CN102645805A - Array base plate, preparation method of array base plate and liquid crystal display - Google Patents
Array base plate, preparation method of array base plate and liquid crystal display Download PDFInfo
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- CN102645805A CN102645805A CN2012100466568A CN201210046656A CN102645805A CN 102645805 A CN102645805 A CN 102645805A CN 2012100466568 A CN2012100466568 A CN 2012100466568A CN 201210046656 A CN201210046656 A CN 201210046656A CN 102645805 A CN102645805 A CN 102645805A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
Abstract
The embodiment of the invention provides an array base plate, a preparation method of the array base plate and a liquid crystal display. The array base plate comprises a base plate, wherein a control electrode layer, a giant magnetoresistance layer, an insulation layer, a pixel electrode layer and a signal electrode layer are sequentially arranged on the base plate, the control electrode layer, the giant magnetoresistance layer and the insulation layer jointly form a giant magnetoresistance passive matrix, the signal electrode layer is connected with the giant magnetoresistance layer, the pixel electrode layer is connected with the giant magnetoresistance layer, the giant magnetoresistance layer comprises an anti-ferromagnetic nailing and pricking layer, a ferromagnetic nailed and pricked layer, a nonmagnetic isolation layer and a soft magnetic layer in sequential arrangement in the direction from positions near the base plate to positions far away from the base plate, the anti-ferromagnetic coupling is adopted between the anti-ferromagnetic nailing and pricking layer and the ferromagnetic nailed and pricked layer, and the ferromagnetic coupling is adopted between the ferromagnetic nailed and pricked layer and the soft magnetic layer. The array base plate has the advantages that the Ion characteristic of the liquid crystal display can be effectively improved, the charging speed is accelerated, and the brightness is improved.
Description
Technical field
The present invention relates to the LCD Technology field, relate in particular to a kind of array base palte and preparation method thereof and LCD.
Background technology
Traditional Thin Film Transistor-LCD (TFT-LCD, Thin-Film Technology Liquid Crystal Display) has occupied leading position with the characteristics of the low radiation of its low-power consumption on flat panel display market.The core component of TFT-LCD is a thin film transistor (TFT) TFT electrode because the multi-crystal TFT technology for preparing electrode is complicated, can not large-area preparation etc. shortcoming, the overwhelming majority that uses of TFT-LCD is the hydrogenation non crystal silicon film transistor at present.
But amorphous silicon hydride TFT characteristic is relatively poor, and especially ON state current (Ion) is on the low side, cause the Ion characteristic of LCD relatively poor, and the charging rate of LCD is slower; And amorphous silicon hydride is very sensitive to illumination; Stability is not high; For ensureing the TFT characteristic, the aperture opening ratio of amorphous silicon hydride is lower, causes thus in the unit pixel of LCD; The area in actual light-permeable district and the ratio of the unit pixel total area are lower, make the brightness of LCD be affected.
In sum, need seek the performance that new structure improves LCD.
Summary of the invention
The embodiment of the invention provides a kind of array base palte and preparation method thereof and LCD, the slow and lower problem of brightness of, charging rate relatively poor in order to the Ion characteristic that solves existing LCD.
A kind of array base palte, this array base palte comprises substrate;
By near substrate to direction away from substrate; On substrate, deposit control electrode layer, giant magnetoresistance layer, insulation course, pixel electrode layer and signal electrode layer successively; Wherein, control electrode layer, giant magnetoresistance layer and insulation course constitute the giant magnetoresistance active matrix jointly;
To each pixel region, the signal electrode layer links to each other with the giant magnetoresistance layer, and pixel electrode layer links to each other with the giant magnetoresistance layer;
Said giant magnetoresistance layer by near substrate to direction away from substrate; Comprise antiferromagnetic pinning layer, ferromagnetic nailed layer, non-magnetic separation layer and soft magnetosphere successively; Between antiferromagnetic pinning layer and the ferromagnetic nailed layer is antiferromagnetic coupling, is the ferromagnetism coupling between ferromagnetic nailed layer and the soft magnetosphere.
