CN110752287B - Reconfigurable PUF (physical unclonable function) construction method based on random magnetic domain wall movement - Google Patents
Reconfigurable PUF (physical unclonable function) construction method based on random magnetic domain wall movement Download PDFInfo
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Abstract
The invention discloses a reconfigurable PUF (physical unclonable function) construction method based on random magnetic domain wall movement, and belongs to the field of information security. The method comprises the following steps: leading reset current pulses to a first pair of bottom electrodes of each nonvolatile device in the devices with the SOT effect, and simultaneously adding an external magnetic field to ensure that the magnetic domain magnetization directions of the ferromagnetic layers in each nonvolatile device are the same; keeping the magnetic field unchanged, and introducing a set current pulse with the direction opposite to that of the reset current pulse to the first pair of bottom electrodes of each nonvolatile device to ensure that the magnetic domain wall of each nonvolatile device generates random movement; testing current is led into the first pair of bottom electrodes of each nonvolatile device, and abnormal Hall resistance of each nonvolatile device is read; abnormal hall resistances of nonvolatile device arrays forming the device with the SOT effect are converted into binary ciphers, and therefore the reconfigurable PUF is achieved. The PUF uses current or magnetic field to act on the magnetic domain wall to drive the magnetic domain wall to move randomly, and has simple structure and guaranteed randomness, namely safety.
Description
Technical Field
The invention belongs to the field of information security, and particularly relates to a reconfigurable PUF (physical unclonable function) construction method based on random magnetic domain wall movement.
Background
Today, the information security of devices is very important in the rapid development of the internet of things. Compared with the traditional encryption method such as storing the secret key in the memory, the Physical Unclonable Function (PUF) has many advantages, such as small occupied area and low power consumption; are more difficult to attack; lower cost, etc. Therefore, PUFs have become one of the hot research hotspots in the field of hardware security in recent years.
The PUF is derived from inevitable differences generated in the manufacturing process of the device and physical randomness inside the device, so that the PUF is difficult to clone and has high safety. Applying an excitation to a device produces a unique, unpredictable response, with the same excitation producing the same response for the same device and the same excitation producing different responses for different devices. The specific stimulus-response pair forms the basis for information security authentication.
The first PUF is proposed by Pappu et al in Physical One-Way Fuctions.science 297, 2026-. However, such PUFs cannot be integrated with circuits, and many kinds of silicon-based PUFs such as sarm PUFs, arbiter PUFs, ring oscillator PUFs, and the like appear, which are currently the most widely used PUFs.
However, silicon-based PUFs have many problems, such as poor stability, resulting in false authentication; the number of CRPs is small, or the CRPs have correlation and are easy to crack; not reconfigurable and the like. The invention constructs the reconfigurable strong PUF based on the magnetic material structure, effectively solves the problems and is compatible with the CMOS process.
Patent CN201810239799 discloses a magnetic physical unclonable function device and a magnetic physical unclonable function device, which utilizes the characteristic of anisotropy of the interface of a cobalt-iron-boron film and a magnesium oxide film to prepare the physical unclonable function device based on magnetic anisotropy by changing the anisotropy at different positions. However, the randomness of the PUF is derived from the uneven thickness of the magnesium oxide film layer, the magnesium oxide is etched once, the structure determining randomness is determined, and the PUF cannot be reconstructed.
Disclosure of Invention
Aiming at the problems of too few CRP, low safety and irreconcilability in the prior art, the invention provides a reconfigurable PUF construction method based on random magnetic domain wall movement, aiming at preparing a reconfigurable strong PUF by utilizing the motion randomness of a magnetic domain wall under the action of current or a magnetic field.
To achieve the above object, according to a first aspect of the present invention, there is provided a reconfigurable PUF construction method based on stochastic domain wall movement, the method comprising the steps of:
s1, introducing a reset current pulse to a first pair of bottom electrodes of each nonvolatile device in the devices with the SOT effect, and simultaneously adding an external magnetic field to ensure that the magnetic domain magnetization directions of ferromagnetic layers in each nonvolatile device are the same;
s2, keeping the magnetic field unchanged, and introducing a set current pulse with the direction opposite to that of the reset current pulse into a first pair of bottom electrodes of each nonvolatile device to enable the magnetic domain wall of each nonvolatile device to move randomly;
s3, introducing a test current to the first pair of bottom electrodes of each nonvolatile device, and reading the abnormal Hall resistance of each nonvolatile device;
s4, converting abnormal Hall resistors of all nonvolatile device arrays forming the device with the SOT effect into binary ciphers, and accordingly realizing the reconfigurable PUF;
the device with the SOT effect based on the ferromagnetic material is composed of a plurality of nonvolatile device arrays, the nonvolatile device has a multilayer film structure and sequentially comprises the following components from bottom to top: a spin-current generation layer made of a heavy metal material or a topological insulator, a first pair of bottom electrodes, and a second pair of bottom electrodes; a ferromagnetic layer made of a ferromagnetic material; an insulating layer made of an insulating material; a cap layer made of a heavy metal material; the first pair of bottom electrodes and the second pair of bottom electrodes are orthogonal to each other;
when the easy axis direction of the magnetic moment of the ferromagnetic layer is a vertical direction, the direction of the external magnetic field is opposite to the pulse direction of the reset current, and when the easy axis direction of the magnetic moment of the ferromagnetic layer is a horizontal direction, the direction of the external magnetic field is vertical upwards.
