CN210041633U - High temperature resistant power chip - Google Patents
High temperature resistant power chip Download PDFInfo
- Publication number
- CN210041633U CN210041633U CN201921393126.4U CN201921393126U CN210041633U CN 210041633 U CN210041633 U CN 210041633U CN 201921393126 U CN201921393126 U CN 201921393126U CN 210041633 U CN210041633 U CN 210041633U
- Authority
- CN
- China
- Prior art keywords
- chip
- pin
- notch
- outer shell
- outer pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Thermistors And Varistors (AREA)
Abstract
The utility model relates to a power chip, in particular to a high temperature resistant power chip, which comprises an outer shell, an outer pin, a bottom plate, a through hole, a taper end, an organic silicon conductive agent, a first notch, an inner pin, an insulating ceramic sheet, a chip, an electrode wire, an electrode plate, an installation cavity, a second notch and a placement groove, wherein the interior of the outer shell is provided with the installation cavity, the chip and the outer shell are fixedly installed through the insulating ceramic sheet, a plurality of groups of placement grooves are arranged at the top of the chip, the electrode plate is fixedly installed inside the placement grooves, one side of the outer shell is provided with the outer pin, the outer pin and the chip are fixedly installed through the inner pin, one end of the outer pin, which is far away from the inner pin, is provided with the taper end, the whole device of the utility model has simple structure, and the high temperature resistant effect is achieved through the power chip made of, the service life of the device is longer, and the device has a certain popularization effect.
Description
Technical Field
The utility model relates to a power chip specifically is a high temperature resistance power chip.
Background
In the world, people's life is an instant and can not leave electronic equipment, a power management chip plays roles of conversion, distribution, detection and other electric energy management on electric energy in an electronic equipment system, the power management chip is indispensable to the electronic system, the quality of the performance of the power management chip directly influences the performance of the whole machine, and the scope of power management is wide, and the power management chip comprises independent electric energy conversion (mainly from direct current to direct current, namely DC/DC), independent electric energy distribution and detection and a system combining the electric energy conversion and the electric energy management. Accordingly, the classification of the power management chip also includes such aspects as a linear power chip, a voltage reference chip, a switching power chip, an LCD driver chip, an LED driver chip, a voltage detection chip, a battery charging management chip, etc., but many power chips on the market at present have the defect of high temperature deformation and discoloration, resulting in short service life, and thus a high temperature resistant power chip is needed to improve the above problems.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a high temperature resistance power chip to solve the problem that proposes in the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme:
a high-temperature-resistant power chip comprises an outer shell, an outer pin, a bottom plate, a through hole, a conical end, an organic silicon conductive agent, a first notch, an inner pin, an insulating ceramic sheet, a chip, an electrode wire, an electrode sheet, an installation cavity, a second notch and a placement groove, wherein the installation cavity is formed in the outer shell, the chip is arranged in the installation cavity, the chip and the outer shell are fixedly installed through the insulating ceramic sheet, a plurality of groups of placement grooves are formed in the top of the chip, the electrode sheet is fixedly installed in the placement groove, the outer pin is arranged on one side of the outer shell, the outer pin and the chip are fixedly installed through the inner pin, the conical end is arranged at one end, away from the inner pin, of the outer pin, the outer pin and the outer surface of the inner pin are coated with the organic silicon conductive agent, the outer pin and the electrode sheet are linearly connected through the electrode wire, and outer pin passes the inside of first notch, the shell body is kept away from outer pin one side and is seted up the second notch, one side fixed mounting that outer pin was kept away from to the shell body has the bottom plate, and the bottom plate passes the second notch and extends to chip one side, the through-hole has been seted up on the bottom plate.
Preferably, the outer pin is in a seven-letter shape.
Preferably, the installation cavity is filled with inert gas.
Preferably, the insulating ceramic sheet, the shell and the chip are fixedly connected through strong glue.
Preferably, the outer shell is made of epoxy plastic sealing glue in a customized mode, and the outer surface of the outer shell is subjected to laser engraving screen printing.
Preferably, the bottom plate, the outer pins and the inner pins are all made of pure red copper in a customized mode, and the outer pins and the inner pins are integrally formed in a stretching mode.
Compared with the prior art, the beneficial effects of the utility model are that:
1. the utility model discloses in, during the use, organosilicon conductive agent through coating pin and inner pin surface outside has good high temperature resistance, and the deformation of not discolouing under the high temperature, and through the bottom plate that adopts pure red copper customization to form, outer pin and inner pin overflow the heat dissipation strong, the shell body that adopts epoxy plastic envelope to glue the customization to form simultaneously has the flame retardant resistance, and high temperature resistant, the leakproofness is strong, herein simultaneously, power chip through adopting multiple high temperature resistant material preparation to form reaches high temperature resistant effect, make its life longer.