A kind of preparation method of array base palte, this method comprises:
Deposition of transparent conductive film on substrate forms the control electrode layer pattern on said nesa coating, and with said control electrode layer pattern crystallization;
On the substrate that has the control electrode layer pattern, deposit antiferromagnetic pinning layer successively, ferromagnetic nailed layer, non-magnetic separation layer and soft magnetosphere, and form the giant magnetoresistance layer pattern;
Depositing insulating layer on the substrate that has control electrode layer pattern and giant magnetoresistance layer pattern to each pixel region, forms two via holes on said insulation course;
Having control electrode layer pattern, giant magnetoresistance layer pattern, having on the substrate of insulation course of via hole and continue deposition of transparent conductive film; On said nesa coating, form the pixel electrode layer pattern; To each pixel region; Pixel electrode layer links to each other with the giant magnetoresistance layer through a via hole on the insulation course, and with said pixel electrode layer pattern crystallization;
Deposition signal electrode layer on the substrate that has control electrode layer pattern, giant magnetoresistance layer pattern, insulation course, pixel electrode layer pattern with via hole; And formation signal electrode; To each pixel region, the signal electrode layer links to each other with the giant magnetoresistance layer through another via hole on the insulation course.
The embodiment of the invention also provides a kind of LCD that comprises array base palte provided by the invention.
The scheme that provides according to the embodiment of the invention; Utilize the giant magnetoresistance characteristic that resistance differs greatly under different magnetic moment direction; Structure comprises the giant magnetoresistance layer of antiferromagnetic coupling relation and ferromagnetism coupled relation, thereby can change the resistance sizes of giant magnetoresistance layer through the direction of control magnetic moment; The giant magnetoresistance layer is used as switch; With respect to the LCD that comprises tft array substrate, utilize the array base palte that comprises the giant magnetoresistance layer provided by the invention to replace the tft array substrate in the available liquid crystal display after, can effectively improve LCD the Ion characteristic, accelerate charging rate and improve brightness.
Description of drawings
The structural representation of the array base palte that Fig. 1 provides for the embodiment of the invention one;
The array base palte that Fig. 2 provides for the embodiment of the invention one is to the diagrammatic cross-section of a pixel region;
The principle of work synoptic diagram of the giant magnetoresistance layer that Fig. 3 (a) provides for the embodiment of the invention one;
The principle of work synoptic diagram of the giant magnetoresistance layer that Fig. 3 (b) provides for the embodiment of the invention one;
The preparation method's of a kind of array base palte that Fig. 4 provides for the embodiment of the invention two flow chart of steps.
Embodiment
Magnetic metal and alloy generally all have the magneto-resistor phenomenon, and so-called magneto-resistor is meant the phenomenon that resistance changes under certain magnetic field, and people call magneto-resistor to this phenomenon, and in the magnetic resistance structure of tunnel junction, magnetoresistance effect can reach 100% even more.So-called giant magnetoresistance just is meant that resistance sharply reduces under certain magnetic field, and the amplitude that generally reduces is than surplus the magneto-resistor numerical value high approximately 10 of common magnetic metal and alloy material times.The Kent professor research group of Paris, FRA university in 1988 has at first found giant magnetoresistance effect in iron/chromium (Fe/Cr) multilayer film, caused very big repercussion in the world.The nineties in 20th century, people are at iron/copper (Fe/Cu), iron/aluminium (Fe/Al), and iron/gold (Fe/Au), cobalt/copper (Co/Cu) has been observed significant giant magnetoresistance effect in the multilayer film of cobalt/silver (Co/Ag) and cobalt/gold nanostructureds such as (Co/Au).
