CN108321292A - Physics of Magnetism unclonable function device and Physics of Magnetism unclonable function device - Google Patents
Physics of Magnetism unclonable function device and Physics of Magnetism unclonable function device Download PDFInfo
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- CN108321292A CN108321292A CN201810239799.8A CN201810239799A CN108321292A CN 108321292 A CN108321292 A CN 108321292A CN 201810239799 A CN201810239799 A CN 201810239799A CN 108321292 A CN108321292 A CN 108321292A
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- 230000005389 magnetism Effects 0.000 title claims abstract description 58
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910001385 heavy metal Inorganic materials 0.000 claims abstract description 23
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052796 boron Inorganic materials 0.000 claims abstract description 21
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000012528 membrane Substances 0.000 claims abstract description 19
- 238000009826 distribution Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000470 constituent Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 102
- 239000010408 film Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 10
- 229910019236 CoFeB Inorganic materials 0.000 description 9
- 230000004044 response Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 4
- 230000003993 interaction Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910017629 Sb2Te3 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 229930183419 Irisone Natural products 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 241000904014 Pappus Species 0.000 description 1
- UZFLPKAIBPNNCA-BQYQJAHWSA-N alpha-ionone Chemical compound CC(=O)\C=C\C1C(C)=CCCC1(C)C UZFLPKAIBPNNCA-BQYQJAHWSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
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- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
The present invention discloses a kind of Physics of Magnetism unclonable function device and device.Device includes：Substrate, the heavy metal layer set on substrate top surface, the Physics of Magnetism unclonable function layer set on heavy metal layer upper surface, Physics of Magnetism unclonable function layer include：Pinning layer set on heavy metal layer upper surface, the tunnel layer set on pinning layer upper surface and the free layer set on tunnel layer upper surface；Alternatively, Physics of Magnetism unclonable function layer includes：Free layer set on heavy metal layer upper surface, the tunnel layer set on free layer upper surface and the pinning layer set on tunnel layer upper surface；Free layer specifically includes ferro-cobalt boron membrane layer and the magnesia film layer set on ferro-cobalt boron membrane layer upper surface.The physics unclonable function device and device that the present invention is prepared using the anisotropy feature of ferro-cobalt boron membrane and magnesia film interface have the characteristics that randomness and uniqueness, have unique unclonable and anti-tamper attribute.
Description
Technical field
The present invention relates to information security hardware-based cryptographic fields, more particularly to a kind of Physics of Magnetism unclonable function
Device and Physics of Magnetism unclonable function device.
Background technology
Protected for the intellectual property (IP) of hardware view, and prevent the information leakage of software view, it is such as pirate and
Invasion of privacy and property safety, people have invented a kind of physics unclonable function (Physical Unclonable
Functions, PUF) these information are protected.Earliest physics unclonable function is one kind of the propositions such as Pappu
Then optical physics unclonable function is carried by the generation speckle of laser irradiation glass by Jia Bo Hash (Gaborhash)
Take the characteristic of speckle.Optical physics unclonable function has good randomness and uniqueness, but its physique is complicated,
Laser direction sensitivity requirement is extremely harsh, these deficiencies significantly limit its practical application.In the near future, Gassend
Et al. propose silicon physics unclonable function concept, this physics unclonable function structure utilize integrated circuit in gate circuit
Or physics unclonable function structure is realized in the delay of line.But si-substrate integrated circuit can be by measuring product
Its information is stolen or distorted to pin power consumption, clock response and electromagnetic signature.
Invention content
The object of the present invention is to provide a kind of Physics of Magnetism unclonable function device and Physics of Magnetism unclonable functions
Device has good uniqueness and randomness, has the anti-tamper ability of anti-counterfeiting, can solve traditional non-electrical physics
Unclonable function is difficult to practical application and electricity physics unclonable function has risk of divulging a secret.
To achieve the above object, the present invention provides following schemes：
A kind of Physics of Magnetism unclonable function device, the device include：Substrate, set on the weight of the substrate top surface
Metal layer, the Physics of Magnetism unclonable function layer set on the heavy metal layer upper surface, wherein
The Physics of Magnetism unclonable function layer specifically includes：Set on the heavy metal layer upper surface pinning layer, set
In the tunnel layer of the pinning layer upper surface and free layer set on the tunnel layer upper surface；Alternatively, the Physics of Magnetism is not
Function layer can be cloned to specifically include：Free layer set on the heavy metal layer upper surface, the tunnel set on the free layer upper surface
Wear layer and the pinning layer set on the tunnel layer upper surface；
The free layer specifically includes ferro-cobalt boron membrane layer and magnesia set on the ferro-cobalt boron membrane layer upper surface is thin
Film layer.
