CN109799328A - A kind of temperature controlled sample incubation device of band - Google Patents
A kind of temperature controlled sample incubation device of band Download PDFInfo
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- CN109799328A CN109799328A CN201811497056.7A CN201811497056A CN109799328A CN 109799328 A CN109799328 A CN 109799328A CN 201811497056 A CN201811497056 A CN 201811497056A CN 109799328 A CN109799328 A CN 109799328A
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- Apparatus Associated With Microorganisms And Enzymes (AREA)
Abstract
The temperature controlled sample of a kind of band of the present invention incubates device, including orifice plate components mechanism, pallet component mechanism, semiconductor temperature-control components mechanism and radiating subassembly mechanism, the orifice plate components mechanism, pallet component mechanism are a frame-type discoid body, and the two is nested together from top to bottom；The semiconductor temperature-control components mechanism is arranged next to the tray bottom of pallet component mechanism；And being integrally formed of radiating subassembly mechanism by being directly connected to semiconductor temperature-control components mechanism with temperature controlled sample incubate device.This temperature controlled sample of band incubates device, and not only entire mechanism is more compact, and space is greatly saved；It realizes Double-direction Temperature control, incubation temperature can be set according to user's test request；It is more preferable to guarantee that each temperature in borehole of cell orifice plate is consistent by using water as incubation medium；When setting temperature relative ambient temperature is very low, the water dew generated in pallet will not cause to damage to instrument；With good popularizing value.
Description
Technical field
The present invention relates to test blood of human body, the in-vitro diagnosis medical instrument of urine equal samples, specifically a kind of realizations pair
Sample carries out incubating and can realizing that a kind of temperature controlled sample of temperature controlled band incubates device in real time.
Background technique
Medical in-vitro diagnosis equipment, which is mainly realized, detects blood of human body, urine equal samples, and partial test is (such as
Blood cell test), especially during the batch testing of cell orifice plate, to guarantee cell activity, need to carry out temperature to sample
Degree control, to obtain optimal test result.Meanwhile for different test sample projects, the temperature of required control is not yet
Together, general temperature requirement range is at 4~37 DEG C.
Medical vitro detection equipment is mainly to reagent and reactive material (mixture of reagent and sample) currently on the market
Temperature control is carried out, wherein reagent incubates based on reagent refrigeration, and the incubation general control of reactive material is at 37 DEG C or so.To thin
The sample of hilum plate incubate less.
In addition, in the use process of flow cytometer and various Protein Detection instrument in the field of medicine, it is often necessary to take
With autosampler.Autosampler is a kind of intelligent, automation sample introduction instrument, need to only set sample introduction parameter (including
Instrument inner cell environment temperature), be put into sample to be tested, automatic sampling process can be completed.Contain in view of being detected in cell
Enzymatic activity is most strong when the various enzymes having are within the scope of optimal temperature, and enzymatic reaction is fastest.For example: in suitable temperature
In range, temperature is every to increase 10 DEG C, and enzymatic reaction speed can correspondingly increase 1-2 times.Due in different organisms enzyme it is most suitable
Suitable temperature is different, therefore sample introduction platform temperature is controllably particularly important.
In addition, also needing to add fluorochrome in cell detection, after different cells is dyed by fluorochrome, same
The fluorescence signal of different wave length can be inspired under a kind of irradiation of laser, in the process, the environment of tested cell need to keep steady
It is qualitative, it is desirable that precision is within ± 0.1 DEG C.Many experiments not only need to complete at a certain temperature, or to pass through
Temperature compares test, and therefore, experimenter often accurately controls the temperature of reactant.
Therefore, in order to be accurately controlled to temperature, meet requirement of the checkout procedure to environment temperature, the present invention mentions
A kind of efficient temperature control system for automatic sample handling system is supplied.
Summary of the invention
In terms of the purpose of the present invention includes following two: one, it is desirable to provide it is a kind of can structure according to user's testing requirement
Device is incubated with temperature controlled sample；Secondly, it is desirable to provide a kind of height for the automatic sample handling system that device is incubated for sample
Temperature control system is imitated, purpose is by being precisely controlled temperature, the accuracy and reliability of ensuring inspection data.
This temperature controlled sample of band incubates device, including sample incubates mechanism and efficient temperature control system；Orifice plate
Component, pallet component, semiconductor temperature-control component and radiating subassembly, it is characterised in that: the orifice plate component, pallet component machine
Structure is a frame-type discoid body, and the two is nested together from top to bottom；The semiconductor temperature-control components mechanism is next to support
The tray bottom of disk components mechanism is arranged；And the radiating subassembly mechanism structure by being directly connected to semiconductor temperature-control components mechanism
That integrally changes incubates device with temperature controlled sample.
The pallet component is made of pallet 3, incubation bottom plate 4, temperature sensor 6, spring clip 9；The incubation bottom
Plate 4 is fixed on 6 inner bottom surface of pallet by six pallet joint bolts 13, constitutes the contact for containing disc type orifice plate components mechanism
Disk；The incubation bottom plate 4 is equipped with temperature sensor 6 and semiconductor cooler 5；And in pallet 3 and incubate bottom plate 4
Between contact surface between be equipped with waterproof layer 14.
The radiating subassembly is made of cooling fin 7 and fan 8, and the cooling fin 7 is directly posted in semiconductor refrigerating
Device 5 is arranged, and forms the cooling mechanism that sample incubates device by the subsidiary fan 8 of semiconductor cooler 5.
The orifice plate component forms frame-type water dish, aperture plate by cell orifice plate 1 and orifice-baffle support frame 2 for one
2 inside bottom surface of support frame is equipped with concave spherical surface, matches with the bottom spherical surface of cell orifice plate 1, and liquid level is no more than cell orifice plate
1 top surface；It preferably ensure that the effect of incubation.
The semiconductor temperature-control component is made of the semiconductor cooler 5 for being close to incubate 4 lower part of bottom plate, left and right is set up separately；
It includes: governor circuit, for exporting first control signal, second control signal；
First driving circuit is electrically connected with the governor circuit, for receiving the first control of the governor circuit output
Signal, and driven according to the first control signal；
Second driving circuit is electrically connected with the governor circuit, for receiving the second control of the governor circuit output
Signal, and driven according to the second control signal；
Temperature conditioning unit is electrically connected with first driving circuit, the second driving circuit respectively, first driving circuit,
The operating mode of temperature conditioning unit described in second driving circuit drive control；
Power supply circuit is electrically connected with first driving circuit, the second driving circuit, for electric to first driving
Road, the second drive circuitry.