Except electric charge, electronics also has an intrinsic nature that is called as " spin ", and promptly the uniform charged spheroid is around a certain axial rotation.On the spheroid arbitrarily the rotational trajectory of any be a circle, the plane at circle place is perpendicular to turning axle.If regard electronics the spheroid of uniform charged as, then be equivalent to the electric current circle during spheroid rotation.Because of an electron is negatively charged, sense of current is opposite with sense of rotation.The electrical current circle can produce magnetic field, so spin motion is corresponding to a magnetic moment.Traditional partly lead the electric charge that microelectronic component has only utilized electronics, then be left in the basket as the spin of another natural disposition of electronics.Giant magnetoresistance utilizes the electronic spin effect exactly; Because the electronic spin mean free path is long; Electronics still can keep its spin orientation in passing through certain thickness film or this multilayer film process, only when running into the film of opposite magnetic moment, just scattering can take place.Through changing the direction of magnetic moment in the multilayer film, whether can control the scattering of electronics in multilayer film.Repeatedly scattering takes place compare with the electronics that scattering does not take place, the obstruction that the former electronics runs into is bigger, thereby resistance is bigger.
Whether the electronics through spinning in the control giant magnetoresistance scattering takes place, and can control the resistance sizes of giant magnetoresistance.Scheme provided by the invention just is based on this specific character of giant magnetoresistance, giant magnetoresistance is applied in the LCD uses as switch, with the brightness of raising LCD, and increases ON state current, improves the Ion characteristic of LCD.Simultaneously, because the giant magnetoresistance charging rate is very fast, can also improve the charge characteristic of LCD to a certain extent.
The antiferromagnetic coupling that the embodiment of the invention relates to is meant and has strong exchange biased effect between ferromagnetic material and the antiferromagnet; Make that the magnetic moment of ferromagnetic material is opposite with antiferromagnet interface magnetic moment; Need bigger coercive force could the magnetic moment of ferromagnetic material be overturn, coercive force is meant the required power of magnet magnetized state of destroying.Be antiferromagnet pass through antiferromagnetic coupling with the magnetic moment pinning of ferromagnetic layer (promptly fixing) on fixed-direction.
The coupling of ferromagnetism that the embodiment of the invention relates to is meant between ferromagnetic material and the ferromagnetic material because the effect of intercoupling of natural magnetic moments, and the direction of two-layer magnetic moment is tending towards identical, along with the power of the variation coupling of two-layer distance can change.A little less than the more antiferromagnetic pinning stiffness of coupling of the intensity of ferromagnetic coupling was wanted, the effect magnetic moment that receives externally-applied magnetic field can deflect.
The present invention program is described with each embodiment below in conjunction with Figure of description.
Embodiment one,
The embodiment of the invention one provides a kind of array base palte, and the structural representation of this array base palte is as shown in Figure 1, has specifically illustrated the structural representation that is directed against a pixel region in this array base palte among Fig. 1.This array base palte is as shown in Figure 2 to the diagrammatic cross-section of a pixel region shown in Figure 1.
This array base palte comprises substrate 1; By on substrate 1, depositing control electrode layer 2, giant magnetoresistance layer 3, insulation course 4, pixel electrode layer 5 and signal electrode layer 6 successively to direction away from substrate 1 near substrate 1; Wherein, control electrode layer 2, giant magnetoresistance layer 3 and insulation course 4 common formation giant magnetoresistance active matrixs.
To each pixel region, said insulation course 4 is provided with two via holes, and signal electrode layer 6 links to each other with giant magnetoresistance layer 3 through a via hole, and pixel electrode layer 5 links to each other with giant magnetoresistance layer 3 through another via hole.Concrete, as shown in Figure 2, to a pixel region shown in Fig. 1, signal electrode layer 6 can link to each other with giant magnetoresistance layer 3 through via hole A, and pixel electrode layer 5 can link to each other with giant magnetoresistance layer 3 through via hole A '.