Optionally, the magnesia film layer is in uneven thickness.
Optionally, the thickness random distribution of the magnesia film layer constituent parts area.
Optionally, the substrate is silicon substrate or silicon dioxide substrates.
Optionally, the pinning layer is ferro-cobalt boron membrane.
Optionally, the tunnel layer is magnesia film.
A kind of Physics of Magnetism unclonable function device, described device include several unclonable letters of Physics of Magnetism
Number device, wherein each Physics of Magnetism unclonable function device is arranged in array.
According to specific embodiment provided by the invention, the invention discloses following technique effects：
Physics of Magnetism unclonable function device and device provided by the invention, free layer be provided with ferro-cobalt boron membrane layer and
Magnesia film layer set on ferro-cobalt boron membrane layer upper surface.Utilize each to different of ferro-cobalt boron membrane and magnesia film interface
Property the characteristics of, by change different location anisotropy prepare the physics unclonable function device based on magnetic anisotropy
Part.Process due to generating Physics of Magnetism unclonable function device has randomness, the device of generation has randomness
And the characteristics of uniqueness, have unique unclonable and anti-tamper attribute.Further, due to the present invention utilize be generate
The randomness of device process, and device architecture is simple, processing technology belongs to common process, convenient for promoting the use of.
Description of the drawings
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the present invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the Physics of Magnetism unclonable function device that the embodiment of the present invention 1 provides；
Fig. 2 is the Physics of Magnetism unclonable function device that the embodiment of the present invention 2 provides；
Fig. 3 is the membrane structure schematic diagram provided in an embodiment of the present invention for preparing PUF devices；
Fig. 4 is Hall Bar structural schematic diagrams provided in an embodiment of the present invention；
Fig. 5 is magnetic block structural schematic diagram provided in an embodiment of the present invention；
Fig. 6 is free layer structure schematic diagram provided in an embodiment of the present invention；
Fig. 7 is the single cipher generator provided by the invention based on PUF devices；
Fig. 8 is more password generators provided by the invention based on PUF devices.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of Physics of Magnetism unclonable function device and Physics of Magnetism unclonable functions
Device has good uniqueness and randomness, using the architectural characteristic of magnetic device, in preparation process the magnetic of device respectively to
The opposite sex can occur to change at random, and this random variation can generate key, have the anti-tamper ability of anti-counterfeiting, can solve to pass
The non-electrical physics unclonable function of system is difficult to practical application and electricity physics unclonable function has asking for risk of divulging a secret
Topic can be used in information encryption and hardware field of encryption.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
Embodiment 1：
Fig. 1 is the first Physics of Magnetism unclonable function device provided in an embodiment of the present invention.As shown in Figure 1, a kind of
Physics of Magnetism unclonable function device, the device include：Substrate 1, set on 1 upper surface of the substrate heavy metal layer 2, set
Physics of Magnetism unclonable function layer in 2 upper surface of the heavy metal layer, in the present embodiment, the Physics of Magnetism is unclonable
Function layer specifically includes：Pinning layer 3 set on 2 upper surface of the heavy metal layer, the tunnel layer set on 3 upper surface of the pinning layer
4 and the free layer 5 set on 4 upper surface of the tunnel layer；Wherein,
The free layer 5 includes set on the ferro-cobalt boron membrane layer 51 of 4 upper surface of the tunnel layer and set on the ferro-cobalt boron
The magnesia film layer 52 of 51 upper surface of film layer.
Preferably, the magnesia film layer 52 is in uneven thickness, and 52 constituent parts area of the magnesia film layer
Thickness random distribution.
In the present embodiment, the substrate 1 is silicon substrate or silicon dioxide substrates.The pinning layer 3 is ferro-cobalt boron membrane.
The tunnel layer 4 is magnesia film.
