CN210142649U - Packaging structure of power semiconductor device - Google Patents
Packaging structure of power semiconductor device Download PDFInfo
- Publication number
- CN210142649U CN210142649U CN201921225609.3U CN201921225609U CN210142649U CN 210142649 U CN210142649 U CN 210142649U CN 201921225609 U CN201921225609 U CN 201921225609U CN 210142649 U CN210142649 U CN 210142649U
- Authority
- CN
- China
- Prior art keywords
- frame
- power semiconductor
- metal
- metal core
- core carrying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The utility model provides a power semiconductor device's packaging structure, including metal core carrying board frame, device pin frame, the frame plastic-sealed body and semiconductor chip, will device pin frame stack in back, every on the metal core carrying board frame the upper end of device pin with correspond the metal core carrying board reaches semiconductor chip contacts, the whole cladding of frame plastic-sealed body is two rows of being connected in the butt joint after the coincide metal core carrying board and the semiconductor chip, the part that corresponds on the device pin. The utility model has the advantages of simple structure, design benefit, being convenient for manufacture and transportation, improving production efficiency, reducing production cost, etc.
Description
Technical Field
The utility model belongs to the semiconductor package field is about a power semiconductor device's packaging structure and packaging method very much.
Background
In the production of power semiconductor devices in the prior art, each metal carrier core plate is plastically packaged by using an independent plastic package body, and then a finished product of a single power semiconductor device is obtained and then is transported.
However, when each metal carrier core plate is subjected to plastic packaging independently, not only are a large number of plastic packaging molds needed under the condition of the same productivity, but also the molds are small in size and complex in structure, so that the precision requirement of the molds is improved, and the production difficulty and the production cost are correspondingly improved. In addition, the mold of the plastic package mold is easy to get out of order due to higher precision in the production process of the mold, so that the qualification rate of the finished product of the final product is difficult to improve.
And meanwhile, the capacity is low, the cost is high and the transportation and packaging volume is large when the outside cooperation tinning is carried out.
In addition, the single-row metal carrier core plate and the single-row device pins are processed, so that the processing efficiency is low, and the large-scale production is not facilitated.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a simple structure, design benefit, be convenient for manufacture and transportation, improve production efficiency, reduction in production cost's power semiconductor device's packaging structure.
In order to achieve the above purpose, the utility model adopts the following technical scheme: a packaging structure of a power semiconductor device, which packages the power semiconductor device, the power semiconductor device comprises a metal carrier core plate, a semiconductor chip and device pins, the packaging structure comprises a metal carrier core plate frame, a device pin frame, a frame plastic package body and a semiconductor chip,
the metal core carrying plate frame is formed by two rows of metal core carrying plates which are connected in an opposite-top mode, each metal core carrying plate is provided with a radiating fin, and the metal core carrying plates are connected through the radiating fins;
the device pin frame is provided with a rectangular frame, and a plurality of rows of device pins are arranged in the device pin frame;
the semiconductor chips are respectively welded on the metal carrier core plates;
after the metal core carrying plate frames are positioned and arranged in parallel, the device pin frames are positioned and stacked on the metal core carrying plate frames, and the upper end of each device pin is contacted with the corresponding metal core carrying plate and the corresponding semiconductor chip;
and each frame plastic package body integrally coats the two rows of the metal carrier core plates which are connected in an opposite-vertex mode after being overlapped, the corresponding semiconductor chips and part of the device pins, and the frame plastic package body is integrally rectangular.
Further, the metal core carrier plate frame is formed by cutting a thick metal plate, and the device lead frame is formed by stamping a metal sheet.
Further, the heat sink is provided with a mounting hole, and the metal core carrying plate frame is positioned through the mounting hole.
Furthermore, a positioning hole is formed in the frame of the device lead frame, and the device lead frame is positioned through the positioning hole.
Furthermore, the device pins at the edge positions of the two ends in the device pin frame are arranged in a single row, the adjacent device pins at the middle inner side position are arranged in a crossed manner, each row of device pins are provided with connecting ribs, and each row of device pins are fixedly connected with the rectangular frame of the device pin frame through the connecting ribs.
Furthermore, a first connecting part is arranged between two adjacent rows of the radiating fins and connected with the two rows of the radiating fins, and a second connecting part is arranged between the radiating fins arranged in the same row and connected with the radiating fins.
Furthermore, the first connecting parts are arranged at intervals, the second connecting parts are arranged on two sides of the top of the radiating fin, and the first connecting parts are correspondingly connected with the second connecting parts.
Further, the distance between the radiating fins in the same row is less than 0.5 mm.
Furthermore, the metal core-board frame, the semiconductor chip, the device lead frame and the frame plastic package body after being stacked are split into individual power semiconductor devices, the frame plastic package body is cut along the direction of the first connecting portion and the second connecting portion by a high-pressure water jet cutting machine, and then the device leads are separated by a rib cutting machine to obtain the individual power semiconductor devices.
Another object of the present invention is to provide a method for packaging a power semiconductor device, which includes the following steps:
s1, cutting the thick metal plate into metal carrier plate frame, punching the metal sheet into device lead frame,
the metal core carrying plate frame is two rows of metal core carrying plates which are connected in an opposite-top mode, each metal core carrying plate is provided with radiating fins, the metal core carrying plates are connected through the radiating fins, the radiating fins are provided with mounting holes,
the device pin frame is provided with a rectangular frame, a plurality of rows of device pins are arranged in the device pin frame, positioning holes are formed in the frame of the device pin frame, and adjacent device pins are arranged in a crossed mode;
s2, soldering a semiconductor chip on each of the metal core carrier boards on the metal core carrier board frame;
s3, positioning and fixing the metal core carrying plate frame on a workbench through the mounting holes on the radiating fins;
s4, positioning and stacking the device lead frame on the metal chip carrier board frame through the positioning holes on the device lead frame, so that the upper end of each device lead contacts with the corresponding metal chip carrier board and the corresponding semiconductor chip;
s5, integrally plastic-packaging two rows of metal carrier core plates, corresponding semiconductor chips and part of device pins which are connected in an opposite mode by adopting an integral plastic-packaging mold to form a frame plastic-packaging body, wherein the frame plastic-packaging body is integrally rectangular;
and S6, after the frame is integrally molded, cutting the frame molded body by a high-pressure water jet cutter along the direction of the first connecting part and the second connecting part, and separating the device pins by a bar cutter to obtain the individual power semiconductor device.
Compared with the prior art, the utility model discloses following beneficial effect has:
1. the structure is simple, the design is ingenious, two frames are combined and overlapped, and the large-scale production and the industrial popularization are facilitated.
2. The manufacturing is convenient, the integral plastic package structure is adopted to replace the prior single plastic package for each power semiconductor, the number of required dies is greatly reduced, the structure is simpler, and the fault tolerance rate is higher.
3. The whole production efficiency is improved, the metal carrier board frame and the device pin frame are combined and overlapped for production, the fixed asset investment is reduced, more power semiconductor devices can be produced, and a large amount of production time is saved.
4. The production cost is reduced, and a denser connection mode is adopted between the metal chip carrier plate frame and the device pin frame, including pin crossing and reduction of the distance between the metal chip carrier plates, so that the metal consumption is reduced.
Drawings
Fig. 1 is a schematic structural diagram of a package structure of a power semiconductor device according to the present invention.
Fig. 2 is a schematic structural view of the metal core carrier plate frame in fig. 1.
Fig. 3 is a schematic structural view of the metal carrier plate in fig. 2.
Fig. 4 is a schematic structural diagram of the lead frame of the device of fig. 1.
Fig. 5 is a schematic structural diagram of the frame plastic package body.
The reference signs are: the package structure comprises a metal chip carrier plate frame 20, a device lead frame 30, a frame plastic package body 40, a semiconductor chip 50, a metal chip carrier plate 21, a heat sink 22, a mounting hole 23, a first connecting portion 24, the second connecting portion 25, a rectangular frame 31, a device lead 32, a positioning hole 33 and a connecting rib 34.
Detailed Description
To further illustrate the technical means adopted and the technical effects achieved by the present invention, the following detailed description is made with reference to the accompanying drawings and examples.
