CN210349816U - Heat dissipation type intelligent power semiconductor device based on micro-level SSOP packaging - Google Patents

Heat dissipation type intelligent power semiconductor device based on micro-level SSOP packaging Download PDF

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Publication number
CN210349816U
CN210349816U CN201921393944.4U CN201921393944U CN210349816U CN 210349816 U CN210349816 U CN 210349816U CN 201921393944 U CN201921393944 U CN 201921393944U CN 210349816 U CN210349816 U CN 210349816U
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China
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heat dissipation
ssop
power switch
package
lead frame
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CN201921393944.4U
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孙炎权
崔卫兵
蒋卫娟
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HUAYI MICROELECTRONICS Co.,Ltd.
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Tianshui Huatian Electronic Group Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The utility model relates to a heat dissipation type intelligent power semiconductor device based on small level SSOP encapsulation, include heat dissipation intelligent power semiconductor module, heat abstractor based on small level SSOP encapsulation, module collection control element (MCU), drive element, power switch component, temperature detection element in an organic whole and packaging structure adopts the small-size surface mounting encapsulation of the minimum level of industry (SSOP), and the cooling surface design combines customer end practical application to make the product reach best radiating effect. The utility model discloses among the heat dissipation intelligent power semiconductor module, reach the effect that improves temperature detection element detectivity through arranging of design power component, simultaneously, through changing the cooling surface structure, improved the radiating effect of product greatly, can satisfy the heat dissipation requirement of higher power product, this structure can also derive polytype packaging structure form according to product power switch element's different power requirements.

Description

Heat dissipation type intelligent power semiconductor device based on micro-level SSOP packaging
The utility model belongs to the branch application of the utility model application, invented name is heat dissipation intelligent power semiconductor module based on small level SSOP encapsulation, application date is 2018 12 months 27 days, application number is 2018222198189, belongs to another product technology part.
Technical Field
The utility model relates to an intelligent power semiconductor module, in particular to high integrated circuit have carried out the intelligent power semiconductor module of resin encapsulation, especially relate to heat dissipation type intelligent power semiconductor device based on small rank SSOP encapsulation.
Background
A motor rotation control device used for a product such as a refrigerator, an air conditioner, and a washing machine called a white home appliance is equipped with a semiconductor device, so-called an IPM (Intelligent Power Module) (hereinafter, referred to as IPM), which is a control IC and a drive IC for controlling and driving a Power switching element. The existing intelligent power module is difficult to transmit the heating temperature of the power switch element to the control element side due to the structural form and the assembly process complexity, and can only be connected with a temperature detection element in an external circuit board. In order to avoid the protection failure, temperature detection elements are required to be connected to the front side and the back side of the external circuit board at the same time, and the principle is that the temperature of a power element in the power module is reversely deduced from an external temperature measurement result through temperature proportion conversion. However, since the distance between the module and the internal power element is long, a low temperature protection threshold needs to be set according to the relationship between the temperature radiation and the distance; in addition, the external temperature detection element is easily influenced by the overall environmental temperature of the circuit board, so that the opportunity of starting the temperature protection function is increased, and the working efficiency of the power module and the whole system is influenced. Meanwhile, the power element in the shape of the conventional SSOP package is bonded at the upper die of the plastic package body, the heat dissipation surface is arranged at the lower die of the plastic package body, the lower die of the plastic package body is very close to the circuit board, the heat dissipation space is very small, and the heat dissipation device with a strong heat dissipation function is difficult to connect, so that the overall heat dissipation effect of the module is influenced. In addition, with the recent trend toward higher speed, larger capacity and smaller size of electronic devices, there is an increasing demand for structures and manufacturing methods capable of effectively releasing heat generated by modules, and particularly for IPM of small-scale surface mount packages, the conventional SSOP package vertical structure cannot satisfy the heat dissipation and temperature-sensitive requirements.
Disclosure of Invention
The utility model aims to improve the sensitivity that small rank encapsulation appearance temperature detected and improve the radiating effect of product to disclose the heat dissipation intelligent power semiconductor module of a new construction, especially have effectual temperature measurement, radiating effect to current small rank packaging structure, solved the problem that current modular structure can't satisfy the semiconductor encapsulation module performance demand that diminishes day by day.
The utility model adopts the following technical scheme:
a heat dissipation intelligent power semiconductor module based on micro-scale SSOP packaging comprises a lead frame, a control element, a driving element, a power switch element, a temperature detection element, a plastic package and an external lead; the control element, the driving element, the power switch element and the temperature detection element are all adhered to the lead frame. The conventional SSOP package is used for IC packaging, has low power, is generally less than 10W, and basically has no heat dissipation problem because the heat dissipation can be realized through a circuit board; because of the platform advantage of the SSOP package, the IPM has the demand of gradually adopting the package process, and because the prior art is limited (biased), the prior art does not have the teaching about the IPM temperature measurement and heat dissipation of the SSOP package, and the technicians in the field still adopt the prior IC package mode to dissipate heat through an external circuit board, which obviously brings about two problems, the first method is not suitable for higher power demand, and the high power causes high temperature and is more easily damaged, so a more sensitive and effective temperature measurement structure and a fast and efficient heat dissipation structure are needed, the second method causes low use efficiency, the working time of a power switch element is short, the stopping time is long, and the following analysis is performed; the existence of these two problems makes prior art not have the teaching of SSOP encapsulation IPM that can practical application, the utility model discloses creative integrated temperature measurement element has improved the temperature measurement effect on the lead frame, does benefit to the improvement of work efficiency and the protection of component.
