is exposed.
5) Cu that utilizes magnetron sputtering deposition thickness 100nm utilizes conventional micro fabrication again as electrode layer, and electrode layer is processed into electrode shape;
6) utilize micro fabrication, cover insulating barrier on the major axis both sides of above-described oval magnetoresistance effect, and on insulating barrier, prepare the groove that is used to hold vertical conductive layer 9,10.
The concrete steps of described micro fabrication are: at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure or electron beam exposure apparatus, according to required conductive layer shape the sheet base is exposed, then development, photographic fixing, back baking, carve the groove of the shape of conductive layer then with ion etching process, other zone still has photoresist to bury;
7) Cu that utilizes magnetron sputtering deposition 100nm removes photoresist by stripping technology then as conductive layer, promptly peels off the metal Cu of conductive layer with exterior domain.Promptly obtain novel magnetic multilayer film provided by the present invention unit, when two vertical conductive layers applied voltage, its magnetoresistance effect was in the electric field of formation.
Present embodiment provides the method for the magnetoresistance effect unit of a kind of embodiment of preparation 3, this method comprises the following steps (to need to prove, following step 1 is to prepare a kind of method that unipotential is built structure magnetic multilayer film core cell to 5, and step 1 is to the 5 technology replacements that can build structure magnetic multilayer film core cell with other known preparation unipotential):
1) selects a substrate Si/SiO
2Thick 500 μ m, after the conventional method cleaning, utilize magnetically controlled sputter method to deposit each layer of magnetoresistance effect successively, be Ta (5nm)/Ru (20nm)/Ta (5nm) as bottom buffer layer 1, IrMn (12nm) is as pinning layer 2, CoFeB (4nm) is as nailed layer 3, MgO (2nm) is as barrier layer 4, CoFeB (4nm) as free layer 5 and Ru (10nm)/Cu (20nm)/Ru (10nm) as cover layer 6.The growth conditions of above-mentioned magnetoresistance effect: be equipped with end vacuum: 1 * 10
-6Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate; And when deposition pinning layer 2, nailed layer 3 and free layer 5, apply the 100Oe flat magnetic field and induce magnetospheric uniaxial anisotropy.
2) adopt micro fabrication, be processed into ellipse with having deposited magnetoresistance effect in the step 1), long axis of ellipse is the direction of magnetospheric uniaxial anisotropy;
The concrete steps of described micro fabrication are: at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure or electron beam exposure apparatus, according to required ellipse the sheet base is exposed, then development, photographic fixing, back baking are carved into oval ring to this magnetoresistance effect with ion etching process then.
3) in step 2) on the oval-shaped magnetoresistance effect that is shaped of the etching that obtains, utilize the SiO of magnetron sputtering deposition thickness for 100nm
2Insulating barrier is buried magnetoresistance effect and is isolated;
4) utilize stripping technology to remove photoresist, the magnetoresistance effect of burying under the insulating barrier is exposed.
5) Cu that utilizes magnetron sputtering deposition thickness 100nm utilizes conventional micro fabrication again as electrode layer, and electrode layer is processed into electrode shape;
6) utilize micro fabrication, cover insulating barrier on the major axis both sides of above-described oval magnetoresistance effect, and on insulating barrier, prepare the groove that is used to hold vertical conductive layer 11,12.
The concrete steps of described micro fabrication are: at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure or electron beam exposure apparatus, according to required conductive layer shape the sheet base is exposed, then development, photographic fixing, back baking, carve the shape of this conductive layer then with ion etching process, and carved free layer and promptly stop; Utilizing glue-dispenser to soak then removes photoresist; Can also utilize reactive ion etching machine to assist in case of necessity removes photoresist.
7) utilize ion beam assisted depositing method deposition to carve type Pt as conductive layer, an end thickness of close magnetoresistance effect is 4nm.Promptly obtain novel magnetic multilayer film provided by the present invention unit, its top view as shown in Figure 4, when two vertical conductive layers applied voltage, the free layer of its magnetoresistance effect was in the electric field of formation.In the b part of Fig. 4, the flat shape of magnetoresistance effect core cell (being the horizontal cross-section) is an oval ring, and vertically the flat shape (being the horizontal cross-section) of conductive layer is for trapezoidal.
Present embodiment provides the method for the magnetoresistance effect unit of a kind of embodiment of preparation 4, this method comprises the following steps (to need to prove, following step 1 is to prepare a kind of method that unipotential is built structure magnetic multilayer film core cell to 5, and step 1 is to the 5 technology replacements that can build structure magnetic multilayer film core cell with other known preparation unipotential):
1) selects a substrate Si/SiO
2Thick 500 μ m, after the conventional method cleaning, utilize magnetically controlled sputter method to deposit each layer of magnetoresistance effect successively, be Ta (5nm)/Ru (20nm)/Ta (5nm) as bottom buffer layer 1, IrMn (12nm) is as pinning layer 2, CoPt (3nm)/CoFeB (1nm) is as nailed layer 3, AlO (2nm) is as barrier layer 4, CoFeB (1nm)/CoPt (3nm) as free layer 5 and Ru (10nm)/Cu (20nm)/Ru (10nm) as cover layer 6.The growth conditions of above-mentioned magnetoresistance effect: be equipped with end vacuum: 1 * 10
-6Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate.
2) adopt micro fabrication, be processed into ellipse with having deposited magnetoresistance effect in the step 1), long axis of ellipse is the direction of magnetospheric uniaxial anisotropy;
The concrete steps of described micro fabrication are: at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure or electron beam exposure apparatus, according to required ellipse the sheet base is exposed, then development, photographic fixing, back baking are carved into oval ring to this magnetoresistance effect with ion etching process then.
3) in step 2) on the oval-shaped magnetoresistance effect that is shaped of the etching that obtains, utilize the SiO of magnetron sputtering deposition thickness for 100nm
2Insulating barrier is buried magnetoresistance effect and is isolated;
4) utilize stripping technology to remove photoresist, the magnetoresistance effect of burying under the insulating barrier is exposed.
5) Cu that utilizes magnetron sputtering deposition thickness 100nm utilizes conventional micro fabrication again as electrode layer, and electrode layer is processed into electrode shape;
6) utilize the focused-ion-beam lithography method, cover insulating barrier on the major axis both sides of above-described oval magnetoresistance effect, and on insulating barrier, etch and be used to hold vertical conductive layer 11 ', 12 ' groove.
7) utilize ion beam assisted depositing method deposition to carve type Pt as conductive layer 11 ', 12 ', an end thickness of close magnetoresistance effect is 4nm.When two vertical conductive layers applied voltage, the nailed layer of its magnetoresistance effect was in the electric field of formation.
8) utilize micro fabrication and magnetron sputtering deposition insulating barrier that the conductive layer in the step 7) 11 ', 12 ' is isolated, thickness of insulating layer is identical with barrier layer thickness, and then utilize ion beam assisted depositing method deposition wedge shape Pt as conductive layer 11,12, suitable near an end thickness of magnetoresistance effect free layer with free layer.Promptly obtain novel magnetic multilayer film provided by the present invention unit, when vertical conductive layer applied voltage, the nailed layer of its magnetoresistance effect and free layer were in the electric field of formation.
Present embodiment provides the method for the magnetoresistance effect unit of a kind of embodiment of preparation 5, this method comprises the following steps (to need to prove, following step 2 is to 6 being a kind of methods of preparation dual potential barrier structure magnetoresistance effect core cell, and step 2 is to 6 can be with the technology replacement of other known preparation dual potential barrier structure magnetoresistance effect core cell):
1) selects a substrate Si/SiO
2, thick 500 μ m after the conventional method cleaning, utilize the film growth apparatus magnetically controlled sputter method to deposit lower conducting layer Ru, thickness 100nm;
2) utilize magnetically controlled sputter method on lower conducting layer, to deposit SiO
2Insulating barrier, thickness 50nm, deposit each layer of magnetoresistance effect then successively, promptly Ta (5nm)/Ru (20nm)/Ta (5nm) is as bottom buffer layer 1, and IrMn (12nm) is as pinning layer 2, CoFe (4nm) is as nailed layer 3, AlO (1nm) is as barrier layer 4, and CoFeB (4nm) is as free layer 5, and AlO (1nm) is as barrier layer 4 ', CoFe (4nm) is as nailed layer 3 ', IrMn (12nm) as pinning layer 2 ' and Ru (10nm)/Cu (20nm)/Ru (10nm) as cover layer 6.The growth conditions of above-mentioned magnetoresistance effect: be equipped with end vacuum: 1 * 10
-6Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate; And, apply the 100Oe flat magnetic field and induce magnetospheric uniaxial anisotropy deposition pinning layer 2 and 2 ', nailed layer 3 and 3 ' and during free layer 5.
3) adopt micro fabrication, with step 2) in deposited magnetoresistance effect and be processed into ellipse, long axis of ellipse is the direction of magnetospheric uniaxial anisotropy;
The concrete steps of described micro fabrication are: at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure or electron beam exposure apparatus, according to required ellipse the sheet base is exposed, then development, photographic fixing, back baking are carved into oval ring to this magnetoresistance effect with ion etching process then.
