CN105977375A - MnGa-base vertical magnetic tunnel junction taking Heusler alloy as intercalation, and preparation method - Google Patents
MnGa-base vertical magnetic tunnel junction taking Heusler alloy as intercalation, and preparation method Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 79
- 230000002687 intercalation Effects 0.000 title claims abstract description 61
- 238000009830 intercalation Methods 0.000 title claims abstract description 61
- 229910001291 heusler alloy Inorganic materials 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000004888 barrier function Effects 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 22
- 229910017028 MnSi Inorganic materials 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 13
- 239000010408 film Substances 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 9
- 229910003396 Co2FeSi Inorganic materials 0.000 claims description 7
- 229910016583 MnAl Inorganic materials 0.000 claims description 7
- 229910015372 FeAl Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
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- 230000005294 ferromagnetic effect Effects 0.000 description 4
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- 229910005335 FePt Inorganic materials 0.000 description 1
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Abstract
The invention discloses an MnGa-base vertical magnetic tunnel junction taking a Heusler alloy as an intercalation. The MnGa-base vertical magnetic tunnel junction comprises a substrate which is the base for realizing epitaxial growth of a multilayer film; a buffer layer which is manufactured on the substrate and is used for smoothing the surface of the substrate and reducing crystal lattice mismatch; a lower electrode which is manufactured on the buffer layer and grows in an epitaxial mode; a lower intercalation which is manufactured on the lower electrode and grows in an epitaxial mode; a barrier layer which is manufactured on the lower intercalation; an upper intercalation which is manufactured on the barrier layer and grows in an epitaxial mode; an upper electrode which is manufactured on the upper interaction and grows in an epitaxial mode; and a coverage layer which is manufactured on the upper electrode and protects a lower-layer structure. The MnGa-base vertical magnetic tunnel junction has a quite high tunneling magnetoresistance effect.
Description
Technical field
The present invention relates to spintronics material and the reluctance type with magnetic tunnel-junction as core stores at random
Device field, is specifically related to MnGa base perpendicular magnetic tunnel knot and system that a kind of Heusler alloy is intercalation
Preparation Method.
Technical background
The development of magnetic storage apparatus achieves high density mass data storage and miniaturization
Electronic devices and components, the daily life for us brings great convenience.But, everything all with from
The research of rotation electronics material and related device is closely bound up.Magnetic random access memory (MRAM)
Core component is MTJ, and it is generally by feeromagnetic metal electrode/insulator potential barrier/feeromagnetic metal electricity
Pole sandwich structure composition.The relative orientation of two ferromagnetic electrode magnetic moments can be regulated by extraneous control
(arranged in parallel or arranged anti-parallel), makes electronics from a lateral electrode to the tunnelling probability of opposite side electrode
Change, so that tunnel knot presents high and low two kinds of different resistance states.MTJ is just
It is the change utilizing this regulatable tunnel magneto effect (TMR) to realize signal low and high level,
Write with this and read data.
In order to improve device performance, researchers have paid substantial amounts of effort to optimize magnetic tunnel
The structure of knot, have also discovered many new problems while making progress and is further improved:
On the one hand, along with the raising of memory density, the spacing of adjacent magnetic memory cell constantly reduces, and deposits
Magnetic coupling between storage unit can produce interference to the storage of information, makes the stability of device decline.In
It is, it is thought that utilize Magnetized Material conduct in the electrode material replacement face with vertical easy magnetization characteristic
Memory element.Vertical easy magnetization electrode material is used to be not only able to avoid adjacent storage single to the full extent
Magnetic coupling between unit, and energy consumption, the heat stability of raising components and parts needed for upset magnetic moment can be reduced,
The VHD being conducive to memory element is integrated.Present stage association area research comparative maturity be with
CoFeB/MgO/CoFeB structure is the interface induced magnetic anisotropy tunnel knot of representative, this class formation
Feature is only to keep perpendicular magnetic anisotropic in the case of CoFeB thin film is the thinnest, and CoFeB
The magnetic damping factor of material increases sharply with the reduction of film thickness, and system is for cushion kind
And the prescription of interface is the highest, give the large-scale application band of related device to a certain extent
It is inconvenient to come.A solution for this problem is to use self to have bigger perpendicular magnetic anisotropic
(PMA) electrode material realizes vertical easy magnetization, and not relies on the inducing action at interface.?
Researcher is had to attempt utilizing the MnGa with high perpendicular magnetic anisotropic to carry out as electrode material
The preparation work of MnGa/MgO/CoFe system MTJ, but be currently only capable of seeing at low temperatures
Measure less tunnel magneto rate of change.