Referring to fig. 1 to 5, the present invention provides a package structure of a power semiconductor device, which includes a metal chip carrier board frame 20, a device lead frame 30, a frame molding compound 40 and a semiconductor chip 50. The metal core carrying plate frame 20 is formed by two rows of metal core carrying plates 21 which are connected in an opposite-top mode, each metal core carrying plate 21 is provided with a radiating fin 22, and the metal core carrying plates 21 are connected through the radiating fins 22.
The device lead frame 30 is provided with a rectangular frame 31 and multiple rows of device leads 32 are provided in the device lead frame 30.
The semiconductor chips 50 are respectively soldered on the metal carrier boards 21.
After the metal core carrier frames 20 are arranged in parallel, the device lead frames 30 are positioned and stacked on the metal core carrier frames 20, and the upper end of each device lead 32 is in contact with the corresponding metal core carrier 21 and the corresponding semiconductor chip 50.
Each frame plastic package body 40 integrally covers two rows of the metal carrier core plates 32, the corresponding semiconductor chips 50 and part of the device pins 32 which are connected in an opposite-vertex mode after being overlapped, and the frame plastic package body 40 is integrally rectangular.
In one embodiment, the metal carrier sheet frame 20 is formed by cutting a thick sheet of metal and the device lead frame 30 is formed by stamping a thin sheet of metal. Because the metal core carrying plate frame 20 is made of a thick material, a cutting mode of two rows of opposite connection is adopted to achieve the purpose of saving materials. The device leadframe 30 itself is relatively thin and can be stamped and formed directly from a single piece of metal.
In one embodiment, the heat sink 22 is provided with mounting holes 23, and the metal core plate frame 20 is positioned on the projections set on the work table through the mounting holes 23.
In one embodiment, a first connecting portion 24 is disposed between two adjacent rows of the heat dissipation fins 22 to connect the two rows of the heat dissipation fins 22, and a second connecting portion 25 is disposed between the heat dissipation fins 22 arranged in the same row to connect the heat dissipation fins 22. The first connecting portions 24 are arranged at intervals, the second connecting portions 25 are arranged on two sides of the top of the radiating fin 22, and the first connecting portions 24 are correspondingly connected with the second connecting portions 25.
In one embodiment, the distance between the fins in the same row is less than 0.5 mm. The gap distance between the radiating fins in the same row is reduced, the number of the metal carrier plates 21 in each row can be increased under the same distance, and the working efficiency is improved.
In one embodiment, the rectangular frame 31 of the device lead frame 30 is provided with positioning holes 33, and the device lead frame 30 is positioned by the positioning holes 33 and fixed on a designated position of the worktable.
In one embodiment, the device leads 32 at the edge positions of the two ends in the device lead frame 30 are arranged in a single row, the adjacent device leads 32 at the middle inner side are arranged in a crossed manner, each row of the device leads 32 is provided with a connecting rib 34, and each row of the device leads 32 is connected and fixed with the rectangular frame 31 of the device lead frame 30 by the connecting rib 34. The device pins 32 are arranged in a crossed manner, so that material waste is reduced, and the whole production cost is reduced.
In one embodiment, the stacked and packaged metal chip carrier frame 20, the semiconductor chip 50, the device lead frame 30, and the frame plastic package body 40 are separated into individual power semiconductor devices, a high pressure water jet cutting machine is used to cut the frame plastic package body 40 along the direction of the first connecting portion 22 and the second connecting portion 23, and then a bar cutting machine is used to separate the device lead 31, so as to obtain the individual power semiconductor devices. The power semiconductor device comprises a metal carrier plate 21, a semiconductor chip 50 and a device pin 31.