Furthermore, the utility model discloses a heat dissipation type intelligent power semiconductor device based on small-scale SSOP encapsulation, which comprises a heat dissipation intelligent power semiconductor module based on small-scale SSOP encapsulation and a heat dissipation device; the heat dissipation intelligent power semiconductor module based on the micro-scale SSOP packaging comprises a lead frame, a control element, a driving element, a power switch element, a temperature detection element, a plastic package and an external lead; the control element, the driving element, the power switch element and the temperature detection element are all positioned on the lead frame; the heat dissipation device is located at the heat dissipation surface of the lead frame. Preferably, the heat dissipation device is an air-cooled heat dissipation device or a water-cooled heat dissipation device, and particularly is an existing product. The utility model discloses need not redesign heat abstractor, but the creative position relation who utilizes new heat abstractor and the intelligent power semiconductor module that dispels the heat based on small rank SSOP encapsulation, on current heat abstractor's basis, the intelligent power module heat dissipation interface that the design was based on small rank SSOP encapsulation is close heat abstractor.
Still further, the utility model discloses a heat dissipation type intelligent power control structure based on small-scale SSOP encapsulation, the heat dissipation type intelligent power control structure based on small-scale SSOP encapsulation includes heat dissipation intelligent power semiconductor module based on small-scale SSOP encapsulation, heat abstractor, circuit board; the heat dissipation intelligent power semiconductor module based on the micro-scale SSOP packaging comprises a lead frame, a control element, a driving element, a power switch element, a temperature detection element, a plastic package and an external lead; the control element, the driving element, the power switch element and the temperature detection element are all positioned on the lead frame; the heat dissipation intelligent power semiconductor module based on the micro-scale SSOP packaging is positioned between the heat dissipation device and the circuit board; the height from the heat dissipation device to the lead frame is smaller than the height from the circuit board to the lead frame. Preferably, the heat dissipation device is an air-cooled heat dissipation device or a water-cooled heat dissipation device, and particularly is an existing product; the heat dissipation intelligent power semiconductor module based on the micro-scale SSOP package is connected with the circuit board through an external lead. The utility model discloses need not redesign heat abstractor, but creative adjustment heat abstractor, circuit board and heat dissipation intelligent power semiconductor module's positional relationship, on current heat abstractor's basis, the design is based on the intelligent power module heat dissipation interface of small rank SSOP encapsulation and is close heat abstractor, rather than the structure that the small rank encapsulation cooling surface of conventional is close the circuit board.
When a semi-packaging structure is adopted, a heat dissipation interface (a heat dissipation substrate) of the heat dissipation intelligent power semiconductor module packaged based on the SSOP of the micro-scale is directly attached and contacted with a heat dissipation device through heat conduction glue, the heat dissipation substrate can be made of different materials according to heat dissipation requirements of different scales, and an insulating aluminum substrate, a ceramic substrate or a ceramic/copper metal composite substrate can be adopted; when a full-package structure is adopted, the heat dissipation interface (plastic package shell) of the heat dissipation intelligent power semiconductor module based on the small-level SSOP package is directly contacted with the heat dissipation device through the heat conduction glue in a fitting manner, and the depth of the convex structure of the lead frame is preferably adjusted, so that the thickness of the epoxy plastic package material of the heat dissipation surface is reduced, and the high heat dissipation effect is achieved by using the common epoxy plastic package material. The heat dissipation interface of the heat dissipation intelligent power semiconductor module based on the micro-scale SSOP packaging is directly combined with the heat dissipation device, so that the problems that the heat dissipation surface of the existing micro-scale packaging is combined with a circuit board, the distance from the heat dissipation surface to the heat dissipation device is long, the heat dissipation path is long and complex are solved, and the heat radiation effect is best.