On the other hand, it has been found that ferromagnetic electrode and insulator barrier interface are carried out to the life of intercalation
Length is a very important job.Reason is suitable intercalation material except playing the ferromagnetic electricity of buffering
Outside lattice mismatch effect between pole and insulator potential barrier, additionally it is possible to avoid between electrode material and potential barrier
Counterdiffusion and interface oxidation problem, improve the interface quality that multilamellar is intermembranous.Moreover, if can look for
To a kind of suitably high spinning polarizability material as intercalation, it is also possible to change electrode and barrier layer interface
Electronic state character, thus improve the tunnel magneto rate of change of tunnel knot further.The most relevant
In at D022-MnGa/MgO/CoFe and L10-MnGa/MgO/CoFe system introduces Mg, Fe etc. insert
The relevant report of layer material, research shows that the introducing of intercalation material can improve electrode and MgO gesture really
Interface quality between base.But, the highest TMR that above-mentioned system can reach and practical device institute
The demand proposed also has certain gap.As can be seen here, searching and optimization for suitable intercalation material are
One work highly significant.
Summary of the invention
It is intercalation that the technical problem that present invention mainly solves there is provided a kind of Heusler alloy
MnGa base perpendicular magnetic tunnel knot and preparation method.The present invention is by L10-MnGa electrode closes with Heusler
The double membrane structure of gold intercalation composition is implanted in the middle of the design of MTJ, utilizes electrode and intercalation
Between anti-ferromagnetic coupling interaction realize the controlled upset of intercalation magnetic moment, and L1 can be made0The height of-MnGa
The semimetal characteristic of perpendicular magnetic anisotropic and Heusler alloy is taken into account.Therefore, described magnetic tunnel
Road junction device is while ensureing to have vertical easy magnetization characteristic, moreover it is possible to have higher tunneling magnetic resistance
Effect.
The MnGa base perpendicular magnetic tunnel knot that the present invention provides a kind of Heusler alloy to be intercalation, including:
One substrate, is to realize the epitaxially grown basis of multilayer film；
One cushion, its epitaxial growth is on substrate, for smooth substrate surfaces and reduce lattice mismatch
Degree；
One bottom electrode, its epitaxial growth is on the buffer layer；
Intercalation once, its epitaxial growth is on the bottom electrode；
One barrier layer, its epitaxial growth is on lower intercalation, and thickness is 0.8-2nm；
Intercalation on one, its epitaxial growth is on barrier layer；
Electrode on one, its epitaxial growth is on upper intercalation；
One cover layer, understructure, on upper electrode, is shielded by its epitaxial growth.
The present invention also provides for the system of the MnGa base perpendicular magnetic tunnel knot that a kind of Heusler alloy is intercalation
Preparation Method, comprises the following steps:
Step 1: take a substrate；
Step 2: be sequentially prepared on substrate cushion, bottom electrode, lower intercalation, barrier layer, on insert
Layer, upper electrode and cover layer；
Step 3: vacuum magnetic field makes annealing treatment, completes preparation.
Comparing prior art, advantages of the present invention is as follows:
L10-MnGa perpendicular magnetic anisotropic is strong, saturation magnetic moment is high and the magnetic damping factor is low, is well recognized as reality
The now good base material of vertical easy magnetization characteristic；And semimetal Heusler alloy (Co2MnSi、Co2MnAl、
Co2FeAl and Co2FeSi) there is the high spinning polarizability of theoretical prophesy and higher ferromagnetic Curie temperature
Degree.It addition, experiment it turned out above-mentioned semimetal Heusler alloy and L10The bilayer of-MnGa composition
There is stronger antiferromagnetic exchange coupling between membrane structure, make the magnetization side of Heusler alloy intercalation
To can be at L10Controlled upset is realized under the inducing action of-MnGa electrode.Moreover, semimetal
The lattice paprmeter of Heusler alloy is between L10Between-MnGa and non-magnetic insulator potential barrier, it is possible to
Good cushioning effect is played, to L1 between upper/lower electrode and barrier layer0The vertical easily magnetic of-MnGa system
Change MTJ especially suitable.The above advantage be normal vertical magnetization configuration (as
[Co/Pt (Pd)] n multilayer film, Pt/CoFe, FePt) and common intercalation material (such as Fe, Co, CoFe)
Not available for Deng.For above-mentioned MTJ system, we have the most at room temperature observed super
Cross the tunneling magnetic resistance signal of 5%, and this signal is with testing the reduction of temperature in increasing trend.Thus may be used
See, the present invention be promote the tunneling magnetic resistance characteristic of vertical easy magnetization MTJ provide one can
The new method of row.
