CN210489640U - High-heat-dissipation light-emitting diode - Google Patents
High-heat-dissipation light-emitting diode Download PDFInfo
- Publication number
- CN210489640U CN210489640U CN201921702831.8U CN201921702831U CN210489640U CN 210489640 U CN210489640 U CN 210489640U CN 201921702831 U CN201921702831 U CN 201921702831U CN 210489640 U CN210489640 U CN 210489640U
- Authority
- CN
- China
- Prior art keywords
- base
- heat conduction
- heat
- emitting diode
- bottom plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052802 copper Inorganic materials 0.000 claims abstract description 39
- 239000010949 copper Substances 0.000 claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 230000017525 heat dissipation Effects 0.000 claims description 32
- 239000011521 glass Substances 0.000 claims description 13
- 230000005855 radiation Effects 0.000 abstract 2
- 230000004907 flux Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses a high heat radiation LED, which comprises a base and a heat radiation unit; the base is groove-shaped, and a substrate is arranged at the bottom in the base; the radiating unit comprises a heat-conducting copper column, a heat-conducting copper plate, a heat-conducting silicon column, a heat-conducting bottom plate and radiating fins, the upper surface of the heat-conducting bottom plate is fixedly connected with the lower surface of the base, the middle part of the upper surface of the base plate is arranged on the heat-conducting copper plate, the upper surface of the heat-conducting copper plate is fixedly connected with the lower surface of the wafer, the upper end of the heat-conducting copper column is fixedly connected with the middle part of the lower surface of the heat-conducting copper plate, the lower end of the heat-conducting copper column penetrates through the upper surfaces of the base plate and the base and is fixedly connected with the middle part of the upper surface of the heat-conducting bottom plate, the four heat-conducting silicon columns are respectively arranged in four through grooves in the upper surface of the base, and.
Description
Technical Field
The utility model relates to a light emitting diode technical field specifically is a high heat dissipation light emitting diode.
Background
The light emitting diode is a commonly used light emitting device, releases energy through electron and hole recombination to emit light, is widely applied in the field of illumination, can efficiently convert electric energy into light energy, has wide application in modern society, such as illumination, flat panel display, medical devices and the like, generally increases the power of the light emitting diode to improve the brightness of the light emitting diode, but generates a large amount of heat when the light emitting diode works under the condition of improving the power, the light emitting diode which improves the power at present mainly increases the heat dissipation effect by increasing the surface area, but the heat is mainly generated when a wafer emits light, the increase of the external surface area cannot timely dissipate the internal heat, the brightness of the light emitting diode is reduced, and the service life of the light emitting diode is influenced.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is to overcome current defect, provide a high heat dissipation light emitting diode, can with the quick outside of deriving of the heat that the light emitting diode during operation produced to give off the heat, make light emitting diode be in normal operating temperature, can effectively solve the problem in the background art.
In order to achieve the above object, the utility model provides a following technical scheme: a high heat dissipation light emitting diode comprises a base and a heat dissipation unit;
base: the base is groove-shaped, and a substrate is arranged at the bottom in the base;
a heat dissipation unit: the heat dissipation unit comprises heat conduction copper columns, heat conduction copper plates, heat conduction silicon columns, a heat conduction bottom plate and heat dissipation fins, wherein the upper surface of the heat conduction bottom plate is fixedly connected with the lower surface of the base, the heat conduction copper plates are arranged in the middle of the upper surface of the base plate, the upper surface of the heat conduction copper plates is fixedly connected with the lower surface of the wafer, the upper ends of the heat conduction copper columns are fixedly connected with the middle of the lower surface of the heat conduction copper plates, the lower ends of the heat conduction copper columns penetrate through the base plate and the upper surface of the base to be fixedly connected with the middle of the upper surface of the heat conduction bottom plate, the four heat conduction silicon columns are respectively arranged in four through grooves in the upper surface of the base, the upper surfaces of the four heat conduction silicon columns are fixedly connected with the lower surface of the base plate, the heat dissipation fins are arranged on the side surfaces of the base, and, the lower end of the radiating fin is fixedly connected with the upper surface of the heat conducting bottom plate, heat generated by the chip and the substrate in the light emitting diode can be led out to the outside through the radiating unit, and the heat is radiated through the radiating fin.
Further, still include the light gathering bowl, the light gathering bowl is established in the middle part of heat conduction copper upper surface, and the light gathering bowl is located the outside of wafer, can make the light that the wafer sent gather through the light gathering bowl, improves emitting diode's luminance.
Furthermore, the LED lamp also comprises a glass lens, wherein the glass lens is arranged in the base, the lower end of the glass lens is fixedly connected with the upper surface of the base, and light emitted by the wafer can be secondarily condensed through the glass lens, so that the light flux is improved.
Further, still include the pin, the pin is equipped with two, and the length of two pins is different, and the upper end of two pins passes the lower surface of heat conduction bottom plate, base plate and heat conduction copper in proper order and the both ends fixed connection of wafer lower surface, can make things convenient for wafer connection external power source through the pin.