In the present invention, the intelligent power semiconductor module further has other conventional components, such as an internal connection line, which is a conventional structure for connecting each component, all the components (components) are conventional products, each component is bonded to the lead frame by using a conventional bonding means, and the components are conventionally connected by the internal connection line according to the circuit function design; the applicant does not adopt a new element, but creatively provides a new structure on the basis of the existing element, overcomes the inherent stipulations of the prior art, thereby obtaining the heat dissipation intelligent power semiconductor module with sensitive heat dissipation and excellent heat dissipation effect, and can obtain the heat dissipation intelligent power semiconductor device packaged at a micro level by combining the existing heat dissipation device, and further combine with the circuit board to limit the position relation of the circuit board, the heat dissipation intelligent power semiconductor module and the heat dissipation intelligent power control structure, so as to obtain the heat dissipation intelligent power control structure, replace the existing structure for motor rotation control, and increase the service life of the product. More sensitive to high temperature, avoid prior art to avoid burning out the circuit and adopt the operating efficiency low problem that measures such as reducing the temperature threshold value, stopping power switch in advance brought, the utility model discloses a structural design can make the semiconductor module improve under the condition that work efficiency (the frequency of stop work reduces, the time of maintaining work lengthens) still can improve the life of module. The driving element of the utility model comprises an integrated low-voltage driving element, an integrated high-voltage driving element or an integrated high-low voltage driving element; the power switch elements comprise high-voltage side power switch elements and low-voltage side power switch elements, for example, the driving elements are a plurality of high-voltage and low-voltage integrated driving elements, or a single integrated low-voltage driving element and a single integrated high-voltage driving element, or a single highly integrated high-voltage and low-voltage driving element; the power switch elements comprise a high-voltage side power switch element and a low-voltage side power switch element. The driving element is used for driving the high-voltage side power switching element and the low-voltage side power switching element. Preferably, the high-voltage side power switch element and the low-voltage side power switch element are respectively located on two sides of the lead frame; the temperature detection element is positioned on one side of the high-voltage side power switch element; for example, when a single integrated low-voltage driving element and a single integrated high-voltage driving element are used, the high-voltage side power switching element and the low-voltage side power switching element are respectively located at two sides of the lead frame, and the temperature detection element is located at one side of the high-voltage side power switching element and preferably located in the middle of one side of the high-voltage side power switching element; when a plurality of integrated high-low voltage driving elements are adopted, the high-voltage side power switching elements and the low-voltage side power switching elements are alternately arranged, and the temperature detection element is positioned in the middle of the power switching elements; when a single integrated high-low voltage driving element is used, the high-side power switching element and the low-side power switching element are respectively located on both sides of the lead frame, and the temperature detection element is located on one side of the high-side power switching element, and preferably located in the middle of one side of the high-side power switching element. Concrete driving method is prior art, does not influence the utility model discloses the realization of effect, the utility model discloses the key point lies in to close temperature element and power element and seal in same plastic envelope internally, and is very close the power unit that generates heat.
Preferably, when a single integrated high-low voltage driving element is adopted, the intelligent power semiconductor module of the present invention further comprises a wiring element; the wiring element is bonded on the lead frame, the integrated high-voltage and low-voltage driving element is connected with the high-voltage side power switch element and/or the low-voltage side power switch element through the wiring element, and the number of the wiring elements can be 1-3. The lead frame is an existing product, is obtained according to a conventional method, is provided with various stamped or etched circuits and is used for connecting elements and connecting a module and an external circuit board, electronic elements contained in the module are connected to the lead frame through an existing adhesive sheet material, the lead frame can be used as a carrier to carry the electronic elements to be positioned in a packaging shell, and for example, the lead frame, a control element, a driving element, a power switch element and a temperature detection element are positioned in the plastic packaging shell; the external lead is positioned outside the plastic package shell, the external lead protruding from the plastic package body can be a DIP type or SOP type package body, and when the intelligent power semiconductor module further comprises a wiring element, the wiring element is also positioned in the package shell; one surface of the lead frame is bonded with a control element, a driving element, a power switch element, a temperature detection element and the like by a conventional method, and the other surface is a smooth surface for heat dissipation and is called a heat dissipation surface. The existing micro-scale package design is that when in plastic package, the element-free surface of a lead frame faces downwards and the element surface faces upwards, which leads to the limitation of heat dissipation, intelligent power semiconductor modules are all mounted on a circuit board, the heat dissipation surface of the lead frame is basically bonded with the circuit board and is far away from a heat dissipation device in the existing method, and only heat conduction can be realized by packaging resin, so that under the condition that the heat conduction capability of the packaging resin is general, the heat dissipation of the existing structure is limited, even if the heat conduction resin with a new formula is adopted, the heat dissipation is not satisfactory, because the existing micro-scale SSOP package has no power element integration or integrated power element has smaller power and lower heat dissipation requirement, but along with the development of the semiconductor industry, the market requires higher power density of the module, the package appearance is smaller and more, the heat dissipation requirement is more and more rigorous, and under the same package, the existing SSOP packaging module can not meet the integration of various elements, and particularly has poor heat dissipation capability. The utility model discloses the cooling surface of preferred lead frame is located the inside upper end of plastic envelope, and the face that is also pasting various components with the lead frame is facing down, the cooling surface is facing up (according to current use position) to when adopting current method to paste the dress on the circuit board, the cooling surface of lead frame is laminated with heat abstractor basically, has optimized the heat dissipation route, has greatly shortened the radiating distance, effectively promotes the radiating effect, thereby improves system efficiency, the utility model discloses the change and the optimization of structure provide probably to compatible wideer product power scope on same encapsulation appearance basis.
