CN209979637U - Take temperature control's sample incubation device - Google Patents

Take temperature control's sample incubation device Download PDF

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Publication number
CN209979637U
CN209979637U CN201822053900.9U CN201822053900U CN209979637U CN 209979637 U CN209979637 U CN 209979637U CN 201822053900 U CN201822053900 U CN 201822053900U CN 209979637 U CN209979637 U CN 209979637U
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electrically connected
circuit
field effect
effect transistor
temperature control
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顾秋涛
姜陈洋
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Shanghai Ha Ha Biological Technology Co Ltd
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Shanghai Ha Ha Biological Technology Co Ltd
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Abstract

The utility model relates to a sample incubation device with temperature control, which comprises a hole plate component mechanism, a tray component mechanism, a semiconductor temperature control component mechanism and a heat dissipation component mechanism, wherein the hole plate component mechanism and the tray component mechanism are all frame-type disc bodies which are nested together from top to bottom; the semiconductor temperature control assembly mechanism is arranged close to the bottom of the tray assembly mechanism; and the integrated sample incubation device with temperature control is formed by a heat dissipation component mechanism directly connected with the semiconductor temperature control component mechanism. The sample incubation device with the temperature control function has the advantages that the whole mechanism is more compact, and the space is greatly saved; the bidirectional temperature control is realized, and the incubation temperature can be set according to the test requirements of a user; by adopting water as an incubation medium, the temperature in each hole of the cell pore plate is better ensured to be consistent; when the set temperature is very low relative to the ambient temperature, the water dew generated in the tray can not damage the instrument; has good popularization and use values.

Description

Take temperature control's sample incubation device
Technical Field
The utility model relates to an in vitro diagnosis medical instrument for testing samples such as human blood, urine, and the like, in particular to a device which can realize real-time incubation and temperature control of samples.
Background
The medical in-vitro diagnostic equipment mainly realizes the detection of samples such as human blood, urine and the like, and partial tests (such as blood cell tests), particularly in the batch test process of cell pore plates, the temperature control of the samples is needed to ensure the cell activity so as to obtain the optimal test result. Meanwhile, the temperature required to be controlled is different according to different sample test items, and the general temperature requirement range is 4-37 ℃.
At present, medical in-vitro detection equipment in the market mainly controls the temperature of a reagent and a reaction substance (a mixture of the reagent and a sample), wherein the refrigeration of a reagent incubation reagent is mainly used, and the incubation of the reaction substance is generally controlled to be about 37 ℃. Samples from the cell well plate were incubated less often.
In addition, in the use of flow cytometry and various protein detectors in the medical field, an autosampler is often required. The automatic sample injector is an intelligent and automatic sample injector, and can complete the automatic sample injection process only by setting sample injection parameters (including the environmental temperature of cells in the injector) and placing a sample to be detected. The enzymatic reaction is most rapid considering that the enzyme activity is strongest when each enzyme contained in the cells to be detected is in an optimum temperature range. Such as: in a suitable temperature range, the enzymatic reaction rate can be increased by a factor of 1 to 2 for every 10 ℃ rise in temperature. The temperature of the sample introduction platform is particularly important to be controllable because the optimum temperature of enzymes in different organisms is different.
In addition, fluorescent fuel is required to be added in cell detection, after different cells are stained by the fluorescent fuel, fluorescent signals with different wavelengths can be excited under the irradiation of the same laser, and in the process, the environment of the detected cells needs to keep stability, and the precision is required to be within +/-0.1 ℃. Many experiments are not only performed at a certain temperature, but also are performed by temperature comparison, so that the experimenters often control the temperature of the reactant accurately.
Therefore, in order to carry out accurate control to the temperature, satisfy the requirement of testing process to ambient temperature, the utility model provides a high-efficient temperature control system for autoinjection system.
SUMMERY OF THE UTILITY MODEL
The purpose of the utility model is that the device comprises the following two aspects: the device comprises a sample incubation device, a temperature control device and a temperature control device, wherein the sample incubation device can be used for controlling the temperature according to the test requirements of a user; secondly, aim at providing a high-efficient temperature control system that is used for the autoinjection system of sample incubation device, its purpose is through the accurate control to the temperature, guarantee the accuracy and the reliability of inspection data.
The sample incubation device with the temperature control comprises a sample incubation mechanism and a high-efficiency temperature control system; orifice plate subassembly, tray subassembly, semiconductor temperature control subassembly and radiator unit, its characterized in that: the hole plate assembly and the tray assembly mechanism are both frame-type disc-shaped bodies which are nested together from top to bottom; the semiconductor temperature control assembly mechanism is arranged close to the bottom of the tray assembly mechanism; and the integrated sample incubation device with temperature control is formed by a heat dissipation component mechanism directly connected with the semiconductor temperature control component mechanism.
The tray component consists of a tray 3, an incubation bottom plate 4, a temperature sensor 6 and a spring clamp 9; the incubation bottom plate 4 is fixed on the inner bottom surface of the tray 3 through six tray connecting screws 13 to form a contact disc surface for containing the disc-type hole plate assembly mechanism; the temperature sensor 6 and the semiconductor refrigerator 5 are arranged on the incubation bottom plate 4; and a water-repellent layer 14 is provided between the contact surfaces between the tray 3 and the incubation floor 4.
The heat dissipation component consists of a heat dissipation sheet 7 and a fan 8, wherein the heat dissipation sheet 7 is directly attached to the semiconductor refrigerator 5, and the heat dissipation mechanism of the sample incubation device is formed by the fan 8 attached to the semiconductor refrigerator 5.
The pore plate component is a frame-type water containing disc consisting of a cell pore plate 1 and a pore plate support frame 2, wherein the bottom surface of the inner side of the pore plate support frame 2 is provided with a concave spherical surface which is matched with the spherical surface of the bottom of the cell pore plate 1, and the liquid level of the concave spherical surface does not exceed the top surface of the cell pore plate 1; the incubation effect is better ensured.
The semiconductor temperature control component is composed of semiconductor refrigerators 5 which are respectively attached to the lower part and the left and the right parts of the incubation bottom plate 4; it includes: the master control circuit is used for outputting a first control signal and a second control signal;
the first driving circuit is electrically connected with the main control circuit and used for receiving a first control signal output by the main control circuit and driving according to the first control signal;
the second driving circuit is electrically connected with the main control circuit and used for receiving a second control signal output by the main control circuit and driving according to the second control signal;
the temperature control unit is respectively electrically connected with the first drive circuit and the second drive circuit, and the first drive circuit and the second drive circuit drive and control the working mode of the temperature control unit;
and the power supply circuit is electrically connected with the first driving circuit and the second driving circuit and used for supplying power to the first driving circuit and the second driving circuit.