Embodiment 2：
Fig. 2 is second of Physics of Magnetism unclonable function device provided in an embodiment of the present invention.As shown in Fig. 2, a kind of
Physics of Magnetism unclonable function device, the device include：Substrate 1, set on 1 upper surface of the substrate heavy metal layer 2, set
Physics of Magnetism unclonable function layer in 2 upper surface of the heavy metal layer, in the present embodiment, the Physics of Magnetism is unclonable
Function layer specifically includes：Free layer 5 set on 2 upper surface of the heavy metal layer, the tunnel layer set on 5 upper surface of the free layer
4 and the pinning layer 3 set on 4 upper surface of the tunnel layer, device provided in this embodiment further includes being set to the huge sum of money pricked in pinned layers 3
Belong to protective layer 6；Wherein,
The free layer 5 includes set on the ferro-cobalt boron membrane layer 51 of 2 upper surface of the heavy metal layer and set on the ferro-cobalt
The magnesia film layer 52 of 51 upper surface of boron membrane layer.
Preferably, the magnesia film layer 52 is in uneven thickness, and 52 constituent parts area of the magnesia film layer
Thickness random distribution.
In the present embodiment, the substrate 1 is silicon substrate or silicon dioxide substrates.The pinning layer 3 is ferro-cobalt boron membrane.
The tunnel layer 4 is magnesia film.
Physics unclonable function provided by the invention based on magnetic material, due to shape anisotropy, CoFeB films
Intra-face anisotropy generally is showed, Interface Anisotropy or exchange interaction can be introduced on CoFeB films, works as interface
When the uniaxial anisotropy for the vertical direction that effect or exchange interaction introduce can be more than the demagnetization energy of film, CoFeB films
Perpendicular magnetic anisotropic is showed, this uniaxial anisotropy can derive from CoFeB-MgO Interface Anisotropies or Co-Pt is handed over
Change the means of the exchange interaction of spring and the uniaxial anisotropy of other vertical direction that can be introduced.Pass through change
The anisotropy of different location can prepare the physics unclonable function based on magnetic anisotropy.
The present invention prepares Physics of Magnetism unclonable function using CoFeB-MgO Interface Anisotropies.When in CoFeB films
When the MgO of one layer of suitable thickness of upper covering, CoFeB/MgO systems will present out perpendicular magnetic anisotropy.CoFeB/MgO is vertical each
Anisotropy, upper layer MgO can be thinned using ion beam etching, in ion beam etching of Fresnel, due to ion beam
Energy distribution, angular distribution small random irregularity can so that when MgO is thinned, etch rate is uneven
It is even, cause the Interface Anisotropy of CoFeB/MgO systems to change, and be uniformly random distribution in the devices.In addition, also
MgO thickness distributions can be made also to have inhomogeneities to obtain difference when growing MgO film by the inhomogeneities of growth
Interface Anisotropy.
The preparation process of Physics of Magnetism unclonable function device free layer provided by the invention and the test to PUF devices
Flow is as follows：
(1) preparation of free layer
Fig. 3 is the membrane structure schematic diagram for preparing PUF devices.The basic cell structure of magnetic PUF is Hall item
(HallBar), as shown in figure 3, the film for being used to prepare device is prepared by magnetron sputtering, including substrate 21, heavy metal layer 22,
CoFeB-MgO systems 23 and protective layer 24 form.Wherein, substrate 21 is Si substrates or SiO2Substrate, heavy metal layer 22 can
To select metal tantalum (Ta), platinum (Pt), titanium (Ti), tungsten (W) or other materials with larger spin Hall angle, such as
Bi2Se3, Sb2Te3 etc., the heavy metal layer 22 that the present embodiment is selected are metal tantalum (Ta).CoFeB-MgO systems 23 are magnetosphere
Ferro-cobalt boron/magnesia (CoFeB/MgO), CoFeB-MgO systems 23 specifically include ferro-cobalt boron CoFeB film layers 231 and and oxidation
Magnesium MgO film layer 232, protective layer 24 can select metal tantalum (Ta), platinum (Pt), titanium (Ti), tungsten (W) or other with larger
The material of spin Hall angle, such as Bi2Se3, Sb2Te3, the protective layer 24 that the present embodiment is selected are metal tantalum (Ta).
First, to film layer shown in Fig. 3 carry out first time photoetching, recycle ion beam etching by film preparation at
The Hall Bar structures of HallBar structures, acquisition are that four end structures are as shown in Figure 4.Etching only etches into substrate for the first time
, i.e., lower layer heavy metal layer Ta has been etched, the shape of magnetic block can be other shapes, such as round, polygon or
Other arbitrary shapes.At this moment all magnet units are all perpendicular magnetic anisotropics
Second of photoetching is carried out, and a magnetic block is etched in the cross section of HallBar using ion beam etching.