In the utility model, the high-voltage side power switch element and the low-voltage side power switch element are respectively positioned at two sides of the lead frame; the temperature detection element is positioned on one side of the high-voltage side power switch element; the utility model discloses install all high pressure side power switch element in an area of lead frame, install all low pressure side power switch element in another area of lead frame, can specifically see the drawing and lay out the figure, reach the effect that improves the detection sensitivity of overheat protection component. This is the utility model discloses preferred technique can embody the utility model discloses an inventiveness, and prior art installs temperature element on the outside circuit board of IPM, estimates power element's temperature in the power module by the backstepping of outside temperature measurement result through temperature scaling, and feedback control component and output signal give drive element to carry out power element's shutoff. One of the two obvious disadvantages is that the distance between the temperature detection module and the power element inside the module is long, and the difference between the detected temperature and the actual temperature is large according to the relationship between the temperature radiation and the distance, so that a low temperature protection threshold value needs to be set; in addition, the external temperature detection element and the power element are not in the same packaging body, and the external temperature detection element and the power element are easily subjected to the change of the whole environmental temperature of the circuit board, so that the opportunity of starting the temperature protection function is increased, and the working efficiency of the power module and the whole system is influenced. The utility model discloses creative encapsulate temperature element and power component in same packaging body and be close to high pressure side power component and arrange, it is little with the actual temperature difference to detect the temperature, can in time detect the temperature climb and accurate feedback after the power switch component generates heat to control element, through the action of drive element shutoff power switch component, protect this intelligent power module because of the temperature produces the damage unusually, improved this intelligent power module's reliability.
In the utility model, the number of the high-voltage side power switch elements is 1-10; the number of the low-voltage side power switch elements is 1-10, and preferably, the number of the high-voltage side power switch elements is 3; the number of the low-voltage side power switch elements is 3.
In the utility model, the plastic package is a full-package plastic package or a half-package plastic package; when the plastic package is a semi-packaged plastic package, the heat dissipation intelligent power semiconductor module further comprises a heat dissipation substrate; the heat dissipation substrate is connected with the heat dissipation surface of the lead frame in an adhesive manner; when the plastic package is a full-encapsulation plastic package, the lead frame is of a convex structure, the opening of the convex structure faces the inner lower end of the plastic package, and all elements are bonded to the upper surface of the opening of the convex structure. Further preferably, when the plastic package is a half-packaged plastic package, the heat dissipation intelligent power semiconductor module further comprises a heat dissipation substrate, the lead frame is of a convex structure, an opening of the convex structure faces to the inner lower end of the plastic package, all elements are bonded to the upper surface of the opening of the convex structure, and the heat dissipation substrate is bonded to the upper surface of the convex structure. The depth of the convex structure is not particularly limited, the utility model reduces the distance between the radiating surface of the lead frame and the upper surface of the packaging shell through the design of the convex structure, thereby improving the radiating effect and simultaneously meeting the requirement of insulation; the heat dissipation substrate comprises an insulated aluminum substrate, a ceramic substrate or a ceramic/copper composite substrate, is made of the existing material, can protect the lead frame on one hand, and can ensure the heat dissipation effect on the other hand; the heat dissipation plate can be attached to the heat dissipation surface of the lead frame by using the existing heat conduction glue. The plastic package shell and the package of the utility model are the prior art, and the heat dissipation efficiency can be effectively improved by adjusting the thickness of the plastic package shell of the fully packaged heat dissipation surface; furthermore, by adopting a semi-encapsulation mode, the radiating efficiency of the module can be improved to a greater extent on the basis of the same packaging appearance by utilizing radiating substrates made of different materials, such as an insulating aluminum substrate, a ceramic substrate or a ceramic/copper metal composite substrate, and the module is upward compatible with products with higher power, so that the module has remarkable significance for large-scale mass production and cost optimization of domestic semiconductor power modules.
The utility model discloses in, the length of moulding the encapsulation piece is not more than 22 millimeters, and the width is not more than 11 millimeters, and thickness is not more than 2 millimeters, encapsulates overall dimension promptly and is not more than 22 x 11 x 2. This is one of the creativity of the utility model, this structure has embodied the minimum rank of current plastic envelope, and is known to public, and to large size IPM, because its inner space is enough and use to paste the dress method various, the means that can take is more to the heat dissipation, but to this minimum rank IPM packaging structure, prior art does not have suitable method to satisfy the heat dissipation demand at present, can only protect life through restricting operating time and intensity to sacrifice working property, has very obviously restricted the performance of module performance. The utility model discloses on very complicated component integration basis, added the temperature test component again, simultaneously through lead frame structure new design, not only can be accurate, sensitive test module inside temperature, in time effective transmission order, avoided increasing the module that the component brought moreover and generate heat bigger, the problem that the heat dissipation is more difficult.
In the utility model, the control element, the driving element and the power switch element are connected in sequence; the temperature detection component is connected with the control element, the utility model discloses an installation of all components and connection separately all belong to current method, and the combination mode of heat dissipation intelligent power semiconductor module and current heat abstractor, circuit board all is prior art.
The utility model discloses add temperature detection component on the lead frame, can detect power switch element's the temperature that generates heat, feed back to control element when judging as overheated, stop power switch element's action, the utility model discloses can carry on different types of drive IC and realize arranging of different power switch element, specifically, when adopting single integrated low pressure drive element and single integrated high pressure drive element, high pressure side power switch element, low pressure side power switch element are located the lead frame both sides respectively, and temperature detection component is located high pressure side power switch element one side and preferably is located the centre; when a plurality of integrated high and low voltage drive elements are used, the high side and low side power elements are arranged alternately, and the temperature sensing element is located in the middle of the lead frame, preferably near the high side power switching element. The specific electrical connection and control is the existing method. In addition, when the driving element is a single integrated high-low voltage driving element, the integrated high-low voltage driving element is electrically connected to the power switching element through the wiring element to drive the power switching elements of the high-voltage side and the low-voltage side, and the integrated high-low voltage driving element is connected to the high-voltage side power switching element and/or the low-voltage side power switching element through the wiring element, which is advantageous for the micro-scale SSOP package lead frame wiring. The calorific capacity of high pressure side power switch component is bigger, the utility model discloses preferably install temperature detection component near high pressure side power switch component, in time detect power switch component's calorific capacity and feed back to controlling element, judge when the temperature is overheated according to feedback signal when controlling element, through the action that driving element stopped power switch component, protect this intelligent power module and produce the damage because of the temperature is unusual, improved this intelligent power module's reliability.