The first drive circuit comprises a first left half-bridge drive sub-circuit and a first right half-bridge drive sub-circuit electrically connected to each other:
the input end of the first left half-bridge driving sub-circuit is electrically connected with the output end of the main control circuit respectively, the output end of the first left half-bridge driving sub-circuit is electrically connected with the temperature control unit, and the power supply end of the first left half-bridge driving sub-circuit is electrically connected with the power supply circuit;
the input end of the first right half-bridge driving sub-circuit is electrically connected with the output end of the main control circuit respectively, the output end of the first right half-bridge driving sub-circuit is electrically connected with the temperature control unit, and the power supply end of the first right half-bridge driving sub-circuit is electrically connected with the power supply circuit.
The second drive circuit comprises a second left half-bridge drive sub-circuit and a second right half-bridge drive sub-circuit electrically connected to each other:
the input end of the second left half-bridge driving sub-circuit is electrically connected with the output end of the main control circuit respectively, the output end of the second left half-bridge driving sub-circuit is electrically connected with the temperature control unit, and the power supply end of the second left half-bridge driving sub-circuit is electrically connected with the power supply circuit;
the input end of the second right half-bridge driving sub-circuit is electrically connected with the output end of the main control circuit respectively, the output end of the second right half-bridge driving sub-circuit is electrically connected with the temperature control unit, and the power supply end of the second right half-bridge driving sub-circuit is electrically connected with the power supply circuit.
The first left half-bridge drive sub-circuit comprises:
the input end of the first left half-bridge driving chip is electrically connected with the main control circuit and is used for receiving a first control signal output by the main control circuit;
the first output end of the first left half-bridge driving chip passes through a resistor R8And field effect transistor M2The first output end of the first left half-bridge driving chip is also connected with a diode D1Is electrically connected to the cathode of the diode D1And the field effect transistor M2Is electrically connected with the grid electrode of the field effect transistor M2Is electrically connected with the power supply circuit;
the second output end of the first left half-bridge driving chip passes through a resistor R14And field effect transistor M3The second output end of the first left half-bridge driving chip is also connected with a diode D5Is electrically connected to the cathode of the diode D5And the field effect transistor M3Is electrically connected with the grid electrode of the field effect transistor M3And the field effect transistor M2Is electrically connected with the source electrode of the field effect transistor M3The source of (2) is grounded;
the third output end of the first left half-bridge driving chip is respectively connected with the field effect transistor M2Source electrode of, said field effect transistor M3The third output end of the first left half-bridge driving chip is also connected with the drain electrode of the first left half-bridge driving chip through an inductor L1And is electrically connected with the temperature control unit.
The first right half-bridge drive sub-circuit comprises:
the input end of the first right half-bridge driving chip is electrically connected with the main control circuit and is used for receiving a first control signal output by the main control circuit;
the first output end of the first right half-bridge driving chip passes through a resistor R9And field effect transistor M1The first output end of the first right half-bridge driving chip is also connected with a diode D2Is electrically connected to the cathode of the diode D2And the field effect transistor M1Is electrically connected with the grid electrode of the field effect transistor M1Is electrically connected with the power supply circuit;
the second output end of the first right half-bridge driving chip passes through a resistor R15And field effect transistor M4The second output end of the first right half-bridge driving chip is also connected with a diode D6Is electrically connected to the cathode of the diode D6And the field effect transistor M4Is electrically connected with the grid electrode of the field effect transistor M4And the field effect transistor M1Is electrically connected with the source electrode of the field effect transistor M4The source of (2) is grounded;
the third output end of the first right half-bridge driving chip is respectively connected with the field effect transistor M1Source electrode of, said field effect transistor M4The third output end of the first right half-bridge driving chip is also electrically connected with the temperature control unit through an inductor L2.
The second left half-bridge drive sub-circuit comprises:
the input end of the second left half-bridge driving chip is electrically connected with the main control circuit and is used for receiving a second control signal output by the main control circuit;
the first output end of the second left half-bridge driving chip passes through a resistor R23And field effect transistor M5The first output end of the second left half-bridge driving chip is also connected with a diode D7Is electrically connected to the cathode of the diode D7And the field effect transistor M5Is electrically connected with the grid electrode of the field effect transistor M5Is electrically connected with the power supply circuit;
the second output end of the second left half-bridge driving chip passes through a resistor R29And field effect transistor M7The second output end of the second left half-bridge driving chip is also connected with a diode D11Is electrically connected to the cathode of the diode D11And the field effect transistor M7Is electrically connected with the grid electrode of the field effect transistor M7And the field effect transistor M5Is electrically connected with the source electrode of the field effect transistor M7The source of (2) is grounded;
the third output end of the second left half-bridge driving chip is respectively connected with the field effect transistor M5Source electrode of, said field effect transistor M7The third output end of the second left half-bridge driving chip is also connected with the drain electrode of the second left half-bridge driving chip through an inductor L3And is electrically connected with the temperature control unit.
The second negative drive sub-circuit includes:
the input end of the second right half-bridge driving chip is electrically connected with the main control circuit and is used for receiving a second control signal output by the main control circuit;
the first output end of the second right half-bridge driving chip passes through a resistor R24And field effect transistor M6The first output end of the second right half-bridge driving chip is also connected with a diode D8Is electrically connected to the cathode of the diode D8And the field effect transistor M6Is electrically connected with the grid electrode of the field effect transistor M6Is electrically connected with the power supply circuit;
the second output end of the second right half-bridge driving chip passes through a resistor R30And field effect transistor M8The second output end of the second right half-bridge driving chip is also connected with a diode D12Is electrically connected to the cathode of the diode D12And the field effect transistor M8Is electrically connected with the grid electrode of the field effect transistor M8And a drain electrode ofThe field effect transistor M6Is electrically connected with the source electrode of the field effect transistor M8The source of (2) is grounded;
the third output end of the second right half-bridge driving chip is respectively connected with the field effect transistor M6Source electrode of, said field effect transistor M8The third output end of the second right half-bridge driving chip is also connected with the drain electrode of the second right half-bridge driving chip through an inductor L3And is electrically connected with the temperature control unit.
The power supply circuit includes:
the input end of the voltage conversion chip passes through a coil inductor L22Fuse element F1Is electrically connected with a power supply; the voltage conversion chip is also electrically connected with the first driving circuit and the second driving circuit and provides a first power supply for the electrical connection of the first driving circuit and the second driving circuit;
the interface end of the first field effect tube of the voltage conversion chip is connected to the Mp1The interface end of the second field effect transistor of the voltage conversion chip is connected to the field effect transistor Mp1The source electrode of (1), the field effect transistor Mp1The drain electrode of the voltage conversion chip is electrically connected with the input end of the voltage conversion chip;
the current detection end of the voltage conversion chip is electrically connected with the anode of a diode Dcs, and the cathode of the diode Dcs is connected with the coil inductor Lout1And the voltage output end of the voltage conversion chip is electrically connected with the first driving circuit and the second driving circuit.
