CN210262077U - Polycrystalline silicon ingot furnace structure convenient for impurity removal - Google Patents
Polycrystalline silicon ingot furnace structure convenient for impurity removal Download PDFInfo
- Publication number
- CN210262077U CN210262077U CN201920811097.2U CN201920811097U CN210262077U CN 210262077 U CN210262077 U CN 210262077U CN 201920811097 U CN201920811097 U CN 201920811097U CN 210262077 U CN210262077 U CN 210262077U
- Authority
- CN
- China
- Prior art keywords
- thermal
- miscellaneous
- cage
- polycrystalline silicon
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Silicon Compounds (AREA)
Abstract
The utility model relates to a polycrystalline silicon ingot furnace structure convenient to arrange miscellaneous in polycrystal ingot furnace field, the induction cooker comprises a cooker bod, be equipped with thermal-insulated cage in the furnace body, the inside of thermal-insulated cage is equipped with heat exchange platform, be provided with the crucible on the heat exchange platform, be equipped with the heater in the thermal-insulated cage week, thermal-insulated cage periphery is equipped with graphite heat preservation cover, a plurality of mounting holes that are used for the inner structure installation are seted up at graphite heat preservation cover's top, the position that the upper portion of graphite heat preservation cover side direction is less than crucible suitable for reading edge is equipped with a plurality of miscellaneous holes of row, the maximum aperture in miscellaneous hole of row is 3 ~ 6cm, the position in miscellaneous hole of row avoids thermal-insulated cage's cage bone position and communicates with the. The utility model discloses a polycrystalline silicon ingot furnace structure convenient to arrange miscellaneous, through arrange miscellaneous hole timely will melt and long brilliant time production impurity discharge melt surface to effectual reduction purification spindle head impurity pile up, reduce the infrared shadow area in top, improve minority carrier lifetime.
Description
Technical Field
The utility model relates to a polycrystal ingot furnace field, in particular to polycrystalline silicon ingot furnace structure convenient to arrange miscellaneous.
Background
In the prior art, when a polycrystalline silicon ingot furnace carries out purification material ingot casting, because impurities in the purification material are obviously more than impurities in the high-purity ingot casting material, the purification material is heated, melted, annealed for growing crystal and cooled in a crucible of the polycrystalline ingot furnace. In the process, when the silicon material reaches the melting point and begins to melt, impurities in the completely melted silicon liquid are mainly precipitated at the bottom of the crucible or float on the liquid level, the precipitated material at the bottom is directly cut off after being cooled, the crucible is used for treating the relatively closed heat insulation cover, if the liquid level floats and cannot be drained timely, the impurities on the surface of the silicon liquid are more, the impurities at the head of the finally cooled purified ingot casting mostly need to be cut, the unqualified flaw-piece section is overlong, and the qualified product rate of the purified ingot is finally low.
SUMMERY OF THE UTILITY MODEL
The utility model discloses when carrying out the purification material ingot casting through polycrystalline silicon ingot furnace among the prior art, purification ingot material head impurity is many, and the problem of flaw-piece section overlength provides a polycrystalline silicon ingot furnace structure convenient to arrange miscellaneous, outside making the purification material melt the showy impurity of back liquid level in time discharge crucible, reduce the piling up of purification ingot head impurity, improve the qualification rate of purification ingot.
The utility model discloses an mesh realizes like this, a polycrystalline silicon ingot furnace structure convenient to arrange miscellaneous, which comprises a furnace body, be equipped with thermal-insulated cage in the furnace body, thermal-insulated cage's inside is equipped with heat exchange platform, be provided with the crucible on the heat exchange platform, be equipped with the heater in the thermal-insulated cage week, thermal-insulated cage periphery is equipped with graphite heat preservation cover, a plurality of mounting holes that are used for the inner structure installation are seted up at graphite heat preservation cover's top, a serial communication port, the position that the upper portion of graphite heat preservation cover side direction is less than crucible suitable for reading edge is equipped with a plurality of miscellaneous holes of row, the maximum aperture in miscellaneous hole of row is 3 ~ 6cm, the position in miscellaneous hole of row avoids thermal-insulated cage's cage bone position and communicates with the furnace body inner chamber.