Said giant magnetoresistance layer 3 by near substrate 1 to direction away from substrate 1; Comprise antiferromagnetic pinning layer 31, ferromagnetic nailed layer 32, non-magnetic separation layer 33 and soft magnetosphere 34 successively; Between antiferromagnetic pinning layer 31 and the ferromagnetic nailed layer 32 is antiferromagnetic coupling, is the ferromagnetism coupling between ferromagnetic nailed layer 32 and the soft magnetosphere 34.
Receiving the effect of externally-applied magnetic field, like the time spent of doing of electromagnetic field, because the strong exchange biased effect between antiferromagnetic pinning layer 31 and the ferromagnetic nailed layer 32, the magnetic moment of ferromagnetic nailed layer 32 is lived by pinning and is difficult to overturn.And a little less than the ferromagnetism coupling between ferromagnetic nailed layer 32 and the soft magnetosphere 34, the magnetic moment of soft magnetosphere 34 can deflect under the influence of outside magnetic field, and the magnetic moment direction of soft magnetosphere 34 will be consistent with outer magnetic field direction.
When the magnetic moment direction of the magnetic moment direction of soft magnetosphere 34 and ferromagnetic nailed layer 32 is identical; For the ease of explanation; Can set this moment giant magnetoresistance layer 3 is first pattern, shown in Fig. 3 (a) (e among the figure representes electronics), because the electronic spin polarised direction is identical with the magnetic moment direction of ferromagnetic nailed layer 32; During electric transmission; Can pass through soft magnetosphere 34, non-magnetic separation layer 33, ferromagnetic nailed layer 32 and do not receive the spin scattering, the obstruction that electric transmission receives is less, and the mean free path of electron motion is longer; When the magnetic moment direction of the magnetic moment direction of soft magnetosphere 34 and ferromagnetic nailed layer 32 not simultaneously; For the ease of explanation, can set this moment giant magnetoresistance layer 3 is second pattern, shown in Fig. 3 (b) (e among the figure representes electronics); At non-magnetic separation layer 33 and ferromagnetic nailed layer 32 at the interface; Because the magnetic moment direction of electronic spin polarised direction and ferromagnetic nailed layer 32 is opposite, electronics will receive the spin scattering, and the obstruction that electric transmission receives is bigger; Electric transmission only can be passed through soft magnetosphere 34, non-magnetic separation layer 33, therefore causes the mean free path of electron motion shorter.
Under first pattern, the obstruction that electric transmission receives is little, and giant magnetoresistance layer 3 resistance are less; Under second pattern, run into more obstruction in the electronic transmission process, giant magnetoresistance layer 3 resistance are bigger.When the voltage signal in the signal electrode layer 6 is added to giant magnetoresistance layer 3 through via hole, under first pattern voltage drop of giant magnetoresistance layer 3 less, the voltage drop of giant magnetoresistance layer 3 is more under second pattern.Because pixel electrode layer links to each other with giant magnetoresistance layer 3 through via hole, be V0 if establish the electromotive force of signal electrode, the electromotive force of pixel electrode layer is V1 under first pattern, the electromotive force of pixel electrode layer is V2, then V0-V1＞V0-V2 under second pattern.
Array base palte that present embodiment provides and color film be to box, and between array base palte and color film, charge into liquid crystal, can form LCD.
When this LCD shows; Optionally connect the control electrode (being appreciated that) that comprises in the control electrode layer 2, around the control electrode of connecting, will generate an electromagnetic field to comprising a plurality of control electrodes in the control electrode layer 2, corresponding at least one pixel region of control electrode; In the pixel region that intersects with the control electrode of connecting; Giant magnetoresistance layer 3 receives the influence of this electromagnetic field, and the magnetic moment direction of soft magnetosphere 34 will deflect into identical with this electromagnetic field direction, changes the direction of current in the control electrode; Control electrode electromagnetic field direction on every side can be changed, thereby the magnetic moment direction of soft magnetosphere 34 can be changed.Therefore, can be through the direction of current in the control electrode of control connection, in the pixel region that control electrode feasible and that connect intersects, the magnetic moment direction of the magnetic moment direction of soft magnetosphere 34 and ferromagnetic nailed layer 32 is opposite.