The temperature control unit comprises a first temperature control device and a second temperature control device:
the first temperature control device is electrically connected with the first driving circuit, and the second temperature control device is electrically connected with the second driving circuit.
According to the sample incubation device with the temperature control, which is provided by the technical scheme, the whole mechanism is more compact, and the space is greatly saved.
Simultaneously has the following technical characteristics:
1) the bidirectional temperature control is realized, and the incubation temperature can be set according to the test requirements of a user;
2) water is used as an incubation medium, so that the temperature in each hole of the cell pore plate is ensured to be consistent;
3) the waterproof function is realized, and when the set temperature is very low relative to the ambient temperature, water dew generated in the tray can not damage the instrument;
4) the cell orifice plate is provided with the spring clamp, so that the position of the cell orifice plate can be effectively ensured not to move in the test process.
5) The temperature control system can accurately control the temperature, and ensures the accuracy and reliability of data during experiments; meanwhile, the heat emitted can be reduced as much as possible, and the refrigeration efficiency is improved
6) The TEC is used for controlling the temperature, and the device has the advantages of small volume, high stability, cleanness and the like.
7) The power supply circuit has high conversion efficiency, generates small heat and has small influence on the environment temperature, thereby being beneficial to the accurate control of the temperature control system on the temperature.
Drawings
FIG. 1 is a schematic view showing the overall state of a sample incubation apparatus according to the present invention;
FIG. 2 is a cross-sectional view along line AA of FIG. 1;
FIG. 3 is a schematic diagram of an orifice plate assembly mechanism according to the present invention;
fig. 4 is a schematic view of the tray assembly mechanism of the present invention;
fig. 5 is a schematic view of the heat dissipation assembly mechanism of the present invention;
FIG. 6 is a schematic diagram of the temperature control principle of the high-efficiency temperature control system of the present invention;
fig. 7 is a schematic view of the temperature control principle of the high-efficiency temperature control system of the present invention;
fig. 8 is a schematic diagram of a temperature distribution model of the temperature control unit according to the present invention;
fig. 9 is a circuit structure diagram of a first driving circuit in the high-efficiency temperature control system of the present invention;
fig. 10 is a circuit structure diagram of a second driving circuit in the high-efficiency temperature control system of the present invention;
FIG. 11 is a diagram of a power supply circuit of the high efficiency temperature control system of the present invention;
fig. 12 is a schematic representation of carnot cycle coefficient distribution in an embodiment of the invention;
fig. 13 is a diagram illustrating a relationship between a supply voltage and a cooling power according to an embodiment of the present invention.
In the figure:
1-cell well plate 2-well plate support frame 3-tray 4-incubation bottom plate 5-semiconductor refrigerator 6-temperature sensor 7-cooling fin 8-fan 9-spring clamp 10-spring clamp coupling screw 11-fan coupling screw 12-cooling fin coupling screw 13-tray coupling screw 14-waterproof sealant layer 15-main control circuit 16-first drive circuit 17-second drive circuit 18-temperature control unit 19-power supply circuit 51-first temperature control device 52-second temperature control device.
Detailed Description
The present invention will be further described with reference to the accompanying drawings, and embodiments of the invention will be described below.
Fig. 1 is a schematic view of the overall structure of the present invention;
fig. 2 is a schematic diagram of the overall structure of the present invention, and the present device realizes the temperature control of the sample contained in the cell well plate 1, and mainly comprises the following 4 parts: an orifice plate assembly, a tray assembly, a semiconductor cooler 5, and a heat sink assembly. Wherein the semiconductor cooler 5 can perform cooling and heating depending on the direction of current flow through its two ports. The top surface of the semiconductor refrigerator 5 is tightly attached to the incubation bottom plate 4, and the contact surface is coated with heat-conducting silica gel, so that good contact and conduction performance is ensured; a temperature sensor 6 is arranged in the hole of the incubation bottom plate 4, so that the temperature of the incubation bottom plate 4 can be monitored in real time; the incubation bottom plate 4 and the tray 3 are fixedly connected through tray connecting screws, and the hole plate assembly is placed on the top of the incubation bottom plate, so that the temperature of the incubation bottom plate 4 is transmitted to the hole plate assembly; the side surface of the orifice plate supporting frame 2 of the orifice plate component is subjected to the elasticity of the spring clamp 9, so that the orifice plate component is ensured to be fixed in the tray 3, the bottom surface of the semiconductor refrigerator 5 is tightly attached to the heat dissipation component, and the contact surface is coated with heat-conducting silica gel, so that good contact and conduction performance is ensured; wherein the bottom surface of the inner side of the pore plate supporting frame 2 is provided with a concave spherical surface which is matched with the spherical surface at the bottom of the cell pore plate 1, and the liquid level of the concave spherical surface does not exceed the top surface of the cell pore plate 1; the incubation effect is better ensured.
Fig. 3 is the schematic diagram of the utility model discloses a pore plate subassembly, and the pore plate subassembly comprises cell orifice plate 1 and orifice plate carriage 2, and wherein cell orifice plate 1 is medical standard product on the market, generally is PC or other plastics material products, and the cell orifice plate adopts aluminum alloy or other better materials of heat conduction, injects the liquid level of right amount water assurance water in orifice plate carriage 2 and is not more than the top surface of cell orifice plate 1.
FIG. 4 is a schematic diagram of the tray assembly of the present invention, the tray assembly is located between the well plate assembly and the semiconductor cooler 5, and mainly comprises a tray 3, an incubation bottom plate 4, a temperature sensor 6, and a spring clamp 9, the incubation bottom plate 4 is fixed on the tray by six tray connecting screws 13, when the temperature of the incubation bottom plate 4 is very low relative to the ambient temperature and the ambient humidity is large, water dew is generated on the surface of the incubation bottom plate 4, and in order to protect the semiconductor cooler 5 at the bottom of the incubation bottom plate 4, a waterproof sealant is coated on the contact surface between the tray 3 and the incubation bottom plate 4 to ensure that the water dew is kept in the tray 3; the temperature sensor 6 is used for testing the real-time temperature of the incubation base plate 4 and is arranged in the hole of the incubation base plate 4; the spring clamp 9 is fixed to the tray 3 by a spring clamp coupling screw 10.
Fig. 5 is a schematic diagram of the heat dissipation assembly of the present invention, the main function of the heat dissipation assembly is to dissipate heat from the bottom surface of the semiconductor cooler 5, the main heat dissipation plate 7 and the fan 8 are formed, the fan 8 is fixed on the heat dissipation plate 7 by four fan connection screws 11, and the fan 8 blows air against the heat dissipation plate, and the air intake is the air of the environment where the device is located. When the apparatus needs to cool (heat) the incubation base plate 4, i.e., set at a temperature lower (higher) than the ambient temperature, the temperature of the bottom surface of the semiconductor refrigerator 5 is raised (lowered) to be conducted to the heat sink 7, and convection is performed by the operation of the fan 8 to balance the ambient temperature and the heat sink temperature.