The utility model discloses with the chip face of lead frame (adorning various components) down, then the lead frame cooling surface is in the internal top of plastic-sealed, combines customer end mounting means, and this IPM pastes back on the circuit board, and the cooling surface is in (being located) upper end, can directly external heat abstractor, and heat abstractor's heat radiating area is bigger, and the heat radiation effect is better, can be for external water cooling device, through the more quick reduction product temperature of circulating water cooling device, reaches better radiating effect.
The utility model discloses can adopt the vertical structure of encapsulation of multiple difference to effectively release the heat that is produced by this semiconductor module to this heat dissipation requirement that satisfies the product. Specifically, adopt the form of full encapsulation, namely lead frame and all components are encapsulated by epoxy, the heat is transmitted outwards through epoxy, so the heat radiation efficiency and the heat release efficiency of this product have been decided to the epoxy thickness between the product heating area and the external radiator, the utility model discloses through locating the lead frame cooling surface above the internal portion of plastic-sealed body reducing the distance of frame to the plastic-sealed body top (namely reducing the thickness of epoxy) and improving the radiating efficiency of product; or a semi-encapsulation form is adopted, namely, the epoxy resin for packaging partially surrounds the lead frame and all elements, and the lower surface (the surface without the elements) of the lead frame made of high heat-conducting materials for heat dissipation is exposed, preferably, a ceramic sheet or a plurality of layers of metal heat dissipation plates can be pasted on the smooth surface of the lead frame for heat dissipation and protection; therefore, the utility model discloses a product heat-sinking capability's improvement can satisfy the product demand of higher voltage, electric current.
Drawings
FIG. 1 is a schematic diagram of a lead frame and device structure according to an embodiment;
FIG. 2 is a schematic diagram showing the circuit relationship among the elements according to one embodiment;
FIG. 3 is a schematic diagram of a package structure according to an embodiment;
FIG. 4 is a diagram illustrating a second embodiment of a lead frame and a device structure;
FIG. 5 is a schematic diagram showing the circuit relationship of the second embodiment;
FIG. 6 is a schematic view of a three-package structure according to an embodiment;
FIG. 7 is a diagram illustrating a fourth package structure according to an embodiment;
FIG. 8 is a schematic diagram of a fifth package structure according to an embodiment;
FIG. 9 is a schematic diagram showing the circuit relationship among six elements according to the embodiment;
FIG. 10 is a schematic diagram of a seventh exemplary embodiment of a heat-dissipating smart power semiconductor device;
FIG. 11 is a schematic diagram of an eight-heat dissipation intelligent power control architecture according to an embodiment;
FIG. 12 is a diagram of a prior art smart power control architecture;
the lead frame comprises a lead frame 1, a control element 2, a temperature detection element 3, a plastic package shell 4, an external lead 5, an integrated high-low voltage driving element 6, a high-voltage side power switching element 7, a low-voltage side power switching element 8, an integrated low-voltage driving element 9, an integrated high-voltage driving element 10, a high-heat-conducting substrate 11, a wiring element 12, a heat dissipation device 13, a heat dissipation device 14, a circuit board 15 and an integrated high-low voltage driving element 16.
Detailed Description
Example one
See figures 1-3; a heat dissipation intelligent power semiconductor module based on micro-scale SSOP packaging comprises a lead frame 1, a control element 2, a driving element, a power switch element, a temperature detection element 3, a plastic package shell 4 and an external lead 5, wherein the control element, the driving element, the power switch element and the temperature detection element are all bonded on the lead frame; the driving elements comprise 3 integrated high-low voltage driving elements 6; the power switch elements comprise 3 high-voltage side power switch elements 7 and 3 low-voltage side power switch elements 8; the plastic package is a full-package plastic package; the heat dissipation surface of the lead frame is positioned at the upper end inside the plastic package shell, the length of the plastic package shell is not more than 22 mm, the width of the plastic package shell is not more than 11 mm, the thickness of the plastic package shell is not more than 2 mm (the package overall dimension is not more than 22 multiplied by 11 multiplied by 2), the lead frame, the control element, the driving element, the power switch element and the temperature detection element are positioned inside the plastic package shell, and the external lead is positioned outside the plastic; when 3 integrated high-low voltage driving elements (2 in 1) are adopted, high-voltage side and low-voltage side power elements are alternately arranged, and a temperature detection element is positioned in the middle of a lead frame and is close to a high-voltage side power switch element; the control element, the driving element and the power switch element are connected in sequence; the temperature detection element is connected with the control element, and the specific connection is conventional connection; the circuit prepared in the drawing is a conventional method, does not influence the technical understanding of the utility model, the same elements are marked on one part, the elements in fig. 3 are not marked, and the lead frame faces downwards to form a chip surface.