Accompanying drawing explanation
For further illustrating the technology contents of the present invention, describe in detail such as below in conjunction with embodiment and accompanying drawing
After, wherein:
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the preparation flow figure of the present invention；
Fig. 3 is the hysteresis curve (M-H curve) of Fig. 1 structure vertical magnetic tunnel-junction；
Fig. 4 is the tunneling magnetic resistance rate (TMR) response curve with external magnetic field of Fig. 1 structure.
Detailed description of the invention
For more clearly illustrating the detailed description of the invention of the present invention, close below in conjunction with a kind of Heusler
Gold is illustrated for the specific embodiment of the MnGa base perpendicular magnetic tunnel knot of intercalation:
Referring to shown in Fig. 1, the MnGa base that the present invention provides a kind of Heusler alloy to be intercalation hangs down
Straight magnetic tunnel-junction, including:
One substrate 1, for GaAs (001) material of half insulation, is the extension life realizing multilayer film
Long basis；
One cushion 2, epitaxial growth on substrate 1, is closed by semimetal Heusler thick for about 4nm
Gold Co2MnSi thin film forms, for smooth substrate surfaces and buffer the crystalline substance between substrate and long Rotating fields
Lattice mismatch；
One bottom electrode 3, epitaxial growth on the buffer layer 2, by the L1 of about 20nm0-MnGa thin film group
Become；This electrode material has higher perpendicular magnetic anisotropic, high saturation magnetic moment and low damping factor,
It it is the source of vertical easy magnetization characteristic in this structure；
Intercalation 4 once, epitaxial growth on the lower electrode 3, by about 0.6-1.5nm thick have half
The Heusler alloy Co of metallic character2MnSi、Co2MnAl、Co2FeAl or Co2FeSi thin film forms.
The theoretical spin-polarized degree foretelling this kind of material is up to 100%, again because of this type of alloy and L10-MnGa
Between the duplicature of composition, there is stronger antiferromagnetic exchange coupling, therefore can be at L10-MnGa
Inducing action under embody the magnetization characteristic of vertical direction, and the magnetic moment of Heusler alloy can be with
L10-MnGa is realized controlled upset by the effect of external magnetic field together；
One barrier layer 5, epitaxial growth, on lower intercalation 4, is made up of the MgO film of thickness about 2nm,
Barrier layer is the core realizing electron tunneling effect；
Intercalation 6 on one, epitaxial growth is on barrier layer 5, by thick the having partly of about 0.6-1.5nm
The Heusler alloy Co of metallic character2MnSi、Co2MnAl、Co2FeAl or Co2FeSi thin film forms,
Its concrete effect is with lower intercalation 4.The direction of magnetization of electrode/intercalation duplicature that barrier layer is upper and lower is with outfield
Rotating, macro manifestations is the resistance height change between tunnel junctions bottom electrode, and this structure can be by the external world
Magnetic signal be converted to the signal of telecommunication of tunnel junctions, thus realize transmission and the record of information；
Electrode 7 on one, epitaxial growth is on upper intercalation 6, by the L1 of about 8-10nm0-MnGa is thin
Film forms.Lower L10Mn content in-MnGa membrane electrode component and upper L10-MnGa membrane electrode is slightly
Having difference, coercivity H difference, this design is the magnetic moment energy in order to make upper/lower electrode material
Enough rotated by external magnetic field independently；
One cover layer 8, epitaxial growth is on upper electrode 7, by the Pd metallic film of about 0.8-2nm
Composition, shields to understructure.
Referring to Fig. 2 and combine refering to shown in Fig. 1, the present invention also provides for a kind of Heusler alloy and is
The preparation method of the MnGa base perpendicular magnetic tunnel knot of intercalation, comprises the following steps:
1. taking an intrinsic semi-insulated GaAs (001) substrate 1 to put into MBE and prepare chamber, chamber is true
Reciprocal of duty cycle is 10-7Pa magnitude.After silicon degasification deoxidation, underlayer temperature is risen to 560 DEG C, heavy
Long-pending GaAs smooth layer, growth rate is about 10nm/min, and thickness is more than 300nm.Subsequently by substrate
Temperature be down to 150-250 DEG C, grow Co2MnSi cushion 2, for smooth substrate surfaces and buffer
Lattice mismatch between substrate and long Rotating fields, growth rate about 1nm/min, thickness is 3-5nm,
10min is kept to carry out in-situ annealing process, to reduce crystal defect at 150-250 DEG C；
2. keeping underlayer temperature to be 150-250 DEG C, growth has high perpendicular magnetic anisotropic
L10-MnGa lower electrode film 3, growth rate about 1nm/min, thickness is 25nm, at 150-250 DEG C
10min is kept to carry out in-situ annealing process, to reduce crystal defect；
3. keeping underlayer temperature to be 150-250 DEG C, growth has the Heusler alloy of semimetal characteristic
Co2MnSi upper intercalation thin film 4 (only chooses Co with regard to this example2MnSi intercalation, also may be used for other embodiments
Select Co2MnAl、Co2FeAl or Co2FeSi), growth rate about 1nm/min, thickness is
0.6-1.5nm, keeps 10min to carry out in-situ annealing process, to reduce crystal defect at 150-250 DEG C；
4. underlayer temperature is down to room temperature, utilizes electron beam evaporation equipment to grow MgO barrier 5, beat
Opening electron beam evaporation power supply, accelerating potential is 5kV, and emission current is 10-15mA.Use crystalline substance simultaneously
Vibration Meter in-situ monitoring MgO layer thickness, thin film deposition thickness is 0., 8-2nm, is risen to by underlayer temperature
300 DEG C keep 20min, carry out in-situ annealing process, to reduce crystal defect；
5. substrate temperature being down to 150-250 DEG C, growth has the Heusler of semimetal characteristic and closes
Gold Co2The upper intercalation of MnSi 6 (also can be selected for Co2MnAl、Co2FoAl or Co2FeSi), growth rate
About 1nm/min, thickness is 0.6-1.5nm, keeps 10min to carry out at in-situ annealing at 150-250 DEG C
Reason, to reduce crystal defect；
6. keeping underlayer temperature to be 150-250 DEG C, growth has high perpendicular magnetic anisotropic
L10-MnGa upper electrode film 7, growth rate about 1nm/min, thickness is 8-10nm, at 150-250 DEG C
10min is kept to carry out in-situ annealing process, to reduce crystal defect；
7. underlayer temperature is down to room temperature, on above-mentioned multi-layer film structure, grows one layer of Pd cover layer 8
(can also select Pt, Ta or Al), thickness is about 0.8-2nm.Owing to Pd is that chemical property is steady
Fixed precious metal material, can play surface protection effect to device；Finally giving structure is
GaAs/Co2MnSi cushion/L10-MnGa electrode/Co2MnSi intercalation/MgO barrier/Co2MnSi inserts
Layer/L10The L1 with semimetal Heusler alloy as intercalation of-MnGa electrode/P cap rock0-MnGa base hangs down
Straight easy magnetization MTJ multilayer film；
8. the L1 with semimetal Heusler alloy as intercalation of pair step 7 preparation0-MnGa base is the easiest
Magnetized magnetic tunnel knot multilayer film carries out vacuum magnetic field annealing, is allowed to performance and more optimizes.
The L1 with semimetal Heusler alloy as intercalation is given refering to Fig. 30-MnGa base vertically easy magnetic
Change the hysteresis curve (M-H curve) of MTJ, apply the direction in magnetic field and the direction in detection magnetic field
It is each perpendicular to substrate surface.The precipitous saltus step correspondence bottom electrode of low field areas magnetic moment and lower intercalation magnetic in figure
Square, with the switching process of external magnetic field, illustrates the L1 of bottom electrode0-MnGa thin film has the most vertical easily magnetic
Change characteristic；Change correspondence above electrode and upper intercalation magnetic moment the turning over external magnetic field of high field area magnetic moment in figure
Turn over journey, the L1 of electrode is described0-MnGa thin film has vertical easy magnetization characteristic equally.
The L1 with semimetal Heusler alloy as intercalation is given refering to Fig. 40-MnGa base vertically easy magnetic
Change the tunneling magnetic resistance rate (TMR) response curve with external magnetic field of MTJ, apply magnetic field
Direction is perpendicular to substrate surface.It can be seen that obvious tunneling magnetic resistance signal from figure, this knot is described
Structure has good performance.
Above example only in order to technical scheme to be described, is not intended to limit.Although reference
The present invention has been described in detail by previous embodiment, and those of ordinary skill in the art should manage
Solve: the technical scheme described in foregoing embodiments still can be modified by it, or to wherein
Portion of techniques feature carries out equivalent；And these amendments or replacement, do not make appropriate technical solution
Essence depart from various embodiments of the present invention technical scheme spirit and scope.
Claims (10)
1. Heusler alloy is a MnGa base perpendicular magnetic tunnel knot for intercalation, including:
One substrate, is to realize the epitaxially grown basis of multilayer film；
One cushion, it is produced on substrate, for smooth substrate surfaces and reduce lattice mismatch；
One bottom electrode, its epitaxial growth is on the buffer layer；
Intercalation once, its epitaxial growth is on the bottom electrode；
One barrier layer, its epitaxial growth is on lower intercalation；
Intercalation on one, its epitaxial growth is on barrier layer；
Electrode on one, its epitaxial growth is on upper intercalation；
One cover layer, understructure, on upper electrode, is shielded by its epitaxial growth.
Heusler alloy the most according to claim 1 is the MnGa base perpendicular magnetic tunnel of intercalation
Knot, the material of the most upper and lower electrode is the L1 with high perpendicular magnetic anisotropic0-MnGa thin film.
Heusler alloy the most according to claim 1 is the MnGa base perpendicular magnetic tunnel of intercalation
Knot, the material of the most upper and lower intercalation is Co2MnSi、Co2MnAl、Co2FeAl or Co2FeSi thin film,
Its thickness is 0.6-1.5nm.
Heusler alloy the most according to claim 1 is the MnGa base perpendicular magnetic tunnel of intercalation
Knot, wherein the material of barrier layer is Al2O3Or MgO, its thickness is 0.8-2nm.
Heusler alloy the most according to claim 1 is the MnGa base perpendicular magnetic tunnel of intercalation
Knot, wherein the material of cover layer is Pd, Pt, Ta or Al, and its thickness is 0.8-2nm.
6. Heusler alloy is the preparation method of MnGa base perpendicular magnetic tunnel knot for intercalation, bag
Include following steps:
Step 1: take a substrate；
Step 2: be sequentially prepared on substrate cushion, bottom electrode, lower intercalation, barrier layer, on insert
Layer, upper electrode and cover layer；
Step 3: vacuum magnetic field makes annealing treatment, completes preparation.
Heusler alloy the most according to claim 6 is the MnGa base perpendicular magnetic tunnel of intercalation
The preparation method of knot, the material of the most upper and lower electrode is L10-MnGa thin film.
Heusler alloy the most according to claim 6 is the MnGa base perpendicular magnetic tunnel of intercalation
The preparation method of knot, the material of the most upper and lower intercalation is Co2MnSi、Co2MnAl、Co2FeAl or
Co2FeSi thin film, its thickness is 0.6-1.5nm.
Heusler alloy the most according to claim 6 is the MnGa base perpendicular magnetic tunnel of intercalation
The preparation method of knot, wherein the material of barrier layer is Al2O3Or MgO, its thickness is 0.8-2nm.
Heusler alloy the most according to claim 6 is the MnGa base perpendicular magnetic tunnel of intercalation
The preparation method of knot, wherein the material of cover layer is Pd, Pt, Ta or Al, and its thickness is 0.8-2nm.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970551A (en) * | 2018-09-28 | 2020-04-07 | 三星电子株式会社 | Apparatus and method for spin transfer torque switching of magnetic layers with volumetric uniaxial magnetocrystalline anisotropy |
| CN111441012A (en) * | 2020-04-22 | 2020-07-24 | 南京理工大学 | Magnetic thin film material with low magnetic dead layer thickness and preparation method thereof |
| CN111864055A (en) * | 2016-09-29 | 2020-10-30 | Tdk株式会社 | Magnetoresistive effect element |
| CN113447866A (en) * | 2020-03-27 | 2021-09-28 | Tdk株式会社 | Magnetic sensor and method for manufacturing the same |
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| CN101079469A (en) * | 2006-05-26 | 2007-11-28 | 中国科学院物理研究所 | MgO dual-potential magnetic tunnel structure with quanta effect and its purpose |
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| US20150188034A1 (en) * | 2013-12-27 | 2015-07-02 | Shigeki Takahashi | Magnetic tunnel junction device |
| CN105702416A (en) * | 2016-04-18 | 2016-06-22 | 北京航空航天大学 | Multilayer film with strong vertical magnetic anisotropy |
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| CN111864055A (en) * | 2016-09-29 | 2020-10-30 | Tdk株式会社 | Magnetoresistive effect element |
| CN111864055B (en) * | 2016-09-29 | 2024-01-26 | Tdk株式会社 | Magneto-resistance effect element |
| CN110970551A (en) * | 2018-09-28 | 2020-04-07 | 三星电子株式会社 | Apparatus and method for spin transfer torque switching of magnetic layers with volumetric uniaxial magnetocrystalline anisotropy |
| CN113447866A (en) * | 2020-03-27 | 2021-09-28 | Tdk株式会社 | Magnetic sensor and method for manufacturing the same |
| CN111441012A (en) * | 2020-04-22 | 2020-07-24 | 南京理工大学 | Magnetic thin film material with low magnetic dead layer thickness and preparation method thereof |
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| CN105977375B (en) | 2019-08-16 |
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