2. The utility model discloses in, during the use, can keep apart chip and shell body through the insulating pottery piece that sets up for both are not direct contact, thereby the effectual phenomenon that prevents the electric leakage, and through filling establish the inert gas inside the installation cavity, are favorable to the stability of chip self performance, and utilize through the toper end that sets up pin one end outside and reduce area of contact, make its current flow rate faster.
Drawings
FIG. 1 is a schematic view of the overall external structure of the present invention;
FIG. 2 is the schematic diagram of the whole internal structure of the present invention
In the figure: the structure comprises a shell 1, an outer shell 2, an outer pin 3, a bottom plate 4, a through hole 5, a tapered end 6, an organic silicon conductive agent 7, a first notch 8, an inner pin 9, an insulating ceramic sheet 10, a chip 11, an electrode wire 11, an electrode sheet 12, a mounting cavity 13, a second notch 14 and a placing groove 15.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-2, the present invention provides a technical solution:
a high-temperature-resistant power chip comprises an outer shell 1, outer pins 2, a bottom plate 3, through holes 4, a conical end 5, an organic silicon conductive agent 6, a first notch 7, inner pins 8, an insulating ceramic sheet 9, a chip 10, electrode wires 11, electrode plates 12, an installation cavity 13, a second notch 14 and a placement groove 15, wherein the installation cavity 13 is formed in the outer shell 1, the chip 10 is arranged in the installation cavity 13, the chip 10 and the outer shell 1 are fixedly installed through the insulating ceramic sheet 9, a plurality of groups of placement grooves 15 are formed in the top of the chip 10, the electrode plates 12 are fixedly installed in the placement grooves 15, the outer pins 2 are arranged on one side of the outer shell 1, the outer pins 2 and the chip 10 are fixedly installed through the inner pins 8, the conical end 5 is arranged at one end, far away from the inner pins 8, of the outer pins 2, when the high-temperature-resistant power chip is used, the chip 10 and the outer shell 1 can be isolated, the outer pin 2 and the inner pin 8 are coated with organosilicon conductive agent 6, the outer pin 2 and the electrode plate 12 are linearly connected through an electrode wire 11, the outer shell 1 is provided with a first notch 7 on one side close to the outer pin 2, the outer pin 2 passes through the inside of the first notch 7, the outer shell 1 is provided with a second notch 14 on one side far away from the outer pin 2, a bottom plate 3 is fixedly arranged on one side far away from the outer pin 2 of the outer shell 1, the bottom plate 3 passes through the second notch 14 and extends to one side of the chip 10, and a through hole 4 is arranged on the bottom plate 3, during the use, organosilicon conducting agent 6 through the coating at outer pin 2 and 8 surface of inner pin has good high temperature resistance, and the deformation of discolouing under the high temperature, and bottom plate 3 through adopting pure red copper customization to form, outer pin 2 and inner pin 8 overflow the heat dissipation reinforce, shell body 1 that the customization of adopting epoxy plastic sealing glue to form simultaneously has the flame retardant resistance, and high temperature resistant, the leakproofness is strong, meanwhile, herein, power chip through adopting multiple high temperature resistant material preparation to form reaches high temperature resistant effect, make its life longer.