To achieve the above object, according to a second aspect of the present invention, there is provided a reconfigurable PUF construction method based on random magnetic domain wall movement, the method comprising the steps of:
s1, applying a reset magnetic field pulse parallel to the easy axis direction of the magnetic moment of the ferromagnetic layer on a device based on an SOT effect to enable the magnetization direction of the ferromagnetic layer of each nonvolatile device to be the same as the reset magnetic field pulse direction;
s2, applying a set magnetic field pulse with the direction opposite to that of the reset magnetic field pulse on the device based on the SOT effect to enable the magnetic domain wall of each nonvolatile device in the device based on the SOT effect to move randomly;
s3, introducing a test current to the first pair of bottom electrodes of each nonvolatile device, and reading the abnormal Hall resistance value of each nonvolatile device;
s4, converting abnormal Hall resistors of all nonvolatile device arrays forming the device with the SOT effect into binary ciphers, and accordingly realizing the reconfigurable PUF;
the device with the SOT effect based on the ferromagnetic material is composed of a plurality of nonvolatile device arrays, the nonvolatile device has a multilayer film structure and sequentially comprises the following components from bottom to top: a spin-current generation layer made of a heavy metal material or a topological insulator, a first pair of bottom electrodes, and a second pair of bottom electrodes; a ferromagnetic layer made of a ferromagnetic material; an insulating layer made of an insulating material; a cap layer made of a heavy metal material; the first pair of bottom electrodes and the second pair of bottom electrodes are orthogonal to each other.
To achieve the above object, according to a third aspect of the present invention, there is provided a reconfigurable PUF construction method based on stochastic domain wall movement, the method comprising the steps of:
s1, introducing reset current pulses to two bottom electrodes of each nonvolatile device in the devices with the SOT effect, and simultaneously adding an external magnetic field to ensure that the magnetic domain magnetization directions of first ferromagnetic layers in each nonvolatile device are the same;
s2, keeping the magnetic field unchanged, and introducing a set current pulse with the direction opposite to that of the reset current pulse into two bottom electrodes of each nonvolatile device to enable the magnetic domain wall of each nonvolatile device to move randomly;
s3, introducing test current to any bottom electrode and any upper electrode of each nonvolatile device, and reading the resistance value of each nonvolatile device;
s4, converting the resistance of each nonvolatile device array forming the device with the SOT effect into a binary password, thereby realizing the reconfigurable PUF;
the device with the SOT effect is composed of a plurality of nonvolatile device arrays, and the nonvolatile device has a multilayer film structure and sequentially comprises the following components from bottom to top: a spin-flow generating layer made of a heavy metal material or a topological insulator, a first bottom electrode and a second bottom electrode, a first ferromagnetic layer made of a ferromagnetic material, a nonmagnetic layer made of an insulating material or a nonmagnetic metal material, a pinned second ferromagnetic layer made of a ferromagnetic material, a pinning layer made of an antiferromagnetic material, a capping layer made of a heavy metal material, and an upper electrode made of a conductive material, the first ferromagnetic layer and the second ferromagnetic layer having the same easy axis direction of magnetic moment;
when the easy axis direction of the magnetic moment of the first ferromagnetic layer is a vertical direction, the direction of an external magnetic field is opposite to the direction of a reset current pulse, and when the easy axis direction of the magnetic moment of the first ferromagnetic layer is a vertical direction, the direction of the external magnetic field is vertical upwards.
To achieve the above object, according to a fourth aspect of the present invention, there is provided a reconfigurable PUF construction method based on stochastic domain wall movement, the method comprising the steps of:
s1, applying a reset magnetic field pulse parallel to the easy axis direction of the magnetic moment of a first ferromagnetic layer on a device based on an SOT effect to enable the magnetization direction of the ferromagnetic layer of each nonvolatile device to be the same as the reset magnetic field pulse direction;
s2, applying a set magnetic field pulse with the direction opposite to that of the reset magnetic field pulse on the device based on the SOT effect to enable the magnetic domain wall of each nonvolatile device in the device based on the SOT effect to move randomly;
s3, introducing test current to any bottom electrode and any upper electrode of each nonvolatile device, and reading the resistance value of each nonvolatile device;
s4, converting the resistance of each nonvolatile device array forming the device with the SOT effect into a binary password, thereby realizing the reconfigurable PUF;
the device with the SOT effect is composed of a plurality of nonvolatile device arrays, and the nonvolatile device has a multilayer film structure and sequentially comprises the following components from bottom to top: a spin-flow generating layer made of a heavy metal material or a topological insulator, a first bottom electrode and a second bottom electrode, a first ferromagnetic layer made of a ferromagnetic material, a nonmagnetic layer made of an insulating material or a nonmagnetic metal material, a pinned second ferromagnetic layer made of a ferromagnetic material, a pinning layer made of an antiferromagnetic material, a capping layer made of a heavy metal material, and an upper electrode made of a conductive material, the first ferromagnetic layer and the second ferromagnetic layer having the same easy axis direction of magnetic moment.