Example two
See fig. 4-5; a heat dissipation intelligent power semiconductor module based on micro-scale SSOP packaging comprises a lead frame 1, a control element 2, a driving element, a power switch element, a temperature detection element 3, a plastic package shell 4 and an external lead 5, wherein the control element, the driving element, the power switch element and the temperature detection element are all positioned on the lead frame; the driving elements comprise 1 integrated low-voltage driving element 9 and 1 integrated high-voltage driving element 10; the power switch elements comprise 3 high-voltage side power switch elements 7 and 3 low-voltage side power switch elements 8, the high-voltage side power switch elements and the low-voltage side power switch elements are respectively positioned at two sides of the lead frame, and the temperature detection element is positioned at one side of the high-voltage side power switch elements and in the middle of the high-voltage side power switch elements; the plastic package is a full-packaging plastic package, and the packaging structure is the same as that of the first embodiment (as shown in FIG. 3); the heat dissipation surface of the lead frame is positioned at the upper end inside the plastic package shell, the length of the plastic package shell is not more than 22 mm, the width of the plastic package shell is not more than 11 mm, the thickness of the plastic package shell is not more than 2 mm (the package overall dimension is not more than 22 multiplied by 11 multiplied by 2), the lead frame, the control element, the driving element, the power switch element and the temperature detection element are positioned inside the plastic package shell, and the external lead is positioned outside the plastic; the control element, the driving element and the power switch element are connected in sequence; the temperature detection element is connected with the control element, and the specific connection is a conventional connection.
EXAMPLE III
See fig. 6; a heat dissipation intelligent power semiconductor module based on micro-scale SSOP packaging comprises a lead frame 1, a control element, a driving element, a power switch element, a temperature detection element, a plastic package shell 4 and an external lead, wherein the control element, the driving element, the power switch element and the temperature detection element are all positioned on the lead frame and are adhered to the upper surface of an opening of a convex structure; layout is as same as the embodiment; the driving elements comprise 3 integrated high-low voltage driving elements; the power switch elements comprise 3 high-voltage side power switch elements and 3 low-voltage side power switch elements; when 3 integrated high-low voltage driving elements (2 in 1) are adopted, high-voltage side and low-voltage side power elements are alternately arranged, and a temperature detection element is positioned in the middle of a lead frame and is close to a high-voltage side power switch element; the plastic package is a full-package plastic package; the heat dissipation surface of the lead frame is positioned at the upper end inside the plastic package shell, the lead frame is of a convex structure, the opening faces the lower part inside the plastic package shell, the thickness of epoxy resin on a heat dissipation layer is reduced by bending the lead frame, so that the overall heat dissipation performance of the module is improved, and the structure does not need to change an external lead and keeps the connection strength; the length of the plastic package is not more than 22 mm, the width is not more than 11 mm, the thickness is not more than 2 mm (the package external dimension is not more than 22 multiplied by 11 multiplied by 2), the lead frame, the control element, the driving element, the power switch element and the temperature detection element are positioned in the plastic package, and the external lead is positioned outside the plastic package; the control element, the driving element and the power switch element are connected in sequence; the temperature detection element is connected with the control element, and the specific connection is a conventional connection.
Example four
See fig. 7; a heat dissipation intelligent power semiconductor module based on micro-scale SSOP packaging comprises a lead frame 1, a control element, a driving element, a power switch element, a temperature detection element, a plastic package shell 4 and an external lead 5, wherein the control element, the driving element, the power switch element and the temperature detection element are all positioned on the lead frame, and the layout is one-to-one with the embodiment; the driving elements comprise 3 integrated high-low voltage driving elements 6; the power switch elements comprise 3 high-voltage side power switch elements 7 and 3 low-voltage side power switch elements 8; when 3 integrated high-low voltage driving elements (2 in 1) are adopted, high-voltage side and low-voltage side power elements are alternately arranged, and a temperature detection element is positioned in the middle of a lead frame and is close to a high-voltage side power switch element; the plastic package is a semi-packaged plastic package, the radiating surface of the lead frame is positioned at the upper end inside the plastic package, and the radiating surface of the lead frame is attached to the high-thermal-conductivity insulating substrate 11 which is a ceramic substrate; the length of the plastic package is not more than 22 mm, the width is not more than 11 mm, the thickness is not more than 2 mm (the package external dimension is not more than 22 multiplied by 11 multiplied by 2), the lead frame, the control element, the driving element, the power switch element and the temperature detection element are positioned in the plastic package, and the external lead is positioned outside the plastic package; the control element, the driving element and the power switch element are connected in sequence; the temperature detection element is connected with the control element, and the specific connection is a conventional connection.
