CN215988831U - Magnetic structure and magnetic tunnel junction - Google Patents
Magnetic structure and magnetic tunnel junction Download PDFInfo
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- CN215988831U CN215988831U CN202122366681.1U CN202122366681U CN215988831U CN 215988831 U CN215988831 U CN 215988831U CN 202122366681 U CN202122366681 U CN 202122366681U CN 215988831 U CN215988831 U CN 215988831U
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Abstract
The application provides a magnetic structure and a magnetic tunnel junction. The magnetic structure comprises a fixed layer, a barrier layer, a free layer and a coupling enhancement structure which are sequentially stacked, wherein the coupling enhancement structure comprises a first ferromagnetic layer, a first metal layer and a second ferromagnetic layer which are sequentially stacked along the direction far away from the free layer. Therefore, the magnetic structure increases the volume of the magnetic layer by adding the coupling enhancement structure with the first ferromagnetic layer, the first metal layer and the second ferromagnetic layer, and simultaneously increases the perpendicular magnetic anisotropy by the interface coupling between the first ferromagnetic layer and the second ferromagnetic layer and the first metal layer respectively, thereby improving the thermal stability factor, and further solving the problem that the thermal stability factor is difficult to be greatly improved by adjusting the thickness of the free layer in the prior art.
Description
Technical Field
The application relates to the field of magnetic tunnel junctions, in particular to a magnetic structure and a magnetic tunnel junction.
Background
Magnetic Random Access Memory (MRAM) is constructed from an array of Magnetic Tunnel Junctions (MTJs) whose core structure includes a free layer, a barrier layer, and a fixed layer. The free layer and the fixed layer are magnetic layers, and the barrier layer is a very thin insulating layer. The magnetization direction of the MTJ fixed layer is unchanged and the magnetization direction of the free layer can be changed by an applied magnetic field or an input current. The resistance value of the MTJ is controlled by the relative magnetization directions of the free and fixed layers, which is one of the physical principles of operation of the MTJ device.
Spin transfer torque MRAM (STT-MRAM) is a memory that changes the state of MTJ by using current, and has the greatest advantage of non-volatility (no loss of power-off data) over a conventional memory such as DRAM, in addition to the advantages of simple circuit design, fast read/write speed, unlimited erasure and the like. One core indicator of MRAM as a non-volatile memory is data retention time, which depends on the barrier height between the two states in the MTJ. As semiconductor structure processing technology advances, MTJ devices continue to shrink in size, with the ultimate goal being that the size be below 10 nm. When the size is reduced, the thermal stability factor is significantly reduced (Δ ═ H) due to the reduced volume of the magnetic layerkMsV/2kBT), the data retention capability hardly meets the expected requirements. Thickening the free layer increases the volume V, but the magnetic anisotropy field HkThe thermal stability factor is reduced, and the final thermal stability factor is difficult to be greatly improved.
Therefore, the thermal stability factor is difficult to be greatly improved by adjusting the thickness of the free layer in the prior art.
The above information disclosed in this background section is only for enhancement of understanding of the background of the technology described herein and, therefore, certain information may be included in the background that does not form the prior art that is already known in this country to a person of ordinary skill in the art.
SUMMERY OF THE UTILITY MODEL
The application mainly aims to provide a magnetic structure and a magnetic tunnel junction so as to solve the problem that the thermal stability factor is difficult to greatly improve by adjusting the thickness of a free layer in the prior art.
According to an aspect of an embodiment of the present invention, there is provided a magnetic structure including a fixed layer, a barrier layer, a free layer, and a coupling enhancement structure sequentially stacked, the coupling enhancement structure including a first ferromagnetic layer, a first metal layer, and a second ferromagnetic layer sequentially stacked in a direction away from the free layer.
Optionally, the magnetic structure further comprises: a metal oxide layer between the free layer and the coupling enhancement structure.
Optionally, the coupling enhancement structure further comprises: a second metal layer on a surface of the second ferromagnetic layer distal from the first metal layer.
Optionally, the second metal layer comprises an Ir layer.
Optionally, the coupling enhancement structure further comprises: an oxide layer on a surface of the second ferromagnetic layer distal from the first metal layer.