As shown in figure 5, magnetic block includes protective layer metal tantalum, magnesium oxide layer, ferro-cobalt boron layer successively from top to bottom.Portion other than magnetic block
Divide and etches into heavy metal layer, the influence to avoid peripheral part to magnetic block.
Third time photoetching is carried out, using the MgO of ion beam etching top device, is generated by MgO thickness changes random
The magnetic anisotropy of distribution obtains the free layer structure of device.Fig. 6 is the free layer structure after third time etches, at this moment, on
The protective layer metal tantalum (Ta) of layer, which is etched, to be over, and due to the inhomogeneities of etching, the thickness of MgO film layer constituent parts area is not
Together, the magnetic anisotropy of different free layers is also different.Some is in intra-face anisotropy, the perpendicular anisotropy having.
(2) PUF device detections
By said multi-step etch step, the PUF units of the magnetic moment random distribution for the layer that can gain freedom lead to device
The resistance of magnetic tunnel section (MTJ) also can random distribution.
The basic functional principle of magnetic tunnel section, the transport process in magnetic moments parallel are：Free layer (Free
Layer the electronics in) in most spin subbands will extend over potential barrier enter it is most from copper plate in pinning layer (Fixed Layer)
Band, and the electronics in a small number of spin subbands will enter a small number of subbands in pinning layer (Fixed Layer), MTJ is in high-impedance state.
It is in the antiparallel transport process of magnetic moment：Electronics in free layer (Free layer) in most spin subbands will extend over
Potential barrier enters a small number of spin subbands in pinning layer (Fixed Layer), and the electronics in a small number of spin subbands will enter nail
Most spin subbands in layer (Fixed Layer) are pricked, MTJ is in low resistance state.It can be by extracting in the unclonable letter of Physics of Magnetism
Random equally distributed different high low resistance state indicates its output in number devices.
The present embodiment measures the Hall resistance of Physics of Magnetism unclonable function device, Ke Yitong using extraordinary Hall effect
Measurement device is crossed under zero magnetic field, remanent magnetism after vertical both direction saturated magnetization judges the state of a PUF device.This
Embodiment selects in piece that Hamming distance weighs the performance of device between Hamming distance and piece.
So-called interior Hamming distance refers to the same PUF devices to the same sharp difference for encouraging response for being repeated twice input
It is different.Hamming distance refers to inputting two difference PUF entities the difference of the response after identical excitation between piece.
Since the uniqueness of PUF can cause two different PUF entities to generate different responses, it is generally the case that one
The exact value of PUF responses is inevitably influenced by the uncertain and many external factor of noise, measurement accuracy.One
Hamming distance is close to 0.5 between the piece of good PUF devices, and Hamming distance can ensure Physics of Magnetism in this way close to 0 in piece
The uniqueness and randomness of unclonable function device therefore can be by adjusting the ginseng in etching process in actual application
It counts to optimize the performance of PUF devices.
Physics unclonable function based on magnetic anisotropy be of wide application it is general, such as the fingerprint and iris one of people
Sample, PUF devices just have uniqueness, and the process generated has randomness once generating.Randomness based on device and only
The application of one property, physics unclonable function generally comprises IP protections, system authentication and key generation etc..In these application environments
In, physics unclonable function mainly has certification, random oracle and key generator.
Certification, when physics unclonable function device preparation after the completion of, it be just provided with one it is unique unclonable, anti-
The attribute distorted is a kind of very safely and effectively anti-counterfeiting technology, its basic principle using physics unclonable function certification
It is such：Physics unclonable function device is embedded into physical system, then some by unclonable function are challenged
Response is deposited into database CRP, is provided to current system to encourage physics unclonable function, if it is observed that object
The response of reason unclonable function is sufficiently close to the response in several libraries, then certification is successfully, otherwise authentification failure.In the present invention
In, we can extract the resistance characteristic of PUF units to form CRP, in verification process, provide different modes to export
The resistance of physics unclonable function device is authenticated.
Random oracle, random oracle refers to a deterministic public addressable random uniformly distributed function, right
In the input of random length, the uniform response for selecting the value of a determining length as inquiry in the output.