The utility model also provides a packaging method of encapsulation power semiconductor device, it includes following step: s1, cutting the thick metal plate into metal carrier plate frame, punching the metal sheet into device lead frame,
the metal core carrying plate frame is two rows of metal core carrying plates which are connected in an opposite-top mode, each metal core carrying plate is provided with radiating fins, the metal core carrying plates are connected through the radiating fins, the radiating fins are provided with mounting holes,
the device pin frame is provided with a rectangular frame, a plurality of rows of device pins are arranged in the device pin frame, positioning holes are formed in the frame of the device pin frame, and adjacent device pins are arranged in a crossed mode;
s2, soldering a semiconductor chip on each of the metal core carrier boards on the metal core carrier board frame;
s3, positioning and fixing the metal core carrying plate frame on a workbench through the mounting holes on the radiating fins;
s4, positioning and stacking the device lead frame on the metal chip carrier board frame through the positioning holes on the device lead frame, so that the upper end of each device lead contacts with the corresponding metal chip carrier board and the corresponding semiconductor chip;
s5, integrally plastic-packaging two rows of metal carrier core plates, corresponding semiconductor chips and part of device pins which are connected in an opposite mode by adopting an integral plastic-packaging mold to form a frame plastic-packaging body, wherein the frame plastic-packaging body is integrally rectangular;
and S6, after the frame is integrally molded, cutting the frame molded body by a high-pressure water jet cutter along the direction of the first connecting part and the second connecting part, and separating the device pins by a bar cutter to obtain the individual power semiconductor device.
The utility model has the advantages that:
1. the utility model discloses a big plastic-sealed body frame replaces a plurality of little plastic-sealed bodies before, has reduced the degree of difficulty of technology production, has increased the fault-tolerant rate to the mould that plastic-sealed body frame adopted makes it become a whole cavity, and the volume enlarges in the cavity, and easily plastic-sealed material flows, is difficult for having the dead angle, improves the yield of product.
2. The utility model discloses in adopt metal year core plate frame takes shape to be two rows of metal year core plates of connecting to the top through cutting thick metal sheet, device pin frame passes through the punching press foil sheet and takes shape, adopts means such as cross arrangement between the device pin, all is the waste at the reduction material to reduce whole manufacturing cost.
3. The utility model discloses reduce the distance between the metal carrier core board in the well metal carrier core board frame for distance between the metal carrier core board of same row is no longer than 0.5mm, has increased the quantity of metal carrier core board under the equal distance frame in other words, has improved production efficiency.
4. The utility model discloses in need only adopt high pressure water sword cutting machine to follow with monoblock board split for solitary power semiconductor device the direction of first connecting portion and second connecting portion is right the frame plastic-sealed body cut can, the split is more convenient.
The foregoing description has disclosed fully the embodiments of the present invention. It should be noted that those skilled in the art can make modifications to the embodiments of the present invention without departing from the scope of the claims of the present invention. Accordingly, the scope of the claims of the present invention is not to be limited to the specific embodiments described above.
Claims (9)
1. A packaging structure of a power semiconductor device, which packages the power semiconductor device, wherein the power semiconductor device comprises a metal carrier core plate, a semiconductor chip and a device pin, and is characterized in that: which comprises a metal carrier plate frame, a device lead frame, a frame plastic package body and a semiconductor chip,
the metal core carrying plate frame is formed by two rows of metal core carrying plates which are connected in an opposite-top mode, each metal core carrying plate is provided with a radiating fin, and the metal core carrying plates are connected through the radiating fins;
the device pin frame is provided with a rectangular frame, and a plurality of rows of device pins are arranged in the device pin frame;
the semiconductor chips are respectively welded on the metal carrier core plates;
after the metal core carrying plate frames are positioned and arranged in parallel, the device pin frames are positioned and stacked on the metal core carrying plate frames, and the upper end of each device pin is contacted with the corresponding metal core carrying plate and the corresponding semiconductor chip;
and each frame plastic package body integrally coats the two rows of the metal carrier core plates which are connected in an opposite-vertex mode after being overlapped, the corresponding semiconductor chips and part of the device pins, and the frame plastic package body is integrally rectangular.
2. The package structure of a power semiconductor device according to claim 1, wherein: the metal core carrying plate frame is formed by cutting a thick metal plate, and the device lead frame is formed by stamping a metal sheet.
3. The package structure of a power semiconductor device according to claim 1, wherein: the heat dissipation sheet is provided with mounting holes, and the metal core carrying plate frame is positioned through the mounting holes.
4. The package structure of a power semiconductor device according to claim 1, wherein: the frame of the device pin frame is provided with a positioning hole, and the device pin frame is positioned through the positioning hole.
5. The package structure of a power semiconductor device according to claim 4, wherein: the device pin at the edge positions of two ends in the device pin frame is arranged in a single row, the adjacent device pins at the inner side position in the middle are arranged in a crossed manner, each row of device pins are provided with connecting ribs, and each row of device pins are connected and fixed with the rectangular frame of the device pin frame through the connecting ribs.