Specifically, the magnitude and width of the set current pulse are smaller than the reset current pulse.
Specifically, the strength of the external magnetic field is greater than the DMI equivalent field.
Specifically, the set magnetic field pulse width is smaller than the reset magnetic field pulse.
Specifically, the magnetic field intensity of the reset magnetic field pulse is greater than the coercive force of the ferromagnetic layer, and the magnetic field intensity of the set magnetic field pulse is greater than the coercive force of the ferromagnetic layer.
Specifically, when the nonmagnetic layer is made of an insulating material that can be used for electron tunneling, the first ferromagnetic layer, the nonmagnetic layer, and the pinned second ferromagnetic layer constitute an MTJ structure, and the resistance value of the nonvolatile device is read according to the TMR effect and ohm's law; when the nonmagnetic layer is made of a nonmagnetic metal material, the first ferromagnetic layer, the nonmagnetic layer, and the pinned second ferromagnetic layer constitute a spin valve structure, and the resistance value of the nonvolatile device is read according to the GMR effect and ohm's law.
To achieve the above object, according to a fifth aspect of the present invention, there is provided a computer-readable storage medium having stored thereon a computer program which, when executed by a processor, implements the reconfigurable PUF construction method based on stochastic domain wall movement as described in the above aspect.
Generally, by the above technical solution conceived by the present invention, the following beneficial effects can be obtained:
(1) the invention promotes the movement of the magnetic domain wall by applying current pulse or magnetic field pulse, and carries out corresponding data processing on the read out magnetization state of the nonvolatile device by utilizing the randomness of the movement of the magnetic domain wall, thereby preparing the reconfigurable PUF.
(2) The reconstruction of the PUF is realized by repeating the setting and resetting operations including the reset current pulse, the set current pulse and the reset magnetic field pulse, and by utilizing the randomness of the movement of the magnetic domain wall.
(3) The invention selects the nonvolatile devices in the array, for example, the total number of the array is A, the number of the nonvolatile devices in one array is m, the number of the devices selected from the array for data processing is n, and the devices share the same number
And the CRP realizes the strong PUF by using the fact that the read magnetization state of the nonvolatile device is an analog quantity.
Drawings
Fig. 1 is a flowchart of a reconfigurable PUF construction method based on random magnetic domain wall movement according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a method for converting an analog quantity into a digital quantity according to an embodiment of the present invention;
fig. 3 is a flowchart of a reconfigurable PUF construction method based on random magnetic domain wall movement according to a second embodiment of the present invention;
fig. 4 is a flowchart of a reconfigurable PUF construction method based on random magnetic domain wall movement according to a third embodiment of the present invention;
fig. 5 is a flowchart of a reconfigurable PUF construction method based on random magnetic domain wall movement according to a fourth embodiment of the present invention;
fig. 6 is a flowchart of a reconfigurable PUF construction method based on random magnetic domain wall movement according to a fifth embodiment of the present invention;
fig. 7 is a flowchart of a reconfigurable PUF construction method based on random magnetic domain wall movement according to a sixth embodiment of the present invention;
fig. 8 is a flowchart of a reconfigurable PUF construction method based on random magnetic domain wall movement according to a seventh embodiment of the present invention;
fig. 9 is a flowchart of a reconfigurable PUF construction method based on random magnetic domain wall movement according to an eighth embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The prior art discloses a device based on ferromagnetic material and having an SOT (Spin-Orbit Torque) effect, which is composed of a plurality of nonvolatile device arrays, wherein the nonvolatile device has a multilayer film structure, and sequentially includes from bottom to top: a spin-current generation layer made of a heavy metal material or a topological insulator, a first pair of bottom electrodes, and a second pair of bottom electrodes; a ferromagnetic layer made of a ferromagnetic material; an insulating layer made of an insulating material; a cap layer made of a heavy metal material; the easy axis direction of the magnetic moments of the ferromagnetic layers is the vertical direction, and the first pair of bottom electrodes and the second pair of bottom electrodes are orthogonal to each other.
Specifically, the spin flow generation layer is of a hall bar structure, and the membrane surface of the spin flow generation layer is in a cross shape; the film faces of the ferromagnetic layer, the insulating layer, and the cap layer are rectangular or circular in nanometer size, and are sequentially stacked on the cross-shaped intersection portion of the spin-current generation layer.
As shown in fig. 1, the present invention provides a reconfigurable PUF construction method based on random magnetic domain wall movement, which includes the following steps:
s1, introducing a reset current pulse to a first pair of bottom electrodes of each nonvolatile device in the devices with the SOT effect, and simultaneously adding an external magnetic field with the direction opposite to the reset current pulse to ensure that the magnetic domain magnetization directions of ferromagnetic layers in each nonvolatile device are the same;
s2, keeping the magnetic field unchanged, and introducing a set current pulse with the direction opposite to that of the reset current pulse into a first pair of bottom electrodes of each nonvolatile device to enable the magnetic domain wall of each nonvolatile device to move randomly;
s3, introducing a test current to the first pair of bottom electrodes of each nonvolatile device, and reading the abnormal Hall resistance of each nonvolatile device;
and S4, converting abnormal Hall resistors of all nonvolatile device arrays forming the device with the SOT effect into a binary password, thereby realizing the reconfigurable PUF.