EXAMPLE five
See fig. 8; a heat dissipation intelligent power semiconductor module based on micro-scale SSOP packaging comprises a lead frame 1, a control element, a driving element, a power switch element, a temperature detection element, a plastic package shell 4 and an external lead, wherein the control element, the driving element, the power switch element and the temperature detection element are all positioned on the lead frame, are adhered to the upper surface of an opening of a convex structure and are positioned in the convex structure; layout is as same as the embodiment; the driving elements comprise 3 integrated high-low voltage driving elements; the power switch elements comprise 3 high-voltage side power switch elements and 3 low-voltage side power switch elements; when 3 integrated high-low voltage driving elements (2 in 1) are adopted, high-voltage side and low-voltage side power elements are alternately arranged, and a temperature detection element is positioned in the middle of a lead frame and is close to a high-voltage side power switch element; the plastic package is a semi-packaged plastic package, the radiating surface of the lead frame is positioned at the upper end inside the plastic package, the radiating surface of the lead frame is attached to the high-heat-conductivity insulating substrate 11 which is a ceramic substrate, and the radiating substrate is connected with the upper surface of the convex structure in an adhesive manner; the heat dissipation surface of the lead frame is positioned at the upper end inside the plastic package shell, the lead frame is of a convex structure, the opening faces the lower part inside the plastic package shell, the thickness of epoxy resin on a heat dissipation layer is reduced by bending the lead frame, so that the overall heat dissipation performance of the module is improved, and the structure does not need to change an external lead and keeps the connection strength; the length of the plastic package is not more than 22 mm, the width is not more than 11 mm, the thickness is not more than 2 mm (the package external dimension is not more than 22 multiplied by 11 multiplied by 2), the lead frame, the control element, the driving element, the power switch element and the temperature detection element are positioned in the plastic package, and the external lead is positioned outside the plastic package; the control element, the driving element and the power switch element are connected in sequence; the temperature detection element is connected with the control element, and the specific connection is a conventional connection.
EXAMPLE six
See fig. 9; a heat dissipation intelligent power semiconductor module based on a micro-scale SSOP package comprises a lead frame, a control element 2, a driving element, a power switch element, a temperature detection element 3, a plastic package, an external lead and a wiring element 12, wherein the wiring element, the control element, the driving element, the power switch element and the temperature detection element are all positioned on the lead frame; the driving elements comprise 1 integrated high-low voltage driving element 16 which is 6-in-1 integrated; the power switch elements comprise 3 high-voltage side power switch elements 7 and 3 low-voltage side power switch elements 8, the high-voltage side power switch elements and the low-voltage side power switch elements are respectively positioned on two sides of the lead frame, and the temperature detection elements are positioned on one side of the high-voltage side power switch elements; the plastic package is a full-package plastic package, and the package structure is similar to the embodiment; the heat dissipation surface of the lead frame is positioned at the upper end of the interior of the plastic package shell, the length of the plastic package shell is not more than 22 mm, the width of the plastic package shell is not more than 11 mm, the thickness of the plastic package shell is not more than 2 mm (the package overall dimension is not more than 22 multiplied by 11 multiplied by 2), the lead frame, the control element, the driving element, the power switch element, the temperature detection element and the wiring element are positioned in the plastic package shell, and the external lead is; the control element, the driving element and the power switch element are connected in sequence; the temperature detection element is connected with the control element, and the integrated high-low voltage driving element is connected with the high-voltage side power switching element and the low-voltage side power switching element through the wiring element, wherein the connection is a conventional connection.
EXAMPLE seven
See fig. 10; the heat dissipation type intelligent power semiconductor device is obtained by attaching the heat dissipation intelligent power semiconductor module based on the micro-scale SSOP package of the second embodiment to the heat dissipation device 13 through the heat conductive adhesive, the heat dissipation device is a water-cooling heat dissipation device, and the heat dissipation device is located at the heat dissipation surface of the lead frame, which means that the heat dissipation surface of the lead frame is closer to the heat dissipation device than the chip surface (i.e. the surface on which the component is mounted) of the lead frame, thereby greatly improving the heat transfer. The combination of the heat-dissipating intelligent power semiconductor module based on the micro-scale SSOP package and the heat-dissipating device disclosed in the other embodiments is similar to the above, and various heat-dissipating intelligent power semiconductor devices can be obtained.
Example eight
Referring to fig. 11, the heat dissipation intelligent power semiconductor module based on the micro-scale SSOP package of the second embodiment is attached to the heat dissipation device 14 by a thermal conductive adhesive, and is mounted on the existing circuit board 15 by the existing surface mounting technology to obtain a heat dissipation type intelligent power control structure, the heat dissipation device is an air-cooled heat dissipation device, the heat dissipation intelligent power semiconductor module is positioned between the circuit board and the heat dissipation device, wherein the height of the heat sink from the lead frame is less than the height of the circuit board from the lead frame, that is, the heat sink is located at the heat dissipation surface of the lead frame, the chip surface of the lead frame faces the circuit board, this is relative to the die side of the leadframe (i.e., the side on which the component is mounted), which means that the heat spreading side of the leadframe is closer to the heat sink than the die side, which is quite the opposite of the prior art (see fig. 12), thereby greatly improving heat transfer. The combination of the heat dissipation intelligent power semiconductor module based on the micro-level SSOP package disclosed in other embodiments with the heat dissipation device and the circuit board is similar to that described above, and various heat dissipation type intelligent power control structures can be obtained.