The utility model discloses a polycrystalline silicon ingot furnace structure sets up a plurality of row's miscellaneous holes at the first portion of graphite heat preservation cover, increases the circulation of the heat-insulating cage inside and outside, melts the in-process surface floating impurity and can take away from the silicon liquid surface under great gas flow state as the silicon material, is taken away from impurity partly can be through taking a breath in the furnace chamber discharge ingot furnace, and another part can adhere on the furnace chamber wall, and this department can clear away as long as clear up the furnace chamber wall after going out of the stove promptly. Therefore, the utility model discloses a polycrystalline silicon ingot furnace structure convenient to arrange miscellaneous, through the setting in row miscellaneous hole, the impurity that will melt and produce when long brilliant that can be timely discharges the meltwater surface to discharge through row miscellaneous hole and take out the stove outside or adsorb in the furnace chamber inner wall, thereby the piling up of effectual reduction purification ingot head impurity reduces the infrared shadow area in top, improves minority carrier lifetime.
Furthermore, the graphite heat preservation cover includes roof, bottom plate and encloses the graphite curb plate that closes the setting all around, has arranged at least one row miscellaneous hole on the graphite curb plate of every side.
Preferably, the impurity discharging holes are round holes, polygonal holes or elliptical holes.
Drawings
FIG. 1 is a schematic structural view of the polysilicon ingot furnace convenient for impurity removal.
Fig. 2 is a schematic structural diagram of a graphite heat-insulating cover.
Wherein, 1, a furnace body; 2, a heat insulation cage; 3, a graphite heat-preservation cover; 4, arranging impurity holes; 5, a crucible; 6 heat exchange platform.
Detailed Description
As shown in figures 1 and 2, the polysilicon ingot furnace convenient for impurity removal of the utility model comprises a furnace body 1, a heat insulation cage 2 is arranged in the furnace body 1, a heat exchange platform 6 is arranged in the heat insulation cage 2, a crucible 5 is arranged on the heat exchange platform 6, a heater is arranged on the inner periphery of the heat insulation cage 2, a graphite heat preservation cover 3 is arranged on the outer periphery of the heat insulation cage 2, this graphite heat preservation cover 3 includes the roof, the bottom plate and enclose the graphite curb plate that closes the setting all around, a plurality of mounting holes that are used for the inner structure installation are seted up to the roof of graphite heat preservation cover 3, the position that the upper portion of every graphite curb plate of graphite heat preservation cover 3 is less than 5 suitable for reading edges of crucible is equipped with one row miscellaneous hole 4 at least, the shape in row miscellaneous hole 4 can be the round hole, polygonal hole or elliptical hole, the maximum aperture in every hole is 3 ~ 6cm, need avoid the cage bone position of thermal-insulated cage 2 and communicate with the furnace body inner chamber in the graphite heat preservation cover outside when arranging the position in row miscellaneous hole 4.
The utility model discloses a polycrystalline silicon ingot furnace structure, arrange miscellaneous hole 4 in first half setting of graphite heat preservation cover 3, make originally keep apart the furnace chamber space intercommunication in the crucible in thermal-insulated cage 2 through arranging miscellaneous hole and the outside, increase the circulation of the inside and outside of thermal-insulated cage 2, make silicon material melt the in-process surface floating impurity and can take away from the silicon liquid surface under the effect of stove interior protection flow, it can take a breath in the furnace chamber and discharge the ingot furnace from the impurity part of liquid level to be taken away, another part can adhere on the furnace chamber wall, this department is as long as clear up the furnace chamber wall after going out the stove and can clear away. Therefore, the utility model discloses a polycrystalline silicon ingot furnace structure convenient to arrange miscellaneous, through the setting in row miscellaneous hole, the impurity that will melt and produce when long brilliant that can be timely discharges the meltwater surface to discharge through row miscellaneous hole and take out the stove outside or adsorb in the furnace chamber inner wall, thereby the piling up of effectual reduction purification ingot head impurity reduces the infrared shadow area in top, improves minority carrier lifetime.
Claims (3)
1. The utility model provides a polycrystalline silicon ingot furnace structure convenient to arrange miscellaneous, includes the furnace body, be equipped with thermal-insulated cage in the furnace body, thermal-insulated cage's inside is equipped with heat exchange platform, the last crucible that is provided with of heat exchange platform, thermal-insulated cage internal periphery is equipped with the heater, thermal-insulated cage periphery is equipped with graphite heat preservation cover, a plurality of mounting holes that are used for the inner structure installation are seted up at graphite heat preservation cover's top, its characterized in that, the position that graphite heat preservation cover side direction upper portion is less than crucible suitable for reading edge is equipped with a plurality of miscellaneous holes of row, the maximum aperture in miscellaneous hole of row is 3 ~ 6cm, the position in miscellaneous hole of row avoids thermal-insulated cage's cage bone position and communicates with the furnace body inner.