Optionally, the first and second ferromagnetic layers each comprise at least one of a Co layer, an Fe layer, a CoB layer, a FeB layer, and a CoFeB layer.
Optionally, the first ferromagnetic layer and the second ferromagnetic layer each have a thickness of 0.4-1.2 nm.
Optionally, the first metal layer comprises an Ir layer.
Optionally, the thickness of the first metal layer is 0.5-2.5 nm.
According to another aspect of the embodiments of the present invention, there is provided a magnetic tunnel junction including a bottom electrode, a magnetic structure, and a top electrode stacked in this order, wherein the magnetic structure is any one of the magnetic structures.
In an embodiment of the present invention, a magnetic structure includes a fixed layer, a barrier layer, a free layer, and a coupling enhancement structure sequentially stacked, the coupling enhancement structure including a first ferromagnetic layer, a first metal layer, and a second ferromagnetic layer sequentially stacked in a direction away from the free layer. Therefore, the magnetic structure increases the volume of the magnetic layer by adding the coupling enhancement structure with the first ferromagnetic layer, the first metal layer and the second ferromagnetic layer, and simultaneously increases the perpendicular magnetic anisotropy by the interface coupling between the first ferromagnetic layer and the second ferromagnetic layer and the first metal layer respectively, thereby improving the thermal stability factor, and further solving the problem that the thermal stability factor is difficult to be greatly improved by adjusting the thickness of the free layer in the prior art.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the application and, together with the description, serve to explain the application and are not intended to limit the application. In the drawings:
FIG. 1 shows a schematic diagram of a magnetic structure according to an embodiment of the present application;
FIG. 2 shows a schematic diagram of a magnetic structure according to an embodiment of the present application;
FIG. 3 shows a schematic diagram of a magnetic structure according to an embodiment of the present application;
fig. 4 shows a schematic diagram of a magnetic structure according to an embodiment of the present application.
Wherein the figures include the following reference numerals:
10. a fixed layer; 11. a barrier layer; 12. a free layer; 13. a coupling enhancement structure; 14. a first ferromagnetic layer; 15. a first metal layer; 16. a second ferromagnetic layer; 17. a metal oxide layer; 18. a second metal layer; 19. an oxide layer.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the data so used may be interchanged under appropriate circumstances such that embodiments of the application described herein may be used. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. Also, in the specification and claims, when an element is described as being "connected" to another element, the element may be "directly connected" to the other element or "connected" to the other element through a third element.
As described in the background art, it is difficult to greatly increase the thermal stability factor by adjusting the thickness of the free layer in the prior art, and in order to solve the above problems, the present application provides a magnetic structure and a magnetic tunnel junction.
According to an embodiment of the present application, a magnetic structure is provided. Fig. 1 is a schematic diagram of a magnetic structure according to an embodiment of the present application, as shown in fig. 1, including a fixed layer 10, a barrier layer 11, a free layer 12, and a coupling enhancement structure 13 stacked in this order, the coupling enhancement structure 13 including a first ferromagnetic layer 14, a first metal layer 15, and a second ferromagnetic layer 16 stacked in this order in a direction away from the free layer 12.
The magnetic structure described above includes the fixed layer 10, the barrier layer 11, the free layer 12, and the coupling enhancement structure 13 stacked in this order, and the coupling enhancement structure 13 includes the first ferromagnetic layer 14, the first metal layer 15, and the second ferromagnetic layer 16 stacked in this order in a direction away from the free layer 12. Therefore, the magnetic structure increases the volume of the magnetic layer by adding the coupling enhancement structure with the first ferromagnetic layer, the first metal layer and the second ferromagnetic layer, and simultaneously increases the perpendicular magnetic anisotropy by the interface coupling between the first ferromagnetic layer and the second ferromagnetic layer and the first metal layer respectively, thereby improving the thermal stability factor, and further solving the problem that the thermal stability factor is difficult to be greatly improved by adjusting the thickness of the free layer in the prior art.
In one embodiment of the present application, the pinned layer further includes a seed layer, an antiferromagnetic coupling layer, and a reference layer.
The seed crystal layer may be made of one or more of Pt, Ru, Pt alloy and Ru alloy, or may be made of several alloys. Those skilled in the art can select suitable materials to form the seed layer according to practical situations.
The anti-ferromagnetic coupling layer comprises a first magnetic layer, a spacing layer and a second magnetic layer which are sequentially stacked from bottom to top, the first magnetic layer and the second magnetic layer are anti-ferromagnetically coupled through the spacing layer, and the spacing layer is at least one of Ir and Ru. The first magnetic layer and the second magnetic layer are made of at least one material independently selected from the group consisting of Fe, Co, Ni, CoFe, NiFe, and CoFeB. That is, the material of the first magnetic layer may be Fe, Co, Ni, CoFe, NiFe, or CoFeB, or a combination of any of Fe, Co, Ni, CoFe, NiFe, and CoFeB; that is, the material of the second magnetic layer may be Fe, Co, Ni, CoFe, NiFe, or CoFeB, or a combination of any of Fe, Co, Ni, CoFe, NiFe, and CoFeB. The materials of the first magnetic layer and the second magnetic layer may be the same or different, and those skilled in the art may set the materials of the two layers to be the same or different according to actual circumstances.
The reference layer is made of one or more materials selected from Co, Ni, Fe, CoFe, CoNi, NiFe, CoFeNi, CoB, FeB, CoFeB and FePt. The metal alloy may be a single metal or an alloy of several metals. Those skilled in the art can select suitable materials to form the reference layer of the present application according to practical situations.
The barrier layer of the present application is made of a material selected from one or more of magnesium oxide, silicon nitride, aluminum oxide, magnesium aluminum oxide, titanium oxide layer, tantalum oxide, calcium oxide, and ferrite. The compound may be a single compound or a mixture of several compounds. Those skilled in the art can select suitable materials to form the insulating barrier layer of the present application according to practical situations.
The material of the free layer is selected from one or more of Co, Fe, NiCoB, FeB, NiB, CoFe, NiFe, CoNi, CoFeNi, CoFeB, NiFeB, CoNiB and CoFeNiB. The metal alloy may be a single metal or an alloy of several metals. Those skilled in the art can select suitable materials to form the free layer of the present application according to practical situations.
In one embodiment of the present application, as shown in fig. 2, the magnetic structure further includes a metal oxide layer 17, and the metal oxide layer 17 is located between the free layer 12 and the coupling enhancement structure 13. In this embodiment, a metal oxide layer is added between the free layer and the coupling enhancement structure, and the orbital hybridization at the interface of the metal oxide layer and the coupling enhancement structure can provide additional perpendicular magnetic anisotropy, thereby further improving the data retention capability of the magnetic tunnel junction.
In yet another embodiment of the present application, as shown in fig. 3, the coupling enhancement structure 13 further includes a second metal layer 18, and the second metal layer 18 is located on a surface of the second ferromagnetic layer 16 away from the first metal layer 15. In this embodiment, the second metal layer is added on the surface of the second ferromagnetic layer away from the first metal layer, and the interface coupling exists between the second metal layer and the second ferromagnetic layer, so that the perpendicular magnetic anisotropy of the magnetic structure is further improved, and the thermal stability factor is further improved.
In another embodiment of the present application, the second metal layer includes an Ir layer. Of course, the material of the second metal layer in the present application is not limited to Ir, and other materials, such as Ir alloy, may be adopted, and those skilled in the art may select the material according to the actual situation.
In yet another embodiment of the present application, as shown in fig. 4, the coupling enhancement structure 13 further includes an oxide layer 19, and the oxide layer 19 is located on a surface of the second ferromagnetic layer 16 away from the first metal layer 15. In this embodiment, an oxide layer is added on the surface of the second ferromagnetic layer far from the first metal layer, and the orbital hybridization at the interface formed by the oxide layer and the second ferromagnetic layer can provide additional perpendicular magnetic anisotropy, thereby further improving the data retention capability of the magnetic tunnel junction.
In yet another embodiment of the present application, the first ferromagnetic layer and the second ferromagnetic layer each include at least one of a Co layer, an Fe layer, a CoB layer, a FeB layer, and a CoFeB layer. In practical applications, the first ferromagnetic layer and the second ferromagnetic layer are not limited to one of a Co layer, an Fe layer, a CoB layer, a FeB layer, and a CoFeB layer, and a multilayer structure in which several material layers are combined may be used.
In order to further improve the data retention capability of the magnetic tunnel junction, in another embodiment of the present application, the thicknesses of the first ferromagnetic layer and the second ferromagnetic layer are 0.4 to 1.2nm, respectively.
In yet another embodiment of the present application, the first metal layer includes an Ir layer. Of course, the material of the first metal layer in the present application is not limited to Ir, and other materials, such as Ir alloy, may be adopted, and those skilled in the art may select the material according to the actual situation.
In yet another embodiment of the present invention, the thickness of the first metal layer is 0.5 to 2.5 nm. In this embodiment, the first metal layer is selected within this thickness range, and the perpendicular magnetic anisotropy is most effectively enhanced, thereby further enhancing the thermal stability factor.
The embodiment of the application also provides a magnetic tunnel junction, which comprises a bottom electrode, a magnetic structure and a top electrode which are sequentially stacked, wherein the magnetic structure is any one of the magnetic structures.
The magnetic tunnel junction comprises a bottom electrode, a magnetic structure and a top electrode which are sequentially stacked, wherein the magnetic structure comprises a fixed layer, a barrier layer, a free layer and a coupling enhancement structure which are sequentially stacked, and the coupling enhancement structure comprises a first ferromagnetic layer, a first metal layer and a second ferromagnetic layer which are sequentially stacked along the direction far away from the free layer. Therefore, the magnetic structure increases the volume of the magnetic layer by adding the coupling enhancement structure with the first ferromagnetic layer, the first metal layer and the second ferromagnetic layer, and simultaneously increases the perpendicular magnetic anisotropy by the interface coupling between the first ferromagnetic layer and the second ferromagnetic layer and the first metal layer respectively, thereby improving the thermal stability factor, and further solving the problem that the thermal stability factor is difficult to be greatly improved by adjusting the thickness of the free layer in the prior art. Therefore, the magnetic tunnel junction adopts the magnetic structure, and the thermal stability factor of the magnetic tunnel junction is high, so that the data retention capability of the magnetic tunnel junction is good.
In a specific embodiment of the present application, the top electrode and the bottom electrode have a multilayer structure and are at least one of Ta, Ru, Pt, W, and Mo.
The method for disposing each layer in the present application may be any method in the prior art, such as magnetron sputtering, physical vapor deposition or molecular beam epitaxy deposition, and one skilled in the art may select a suitable method to dispose each film layer according to actual conditions.
In order to make the technical solutions of the present application more clearly understood by those skilled in the art, the technical solutions and technical effects of the present application will be described below with reference to specific embodiments.
Examples
Example 1
The magnetic tunnel junction of this embodiment includes a bottom electrode, a fixed layer, a barrier layer, a free layer, a capping layer, a first ferromagnetic layer, a first metal layer, and a second ferromagnetic layer. Wherein the bottom electrode is Ta; the fixed layer comprises a seed layer, a pinning layer, an antiferromagnetic coupling layer and a reference layer, wherein the seed layer is Pt, and the pinning layer is [ Co/Pt ]]6The multilayer film has an antiferromagnetic coupling layer of Ru and a reference layer of [ Co/Pt ]]2a/Ta/CoFeB multilayer film; the barrier layer is MgO; the free layer is a CoFeB/Ta/CoFeB multilayer film; the covering layer is MgO; the first ferromagnetic layer is made of CoB, the first metal layer is an alloy film containing Ir, the second ferromagnetic layer is CoFeB, and the top electrode is Ta.
Example 2
Compared with embodiment 1, the second metal layer is added between the second ferromagnetic layer and the top electrode, and the perpendicular magnetic anisotropy of the system is further improved and the thermal stability factor is higher due to the interface coupling between the second metal layer and the second ferromagnetic layer.
Example 3
Compared with the embodiment 2, the second metal layer is replaced by the oxide layer, the material of the oxide layer is magnesium oxide, and the magnesium oxide and the second ferromagnetic layer have orbital hybridization at the interface, so that additional perpendicular magnetic anisotropy can be provided, and the purpose of enhancing the thermal stability factor of the system can be achieved.
From the above description, it can be seen that the above-described embodiments of the present application achieve the following technical effects:
1) the magnetic structure comprises a fixed layer, a barrier layer, a free layer and a coupling enhancement structure which are sequentially stacked, wherein the coupling enhancement structure comprises a first ferromagnetic layer, a first metal layer and a second ferromagnetic layer which are sequentially stacked along the direction far away from the free layer. Therefore, the magnetic structure increases the volume of the magnetic layer by adding the coupling enhancement structure with the first ferromagnetic layer, the first metal layer and the second ferromagnetic layer, and simultaneously increases the perpendicular magnetic anisotropy by the interface coupling between the first ferromagnetic layer and the second ferromagnetic layer and the first metal layer respectively, thereby improving the thermal stability factor, and further solving the problem that the thermal stability factor is difficult to be greatly improved by adjusting the free thickness in the prior art.
2) The magnetic tunnel junction comprises a bottom electrode, a magnetic structure and a top electrode which are sequentially stacked, wherein the magnetic structure comprises a fixed layer, a barrier layer, a free layer and a coupling enhancement structure which are sequentially stacked, and the coupling enhancement structure comprises a first ferromagnetic layer, a first metal layer and a second ferromagnetic layer which are sequentially stacked along the direction of keeping away from the free layer. Therefore, the magnetic structure increases the volume of the magnetic layer by adding the coupling enhancement structure with the first ferromagnetic layer, the first metal layer and the second ferromagnetic layer, and simultaneously increases the perpendicular magnetic anisotropy by the interface coupling between the first ferromagnetic layer and the second ferromagnetic layer and the first metal layer respectively, thereby improving the thermal stability factor, and further solving the problem that the thermal stability factor is difficult to be greatly improved by adjusting the thickness of the free layer in the prior art. Therefore, the magnetic tunnel junction adopts the magnetic structure, and the thermal stability factor of the magnetic tunnel junction is high, so that the data retention capability of the magnetic tunnel junction is good.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A magnetic structure comprising a fixed layer, a barrier layer, a free layer, and a coupling enhancement structure stacked in that order, the coupling enhancement structure comprising a first ferromagnetic layer, a first metal layer, and a second ferromagnetic layer stacked in that order in a direction away from the free layer.
2. The magnetic structure of claim 1, further comprising:
a metal oxide layer between the free layer and the coupling enhancement structure.
3. The magnetic structure of claim 1, wherein the coupling enhancement structure further comprises:
a second metal layer on a surface of the second ferromagnetic layer distal from the first metal layer.
4. The magnetic structure of claim 3, wherein the second metal layer comprises an Ir layer.
5. The magnetic structure of claim 1, wherein the coupling enhancement structure further comprises:
an oxide layer on a surface of the second ferromagnetic layer distal from the first metal layer.
6. The magnetic structure of any one of claims 1 to 5, wherein the first and second ferromagnetic layers each comprise at least one of a Co layer, an Fe layer, a CoB layer, a FeB layer, and a CoFeB layer.
7. The magnetic structure of any one of claims 1 to 5, wherein the first ferromagnetic layer and the second ferromagnetic layer each have a thickness of 0.4 to 1.2 nm.
8. The magnetic structure of any one of claims 1 to 5, wherein the first metal layer comprises an Ir layer.
9. The magnetic structure according to any of claims 1 to 5, wherein the thickness of the first metal layer is 0.5 to 2.5 nm.
10. A magnetic tunnel junction comprising a bottom electrode, a magnetic structure and a top electrode stacked in sequence, wherein the magnetic structure is as claimed in any one of claims 1 to 9.
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| CN202122366681.1U CN215988831U (en) | 2021-09-28 | 2021-09-28 | Magnetic structure and magnetic tunnel junction |
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| CN202122366681.1U CN215988831U (en) | 2021-09-28 | 2021-09-28 | Magnetic structure and magnetic tunnel junction |
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