S1, introducing a reset current pulse to a first pair of bottom electrodes of each nonvolatile device in the devices with the SOT effect, and simultaneously adding an external magnetic field with the direction opposite to the reset current pulse to ensure that the magnetic domain magnetization directions of the ferromagnetic layers in each nonvolatile device are the same.
When a reset current pulse is introduced into the first pair of bottom electrodes, the duration of a pulse signal is short, and current flows through the spin current generation layer, the spin current generation layer can generate spin current perpendicular to the ferromagnetic layer due to the spin-orbit coupling effect, the spin current acts on the ferromagnetic layer, and an external magnetic field is added to break the space inversion symmetry, so that the magnetic domain wall of each nonvolatile device is pushed to move to the edge, and all magnetic domain magnetization directions of the ferromagnetic layers in all the nonvolatile devices are the same.
In order to secure the SOT effect, a path of a reset current pulse introduced into the spin current generation layer needs to be secured parallel to the ferromagnetic layer and straight. The magnitude and width of the reset current pulse are dependent on the device material and process, so that all domain magnetization directions of the ferromagnetic layer in all non-volatile devices are the same.
To ensure the SOT effect, the applied magnetic field is in the opposite direction to the reset current pulse. The magnetic field strength is greater than the DMI (Dzyakhinsky-Moriya Interaction, DM Interaction) equivalent field.
In the first embodiment, a magnetron sputtering process is adopted to grow a film with Ta (10nm)/CoFeB (1nm)/MgO (1nm)/Ta (2nm) from top to bottom; then adopting photoetching and etching process to obtain 6X 6 micrometers2The nonvolatile device of (1). At this time, the reset current pulse used was 10mA in amplitude and 1ms in width.
And S2, keeping the magnetic field unchanged, and introducing a set current pulse with the direction opposite to that of the reset current pulse into the first pair of bottom electrodes of each nonvolatile device to ensure that the magnetic domain wall of each nonvolatile device moves randomly.
A set current pulse is introduced into the first pair of bottom electrodes, when current flows through the spin current generation layer, the spin current generation layer can generate spin current perpendicular to the ferromagnetic layer due to the spin orbit coupling effect, the spin current acts on the ferromagnetic layer, an external magnetic field is added to break space inversion symmetry, and magnetic domain walls are pushed to move to a certain position in the middle randomly.
In order to secure the SOT effect, the path of a set current pulse flowing in the spin current generation layer needs to be secured parallel to the ferromagnetic layer and straight. The amplitude and width of the set current pulse are smaller than those of the reset current pulse, and are determined by the material and process of the device, and the direction of the set current pulse is opposite to that of the reset current pulse.
In the first embodiment, the set current pulse has an amplitude of 7mA and a width of 0.3 ms.
And S3, introducing test current to the first pair of bottom electrodes of each nonvolatile device, and reading the abnormal Hall resistance of each nonvolatile device.
And according to the abnormal Hall effect, a test current is introduced to the first pair of bottom electrodes of the nonvolatile device, the Hall voltage of the nonvolatile device is read by utilizing the abnormal Hall effect on the second pair of bottom electrodes, so that the abnormal Hall resistance of the nonvolatile device is calculated, and the resistance value of the abnormal Hall resistance represents the position of the magnetic domain wall. For example, assuming that the resistances of the abnormal hall resistors are distributed in [ -1000m Ω, 1000m Ω ], the domain wall is located at the left edge when the resistance of the abnormal hall resistor is-1000 m Ω, the domain wall is located at the center when the resistance of the abnormal hall resistor is 0m Ω, and the domain wall is located at the right edge when the resistance of the abnormal hall resistor is 1000m Ω. The reconfigurable PUF is realized based on the change of the magnetization state of the ferromagnetic material, so that the reconfigurable PUF does not cause large loss to the material and has good durability.
Similarly, the test current path needs to be parallel to the ferromagnetic layer and straight, and the magnitude of the test current needs to be 1 order of magnitude smaller than the set current pulse.
In the first embodiment, the test current has a current of less than 0.1 mA.
And S4, converting the abnormal Hall resistance of each nonvolatile device array forming the device with the SOT effect into a binary password, thereby realizing the reconfigurable PUF.
In the device based on the SOT effect, the magnetic domain wall positions of all nonvolatile devices are randomly distributed after a set current pulse is applied, and the read state can be used as a random password.
The reconfigurable PUF is realized by assuming that a device based on the SOT effect is composed of M nonvolatile device arrays, each nonvolatile device array can generate N binary ciphers, and the device based on the SOT effect can generate M N binary ciphers.
In the first embodiment, as shown in fig. 2, rh (i) represents an abnormal hall resistance value of the i-th device. In the order of the selected non-volatile devices in the array, the first abnormal hall resistance value RH (1) is greater than the second abnormal hall resistance value RH (2), b1Is 1, otherwise b1Is 0; then the first one is compared with the third one in the same way to assign b2First to fourth comparisons … … first to nth comparisons (n being the total number of devices in the array) are assigned b in the same wayn-1. The second device repeats the above steps, and the second device is compared with the third device by assigning b in the same wayn(ii) a The third device repeats step … … n-1 devices repeat the above steps and n devices generate an n (n-1)/2 bit binary code.
Repeating S1 through S4 may enable the PUF to generate a new binary secret without being associated with the old binary secret, thereby enabling reconstruction of the PUF.
As shown in fig. 3, a second embodiment provides a reconfigurable PUF construction method based on random magnetic domain wall movement, which includes the following steps:
s1, applying a reset magnetic field pulse on a device based on an SOT effect to enable the magnetization direction of a ferromagnetic layer of each nonvolatile device to be the same as the reset magnetic field pulse direction;
s2, applying a set magnetic field pulse with the direction opposite to that of the reset magnetic field pulse on the device based on the SOT effect to enable the magnetic domain wall of each nonvolatile device in the device based on the SOT effect to move randomly;
s3, introducing a test current to the first pair of bottom electrodes of each nonvolatile device, and reading the abnormal Hall resistance value of each nonvolatile device;
and S4, converting abnormal Hall resistors of all nonvolatile device arrays forming the device with the SOT effect into a binary password, thereby realizing the reconfigurable PUF.
And S1, applying a reset magnetic field pulse on the device based on the SOT effect, so that the magnetization direction of the ferromagnetic layer of each nonvolatile device is the same as the direction of the reset magnetic field pulse.
The second embodiment is similar to the first embodiment, except that a reset current pulse is applied + an external magnetic field is replaced with a reset magnetic field pulse, a set current pulse is replaced with a set magnetic field pulse, and a magnetic domain wall is directly pushed to move by a magnetic field.
And a reset magnetic field pulse is introduced into the first pair of bottom electrodes, and the reset magnetic field pulse can enable the magnetization direction of the magnetic domain opposite to the magnetization direction to be reversed, so that the magnetic domain wall of each nonvolatile device is pushed to move to the edge, and all the magnetic domain magnetization directions of the ferromagnetic layers in all the nonvolatile devices are the same.
The pulse direction of the applied reset magnetic field is vertical to the direction of the ferromagnetic layer, and the magnetic field intensity is larger than the coercive force of the ferromagnetic layer.
And S2, applying a set magnetic field pulse opposite to the reset magnetic field pulse direction to the device based on the SOT effect to enable the magnetic domain walls of the nonvolatile devices in the device based on the SOT effect to generate random movement.
The setting magnetic field pulse pushes the magnetic domain wall of each nonvolatile device to move randomly to a certain position in the middle.
The pulse direction of the applied setting magnetic field is opposite to that of the reset magnetic field, the magnetic field intensity is larger than the coercive force of the ferromagnetic layer, and the width is smaller than that of the reset magnetic field pulse.
The prior art also discloses a device based on the SOT effect, which is composed of a plurality of nonvolatile device arrays, wherein the nonvolatile device has a multilayer film structure, and sequentially includes from bottom to top: a spin-flow generating layer made of a heavy metal material or a topological insulator, a first bottom electrode and a second bottom electrode, a first ferromagnetic layer made of a ferromagnetic material, a nonmagnetic layer made of an insulating material or a nonmagnetic metal material, a pinned second ferromagnetic layer made of a ferromagnetic material, a pinning layer made of an antiferromagnetic material, a capping layer made of a heavy metal material, and an upper electrode made of a conductive material, the easy axis directions of magnetic moments of the first ferromagnetic layer and the second ferromagnetic layer being perpendicular directions.
When the nonmagnetic layer is made of an insulating material that can be used for electron tunneling, the first ferromagnetic layer, the nonmagnetic layer, and the pinned second ferromagnetic layer constitute an MTJ structure. When the nonmagnetic layer is made of a nonmagnetic metal material, the first ferromagnetic layer, the nonmagnetic layer, and the pinned second ferromagnetic layer constitute a spin valve structure. The nonmagnetic layer is made of MgO or Al2O3Or Cu.
Specifically, the film surfaces of the first ferromagnetic layer, the nonmagnetic layer, the pinned second ferromagnetic layer, the pinning layer, and the capping layer are polygonal or elliptical in the same size, and the film surface of the spin-flow generation layer is larger than the film surfaces of the other layers.
As shown in fig. 4, a third embodiment provides a reconfigurable PUF construction method based on random magnetic domain wall movement, which includes the following steps:
s1, introducing reset current pulses to two bottom electrodes of each nonvolatile device in the device with the SOT effect, and simultaneously adding an external magnetic field with the direction opposite to the reset current pulses to ensure that the magnetic domain magnetization directions of first ferromagnetic layers in each nonvolatile device are the same;
s2, keeping the magnetic field unchanged, and introducing a set current pulse with the direction opposite to that of the reset current pulse into two bottom electrodes of each nonvolatile device to enable the magnetic domain wall of each nonvolatile device to move randomly;
s3, introducing test current to any bottom electrode and any upper electrode of each nonvolatile device, and reading the resistance value of each nonvolatile device;
and S4, converting the resistance of each nonvolatile device array forming the device with the SOT effect into a binary password, thereby realizing the reconfigurable PUF.
