CN109301063A - Spin(-)orbit torque actuated device - Google Patents
Spin(-)orbit torque actuated device Download PDFInfo
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- CN109301063A CN109301063A CN201811135828.2A CN201811135828A CN109301063A CN 109301063 A CN109301063 A CN 109301063A CN 201811135828 A CN201811135828 A CN 201811135828A CN 109301063 A CN109301063 A CN 109301063A
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- magnetosphere
- orbit torque
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- Mram Or Spin Memory Techniques (AREA)
Abstract
This disclosure relates to a kind of spin(-)orbit torque actuated device, the first magnetosphere, heavy metal layer and the second magnetospheric stacked structure stacked including sequence, wherein first magnetosphere has intra-face anisotropy, and second magnetosphere has perpendicular magnetic anisotropy.
Description
Technical field
This disclosure relates to a kind of magnetic memory devices more particularly to a kind of spin(-)orbit torque actuated device.
Background technique
What magnetic memory and magnetic logical device had determined its storage using the state of its magnet is logical zero or logic
One.The example of magnetic memory be spin-transfer torque (STT) MAGNETIC RANDOM ACCESS MEMORY (MRAM) and spin(-)orbit torque (SOT) with
Machine accesses memory (MRAM).Spin-transfer torque MAGNETIC RANDOM ACCESS MEMORY (STT-MRAM) utilizes the spin current of spin polarization,
The read-write of data storage cell is realized under the action of spin transfer torque.But SST-MRAM is by several limitations.Spin rail
Road torque (Spin-Orbit Torque, SOT) refers to based on Quantum geometrical phase (Spin-Orbit Coupling, SOC), benefit
Spin orbital moment is generated with the spin current that electric charge stream induces, and then achievees the purpose that regulate and control magnetic memory cell.Based on SOT's
The shortcomings that MRAM (SOT-MRAM) overcomes STT-MRAM, especially SOT-MRAM separates read/write path, therefore has ratio
The faster read or write speed of STT-MRAM and lower power consumption.
Fig. 1 is to show the perspective view of the spin(-)orbit torque actuated device with Single Magnetic layer of the prior art.Its
In, it is made of heavy metal layer (HM) 1001 and the magnetosphere (FM) 1002 being laminated thereon a kind of as spin(-)orbit torque actuated
The HM/FM structure of device.Heavy metal layer 1001 is generally made of any one material in platinum (Pt), tantalum (Ta) or tungsten (W), example
Such as, heavy metal layer 1001 is made of platinum (Pt).Magnetosphere 1001 for example can be with magnetization or perpendicular magnetization in quilt cover, it is preferable that such as
Shown in Fig. 1, magnetosphere 1001 is vertically magnetized, that is, is perpendicular magnetic anisotropy.Perpendicular magnetization layer is in spin(-)orbit torque device
In be preferably as corresponding device is energy efficient and can bi-directional scaling.Wherein, when the connection in heavy metal layer
When current density reaches reverse current density, the direction of magnetization in perpendicular magnetic layer is inverted.Under normal circumstances, reverse current
Density is high.That is, needing high critical spinning current density when carrying out the switching of magnet state to magnetosphere.
Summary of the invention
In view of this, the purpose of the disclosure be at least partly to provide it is a kind of with improve performance and reduce power consumption from
Revolve track torque actuated device and the memory device including this spin(-)orbit torque actuated device.
An aspect of this disclosure discloses a kind of spin(-)orbit torque actuated device, the first magnetism stacked including sequence
Layer, heavy metal layer and the second magnetospheric stacked structure, wherein first magnetosphere has an intra-face anisotropy, and described the
Two magnetospheres have perpendicular magnetic anisotropy.
Wherein, the heavy metal layer includes platinum, tantalum or tungsten.
Wherein, when turn-on current density is greater than reverse current density in heavy metal layer, in first magnetosphere
The direction of magnetization and the second magnetospheric direction of magnetization are reversed.
Wherein, the current direction and the first magnetospheric intra-face anisotropy direction respectively where plane each other substantially
In parallel, and the two directions are perpendicular to one another.
Wherein, first magnetosphere and the second magnetosphere exchange interaction, the exchange interaction is iron
It is magnetic or antiferromagnetic.
Wherein, the intensity of the exchange interaction is adjusted by changing the thickness of heavy metal layer.
Spin(-)orbit torque actuated device further includes the exchange biased structures being stacked on the second magnetosphere, and the exchange is inclined
It sets structure and is used to form symmetrical damage field.
Wherein, the described first magnetospheric initial magnetization direction is by the second magnetospheric initial magnetization direction and symmetrical destruction
Field determines.
Wherein, the exchange biased structures include the metal layer and third magnetosphere that sequence stacks.
Wherein, first magnetosphere includes the magnetic material of intra-face anisotropy, and second magnetosphere includes vertical
Anisotropic magnetic material.
Wherein, first magnetosphere and second magnetosphere include ferromagnetic material.
Wherein, first magnetosphere and the second magnetospheric saturation magnetization and each to different are adjusted as needed
Property constant.
Another aspect of the disclosure also discloses a kind of memory device comprising above-mentioned spin(-)orbit torque actuated device
Part.
Detailed description of the invention
By referring to the drawings to the description of the embodiment of the present disclosure, the above-mentioned and other purposes of the disclosure, feature and
Advantage will be apparent from, in the accompanying drawings:
Fig. 1 is to show the spin(-)orbit torque actuated device with single vertical anisotropic magnetic layer of the prior art
Perspective view；
Fig. 2 is shown according to the saturating of the spin(-)orbit torque actuated device with sandwich structure of the embodiment of the present disclosure
View；
Fig. 3 (a) and 3 (b) is the direction of magnetization variation in the spin(-)orbit torque actuated device according to the embodiment of the present disclosure
Schematic diagram；
Fig. 4 is the spin(-)orbit torque actuated device for being attached with exchange biased structures shown according to the embodiment of the present disclosure
Perspective view.
Specific embodiment
Hereinafter, will be described with reference to the accompanying drawings the embodiment of the present disclosure.However, it should be understood that these descriptions are merely illustrative,
And it is not intended to limit the scope of the present disclosure.In addition, in the following description, descriptions of well-known structures and technologies are omitted, to keep away
Exempt from the concept for unnecessarily obscuring the disclosure.
The various structural schematic diagrams according to the embodiment of the present disclosure are shown in the attached drawings.These figures are not drawn to scale
, wherein some details are magnified for the purpose of clear expression, and some details may be omitted.It is shown in the drawings
Various regions, the shape of layer and relative size, positional relationship between them are merely exemplary, in practice may be due to system
It makes tolerance or technical restriction and is deviated, and those skilled in the art may be additionally designed as required with difference
Shape, size, the regions/layers of relative position.
In the context of the disclosure, when one layer/element is referred to as located at another layer/element "upper", which can
May exist intermediate layer/element on another layer/element or between them.In addition, if in a kind of direction
In one layer/element be located at another layer/element "upper", then when turn towards when, which can be located at another layer/member
Part "lower".
In order to reduce reverse current density while realizing the driving element of SOT structure, that is, reduce high critical spin electricity
Current density, to reduce device power consumption, the disclosure contemplates a kind of sandwich sandwich, for example, FM/HM/FM sandwich.
The magnetosphere of different magnetic anisotropy is wherein all respectively arranged with above and below heavy metal layer (HM), for example, in a huge sum of money
Belong to the magnetosphere for being laminated with perpendicular magnetic anisotropy above layer, the magnetism of intra-face anisotropy is laminated with below heavy metal layer
Layer.The spin(-)orbit torque actuated device of sandwich interlayer is formed as a result,.Heavy metal layer can use such as platinum, tantalum or tungsten system
At.Magnetosphere can be such as ferromagnetic layer.Due to the magnetospheric effect of the intra-face anisotropy below heavy metal layer, so that tool
There is the spin(-)orbit torque actuated device reverse turn current density of sandwich interlayer less than as shown in Figure 1 only with vertical with single layer
The reverse current density of the spin(-)orbit torque actuated device of straight anisotropic magnetic layer.
Specifically, Fig. 2 shows the spin(-)orbit torque actuated devices with sandwich structure according to the embodiment of the present disclosure
Part.The spin(-)orbit torque actuated device may include lower magnetic layer 1003,1001 and of heavy metal layer that such as sequence stacks
The stacked structure of upper magnetic layer 1002, that is, a kind of heavy metal layer 1001 is by lower magnetic layer 1003 and upper magnetic layer 1002
The sandwich sandwich FM/HM/FM clamped.
Lower magnetic layer 1003 and upper magnetic layer 1002 can for example be made of magnetic material, it is preferable that can be such as
It is made of ferromagnetic material.Ferromagnetic material can be ferromagnetic material commonly used in the art, such as: Fe, Co, Ni and its alloy, especially
It is the alloy of above-mentioned material and B, Zr, Pt, Pd, Hf, Ta, V, Zr, Ti, Cr, W, Mo, Nb composition.Preferably, ferromagnetic material can be with
For example, by using CoFeB alloy.The saturation magnetization and anisotropy constant of lower magnetic layer 1003 and upper magnetic layer 1002
(coercivity), which can according to need, to be adjusted.Heavy metal layer 1001 belongs to a kind of non magnetic material with strong Quantum geometrical phase
Material.Specifically, heavy metal layer 1001 can for example be made of any one material in platinum (Pt), tantalum (Ta) or tungsten (W).Its
In, tungsten (W) can use Beta-W.In the present embodiment, it is described by taking tantalum (Ta) as an example.
In Fig. 3 (a), in ferromagnetic layer CoFeB (being shown as lower magnetic layer 1003 and upper magnetic layer 1002 in Fig. 2) and
In the sandwich sandwich of heavy metal layer Ta (being shown as heavy metal layer 1001 in Fig. 2), due to the strong SOC in heavy metal layer Ta
And logic gates, the electrons in heavy metal layer Ta generate the spin current of vertical direction, spin current causes interface spin product
Poly-, the spin of accumulation generates moment loading to adjacent ferromagnetic.As shown in Fig. 3 (a), in state (a), a huge sum of money is accumulated in respectively
The spin polarization for belonging to the upper interface surface of layer 1001 and the spin current of lower interface is contrary, the spin current at upper interface surface
Polarization direction is outside through paper, and the spin current polarization direction at lower interface penetrates paper inwards.As shown in Fig. 3 (b),
When turn-on current in heavy metal layer 1001 and when current density reaches certain threshold value, that is, after reaching reverse current density, shape occurs
State (b) accumulates in the spin polarization direction reversion of the upper interface surface of heavy metal layer 1001 and the spin current of lower interface respectively, from
And moment loading, therefore, top are generated to the direction of magnetization of adjacent upper magnetic layer 1002 and lower magnetic layer 1003 respectively
The direction of magnetization of magnetosphere 1002 and lower magnetic layer 1003 inverts simultaneously.Turn-on current direction and first in heavy metal layer 1001
Magnetospheric intra-face anisotropy direction respectively where plane it is generally parallel to each other, and antarafacial is vertical each other in the two directions.
As a result, by the electric current in control heavy metal layer 1001, upper magnetic layer 1002 and lower magnetic layer 1003 can control such as
Switch between state (a) and state (b) shown in Fig. 3 (a) and 3 (b), that is, can control upper magnetic layer 1002 and lower part magnetic
Property layer 1003 the direction of magnetization switching.
