CN210586087U - 一种大尺寸硅圆片清洗装置 - Google Patents
一种大尺寸硅圆片清洗装置 Download PDFInfo
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- CN210586087U CN210586087U CN201921157186.6U CN201921157186U CN210586087U CN 210586087 U CN210586087 U CN 210586087U CN 201921157186 U CN201921157186 U CN 201921157186U CN 210586087 U CN210586087 U CN 210586087U
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- silicon wafer
- brush
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- cleaning device
- blowing
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 209
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 200
- 239000010703 silicon Substances 0.000 title claims abstract description 200
- 238000004140 cleaning Methods 0.000 title claims abstract description 73
- 238000007664 blowing Methods 0.000 claims abstract description 72
- 238000005507 spraying Methods 0.000 claims abstract description 37
- 239000007788 liquid Substances 0.000 claims abstract description 17
- 239000004570 mortar (masonry) Substances 0.000 claims abstract description 13
- 238000001035 drying Methods 0.000 claims abstract description 4
- 239000007921 spray Substances 0.000 claims description 36
- 230000001680 brushing effect Effects 0.000 claims description 23
- 230000005540 biological transmission Effects 0.000 claims description 2
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 230000002000 scavenging effect Effects 0.000 abstract description 2
- 238000005201 scrubbing Methods 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 143
- 238000000034 method Methods 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 239000011863 silicon-based powder Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000009210 therapy by ultrasound Methods 0.000 description 4
- 238000000861 blow drying Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
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CN201921157186.6U CN210586087U (zh) | 2019-07-23 | 2019-07-23 | 一种大尺寸硅圆片清洗装置 |
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CN201921157186.6U CN210586087U (zh) | 2019-07-23 | 2019-07-23 | 一种大尺寸硅圆片清洗装置 |
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CN210586087U true CN210586087U (zh) | 2020-05-22 |
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CN201921157186.6U Active CN210586087U (zh) | 2019-07-23 | 2019-07-23 | 一种大尺寸硅圆片清洗装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110369371A (zh) * | 2019-07-23 | 2019-10-25 | 天津中环领先材料技术有限公司 | 一种大尺寸硅圆片清洗装置及其清洗工艺 |
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2019
- 2019-07-23 CN CN201921157186.6U patent/CN210586087U/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110369371A (zh) * | 2019-07-23 | 2019-10-25 | 天津中环领先材料技术有限公司 | 一种大尺寸硅圆片清洗装置及其清洗工艺 |
CN110369371B (zh) * | 2019-07-23 | 2024-05-07 | 天津中环领先材料技术有限公司 | 一种大尺寸硅圆片清洗装置及其清洗工艺 |
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Effective date of registration: 20220512 Address after: 300384 Tianjin Binhai New Area Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 Tianjin Binhai New Area Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 inside. Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: 300384 Tianjin Binhai New Area Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region before: China Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. |