First driving circuit includes the first left half-bridge driven sub-circuit being electrically connected to each other and the first right half-bridge driven
Sub-circuit:
The input terminal of the first left half-bridge driven sub-circuit is electrically connected with the output end of the governor circuit respectively, institute
The output end for stating the first left half-bridge driven sub-circuit is electrically connected with the temperature conditioning unit, the first left half-bridge driven sub-circuit
Power end be electrically connected with the power supply circuit；
The input terminal of the first right half-bridge driven sub-circuit is electrically connected with the output end of the governor circuit respectively, institute
The output end for stating the first right half-bridge driven sub-circuit is electrically connected with the temperature conditioning unit, the first right half-bridge driven sub-circuit
Power end be electrically connected with the power supply circuit.
Second driving circuit includes the second left half-bridge driven sub-circuit being electrically connected to each other and the second right half-bridge driven
Sub-circuit:
The input terminal of the second left half-bridge driven sub-circuit is electrically connected with the output end of the governor circuit respectively, institute
The output end for stating the second left half-bridge driven sub-circuit is electrically connected with the temperature conditioning unit, the second left half-bridge driven sub-circuit
Power end be electrically connected with the power supply circuit；
The input terminal of the second right half-bridge driven sub-circuit is electrically connected with the output end of the governor circuit respectively, institute
The output end for stating the second right half-bridge driven sub-circuit is electrically connected with the temperature conditioning unit, the second right half-bridge driven sub-circuit
Power end be electrically connected with the power supply circuit.
The first left half-bridge driven sub-circuit includes:
The input terminal of first left half-bridge driven chip, the first left half-bridge driven chip is electrically connected with the governor circuit
It connects, for receiving the first control signal of the governor circuit output；
First output end of the first left half-bridge driven chip passes through resistance R8With field-effect tube M2Grid electrical connection,
First output end of the first left half-bridge driven chip also with diode D1Cathode electrical connection, the diode D1Anode
With the field-effect tube M2Grid electrical connection, the field-effect tube M2Drain electrode be electrically connected with the power supply circuit；
The second output terminal of the first left half-bridge driven chip passes through resistance R14With field-effect tube M3Grid be electrically connected
Connect, the second output terminal of the first left half-bridge driven chip also with diode D5Cathode electrical connection, the diode D5's
Anode and the field-effect tube M3Grid electrical connection, the field-effect tube M3Drain electrode and the field-effect tube M2Source electrode electricity
Connection, the field-effect tube M3Source electrode ground connection；
The third output end of the first left half-bridge driven chip respectively with the field-effect tube M2Source electrode, the field
Effect pipe M3Drain electrode electrical connection, the third output end of the first left half-bridge driven chip also passes through inductance L1With the temperature control
Unit electrical connection.
The first right half-bridge driven sub-circuit includes:
The input terminal of first right half-bridge driven chip, the first right half-bridge driven chip is electrically connected with the governor circuit
It connects, for receiving the first control signal of the governor circuit output；
First output end of the first right half-bridge driven chip passes through resistance R9With field-effect tube M1Grid electrical connection,
First output end of the first right half-bridge driven chip also with diode D2Cathode electrical connection, the diode D2Anode
With the field-effect tube M1Grid electrical connection, the field-effect tube M1Drain electrode be electrically connected with the power supply circuit；
The second output terminal of the first right half-bridge driven chip passes through resistance R15With field-effect tube M4Grid be electrically connected
Connect, the second output terminal of the first right half-bridge driven chip also with diode D6Cathode electrical connection, the diode D6's
Anode and the field-effect tube M4Grid electrical connection, the field-effect tube M4Drain electrode and the field-effect tube M1Source electrode electricity
Connection, the field-effect tube M4Source electrode ground connection；
The third output end of the first right half-bridge driven chip respectively with the field-effect tube M1Source electrode, the field
Effect pipe M4Drain electrode electrical connection, the third output end of the first right half-bridge driven chip also passes through inductance L2 and the temperature
Control unit electrical connection.
The second left half-bridge driven sub-circuit includes:
The input terminal of second left half-bridge driven chip, the second left half-bridge driven chip is electrically connected with the governor circuit
It connects, for receiving the second control signal of the governor circuit output；
First output end of the second left half-bridge driven chip passes through resistance R23With field-effect tube M5Grid be electrically connected
Connect, the first output end of the second left half-bridge driven chip also with diode D7Cathode electrical connection, the diode D7's
Anode and the field-effect tube M5Grid electrical connection, the field-effect tube M5Drain electrode be electrically connected with the power supply circuit；
The second output terminal of the second left half-bridge driven chip passes through resistance R29With field-effect tube M7Grid be electrically connected
Connect, the second output terminal of the second left half-bridge driven chip also with diode D11Cathode electrical connection, the diode D11
Anode and the field-effect tube M7Grid electrical connection, the field-effect tube M7Drain electrode and the field-effect tube M5Source electrode
Electrical connection, the field-effect tube M7Source electrode ground connection；
The third output end of the second left half-bridge driven chip respectively with the field-effect tube M5Source electrode, the field
Effect pipe M7Drain electrode electrical connection, the third output end of the second left half-bridge driven chip also passes through inductance L3With the temperature control
Unit electrical connection.
The second negative drive sub-circuits include:
The input terminal of second right half-bridge driven chip, the second right half-bridge driven chip is electrically connected with the governor circuit
It connects, for receiving the second control signal of the governor circuit output；
First output end of the second right half-bridge driven chip passes through resistance R24With field-effect tube M6Grid be electrically connected
Connect, the first output end of the second right half-bridge driven chip also with diode D8Cathode electrical connection, the diode D8's
Anode and the field-effect tube M6Grid electrical connection, the field-effect tube M6Drain electrode be electrically connected with the power supply circuit；
The second output terminal of the second right half-bridge driven chip passes through resistance R30With field-effect tube M8Grid be electrically connected
Connect, the second output terminal of the second right half-bridge driven chip also with diode D12Cathode electrical connection, the diode D12
Anode and the field-effect tube M8Grid electrical connection, the field-effect tube M8Drain electrode and the field-effect tube M6Source electrode
Electrical connection, the field-effect tube M8Source electrode ground connection；
The third output end of the second right half-bridge driven chip respectively with the field-effect tube M6Source electrode, the field
Effect pipe M8Drain electrode electrical connection, the third output end of the second right half-bridge driven chip also passes through inductance L3With the temperature control
Unit electrical connection.
The power supply circuit includes:
The input terminal of voltage conversion chip, the voltage conversion chip passes through coil inductance L22, insurance device F1With power supply
Power electric connection；The voltage conversion chip is also electrically connected with first driving circuit, the second driving circuit, is described the
One drive circuit, the electrical connection of the second driving circuit provide the first power supply；
First field-effect tube interface end of the voltage conversion chip is connected to field-effect tube Mp1Grid, the voltage
Second field-effect tube interface end of conversion chip is connected to field-effect tube Mp1Source electrode, the field-effect tube Mp1Drain electrode and institute
State the input terminal electrical connection of voltage conversion chip；
The current detecting end of the voltage conversion chip is electrically connected with the anode of diode Dcs, the diode Dcs's
Cathode passes through coil inductance Lout1It is electrically connected with the voltage output end of the voltage conversion chip, the voltage conversion chip
Voltage output end is electrically connected with the first driving circuit and the second driving circuit.