6. The package structure of a power semiconductor device according to claim 3, wherein: and a first connecting part is arranged between the two rows of adjacent connected radiating fins to connect the two rows of radiating fins, and a second connecting part is arranged between the radiating fins arranged in the same row to connect the radiating fins.
7. The package structure of a power semiconductor device according to claim 6, wherein: the first connecting parts are arranged at intervals, the second connecting parts are arranged on two sides of the top of the radiating fin, and the first connecting parts are correspondingly connected with the second connecting parts.
8. The package structure of a power semiconductor device according to claim 6, wherein: the distance between the radiating fins in the same row is less than 0.5 mm.
9. The package structure of a power semiconductor device according to claim 6, wherein: splitting the superposed metal core carrying plate frame, the semiconductor chip, the device pin frame and the frame plastic package body into individual power semiconductor devices, cutting the frame plastic package body along the directions of the first connecting part and the second connecting part by adopting a high-pressure water knife cutting machine, and separating the device pins by adopting a bar cutting machine to obtain the individual power semiconductor devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921225609.3U CN210142649U (en) | 2019-07-31 | 2019-07-31 | Packaging structure of power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921225609.3U CN210142649U (en) | 2019-07-31 | 2019-07-31 | Packaging structure of power semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210142649U true CN210142649U (en) | 2020-03-13 |
Family
ID=69736828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921225609.3U Active CN210142649U (en) | 2019-07-31 | 2019-07-31 | Packaging structure of power semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210142649U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491854A (en) * | 2019-07-31 | 2019-11-22 | 江苏明微电子有限公司 | The encapsulating structure and method of power semiconductor |
-
2019
- 2019-07-31 CN CN201921225609.3U patent/CN210142649U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491854A (en) * | 2019-07-31 | 2019-11-22 | 江苏明微电子有限公司 | The encapsulating structure and method of power semiconductor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201466022U (en) | Lead frame and chip connecting structure encapsulated with micro-patch diode | |
| CN210142649U (en) | Packaging structure of power semiconductor device | |
| US20130000872A1 (en) | Fin Heat Sink with Improved Structure and Processing Method Thereof | |
| CN210040170U (en) | High-density non-base island chip packaging structure | |
| CN210429868U (en) | Microminiature SMD TOP LED lead frame | |
| CN206250155U (en) | One kind overlapping lead frame amendment tool | |
| CN208284496U (en) | Packaging body with stacked chips | |
| CN201663150U (en) | Multi-core packaging machine | |
| CN213401186U (en) | Lead frame with stress release structure and packaging material sheet | |
| CN110993786B (en) | Processing technology of multi-row high-power Hall element | |
| CN203826369U (en) | Semiconductor lead frame | |
| CN212825872U (en) | Aluminum-plastic film product side cut cutting die | |
| CN201364895Y (en) | Semiconductor packaging device with high heat dissipation | |
| CN209515637U (en) | A kind of power module architectures | |
| CN210006728U (en) | double-row special-shaped material lead frame | |
| CN107978530B (en) | Method for reducing injection molding flash of IPM module and DBC substrate | |
| CN111863765A (en) | DFN or QFN lead frame and manufacturing method thereof | |
| CN109545759A (en) | A kind of power module architectures and its manufacturing method | |
| CN220041846U (en) | SOP16L lead frame with base island provided with lock hole | |
| CN110491854A (en) | The encapsulating structure and method of power semiconductor | |
| CN216541684U (en) | Correction tool that alloy frame deformation | |
| CN206225347U (en) | A kind of combined type rectifier cell | |
| CN220041860U (en) | IDF type lead frame of SOP10 | |
| CN202231006U (en) | SMA integrated circuit punching moulded product and SMA multi-row lead frame | |
| CN103325919B (en) | A kind of LED production technology of L-type metal substrate and substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Packaging structure of power semiconductor device Effective date of registration: 20211109 Granted publication date: 20200313 Pledgee: Jiangsu Jinmao Financing Guarantee Co., Ltd Pledgor: Jiangsu Ming Microelectronics Co., Ltd Registration number: Y2021980012163 |