Comprise signal electrode in the signal electrode layer 6, comprise pixel electrode in the pixel electrode layer 5, to each pixel region, can be regarded as signal electrode and link to each other with the giant magnetoresistance layer through a via hole, pixel electrode links to each other with the giant magnetoresistance layer through another via hole.Then, to each pixel, signal electrode applies voltage V0, and in the pixel region that intersects with the control electrode of connecting, the electromotive force of pixel electrode is V2, and in the pixel region that does not intersect with the control electrode of connecting, the electromotive force of pixel electrode is V1.
Confirming on the array base palte after the electromotive force of each pixel electrode; The electromotive force that can adjust the pixel electrode (color film pixel electrode) on the color film is V1, and in the pixel region that then intersects with the control electrode of connecting, pixel electrode and color film pixel electrode electric potential difference are V1-V2; In the pixel region that does not intersect with the control electrode of connecting; The electric potential difference of pixel electrode and color film pixel electrode is 0, thus the pixel region place of intersecting with the control electrode of connecting, and the liquid crystal between array base palte and the color film deflects; With the crossing pixel region place of the control electrode of connecting, the liquid crystal between array base palte and the color film does not deflect.
Based on above principle, the demonstration of picture is realized in the order and the zone that can utilize circuit and programmed control liquid crystal to deflect.
Concrete, the material of said control electrode layer can be transparent conductive material, like tin indium oxide ITO.
The material of said antiferromagnetic pinning layer can be antiferromagnet, and like manganese iridium IrMn, manganese nickel Mn, nickel oxide NiO, manganese iron FeMn, the material of said antiferromagnetic pinning layer also can or mix antiferromagnet for synthetic anti-ferromagnetic; The material of said ferromagnetic nailed layer can be soft magnetic material, like iron cobalt CoFe, cobalt Co, iron Fe, iron nickel Fe or cobalt nickel Co; The material of said non-magnetic separation layer can be non-magnetic material, like aluminium Al, alundum (Al Al2O3, tantalum Ta, copper Cu or chromium Cr; The material of said soft magnetosphere can be soft magnetic material, like iron cobalt CoFe, cobalt Co, iron Fe, iron nickel Fe or cobalt nickel Co.
The material of said insulation course can be insulating material, like silicon dioxide SiO
2, silicon nitride SiNx or aluminium nitride AlN.
The material of said pixel electrode layer can be transparent conductive material, like tin indium oxide ITO.
The material of said signal electrode layer can be conductive material, like aluminium Al, molybdenum Mo or copper Cu.
With the embodiment of the invention one based on same inventive concept, the present invention provides array base palte preparation method and LCD through embodiment two and embodiment three.
Embodiment two,
The embodiment of the invention two provides a kind of preparation method of array base palte, is illustrated in figure 4 as the flow chart of steps of this method, and this method comprises:
Step 101, formation control electrode layer.
This step comprises: deposition of transparent conductive film on substrate, on said nesa coating, form the control electrode layer pattern, and with said control electrode layer pattern crystallization, and promptly make said control electrode layer pattern crystalization.
More excellent; The material of said nesa coating can be tin indium oxide ITO; Can on the substrate that cleaned, pass through the magnetically controlled sputter method deposition of transparent conductive film,, on said nesa coating, form the control electrode layer pattern through the exposure etching procedure; And through annealing process, with said control electrode layer pattern crystallization.
Step 102, formation giant magnetoresistance layer.
This step comprises: on the substrate that has the control electrode layer pattern, deposit antiferromagnetic pinning layer successively, and ferromagnetic nailed layer, non-magnetic separation layer and soft magnetosphere, and form the giant magnetoresistance layer pattern.