The utility model discloses heat dissipation intelligent power semiconductor module integrated level based on small rank SSOP encapsulation is high, has integrateed control element (MCU), drive element, power switch component, temperature detection element simultaneously, and packaging structure is little, assembly process is simple, through a plurality of circuit element of high density of integration, has reduced the volume of intelligent power semiconductor module and terminal product, has reduced the use cost of this module and has improved the reliability of product. Particularly, the temperature detection element is integrated in the module and is close to the power element, the feedback is accurate, and compared with the existing temperature control structure, the temperature protection threshold values of the first embodiment and the second embodiment are respectively increased by 10 ℃ and 14 ℃, so that the running efficiency of the motor is improved; in addition, because the integration level is higher than that of the prior art, the size of a circuit board of the terminal system is reduced, the cost is saved by nearly 8%, and the method has remarkable significance in the field of white household appliances with increasingly strong competition. The utility model discloses the practical application of heat dissipation intelligent power semiconductor module combination customer end has optimized the cooling surface design, has improved the heat-sinking capability of product, sees from power switch owing to reach the time that the temperature threshold value stops working to heat dissipation cooling recovery work, compares in prior art's SSOP packaging structure, the utility model discloses embodiment one is 76% of current structure, and embodiment three is 68% of current structure, and embodiment four is 65% of current structure, and embodiment five is 59% of current structure to satisfy the heat dissipation requirement of higher current, higher power product; the heat generated by the semiconductor module can be effectively released by deriving various different packaging longitudinal structures according to different powers and heat productivity of the carried power switch element, so that the heat dissipation requirements of products and terminal systems are met, more importantly, the structure of the utility model can ensure that the heat dissipation intelligent power semiconductor module packaged based on the SSOP of the micro-grade can reach 200W of working power and the working time is not influenced, and the structure of the intelligent power semiconductor module packaged by the SSOP can only reach 40W generally; the practical meaning of the utility model is not changing module encapsulation overall dimension, need not change customer end circuit board overall arrangement promptly and just can realize the compatibility to the higher power product, be favorable to the large-scale volume production between the upper and lower reaches to reduce whole manufacturing cost, promote the continuous competitiveness of internal white household electrical appliances firm.

Claims (10)

1. A heat dissipation type intelligent power semiconductor device based on micro-scale SSOP packaging is characterized in that: the heat dissipation type intelligent power semiconductor device based on the micro-scale SSOP packaging comprises a heat dissipation intelligent power semiconductor module based on the micro-scale SSOP packaging and a heat dissipation device; the heat dissipation intelligent power semiconductor module based on the micro-scale SSOP packaging comprises a lead frame, a control element, a driving element, a power switch element, a temperature detection element, a plastic package and an external lead; the control element, the driving element, the power switch element and the temperature detection element are all positioned on the lead frame; the heat dissipation device is located at the heat dissipation surface of the lead frame.
2. The micro-scale SSOP package-based heat dissipating smart power semiconductor device of claim 1, wherein: the driving element comprises an integrated low-voltage driving element, an integrated high-voltage driving element or an integrated high-voltage and low-voltage driving element; the power switch elements comprise a high-voltage side power switch element and a low-voltage side power switch element.
3. The micro-scale SSOP package-based heat-dissipating smart power semiconductor device of claim 2, wherein: the high-voltage side power switch element and the low-voltage side power switch element are respectively positioned on two sides of the lead frame; the temperature detection element is positioned on one side of the high-voltage side power switch element.
4. The micro-scale SSOP package-based heat-dissipating smart power semiconductor device of claim 2, wherein: 1-10 high-voltage side power switch elements are arranged; the number of the low-voltage side power switch elements is 1-10.
5. The micro-scale SSOP package-based heat-dissipating smart power semiconductor device of claim 2, wherein: when the driving element is an integrated high-voltage and low-voltage driving element, the heat dissipation intelligent power semiconductor module based on the micro-scale SSOP package further comprises a wiring element; the wiring element is bonded to the lead frame.
6. The micro-scale SSOP package-based heat dissipating smart power semiconductor device of claim 1, wherein: the plastic package is a full-package plastic package or a half-package plastic package; the heat dissipation surface of the lead frame is positioned at the upper end of the inner part of the plastic package; the plastic capsule has an overall length of no more than 22 mm, a width of no more than 11 mm and a thickness of no more than 2 mm.
7. The micro-scale SSOP package-based heat-dissipating smart power semiconductor device of claim 6, wherein: when the plastic package is a semi-packaged plastic package, the heat dissipation intelligent power semiconductor module further comprises a heat dissipation substrate, and the heat dissipation substrate is connected with the heat dissipation surface of the lead frame in an adhesive manner; when the plastic package is a full-encapsulation plastic package, the lead frame is of a convex structure, and the opening of the convex structure faces the inner lower end of the plastic package.
8. The micro-scale SSOP package-based heat-dissipating smart power semiconductor device of claim 7, wherein: all elements are located on the open upper surface of the male structure.
9. The micro-scale SSOP package-based heat dissipating smart power semiconductor device of claim 1, wherein: the heat dissipation device is an air cooling heat dissipation device or a water cooling heat dissipation device.
10. The micro-scale SSOP package-based heat dissipating smart power semiconductor device of claim 1, wherein: the control element, the driving element and the power switch element are connected in sequence; the temperature detection element is connected with the control element; the lead frame, the control element, the driving element, the power switch element and the temperature detection element are positioned in the plastic package shell; the external lead is positioned outside the plastic package shell.
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