CN110246960A - The multi-functional spin(-)orbit torque type device and preparation method of full electricity regulation - Google Patents
The multi-functional spin(-)orbit torque type device and preparation method of full electricity regulation Download PDFInfo
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- CN110246960A CN110246960A CN201910535412.8A CN201910535412A CN110246960A CN 110246960 A CN110246960 A CN 110246960A CN 201910535412 A CN201910535412 A CN 201910535412A CN 110246960 A CN110246960 A CN 110246960A
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- H—ELECTRICITY
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Abstract
Present disclose provides a kind of multi-functional spin(-)orbit torque type device of full electricity regulation, sequentially production includes: substrate, smooth layer, vertical easy magnetization layer, heavy metal layer, easy magnetization layer and coating in face；The material of the vertical easy magnetization layer is perpendicular magnetic anisotropic Mn base feeromagnetic metal or Ferrimagnetic metal, including L10‑MnGa、L10‑MnAl、D022‑Mn3Ga or D022‑Mn3One of Ge or a variety of；The vertical easy magnetization layer with a thickness of 1~4nm；The easy magnetizing axis of the vertical easy magnetization layer is along face outside direction.The disclosure not only may be implemented the spin(-)orbit torque overturning of full electricity regulation, have the characteristics that low-power consumption, multi-functional and high reliability under conditions of not depending on externally-applied magnetic field.Also have the characteristics that the high response speed, long-life, high thermal stability, multi-functional, is highly suitable for exploitation high speed spin memory part and programmable spin logical device.
Description
Technical field
This disclosure relates to area of Spintronics more particularly to a kind of multi-functional spin(-)orbit torque type of full electricity regulation
Device and preparation method.
Background technique
Spin(-)orbit torque (SOT) effect provide it is a kind of by full electrical method in micro/nano-scale high efficiency regulatory magnetic moment
New mechanism, this is that next-generation low-power consumption and the development of non-volatile spintronics devices bring new opportunity.For example, being based on
The magnetic RAM (MRAM) of SOT effect may be implemented full electricity data write-in and read, while have it is non-volatile,
The advantages that high response speed, high density, strong high stability and processing compatibility, and traditional magnetic is driving and spin transfer torque
(STT) type MRAM, which is compared, possesses greater advantage.In addition, spin(-)orbit torque type device has significant multi-functional characteristic, this comes
The adjustability abundant during spin(-)orbit torque driving Magnetic moment reversal, the Magnetic moment reversal direction as electric current drives can be by inclined
Set the regulation of magnetic direction, critical reset current density can be manipulated by the intensity or voltage of bias magnetic field magnetic anisotropy come
It adjusts.However, its multi-functional realization be unable to do without auxiliary of externally-applied magnetic field in most spin(-)orbit torque type devices at present,
Which increase the difficulty of the complexity of device design, device power consumption and device miniaturization.
It, can also while being able to maintain device multi-functional characteristic in order to make spin(-)orbit torque type device really move towards practical
Realize that new principle, the new method of the full electricity regulation of device still need next further to be explored.
Summary of the invention
(1) technical problems to be solved
Present disclose provides the multi-functional spin(-)orbit torque type devices and preparation method of a kind of full electricity regulation, at least
Part solves technical problem set forth above.
(2) technical solution
According to one aspect of the disclosure, a kind of multi-functional spin(-)orbit torque type device of full electricity regulation is provided,
Sequentially production includes: substrate, smooth layer, vertical easy magnetization layer, heavy metal layer, easy magnetization layer and coating in face；
The material of the vertical easy magnetization layer be perpendicular magnetic anisotropic Mn base feeromagnetic metal or Ferrimagnetic metal, including
L10-MnGa、L10-MnAl、D022-Mn3Ga or D022-Mn3One of Ge or a variety of；The vertical easy magnetization layer with a thickness of 1
~4nm；The easy magnetizing axis of the vertical easy magnetization layer is along face outside direction.
In some embodiments of the present disclosure, the material of the heavy metal is Pt, Ta, W, Pd or other have strong spin rail
The heavy metal material of road coupling；The heavy metal with a thickness of 1-3nm.