And S1, introducing reset current pulses to two bottom electrodes of each nonvolatile device in the devices with the SOT effect, and simultaneously adding an external magnetic field with the direction opposite to the reset current pulses to ensure that the magnetic domain magnetization directions of the first ferromagnetic layers in each nonvolatile device are the same.
When the current flows through the spin current generation layer due to the spin orbit coupling effect, the spin current generation layer can generate spin current perpendicular to the ferromagnetic layer, the spin current acts on the ferromagnetic layer, the external magnetic field is added to break the space inversion symmetry, the magnetic domain wall is pushed to move to the edge, and the magnetic domain magnetization directions of the first ferromagnetic layers in the nonvolatile devices are the same.
In order to secure the SOT effect, a path of a reset current pulse introduced into the spin current generation layer needs to be secured parallel to the ferromagnetic layer and straight. The amplitude and width of the pulse are dependent on the device material and process such that the domain magnetization direction of the first ferromagnetic layer in each nonvolatile device is the same.
To ensure the SOT effect, the applied magnetic field is in the opposite direction to the reset current pulse. The magnetic field strength is greater than the DMI equivalent field.
And S2, keeping the magnetic field unchanged, and introducing a set current pulse with the direction opposite to that of the reset current pulse into the two bottom electrodes of each nonvolatile device to ensure that the magnetic domain wall of each nonvolatile device moves randomly.
When a set current pulse is introduced into the two bottom electrodes and current flows through the spin current generation layer, the spin current generation layer can generate spin current perpendicular to the ferromagnetic layer due to the spin-orbit coupling effect, and the spin current acts on the ferromagnetic layer to push a magnetic domain wall to move.
In order to secure the SOT effect, the path of a set current pulse flowing in the spin current generation layer needs to be secured parallel to the ferromagnetic layer and straight. The amplitude and width of the set current pulse are smaller than those of the reset current pulse, and are determined by the material and process of the device, and the direction of the set current pulse is opposite to that of the reset current pulse.
And S3, introducing test current to any bottom electrode and any upper electrode of each nonvolatile device, and reading the resistance value of each nonvolatile device.
And introducing a test current between the first bottom electrode/the second bottom electrode and the upper electrode, wherein a test current path needs to be ensured to be parallel to the ferromagnetic layer and be a straight line, and the current magnitude of the test current needs to be 1 order of magnitude smaller than that of the set current pulse.
When the nonmagnetic layer is made of an insulating material that can be used for electron tunneling, for example, MgO, the first ferromagnetic layer, the nonmagnetic layer, and the pinned second ferromagnetic layer constitute an MTJ structure. The resistance value of the nonvolatile device is read according to the TMR effect (Tunneling Magnetoresistance) and ohm's law.
When the nonmagnetic layer is made of a nonmagnetic metal material, the first ferromagnetic layer, the nonmagnetic layer, and the pinned second ferromagnetic layer constitute a spin valve structure. The resistance value of the nonvolatile device is read according to the GMR effect (Giant Magnetoresistance) and ohm's law.
And S4, converting the resistance of each nonvolatile device array forming the device with the SOT effect into a binary password, thereby realizing the reconfigurable PUF.
In the device based on the SOT effect, the magnetic domain wall positions of all nonvolatile devices are randomly distributed after a set current pulse is applied, and the read state can be used as a random password. The conversion of the resistor into a binary cipher mechanism is the same as in the first embodiment.
As shown in fig. 5, a reconfigurable PUF construction method based on random magnetic domain wall movement is provided in the fourth embodiment, and the method includes the following steps:
s1, applying a reset magnetic field pulse on a device based on an SOT effect to enable the magnetization direction of a ferromagnetic layer of each nonvolatile device to be the same as the reset magnetic field pulse direction;
s2, applying a set magnetic field pulse with the direction opposite to that of the reset magnetic field pulse on the device based on the SOT effect to enable the magnetic domain wall of each nonvolatile device in the device based on the SOT effect to move randomly;
s3, introducing test current to any bottom electrode and any upper electrode of each nonvolatile device, and reading the resistance value of each nonvolatile device;
and S4, converting the resistance of each nonvolatile device array forming the device with the SOT effect into a binary password, thereby realizing the reconfigurable PUF.
The fourth embodiment is similar to the third embodiment, except that the reset current pulse + the external magnetic field is replaced with a reset magnetic field pulse, the set current pulse + the external magnetic field is replaced with a set magnetic field pulse, and the magnetic domain wall is directly pushed to move by the planar magnetic field.
Example five a device with SOT effect similar to the one of example one, except that the ferromagnetic layers are in-plane polarized, as shown in fig. 6, operates in a similar manner to the example, except that the external magnetic field is applied as a perpendicular ferromagnetic layer, and the device is arrayed to produce a reconfigurable PUF.