Furthermore, the LED lamp also comprises six fixing holes, wherein the six fixing holes are uniformly formed along the lower surface of the heat conducting bottom plate, and the LEDs can be conveniently installed and fixed through the fixing holes.
Compared with the prior art, the beneficial effects of the utility model are that: this high heat dissipation LED has following benefit:
1. the heat generated by the chip and the substrate in the LED can be conducted out to the outside through the heat dissipation unit, and the heat can be dissipated through the heat dissipation sheet.
2. The light emitted by the wafer can be collected through the light-gathering bowl, the brightness of the light-emitting diode is improved, the light emitted by the wafer can be gathered secondarily through the glass lens, and the light flux is improved.
3. The wafer can be conveniently connected with an external power supply through the pins, and the light emitting diode can be conveniently installed and fixed through the fixing holes.
Drawings
FIG. 1 is a schematic front view of the present invention;
fig. 2 is a schematic view of the internal structure of the present invention.
In the figure: the solar cell module comprises a base 1, a base plate 2, a heat dissipation unit 3, a heat conduction copper column 31, a heat conduction copper plate 32, a heat conduction silicon column 33, a heat conduction bottom plate 34, a heat dissipation fin 35, a wafer 4, a light condensation bowl 5, a glass lens 6, a pin 7 and a fixing hole 8.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-2, the present invention provides a technical solution: a high heat dissipation light emitting diode comprises a base 1 and a heat dissipation unit 3;
base 1: the base 1 is groove-shaped, and the bottom in the base 1 is provided with a substrate 2;
the heat dissipation unit 3: the heat dissipation unit 3 comprises heat conduction copper columns 31, heat conduction copper plates 32, heat conduction silicon columns 33, heat conduction bottom plates 34 and heat dissipation fins 35, wherein the upper surface of the heat conduction bottom plate 34 is fixedly connected with the lower surface of the base 1, the heat conduction copper plates 32 are arranged in the middle of the upper surface of the base plate 2, the upper surfaces of the heat conduction copper plates 32 are fixedly connected with the lower surface of the wafer 4, the upper ends of the heat conduction copper columns 31 are fixedly connected with the middle of the lower surface of the heat conduction copper plates 32, the lower ends of the heat conduction copper columns 31 penetrate through the upper surfaces of the base plate 2 and the base 1 and are fixedly connected with the middle of the upper surface of the heat conduction bottom plate 34, the four heat conduction silicon columns 33 are respectively arranged in four through grooves in the upper surface of the base 1, the upper surfaces of the four heat conduction silicon columns 33 are fixedly connected with the lower surface of the base plate 2, the lower surfaces, the side of the base 1 is provided with at least twenty heat dissipation fins 35, the lower ends of the heat dissipation fins 35 are fixedly connected with the upper surface of the heat conduction bottom plate 34, heat generated by the chip 4 and the substrate 2 in the light emitting diode can be conducted out to the outside through the heat dissipation unit 3, and the heat is dissipated through the heat dissipation fins 35.
Wherein: still include light bowl 5, light bowl 5 establishes the middle part at heat conduction copper 32 upper surface, and light bowl 5 is located the outside of wafer 4, can make the light that wafer 4 sent gather through light bowl 5, improves emitting diode's luminance.
Wherein: the solar cell module further comprises a glass lens 6, the glass lens 6 is arranged inside the base 1, the lower end of the glass lens 6 is fixedly connected with the upper surface of the base 1, light emitted by the wafer 4 can be secondarily condensed through the glass lens 6, and the light flux is improved.
Wherein: still include pin 7, pin 7 is equipped with two, and the length of two pins 7 is different, and the upper end of two pins 7 passes heat conduction bottom plate 34, base 1, base plate 2 and heat conduction copper 32's lower surface and the both ends fixed connection of wafer 4 lower surface in proper order, can make things convenient for wafer 4 to connect external power source through pin 7.
Wherein: still include fixed orifices 8, fixed orifices 8 are equipped with six, and six fixed orifices 8 evenly set up along the lower surface of heat conduction bottom plate 34, can make things convenient for emitting diode's installation and fixed through fixed orifices 8.
When in use: install emitting diode through fixed orifices 8, it makes wafer 4 luminous to be connected pin 7 and external power supply, the heat that wafer 4 produced in the course of the work can be given to heat conduction copper 32, heat transfer to heat conduction bottom plate 34 on with heat conduction copper 32 through heat conduction copper post 31, can be with the quick transmission to heat conduction bottom plate 34 of the heat that produces on the base plate 2 through heat conduction silicon post 33, in the heat quick gived off the air on with heat conduction bottom plate 34 through fin 35, make wafer 4 be in normal operating temperature.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. A high heat dissipation light emitting diode is characterized in that: comprises a base (1) and a heat dissipation unit (3);
base (1): the base (1) is groove-shaped, and a substrate (2) is arranged at the bottom in the base (1);
heat dissipation unit (3): the heat dissipation unit (3) comprises heat conduction copper columns (31), a heat conduction copper plate (32), heat conduction silicon columns (33), a heat conduction bottom plate (34) and heat dissipation fins (35), the upper surface of the heat conduction bottom plate (34) is fixedly connected with the lower surface of the base (1), the heat conduction copper plate (32) is arranged in the middle of the upper surface of the base plate (2), the upper surface of the heat conduction copper plate (32) is fixedly connected with the lower surface of the wafer (4), the upper ends of the heat conduction copper columns (31) are fixedly connected with the middle of the lower surface of the heat conduction copper plate (32), the lower ends of the heat conduction copper columns (31) penetrate through the upper surfaces of the base plate (2) and the base (1) and the middle of the upper surface of the heat conduction bottom plate (34), the heat conduction silicon columns (33) are four, the four heat conduction silicon columns (33) are respectively arranged in four through grooves in the upper surface of the base (1), and the upper surfaces of the four heat conduction silicon columns (, the lower surfaces of the four heat-conducting silicon columns (33) are fixedly connected with the upper surface of the heat-conducting bottom plate (34), the radiating fins (35) are arranged on the side surface of the base (1), the radiating fins (35) which are not less than twenty are arranged on the side surface of the base (1), and the lower ends of the radiating fins (35) are fixedly connected with the upper surface of the heat-conducting bottom plate (34).
2. The high heat dissipation light-emitting diode of claim 1, wherein: still include light bowl (5), light bowl (5) are established in the middle part of heat conduction copper (32) upper surface, and light bowl (5) are located the outside of wafer (4).
3. The high heat dissipation light-emitting diode of claim 1, wherein: still include glass lens (6), establish in the inside of base (1) glass lens (6), and the upper surface fixed connection of glass lens (6) lower extreme and base (1).
4. The high heat dissipation light-emitting diode of claim 1, wherein: still include pin (7), pin (7) are equipped with two, and the length of two pins (7) is different, and the lower surface that heat conduction bottom plate (34), base (1), base plate (2) and heat conduction copper (32) were passed in proper order to the upper end of two pins (7) and the both ends fixed connection of wafer (4) lower surface.
5. The high heat dissipation light-emitting diode of claim 1, wherein: still include fixed orifices (8), fixed orifices (8) are equipped with six, and six fixed orifices (8) evenly set up along the lower surface of heat conduction bottom plate (34).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921702831.8U CN210489640U (en) | 2019-10-12 | 2019-10-12 | High-heat-dissipation light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921702831.8U CN210489640U (en) | 2019-10-12 | 2019-10-12 | High-heat-dissipation light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210489640U true CN210489640U (en) | 2020-05-08 |
Family
ID=70509737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921702831.8U Expired - Fee Related CN210489640U (en) | 2019-10-12 | 2019-10-12 | High-heat-dissipation light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210489640U (en) |
-
2019
- 2019-10-12 CN CN201921702831.8U patent/CN210489640U/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100857058B1 (en) | Cooling structure of street lamp utilizing a light emitting diode | |
| CN2872073Y (en) | High-brightness and large-power LED light | |
| CN203192852U (en) | Led packaging structure | |
| CN101576241B (en) | Radiating method of LED radiator and radiator for implementing same | |
| CN210489640U (en) | High-heat-dissipation light-emitting diode | |
| CN101294660B (en) | LED lighting lamp | |
| CN207049636U (en) | Long-life LED luminescence unit | |
| CN213184342U (en) | Ceramic surface LED lamp packaging structure | |
| CN206864500U (en) | It is a kind of based on heat-conducting plate and heat sink cooling LED packaged light source structure | |
| CN211789006U (en) | Outdoor PCT3030 high-brightness light-emitting diode | |
| CN210107301U (en) | High-power LED's quick heat dissipation encapsulation | |
| CN109708032B (en) | High heat dissipation type lamp bead arrangement LED lamp | |
| CN103227266B (en) | LED encapsulation structure | |
| CN201547725U (en) | Heat dissipation device of LED lamp | |
| CN207637841U (en) | A kind of LED encapsulation structure | |
| CN201589145U (en) | LED street lamp cap | |
| CN207381432U (en) | Led lamp bead | |
| CN201396653Y (en) | Heat radiation improved structure for high-power LED street lamp | |
| CN111106099A (en) | High-power COB heat dissipation packaging structure | |
| CN206207244U (en) | A kind of radiator and LED street lamp | |
| CN214119714U (en) | LED with good heat dissipation | |
| CN221629704U (en) | LED heat dissipation backboard | |
| CN211875855U (en) | LED low-voltage safety bracket lamp for basement | |
| CN213712682U (en) | Heat dissipation type LED lamp | |
| CN211925493U (en) | LED ceiling spotlight |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200508 |