CN110246960B - Fully-electrically-regulated multifunctional spin orbit torque device and preparation method thereof - Google Patents
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Abstract
The present disclosure provides a method for full electrical controlThe multifunctional spin orbit torque device is sequentially manufactured by the following steps: the device comprises a substrate, a smooth layer, a vertical easy-magnetization layer, a heavy metal layer, an in-plane easy-magnetization layer and a covering layer; the perpendicular easy magnetization layer is made of perpendicular magnetic anisotropy Mn-based ferromagnetic metal or ferrimagnetic metal, including L10‑MnGa、L10‑MnAl、D022‑Mn3Ga or D022‑Mn3One or more of Ge; the thickness of the vertical easy magnetization layer is 1-4 nm; the easy axis of the perpendicular easy layer is in an out-of-plane direction. The method can realize the full-electronic control of the spin orbit torque overturning without depending on an external magnetic field, and has the characteristics of low power consumption, multiple functions, high reliability and the like. The method also has the characteristics of high response speed, long service life, high thermal stability, multiple functions and the like, and is very suitable for developing high-speed spin memory devices and programmable spin logic devices.
Description
Technical Field
The disclosure relates to the field of spinning electronics, in particular to a fully-electronically-regulated multifunctional spinning orbit torque device and a preparation method thereof.
Background
The Spin Orbit Torque (SOT) effect provides a new mechanism for efficiently regulating and controlling magnetic moment in a micro-nano scale through a full-electronic method, and new opportunities are brought to the development of next-generation low-power-consumption and nonvolatile spintronics devices. For example, a Magnetic Random Access Memory (MRAM) based on the SOT effect can realize all-electrical data writing and reading, and has the advantages of non-volatility, high response speed, high density, high stability, strong process compatibility, and the like, and has great advantages compared with the conventional magnetic driving type MRAM and the Spin Transfer Torque (STT) type MRAM. In addition, the spin orbit torque device has remarkable multifunctional characteristics, which are derived from abundant adjustability in the process of driving the magnetic moment to flip by the spin orbit torque, for example, the flip direction of the current-driven magnetic moment can be regulated by the direction of a bias magnetic field, and the critical flip current density can be regulated by controlling the magnetic anisotropy by the strength of the bias magnetic field or voltage. However, at present, in most spin orbit torque devices, the realization of the versatility is not independent of the assistance of the external magnetic field, which increases the complexity of the device design, the power consumption of the device and the difficulty of the miniaturization of the device.
In order to make the spin orbit torque type device really practical, a new principle and a new method for realizing full electrical regulation of the device while keeping the multifunctional characteristics of the device still need to be further explored.
Disclosure of Invention
Technical problem to be solved
The present disclosure provides a fully electronically controlled multifunctional spin-orbit torque device and a method for manufacturing the same to at least partially solve the above-mentioned technical problems.
(II) technical scheme
According to one aspect of the present disclosure, there is provided a fully electronically controlled multifunctional spin-orbit torque device, which is sequentially fabricated to include: the device comprises a substrate, a smooth layer, a vertical easy-magnetization layer, a heavy metal layer, an in-plane easy-magnetization layer and a covering layer;
the perpendicular easy magnetization layer is made of perpendicular magnetic anisotropy Mn-based ferromagnetic metal or ferrimagnetic metal, including L10-MnGa、L10-MnAl、D022-Mn3Ga or D022-Mn3One or more of Ge; the thickness of the vertical easy magnetization layer is 1-4 nm; the easy axis of the perpendicular easy layer is in an out-of-plane direction.
In some embodiments of the present disclosure, the material of the heavy metal is Pt, Ta, W, Pd or other heavy metal material with strong spin-orbit coupling; the thickness of the heavy metal is 1-3 nm.
In some embodiments of the present disclosure, the material of the in-plane easy magnetization layer is Fe, Co, CoFe, Co2MnSi or Co2FeAl with the thickness of 2-6 nm.
In some embodiments of the present disclosure, the substrate is made of one or more of GaAs, Si, glass, MgO, sapphire, or SiC; the material of the smoothing layer is one or more of GaAs, Si, MgO, Cr, InAs, InGaAs, AlGaAs, Al, Ta, CoGa or Pd; the material of the covering layer is one or more of Pt, Ta, Al or Pd, and the thickness of the covering layer is 1.5-3 nm.
According to one aspect of the present disclosure, there is also provided a method for preparing a fully electronically controlled multifunctional spin-orbit torque-type device, comprising the following steps:
taking a substrate;
sequentially manufacturing a vertical easy-magnetization layer, a heavy metal layer, an in-plane easy-magnetization layer and a covering layer on a substrate to form a magnetic multilayer film structure;
placing the magnetic multilayer film structure in vacuum for magnetic field annealing to finish the preparation;
wherein the perpendicular easy-magnetization layer is made of perpendicular magnetic anisotropy Mn-based ferromagnetic metal or ferrimagnetic metal, including L10-MnGa、L10-MnAl、D022-Mn3Ga or D022-Mn3One or more of Ge; the thickness of the vertical easy magnetization layer is 1-4 nm; the magnetization easy axis of the perpendicular easy magnetization layer is in the out-of-plane direction.
In some embodiments of the present disclosure, the heavy metal layer is a heavy metal material with strong spin-orbit coupling, and the heavy metal material is Pt, Ta, W, Pd or other heavy metal materials with strong spin-orbit coupling; the thickness of the heavy metal layer is 1-3 nm.
In some embodiments of the present disclosure, the material of the substrate is one or more of GaAs, Si, glass, MgO, sapphire, or SiC.
In some embodiments of the present disclosure, the material of the smoothing layer is one or more of GaAs, Si, MgO, Cr, InAs, InGaAs, AlGaAs, Al, Ta, CoGa, or Pd.
In some embodiments of the present disclosure, the material of the in-plane easy magnetization layer is Fe, Co, CoFe, Co2MnSi or Co2One or more of FeAl; the thickness of the in-plane easy magnetization layer is 2-6 nm.
In some embodiments of the present disclosure, the material of the capping layer is Pt, Ta, Al, or Pd; the thickness of the covering layer is 1.5-3 nm.
(III) advantageous effects
According to the technical scheme, the fully electrically regulated multifunctional spin-orbit torque device and the preparation method disclosed by the invention have at least one or part of the following beneficial effects:
(1) the self-rotating orbit torque overturning device can realize the full-electrical regulation and control of the self-rotating orbit torque overturning without depending on an external magnetic field, and has the characteristics of low power consumption, multiple functions, high reliability and the like.
(2) The perpendicular easy-magnetization layer in the disclosure has ultrahigh perpendicular magnetic anisotropy, low magnetic damping factor and high spin polarization degree, so that the related spin electronics device has the remarkable characteristics of high tunneling magnetoresistance ratio, high-speed response, high thermal stability and the like, and has wide application prospects in the fields of SOT-MRAM and spin logic devices.
(3) The heavy metal layer in the present disclosure has strong spin-orbit coupling, can generate pure spin current by spin hall effect and induce magnetization switching of the perpendicular easy magnetization layer.
(4) The in-plane easy magnetization layer in this disclosure can provide the in-plane equivalent magnetic field required to break symmetry through interlayer exchange coupling.
(5) The smoothing layer in the present disclosure provides good interface flatness and lattice matching for device fabrication.
(6) The cover layer serves as a protective film in this disclosure to protect the device.
Drawings
Fig. 1 is a material structure diagram of a fully electronically controlled multifunctional spin-orbit torque device according to an embodiment of the present invention.
Fig. 2 is a flow chart of a method for manufacturing a fully electronically controlled multifunctional spin-orbit torque-type device according to an embodiment of the present invention.
FIG. 3 is a hysteresis loop of a spin-orbit torque device according to an embodiment of the present invention.
FIG. 4 is a graph of current induced magnetization switching for a spin orbit torque device in accordance with an embodiment of the present invention.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
1-a substrate;
2-a smoothing layer;
3-perpendicular easy magnetization layer;
4-heavy metal layer;
5-in-plane easy magnetization layer;
6-covering layer.
Detailed Description
At present, the realization of the multifunctionality of most spin orbit torque devices does not leave the assistance of an external magnetic field, so that the complexity of device design, the power consumption of the devices and the difficulty of device miniaturization are increased. In order to realize magnetization switching independent of an external magnetic field, in-plane equivalent magnetic fields are provided mainly by introducing structural asymmetry, exchange bias fields, interlayer exchange coupling effects, polarized ferroelectric substrates and other methods. The interlayer exchange coupling method has the advantages of simple and convenient material preparation process and stronger controllability of spin orbit torque. Therefore, the invention selects the interlayer exchange coupling method to realize the purpose of regulating and controlling the magnetization reversal behavior of the spin orbit torque device by a full electrical method.
The utility model provides a multi-functional spin orbit torque device of full electronics regulation and control, the preparation includes in order: the device comprises a substrate, a smooth layer, a vertical easy-magnetization layer, a heavy metal layer, an in-plane easy-magnetization layer and a covering layer; the perpendicular easy magnetization layer is made of perpendicular magnetic anisotropy Mn-based ferromagnetic metal or ferrimagnetic metal, including L10-MnGa、L10-MnAl、D022-Mn3Ga or D022-Mn3One or more of Ge; the thickness of the vertical easy magnetization layer is 1-4 nm; the easy axis of the perpendicular easy layer is in an out-of-plane direction. The method can realize the full-electronic control of the spin orbit torque overturning without depending on an external magnetic field, and has the characteristics of low power consumption, multiple functions, high reliability and the like. The method also has the characteristics of high response speed, long service life, high thermal stability, multiple functions and the like, and is very suitable for developing high-speed spin memory devices and programmable spin logic devices.
In the past research of spin orbit torque devices, the deterministic magnetization reversal of a perpendicular easy-to-magnetize material is usually not assisted by an in-plane external magnetic field, which is a main limiting factor for realizing industrialization of related devices. In the present disclosure, the spin orbit torque effect may provide the torque required for the perpendicular magnetic moment to flip, including a field-like torque and a damping-like torque. The method capable of efficiently regulating and controlling the magnetic moment in the micro-nano scale can obviously improve the integration density of the device and reduce the power consumption. In addition, the magnetic multilayer film structure is optimized, the interlayer exchange coupling effect is utilized to generate an in-plane equivalent magnetic field, and the current-driven spin orbit torque overturning independent of the external magnetic field is realized. In conclusion, compared with the prior art, the spin orbit torque type device not only has the basic characteristics of the spin torque type device, but also has the advantages of no need of external magnetic field assistance, full-electronic regulation, CMOS process compatibility and the like, provides a new research idea for designing spin-based information storage and logic operation devices, and has important potential scientific and application values.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
Certain embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the disclosure are shown. Indeed, various embodiments of the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements.
In a first exemplary embodiment of the present disclosure, a fully electronically regulated multifunctional spin-orbit torque-type device is provided. Fig. 1 is a material structure diagram of a fully electronically controlled multifunctional spin-orbit torque device according to an embodiment of the present invention. As shown in fig. 1, the fully electrically controlled multifunctional spin-orbit torque device of the present disclosure is sequentially fabricated to include: a substrate 1, a smooth layer 2, a perpendicular easy-magnetization layer 3, a heavy metal layer 4, an in-plane easy-magnetization layer 5, and a cover layer 6. The perpendicular easy magnetization layer 3 is made of perpendicular magnetic anisotropy Mn-based ferromagnetic metal or ferrimagnetic metal, including L10-MnGa、L10-MnAl、D022-Mn3Ga or D022-Mn3One or more of Ge; the thickness of the vertical easy magnetization layer 3 is 1-4 nm; the magnetization easy axis of the perpendicular easy magnetization layer 3 is in the out-of-plane direction.
Tetragonal phase L10-MnGa、L10-MnAl、D022-Mn3Ga and D022-Mn3Ge has ultrahigh perpendicular magnetic anisotropy, low magnetic damping factor and high spin polarization degree, so that the related spin electronics device has the remarkable characteristics of high tunneling magnetoresistance ratio, high-speed response, high thermal stability and the like, and is applied to SOT-MRAM and spinThe logic device field has wide application prospect. Therefore, the above-described Mn-based perpendicular magnetic anisotropy material is selected as the perpendicular easy magnetization layer in the present invention.
The heavy metal layer 4 has strong spin-orbit coupling, can generate pure spin current by the spin hall effect and induce magnetization switching of the perpendicular easy magnetization layer. The material of the heavy metal is Pt, Ta, W, Pd or other heavy metal materials with strong spin-orbit coupling; the thickness of the heavy metal is 1-3 nm.
The in-plane easy magnetization layer 5 can provide an in-plane equivalent magnetic field required for breaking symmetry by interlayer exchange coupling action. The material of the in-plane easy magnetization layer 5 is Fe, Co, CoFe, Co2MnSi or Co2FeAl with the thickness of 2-6 nm.
The material of the substrate 1 in this embodiment is preferably a GaAs (001) substrate. The smoothing layer 2 is manufactured on the substrate 1, and the material of the smoothing layer 2 is a GaAs transition layer with the thickness of 200 nm. The perpendicular easy-to-magnetize layer 3 is made on the smooth layer 2, in this example the material is preferably D022-Mn3Ga, 3nm in thickness. The heavy metal layer 4 is fabricated on the perpendicular easy magnetization layer 3, and is typically a material with strong spin-orbit coupling, in this example the preferred material is Pt, with a thickness of 2 nm. An in-plane easy magnetization layer 5 is formed on the heavy metal layer 4, and the material of the in-plane easy magnetization layer 5 is preferably Co and has a thickness of 2 nm. A cap layer 6 is made on the in-plane easy-to-magnetize layer 5, the material of the cap layer 6 preferably being Al and having a thickness of 3 nm.
In a first exemplary embodiment of the present disclosure, a method for manufacturing a fully electronically controlled multifunctional spin-orbit torque-type device is also provided. Fig. 2 is a flow chart of a method for manufacturing a fully electronically controlled multifunctional spin-orbit torque-type device according to an embodiment of the present invention. As shown in fig. 2, includes:
and putting the semi-insulating GaAs (001) substrate into an MBE preparation chamber, wherein the vacuum degree of the chamber is higher than 2 x 10 < -7 > Pa. After degassing and deoxidation, the substrate temperature is raised to 560 ℃, and a GaAs smooth layer is deposited, the growth rate is 10nm/min, and the thickness is 200 nm.
The temperature of the substrate is reduced to 150 ℃ and 250 ℃, and the ferrimagnetic binary alloy D0 with vertical magnetic anisotropy is grown22-Mn3Ga with the growth rate of about 1nm/min and the thickness of 40nm is heated to 300 ℃ and kept for 20min to prepare the vertical easy-magnetization layer.
Reducing the temperature of the substrate to 0-100 ℃, turning on an electron beam evaporation power supply, setting the acceleration voltage to 5KV, setting the emission current to 100-120mA, growing a Pt heavy metal layer, carrying out in-situ monitoring by using a film thickness meter, keeping the deposition thickness of the film to 2nm, and raising the temperature of the substrate to 300 ℃ for 20 min;
reducing the temperature of the substrate to 0-100 ℃, growing an in-plane easy-magnetization layer Co with the thickness of 2nm, then raising the temperature of the substrate to 300 ℃, and keeping the temperature for 20 min;
and reducing the temperature of the substrate to 0-100 ℃, and growing an Al covering layer with the thickness of 2 nm. Because Al can generate oxidation reaction in air to form compact Al2O3And the device is protected. Finally, the magnetic multilayer film with the structure of GaAs/GaAs buffer/D022-Mn3Ga/Pt/Co/Al is obtained.
And finally, carrying out magnetic field annealing on the prepared magnetic multilayer film under vacuum to obtain the fully-electronically-controlled multifunctional spin-orbit torque device.
As shown in FIG. 3, GaAs/GaAs buffer/D022-Mn3The hysteresis loop of the Ga/Pt/Co/Al magnetic multilayer film in the perpendicular direction shows D022-Mn3The Ga perpendicular easy magnetization layer possesses good perpendicular magnetic anisotropy, and the easy magnetization axis of the Co in-plane easy magnetization layer is in-plane.
As shown in FIG. 4, based on GaAs/GaAs buffer/D022-Mn3The current driving magnetization reversal curve of the Hall bridge device of the Ga/Pt/Co/A1 magnetic multilayer film under different in-plane auxiliary fields. It can be found that even when the in-plane magnetic field is zero, the R-I curve has obvious abnormal Hall magnetoresistance jump, namely current induction D022-Mn3The Ga magnetic moment is flipped up and down. This result indicates that an in-plane magnetic field is unnecessary during the current-driven magnetization switching of the spin orbit torque type device. In addition, the reversal polarity and the critical current density of the R-I curve can be regulated and controlled by changing the size and the direction of the in-plane magnetic field, and the multifunctional magnetic field has the remarkable characteristic of multiple functions.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.
From the above description, those skilled in the art should clearly understand that the fully electrically modulated multifunctional spin-orbit torque device and the fabrication method of the present disclosure are well-known.
In summary, the present disclosure provides a fully electrically controlled multifunctional spin orbit torque-type device and a manufacturing method thereof, which can realize fully electrically controlled spin orbit torque inversion without depending on an external magnetic field, and have the advantages of low power consumption, multiple functions, high reliability, and the like, so that the device can be widely applied to various fields in electronics.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. A fully electronically regulated multifunctional spin orbit torque device, wherein the sequential fabrication comprises: the device comprises a substrate, a smooth layer, a vertical easy-magnetization layer, a heavy metal layer, an in-plane easy-magnetization layer and a covering layer;
the perpendicular easy magnetization layer is made of perpendicular magnetic anisotropy Mn-based ferromagnetic metal or ferrimagnetic metal, including L10-MnGa、L10-MnAl、D022-Mn3Ga or D022-Mn3One or more of Ge; the thickness of the vertical easy magnetization layer is 1-4 nm; the easy axis of the perpendicular easy layer is in an out-of-plane direction.
2. The device according to claim 1, wherein the material of the heavy metal is Pt, Ta, W, Pd or other heavy metal materials with strong spin-orbit coupling; the thickness of the heavy metal layer is 1-3 nm.
3. The device of claim 1, wherein the material of the in-plane easy magnetization layer is Fe, Co, CoFe, Co2MnSi or Co2FeAl with the thickness of 2-6 nm.
4. A fully electronically regulated multifunctional spin-orbit torque device according to any one of claims 1 to 3, wherein the substrate is made of one or more of GaAs, Si, glass, MgO, sapphire or SiC; the material of the smoothing layer is one or more of GaAs, Si, MgO, Cr, InAs, InGaAs, AlGaAs, Al, Ta, CoGa or Pd; the material of the covering layer is one or more of Pt, Ta, Al or Pd, and the thickness of the covering layer is 1.5-3 nm.
5. A preparation method of a fully-electronically-regulated multifunctional spin-orbit torque device comprises the following steps:
taking a substrate;
sequentially manufacturing a vertical easy-magnetization layer, a heavy metal layer, an in-plane easy-magnetization layer and a covering layer on a substrate to form a magnetic multilayer film structure;
placing the magnetic multilayer film structure in vacuum for magnetic field annealing to finish the preparation;
wherein the perpendicular easy-magnetization layer is made of perpendicular magnetic anisotropy Mn-based ferromagnetic metal or ferrimagnetic metal, including L10-MnGa、L10-MnAl、D022-Mn3Ga or D022-Mn3One or more of Ge; the thickness of the vertical easy magnetization layer is 1-4 nm; the magnetization easy axis of the perpendicular easy magnetization layer is in the out-of-plane direction.
6. The method for preparing a fully electronically regulated multifunctional spin-orbit torque-type device according to claim 5, wherein the heavy metal layer is made of a heavy metal material with strong spin-orbit coupling such as Pt, Ta, W, Pd or other heavy metal materials with strong spin-orbit coupling; the thickness of the heavy metal layer is 1-3 nm.
7. The method for manufacturing a fully electronically controlled multifunctional spin-orbit torque device as claimed in claim 5, wherein the substrate is made of one or more of GaAs, Si, glass, MgO, sapphire and SiC.
8. The method for manufacturing a fully electrically controlled multifunctional spin-orbit torque-type device according to claim 5, wherein the material of the smoothing layer is one or more of GaAs, Si, MgO, Cr, InAs, InGaAs, AlGaAs, Al, Ta, CoGa or Pd.
9. The method for preparing an all-electrically controlled multifunctional spin-orbit torque-type device according to claim 5, wherein the material of the in-plane easy-magnetization layer is Fe, Co, CoFe, Co2MnSi or Co2One or more of FeAl; the thickness of the in-plane easy magnetization layer is 2-6 nm.
10. The method for preparing an all-electronically controlled multifunctional spin-orbit torque-type device according to claim 5, wherein the material of the cap layer is Pt, Ta, Al or Pd; the thickness of the covering layer is 1.5-3 nm.
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