The temperature conditioning unit includes the first temperature controlling device and the second temperature controlling device:
First temperature controlling device is electrically connected with first driving circuit, second temperature controlling device and described second
Driving circuit electrical connection.
The temperature controlled sample of this band provided according to above technical scheme incubates device, and not only entire mechanism is tighter
It gathers, space is greatly saved.
There is following technical characterstic simultaneously:
1) it realizes Double-direction Temperature control, incubation temperature can be set according to user's test request；
2) more preferable to guarantee that each temperature in borehole of cell orifice plate is consistent using water as incubation medium；
3) water-proof function, when setting temperature relative ambient temperature is very low, the water dew generated in pallet will not make instrument
At damage；
4) spring clip is equipped with to cell orifice plate, can effectively ensure that cell hole Board position does not move in test process.
5) temperature control system can accurately control temperature, the accuracy of data when having ensured experiment, reliable
Property；The heat given out can be reduced as far as possible simultaneously, improve refrigerating efficiency
6) temperature control is carried out by using TEC, there is the advantages that small in size, stability is high, cleaning.
7) the power supply circuit high conversion efficiency used, the heat of generation is small, and the influence for environment temperature is small, is conducive to this
Accurate control of the temperature control system to temperature.
Detailed description of the invention
Fig. 1 is the integrality schematic diagram that sample of the invention incubates device；
Fig. 2 is the longitudinal sectional drawing of Fig. 1；
Fig. 3 is the schematic diagram of orifice plate components mechanism of the present invention；
Fig. 4 is the schematic diagram of pallet component mechanism of the present invention；
Fig. 5 is the schematic diagram of radiating subassembly mechanism of the present invention；
Fig. 6 is the temperature control principle block diagram of high efficiency temperature controlled system of the invention；
Fig. 7 is the temperature control principle structural schematic diagram of high efficiency temperature controlled system of the invention；
Fig. 8 is the temperature distribution model schematic diagram of temperature conditioning unit of the invention；
Fig. 9 is the circuit structure diagram of the first driving circuit in the present invention in high efficiency temperature controlled system；
Figure 10 is the circuit structure diagram of the second driving circuit in the present invention in high efficiency temperature controlled system；
Figure 11 is the power supply circuit construction figure of high efficiency temperature controlled system in the present invention；
Figure 12 is the Carnot cycle coefficient distribution schematic diagram in one embodiment of the present of invention；
Figure 13 is the relational graph of the supply voltage and refrigeration work consumption in one embodiment of the present of invention.
In figure:
1- cell orifice plate 2- orifice-baffle support frame 3- pallet 4- incubates bottom plate 5- semiconductor cooler 6- temperature sensor
7- cooling fin 8- fan 9- spring clip 10- spring clip joint bolt 11- fan joint bolt 12- cooling fin joint bolt
13- pallet joint bolt 14- waterproof sealing glue-line 15- governor circuit 16- the first driving circuit the second driving circuit of 17-
18- temperature conditioning unit 19- power supply circuit 51- the first temperature controlling device the second temperature controlling device of 52-.
Specific embodiment
The present invention is further described below in conjunction with the attached body of specification, and gives the embodiment of the present invention.
Fig. 1 is overall structure diagram of the invention；
Fig. 2 is the schematic diagram of overall structure of the present invention, and the present apparatus realizes the temperature control of contained sample in cell orifice plate 1,
It is mainly made of following 4 part: orifice plate component, pallet component, semiconductor cooler 5 and radiating subassembly.Wherein semiconductor system
Cooler 5 can realize refrigeration and heating, be determined by the current direction by its two port.It is close to temperature in 5 top surface of semiconductor cooler
Bottom plate 4 is educated, and is coated with heat conductive silica gel in contact surface, guarantees good contact and conductive performance；It incubates and temperature is installed in 4 hole of bottom plate
Sensor 6 is spent, realizes the real-time monitoring for incubating 4 temperature of bottom plate；It is affixed by pallet joint bolt with pallet 3 to incubate bottom plate 4,
Top putting hole board group part, thus by the temperature conduction to orifice plate component for incubating bottom plate 4；The orifice-baffle support frame 2 of orifice plate component
Side by the elastic force of spring clip 9, guarantee that orifice plate component fixed 5 bottom surface of semiconductor cooler in pallet 3 is close to dissipate
Hot component, and it is coated with heat conductive silica gel in contact surface, guarantee good contact and conductive performance；Wherein 2 inside bottom of orifice-baffle support frame
Face is equipped with concave spherical surface, matches with the bottom spherical surface of cell orifice plate 1, and liquid level is no more than the top surface of cell orifice plate 1；More preferably
The effect that ensure that incubation.
Fig. 3 is the schematic diagram of orifice plate component of the present invention, and orifice plate component is made of cell orifice plate 1 and orifice-baffle support frame 2,
Middle cell orifice plate 1 is that medical standardized product, generally PC or other plastic material products, cell orifice plate are closed using aluminium in the market
Gold or other thermally conductive preferable materials inject suitable water in orifice-baffle support frame 2 and guarantee that the liquid level of water is no more than cell orifice plate
1 top surface.
Fig. 4 be pallet component of the present invention schematic diagram, pallet component between orifice plate component and semiconductor cooler 5,
It is mainly made of pallet 3, incubation bottom plate 4, temperature sensor 6, spring clip 9, incubates bottom plate 4 and pass through six pallet joint bolts
13 are fixed on pallet, when the setting temperature relative ambient temperature for incubating bottom plate 4 is very low and ambient humidity is larger, incubate bottom
4 surface of plate have water dew generate, for protection incubate 4 bottom of bottom plate semiconductor cooler 5, pallet 3 and incubate bottom plate 4 it
Between contact surface be coated with waterproof gasket cement, with guarantee water dew be maintained in pallet 3；Temperature sensor 6 is for testing entertainment bottom plate 4
Real time temperature, be mounted on incubate bottom plate 4 hole in；Spring clip 9 is fixed on pallet 3 by spring clip joint bolt 10.
Fig. 5 is the schematic diagram of radiating subassembly of the present invention, and radiating subassembly major function is to the bottom surface of semiconductor cooler 5
It radiates, primary fins 7 and fan 8 form, and fan 8 is fixed on cooling fin 7 by four fan joint bolts 11
On, and fan 8 is dried against cooling fin, air inlet is the air of device local environment.When device is needed to incubation bottom plate 4
Freezed (heating), i.e., when setting temperature is lower than (being higher than) environment temperature, the bottom surface temperature of semiconductor cooler 5 increases (drop
It is low), to be transmitted on cooling fin 7, realize that convection current balances environment temperature and heatsink temperature by the operating of fan 8.