As shown in fig. 6 and 7, the present invention provides an embodiment of a high-efficiency temperature control system for an automatic sample feeding system, comprising:
a main control circuit 15 for outputting a first control signal and a second control signal;
the first driving circuit 16 is electrically connected to the main control circuit 15, and is configured to receive a first control signal output by the main control circuit 15 and drive according to the first control signal;
the second driving circuit 17 is electrically connected with the main control circuit 15, and is configured to receive a second control signal output by the main control circuit 15 and drive according to the second control signal;
the temperature control unit 18 is electrically connected with the first drive circuit 16 and the second drive circuit 17 respectively, and the first drive circuit 16 and the second drive circuit 17 drive and control the working mode of the temperature control unit 18;
and a power supply circuit 19 electrically connected to the first drive circuit 16 and the second drive circuit 17, for supplying power to the first drive circuit 16 and the second drive circuit 17.
In particular, in the laboratory, laboratory personnel often need to precisely control the temperature of the experimental reaction. For example, in cell-related experiments, the enzyme in the cell has the strongest activity and the highest enzymatic reaction rate in the optimal temperature range. In a proper temperature range, the enzymatic reaction speed can be correspondingly improved by 1-2 times when the temperature is increased by 10 ℃. In addition, in cell detection, a fluorescent dye needs to be added, after different cells are stained by the fluorescent dye, fluorescent signals with different wavelengths can be excited under the irradiation of the same laser, and in the process, the environmental temperature of the cells needs to be kept stable, and the accuracy is within +/-0.1 ℃.
In this embodiment, the temperature control unit 18, the first driving circuit 16, the second driving circuit 17, the main control circuit 15, and the power supply circuit 19 may be used to control the temperature. The main control circuit can output a first control signal and a second control signal through the MCU. The staff can realize the control of temperature through MCU.
The temperature control unit 18 may be composed of a semiconductor temperature control device TEC (thermoelectric cooler), in this embodiment, the TEC is used as a temperature control core device, and the peltier effect of the semiconductor material is utilized, and when a direct current passes through a couple composed of two semiconductor materials, one end of the TEC absorbs heat and the other end releases heat. The TEC comprises a number of P-type and N-type pairs (sets) connected together by electrodes and sandwiched between two ceramic electrodes; when current flows through the TEC, the heat generated by the current is transferred from one side of the TEC to the other, creating a "hot" side and a "cold" side on the TEC. The TEC is used for controlling the temperature, and the device has the advantages of small volume, high stability, cleanness and the like.
In view of the improvement of the above embodiment, in the present embodiment, the first driving circuit 16 includes, as shown in fig. 9, a first left half-bridge driving sub-circuit and a first right half-bridge driving sub-circuit.
The first left half-bridge driving sub-circuit comprises a first left half-bridge driving chip U2The chip model can be IR 2011S; first left half-bridge driving chip U2Is electrically connected to the main control circuit 1, specifically, a first left half-bridge driving chip U2The input end of the control circuit comprises a Hin input end and a Lin input end which respectively receive the first control signal output by the main control circuit 1.
The first left half-bridge driving chip U2Is shown (i.e., the first left half-bridge driver chip U in fig. 9)2HO interface end) pass resistance R8And field effect transistor M2The first left half-bridge driving chip U2The first output terminal of the diode D is connected with the diode1Is electrically connected with the cathode, the anode of the diode D1 is electrically connected with the field effect transistor M2Is electrically connected with the grid electrode of the field effect transistor M2Is electrically connected to the supply circuit 19.
A second output terminal of the first left half-bridge driver chip U2 (i.e., the first left half-bridge driver chip U in FIG. 9)2LO interface terminal) pass through resistor R14And field effect transistor M3The first left half-bridge driving chip U2And the second output terminal of the diode D5Is electrically connected to the cathode of the diode D5And the field effect transistor M3Is electrically connected with the grid electrode of the field effect transistor M3And the field effect transistor M2Is electrically connected to the source electrodeSaid field effect transistor M3Is grounded.
The first left half-bridge driving chip U2Is (i.e., the first left half-bridge driving chip U in fig. 9)2Vs interface terminals) respectively with the field effect transistor M2Source electrode of, said field effect transistor M3Is electrically connected with the drain electrode of the first left half-bridge driving chip U2The third output terminal of (2) is also connected with the inductor L1Is electrically connected with the temperature control unit 4 and provides positive control voltage for the temperature control unit 4.
First left half-bridge driving chip U2Vb interface terminal through capacitor C7Connected to a first left half-bridge driver chip U2A first left half-bridge driving chip U2Vb interface end of also passing through a resistor R11Connected to a diode D3The cathode of the diode D3Is connected to a first left half-bridge driving chip U2The power supply Vcc interface terminal of (1); first left half-bridge driving chip U2The power supply Vcc interface terminal of (1) is connected to the power supply 12V through a resistor R12; the power supply Vcc interface end of the first left half-bridge driving chip U2 is also connected with a capacitor C13Connected to a first left half-bridge driver chip U2COM interface terminal, first left half-bridge driving chip U2The COM interface terminal of (1) is grounded.
The first right half-bridge driving sub-circuit comprises a first right half-bridge driving chip U3The chip model can be IR 2011S; first right half bridge drive chip U3The input end of the driving circuit is electrically connected with the main control circuit 1, specifically, a first right half bridge driving chip U3Also includes a Hin input terminal and a Lin input terminal, respectively receiving the first control signal outputted by the main control circuit 1.
A first output terminal of the first right half-bridge driver chip U3 (i.e., the first right half-bridge driver chip U in fig. 9)3HO interface end) pass resistance R9And field effect transistor M1The grid of the first right half bridge driving chip U is electrically connected with the grid of the second right half bridge driving chip U3The first output terminal of the diode D is connected with the diode2Is electrically connected to the cathode of the diode D2And the field effect transistor M1Grid electrode ofConnection of said field effect transistor M1Is electrically connected to the supply circuit 5.
The first right half bridge driving chip U3Is (i.e., the first right half-bridge driver chip U in fig. 9)3LO interface terminal) pass through resistor R15And field effect transistor M4The grid of the first right half bridge driving chip U is electrically connected with the grid of the second right half bridge driving chip U3And the second output terminal of the diode D6Is electrically connected to the cathode of the diode D6And the field effect transistor M4Is electrically connected with the grid electrode of the field effect transistor M4And the field effect transistor M1Is electrically connected with the source electrode of the field effect transistor M4Is grounded.