In some embodiments of the present disclosure, the material of easy magnetization layer is Fe, Co, CoFe, Co in face2MnSi or
Co2FeAl, with a thickness of 2-6nm.
In some embodiments of the present disclosure, the material of the substrate is in GaAs, Si, glass, MgO, sapphire or SiC
It is one or more；The material of the smooth layer be GaAs, Si, MgO, Cr, InAs, InGaAs, AlGaAs, Al, Ta, CoGa or
One of Pd or a variety of；The material of the coating is one of Pt, Ta, Al or Pd or a variety of, the thickness of the coating
Degree is 1.5-3nm.
According to one aspect of the disclosure, a kind of multi-functional spin(-)orbit torque type device of full electricity regulation is additionally provided
Preparation method, include the following steps:
Take a substrate；
Vertical easy magnetization layer, heavy metal layer, easy magnetization layer and coating in face are sequentially made on substrate, are formed magnetic more
Film structure；
Magnetic multilayer film structure is placed in magnetic-field annealing under vacuum, completes preparation；
Wherein, the material of vertical easy magnetization layer be perpendicular magnetic anisotropic Mn base feeromagnetic metal or Ferrimagnetic metal, including
L10-MnGa、L10-MnAl、D022-Mn3Ga or D022-Mn3One of Ge or a variety of；Vertical easy magnetization layer with a thickness of 1~
4nm；The easy magnetizing axis of vertical easy magnetization layer is along face outside direction.
In some embodiments of the present disclosure, heavy metal layer be the heavy metal material with strong Quantum geometrical phase be Pt,
Ta, W, Pd or other heavy metal materials with strong Quantum geometrical phase；Heavy metal layer with a thickness of 1-3nm.
In some embodiments of the present disclosure, the material of substrate is one in GaAs, Si, glass, MgO, sapphire or SiC
Kind is a variety of.
In some embodiments of the present disclosure, the material of smooth layer is GaAs, Si, MgO, Cr, InAs, InGaAs,
One of AlGaAs, Al, Ta, CoGa or Pd or a variety of.
In some embodiments of the present disclosure, the material of easy magnetization layer is Fe, Co, CoFe, Co in face2MnSi or Co2FeAl
One of or it is a variety of；Easy magnetization layer with a thickness of 2-6nm in face.
In some embodiments of the present disclosure, the material of coating is Pt, Ta, Al or Pd；Coating with a thickness of 1.5-
3nm。
(3) beneficial effect
It can be seen from the above technical proposal that the multi-functional spin(-)orbit torque type device and system of the full electricity regulation of the disclosure
Preparation Method at least has the advantages that one of them or in which a part:
(1) disclosure under conditions of not depending on externally-applied magnetic field, turn over by the spin(-)orbit torque that full electricity regulation may be implemented
Turn, has the characteristics that low-power consumption, multi-functional and high reliability.
(2) vertical easy magnetization layer has superelevation perpendicular magnetic anisotropic, the low magnetic damping factor and high-spin pole in the disclosure
Change degree, this makes dependent spin electronics device have high tunneling magnetic resistance ratio, high-speed response and high thermal stability etc. significant
Feature has broad application prospects in SOT-MRAM and spin logical device field.
(3) heavy metal layer has strong Quantum geometrical phase in the disclosure, and pure spin can be generated by logic gates
It flows and induces vertical easy magnetization layer that magnetization reversal occurs.
(4) easy magnetization layer is acted on by Interlayer Exchange Coupling in face in the disclosure, can be provided needed for breaking symmetry
Equivalent Magnetic Field in face.
(5) smooth layer in the disclosure provides good interface flatness and Lattice Matching for the production of device.
(6) coating protects device as protective film in the disclosure.
Detailed description of the invention
Fig. 1 is the material structure figure of the multi-functional spin(-)orbit torque type device of the full electricity regulation of the embodiment of the present invention.
Fig. 2 is the preparation method process of the multi-functional spin(-)orbit torque type device of the full electricity regulation of the embodiment of the present invention
Figure.
Fig. 3 is the hysteresis loop of spin(-)orbit torque type device in the embodiment of the present invention.
Fig. 4 is that the current induced magnetization of spin(-)orbit torque type device in the embodiment of the present invention overturns curve.
[embodiment of the present disclosure main element symbol description in attached drawing]
1- substrate；
2- smooth layer；
The vertical easy magnetization layer of 3-；
4- heavy metal layer；
Easy magnetization layer in the face 5-；
6- coating.
Specific embodiment
Its multi-functional auxiliary for realizing too busy to get away externally-applied magnetic field in most spin(-)orbit torque type devices at present, this
Increase the difficulty of complexity, device power consumption and device miniaturization that device designs.In order to realize the magnetic for not depending on external magnetic field
Change overturning, it is main at present by introducing structural asymmetry, exchange bias field, Interlayer Exchange Coupling effect, polarized ferroelectricity lining
Equivalent Magnetic Field in the offer face of the methods of bottom.Wherein, the material preparation process of Interlayer Exchange Coupling method is more simple and convenient, spin
The Modulatory character of track torque is also stronger.Therefore, the present invention selects Interlayer Exchange Coupling method to realize full electrical method regulation
The purpose of spin(-)orbit torque type device magnetization reversal behavior.
Present disclose provides a kind of multi-functional spin(-)orbit torque type devices of full electricity regulation, and sequentially production includes: base
Piece, smooth layer, vertical easy magnetization layer, heavy metal layer, easy magnetization layer and coating in face；The material of the vertical easy magnetization layer is
Perpendicular magnetic anisotropic Mn base feeromagnetic metal or Ferrimagnetic metal, including L10-MnGa、L10-MnAl、D022-Mn3Ga or D022-
Mn3One of Ge or a variety of；The vertical easy magnetization layer with a thickness of 1~4nm；The easy magnetizing axis of the vertical easy magnetization layer
Along face outside direction.The spin(-)orbit power of full electricity regulation not only may be implemented under conditions of not depending on externally-applied magnetic field in the disclosure
Square overturning, has the characteristics that low-power consumption, multi-functional and high reliability.Also have high response speed, the long-life, high thermal stability,
The features such as multi-functional, is highly suitable for exploitation high speed spin memory part and programmable spin logical device.
In the research of past spin(-)orbit torque device, the certainty magnetization reversal of vertical easy magnetization material is not usually from
The auxiliary of face inner and outer magnetic field is opened, this is the key constraints that related device realizes industrialization.In the disclosure, spin(-)orbit power
Torque needed for square effect can provide vertical magnetic moment overturning, including class field force square and class damping torque.It is this can be in micro-nano
The method of scale high efficiency regulatory magnetic moment will significantly improve the integration density of device and reduce power consumption.In addition, the disclosure passes through optimization
Magnetic multilayer film structure realizes the electric current for not depending on external magnetic field using Equivalent Magnetic Field in Interlayer Exchange Coupling effect generation face
Drive the overturning of spin(-)orbit torque.In conclusion compared with prior art, which not only has spin
The fundamental characteristics of torque type device also has many advantages, such as without external magnetic field auxiliary, the regulation of full electricity and CMOS technology compatibility, to set
It counts information storage and logical operation device based on spin and provides new Research Thinking, with important potential science and application
Value.
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
Disclosure some embodiments will be done referring to appended attached drawing in rear and more comprehensively describe to property, some of but not complete
The embodiment in portion will be shown.In fact, the various embodiments of the disclosure can be realized in many different forms, and should not be construed
To be limited to this several illustrated embodiment；Relatively, these embodiments are provided so that the disclosure meets applicable legal requirement.
In first exemplary embodiment of the disclosure, a kind of multi-functional spin(-)orbit power of full electricity regulation is provided
Square type device.Fig. 1 is the material structure figure of the multi-functional spin(-)orbit torque type device of the full electricity regulation of the embodiment of the present invention.Such as
Shown in Fig. 1, the multi-functional spin(-)orbit torque type device of the full electricity regulation of the disclosure, sequentially production includes: substrate 1, smooth layer
2, vertical easy magnetization layer 3, heavy metal layer 4, easy magnetization layer 5 and coating 6 in face.The material of the vertical easy magnetization layer 3 is vertical
Straight magnetic anisotropy Mn base feeromagnetic metal or Ferrimagnetic metal, including L10-MnGa、L10-MnAl、D022-Mn3Ga or D022-
Mn3One of Ge or a variety of；The vertical easy magnetization layer 3 with a thickness of 1~4nm；The easy magnetization of the vertical easy magnetization layer 3
Axis is along face outside direction.
The L1 of tetragonal phase0-MnGa、L10-MnAl、D022-Mn3Ga and D022-Mn3Ge have superelevation perpendicular magnetic anisotropic,
The low magnetic damping factor and high spin-polarization degree, this makes dependent spin electronics device have high tunneling magnetic resistance ratio, high speed
The notable features such as response and high thermal stability have broad application prospects in SOT-MRAM and spin logical device field.Cause
This, selects above-mentioned Mn base perpendicular magnetic anisotropic material as vertical easy magnetization layer in the present invention.
Heavy metal layer 4 has strong Quantum geometrical phase, and pure spin current can be generated by logic gates and is induced and is hung down
Magnetization reversal occurs for straight easy magnetization layer.The material of heavy metal is Pt, Ta, W, Pd or other huge sum of moneys with strong Quantum geometrical phase
Belong to material；The heavy metal with a thickness of 1-3nm.
Easy magnetization layer 5 is acted on by Interlayer Exchange Coupling in face, can provide equivalent magnetic in face needed for breaking symmetry
?.The material of easy magnetization layer 5 is Fe, Co, CoFe, Co in face2MnSi or Co2FeAl, with a thickness of 2-6nm.
The material of substrate 1 is preferably GaAs (001) substrate in the present embodiment.Smooth layer 2 makes on the substrate 1, described flat
The material of slip layer 2 is GaAs transition zone, with a thickness of 200nm.Vertical easy magnetization layer 3 is produced on smooth layer 2, in this example material
Material is preferably D022-Mn3Ga, with a thickness of 3nm.Heavy metal layer 4 is produced on vertical easy magnetization layer 3, usually has strong spin rail
The material of road coupling, preferred material is Pt in this example, with a thickness of 2nm.Easy magnetization layer 5 is produced on heavy metal layer 4 in face,
The material of easy magnetization layer 5 is preferably Co in the face, with a thickness of 2nm.Coating 6 is produced on the covering in face on easy magnetization layer 5
The material of layer 6 is preferably Al, with a thickness of 3nm.
In first exemplary embodiment of the disclosure, a kind of multi-functional spin(-)orbit of full electricity regulation is additionally provided
The preparation method of torque type device.Fig. 2 is the multi-functional spin(-)orbit torque type device of the full electricity regulation of the embodiment of the present invention
Preparation method flow chart.As shown in Figure 2, comprising:
Semi-insulated GaAs (001) substrate is put into MBE and prepares chamber, Chamber vacuum degree is higher than 2 × 10-7Pa.Except qi exhaustion
After oxygen, substrate temperature is risen to 560 DEG C, deposits GaAs smooth layer, growth rate 10nm/min, with a thickness of 200nm.
The temperature of substrate is down to 150-250 DEG C, grows the Ferrimagnetic bianry alloy D0 with perpendicular magnetic anisotropic22-
Mn3Ga, growth rate about 1nm/min rise to 300 DEG C of holding 20min, vertical easy magnetization layer are made with a thickness of 40nm.
Substrate temperature is down to 0-100 DEG C, electron beam evaporation power supply is opened, acceleration voltage is set as 5KV, emission current is
100-120mA grows Pt heavy metal layer, and using film thickness gauge in-situ monitoring, film deposition thickness is 2nm, and substrate temperature is risen to
300 DEG C of holding 20min；
Substrate temperature is down to 0-100 DEG C, in aufwuchsplate then easy magnetization layer Co rises to underlayer temperature with a thickness of 2nm
300 DEG C, keep 20min；
Substrate temperature is down to 0-100 DEG C, one layer of Al coating is grown, with a thickness of 2nm.Since Al can be sent out in air
Raw oxidation reaction forms fine and close Al2O3, play a protective role to device.Finally obtaining structure is GaAs/GaAs buffer/
The magnetoresistance effect of D022-Mn3Ga/Pt/Co/Al.
Finally, the magnetoresistance effect to preparation carries out magnetic-field annealing under vacuum, the multi-functional spin of full electricity regulation is obtained
Track torque type device.