As shown in Figure 6,7, the present invention provides one of a kind of efficient temperature control system for automatic sample handling system
Embodiment, comprising:
Governor circuit 15, for exporting first control signal, second control signal；
First driving circuit 16 is electrically connected with the governor circuit 15, for receiving that the governor circuit 15 exports
One control signal, and driven according to the first control signal；
Second driving circuit 17 is electrically connected with the governor circuit 15, for receiving that the governor circuit 15 exports
Two control signals, and driven according to the second control signal；
Temperature conditioning unit 18 is electrically connected with first driving circuit 16, the second driving circuit 17 respectively, and described first drives
The operating mode of temperature conditioning unit 18 described in dynamic circuit 16,17 drive control of the second driving circuit；
Power supply circuit 19 is electrically connected with first driving circuit 16, the second driving circuit 17, is used for described first
Driving circuit 16, the power supply of the second driving circuit 17.
Specifically, in the lab, experimenter is frequently necessary to accurately control the temperature of experiment reaction.Such as
In experiment relevant to cell, for the enzyme in cell under Optimal Temperature range, activity is most strong, and enzymatic reaction speed is maximum.Suitable
Within the scope of suitable temperature, temperature is every to increase 10 DEG C, and enzymatic reaction speed can correspondingly increase 1~2 times.In addition to this, in cell
In detection, need to add fluorescent dye, different cells can be swashed under the irradiation of same laser by after fluorescent dyeing
The fluorescence signal of different wave length is issued, in the process, cellular environment temperature need to keep stable, and precision is in ± 0.1 DEG C.
In the present embodiment, temperature conditioning unit 18, the first driving circuit 16, the second driving circuit 17, governor circuit can be passed through
15, power supply circuit 19 completes the control of temperature.Governor circuit can export first control signal and the second control by MCU
Signal processed.Staff can realize the control to temperature by MCU.
Temperature conditioning unit 18 can be made of, this reality conductor temperature control device TEC (ThermoelectricCooler)
It applies and uses TEC as temperature control core devices in example, be the Peltier effect using semiconductor material, be DC current by two
When the galvanic couple of kind semiconductor material composition, one end heat absorption, one end heat release.TEC includes some p-types and N-type to (group), they
It is connected together, and is clipped between two ceramic electrodes by electrode；When there is electric current to flow through from TEC, the heat of electric current generation
The other side can be passed to from the side of TEC, " heat " side and " cold " side are generated on TEC.Temperature control is carried out using TEC, there is body
The advantages that product is small, and stability is high, cleaning.
For the improvement of above-described embodiment, in the present embodiment, first driving circuit 16, as shown in figure 9, including the
One left half-bridge driven sub-circuit and the first right half-bridge driven sub-circuit.
The first left half-bridge driven sub-circuit includes the first left half-bridge driven chip U2, chip model can be
IR2011S；First left half-bridge driven chip U2Input terminal be electrically connected with the governor circuit 1, specifically, the first left half-bridge
Driving chip U2Input terminal include Hin input terminal and Lin input terminal, receive the first control that the governor circuit 1 exports respectively
Signal processed.
The first left half-bridge driven chip U2The first output end (i.e. the first left half-bridge driven chip U in Fig. 92HO
Interface end) pass through resistance R8With field-effect tube M2Grid electrical connection, the first left half-bridge driven chip U2First output
End also with diode D1Cathode electrical connection, the anode of the diode D1 and the field-effect tube M2Grid electrical connection, institute
State field-effect tube M2Drain electrode be electrically connected with the power supply circuit 19.
Second output terminal (i.e. the first left half-bridge driven chip U in Fig. 9 of the first left half-bridge driven chip U22LO
Interface end) pass through resistance R14With field-effect tube M3Grid electrical connection, the first left half-bridge driven chip U2Second output
End also with diode D5Cathode electrical connection, the diode D5Anode and the field-effect tube M3Grid electrical connection, institute
State field-effect tube M3Drain electrode and the field-effect tube M2Source electrode electrical connection, the field-effect tube M3Source electrode ground connection.
The first left half-bridge driven chip U2Third output end (i.e. the first left half-bridge driven chip U in Fig. 92Vs
Interface end) respectively with the field-effect tube M2Source electrode, the field-effect tube M3Drain electrode electrical connection, the first left half-bridge drives
Dynamic chip U2Third output end also pass through inductance L1It is electrically connected with the temperature conditioning unit 4, provides control positive electricity to temperature conditioning unit 4
Pressure.
First left half-bridge driven chip U2Vb interface end pass through capacitor C7It is connected to the first left half-bridge driven chip U2's
Third output end, the first left half-bridge driven chip U2Vb interface end also pass through resistance R11It is connected to diode D3Cathode, institute
State diode D3Anode be connected to the first left half-bridge driven chip U2Power Vcc interface end；First left half-bridge driven chip
U2Power Vcc interface end power supply 12V is connected to by resistance R12；The power Vcc interface of first left half-bridge driven chip U2
End also passes through capacitor C13It is connected to the first left half-bridge driven chip U2Com interface end, the first left half-bridge driven chip U2's
Com interface end ground connection.
The first right half-bridge driven sub-circuit includes the first right half-bridge driven chip U3, chip model can be
IR2011S；First right half-bridge driven chip U3Input terminal be electrically connected with the governor circuit 1, specifically, the first right half-bridge
Driving chip U3Input terminal also include Hin input terminal and Lin input terminal, receive the governor circuit 1 exports first respectively
Control signal.
The first output end (i.e. the first right half-bridge driven chip U in Fig. 9 of the first right half-bridge driven chip U33HO
Interface end) pass through resistance R9With field-effect tube M1Grid electrical connection, the first right half-bridge driven chip U3First output
End also with diode D2Cathode electrical connection, the diode D2Anode and the field-effect tube M1Grid electrical connection, institute
State field-effect tube M1Drain electrode be electrically connected with the power supply circuit 5.
The first right half-bridge driven chip U3Second output terminal (i.e. the first right half-bridge driven chip U in Fig. 93LO
Interface end) pass through resistance R15With field-effect tube M4Grid electrical connection, the first right half-bridge driven chip U3Second output
End also with diode D6Cathode electrical connection, the diode D6Anode and the field-effect tube M4Grid electrical connection, institute
State field-effect tube M4Drain electrode and the field-effect tube M1Source electrode electrical connection, the field-effect tube M4Source electrode ground connection.
The first right half-bridge driven chip U3Third output end (i.e. the first right half-bridge driven chip U in Fig. 93Vs
Interface end) respectively with the field-effect tube M1Source electrode, the field-effect tube M4Drain electrode electrical connection, the first right half-bridge drives
Dynamic chip U3Third output end also pass through inductance L2It is electrically connected with the temperature conditioning unit 18, it is negative to provide control to temperature conditioning unit 18
Voltage.