The first right half bridge driving chip U3Is (i.e., the first right half-bridge driver chip U in fig. 9)3Vs interface terminals) respectively with the field effect transistor M1Source electrode of, said field effect transistor M4The drain electrode of the first right half-bridge driving chip U is electrically connected with the drain electrode of the second right half-bridge driving chip U3The third output terminal of (2) is also connected with the inductor L2Is electrically connected with the temperature control unit 18 and provides a control negative voltage for the temperature control unit 18.
First right half bridge drive chip U3Vb interface terminal through capacitor C8Is connected to a first right half-bridge driving chip U3A first right half-bridge driving chip U3Vb interface end of also passing through a resistor R10Connected to a diode D4The cathode of the diode D4Is connected to the first right half-bridge driving chip U3The power supply Vcc interface terminal of (1); first right half bridge drive chip U3The power supply Vcc interface end of the resistor R13Is connected to a working power supply 12V; first right half bridge drive chip U3The power supply Vcc interface end also passes through a capacitor C14Is connected to a first right half-bridge driving chip U3COM interface terminal, first right half-bridge driving chip U3The COM interface terminal of (1) is grounded.
The field effect transistor M in the first left half-bridge driving self circuit2And the drain electrode of the second half bridge is also connected with a field effect transistor M in the first right half bridge driving self circuit1Is electrically connected with the drain electrode; field effect transistor M2Drain electrode of (1) and field effect transistor M1Also through a capacitor C4Grounding; field effect transistor M2Drain electrode of (1) and field effect transistor M1Also through a capacitor C5And (4) grounding.
Inductor L1And a first left half-bridge driving chip U2Is electrically connected to the third output terminal of the inductor L1Is electrically connected with the temperature control unit 4, an inductor L1The other end of the capacitor C11Grounding; inductor L2One end of the first half bridge and the first right half bridge driving chip U3Is electrically connected to the third output terminal of the inductor L2Is electrically connected with the temperature control unit 4, an inductor L2The other end of the capacitor C12Grounding; inductor L1The other end of which passes through a capacitor C6And an inductance L2The other end of the first and second electrodes are electrically connected.
In view of the improvement of the above embodiment, in this embodiment, the second driving circuit 3 includes, as shown in fig. 10, a second left half-bridge driving sub-circuit and a second right half-bridge driving sub-circuit.
The second left half-bridge driving sub-circuit comprises a second left half-bridge driving chip U6The chip model can be IR 2011S; second left half-bridge driving chip U6Is electrically connected to the main control circuit 1, specifically, a second left half-bridge driving chip U6The input end of the control circuit comprises a Hin input end and a Lin input end which respectively receive the first control signal output by the main control circuit 1.
The second left half-bridge driving chip U6Is (i.e., the second left half-bridge driver chip U in fig. 10)6HO interface end) pass resistance R23And field effect transistor M5The second left half-bridge driving chip U6The first output terminal of the diode D is connected with the diode7Is electrically connected to the cathode of the diode D7And the field effect transistor M5Is electrically connected with the grid electrode of the field effect transistor M2Is electrically connected to the supply circuit 5.
The second left half-bridge driving chip U6Is (i.e., the second left half-bridge driving chip U in fig. 10)6L ofOInterface port) through resistance R29And field effect transistor M7The second left half-bridge driving chip U6And the second output terminal of the diode D11Is electrically connected to the cathode of the diode D11And the field effect transistor M7Is electrically connected with the grid electrode of the field effect transistor M7And the field effect transistor M5Is electrically connected with the source electrode of the field effect transistor M7Is grounded.
The second left half-bridge driving chip U6(i.e., the second left half-bridge driver chip U in fig. 10)6Vs interface terminals) respectively with the field effect transistor M5Source electrode of, said field effect transistor M7Is electrically connected with the drain electrode of the second left half-bridge driving chip U6The third output terminal of (2) is also connected with the inductor L3Is electrically connected with the temperature control unit 18 and provides positive control voltage for the temperature control unit 18.
Second left half-bridge driving chip U6V ofbInterface end pass through capacitor C7Connected to a second left half-bridge driver chip U6A second left half-bridge driving chip U6V ofbThe interface end also passes through a resistor R26Connected to a diode D9The cathode of the diode D9Is connected to a second left half-bridge driving chip U6The power supply Vcc interface terminal of (1); second left half-bridge driving chip U6The power supply Vcc interface end of the resistor R27Is connected to a working power supply 12V; second left half-bridge driving chip U6The power supply Vcc interface end also passes through a capacitor C27Connected to a second left half-bridge driver chip U6COM interface terminal of, the second left half-bridge driving chip U6The COM interface terminal of (1) is grounded.
The second right half-bridge driving sub-circuit comprises a second right half-bridge driving chip U7The chip model can be IR 2011S; second right half bridge driving chip U7The input end of the driving circuit is electrically connected with the main control circuit 1, specifically, a first right half bridge driving chip U7Also includes a Hin input terminal and a Lin input terminal, respectively receiving the first control signal outputted by the main control circuit 1.
The second right half bridge driving chip U7Is (i.e., the second right half-bridge driver chip U in fig. 10)7H of (A) to (B)OInterface port) through resistance R24And field effect transistor M6The grid of the second right half bridge driving chip U is electrically connected with the grid of the second right half bridge driving chip U7The first output terminal of the diode D is connected with the diode8Is electrically connected to the cathode of the diode D8And the field effect transistor M6Is electrically connected with the grid electrode of the field effect transistor M6Is electrically connected to the supply circuit 5.
The second right half bridge driving chip U7Is (i.e., the second right half-bridge driver chip U in fig. 10)7L ofOInterface port) through resistance R30And field effect transistor M8The grid of the second right half bridge driving chip U is electrically connected with the grid of the second right half bridge driving chip U7And the second output terminal of the diode D12Is electrically connected to the cathode of the diode D12And the field effect transistor M8Is electrically connected with the grid electrode of the field effect transistor M8And the field effect transistor M6Is electrically connected with the source electrode of the field effect transistor M8Is grounded.
The second right half bridge driving chip U7Is (i.e., the first right half-bridge driver chip U in fig. 10)3Vs interface terminals) respectively with the field effect transistor M6Source electrode of, said field effect transistor M8The drain electrode of the second right half-bridge driving chip U is electrically connected with the drain electrode of the first right half-bridge driving chip U7The third output terminal of (2) is also connected with the inductor L2And the temperature control unit 4 is electrically connected with the power supply and supplies control negative voltage to the temperature control unit 4.
Second right half bridge driving chip U7V ofbInterface end pass through capacitor C24Is connected to a second right half-bridge driving chip U7A second right half-bridge driving chip U7V ofbThe interface end also passes through a resistor R25Connected to a diode D10The cathode of the diode D10Is connected to the second right half-bridge driving chip U7The power supply Vcc interface terminal of (1); second right half bridge driving chip U7The power supply Vcc interface end of the resistor R28Is connected to a working power supply 12V; second right half bridge driving chip U7The power supply Vcc interface end also passes through a capacitor C28Is connected to a second right half-bridge driving chip U7COM interface terminal, second right half-bridge driving chip U7The COM interface terminal of (1) is grounded.
