CN215299289U

CN215299289U - LED device and lighting device

Info

Publication number: CN215299289U
Application number: CN202121351966.1U
Authority: CN
Inventors: 李伟伟
Original assignee: Jiangxi Zhaochi Photoelectric Co ltd
Current assignee: Jiangxi Zhaochi Photoelectric Co ltd
Priority date: 2021-06-17
Filing date: 2021-06-17
Publication date: 2021-12-24
Anticipated expiration: 2031-06-17

Abstract

The utility model provides a LED device and lighting device, including the base plate, the front of base plate is equipped with wafer bonding region and a plurality of electrode zone, and wafer bonding region is connected with the electrode zone electricity, and arbitrary electrode zone is all including setting up the first metal level on the base plate, and the electrode zone is equipped with the through-hole, and the through-hole runs through first metal level and base plate, injects in the through-hole to have the dielectric medium of leading, and the back of base plate is equipped with the second metal level, and the second metal level passes through the through-hole to be connected with the electrode zone electricity, and the base plate passes through on second metal level welding connects a base. The utility model provides a LED device is through the mode that sets up the through-hole at the electrode zone to lead to the back with the positive electrode of base plate, make this LED device can carry out SMD welding, in order to replace the manual work to carry out manual welded traditional operating mode to the positive electrode of base plate, very big improvement production efficiency and welding qualification rate.

Description

LED device and lighting device

Technical Field

The utility model relates to a LED encapsulates technical field, in particular to LED device and lighting device.

Background

COB packaging, known as Chip On Board (COB), is a packaging device in which a bare chip is adhered to an interconnection substrate by conductive or non-conductive adhesive, and then wire bonding is performed to realize electrical connection, and has the characteristic of fast heat dissipation.

At present, the high-power LED product in the market generally is the COB product, can bear the weight of the power and be 3W ~ 500W, and it has the good characteristics of heat dispersion, and among the prior art, COB product's positive and negative polarity all is positive at the base plate usually, need arrange the staff during the equipment and carry out manual welding, however, adopt artifical manual welding equipment to have following shortcoming:

1. the stability of manual welding and assembling is poor, COB products are easily contaminated in the welding process, and the welding reject ratio of the products is high;

2. the production efficiency is low, and the actual production requirement is difficult to meet.

SUMMERY OF THE UTILITY MODEL

Based on this, the utility model aims at providing a LED device and lighting device to solve the problem that the product defective rate that traditional manual welding equipment mode leads to is higher and production efficiency is lower.

The utility model provides a LED device, includes the base plate, the front of base plate is equipped with wafer bonding region and a plurality of electrode region, wafer bonding region with the electrode region electricity is connected, and arbitrary the electrode region all including set up in first metal layer on the base plate, the electrode region is equipped with the through-hole, the through-hole runs through first metal layer with the base plate, it leads the dielectric medium to have annotated in the through-hole, the back of base plate is equipped with the second metal layer, the second metal layer passes through the through-hole with the electrode region electricity is connected, the base plate passes through the second metal layer welds on a base.

According to the LED device, the through holes are formed in each electrode area, penetrate through the first metal layer and the base plate, meanwhile, the conducting medium is filled in the through holes, and the conducting medium is communicated with the first metal layer and the second metal layer respectively, so that the front electrode of the base plate is LED to the back surface, the LED device can be subjected to surface mounting type welding, the traditional operation mode that manual welding is carried out on the front electrode of the base plate by replacing manpower is replaced, and the production efficiency and the welding qualified rate are greatly improved.

Further, the wafer bonding area comprises a plurality of chips arranged on the substrate, a dam and a packaging colloid, wherein the chips are arranged in the dam, and the packaging colloid is filled in the dam and used for covering the chips.

Further, a plurality of the chips are connected to the electrode region by wires extending out of the dam and connected to the first metal layer.

Furthermore, an insulating layer is arranged between the wafer bonding region and the electrode region and is used for covering the metal wire.

Further, the diameter of the through hole is not more than 1 mm.

Furthermore, the number of the through holes arranged in the same electrode area is at least 2.

Further, the conductive medium is at least one of silver, copper, tin and gold.

Furthermore, the substrate is made of an insulating material and is square or circular.

Further, the packaging colloid is fluorescent glue, and the insulating layer is insulating ink.

The utility model also provides a lighting device, this lighting device still includes foretell LED device.

Drawings

Fig. 1 is a schematic front structural diagram of an LED device according to an embodiment of the present invention;

fig. 2 is a schematic diagram of a reverse structure of an LED device in an embodiment of the present invention.

Description of the main element symbols:

LED device	100	Substrate	10
				First goldLayer of metal	20	Through hole	101
Second metal layer	30	Chip and method for manufacturing the same	40
				Enclosure dam	50	Packaging colloid	501
Insulating layer	60

The following detailed description of the invention will be further described in conjunction with the above-identified drawings.

Detailed Description

In order to facilitate understanding of the present invention, the present invention will be described more fully hereinafter with reference to the accompanying drawings. Several embodiments of the invention are given in the accompanying drawings. The invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

Referring to fig. 1 and fig. 2, a schematic structural diagram of an LED device 100 according to an embodiment of the present invention is shown, including a substrate 10, wherein:

the front surface of the substrate 10 is provided with a wafer bonding region and a plurality of electrode regions, in this embodiment, the wafer bonding region is located in the middle of the substrate 10, the electrode regions are provided with four regions and located at four corners of the substrate 10, each electrode region includes a first metal layer 20 disposed on the substrate 10, a through hole 101 is further disposed in each electrode region, the through hole 101 penetrates through the first metal layer 20 and the substrate 10, the through hole 101 is filled with a conductive medium, the back surface of the substrate 10 corresponding to the through hole 101 is provided with a second metal layer 30, the second metal layer 30 is electrically connected with the electrode regions through the through hole 101, that is, the second metal layer 30 is communicated with the first metal layer 20, the substrate 10 is welded on a base through the second metal layer 30, and therefore encapsulation is achieved.

Preferably, the first metal layer 20 and the second metal layer 30 are made of one or more of gold, silver, tin, and the like, and in this embodiment, the first metal layer 20 and the second metal layer 30 are made of a thermal conductive solder paste.

According to the above LED device 100, the through hole 101 is formed in each electrode region, the through hole 101 penetrates through the first metal layer 20 and the substrate 10, and meanwhile, the conductive medium is filled in the through hole 101 and is respectively communicated with the first metal layer 20 and the second metal layer 30, so that the electrode on the front side of the substrate 10 is LED to the back side, the LED device 100 can be subjected to patch welding, the traditional operation mode that manual welding is performed on the electrode on the front side of the substrate 10 by manpower is replaced, and the production efficiency and the welding qualification rate are greatly improved.

It should be noted that the shape of the through hole 101 may be circular, square, triangular, etc., and since the shape of the first metal layer 20 is affected by the too large diameter of the through hole 101, and the current overload situation is considered, the diameter of the through hole 101 should not exceed 1mm, and is specifically set to 0.3mm in this embodiment, so as to ensure that the electrode can normally carry the current used by the lamp bead.

It can be understood that, in order to strengthen the current conducting effect of leading the front electrode of the substrate 10 to the back, the number of the through holes 101 arranged in each electrode area is not less than 2, in this embodiment, each electrode area is provided with 3 through holes 101 penetrating through the first metal layer 20 and the substrate 10, thereby greatly strengthening the current conduction of the front electrode and the back second metal layer 30, obviously, in other embodiments of the present invention, the user can set other numbers of through holes 101 according to actual needs to ensure the current conduction.

Preferably, the conductive medium is at least one of silver, copper, tin and gold, and in this embodiment, in order to improve the conductive performance between the first metal layer 20 and the second metal layer 30, the conductive medium is selected to be silver, and a silver solution is poured into each through hole 101, so that each through hole 101 is filled with silver.

Further, the wafer bonding region includes a plurality of chips 40, a dam 50 and a molding compound 501 disposed on the substrate 10, the chips 40 are disposed in the dam 50, the molding compound 501 is filled in the dam 50 and used for covering the chips 40, the chips 40 are disposed on the substrate 10, and the substrate 10 is mounted on a base of an application product, so that the number of mounting parts of the application product can be reduced, and the manufacturing cost can be reduced.

It will be appreciated that a plurality of the chips 40 are connected to the electrode regions by wires which extend beyond the dam 50 and are connected to the first metal layer 20, and that all the chips 40 are connected by wires which are connected to the first metal layer 20 in the electrode regions, so as to allow electrical conduction.

Further, an insulating layer 60 is disposed between the wafer bonding region and the electrode region, and the insulating layer 60 is used to cover the metal wires. The exposed metal wires between the wafer bonding region and the electrode region are protected by the insulating layer 60, so that the metal wires can be effectively prevented from being damaged due to the influence of the external environment.

Preferably, in the present embodiment, the insulating layer 60 is specifically insulating ink to cover and protect the exposed metal wires.

Preferably, the substrate 10 may be square or circular, in this embodiment, the encapsulant 501 is a fluorescent glue, and the substrate 10 is a ceramic substrate 10 and is square.

In conclusion, through setting up a plurality of through-hole 101 at every electrode region, arbitrary through-hole 101 all runs through first metal level 20 and base plate 10, the conducting medium has all been poured into in the through-hole 101 simultaneously, so that conducting medium switches on first metal level 20 and second metal level 30, thereby the realization draws the motor that connects the base plate 10 is positive to the back, make this LED device 100 can carry out SMD welding from the back, in order to replace artifical traditional operating mode that carries out manual welding to base plate 10 openly, very big improvement production efficiency, can effectively avoid leading to the fact pollution and damage to base plate 10 openly when manual welding simultaneously, the higher problem of defective rate when having solved manual welding.

The present invention further provides a lighting device, which comprises the LED device 100 in the above embodiments, and since the lighting device in this embodiment adopts all the technical solutions of all the above embodiments, all the beneficial effects of all the above embodiments are at least achieved, and will not be described in detail herein.

The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.

Claims

1. The utility model provides a LED device, includes the base plate, its characterized in that, the front of base plate is equipped with wafer bonding region and a plurality of electrode zone, wafer bonding region with the electrode zone electricity is connected, and arbitrary the electrode zone all including set up in first metal layer on the base plate, the electrode zone is equipped with the through-hole, the through-hole runs through first metal layer with the base plate, it has the electrically conductive medium to annotate in the through-hole, the back of base plate is equipped with the second metal layer, the second metal layer pass through the through-hole with the electrode zone electricity is connected, the base plate passes through second metal layer welds on a base.

2. The LED device of claim 1, wherein the die bonding area comprises a plurality of chips disposed on the substrate, a dam, and an encapsulant, the chips being disposed in the dam, the encapsulant filling the dam and covering the chips.

3. The LED device of claim 2, wherein a plurality of the chips are connected to the electrode regions by wires that extend beyond the dam and are connected to the first metal layer.

4. A LED device according to claim 3, wherein an insulating layer is provided between the wafer bonding region and the electrode region, the insulating layer covering the wire.

5. The LED device of claim 1, wherein the diameter of the via is no greater than 1 mm.

6. The LED device of claim 1, wherein the number of vias disposed in the same electrode region is at least 2.

7. The LED device of claim 1, wherein the conductive medium is any one of silver, copper, tin, and gold.

8. The LED device of claim 1, wherein the substrate is made of an insulating material, and the substrate is square or circular.

9. The LED device of claim 4, wherein the encapsulant is a fluorescent glue and the insulating layer is an insulating ink.

10. A lighting device characterized in that it comprises a LED device as claimed in any one of claims 1 to 9.