First right half-bridge driven chip U3Vb interface end pass through capacitor C8It is connected to the first right half-bridge driven chip U3's
Third output end, the first right half-bridge driven chip U3Vb interface end also pass through resistance R10It is connected to diode D4Cathode, institute
State diode D4Anode be connected to the first right half-bridge driven chip U3Power Vcc interface end；First right half-bridge driven chip
U3Power Vcc interface end pass through resistance R13It is connected to working power 12V；First right half-bridge driven chip U3Power Vcc connect
Mouth end also passes through capacitor C14It is connected to the first right half-bridge driven chip U3Com interface end, the first right half-bridge driven chip U3's
Com interface end ground connection.
The first left half-bridge driven is from the field-effect tube M in circuit2Drain electrode also with the first right half-bridge driven from circuit
In field-effect tube M1Drain electrode electrical connection；Field-effect tube M2Drain electrode and field-effect tube M1Drain electrode also pass through capacitor C4It connects
Ground；Field-effect tube M2Drain electrode and field-effect tube M1Drain electrode also pass through capacitor C5Ground connection.
Inductance L1One end and the first left half-bridge driven chip U2Third output end electrical connection, inductance L1The other end with
The temperature conditioning unit 4 is electrically connected, inductance L1The other end also pass through capacitor C11Ground connection；Inductance L2One end and the first right half-bridge
Driving chip U3Third output end electrical connection, inductance L2The other end be electrically connected with the temperature conditioning unit 4, inductance L2It is another
End also passes through capacitor C12Ground connection；Inductance L1The other end pass through capacitor C6With inductance L2The other end electrical connection.
For the improvement of above-described embodiment, in the present embodiment, second driving circuit 3, as shown in Figure 10, including
Two left half-bridge driven sub-circuits and the second right half-bridge driven sub-circuit.
The second left half-bridge driven sub-circuit includes the second left half-bridge driven chip U6, chip model can be
IR2011S；Second left half-bridge driven chip U6Input terminal be electrically connected with the governor circuit 1, specifically, the second left half-bridge
Driving chip U6Input terminal include Hin input terminal and Lin input terminal, receive the first control that the governor circuit 1 exports respectively
Signal processed.
The second left half-bridge driven chip U6The first output end (i.e. the second left half-bridge driven chip U in Figure 106HO
Interface end) pass through resistance R23With field-effect tube M5Grid electrical connection, the second left half-bridge driven chip U6First output
End also with diode D7Cathode electrical connection, the diode D7Anode and the field-effect tube M5Grid electrical connection, institute
State field-effect tube M2Drain electrode be electrically connected with the power supply circuit 5.
The second left half-bridge driven chip U6Second output terminal (i.e. the second left half-bridge driven chip U in Figure 106LO
Interface end) pass through resistance R29With field-effect tube M7Grid electrical connection, the second left half-bridge driven chip U6Second output
End also with diode D11Cathode electrical connection, the diode D11Anode and the field-effect tube M7Grid electrical connection, institute
State field-effect tube M7Drain electrode and the field-effect tube M5Source electrode electrical connection, the field-effect tube M7Source electrode ground connection.
The second left half-bridge driven chip U6Third output end (i.e. the second left half-bridge driven chip U in Figure 106Vs
Interface end) respectively with the field-effect tube M5Source electrode, the field-effect tube M7Drain electrode electrical connection, the second left half-bridge drives
Dynamic chip U6Third output end also pass through inductance L3It is electrically connected with the temperature conditioning unit 18, is providing control just to temperature conditioning unit 18
Voltage.
Second left half-bridge driven chip U6VbInterface end passes through capacitor C7It is connected to the second left half-bridge driven chip U6's
Third output end, the second left half-bridge driven chip U6VbInterface end also passes through resistance R26It is connected to diode D9Cathode, institute
State diode D9Anode be connected to the second left half-bridge driven chip U6Power Vcc interface end；Second left half-bridge driven chip
U6Power Vcc interface end pass through resistance R27It is connected to working power 12V；Second left half-bridge driven chip U6Power Vcc connect
Mouth end also passes through capacitor C27It is connected to the second left half-bridge driven chip U6Com interface end, the second left half-bridge driven chip U6's
Com interface end ground connection.
The second right half-bridge driven sub-circuit includes the second right half-bridge driven chip U7, chip model can be
IR2011S；Second right half-bridge driven chip U7Input terminal be electrically connected with the governor circuit 1, specifically, the first right half-bridge
Driving chip U7Input terminal also include Hin input terminal and Lin input terminal, receive the governor circuit 1 exports first respectively
Control signal.
The second right half-bridge driven chip U7The first output end (i.e. the second right half-bridge driven chip U in Figure 107HO
Interface end) pass through resistance R24With field-effect tube M6Grid electrical connection, the second right half-bridge driven chip U7First output
End also with diode D8Cathode electrical connection, the diode D8Anode and the field-effect tube M6Grid electrical connection, institute
State field-effect tube M6Drain electrode be electrically connected with the power supply circuit 5.
The second right half-bridge driven chip U7Second output terminal (i.e. the second right half-bridge driven chip U in Figure 107LO
Interface end) pass through resistance R30With field-effect tube M8Grid electrical connection, the second right half-bridge driven chip U7Second output
End also with diode D12Cathode electrical connection, the diode D12Anode and the field-effect tube M8Grid electrical connection, institute
State field-effect tube M8Drain electrode and the field-effect tube M6Source electrode electrical connection, the field-effect tube M8Source electrode ground connection.
The second right half-bridge driven chip U7Third output end (i.e. the first right half-bridge driven chip U in Figure 103Vs
Interface end) respectively with the field-effect tube M6Source electrode, the field-effect tube M8Drain electrode electrical connection, the second right half-bridge drives
Dynamic chip U7Third output end also pass through inductance L2It is electrically connected with the temperature conditioning unit 4, provides control negative electricity to temperature conditioning unit 4
Pressure.
Second right half-bridge driven chip U7VbInterface end passes through capacitor C24It is connected to the second right half-bridge driven chip U7's
Third output end, the second right half-bridge driven chip U7VbInterface end also passes through resistance R25It is connected to diode D10Cathode, institute
State diode D10Anode be connected to the second right half-bridge driven chip U7Power Vcc interface end；Second right half-bridge driven chip
U7Power Vcc interface end pass through resistance R28It is connected to working power 12V；Second right half-bridge driven chip U7Power Vcc connect
Mouth end also passes through capacitor C28It is connected to the second right half-bridge driven chip U7Com interface end, the second right half-bridge driven chip U7's
Com interface end ground connection.
