CN110851882B - Physical unclonable function generation method and system based on SOT effect - Google Patents
Physical unclonable function generation method and system based on SOT effect Download PDFInfo
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- CN110851882B CN110851882B CN201910997447.3A CN201910997447A CN110851882B CN 110851882 B CN110851882 B CN 110851882B CN 201910997447 A CN201910997447 A CN 201910997447A CN 110851882 B CN110851882 B CN 110851882B
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- G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
- G06F21/70—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
- G06F21/71—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure computing or processing of information
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Abstract
The invention belongs to the field of self-rotation information security. Aiming at the technical problems of complex manufacturing process and large potential safety hazard of the existing physical unclonable function device, the invention provides a physical unclonable function generation method and system based on SOT effect. Firstly, constructing a Hall Bar array by adopting the same batch of devices manufactured by photoetching, etching and other processes, initializing all devices of the Hall Bar array, and applying the same writing current; secondly, randomly selecting N devices from the array according to a given address to obtain abnormal Hall resistances of the N devices; and finally, comparing every two abnormal Hall resistors of the N devices, and generating a response according to a comparison result. The invention is manufactured by simple processes such as photoetching, etching and the like to obtain different abnormal Hall resistance distributions, and the preparation process is simple and has higher safety performance; moreover, such randomness can be reconstructed by changing the initialization current and the write current, further improving the safety performance.
Description
Technical Field
The invention belongs to the field of Spin information security, and particularly relates to a Spin Orbit Torque (SOT) effect-based physical unclonable function generation method and system.
Background
Information security is more important in the era of high-speed development of information technology, because the improvement of the technology not only brings certain convenience to users, but also brings a series of challenges to the information security of the users due to the development of attack technology means. The traditional encryption method is easy to be cracked by various attack means, so that the personal information and the privacy of a user cannot be well protected, and people invent a Physical Unclonable Function (PUF) with higher security performance. Physical unclonable functions use the inherent structural differences of the physical entities themselves to construct security primitives, and for a particular physical unclonable function, a given stimulus outputs an unpredictable response, referred to as a stimulus response pair (CRP). Reconfigurable means that refreshes can be performed to reduce security risks when excitation response pairs are exhausted or subject to attacks. In a practical environment, it is impossible to obtain two identical devices, similar to human fingerprints and irises, even by the same production means or process conditions, so that the physical unclonable function devices are uniquely present and unclonable. Due to the excellent safety performance, the physical unclonable function has good application in the aspects of property right protection, key generation, system authentication and the like, and has good application prospect in other fields such as information safety and the like.
The physical unclonable function was originally proposed by Pappu et al and is an optical physical unclonable function, but the complicated manufacturing process and strict conditions of use limit the practical application of the optical physical unclonable function. With the development of technology, silicon-based physical unclonable functions are proposed, and silicon-based physical unclonable functions based on line signal delay are simple in structure but easy to attack by modeling, so that a novel physical unclonable function device which is simple in structure and can resist various attacks needs to be proposed.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a method and a system for reconstructing a physical unclonable function based on a spin orbit torque effect, and aims to solve the technical problems of complex manufacturing process and large potential safety hazard of the conventional physical unclonable function device.
In order to achieve the above object, the present invention provides a method for generating a physically unclonable function based on the SOT effect, comprising the following steps:
(1) initializing all devices of a Hall Bar array and applying the same write current;
(2) randomly selecting N devices from the array according to a given address to obtain abnormal Hall resistances of the N devices;
(3) and comparing the abnormal Hall resistances of the N devices in pairs, and generating a response according to the comparison result.
Further, the Hall Bar array is constructed by adopting the same batch of devices manufactured by the processes of photoetching, etching and the like.
Further, the step (1) includes: an initialization current is applied to all devices and a constant planar magnetic field is applied in the direction of the current, and after initialization is completed, the same write current is applied to all devices to place all devices in a stable intermediate state.
Further, the step (2) includes: and randomly selecting N devices from the array according to the addresses of given rows and given columns, passing a reading current to the row of the selected device, reading the abnormal Hall voltage, and further acquiring the abnormal Hall resistance values of the N devices.
Further, the method further comprises: and (3) changing the magnitudes of the initialization current and the write current to enable the initial states of all the devices to be in different resistance states from the step (1).