4) on the oval-shaped magnetoresistance effect that the etching that step 3) obtains is shaped, utilize the SiO of magnetron sputtering deposition thickness for 50nm
2Insulating barrier is buried magnetoresistance effect and is isolated;
5) utilize stripping technology to remove photoresist, the magnetoresistance effect of burying under the insulating barrier is exposed.
6) Cu that utilizes magnetron sputtering deposition thickness 100nm utilizes conventional micro fabrication again as electrode layer, and electrode layer is processed into electrode shape;
7) utilize the SiO of magnetron sputtering deposit thickness 50nm on electrode layer
2As the Cu of insulating barrier and 100nm as top conductive layer.Promptly obtain novel magnetic multilayer film provided by the present invention unit, when upper and lower conductive layers applied voltage, its magnetoresistance effect was in the electric field of formation.
Embodiment 13
Present embodiment provides the method for the magnetoresistance effect unit of a kind of embodiment of preparation 6, this method comprises the following steps (to need to prove, following step 1 is to 5 being a kind of methods of preparation dual potential barrier structure magnetoresistance effect core cell, and step 1 is to 5 can be with the technology replacement of other known preparation dual potential barrier structure magnetoresistance effect core cell):
1) selects a substrate Si/SiO
2Thick 500 μ m, after the conventional method cleaning, utilize magnetically controlled sputter method to deposit each layer of magnetoresistance effect successively, be that Ta (5nm)/Ru (20nm)/Ta (5nm) is as bottom buffer layer 1, IrMn (12nm) is as pinning layer 2, CoPt (4nm)/CoFeB (1nm) is as nailed layer 3, AlO (1nm) is as barrier layer 4, CoFe (1nm) is as free layer 5, AlO (1nm) is as barrier layer 4 ', and CoFeB (1nm)/CoPt (3nm) is as nailed layer 3 ', IrMn (12nm) as pinning layer 2 ' and Ru (10nm)/Cu (20nm)/Ru (10nm) as cover layer 6.The growth conditions of above-mentioned magnetoresistance effect: be equipped with end vacuum: 1 * 10
-6Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate.
2) adopt micro fabrication, be processed into oval ring with having deposited magnetoresistance effect in the step 1), long axis of ellipse is the direction of magnetospheric uniaxial anisotropy;
The concrete steps of described micro fabrication are: at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure or electron beam exposure apparatus, according to required ellipse the sheet base is exposed, then development, photographic fixing, back baking are carved into ellipse to this magnetoresistance effect with ion etching process then.
3) in step 2) on the oval-shaped magnetoresistance effect that is shaped of the etching that obtains, utilize the SiO of magnetron sputtering deposition thickness for 50nm
2Insulating barrier is buried magnetoresistance effect and is isolated;
4) utilize stripping technology to remove photoresist, the magnetoresistance effect of burying under the insulating barrier is exposed.
5) Cu that utilizes magnetron sputtering deposition thickness 100nm utilizes conventional micro fabrication again as electrode layer, and electrode layer is processed into electrode shape;
6) utilize micro fabrication, cover insulating barrier on the major axis both sides of above-described oval magnetoresistance effect, and on insulating barrier, prepare the groove that is used to hold vertical conductive layer 9,10.
The concrete steps of described micro fabrication are: at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure or electron beam exposure apparatus, according to required conductive layer shape the sheet base is exposed, dry by the fire then development, photographic fixing, back, carves the shape of this conductive layer then with ion etching process;
7) Cu that utilizes magnetron sputtering deposition 100nm removes photoresist by stripping technology then as conductive layer.Promptly obtain novel magnetic multilayer film provided by the present invention unit, when two vertical conductive layers applied voltage, its magnetoresistance effect was in the electric field of formation.