Compared to the spin(-)orbit torque actuated device with Single Magnetic layer, in FM/HM/FM sandwich sandwich
May exist exchange interaction between upper magnetic layer 1002 and lower magnetic layer 1003, which can be iron
It is magnetic or antiferromagnetic.That is, between upper magnetic layer 1002 and lower magnetic layer 1003 there may be ferromagnetic coupling or
Antiferromagnetic coupling.By the exchange interaction, the magnetic for leading to upper magnetic layer 1002 and lower magnetic layer 1003 can reduce
Change the current density of direction reversion.Therefore exchange interaction between the magnetosphere is passed through by the thickness effect of heavy metal layer
Adjust the intensity of the adjustable exchange interaction of thickness of heavy metal layer 1001.To sum up, upper magnetic layer and lower magnetic
Exchange interaction intensity between layer changes according to the thickness of upper magnetic layer and lower magnetic layer heavy metal layer.Meanwhile
It should also be mentioned that the reversion process also resistance with upper magnetic layer and lower magnetic layer between upper magnetic layer and lower magnetic layer
Buddhist nun is related, to influence the reverse current size of the multi-layer film structure.
Specifically, by experiment simulation it is recognised that heavy metal layer for same thickness, with single vertical respectively to
The reverse current density of the spin(-)orbit torque actuated device of the HM/FM structure of anisotropic magnetized layer is Jc=36.3mA/cm2Feelings
Under condition, the reverse current density using the spin(-)orbit torque actuated device of FM/HM/FM structure is Jc=28.6mA/cm2.Also
It is to say, in FM/HM/FM structure, by the exchange interaction between upper magnetic layer 1002 and lower magnetic layer 1003, certainly
The reverse current density of rotation track torque actuated device can decline 21% or so.At this point, upper magnetic layer 1002 and lower part magnetic
Antiferromagnetic exchange interaction strength between property layer 1003 is about A=1 × 10-2erg/cm2。
As shown in the above, the disclosure gives a kind of spin(-)orbit torque actuated of FM/HM/FM sandwich structure
Device is reduced by the exchange interaction between upper magnetic layer and lower magnetic layer in intermediate heavy metal layer
Thus reverse current density further decreases in heavy metal layer in the case where improving magnetospheric direction of magnetization speed reversal
Reverse current density, thus further decreases the power switched of spin(-)orbit torque actuated device, to significantly reduce spin
The power consumption of track torque actuated device.
In actual design, for upper magnetic layer and heavy metal layer (that is, the magnetosphere and a huge sum of money of perpendicular magnetic anisotropy
Belong to layer), lower magnetic layer appropriate (that is, intra-face anisotropy layer) is selected to optimize device design, to realize reverse current
The significant decrease of density.
In process practice, for the HM/FM structure with single vertical anisotropic magnetic layer, by heavy metal bottom
Portion deposits an intra-face anisotropy magnetosphere to realize that the spin(-)orbit torque of the FM/HM/FM sandwich structure of the disclosure is driven
Dynamic device.
It, can be on upper magnetic layer before deposited lower magnetosphere in order to realize the orientation reversion of upper magnetic layer
Side deposits symmetrical bias structure to form symmetrical damage field.Specifically, as shown in figure 4, it is heavy in the top of upper magnetic layer 1002
Product metal layer 1004, metal layer 1004 can for example be made of ruthenium (Ru), then magnetic in 1004 disposed thereon third of metal layer
Layer 1005, third magnetosphere 1005 have intra-face anisotropy.Third magnetosphere 1005 can use common ferromagnetic material.I.e.
The material of third magnetosphere 1005 can choose material identical with upper magnetic layer 1002 and lower magnetic layer 1003.Metal layer
1004 and third magnetosphere 1005 constitute bias structure, to form symmetrical damage field.Symmetrical damage field makes upper magnetic layer exist
Reverse current effect is lower to realize predictable orientation reversion.Further, since forming biasing before deposited lower magnetosphere 1003
Structure, therefore, in deposited lower magnetosphere, the initial magnetization direction of lower magnetic layer by upper magnetic layer initial magnetization side
To the direction co-determination with symmetrical damage field.
It will be understood by those skilled in the art that the symmetrical bias structure being located above upper magnetic layer is used to form symmetrical break
Bad field.Symmetrical damage field can be formed by other means, and therefore, symmetrical bias structure is not manufacture according to disclosure reality
Apply structure necessary to the spin(-)orbit torque actuated device of example.In a further embodiment, it is convenient to omit symmetrical bias structure.