As shown in figure 3, GaAs/GaAs buffer/D022-Mn3Ga/Pt/Co/Al magnetoresistance effect is in vertical direction
Hysteresis loop shows D022-Mn3The vertical easy magnetization layer of Ga possesses preferable perpendicular magnetic anisotropic, and easy magnetization layer in the face Co
Easy magnetizing axis is located in face.
As shown in figure 4, being based on GaAs/GaAs buffer/D022-Mn3The Hall bridge device of Ga/Pt/Co/A1 magnetoresistance effect
Part assists electric current off field to drive magnetization reversal curve in different sides.It can be found that even if when in-plane magnetic field is zero, R-I
There is apparent unusual Hall magneto-resistor jump, i.e. current induced D0 in curve22-Mn3Ga magnetic moment is spun upside down.This result
Illustrate during the electric current of the spin(-)orbit torque type device drives magnetization reversal, in-plane magnetic field is non-required.In addition, R-
The overturning polarity and critical current density of I curve can be regulated and controled by changing the size and Orientation of in-plane magnetic field, be had
Significant multifunctional characteristics.
So far, attached drawing is had been combined the embodiment of the present disclosure is described in detail.It should be noted that in attached drawing or saying
In bright book text, the implementation for not being painted or describing is form known to a person of ordinary skill in the art in technical field, and
It is not described in detail.In addition, the above-mentioned definition to each element and method be not limited in mentioning in embodiment it is various specific
Structure, shape or mode, those of ordinary skill in the art simply can be changed or be replaced to it.
According to above description, those skilled in the art should be to the multi-functional spin(-)orbit torque of the disclosure full electricity regulation
Type device and preparation method have clear understanding.
In conclusion the disclosure provides multi-functional spin(-)orbit torque type device and the preparation side of a kind of full electricity regulation
The spin(-)orbit torque overturning of full electricity regulation may be implemented under conditions of not depending on externally-applied magnetic field in method, have low-power consumption,
The advantages that multi-functional and high reliability, so as to be widely used in the every field in electronics.
It should also be noted that, the direction term mentioned in embodiment, for example, "upper", "lower", "front", "rear", " left side ",
" right side " etc. is only the direction with reference to attached drawing, not is used to limit the protection scope of the disclosure.Through attached drawing, identical element by
Same or similar appended drawing reference indicates.When may cause understanding of this disclosure and cause to obscure, conventional structure will be omitted
Or construction.
And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure
Content.In addition, in the claims, any reference symbol between parentheses should not be configured to the limit to claim
System.
It unless there are known entitled phase otherwise anticipates, the numerical parameter in this specification and appended claims is approximation, energy
Enough bases pass through the resulting required characteristic changing of content of this disclosure.Specifically, all be used in specification and claim
The middle content for indicating composition, the number of reaction condition etc., it is thus understood that repaired by the term of " about " in all situations
Decorations.Under normal circumstances, the meaning expressed refers to include by specific quantity ± 10% variation in some embodiments, some
± 5% variation in embodiment, ± 1% variation in some embodiments, in some embodiments ± 0.5% variation.
Furthermore word "comprising" does not exclude the presence of element or step not listed in the claims.It is located in front of the element
Word "a" or "an" does not exclude the presence of multiple such elements.
In addition, unless specifically described or the step of must sequentially occur, there is no restriction in the above institute for the sequence of above-mentioned steps
Column, and can change or rearrange according to required design.And above-described embodiment can be based on the considerations of design and reliability, that
This mix and match is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be freely combined
Form more embodiments.