The second left half-bridge driven is from the field-effect tube M in circuit5Drain electrode also with the second right half-bridge driven from circuit
In field-effect tube M6Drain electrode electrical connection；Field-effect tube M5Drain electrode and field-effect tube M6Drain electrode also pass through capacitor C19It connects
Ground；Field-effect tube M5Drain electrode and field-effect tube M6Drain electrode also pass through capacitor C18Ground connection.
Inductance L3One end and the second left half-bridge driven chip U6Third output end electrical connection, inductance L3The other end with
The temperature conditioning unit 4 is electrically connected, inductance L3The other end also pass through capacitor C25Ground connection；Inductance L4One end and the second right half-bridge
Driving chip U7Third output end electrical connection, inductance L4The other end be electrically connected with the temperature conditioning unit 4, inductance L4It is another
End also passes through capacitor C26Ground connection；Inductance L3The other end pass through capacitor C20With inductance L4The other end electrical connection.
TEC driving circuit use full-bridge driving method, it can be achieved that TEC can work freeze and heat both of which under,
The first driving signal packet such as attached drawing 9, the first driving circuit 16 shown in Fig. 10 and the second driving circuit 17, in the present embodiment
Include HOT_TEC1, COOL_TEC1；Second driving signal includes HOT_TEC2, COOL_TEC2.HOT_TEC1,COOL_TEC1,
HOT_TEC2, COOL_TEC2 are the pwm signal of the controller MCU input in external piloting control circuit, HOT_TEC1 and HOT_
When TEC2 starts, COOL_TEC1 and COOL_TEC2 are closed, and TEC is in heating mode at this time；Otherwise HOT_TEC1 and HOT_
TEC2 is closed, and when COOL_TEC1 and COOL_TEC2 start, TEC is in refrigeration mode, this driving method realizes cooling and warming
Double mode can reach the temperature that range is 4 DEG C to 37 DEG C and control, and improves and reach the worth adjustment speed of preset temperature.
The present embodiment can be used in the temperature control of experiment, such as: in flow cytometer and various Protein Detection instrument
In use, the autosampler that often to arrange in pairs or groups.Autosampler is exactly a kind of intelligent, automation sample introduction instrument, is only needed
It sets sample introduction parameter (including instrument inner cell environment temperature), be put into sample to be tested, automatic sampling process can be completed.
It, need to be by automatic sample handling system in order to make the good combination of fluid section of automatic sample handling system and flow cytometer
Integral embedded type is installed to the side of cytoanalyze and in more closed region.If temperature control system generates
Heat it is unable to disperse in time, temperature control system can build up certain threshold value, make by prolonged work, temperature
Working environment constantly deteriorates, and the temperature control system of the present embodiment can reduce the heat given out as far as possible, improves refrigeration effect
Rate.
For the improvement of above-described embodiment, in embodiment provided by the invention, as shown in fig. 7, temperature conditioning unit 18 includes:
First temperature controlling device (TEC1) and the second temperature controlling device (TEC2), first temperature controlling device 51 and first driving circuit
16 electrical connections, second temperature controlling device 52 are electrically connected with second driving circuit 17.According to the ruler of controlled platform, that is, huyashi-chuuka (cold chinese-style noodles)
Very little, TEC control temperature range is 4 DEG C to 37 DEG C, and cytoanalyze and automatic sample handling system operating ambient temperature are usually 25
DEG C, it is contemplated that automatic sample handling system is in more closed environment, and internal temperature is likely to be breached 30 DEG C, i.e., heatsink temperature is
It 30 DEG C, in TEC type selecting, calculates and building temperature distribution model is as shown in Figure 6.
The temperature difference in TEC huyashi-chuuka (cold chinese-style noodles) and hot face is up to 30.85 DEG C, obtains Kano coefficient according to Fig. 7 Carnot cycle coefficient and is
1.2, so the refrigeration work consumption needed is 30.85*1.2=37W.
Select Ferrotec company contact surface for 39.7mm*39.7mm, the TEC of model 72005/127/060B, TEC's
Contact surface is bigger, and thermal resistance is smaller.
Therefore, the TEC power supply system of optimization works for TEC particularly important.This power-supply service is depressured using DC/DC,
Externally input power voltage step down to TEC is worked suitable voltage, 7 schematic diagram of power supply circuit in the present embodiment, such as Figure 11 institute
Show, uses LM25088 as control core, using the circuit structure of Figure 11, transformation efficiency can reach 98%, it means that only
Thermal energy of the only 2% power consumption conversion for the power supply system, the heat generated for closed installation environment, system itself
It is fewer, the heat that otherwise itself the generates at any time constantly accumulative heat dissipation that will lead to TEC more advantageous for the working environment of TEC
Bit end temperature is stepped up, and the temperature difference between the huyashi-chuuka (cold chinese-style noodles) of TEC and hot face will increase, and the refrigeration work consumption resulted in the need for increases therewith.
When selecting the voltage of power supply system output, for the TEC model of patent selection, test is compared, is tested
As a result as shown in Fig. 13, the relational graph of TEC supply voltage and refrigeration work consumption.By the data of comparison, in external input voltage
When for 24V, make TEC work to maximum refrigeration work consumption, i.e. cryogenic temperature is 4 DEG C, and supply voltage output at this time is 8.5V, is needed
Power P=external input voltage × external input electric current=24V*1.22A=29.28W, at this time MCU output duty
Than minimum 0.8335, i.e., when TEC power supply system output voltage is 8.5V in current system, the refrigerating efficiency highest of TEC.
For the improvement of above-described embodiment, in the present embodiment, as shown in figure 11, power supply circuit 19 includes that voltage converts core
Piece Up1, the voltage conversion chip Up1It is electrically connected with first driving circuit 16, the second driving circuit 17, is described first
Driving circuit 16, the electrical connection of the second driving circuit 17 provide the first power supply.
Voltage conversion chip Up1VINInput interface end passes through coil inductance L22, insurance device F1It is electrically connected with power supply
It connects；Voltage conversion chip Up1VINInput interface end also passes through capacitor C87Ground connection；Voltage conversion chip Up1VINInterface end is also
Pass through resistance Ruv1It is connected to voltage conversion chip Up1EN interface end；Voltage conversion chip Up1EN interface end pass through resistance
Ruv2Ground connection.
Voltage conversion chip Up1VINInput interface end also with field-effect tube Mp1Drain electrode electrical connection.The voltage turns
Change chip Up1The first field-effect tube interface end (i.e. voltage conversion chip Up1HGInterface end) it is connected to field-effect tube Mp1's
Grid, the voltage conversion chip Up1The second field-effect tube interface end (i.e. voltage conversion chip Up1SWInterface end) connection
To field-effect tube Mp1Source electrode.The voltage conversion chip Up1Current detecting end (i.e. voltage conversion chip Up1CSInterface
End) it is electrically connected with the anode of diode Dcs, the cathode of the diode Dcs passes through coil inductance Lout1Turn with the voltage
Change chip Up1Voltage output end electrical connection, the voltage conversion chip Up1Voltage output end and the first driving circuit 16 and
The electrical connection of second driving circuit 17 is that the first driving circuit 16 and the second driving circuit 17 are powered.
Voltage conversion chip Up1The second field-effect tube interface end also pass through resistance Rsns and be connected to voltage conversion chip
Up1CSG interface, voltage conversion chip Up1CSG interfacing ground；Voltage conversion chip Up1Voltage output end (i.e. voltage
Conversion chip Up1OUT interface end) also respectively pass through capacitor Cout1, capacitor Cout2Ground connection；Voltage conversion chip Up1Voltage
Output end also passes sequentially through resistance Rfbt1, resistance Rfbb1Ground connection；Voltage conversion chip Up1FBInterface end passes through resistance Rfbb1
Ground connection, Rfbb1The F of ground connectionBInterface end also passes through capacitor Chf1It is connected to voltage conversion chip Up1COMP interface end, voltage
Conversion chip Up1FBInterface end also passes sequentially through resistance Rcomp1, capacitor Ccomp1It is connected to voltage conversion chip Up1's
COMP interface end.
Voltage conversion chip Up1GND ground terminal ground connection；Voltage conversion chip Up1AGND interface end ground connection；Voltage turns
Change chip Up1SS interface end pass through capacitor Css1Ground connection；Voltage conversion chip Up1RTInterface end passes through resistance R11Ground connection；
Voltage conversion chip Up1The end RAMP pass through capacitor Cramp1Ground connection；Voltage conversion chip Up1VCCInterface end passes sequentially through electricity
Hinder Rramp1, capacitor Cramp1Ground connection, the VCC interface end of voltage conversion chip Up1 also pass through capacitor Cvcc1 and are grounded；Voltage turns
Change chip Up1DITH interface end pass through capacitor Cdthr1Ground connection.
Finally, it is necessary to explanations: above content is only used for helping to understand technical solution of the present invention, cannot understand
For limiting the scope of the invention；The non-intrinsically safe that those skilled in the art's above content according to the present invention is made changes
Into and adjustment, belong to protection scope of the presently claimed invention.
The above is only the basic embodiment of the invention that the applicant provides according to basic technical scheme, the skills of the industry
The creative improvement that do not have that art personnel are done referring to above-mentioned basic conception should belong to the scope that the present invention protects.
Claims (13)
1. a kind of temperature controlled sample of band incubates device, including orifice plate component, pallet component, semiconductor temperature-control component and heat dissipation
Component, it is characterised in that: the orifice plate component, pallet component are respectively a frame-type discoid body, and the orifice plate component is from upper
It is nested in pallet component under and；The semiconductor temperature-control component is set next to the bottom outside for the pallet for constituting pallet component
It sets；And incubating with temperature controlled sample for being integrally formed of radiating subassembly by being directly connected to semiconductor temperature-control component fills
It sets.
2. a kind of temperature controlled sample of band as described in claim 1 incubates device, it is characterised in that: the pallet component
It is made of pallet (3), incubation bottom plate (4), temperature sensor (6), spring clip (9)；The incubation bottom plate (4) passes through six supports
Disk joint bolt (13) is fixed on pallet (6) inner bottom surface, constitutes the contact disk for containing disc type orifice plate component；The incubation
Bottom plate (4) is equipped with temperature sensor (6) and semiconductor cooler (5)；And incubating bottom plate (4) and semiconductor cooler
(5) waterproof layer (14) are equipped between the contact surface between.
3. a kind of temperature controlled sample of band as described in claim 1 incubates device, it is characterised in that: the radiating subassembly
It being made of cooling fin (7) and fan (8), the cooling fin (7) is directly posted to be arranged in semiconductor cooler (5) lower part, and
The cooling mechanism that sample incubates device is formed by semiconductor cooler (5) and subsidiary fan (8).
4. a kind of temperature controlled sample of band as described in claim 1 incubates device, it is characterised in that: the orifice plate component
The frame-type water dish being made of for one cell orifice plate (1) and orifice-baffle support frame (2), wherein orifice-baffle support frame (2) inside bottom surface
It equipped with concave spherical surface, matches with the bottom spherical surface of cell orifice plate (1), liquid level is no more than the top surface of cell orifice plate (1)；More preferably
The effect that ensure that incubation.
5. a kind of temperature controlled sample of band as described in claim 1 incubates device, it is characterised in that: the semiconductor temperature
Control component is made of the semiconductor cooler (5) for being close to incubate bottom plate (4) lower part, left and right is set up separately；It includes: governor circuit, is used
In output first control signal, second control signal；
First driving circuit is electrically connected with the governor circuit, for receiving the first control signal of the governor circuit output,
And it is driven according to the first control signal；
Second driving circuit is electrically connected with the governor circuit, for receiving the second control signal of the governor circuit output,
And it is driven according to the second control signal；
Temperature conditioning unit is electrically connected with first driving circuit, the second driving circuit respectively, first driving circuit, second
The operating mode of temperature conditioning unit described in driving circuit drive control；
Power supply circuit is electrically connected with first driving circuit, the second driving circuit, for first driving circuit, the
Two drive circuitries.
6. a kind of temperature controlled sample of band as claimed in claim 5 incubates device, which is characterized in that the first driving electricity
Road includes the first left half-bridge driven sub-circuit and the first right half-bridge driven sub-circuit being electrically connected to each other:
The input terminal of the first left half-bridge driven sub-circuit is electrically connected with the output end of the governor circuit respectively, and described first
The output end of left half-bridge driven sub-circuit is electrically connected with the temperature conditioning unit, the power end of the first left half-bridge driven sub-circuit
It is electrically connected with the power supply circuit；
The input terminal of the first right half-bridge driven sub-circuit is electrically connected with the output end of the governor circuit respectively, and described first
The output end of right half-bridge driven sub-circuit is electrically connected with the temperature conditioning unit, the power end of the first right half-bridge driven sub-circuit
It is electrically connected with the power supply circuit.
7. a kind of temperature controlled sample of band as claimed in claim 5 incubates device, it is characterised in that: the second driving electricity
Road includes the second left half-bridge driven sub-circuit and the second right half-bridge driven sub-circuit being electrically connected to each other:
The input terminal of the second left half-bridge driven sub-circuit is electrically connected with the output end of the governor circuit respectively, and described second
The output end of left half-bridge driven sub-circuit is electrically connected with the temperature conditioning unit, the power end of the second left half-bridge driven sub-circuit
It is electrically connected with the power supply circuit；
The input terminal of the second right half-bridge driven sub-circuit is electrically connected with the output end of the governor circuit respectively, and described second
The output end of right half-bridge driven sub-circuit is electrically connected with the temperature conditioning unit, the power end of the second right half-bridge driven sub-circuit
It is electrically connected with the power supply circuit.