In order to form the spin(-)orbit torque actuated device according to the embodiment of the present disclosure, a kind of manufacture spin(-)orbit is disclosed
The method of torque actuated device, comprising: the deposition of first magnetic layer on heavy metal layer；The deposited metal layer on the first magnetosphere；
Third magnetosphere is deposited on the metal layer；In the second magnetosphere of heavy metal layer bottom deposit.
It can be applied to various memory devices and logic device according to the spin(-)orbit torque actuated device of the embodiment of the present disclosure
Part.For example, can form arbitrary access by integrating multiple such spin(-)orbit torque actuated devices and other devices and deposit
Reservoir, and thus construct electronic equipment.
In the above description, the technical details such as composition, the deposition of each layer are not described in detail.But
It will be appreciated by those skilled in the art that can be by various technological means, come layer, the region etc. for forming required shape.In addition, being
Formation same structure, those skilled in the art can be devised by and process as described above not fully identical method.
In addition, although respectively describing each embodiment above, but it is not intended that the measure in each embodiment cannot be advantageous
Ground is used in combination.
The embodiment of the present disclosure is described above.But the purpose that these embodiments are merely to illustrate that, and simultaneously
It is non-in order to limit the scope of the present disclosure.The scope of the present disclosure is limited by appended claims and its equivalent.The disclosure is not departed from
Range, those skilled in the art can make a variety of alternatives and modifications, these alternatives and modifications should all fall in the model of the disclosure
Within enclosing.
Claims (13)
1. a kind of spin(-)orbit torque actuated device, the first magnetosphere, heavy metal layer and the second magnetosphere stacked including sequence
Stacked structure, wherein first magnetosphere has intra-face anisotropy, and second magnetosphere has vertical respectively to different
Property.
2. spin(-)orbit torque actuated device according to claim 1, wherein the heavy metal layer includes platinum, tantalum or tungsten.
3. spin(-)orbit torque actuated device according to claim 1, wherein when the turn-on current density in heavy metal layer
When greater than reverse current density, the direction of magnetization and the second magnetospheric direction of magnetization in first magnetosphere are anti-
To.
4. spin(-)orbit torque actuated device according to claim 3, wherein the current direction and first magnetospheric
Intra-face anisotropy direction respectively where plane it is generally parallel to each other, and the two directions are perpendicular to one another.
5. spin(-)orbit torque actuated device according to claim 1, wherein first magnetosphere and second magnetic
Property layer exchange interaction, the exchange interaction is ferromagnetic or antiferromagnetic.
6. spin(-)orbit torque actuated device according to claim 1, wherein the intensity of the exchange interaction passes through
Change the thickness of heavy metal layer to adjust.
7. spin(-)orbit torque actuated device according to claim 1 further includes the exchange being stacked on the second magnetosphere
Bias structure, the exchange biased structures are used to form symmetrical damage field.
8. spin(-)orbit torque actuated device according to claim 7, wherein the first magnetospheric initial magnetization side
It is determined to by the second magnetospheric initial magnetization direction and symmetrical damage field.
9. spin(-)orbit torque actuated device according to claim 1, wherein the exchange biased structures include sequence heap
Folded metal layer and third magnetosphere.
10. spin(-)orbit torque actuated device according to claim 1, wherein first magnetosphere includes each in face
The magnetic material of anisotropy, second magnetosphere include the magnetic material of perpendicular magnetic anisotropy.
11. spin(-)orbit torque actuated device according to claim 10, wherein first magnetosphere and described second
Magnetosphere includes ferromagnetic material.
12. spin(-)orbit torque actuated device according to claim 10, wherein it is magnetic to adjust described first as needed
Layer and the described second magnetospheric saturation magnetization and anisotropy constant.
13. a kind of memory device comprising spin(-)orbit torque actuated device described in -12 according to claim 1.
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| CN109301063B (en) | 2022-05-13 |
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