Sixth embodiment is similar to the device with SOT effect of second embodiment except that the ferromagnetic layers are in-plane polarized, as shown in fig. 7, and the operation is similar to second embodiment except that the set-reset magnetic field pulse is applied parallel to the magnetization direction of the ferromagnetic layers, and the devices are arranged into an array to prepare a reconfigurable PUF.
Example seven is similar to the device structure with SOT effect of example three, except that the ferromagnetic layers are in-plane polarized, as shown in fig. 8, and the operation is similar to example three, except that the applied external magnetic field is a perpendicular ferromagnetic layer, and the devices are arrayed to produce a reconfigurable PUF.
Example eight is similar to the device with SOT effect of example four, except that the ferromagnetic layers are in-plane polarized, as shown in fig. 9, and the operation is similar to example four, except that the set-reset magnetic field pulse is applied parallel to the magnetization direction of the ferromagnetic layers, and the devices are arranged into an array to prepare a reconfigurable PUF.
All the devices are nonvolatile devices, so after one-time current writing operation, device information can be retained for a long time, only small current is needed to read data, and the device is higher in stability and small in error rate. Under special conditions, all the code units can be reset by using a writing current or an external magnetic field, and the device has high safety because the state of the device is randomly selected every time the device is operated. In addition, the device designed by the invention has small size and simple circuit, and can be integrated on a large scale.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (6)
1. A reconfigurable PUF construction method based on random magnetic domain wall movement is characterized by comprising the following steps:
s1, introducing a reset current pulse to a first pair of bottom electrodes of each nonvolatile device in the devices with the SOT effect, and simultaneously adding an external magnetic field with the magnetic field strength larger than the DM interaction equivalent field to ensure that the magnetic domain magnetization directions of the ferromagnetic layers in each nonvolatile device are the same;
s2, keeping the magnetic field unchanged, and introducing a set current pulse with the direction opposite to that of the reset current pulse into a first pair of bottom electrodes of each nonvolatile device to enable the magnetic domain wall of each nonvolatile device to move randomly;
s3, introducing a test current to the first pair of bottom electrodes of each nonvolatile device, and reading the abnormal Hall resistance of each nonvolatile device;
s4, converting abnormal Hall resistors of all nonvolatile device arrays forming the device with the SOT effect into binary ciphers, and accordingly realizing the reconfigurable PUF;
the device with the SOT effect is composed of a plurality of nonvolatile device arrays, the nonvolatile device has a multilayer film structure and sequentially comprises the following components from bottom to top: a spin-current generation layer made of a heavy metal material or a topological insulator; a ferromagnetic layer made of a ferromagnetic material; an insulating layer made of an insulating material; a cap layer made of a heavy metal material; the first pair of bottom electrodes and the second pair of bottom electrodes are orthogonal to each other, the first pair of bottom electrodes are positioned at two opposite ends of the spin current generation layer, and the second pair of bottom electrodes are positioned at two other opposite ends of the spin current generation layer;
when the easy axis direction of the magnetic moment of the ferromagnetic layer is the vertical direction, the direction of the external magnetic field is opposite to the direction of the reset current pulse, when the easy axis direction of the magnetic moment of the ferromagnetic layer is the horizontal direction, the direction of the external magnetic field is vertical upward, the reset current pulse path and the set current pulse path which are introduced into the spin current generation layer need to be guaranteed to be parallel to the ferromagnetic layer and be straight lines, and the amplitude and the width of the set current pulse are both smaller than the reset current pulse.
2. A reconfigurable PUF construction method based on random magnetic domain wall movement is characterized by comprising the following steps:
s1, applying a reset magnetic field pulse parallel to the easy axis direction of the magnetic moment of the ferromagnetic layer on a device based on an SOT effect, wherein the magnetic field intensity of the reset magnetic field pulse is greater than the coercive force of the ferromagnetic layer, so that the magnetization direction of the ferromagnetic layer of each nonvolatile device is the same as the reset magnetic field pulse direction;
s2, applying a set magnetic field pulse opposite to the reset magnetic field pulse direction on the device based on the SOT effect, wherein the magnetic field intensity is greater than the coercive force of the ferromagnetic layer, and the width is smaller than the reset magnetic field pulse, so that the magnetic domain wall of each nonvolatile device in the device based on the SOT effect generates random movement;
s3, introducing a test current to the first pair of bottom electrodes of each nonvolatile device, and reading the abnormal Hall resistance value of each nonvolatile device;
s4, converting abnormal Hall resistors of all nonvolatile device arrays forming the device with the SOT effect into binary ciphers, and accordingly realizing the reconfigurable PUF;
the device with the SOT effect is composed of a plurality of nonvolatile device arrays, the nonvolatile device has a multilayer film structure and sequentially comprises the following components from bottom to top: a spin-current generation layer made of a heavy metal material or a topological insulator; a ferromagnetic layer made of a ferromagnetic material; an insulating layer made of an insulating material; a cap layer made of a heavy metal material; the first pair of bottom electrodes and the second pair of bottom electrodes are orthogonal to each other, the first pair of bottom electrodes are located at two opposite ends of the spin current generation layer, and the second pair of bottom electrodes are located at the other two opposite ends of the spin current generation layer.
3. A reconfigurable PUF construction method based on random magnetic domain wall movement is characterized by comprising the following steps:
s1, introducing reset current pulses to two bottom electrodes of each nonvolatile device in the device with the SOT effect, and simultaneously adding an external magnetic field with the magnetic field strength larger than the DM interaction equivalent field to ensure that the magnetic domain magnetization directions of first ferromagnetic layers in each nonvolatile device are the same;
s2, keeping the magnetic field unchanged, and introducing a set current pulse with the direction opposite to that of the reset current pulse into two bottom electrodes of each nonvolatile device to enable the magnetic domain wall of each nonvolatile device to move randomly;
s3, introducing test current to any bottom electrode and any upper electrode of each nonvolatile device, and reading the resistance value of each nonvolatile device;
s4, converting the resistance of each nonvolatile device array forming the device with the SOT effect into a binary password, thereby realizing the reconfigurable PUF;
the device with the SOT effect is composed of a plurality of nonvolatile device arrays, and the nonvolatile device has a multilayer film structure and sequentially comprises the following components from bottom to top: a spin-flow generating layer made of a heavy metal material or a topological insulator, a first ferromagnetic layer made of a ferromagnetic material, a nonmagnetic layer made of an insulating material or a nonmagnetic metal material, a pinned second ferromagnetic layer made of a ferromagnetic material, a pinning layer made of an antiferromagnetic material, a cap layer made of a heavy metal material, and an upper electrode made of a conductive material, the first ferromagnetic layer and the second ferromagnetic layer having the same magnetic moment in the easy axis direction, the first bottom electrode and the second bottom electrode being located at opposite ends of the spin-flow generating layer;
when the easy axis direction of the magnetic moment of the first ferromagnetic layer is a vertical direction, the direction of an external magnetic field is opposite to the direction of a reset current pulse, when the easy axis direction of the magnetic moment of the first ferromagnetic layer is a vertical direction, the direction of the external magnetic field is vertical upwards, a reset current pulse path and a set current pulse path which are introduced into the spin current generation layer need to be parallel to the ferromagnetic layer and are straight lines, and the amplitude and the width of the set current pulse are smaller than those of the reset current pulse.
4. A reconfigurable PUF construction method based on random magnetic domain wall movement is characterized by comprising the following steps:
s1, applying a reset magnetic field pulse parallel to the easy axis direction of the magnetic moment of a first ferromagnetic layer on a device based on an SOT effect, wherein the magnetic field intensity of the reset magnetic field pulse is greater than the coercive force of the ferromagnetic layer, so that the magnetization direction of the ferromagnetic layer of each nonvolatile device is the same as the reset magnetic field pulse direction;
s2, applying a set magnetic field pulse opposite to the reset magnetic field pulse direction on the device based on the SOT effect, wherein the magnetic field intensity is greater than the coercive force of the ferromagnetic layer, and the width is smaller than the reset magnetic field pulse, so that the magnetic domain wall of each nonvolatile device in the device based on the SOT effect generates random movement;
s3, introducing test current to any bottom electrode and any upper electrode of each nonvolatile device, and reading the resistance value of each nonvolatile device;
s4, converting the resistance of each nonvolatile device array forming the device with the SOT effect into a binary password, thereby realizing the reconfigurable PUF;
the device with the SOT effect is composed of a plurality of nonvolatile device arrays, and the nonvolatile device has a multilayer film structure and sequentially comprises the following components from bottom to top: a spin-flow generating layer made of a heavy metal material or a topological insulator, a first ferromagnetic layer made of a ferromagnetic material, a nonmagnetic layer made of an insulating material or a nonmagnetic metal material, a pinned second ferromagnetic layer made of a ferromagnetic material, a pinning layer made of an antiferromagnetic material, a cap layer made of a heavy metal material, and an upper electrode made of a conductive material, the first ferromagnetic layer and the second ferromagnetic layer having the same magnetic moment in the direction of the easy axis, the first bottom electrode and the second bottom electrode being located at opposite ends of the spin-flow generating layer.
5. The method of claim 3 or 4, wherein when the nonmagnetic layer is made of an insulating material for electron tunneling, the first ferromagnetic layer, the nonmagnetic layer, and the pinned second ferromagnetic layer constitute an MTJ structure, and a resistance value of the nonvolatile device is read according to TMR effect and ohm's law; when the nonmagnetic layer is made of a nonmagnetic metal material, the first ferromagnetic layer, the nonmagnetic layer, and the pinned second ferromagnetic layer constitute a spin valve structure, and the resistance value of the nonvolatile device is read according to the GMR effect and ohm's law.
6. A computer-readable storage medium, wherein a computer program is stored on the computer-readable storage medium, and when executed by a processor, the computer program implements the reconfigurable PUF construction method based on stochastic domain wall movement according to any one of claims 1 to 5.
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