The utility model discloses the theory of operation: when in use, the integral device and an external circuit board are fixedly installed by combining the arranged outer pins 2 with auxiliary materials, and the organosilicon conductive agent 6 coated on the outer surfaces of the outer pin 2 and the inner pin 8 has good high temperature resistance and does not change color at high temperature, the bottom plate 3, the outer pins 2 and the inner pins 8 which are made of pure red copper in a customization mode have strong overcurrent and heat dissipation, meanwhile, the outer shell 1 customized by the epoxy plastic sealant has flame resistance, high temperature resistance and strong sealing property, meanwhile, the chip 10 and the outer case 1 can be isolated by the insulating ceramic sheet 9, so that they are not in direct contact, thereby the effectual phenomenon of preventing the electric leakage, whole device simple structure reaches high temperature resistant effect through the power chip that adopts multiple high temperature resistant material preparation to form for its life is longer, has certain spreading value.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The utility model provides a high temperature resistance power chip, includes shell body (1), outer pin (2), bottom plate (3), through-hole (4), toper end (5), organosilicon conducting agent (6), first notch (7), inner pin (8), insulating pottery piece (9), chip (10), electrode wire (11), electrode slice (12), installation cavity (13), second notch (14) and standing groove (15), its characterized in that: an installation cavity (13) is formed in the outer shell (1), a chip (10) is arranged in the installation cavity (13), the chip (10) and the outer shell (1) are fixedly installed through an insulating ceramic sheet (9), a plurality of groups of placement grooves (15) are formed in the top of the chip (10), an electrode plate (12) is fixedly installed in the placement grooves (15), an outer pin (2) is arranged on one side of the outer shell (1), the outer pin (2) and the chip (10) are fixedly installed through an inner pin (8), a conical end (5) is arranged at one end, away from the inner pin (8), of the outer pin (2), the outer surface of the inner pin (8) is coated with an organic silicon conductive agent (6), the outer pin (2) is linearly connected with the electrode plate (12) through an electrode wire (11), a first notch (7) is formed in one side, close to the outer pin (2), of the outer shell (1), and outer pin (2) pass the inside of first notch (7), outer pin (2) one side is kept away from in shell body (1) and second notch (14) have been seted up, one side fixed mounting that outer pin (2) were kept away from in shell body (1) has bottom plate (3), and bottom plate (3) pass second notch (14) and extend to chip (10) one side, through-hole (4) have been seted up on bottom plate (3).
2. The high-temperature-resistant power chip as claimed in claim 1, wherein: the outer pin (2) is in a seven-character shape.
3. The high-temperature-resistant power chip as claimed in claim 1, wherein: and inert gas is filled in the mounting cavity (13).
4. The high-temperature-resistant power chip as claimed in claim 1, wherein: the insulating ceramic sheet (9) is fixedly connected with the outer shell (1) and the chip (10) through strong glue.
5. The high-temperature-resistant power chip as claimed in claim 1, wherein: the outer shell (1) is made of epoxy plastic sealing glue in a customized mode, and the outer surface of the outer shell is subjected to laser engraving screen printing.
6. The high-temperature-resistant power chip as claimed in claim 1, wherein: bottom plate (3), outer pin (2) and interior pin (8) all adopt pure red copper customization to form, and outer pin (2) and interior pin (8) are through integrative stretch forming.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201921393126.4U CN210041633U (en) | 2019-08-26 | 2019-08-26 | High temperature resistant power chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201921393126.4U CN210041633U (en) | 2019-08-26 | 2019-08-26 | High temperature resistant power chip |
Publications (1)
Publication Number | Publication Date |
---|---|
CN210041633U true CN210041633U (en) | 2020-02-07 |
Family
ID=69351432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201921393126.4U Active CN210041633U (en) | 2019-08-26 | 2019-08-26 | High temperature resistant power chip |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN210041633U (en) |
-
2019
- 2019-08-26 CN CN201921393126.4U patent/CN210041633U/en active Active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103515365A (en) | Large power crimping type IGBT device | |
CN203481226U (en) | Large power crimping type IGBT device | |
CN201149869Y (en) | LED encapsulation structure | |
CN210041633U (en) | High temperature resistant power chip | |
CN109950382A (en) | High-voltage LED lamp bead and its packaging method | |
CN209046614U (en) | A kind of narrow lead spacing light MOS solid-state relay of 1.27mm | |
CN201845773U (en) | High-power LED (Light Emitting Diode) packaging module | |
CN208173593U (en) | Metal Packaging cascaded structure diode | |
CN201004460Y (en) | A LED lamp based on COA technology | |
CN214956458U (en) | Novel high temperature resistant SMD aluminum electrolytic capacitor | |
CN201638847U (en) | LED lighting unit without printed circuit layer | |
CN209861242U (en) | High-efficient radiating PCB board | |
CN209744079U (en) | High-power high heat dissipation LED lamp pearl | |
CN204696102U (en) | A kind of heat radiating installation construction of power device | |
CN210575922U (en) | Packaging structure of power semiconductor device | |
WO2022028022A1 (en) | Novel led stereoscopic light source | |
CN209526080U (en) | Intelligent power module | |
CN202712257U (en) | Ceramic base material LED light source module support | |
CN108566160B (en) | Intelligent junction box with multichannel power management module | |
CN206148420U (en) | Fill electric pile and prevent anti - diode module | |
CN215299289U (en) | LED device and lighting device | |
CN206274518U (en) | A kind of LED patch supports conductive metal frames | |
CN211578751U (en) | Surface-mounted COB substrate and lamp bead | |
CN106287260B (en) | LED lamp circuit board, LED lamp and application method for eliminating slight brightness of LED lamp after power failure | |
CN204029869U (en) | The loose heat conduction base plate for packaging of a kind of middle low power LED |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |