CN210575952U - 一种低输入电阻功率半导体晶体管 - Google Patents
一种低输入电阻功率半导体晶体管 Download PDFInfo
- Publication number
- CN210575952U CN210575952U CN201921784162.3U CN201921784162U CN210575952U CN 210575952 U CN210575952 U CN 210575952U CN 201921784162 U CN201921784162 U CN 201921784162U CN 210575952 U CN210575952 U CN 210575952U
- Authority
- CN
- China
- Prior art keywords
- gate
- semiconductor transistor
- resistance
- electrode
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201921784162.3U CN210575952U (zh) | 2019-10-23 | 2019-10-23 | 一种低输入电阻功率半导体晶体管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201921784162.3U CN210575952U (zh) | 2019-10-23 | 2019-10-23 | 一种低输入电阻功率半导体晶体管 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN210575952U true CN210575952U (zh) | 2020-05-19 |
Family
ID=70633294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201921784162.3U Active CN210575952U (zh) | 2019-10-23 | 2019-10-23 | 一种低输入电阻功率半导体晶体管 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN210575952U (zh) |
-
2019
- 2019-10-23 CN CN201921784162.3U patent/CN210575952U/zh active Active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110797403B (zh) | 一种rc-igbt半导体装置 | |
CN102779840B (zh) | 一种具有终端深能级杂质层的igbt | |
US20130062626A1 (en) | Power semiconductor module | |
US20210218396A1 (en) | Gate drive circuit for reducing reverse recovery current of power device | |
KR101613442B1 (ko) | 절연 게이트형 바이폴라 트랜지스터 | |
US11641201B2 (en) | Hybrid power devices | |
CN107623512B (zh) | 一种有源密勒箝位保护电路 | |
CN111600461A (zh) | 一种改进型SiC MOSFET桥臂串扰抑制驱动电路及方法 | |
CN110444589B (zh) | 一种具有过流保护功能的igbt | |
CN209232796U (zh) | 一种分裂栅igbt结构 | |
CN108599749B (zh) | 用于半桥电路门极保护的两极钳位电路及其应用 | |
CN111261698B (zh) | 一种消除电压折回现象的rc-ligbt器件 | |
CN210575952U (zh) | 一种低输入电阻功率半导体晶体管 | |
CN109817708B (zh) | 一种快速开关igbt结构 | |
CN109616518B (zh) | 一种mos栅控晶闸管 | |
CN110504312B (zh) | 一种具有短路自保护能力的横向igbt | |
US9306047B2 (en) | Semiconductor device and electric power converter in which same is used | |
CN108389899A (zh) | Rc-igbt器件及其工艺方法 | |
CN110504259B (zh) | 一种具有过流保护能力的横向igbt | |
US20150349102A1 (en) | Ti-igbt and formation method thereof | |
CN211981740U (zh) | Igbt有源钳位电路 | |
CN205544903U (zh) | Sj-mos管电路的拓扑结构 | |
CN111725978A (zh) | 具有负压关断和串扰抑制功能的SiC MOSFET栅极驱动电路 | |
CN210073858U (zh) | 可抑制非线性电容的功率半导体器件 | |
CN109888006B (zh) | 一种低功耗绝缘体上硅横向绝缘栅双极型晶体管 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: A low input resistance power semiconductor transistor Effective date of registration: 20220818 Granted publication date: 20200519 Pledgee: Shenzhen small and medium sized small loan Co.,Ltd. Pledgor: Shenzhen still core technology Co.,Ltd. Registration number: Y2022440020168 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230818 Granted publication date: 20200519 Pledgee: Shenzhen small and medium sized small loan Co.,Ltd. Pledgor: Shenzhen still core technology Co.,Ltd. Registration number: Y2022440020168 |