The field effect transistor M in the second left half-bridge driving self circuit5And the drain of the second half-bridge driving self circuit is also connected with a field effect transistor M in the second half-bridge driving self circuit6Is electrically connected with the drain electrode; field effect transistor M5Drain electrode of (1) and field effect transistor M6Also through a capacitor C19Grounding; field effect transistor M5Drain electrode of (1) and field effect transistor M6Also through a capacitor C18And (4) grounding.
Inductor L3And one end of the second left half-bridge driving chip U6Is electrically connected to the third output terminal of the inductor L3Is electrically connected with the temperature control unit 4, an inductor L3The other end of the capacitor C25Grounding; inductor L4One end of the second half bridge driving chip U and the second right half bridge driving chip U7Is electrically connected to the third output terminal of the inductor L4Is electrically connected with the temperature control unit 4, an inductor L4The other end of the capacitor C26Grounding; inductor L3The other end of which passes through a capacitor C20And an inductance L4The other end of the first and second electrodes are electrically connected.
The TEC driving circuit adopts a full-bridge driving mode, so that the TEC can work in two modes, namely a cooling mode and a heating mode, as shown in fig. 9 and fig. 10, where the first driving circuit 16 and the second driving circuit 17 are shown, and the first driving signal in this embodiment includes HOT _ TEC1 and COOL _ TEC 1; the second drive signal includes HOT _ TEC2, COOL _ TEC 2. HOT _ TEC1, COOL _ TEC1, HOT _ TEC2 and COOL _ TEC2 are PWM signals input by a controller MCU in an external main control circuit, when HOT _ TEC1 and HOT _ TEC2 are started, COOL _ TEC1 and COOL _ TEC2 are closed, and at the moment, the TECs are in a heating mode; on the contrary, HOT _ TEC1 and HOT _ TEC2 are closed, and when COOL _ TEC1 and COOL _ TEC2 are started, the TECs are in a refrigerating mode.
The present embodiment can be applied to temperature control of experiments, for example: in the use of flow cytometers and various protein detectors, an autosampler is often used. The automatic sample injector is an intelligent and automatic sample injector, and can complete the automatic sample injection process only by setting sample injection parameters (including the environmental temperature of cells in the injector) and placing a sample to be detected.
In order to achieve a good integration of the autosampler system with the fluidic part of the flow cytometer, the entire autosampler system needs to be embedded into the side of the cell analyzer in a relatively closed area. If the heat that temperature control system produced can not in time be dissipated, temperature control system through long-time work, the temperature can be accumulated certain threshold value gradually, makes operational environment constantly worsen, and the temperature control system of this embodiment can reduce the heat that gives out as far as possible, improves refrigeration efficiency.
To the improvement of the above embodiment, in the embodiment provided by the present invention, as shown in fig. 7, the temperature control unit 18 includes: a first temperature control device (TEC1) and a second temperature control device (TEC2), the first temperature control device 51 being electrically connected to the first drive circuit 16, and the second temperature control device 52 being electrically connected to the second drive circuit 17. According to the size of the controlled platform, i.e. the cold side, and the temperature range controlled by the TEC, which is 4 ℃ to 37 ℃, the temperature of the cell analyzer and the working environment of the automatic sample injection system is usually 25 ℃, considering that the automatic sample injection system is in a relatively closed environment, the internal temperature may reach 30 ℃, i.e. the temperature of the heat sink is 30 ℃, in the TEC model selection, a temperature distribution model is calculated and constructed as shown in fig. 6.
The temperature difference between the cold side and the hot side of the TEC is 30.85 ℃ at most, and the carnot coefficient is 1.2 according to the carnot cycle coefficient of fig. 7, so that the required refrigeration power is 30.85 × 1.2 — 37W.
The contact surface of Ferrotec company is 39.7mm, model 72005/127/060B TEC is selected, and the larger the contact surface of TEC is, the smaller the thermal resistance is.
Therefore, an optimized TEC power supply system is particularly important for TEC operation. The power supply design adopts DC/DC voltage reduction to reduce an externally input power supply to a voltage suitable for the TEC to work, a schematic diagram of a power supply circuit 7 in the embodiment is shown in FIG. 11, LM25088 is used as a control core, and the circuit structure of FIG. 11 is adopted, so that the conversion efficiency can reach 98%, which means that only 2% of power consumption is converted into heat energy of the power supply system, for a closed installation environment, the system generates less heat and is more beneficial to the working environment of the TEC, otherwise the self-generated heat is accumulated continuously along with time to cause the temperature of a radiating fin end of the TEC to be gradually increased, the temperature difference between a cold surface and a hot surface of the TEC is increased, and the required refrigerating power is increased accordingly.
When the voltage output by the power supply system is selected, a comparison test is performed on the model of the TEC selected in the patent, and a test result is shown in fig. 13, which is a relationship diagram of TEC supply voltage and refrigeration power. Through the compared data, when the external input voltage is 24V, the TEC is operated to the maximum cooling power, that is, the cooling temperature is 4 ℃, the supply voltage output is 8.5V, the required power supply power P is the external input voltage × the external input current is 24V × 1.22A is 29.28W, the duty ratio output by the MCU is 0.8335 at the minimum, that is, when the output voltage of the TEC power supply system in the current system is 8.5V, the cooling efficiency of the TEC is the highest.
In view of the improvement of the above embodiment, in the present embodiment, as shown in fig. 11, the power supply circuit 19 includes a voltage conversion chip Up1The voltage conversion chip Up1And the first driving circuit 16 and the second driving circuit 17 are electrically connected to provide a first power supply for the first driving circuit 16 and the second driving circuit 17.
Voltage conversion chip Up1V ofINInput interface end passing coil inductor L22Fuse element F1Is electrically connected with a power supply; voltage conversion chip Up1V ofINThe input interface end also passes through a capacitor C87Grounding; voltage conversion chip Up1V ofINThe interface end also passes through a resistor Ruv1Is connected to the voltage conversion chip Up1The EN interface end of (1); voltage conversion chip Up1EN interface terminal through resistor Ruv2And (4) grounding.