The invention also provides a physical unclonable function generation system based on the SOT effect, which comprises the following components:
the current application module is used for initializing all devices of the Hall Bar array and applying the same write current;
the selection module is used for randomly selecting N devices from the array according to a given address to obtain abnormal Hall resistances of the N devices;
and the comparison module is used for comparing the abnormal Hall resistances of the N devices in pairs and generating a response according to a comparison result.
Furthermore, the component units of the Hall Bar array are the same batch of devices manufactured by the processes of photoetching, etching and the like.
Further, the current application module applies an initialization current to all the devices, applies a constant planar magnetic field in the current direction, and applies the same write current to all the devices after initialization is completed, so that all the devices are in a stable intermediate state.
Further, the selection module arbitrarily selects N devices from the array according to the address of a given row and column, passes a read current to the row of the selected device, and reads the abnormal hall voltage, thereby obtaining the abnormal hall resistance values of the N devices.
Further, the system further comprises: and the reconfiguration module is used for changing the magnitudes of the initialization current and the write current so that the initial states of all the devices are in different resistance states from the last initialization.
According to the technical scheme, the ferromagnetic material multilayer film preparation device is manufactured through simple photoetching, etching and other processes to obtain different abnormal Hall resistance distributions, so that the method and the system for generating the reconfigurable physical unclonable function can be realized, the preparation process is simple, and the safety performance is high; moreover, the randomness can be reconstructed by changing the initialization current and the write current, and when the CRP is used up or attacked, the CRP can be updated by reconstruction, so that the use times can be increased, and the safety performance is further improved.
Drawings
FIG. 1 is a schematic diagram of a reconfigurable physically unclonable function device based on spin orbit torque effect according to the present invention.
Fig. 2(a) and (b) are respectively a statistical schematic diagram of the current-dependent switching curves and critical switching currents of a plurality of physical unclonable function devices under a certain planar magnetic field.
FIG. 3 is a system diagram of a reconfigurable physically unclonable function implementing the present invention.
Fig. 4 is a flowchart of a method for generating a physically unclonable function based on spin orbit torque effect according to the present invention.
Fig. 5(a) and (b) are distributions of abnormal hall resistance of all devices before and after reconstruction, respectively.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Due to the difference of preparation processes, a certain randomness difference can be shown between devices of the same batch of devices manufactured by simple photoetching, etching and other processes, the same initialization current and writing current are carried out on all the devices under a stable external plane magnetic field due to Spin-Orbit Torque (SOT) effect, the direction of the external magnetic field is consistent with the direction of the current, the abnormal Hall resistance of each device has difference, different initialization current and writing current are applied to the devices, and different abnormal Hall resistance distributions can be obtained, so that reconfigurable physical unclonable function devices can be manufactured, the preparation process is simple, and the safety performance is high.
The reconfigurable physical unclonable function device based on the spin orbit torque effect is manufactured by utilizing a vertical magnetized ferromagnetic material multilayer film. As shown in fig. 1, the multilayered film of perpendicular-magnetized ferromagnetic material includes, from bottom to top, a spin current generation layer L1, a ferromagnetic layer L2, an insulating layer L3, and a capping layer L4 in this order, the lowermost spin current generation layer L1 is used to generate a spin current, the spin-orbit torque of the spin current changes the magnetic domain state of the ferromagnetic layer L2, a magnetic domain wall moves under the combined action of the spin-orbit torque and an applied planar magnetic field, and the movement of the magnetic domain wall changes the ratio of magnetic domains in the ferromagnetic layer L2 in the upward magnetization direction and the downward magnetization direction, so that the magnetic domain state of the ferromagnetic layer L2 is changed, and the abnormal hall resistance of the device changes accordingly.
Photoetching and etching the vertical magnetized ferromagnetic material multilayer film to obtain Hall Bar structures, wherein each Hall Bar structure is a physical unclonable function device. The membrane surface of the Hall Bar structure is in a cross shape, two ends of one straight line of the cross shape are provided with a first electrode pair (E1, E1 '), and two ends of the other straight line are provided with a second electrode pair (E2, E2'). Due to the difference of the manufacturing processes such as photoetching, etching and the like, the devices manufactured in the same batch have randomness difference. Firstly, applying a same initialization current between any electrode pair of all prepared devices, and applying a stable planar magnetic field in the direction of the current application to make all the devices in an initialization state; then, applying a same write current to all the devices, wherein the moving positions of the magnetic domain walls of each device are different due to the difference among the devices, so that the abnormal Hall resistance of each device is different; and then, applying a reading current between the electrode pairs of the devices which are connected with the writing current, reading the abnormal Hall voltage between the other electrode pair, and calculating the abnormal Hall resistance value of each device according to the applied reading current and the read voltage.