Embodiment 14
Present embodiment provides the method for the magnetoresistance effect unit of a kind of embodiment of preparation 7, this method comprises the following steps (to need to prove, following step 1 is to 5 being a kind of methods of preparation dual potential barrier structure magnetoresistance effect core cell, and step 1 is to 5 can be with the technology replacement of other known preparation dual potential barrier structure magnetoresistance effect core cell):
1) selects a substrate Si/SiO
2Thick 500 μ m, after the conventional method cleaning, utilize magnetically controlled sputter method to deposit each layer of magnetoresistance effect successively, be that Ta (5nm)/Ru (20nm)/Ta (5nm) is as bottom buffer layer 1, IrMn (12nm) is as pinning layer 2, CoFe (4nm) is as nailed layer 3, MgO (2nm) is as barrier layer 4, CoFeB (4nm) is as free layer 5, MgO (2nm) is as barrier layer 4, and CoFe (4nm) is as nailed layer 3 ', IrMn (12nm) as pinning layer 2 ' and Ru (10nm)/Cu (20nm)/Ru (10nm) as cover layer 6.The growth conditions of above-mentioned magnetoresistance effect: be equipped with end vacuum: 1 * 10
-6Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3～1.1 dust/second; Growth time: film thickness/growth rate; And when deposition pinning layer 2, nailed layer 3 and free layer 5, apply the 100Oe flat magnetic field and induce magnetospheric uniaxial anisotropy.
2) adopt micro fabrication, be processed into oval ring with having deposited magnetoresistance effect in the step 1), long axis of ellipse is the direction of magnetospheric uniaxial anisotropy;
The concrete steps of described micro fabrication are: at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure or electron beam exposure apparatus, according to required ellipse the sheet base is exposed, then development, photographic fixing, back baking are carved into ellipse to this magnetoresistance effect with ion etching process then.
3) in step 2) on the oval-shaped magnetoresistance effect that is shaped of the etching that obtains, utilize the SiO of magnetron sputtering deposition thickness for 100nm
2Insulating barrier is buried magnetoresistance effect and is isolated;
4) utilize stripping technology to remove photoresist, the magnetoresistance effect of burying under the insulating barrier is exposed.
5) Cu that utilizes magnetron sputtering deposition thickness 100nm utilizes conventional micro fabrication again as electrode layer, and electrode layer is processed into electrode shape;
6) utilize micro fabrication, cover insulating barrier on the major axis both sides of above-described oval magnetoresistance effect, and on insulating barrier, prepare the groove that is used to hold vertical conductive layer 9,10.
The concrete steps of described micro fabrication are: at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure or electron beam exposure apparatus, according to required conductive layer shape the sheet base is exposed, then development, photographic fixing, back baking, carve the shape of this conductive layer then with ion etching process, and carved free layer and promptly stop; Utilizing glue-dispenser to soak then removes photoresist; Can also utilize reactive ion etching machine to assist in case of necessity removes photoresist.
7) utilize ion beam assisted depositing method deposition to carve type Pt as conductive layer, an end thickness of close magnetoresistance effect is 4nm.Promptly obtain novel magnetic multilayer film provided by the present invention unit, when two vertical conductive layers applied voltage, the free layer of its magnetoresistance effect was in the electric field of formation.
Above said content; only for the concrete execution mode of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed in protection scope of the present invention.
Claims (13)
1. magnetoresistance effect unit, comprise magnetoresistance effect core cell and magnetic moment control unit, described multilayer film core cell comprises free layer, and described magnetic moment control unit comprises two conductive layers, and the free layer of described multilayer film core cell is arranged in described two formed electric fields of conductive layer.
2. magnetoresistance effect according to claim 1 unit is characterized in that, described two conductive layers all are parallel to the face of described magnetoresistance effect core cell.
3. magnetoresistance effect according to claim 1 unit is characterized in that, described two conductive layers are all perpendicular to the face of described magnetoresistance effect core cell.
4. magnetoresistance effect according to claim 3 unit is characterized in that, the ratio of the height of described conductive layer and described free layer thickness is 1～1.5.
5. according to claim 1,3 or 4 described magnetoresistance effect unit, it is characterized in that described magnetoresistance effect core cell adopts unipotential base type structure; The magnetoresistance effect core cell of unipotential base type structure also comprises resilient coating, pinning layer, nailed layer and the barrier layer that is positioned at described free layer downside, and the cover layer that is positioned at described free layer upside.
6. magnetoresistance effect according to claim 5 unit, it is characterized in that, described magnetic moment control unit also comprises two second conductive layers, described nailed layer is arranged in described two the second formed electric fields of conductive layer, and the ratio of the height of described nailed layer and described nailed layer thickness is 1～1.5.
7. according to claim 1,3 or 4 described magnetoresistance effect unit, it is characterized in that described multilayer film core cell adopts double potential barrier type structure; The magnetoresistance effect core cell of double potential barrier type also comprises the resilient coating that is positioned at described free layer downside, pinning layer, nailed layer and lower barrierlayer down down, and be positioned at described free layer upside last barrier layer, go up nailed layer, go up pinning layer and cover layer.
8. profit requires 1 described magnetoresistance effect unit, it is characterized in that, the plane geometric shape of described preparation magnetoresistance effect core cell is ellipse, rectangle, circle, square, polygon, annular, oval ring or polygon annular.
9. magnetoresistance effect according to claim 1 unit is characterized in that, described conductive layer thickness is 2～200nm, and manufacturing materials is Ta, Ru, Cr, Au, Ag, Pt, W, Ti, Cu, Al, SrTiO
3, LaAlO
3Or CeO
2
10. the preparation method of a magnetoresistance effect unit, this method comprises the following steps:
1) on substrate, prepares lower conductiving layer;
2) preparation magnetoresistance effect core cell on described lower conductiving layer, the face of described magnetoresistance effect core cell is parallel with described lower conductiving layer;
3) insulating barrier in the preparation of the top of described magnetoresistance effect core cell prepares conductive layer on the insulating barrier on described then.
11. the preparation method of magnetoresistance effect according to claim 10 unit, it is characterized in that described step 2) in, also be included in preparation magnetoresistance effect core cell before, preparation earlier is insulating barrier down, then the described magnetoresistance effect core cell of preparation on described insulating barrier down.
12. the preparation method of a magnetoresistance effect unit, this method comprises the following steps:
1) preparation magnetoresistance effect core cell on substrate;
2) prepare insulating barrier in the both sides of described preparation magnetoresistance effect core cell,, the free layer of described magnetoresistance effect core cell is between described two vertical conductive layers at two vertical conductive layers of described insulating barrier outside preparation.
13. the magnetic moment of the described magnetoresistance effect of claim 1 unit upset control method, this method comprises the following steps:
1) obtains the upset critical voltage of described magnetoresistance effect unit;
2) between described two conductive layers, apply the voltage that is not less than described upset critical voltage, realize the magnetic moment upset, promptly write operation is carried out in described magnetoresistance effect unit.
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| CN102645805A (en) * | 2012-02-24 | 2012-08-22 | 北京京东方光电科技有限公司 | Array base plate, preparation method of array base plate and liquid crystal display |
| CN103137855A (en) * | 2011-12-01 | 2013-06-05 | 索尼公司 | Memory element and memory apparatus |
| CN103545443A (en) * | 2012-07-17 | 2014-01-29 | 三星电子株式会社 | Magnetic device and method of manufacturing the same |
| CN104777691A (en) * | 2015-05-06 | 2015-07-15 | 京东方科技集团股份有限公司 | Display device and manufacturing method thereof |
| CN105633109A (en) * | 2015-09-22 | 2016-06-01 | 上海磁宇信息科技有限公司 | Magnetic random access memory memory-unit and read-write method and anti-interference method therefor |
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| CN103137855A (en) * | 2011-12-01 | 2013-06-05 | 索尼公司 | Memory element and memory apparatus |
| CN102645805A (en) * | 2012-02-24 | 2012-08-22 | 北京京东方光电科技有限公司 | Array base plate, preparation method of array base plate and liquid crystal display |
| CN102645805B (en) * | 2012-02-24 | 2014-08-20 | 北京京东方光电科技有限公司 | Array base plate, preparation method of array base plate and liquid crystal display |
| CN103545443A (en) * | 2012-07-17 | 2014-01-29 | 三星电子株式会社 | Magnetic device and method of manufacturing the same |
| CN104777691A (en) * | 2015-05-06 | 2015-07-15 | 京东方科技集团股份有限公司 | Display device and manufacturing method thereof |
| CN104777691B (en) * | 2015-05-06 | 2018-01-26 | 京东方科技集团股份有限公司 | Display device and preparation method thereof |
| CN105633109A (en) * | 2015-09-22 | 2016-06-01 | 上海磁宇信息科技有限公司 | Magnetic random access memory memory-unit and read-write method and anti-interference method therefor |
| CN105633109B (en) * | 2015-09-22 | 2019-04-26 | 上海磁宇信息科技有限公司 | Magnetic RAM memory unit and its read-write and anti-interference method |
| CN109904291A (en) * | 2019-02-13 | 2019-06-18 | 湖北大学 | A kind of spin electric device and preparation method thereof, regulation method |
| CN110527952A (en) * | 2019-07-26 | 2019-12-03 | 沈阳工业大学 | A kind of barium titanate/nickel acid lanthanum ferroelectric superlattice material and preparation method thereof |
| CN117202765A (en) * | 2023-10-26 | 2023-12-08 | 北京科技大学 | Magnetic multilayer film for reducing spin-orbit moment critical current density and preparation method thereof |
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