Similarly, it should be understood that in order to simplify the disclosure and help to understand one or more of each open aspect,
Above in the description of the exemplary embodiment of the disclosure, each feature of the disclosure is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the disclosed method should not be interpreted as reflecting the following intention: i.e. required to protect
The disclosure of shield requires features more more than feature expressly recited in each claim.More precisely, as following
Claims reflect as, open aspect is all features less than single embodiment disclosed above.Therefore,
Thus the claims for following specific embodiment are expressly incorporated in the specific embodiment, wherein each claim itself
All as the separate embodiments of the disclosure.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. a kind of multi-functional spin(-)orbit torque type device of full electricity regulation, wherein sequentially production include: substrate, smooth layer,
Vertical easy magnetization layer, heavy metal layer, easy magnetization layer and coating in face；
The material of the vertical easy magnetization layer is perpendicular magnetic anisotropic Mn base feeromagnetic metal or Ferrimagnetic metal, including L10-
MnGa、L10-MnAl、D022-Mn3Ga or D022-Mn3One of Ge or a variety of；The vertical easy magnetization layer with a thickness of 1~
4nm；The easy magnetizing axis of the vertical easy magnetization layer is along face outside direction.
2. a kind of multi-functional spin(-)orbit torque type device of full electricity regulation according to claim 1, wherein described heavy
The material of metal is Pt, Ta, W, Pd or other heavy metal materials with strong Quantum geometrical phase；The heavy metal with a thickness of
1-3nm。
3. a kind of multi-functional spin(-)orbit torque type device of full electricity regulation according to claim 1, wherein in face easily
The material of magnetized layer is Fe, Co, CoFe, Co2MnSi or Co2FeAl, with a thickness of 2-6nm.
4. a kind of multi-functional spin(-)orbit torque type device of full electricity regulation according to any one of claims 1 to 3,
In, the material of the substrate is one of GaAs, Si, glass, MgO, sapphire or SiC or a variety of；The material of the smooth layer
Material is one of GaAs, Si, MgO, Cr, InAs, InGaAs, AlGaAs, Al, Ta, CoGa or Pd or a variety of；The coating
Material be one of Pt, Ta, Al or Pd or a variety of, the coating with a thickness of 1.5-3nm.
5. a kind of preparation method of the multi-functional spin(-)orbit torque type device of full electricity regulation, includes the following steps:
Take a substrate；
Vertical easy magnetization layer, heavy metal layer, easy magnetization layer and coating in face are sequentially made on substrate, form magnetoresistance effect
Structure；
Magnetic multilayer film structure is placed in magnetic-field annealing under vacuum, completes preparation；
Wherein, the material of vertical easy magnetization layer is perpendicular magnetic anisotropic Mn base feeromagnetic metal or Ferrimagnetic metal, including L10-
MnGa、L10-MnAl、D022-Mn3Ga or D022-Mn3One of Ge or a variety of；Vertical easy magnetization layer with a thickness of 1~4nm；
The easy magnetizing axis of vertical easy magnetization layer is along face outside direction.
6. a kind of preparation method of the multi-functional spin(-)orbit torque type device of full electricity regulation according to claim 5,
In, heavy metal layer be the heavy metal material with strong Quantum geometrical phase be Pt, Ta, W, Pd or other with strong spin(-)orbit coupling
The heavy metal material of conjunction；Heavy metal layer with a thickness of 1-3nm.
7. a kind of preparation method of the multi-functional spin(-)orbit torque type device of full electricity regulation according to claim 5,
Wherein, the material of substrate is one of GaAs, Si, glass, MgO, sapphire or SiC or a variety of.
8. a kind of preparation method of the multi-functional spin(-)orbit torque type device of full electricity regulation according to claim 5,
Wherein, the material of smooth layer be one of GaAs, Si, MgO, Cr, InAs, InGaAs, A1GaAs, Al, Ta, CoGa or Pd or
It is a variety of.
9. a kind of preparation method of the multi-functional spin(-)orbit torque type device of full electricity regulation according to claim 5,
In, the material of easy magnetization layer is Fe, Co, CoFe, Co in face2MnSi or Co2One of FeAl or a variety of；Easy magnetization layer in face
With a thickness of 2-6nm.
10. a kind of preparation method of the multi-functional spin(-)orbit torque type device of full electricity regulation according to claim 5,
In, the material of coating is Pt, Ta, Al or Pd；Coating with a thickness of 1.5-3nm.
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| CN110851882A (en) * | 2019-10-21 | 2020-02-28 | 华中科技大学 | Physical unclonable function generation method and system based on SOT effect |
| CN112652706A (en) * | 2019-10-12 | 2021-04-13 | 中国科学院半导体研究所 | Spin orbit torque storage unit without external magnetic field |
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