8. a kind of temperature controlled sample of band as claimed in claim 6 incubates device, it is characterised in that: the first left half-bridge
Drive sub-circuits include:
The input terminal of first left half-bridge driven chip, the first left half-bridge driven chip is electrically connected with the governor circuit, is used
In the first control signal for receiving the governor circuit output；
First output end of the first left half-bridge driven chip passes through resistance R8With field-effect tube M2Grid electrical connection, it is described
First output end of the first left half-bridge driven chip also with diode D1Cathode electrical connection, the diode D1Anode and institute
State field-effect tube M2Grid electrical connection, the field-effect tube M2Drain electrode be electrically connected with the power supply circuit；
The second output terminal of the first left half-bridge driven chip passes through resistance R14With field-effect tube M3Grid electrical connection, it is described
The second output terminal of first left half-bridge driven chip also with diode D5Cathode electrical connection, the diode D5Anode and institute
State field-effect tube M3Grid electrical connection, the field-effect tube M3Drain electrode and the field-effect tube M2Source electrode electrical connection, it is described
Field-effect tube M3Source electrode ground connection；
The third output end of the first left half-bridge driven chip respectively with the field-effect tube M2Source electrode, the field-effect tube
M3Drain electrode electrical connection, the third output end of the first left half-bridge driven chip also passes through inductance L1With the temperature conditioning unit electricity
Connection.
9. a kind of temperature controlled sample of band as claimed in claim 6 incubates device, it is characterised in that: the first right half-bridge
Drive sub-circuits include:
The input terminal of first right half-bridge driven chip, the first right half-bridge driven chip is electrically connected with the governor circuit, is used
In the first control signal for receiving the governor circuit output；
First output end of the first right half-bridge driven chip passes through resistance R9With field-effect tube M1Grid electrical connection, it is described
First output end of the first right half-bridge driven chip also with diode D2Cathode electrical connection, the diode D2Anode and institute
State field-effect tube M1Grid electrical connection, the field-effect tube M1Drain electrode be electrically connected with the power supply circuit；
The second output terminal of the first right half-bridge driven chip passes through resistance R15With field-effect tube M4Grid electrical connection, it is described
The second output terminal of first right half-bridge driven chip also with diode D6Cathode electrical connection, the diode D6Anode and institute
State field-effect tube M4Grid electrical connection, the field-effect tube M4Drain electrode and the field-effect tube M1Source electrode electrical connection, it is described
Field-effect tube M4Source electrode ground connection；
The third output end of the first right half-bridge driven chip respectively with the field-effect tube M1Source electrode, the field-effect tube
M4Drain electrode electrical connection, the third output end of the first right half-bridge driven chip also passes through inductance L2 and temperature conditioning unit electricity
Connection.
10. a kind of temperature controlled sample of band as claimed in claim 7 incubates device, it is characterised in that: described second left half
Bridge drive sub-circuits include:
The input terminal of second left half-bridge driven chip, the second left half-bridge driven chip is electrically connected with the governor circuit, is used
In the second control signal for receiving the governor circuit output；
First output end of the second left half-bridge driven chip passes through resistance R23With field-effect tube M5Grid electrical connection, it is described
First output end of the second left half-bridge driven chip also with diode D7Cathode electrical connection, the diode D7Anode and institute
State field-effect tube M5Grid electrical connection, the field-effect tube M5Drain electrode be electrically connected with the power supply circuit；
The second output terminal of the second left half-bridge driven chip passes through resistance R29With field-effect tube M7Grid electrical connection, it is described
The second output terminal of second left half-bridge driven chip also with diode D11Cathode electrical connection, the diode D11Anode with
The field-effect tube M7Grid electrical connection, the field-effect tube M7Drain electrode and the field-effect tube M5Source electrode electrical connection, institute
State field-effect tube M7Source electrode ground connection；
The third output end of the second left half-bridge driven chip respectively with the field-effect tube M5Source electrode, the field-effect tube
M7Drain electrode electrical connection, the third output end of the second left half-bridge driven chip also passes through inductance L3With the temperature conditioning unit electricity
Connection.
11. a kind of temperature controlled sample of band as claimed in claim 7 incubates device, it is characterised in that: the second negative drive
Mover circuit includes:
The input terminal of second right half-bridge driven chip, the second right half-bridge driven chip is electrically connected with the governor circuit, is used
In the second control signal for receiving the governor circuit output；
First output end of the second right half-bridge driven chip passes through resistance R24With field-effect tube M6Grid electrical connection, it is described
First output end of the second right half-bridge driven chip also with diode D8Cathode electrical connection, the diode D8Anode and institute
State field-effect tube M6Grid electrical connection, the field-effect tube M6Drain electrode be electrically connected with the power supply circuit；
The second output terminal of the second right half-bridge driven chip passes through resistance R30With field-effect tube M8Grid electrical connection, it is described
The second output terminal of second right half-bridge driven chip also with diode D12Cathode electrical connection, the diode D12Anode with
The field-effect tube M8Grid electrical connection, the field-effect tube M8Drain electrode and the field-effect tube M6Source electrode electrical connection, institute
State field-effect tube M8Source electrode ground connection；
The third output end of the second right half-bridge driven chip respectively with the field-effect tube M6Source electrode, the field-effect tube
M8Drain electrode electrical connection, the third output end of the second right half-bridge driven chip also passes through inductance L3With the temperature conditioning unit electricity
Connection.
12. the temperature controlled sample of a kind of band as described in any one of claim 5~11 incubates device, feature exists
In: the power supply circuit includes:
The input terminal of voltage conversion chip, the voltage conversion chip passes through coil inductance L22, insurance device F1With power supply
Electrical connection；The voltage conversion chip is also electrically connected with first driving circuit, the second driving circuit, for first driving
Circuit, the electrical connection of the second driving circuit provide the first power supply；
First field-effect tube interface end of the voltage conversion chip is connected to field-effect tube Mp1Grid, the voltage converts core
Second field-effect tube interface end of piece is connected to field-effect tube Mp1Source electrode, the field-effect tube Mp1Drain electrode and the voltage
The input terminal of conversion chip is electrically connected；
The current detecting end of the voltage conversion chip is electrically connected with the anode of diode Dcs, and the cathode of the diode Dcs is logical
Cross coil inductance Lout1It is electrically connected with the voltage output end of the voltage conversion chip, the voltage of the voltage conversion chip is defeated
Outlet is electrically connected with the first driving circuit and the second driving circuit.
13. the temperature controlled sample of a kind of band as described in any one of claim 5~11 incubates device, feature exists
In: the temperature conditioning unit includes the first temperature controlling device and the second temperature controlling device；First temperature controlling device and first driving
Circuit electrical connection, second temperature controlling device are electrically connected with second driving circuit.
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| CN109799328B (en) | 2024-04-26 |
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