Voltage conversion chip Up1V ofINThe input interface end is also connected with a field effect tube (Mp)1Is electrically connected. The voltage conversion chip Up1First field effect transistor interface terminal (namely voltage conversion chip Up)1H of (A) to (B)GInterface terminal) to the field effect transistor Mp1The voltage conversion chip Up1Second field effect transistor interface terminal (namely voltage conversion chip Up)1S ofWInterface terminal) to the field effect transistor Mp1Of the substrate. The voltage conversion chip Up1Current detecting terminal (i.e. voltage conversion chip Up)1C of (A)SInterface end) is electrically connected to the anode of a diode Dcs whose cathode is connected to the coil inductance Lout1And the voltage conversion chip Up1The voltage output end of the voltage conversion chip Up is electrically connected with the voltage output end of the voltage conversion chip Up1Is electrically connected to the first drive circuit 16 and the second drive circuit 17 for powering the first drive circuit 16 and the second drive circuit 17.
Voltage conversion chip Up1The second field effect transistor interface end is also connected to the voltage conversion chip Up through a resistor Rsns1CSG interface, voltage conversion chip Up1The CSG interface of (2) is grounded; voltage conversion chip Up1Voltage output terminal (i.e. voltage conversion chip Up)1OUT interface terminals) are also respectively passed through the capacitors Cout1Capacitor Cout2Grounding; voltage conversion chip Up1Is also sequentially connected with the resistor Rfbt1Resistance Rfbb1Grounding; voltage conversion chip Up1F of (A)BInterface end pass through resistor Rfbb1Ground, Rfbb1Grounded FBThe interface terminal is also connected with a capacitor Chf1Is connected to the voltage conversion chip Up1COMP interface terminal, voltage conversion chip Up1F of (A)BThe interface end also passes through the resistor Rcomp in turn1Capacitor Ccomp1Is connected to the voltage conversion chip Up1The COMP interface end of (1).
Voltage converterChange chip Up1The GND ground end of the transformer is grounded; voltage conversion chip Up1The AGND interface end of (1) is grounded; voltage conversion chip Up1The SS interface terminal of (1) is connected with a pass capacitor Css1Grounding; voltage conversion chip Up1R of (A) to (B)TInterface end pass through resistance R11Grounding; voltage conversion chip Up1Through a capacitor Cramp1Grounding; voltage conversion chip Up1V ofCCThe interface end passes through the resistor Rramp1Capacitor Cramp1The VCC interface end of the voltage conversion chip Up1 is grounded through a capacitor Cvcc 1; voltage conversion chip Up1DITH interface terminal pass-through capacitance Cdthr1And (4) grounding.
Finally, it is necessary to state that: the above contents are only used to help understanding the technical solution of the present invention, and should not be interpreted as limiting the scope of the present invention; insubstantial modifications and adaptations of the present invention as described above will occur to those skilled in the art and are intended to be covered by the present invention.
The above is only the basic embodiment of the present invention according to the basic technical solution given by the applicant, and the non-inventive improvement made by the skilled person in the industry with reference to the above basic concept shall belong to the protection scope of the present invention.

Claims (13)

1. The utility model provides a take temperature control's sample incubation device, includes orifice plate subassembly, tray subassembly, semiconductor temperature control assembly and radiator unit, its characterized in that: the hole plate component and the tray component are respectively a frame type disc-shaped body, and the hole plate component is nested in the tray component from top to bottom; the semiconductor temperature control assembly is arranged close to the outer side of the bottom of the tray forming the tray assembly; and the integrated sample incubation device with temperature control is formed by the heat dissipation component directly connected with the semiconductor temperature control component.
2. The sample incubation device with temperature control of claim 1, wherein: the tray assembly consists of a tray (3), an incubation bottom plate (4), a temperature sensor (6) and a spring clamp (9); the incubation bottom plate (4) is fixed on the inner bottom surface of the tray (3) through six tray connecting screws (13) to form a contact plate surface for containing the tray-type hole plate assembly; the temperature sensor (6) and the semiconductor refrigerator (5) are arranged on the incubation bottom plate (4); and a water-proof layer (14) is arranged between the contact surfaces between the incubation base plate (4) and the semiconductor refrigerator (5).
3. The sample incubation device with temperature control of claim 1, wherein: the heat dissipation assembly consists of a heat dissipation sheet (7) and a fan (8), wherein the heat dissipation sheet (7) is directly attached to the lower part of the semiconductor refrigerator (5), and the heat dissipation mechanism of the sample incubation device is formed by the semiconductor refrigerator (5) and the attached fan (8).
4. The sample incubation device with temperature control of claim 1, wherein: the pore plate component is a frame-type water containing disc consisting of a cell pore plate (1) and a pore plate support frame (2), wherein the bottom surface of the inner side of the pore plate support frame (2) is provided with a concave spherical surface which is matched with the spherical surface at the bottom of the cell pore plate (1), and the liquid level of the concave spherical surface does not exceed the top surface of the cell pore plate (1); the incubation effect is better ensured.
5. The sample incubation device with temperature control of claim 1, wherein: the semiconductor temperature control assembly is composed of semiconductor refrigerators (5) which are attached to the lower part of the incubation bottom plate (4) and are arranged on the left and the right respectively; it includes: the master control circuit is used for outputting a first control signal and a second control signal;
the first driving circuit is electrically connected with the main control circuit and used for receiving a first control signal output by the main control circuit and driving according to the first control signal;
the second driving circuit is electrically connected with the main control circuit and used for receiving a second control signal output by the main control circuit and driving according to the second control signal;
the temperature control unit is respectively electrically connected with the first drive circuit and the second drive circuit, and the first drive circuit and the second drive circuit drive and control the working mode of the temperature control unit;
and the power supply circuit is electrically connected with the first driving circuit and the second driving circuit and used for supplying power to the first driving circuit and the second driving circuit.
6. The temperature-controlled sample incubation device of claim 5 wherein the first drive circuit comprises a first left half-bridge drive sub-circuit and a first right half-bridge drive sub-circuit electrically connected to each other:
the input end of the first left half-bridge driving sub-circuit is electrically connected with the output end of the main control circuit respectively, the output end of the first left half-bridge driving sub-circuit is electrically connected with the temperature control unit, and the power supply end of the first left half-bridge driving sub-circuit is electrically connected with the power supply circuit;
the input end of the first right half-bridge driving sub-circuit is electrically connected with the output end of the main control circuit respectively, the output end of the first right half-bridge driving sub-circuit is electrically connected with the temperature control unit, and the power supply end of the first right half-bridge driving sub-circuit is electrically connected with the power supply circuit.
7. The sample incubation device with temperature control of claim 5, wherein: the second drive circuit comprises a second left half-bridge drive sub-circuit and a second right half-bridge drive sub-circuit electrically connected to each other:
the input end of the second left half-bridge driving sub-circuit is electrically connected with the output end of the main control circuit respectively, the output end of the second left half-bridge driving sub-circuit is electrically connected with the temperature control unit, and the power supply end of the second left half-bridge driving sub-circuit is electrically connected with the power supply circuit;
the input end of the second right half-bridge driving sub-circuit is electrically connected with the output end of the main control circuit respectively, the output end of the second right half-bridge driving sub-circuit is electrically connected with the temperature control unit, and the power supply end of the second right half-bridge driving sub-circuit is electrically connected with the power supply circuit.