Key generator, the key based on physics unclonable function generate before security fields have and are widely applied very much
Scape, we can be with the information of extracts physical unclonable function, i.e., the resistance value of MTJ, is turned by subsequent processing, such as AD in the present invention
It changes, Physics of Magnetism unclonable function can be converted to a reinforcement key so that encryption technology is safer.
Fig. 7 is the single cipher generator provided by the invention based on PUF devices.As shown in fig. 7, by the embodiment of the present invention 1
Or 8 Physics of Magnetism unclonable function devices that embodiment 2 provides are integrated together, each device is arranged in array.If
One unit generates 8 passwords, then a device can generate 64 passwords.
Fig. 8 is more password generators provided by the invention based on PUF devices.A small rectangle represents a PUF in Fig. 8
Multiple PUF devices can be integrated on a slice, thin piece in practical applications, different devices is selected by control selections end by device
Part can obtain different password combinations.
Due to the randomness and uniqueness of physics unclonable function, using Physics of Magnetism unclonable function, there are two sides
The advantage in face：
(1) physics unclonable function device made of the characteristic due to applied magnetic material, structure is not same to be passed through
The silicon physics unclonable function that delay is realized equally is linear, and nonlinear physics unclonable function is difficult to pass through emulation
It is distorted to crack.Therefore, Physics of Magnetism unclonable function provides the key of safety and reliability a kind of and generates and storage mode.
(2) Physics of Magnetism unclonable function is non-volatile, and one piece of Physics of Magnetism unclonable function is embedded into separately
In an outer physical system so that whole system has anti-tamper and clone attribute.
(3) since electromagnetic radiation is not present in Physics of Magnetism unclonable function device, and have in theory unlimited
The possibility used, service life is long, especially suitable for aerospace field.
Each embodiment is described by the way of progressive in this specification, the highlights of each of the examples are with other
The difference of embodiment, just to refer each other for identical similar portion between each embodiment.
Principle and implementation of the present invention are described for specific case used herein, and above example is said
The bright method and its core concept for being merely used to help understand the present invention；Meanwhile for those of ordinary skill in the art, foundation
The thought of the present invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
Claims (7)
1. a kind of Physics of Magnetism unclonable function device, which is characterized in that the device includes：Substrate is set to the substrate
The heavy metal layer of upper surface, the Physics of Magnetism unclonable function layer set on the heavy metal layer upper surface, wherein
The Physics of Magnetism unclonable function layer specifically includes：Set on the pinning layer of the heavy metal layer upper surface, set on institute
State the tunnel layer of pinning layer upper surface and the free layer set on the tunnel layer upper surface；Alternatively, the Physics of Magnetism can not gram
Grand function layer specifically includes：Free layer set on the heavy metal layer upper surface, the tunnel layer set on the free layer upper surface
And the pinning layer set on the tunnel layer upper surface；
The free layer specifically includes ferro-cobalt boron membrane layer and the magnesia film layer set on the ferro-cobalt boron membrane layer upper surface.
2. Physics of Magnetism unclonable function device according to claim 1, which is characterized in that the magnesia film layer
It is in uneven thickness.
3. Physics of Magnetism unclonable function device according to claim 2, which is characterized in that the magnesia film layer
The thickness random distribution of constituent parts area.
4. Physics of Magnetism unclonable function device according to claim 1, which is characterized in that the substrate is silicon substrate
Or silicon dioxide substrates.
5. Physics of Magnetism unclonable function device according to claim 1, which is characterized in that the pinning layer is ferro-cobalt
Boron membrane.
6. Physics of Magnetism unclonable function device according to claim 1, which is characterized in that the tunnel layer is oxidation
Magnesium film.
7. a kind of Physics of Magnetism unclonable function device, which is characterized in that described device includes several claim 1-6 any
Physics of Magnetism unclonable function device described in, wherein each Physics of Magnetism unclonable function device is arranged in array
Cloth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810239799.8A CN108321292B (en) | 2018-03-22 | 2018-03-22 | Magnetic physical unclonable function device and magnetic physical unclonable function device |
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| CN110752287B (en) * | 2019-09-29 | 2021-04-20 | 华中科技大学 | Reconfigurable PUF (physical unclonable function) construction method based on random magnetic domain wall movement |
| US11538985B2 (en) | 2019-09-29 | 2022-12-27 | Huazhong University Of Science And Technology | Method for configuring reconfigurable physical unclonable function based on device with spin-orbit torque effect |
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