Fig. 2 shows the curves of the current flipping of a plurality of devices (8 are taken as an example) and the statistical diagram of the critical flipping current thereof. FIG. 2(a) shows the current-dependent flip curves of all devices, and it can be seen from the graph that, under a stable applied plane magnetic field, when all devices are initialized to the initial state and then the same write current is applied, the resistance values of all devices are different; fig. 2(b) shows the critical switching currents of all devices, which are different from one device to another. Due to the random difference, the resistance value of the device obtained by the same process condition can be used as an entropy source to construct a physical unclonable function.
The Hall Bar array 300 shown in fig. 3 is constructed using devices having the above characteristics, the constituent cells of the array being the same batch of devices fabricated by photolithography, etching, etc., each cell being connected to a row decoder 302 and a column selector 304 by row and column lines. A particular cell in the array can be selected based on the address of a given row and column. It is readily understood that the stimulus for the physically unclonable function of this embodiment is the device address, and the particular devices are selected by the address signal.
As shown in fig. 4, in one aspect, the present invention provides a method for generating a physically unclonable function based on spin orbit torque effect, including the following steps:
s401, initializing all devices of a Hall Bar array, and applying the same write current;
s402, randomly selecting N devices from the array according to a given address, and obtaining abnormal Hall resistances of the N devices;
and S403, comparing every two abnormal Hall resistors of the N devices, and generating a response according to the comparison result.
In step S401, an initialization current is applied to all the devices through the row decoder 302, and a constant planar magnetic field is applied in the current direction, and after initialization is completed, the same write current is applied to all the devices, so that all the devices are in a stable intermediate state, and write operation is completed. At this time, the abnormal hall resistance values of the devices obtained by the same process conditions are different due to the randomness difference, which is the theoretical basis for the implementation of the present invention.
In step S402, N devices are arbitrarily selected from the array according to the address of a given row and column, a read current is passed through the row decoder 302 to the row of the selected device, and the abnormal hall voltage is read, thereby obtaining the abnormal hall resistance values of the N devices.
In the steps S401-402, the current density of the write current is greater than or equal to 106A/cm2Current density of read current is less than 106A/crn2。
In step S403, the abnormal hall resistances of the N selected devices are compared with each other by the comparing module 306, and the resistance values of the two devices are compared each time, and two logic states "0" and "1" can be obtained according to a defined comparison algorithm, and since the resistance values of the devices are randomly distributed, the probability of occurrence of "0" or "1" is also completely random. Taking N as an example, comparing the resistances of the selected 8 devices two by two, each time two devices are a group, and obtaining the result
The group comparison result, since each group comparison result is a binary number "0" or "1" with one bit, it is obvious that a binary output with 28 bits can be obtained according to the 28 groups comparison result, and the 28-bit binary output obtained in this embodiment is the response of the physical unclonable function. It is easy to understand that since the read current passed by the device is the same, the resistance value does not need to be calculated, and only the voltage V to be read1、V2……V8The comparison is performed two by two, that is, the voltage comparison is performed as shown in FIG. 3。
According to another aspect of the present invention, a physically unclonable function based on a spin orbit torque effect depends on the magnitude of the abnormal hall resistance of the device determined by the initialization current and the write current, whereby a physically unclonable function with higher safety performance can be obtained. Different initialization of the device and application of different write currents can result in different distributions of abnormal hall resistance, thereby realizing reconfigurability.
Fig. 5 shows the distribution of the abnormal hall resistance of all devices before and after reconstruction. Fig. 5(a) corresponds to the first operation mode: and applying an initialization current to all the devices, applying a constant planar magnetic field in the direction to enable all the devices to be in a low-resistance state, applying a write current to all the devices after initialization is completed to enable all the devices to be in a stable intermediate state, and finally adding a read current to read the resistance values of all the devices to obtain the resistance distribution of all the devices. Fig. 5(b) corresponds to a second operation mode, the operation process is substantially the same as the first operation mode, except that the magnitudes of the initialization current and the write current need to be changed, so that all the devices are in the high resistance state in the initial state, and then are in the stable intermediate state by the write operation, so that the resistance distribution different from that in the first case is obtained. By switching between the first operation mode and the second operation mode, even if the N devices selected twice are the same, the obtained outputs are different, so that the reconfigurable device can be realized by the mode.
According to the above method, the present embodiment may further include the steps of:
s404, changing the magnitude of the initialization current and the writing current to enable all the devices to be in the resistance state different from the resistance state in the step S401.
After such reconstruction, steps S402 and S403 are performed, which will not be described herein.
Correspondingly to the above method, an embodiment of the present invention further provides a system for generating a physically unclonable function based on a spin orbit torque effect, including:
the current application module is used for initializing all devices of the Hall Bar array and applying the same write current;
the selection module is used for randomly selecting N devices from the array according to a given address to obtain abnormal Hall resistances of the N devices;
and the comparison module is used for comparing the abnormal Hall resistances of the N devices in pairs and generating a response according to a comparison result.
In this embodiment, the components of the Hall Bar array are the same batch of devices manufactured by the processes of photolithography, etching, and the like.
The current application module applies an initialization current to all the devices, applies a constant planar magnetic field in the current direction, and applies the same write current to all the devices after initialization is completed so that all the devices are in a stable intermediate state.
The selection module randomly selects N devices from the array according to the address of a given row and a given column, and the selection module passes through a reading current and reads the abnormal Hall voltage of the row of the selected device so as to obtain the abnormal Hall resistance values of the N devices.
The physical unclonable function generation system further comprises:
and the reconfiguration module changes the magnitudes of the initialization current and the write current to enable the initial state of all the devices to be in a resistance state different from the last initialization.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (8)
1. A physical unclonable function generation method based on SOT effect is characterized by comprising the following steps:
(1) initializing all devices of a Hall Bar array and applying the same write current;
(2) randomly selecting N devices from the array according to a given address to obtain abnormal Hall resistances of the N devices;
(3) comparing every two abnormal Hall resistances of the N devices, and generating a response according to a comparison result, wherein the response is the response of the physical unclonable function;
the step (1) comprises the following steps:
an initialization current is applied to all devices and a constant planar magnetic field is applied in the direction of the current, and after initialization is completed, the same write current is applied to all devices to place all devices in a stable intermediate state.
2. The method of generating a physically unclonable function of claim 1, wherein the HallBar array is built using the same batch of devices fabricated by photolithography and etching processes.
3. The method of generating a physically unclonable function of claim 2, wherein step (2) comprises:
and randomly selecting N devices from the array according to the addresses of given rows and given columns, passing a reading current to the row of the selected device, reading the abnormal Hall voltage, and further acquiring the abnormal Hall resistance values of the N devices.
4. The method of generating a physically unclonable function of claim 1, further comprising:
and (3) changing the magnitudes of the initialization current and the write current to enable the initial states of all the devices to be in different resistance states from the step (1).
5. A system for generating a physically unclonable function based on the SOT effect, comprising:
the current application module is used for initializing all devices of the Hall Bar array and applying the same write current;
the selection module is used for randomly selecting N devices from the array according to a given address to obtain abnormal Hall resistances of the N devices;
the comparison module is used for comparing every two abnormal Hall resistors of the N devices and generating a response according to a comparison result, wherein the response is the response of the physical unclonable function;
the current application module applies an initialization current to all the devices, applies a constant planar magnetic field in the current direction, and applies the same write current to all the devices after initialization is completed so that all the devices are in a stable intermediate state.
6. The physical unclonable function generation system of claim 5, wherein the components of the HallBar array are a same batch of devices fabricated by photolithography and etching processes.
7. The physical unclonable function generation system of claim 5, wherein the selection module arbitrarily selects N devices from the array according to an address of a given row and column, passes a read current to the row of the selected devices, and reads the abnormal Hall voltage to obtain abnormal Hall resistance values of the N devices.
8. The physical unclonable function generation system of claim 7, further comprising:
and the reconfiguration module is used for changing the magnitudes of the initialization current and the write current so that the initial states of all the devices are in different resistance states from the last initialization.
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