8. The sample incubation device with temperature control of claim 6, wherein: the first left half-bridge drive sub-circuit comprises:
the input end of the first left half-bridge driving chip is electrically connected with the main control circuit and is used for receiving a first control signal output by the main control circuit;
the first output end of the first left half-bridge driving chip passes through a resistor R8And field effect transistor M2The first output end of the first left half-bridge driving chip is also connected with a diode D1Is electrically connected to the cathode of the diode D1And the field effect transistor M2Is electrically connected with the grid electrode of the field effect transistor M2Is electrically connected with the power supply circuit;
the second output end of the first left half-bridge driving chip passes through a resistor R14And field effect transistor M3The second output end of the first left half-bridge driving chip is also connected with a diode D5Is electrically connected to the cathode of the diode D5And the field effect transistor M3Is electrically connected with the grid electrode of the field effect transistor M3And the field effect transistor M2Is electrically connected with the source electrode of the field effect transistor M3The source of (2) is grounded;
the third output end of the first left half-bridge driving chip is respectively connected with the field effect transistor M2Source electrode of, said field effect transistor M3The third output end of the first left half-bridge driving chip is also connected with the drain electrode of the first left half-bridge driving chip through an inductor L1And is electrically connected with the temperature control unit.
9. The sample incubation device with temperature control of claim 6, wherein: the first right half-bridge drive sub-circuit comprises:
the input end of the first right half-bridge driving chip is electrically connected with the main control circuit and is used for receiving a first control signal output by the main control circuit;
the first output end of the first right half-bridge driving chip passes through a resistor R9And field effect transistor M1The first output end of the first right half-bridge driving chip is also connected with a diode D2Is electrically connected to the cathode of the diode D2And the field effect transistor M1Is electrically connected with the grid electrode of the field effect transistor M1Is electrically connected with the power supply circuit;
the second output end of the first right half-bridge driving chip passes through a resistor R15And field effect transistor M4The second output end of the first right half-bridge driving chip is also connected with a diode D6Is electrically connected to the cathode of the diode D6And the field effect transistor M4Is electrically connected with the grid electrode of the field effect transistor M4And the field effect transistor M1Is electrically connected with the source electrode of the field effect transistor M4The source of (2) is grounded;
the third output end of the first right half-bridge driving chip is respectively connected with the field effect transistor M1Source electrode of, said field effect transistor M4The third output end of the first right half-bridge driving chip is also electrically connected with the temperature control unit through an inductor L2.
10. The sample incubation device with temperature control of claim 7, wherein: the second left half-bridge drive sub-circuit comprises:
the input end of the second left half-bridge driving chip is electrically connected with the main control circuit and is used for receiving a second control signal output by the main control circuit;
the first output end of the second left half-bridge driving chip passes through a resistor R23And field effect transistor M5The first output end of the second left half-bridge driving chip is also connected with a diode D7Is electrically connected to the cathode of the diode D7And the field effect transistor M5Is electrically connected with the grid electrode of the field effect transistor M5And the power supplyElectrically connecting the circuit;
the second output end of the second left half-bridge driving chip passes through a resistor R29And field effect transistor M7The second output end of the second left half-bridge driving chip is also connected with a diode D11Is electrically connected to the cathode of the diode D11And the field effect transistor M7Is electrically connected with the grid electrode of the field effect transistor M7And the field effect transistor M5Is electrically connected with the source electrode of the field effect transistor M7The source of (2) is grounded;
the third output end of the second left half-bridge driving chip is respectively connected with the field effect transistor M5Source electrode of, said field effect transistor M7The third output end of the second left half-bridge driving chip is also connected with the drain electrode of the second left half-bridge driving chip through an inductor L3And is electrically connected with the temperature control unit.
11. The sample incubation device with temperature control of claim 7, wherein: the second right half-bridge drive sub-circuit comprises:
the input end of the second right half-bridge driving chip is electrically connected with the main control circuit and is used for receiving a second control signal output by the main control circuit;
the first output end of the second right half-bridge driving chip passes through a resistor R24And field effect transistor M6The first output end of the second right half-bridge driving chip is also connected with a diode D8Is electrically connected to the cathode of the diode D8And the field effect transistor M6Is electrically connected with the grid electrode of the field effect transistor M6Is electrically connected with the power supply circuit;
the second output end of the second right half-bridge driving chip passes through a resistor R30And field effect transistor M8The second output end of the second right half-bridge driving chip is also connected with a diode D12Is electrically connected to the cathode of the diode D12And the field effect transistor M8Is electrically connected with the grid electrode of the field effect transistor M8And the field effect transistor M6Is electrically connected with the source electrode of the field effect transistor M8The source of (2) is grounded;
the third output end of the second right half-bridge driving chip is respectively connected with the field effect transistor M6Source electrode of, said field effect transistor M8The third output end of the second right half-bridge driving chip is also connected with the drain electrode of the second right half-bridge driving chip through an inductor L3And is electrically connected with the temperature control unit.
12. The sample incubation device with temperature control of any one of claims 5 to 11, wherein: the power supply circuit includes:
the input end of the voltage conversion chip passes through a coil inductor L22Fuse element F1Is electrically connected with a power supply; the voltage conversion chip is also electrically connected with the first driving circuit and the second driving circuit and provides a first power supply for the electrical connection of the first driving circuit and the second driving circuit;
the interface end of the first field effect tube of the voltage conversion chip is connected to the Mp1The interface end of the second field effect transistor of the voltage conversion chip is connected to the field effect transistor Mp1The source electrode of (1), the field effect transistor Mp1The drain electrode of the voltage conversion chip is electrically connected with the input end of the voltage conversion chip;
the current detection end of the voltage conversion chip is electrically connected with the anode of a diode Dcs, and the cathode of the diode Dcs is connected with the coil inductor Lout1And the voltage output end of the voltage conversion chip is electrically connected with the first driving circuit and the second driving circuit.
13. The sample incubation device with temperature control of any one of claims 5 to 11, wherein: the temperature control unit comprises a first temperature control device and a second temperature control device; the first temperature control device is electrically connected with the first driving circuit, and the second temperature control device is electrically connected with the second driving circuit.
CN201822053900.9U 2018-12-07 2018-12-07 Take temperature control's sample incubation device Active CN209979637U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109799328A (en) * 2018-12-07 2019-05-24 上海厦泰生物科技有限公司 A kind of temperature controlled sample incubation device of band

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109799328A (en) * 2018-12-07 2019-05-24 上海厦泰生物科技有限公司 A kind of temperature controlled sample incubation device of band
CN109799328B (en) * 2018-12-07 2024-04-26 上海厦泰生物科技有限公司 Sample incubation device with temperature control

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