More excellent, can deposit antiferromagnetic pinning layer through magnetically controlled sputter method, ferromagnetic nailed layer, non-magnetic separation layer and soft magnetosphere.After deposition was accomplished, the etching procedure that makes public formed the giant magnetoresistance layer pattern.Because the control electrode layer is crystallization, giant magnetoresistance layer etching liquid can not etch into the control electrode layer.
Step 103, formation insulation course.
This step comprises: depositing insulating layer on the substrate that has control electrode layer pattern and giant magnetoresistance layer pattern to each pixel region, forms two via holes on said insulation course.
More excellent, can pass through plasma chemical vapor deposition process, come depositing insulating layer, to each pixel region,, on said insulation course, form two via holes through the exposure etching procedure.
Step 104, formation pixel electrode layer.
This step comprises: having control electrode layer pattern, giant magnetoresistance layer pattern, having on the substrate of insulation course of via hole and continue deposition of transparent conductive film; On said nesa coating, form the pixel electrode layer pattern; To each pixel region; Pixel electrode layer links to each other with the giant magnetoresistance layer through a via hole on the insulation course, and with said pixel electrode layer pattern crystallization.
More excellent, said electrically conducting transparent membrane material is to be tin indium oxide ITO, through the exposure etching procedure, forms the pixel electrode layer pattern, through annealing process, with said pixel electrode layer pattern crystallization.
Step 105, formation signal electrode layer.
This step comprises: deposition signal electrode layer on the substrate that has control electrode layer pattern, giant magnetoresistance layer pattern, the insulation course with via hole, pixel electrode layer pattern; And formation signal electrode; To each pixel region, the signal electrode layer links to each other with the giant magnetoresistance layer through another via hole on the insulation course.
More excellent, through the exposure etching procedure, form signal electrode.Because pixel electrode layer is crystallization, thereby the etching liquid of signal electrode layer can not have influence on pixel electrode layer.
After accomplishing above-mentioned process 101～step 105, the unit of array base palte (Cell) section is identical with prior art with the preparation method of module (Module) section, repeats no more at this.
The array base palte of preparation can be regarded as the array base palte that the embodiment of the invention one provides in the present embodiment two; Therefore repeat no more in the present embodiment two composition material of each layer of array base palte, the composition material of each layer that the composition material of each layer and the array base palte that embodiment one provides are corresponding is identical.
According to the embodiment of the invention one and the array base palte that embodiment two provides, not only can significantly improve charging rate and Ion characteristic, and can not receive illumination effect basically, can improve aperture opening ratio, reduce power consumption.Simultaneously, also have characteristics simple for production, and compatible with existing TFT-LCD manufacture craft on the part manufacture craft.
Embodiment three,
The embodiment of the invention three also provides a kind of LCD that comprises the array base palte that the embodiment of the invention one provides.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. an array base palte is characterized in that, this array base palte comprises substrate;
By near substrate to direction away from substrate; On substrate, be disposed with control electrode layer, giant magnetoresistance layer, insulation course, pixel electrode layer and signal electrode layer; Wherein, control electrode layer, giant magnetoresistance layer and insulation course constitute the giant magnetoresistance active matrix jointly;
To each pixel region, the signal electrode layer links to each other with the giant magnetoresistance layer, and pixel electrode layer links to each other with the giant magnetoresistance layer;
Said giant magnetoresistance layer comprises by the antiferromagnetic pinning layer that sets gradually to the direction away from substrate near substrate, ferromagnetic nailed layer, non-magnetic separation layer and soft magnetosphere; Between antiferromagnetic pinning layer and the ferromagnetic nailed layer is antiferromagnetic coupling, is the ferromagnetism coupling between ferromagnetic nailed layer and the soft magnetosphere.
2. array base palte as claimed in claim 1 is characterized in that, the material of said control electrode layer is a tin indium oxide.
3. array base palte as claimed in claim 1 is characterized in that, the material of said antiferromagnetic pinning layer is manganese iridium, manganese nickel, nickel oxide or manganese iron.
4. array base palte as claimed in claim 1 is characterized in that, the material of said ferromagnetic nailed layer is iron cobalt, cobalt, iron, iron nickel or cobalt nickel.
5. array base palte as claimed in claim 1 is characterized in that, the material of said non-magnetic separation layer is aluminium, alundum (Al, tantalum, copper or chromium.
6. array base palte as claimed in claim 1 is characterized in that, the material of said soft magnetosphere is iron cobalt, cobalt, iron, iron nickel or cobalt nickel.
7. array base palte as claimed in claim 1 is characterized in that, said insulation course is provided with two via holes, and said signal electrode layer links to each other with the giant magnetoresistance layer through a via hole, and said pixel electrode layer links to each other with the giant magnetoresistance layer through another via hole.
8. a LCD is characterized in that, this LCD comprises one like the arbitrary described array base palte of claim 1～6.
9. the preparation method of an array base palte is characterized in that, this method comprises:
Deposition of transparent conductive film on substrate forms the control electrode layer pattern on said nesa coating, and with said control electrode layer pattern crystallization;
On the substrate that has the control electrode layer pattern, deposit antiferromagnetic pinning layer, ferromagnetic nailed layer, non-magnetic separation layer and soft magnetosphere successively, and form the giant magnetoresistance layer pattern;
Depositing insulating layer on the substrate that has control electrode layer pattern and giant magnetoresistance layer pattern to each pixel region, forms two via holes on said insulation course;
Having control electrode layer pattern, giant magnetoresistance layer pattern, having on the substrate of insulation course of via hole and continue deposition of transparent conductive film; On said nesa coating, form the pixel electrode layer pattern; To each pixel region; Pixel electrode layer links to each other with the giant magnetoresistance layer through a via hole on the insulation course, and with said pixel electrode layer pattern crystallization;
Deposition signal electrode layer on the substrate that has control electrode layer pattern, giant magnetoresistance layer pattern, insulation course, pixel electrode layer pattern with via hole; And formation signal electrode; To each pixel region, the signal electrode layer links to each other with the giant magnetoresistance layer through another via hole on the insulation course.
10. method as claimed in claim 9 is characterized in that, said antiferromagnetic pinning layer, ferromagnetic nailed layer, non-magnetic separation layer and the soft magnetosphere of on the substrate that has the control electrode layer pattern, depositing successively specifically comprises:
Through magnetically controlled sputter method, deposit antiferromagnetic pinning layer, ferromagnetic nailed layer, non-magnetic separation layer and soft magnetosphere successively.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210046656.8A CN102645805B (en) | 2012-02-24 | 2012-02-24 | Array base plate, preparation method of array base plate and liquid crystal display |
| PCT/CN2012/087237 WO2013123812A1 (en) | 2012-02-24 | 2012-12-23 | Array substrate, method for preparing same, and display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210046656.8A CN102645805B (en) | 2012-02-24 | 2012-02-24 | Array base plate, preparation method of array base plate and liquid crystal display |
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| CN102645805B CN102645805B (en) | 2014-08-20 |
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|---|---|---|---|---|
| WO2013123812A1 (en) * | 2012-02-24 | 2013-08-29 | 北京京东方光电科技有限公司 | Array substrate, method for preparing same, and display device |
| CN104777691A (en) * | 2015-05-06 | 2015-07-15 | 京东方科技集团股份有限公司 | Display device and manufacturing method thereof |
| CN104777691B (en) * | 2015-05-06 | 2018-01-26 | 京东方科技集团股份有限公司 | Display device and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| WO2013123812A1 (en) | 2013-08-29 |
| CN102645805B (en) | 2014-08-20 |
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