CN110085717A - A kind of spinning LED based on heavy metals regulation spin injection end - Google Patents
A kind of spinning LED based on heavy metals regulation spin injection end Download PDFInfo
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- CN110085717A CN110085717A CN201910294416.1A CN201910294416A CN110085717A CN 110085717 A CN110085717 A CN 110085717A CN 201910294416 A CN201910294416 A CN 201910294416A CN 110085717 A CN110085717 A CN 110085717A
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- 238000002347 injection Methods 0.000 title claims abstract description 33
- 239000007924 injection Substances 0.000 title claims abstract description 33
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- 238000009987 spinning Methods 0.000 title claims abstract description 23
- 230000005291 magnetic effect Effects 0.000 claims abstract description 33
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 32
- 229910019236 CoFeB Inorganic materials 0.000 claims description 12
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 6
- 229910018516 Al—O Inorganic materials 0.000 claims description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 5
- 229910018885 Pt—Au Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910000748 Gd alloy Inorganic materials 0.000 claims description 2
- 229910018883 Pt—Cu Inorganic materials 0.000 claims description 2
- 229910001117 Tb alloy Inorganic materials 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
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- 238000004544 sputter deposition Methods 0.000 description 24
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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Abstract
The present invention relates to a kind of spinning LEDs based on heavy metals regulation spin injection end, including substrate, LED component layer, barrier layer, ferromagnetic material layers and the heavy metal layer stacked gradually.The present invention is controllably overturn using heavy metal layer, ferromagnetic material layers and barrier layer as spin injection end by applying magnetosphere vertical magnetic moment in the injection end that reliably spins and electric current is realized quickly using spin(-)orbit torque effect in heavy metal layer.Regulate and control magnetic moment using electric current and then completes the regulation of the spin state to injection electronics, realize the luminous polarized state modulation effect of spinning LED, it overcomes the prior art and causes spinning electron component to have the defects that energy consumption is high, volume is big, heat is high etc. using magnetic field regulation electronics, realize the spinning LED based on spin(-)orbit torque.
Description
Technical field
The invention belongs to area of Spintronics, and in particular to a kind of spin hair based on heavy metals regulation spin injection end
Optical diode.
Background technique
Spintronics is one of important subject emerging in Condensed Matter Physics, it is main study electronics in solid material from
Rotation injection, spin regulation, spin transport and spin detection related physical effect, are spinned by regulation and manipulation, realize data
Storage, logical operation, quantum calculation etc..In the past 20 years, the letter based on high density magnetic storage and super large-scale integration
The rapid development of breath industry brings the mankind into the global IT application epoch.
In the competition of new round high-tech, related spintronics research mainly has spin fet, spin hair
Optical diode (Spin-LED), spin resonance tunneling device, the photoswitch of Terahertz frequency range and quantum computer and quantum are logical
Quantum bit etc. in news.Spinning LED technology is a kind of important semiconductor spin electronics device in these researchs
Part, because its by electron spin information coding at circularly polarized light, powerful potential application is shown in advanced semiconductor technology,
Such as the optical transport of information, quantum cryptography etc., therefore the emerging of people has been played to the research of spin-correlation effect based on Spin-LED
Interest.The nuclear structure of Spin-LED is made of the active region of spin injection end and electron-hole recombinations.The electronics of spin polarization or
Hole is injected into active region and hole or compound left-handed or dextrorotation the circularly polarized light of generation of electronics by the injection end that spins, and passes through
The polarizability of light can directly reflect the polarizability in injected electrons or hole.However at present people for spin regulation,
It is more by magnetic field, this makes spinning electron component there is the disadvantages of energy consumption is high, volume is big, heat is high, is regulated and controled with magnetic field
Spin direction is also easy to influence the spin of adjacent area, increases system fault rate.Therefore the perpendicular magnetic of regulation spin injection end
Anisotropy magnetic moment and then progress electron spin injection, need to assist using biggish magnetic field, so that Spin-LED is upper in application
It is not easy enough.Therefore, how under zero magnetic field and significantly more efficient mode come regulate and control electron spin become exploitation a new generation
One of challenge of Spin-LED.
As physics is in the research of area of Spintronics, spin(-)orbit torque (Spin Orbit Torque, SOT)
Hot spot as the area research.It is mainly flowed through on heavy metal layer using electric current, due to heavy metal layer have it is stronger from
Revolve orbit coupling and higher charge-Spin transition efficiency, the non-equilibrium spin current of charge-Spin transition mechanism accumulation and
It generates spin transfer torque to have an effect with the vertical magnetic moment in ferromagnetic material layers, so that the magnetic moment of ferromagnetic material layers turns over
Turn.To can realize electric current driving spin injection end Magnetic moment reversal, reach without external magnetic field come regulate and control injection electronics from
State is revolved to realize the luminous polarized state of regulation spinning LED.To realize have low energy consumption, structure it is easy from
Revolve light emitting diode.
Summary of the invention
For the problems of the prior art, the present invention provides a kind of spin hairs based on heavy metals regulation spin injection end
Optical diode can effectively regulate and control the spin injection of electrically realized electronics using electric current.
The present invention is achieved by the following technical scheme: a kind of spin based on heavy metals regulation spin injection end shines
Diode is made of substrate, LED component layer, barrier layer, ferromagnetic material layers and the heavy metal layer stacked gradually.
In the above-mentioned technical solutions, the bottom is GaAs, Si, SiO2One of/Si, mica, quartz or sapphire.
Further, the substrate GaAs.
In the above-mentioned technical solutions, the LED component layer is by the buffer area p-type GaAs, GaAs layers of p-type or the P that stack gradually
AlGaAs layers of AlGaAs layers of type, GaAs layers of I type or I type, I type InGaAs quantum well layer, GaAs layers of I type and GaAs layers of N-type composition.
In the above-mentioned technical solutions, the barrier layer is MgO or Al-O, with a thickness of 1-3nm.
In the above-mentioned technical solutions, the ferromagnetic material layers are CoFeB alloy, [Co- with perpendicular magnetic anisotropic
Ni] multilayer film, Co-Tb alloy or Co-Gd alloy, with a thickness of 0.8-3nm.
Further, the ferromagnetic material layers are CoFeB alloy or [Co-Ni] multilayer film.
In the above-mentioned technical solutions, the heavy metal layer is Pt, Ta, Mo, Pt-Au, Pt-Cu or Ta-Au, with a thickness of 1-
10nm。
The present invention also provides a kind of preparations of above-mentioned spinning LED based on heavy metals regulation spin injection end
Method, specifically includes the following steps:
S1, LED component floor is successively grown by molecular beam epitaxy on substrate: in ultravacuum room, first in Ar atmosphere
Lower heating substrate removes some impurity on its surface, and each layer in growth LED component layer then is laminated by molecular beam epitaxy,
The speed of growth is
S2, barrier layer is grown on LED component layer prepared by S1 by magnetron sputtering method, in growth course, magnetron sputtering
Main chamber air pressure reaches 5 × 10-7It after torr, can be sputtered, sputtering power is 120W when sputtering, and growth temperature is room temperature.
S3, ferromagnetic material layers are grown on barrier layer prepared by S2 by magnetron sputtering method, in growth course, vacuum degree is
8×10-5Pa, sputtering pressure are 5 × 10-3Torr, sputtering power 120W.
S4, heavy metal layer is grown on ferromagnetic material layers prepared by S3 by magnetron sputtering method, sputtering pressure is 5 × 10- 3Torr, sputtering power 30W.
The invention has the benefit that electric current driving spin injection end of the present invention using spin(-)orbit torque effect, with
Heavy metal, ferromagnetic material layers and barrier layer are as spin injection end, since there are logic gates in heavy metal, when in a huge sum of money
When the spin current application torque that Quantum geometrical phase in category generates acts on adjacent ferromagnetic layer, due to the spin in heavy metal
Orbit coupling effect and logic gates, the spin current of vertical direction, spin current can be generated by flowing the electric current in heavy metal
The spin at interface is caused to gather, the spin of accumulation generates the effect of torque to adjacent ferromagnetic layer.When current density reaches certain
When value, the direction of magnetization in ferromagnetic layer is inverted.In Spin-LED, the electron injection active region of spin polarization, with hole
Radiation recombination, preferential emission dextrorotation or left circularly polarized light occurs.Apply electric current using in heavy metal layer to regulate and control ferromagnetic layer
In this technology of the direction of magnetization relative to it is traditional using magnetic field control the magnetic material direction of magnetization method, it is more efficient,
Locality is stronger.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of Spin-LED of the present invention；
Fig. 2 is flipped up the schematic diagram of state for the magnetic moment direction in ferromagnetic material layers；
Fig. 3 downwardly turns over the schematic diagram of state for the magnetic moment direction in ferromagnetic material layers.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and examples, but not limited to this.
Embodiment 1
A kind of spinning LED is present embodiments provided, as shown in Figure 1, sequentially consisting of: p-type GaAs substrate
1, the buffer area p-type GaAs 2, p-type GaAs layer 3, I type GaAs layer 4, I type InGaAs quantum well layer 5, I type GaAs layer 6, N-type GaAs
Layer 7, MgO layer 8, CoFeB alloy-layer 8, Pt layer 10.
Wherein, Pt layers with a thickness of 5nm, CoFeB layer with a thickness of 0.8nm, MgO layer is with a thickness of 2nm.
Preparation method specifically:
(1) some impurity that first heating substrate removes its surface under an ar atmosphere pass through molecule then in ultravacuum environment
Each layer in beam epitaxy (MBE) method stacking growth LED component layer, the speed of growth are
(2) sample is transferred to magnetron sputtering, clears up LED surface by In Situ Heating, then grows on LED structure layer
MgO barrier, in growth course, magnetron sputtering main chamber air pressure reaches 5 × 10-7It after torr, can be sputtered, when sputtering sputters function
Rate is 120W, and growth temperature is room temperature.
(3) magnetic metal CoFeB layer is grown on having grown MgO barrier by magnetically controlled sputter method, wherein vacuum degree
It is 8 × 10-5Pa, sputtering pressure are 5 × 10-3Torr, sputtering power 120W.
(4) Pt floor is grown on ferromagnetic material layers CoFeB by magnetron sputtering method in ultravacuum room, wherein sputtering
Air pressure is 5 × 10-3Torr, sputtering power 30W.
Embodiment 2
A kind of spinning LED is present embodiments provided, as shown in Figure 1, sequentially consisting of: p-type GaAs substrate
1, the buffer area p-type GaAs 2, p-type GaAs layer 3, I type GaAs layer 4, I type InGaAs quantum well layer 5, I type GaAs layer 6 and N-type GaAs
Layer 7, MgO layer 8, CoFeB alloy-layer 9, Ta layer 10.
Wherein, Ta layers with a thickness of 1nm, CoFeB layer with a thickness of 0.8nm, MgO layer with a thickness of 2.5nm.
Preparation method specifically:
(1) some impurity that first heating substrate removes its surface under an ar atmosphere pass through molecule then in ultravacuum environment
Each layer in beam epitaxy (MBE) method stacking growth LED component layer, the speed of growth are
(2) MgO barrier is grown on LED structure layer using the method for magnetron sputtering, in growth course, magnetron sputtering master
Chamber air pressure reaches 5 × 10-7It after torr, can be sputtered, sputtering power is 25W when sputtering, and growth temperature is room temperature.
(3) magnetic metal CoFeB layer is grown on having grown MgO barrier by magnetically controlled sputter method, wherein vacuum degree
It is 8 × 10-5Pa, sputtering pressure are 5 × 10-3Torr, sputtering power 120W.
(4) heavy metal layer Ta is grown on having grown CoFeB magnetic metallic layers using magnetron sputtering method, sputtering power is
30W, sputtering pressure are 5 × 10-3torr。
The specific regulation luminescent method of spinning LED prepared by embodiment 1 and embodiment 2 are as follows: with heavy metal Ta
Or Pt and ferrimagnet CoFeB gives the electric current of a forward direction (or reversed) on heavy metal, utilizes as spin injection end
The conversion of electric current-spin current, the electricity of spin downwards (or upwards) may be implemented in Quantum geometrical phase effect in heavy metal material
Son is had an effect with the vertical magnetic moment in lower layer's ferromagnetic layer, that is, right using the spin(-)orbit torque (SOT) of heavy metal material
The magnetic moment of lower layer's ferromagnetic layer realizes manipulation, and the controllable of the electric current driving based on spin(-)orbit torque (SOT) effect both may be implemented
Magnetic moment reversal.So that injected electrons is polarized, possesses polarization direction vertically upward or downwards.The electronics being polarized in this way
I type In0.1Ga0.9As Quantum Well is diffused by GaAs layers of N-type and from GaAs layers of p-type of hole-recombination, is jumped according to quantum
Move the polarised light that selection rule issues certain degree of polarization.
Embodiment 3
A kind of spinning LED is present embodiments provided, as shown in Figure 1, sequentially consisting of: GaAs substrate 1, P
The buffer area type GaAs 2, p-type AlGaAs layer 3, I type AlGaAs layer 4, I type InGaAs quantum well layer 5, I type GaAs layer 6, N-type GaAs
7, Al-O of layer layer 8, [Co-Ni] multilayer film 9, Pt-Au layer 10.
Wherein, Pt-Au layers with a thickness of 5nm, [Co-Ni] multilayer film with a thickness of 3nm, Al-O layers with a thickness of 1nm.
Preparation method specifically:
(1) some impurity that first heating substrate removes its surface under an ar atmosphere pass through molecule then in ultravacuum environment
Each layer in beam epitaxy (MBE) method stacking growth LED component layer, the speed of growth are
(2) sample is transferred to magnetron sputtering, clears up LED surface by In Situ Heating, then uses the method for magnetron sputtering
Al-O barrier layer is grown on LED structure layer, in growth course, magnetron sputtering main chamber air pressure reaches 5 × 10-7It, can be into after torr
Row sputtering, and sputtering power is 120W when sputtering, growth temperature is room temperature.
(3) [Co-Ni] multilayer film grow on Al-O barrier layer by magnetically controlled sputter method, wherein vacuum degree for 8 ×
10-5Pa, sputtering pressure are 5 × 10-3Torr, sputtering power 120W.
(4) Pt-Au floor is grown on [Co-Ni] multilayer film by magnetron sputtering method in ultravacuum room, wherein sputtering
Power is 30W, and sputtering pressure is 5 × 10-3torr。
Specific testing procedure is as follows:
Heavy metal layer in Fig. 1 applies electric current in the direction of the arrow to the right, when current density reaches 5 × 107A/cm2When,
Spin current accumulation in heavy metal induces the magnetic moment direction in neighboring ferromagnetic layer to be flipped up, and (magneto-optical kerr test characterizes, black
Color be magnetic moment upward, as shown in Figure 2)；Apply electric current to the left along the direction of the arrow in heavy metal layer, when current density be 5 ×
107A/cm2, the magnetic moment direction of ferromagnetic layer downwardly turns over that (magneto-optical kerr tests table by the induction of the spin current of heavy metal layer
Sign, white be magnetic moment downward, as shown in Figure 3).The above test utilizes charge-by way of applying electric current in heavy metal layer
The spin current of the vertical direction of Spin transition mechanism accumulation generates accumulation and generates spin transfer torque to induce ferromagnetic material
Vertical magnetic moment in layer is flipped.Spin electric device in the present invention is real using the spin(-)orbit torque effect of heavy metal layer
The Magnetic moment reversal of existing electric current driving spin injection end, reach regulated and controled using electric current without externally-applied magnetic field injection electronics from
State is revolved to realize the luminous polarized state effect of regulation spinning LED.
It is corresponding in the magnetic moment of two kinds of spin injection ends of the spin(-)orbit torque effect regulation above by heavy metal layer
The spin state for injecting electronics measures (EL) system using electroluminescent, based on photon is generated during Carrier recombination, for producing
Raw spin polarization light leads to focussed collimated and passes through a quarter slide, monochromator is then entered after linear polarizer, on CCD
It is imaged, the spin state of injection electronics is regulated and controled by electric current and is imitated to regulate and control the luminous polarized state of spinning LED
Fruit realizes two kinds of circular polarization states.
The preferred embodiment of the present invention has been described above in detail, and still, the present invention is not limited thereto.In skill of the invention
, can be with various simple variants of the technical solution of the present invention are made in art conception range, various substitutions, changes and modifications are all can
Can, therefore, the present invention should not be limited to most preferred embodiment and attached drawing disclosure of that.
Claims (7)
1. a kind of spinning LED based on heavy metals regulation spin injection end, which is characterized in that the spin luminous two
Pole pipe is made of substrate, LED component layer, barrier layer, ferromagnetic material layers and the heavy metal layer stacked gradually.
2. a kind of spinning LED based on heavy metals regulation spin injection end according to claim 1, feature
It is, the substrate is GaAs, Si, SiO2One of/Si, mica, quartz or sapphire.
3. a kind of spinning LED based on heavy metals regulation spin injection end according to claim 2, feature
It is, the substrate is GaAs.
4. a kind of spinning LED based on heavy metals regulation spin injection end according to claim 1, feature
It is, the LED structure layer is by AlGaAs layers of the buffer area p-type GaAs, GaAs layers of p-type or the p-type, GaAs layers of the I type that stack gradually
Or AlGaAs layers of I type, I type InGaAs quantum well layer, GaAs layers of I type and GaAs layers of N-type composition.
5. a kind of spinning LED based on heavy metals regulation spin injection end according to claim 1, feature
It is, the barrier layer is MgO or Al-O, with a thickness of 1-3nm.
6. a kind of spinning LED based on heavy metals regulation spin injection end according to claim 1, feature
Be, the ferromagnetic material layers be CoFeB alloy with perpendicular magnetic anisotropic, [Co-Ni] multilayer film, Co-Tb alloy or
Co-Gd alloy, with a thickness of 0.8-3nm.
7. a kind of spinning LED based on heavy metals regulation spin injection end according to claim 1, feature
It is, the heavy metal layer is Pt, Ta, Mo, Pt-Au, Pt-Cu or Ta-Au, with a thickness of 1-10nm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111293217A (en) * | 2019-09-18 | 2020-06-16 | 南京理工大学 | Method for enhancing effective conversion efficiency of charge current-spin current in ferromagnetic/heavy metal film system based on stress |
| CN111816738A (en) * | 2020-09-14 | 2020-10-23 | 深圳第三代半导体研究院 | GaN-based LED light source and preparation method thereof |
| CN115295718A (en) * | 2022-08-16 | 2022-11-04 | 成都信息工程大学 | Current-driven light field regulation and control device and using method thereof |
| WO2023281618A1 (en) * | 2021-07-06 | 2023-01-12 | 日本電信電話株式会社 | Circularly polarized light modulating device |
| CN116178747A (en) * | 2023-04-21 | 2023-05-30 | 季华实验室 | Supermolecular crystal film capable of conducting electron spin forbidden excitation and preparation method thereof |
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| CN109301063A (en) * | 2018-09-27 | 2019-02-01 | 中国科学院微电子研究所 | Spin(-)orbit torque actuated device |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111293217A (en) * | 2019-09-18 | 2020-06-16 | 南京理工大学 | Method for enhancing effective conversion efficiency of charge current-spin current in ferromagnetic/heavy metal film system based on stress |
| CN111816738A (en) * | 2020-09-14 | 2020-10-23 | 深圳第三代半导体研究院 | GaN-based LED light source and preparation method thereof |
| WO2023281618A1 (en) * | 2021-07-06 | 2023-01-12 | 日本電信電話株式会社 | Circularly polarized light modulating device |
| CN115295718A (en) * | 2022-08-16 | 2022-11-04 | 成都信息工程大学 | Current-driven light field regulation and control device and using method thereof |
| CN115295718B (en) * | 2022-08-16 | 2023-06-06 | 成都信息工程大学 | Current-driven light field regulating and controlling device and application method thereof |
| CN116178747A (en) * | 2023-04-21 | 2023-05-30 | 季华实验室 | Supermolecular crystal film capable of conducting electron spin forbidden excitation and preparation method thereof |
| CN116178747B (en) * | 2023-04-21 | 2023-09-05 | 季华实验室 | Supermolecular crystal film capable of conducting electron spin forbidden excitation and preparation method thereof |
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