2. The polycrystalline silicon ingot furnace structure convenient for impurity removal according to claim 1, wherein the graphite heat-insulating cover comprises a top plate, a bottom plate and graphite side plates which are arranged in a surrounding manner, and at least one impurity removal hole is arranged on the graphite side plate on each side.
3. The polycrystalline silicon ingot furnace structure convenient for impurity removal according to claim 2, wherein the impurity removal holes are round holes, polygonal holes or elliptical holes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920811097.2U CN210262077U (en) | 2019-05-31 | 2019-05-31 | Polycrystalline silicon ingot furnace structure convenient for impurity removal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920811097.2U CN210262077U (en) | 2019-05-31 | 2019-05-31 | Polycrystalline silicon ingot furnace structure convenient for impurity removal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210262077U true CN210262077U (en) | 2020-04-07 |
Family
ID=70040332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920811097.2U Expired - Fee Related CN210262077U (en) | 2019-05-31 | 2019-05-31 | Polycrystalline silicon ingot furnace structure convenient for impurity removal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210262077U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111394790A (en) * | 2020-04-26 | 2020-07-10 | 新余学院 | Low-impurity polycrystalline silicon ingot furnace |
| CN112064113A (en) * | 2020-10-22 | 2020-12-11 | 新余学院 | Polycrystalline silicon ingot furnace convenient to get rid of impurity layer |
-
2019
- 2019-05-31 CN CN201920811097.2U patent/CN210262077U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111394790A (en) * | 2020-04-26 | 2020-07-10 | 新余学院 | Low-impurity polycrystalline silicon ingot furnace |
| CN112064113A (en) * | 2020-10-22 | 2020-12-11 | 新余学院 | Polycrystalline silicon ingot furnace convenient to get rid of impurity layer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN210262077U (en) | Polycrystalline silicon ingot furnace structure convenient for impurity removal | |
| ES2432573T3 (en) | Purification procedure of metallurgical silicon by directed solidification | |
| RU2011101453A (en) | SYSTEMS AND METHODS OF GROWING SINGLE CRYSTAL SILICON BARS BY DIRECTIONAL CURING | |
| CN102934239B (en) | The height of polycrystal silicon ingot used for solar batteries exports manufacturing equipment | |
| CN102268724A (en) | Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell | |
| TWI493082B (en) | Method of fabricating crystalline silicon ingot | |
| CN102877117A (en) | Ingot furnace thermal field structure based on multi-heater and operation method | |
| CN102732959A (en) | Polysilicon ingot furnace and polysilicon ingot casting method | |
| CN102517634A (en) | Air-flow control structure of polysilicon ingot furnace and application method thereof | |
| CN101775641A (en) | Follow-up heat insulation ring thermal field structure for vertical oriented growth of polysilicon | |
| CN103255475A (en) | Silicon crystal ingot containing nucleation promoting particles and method for producing same | |
| CN202989351U (en) | Ingot furnace thermal field structure based on multiple heaters | |
| CN103122482B (en) | Prepare the method and apparatus of high-purity polycrystalline silicon | |
| CN107794568A (en) | A kind of crystal oven for polycrystalline silicon casting ingot process | |
| CN109208072B (en) | Crystallization method for improving crystal flowers at bottom of polycrystalline silicon ingot | |
| CN102965727A (en) | Polycrystalline silicon ingot and casting method thereof | |
| CN201495107U (en) | Polycrystal furnace with high-quality purification polysilicon | |
| CN201138138Y (en) | Polycrystalline silicon segregating and cogging furnace without need of moving component | |
| CN103225106B (en) | A kind of thermal field casting high-efficiency polycrystalline | |
| CN113502531A (en) | Multi-partition-zone ingot casting monocrystalline silicon growth equipment and method with adjustable vertical temperature gradient | |
| CN102653881A (en) | Method for casting large-grained silicon ingot | |
| CN207347695U (en) | Polycrystal silicon ingot ingot casting furnace superintendent crystalline substance soaking crucible structure | |
| TWI452184B (en) | Method of manufacturing crystalline silicon ingot | |
| CN206188926U (en) | High -efficient hot exchange platform of polycrystalline silicon ingot furnace and ingot furnace | |
| KR101139846B1 (en) | The apparatus equipped with effective insulating/protection plates for manufacturing of the polycrystalline silicon ingot for solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200407 Termination date: 20210531 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |