CN207020552U - A kind of temperature control system of semiconductor laser - Google Patents
A kind of temperature control system of semiconductor laser Download PDFInfo
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- CN207020552U CN207020552U CN201720896370.7U CN201720896370U CN207020552U CN 207020552 U CN207020552 U CN 207020552U CN 201720896370 U CN201720896370 U CN 201720896370U CN 207020552 U CN207020552 U CN 207020552U
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Abstract
Semiconductor temperature-control field is the utility model is related to, discloses a kind of temperature control system of semiconductor laser.Including laser enclosure, temperature detect switch (TDS), Peltier potsherd, radiating fin and temperature control circuit, the Peltier potsherd is arranged on immediately below the bottom plate of laser enclosure in groove, Peltier potsherd bottom surface is installed by radiating fin, the temperature detect switch (TDS) is arranged on the forward recess of the bottom plate of laser enclosure, the temperature control circuit includes temperature detecting unit, main control unit and full-bridge driving chip, the temperature sensor detector of the temperature detecting unit is stretched on the inside of laser enclosure, the signal connection main control unit of temperature detecting unit, main control unit signal connects full-bridge driving chip, full-bridge driving chip signal connects temperature detect switch (TDS) and Peltier potsherd, temperature detect switch (TDS) is electrically connected by way of series connection with Peltier potsherd.The utility model realizes laser and is operated in the environment of reasonable temperature, adds the stability that laser wavelength, power and light beam point to.
Description
Technical field
It the utility model is related to conductor temperature control technology field, the temperature control system of particularly a kind of semiconductor laser
System.
Background technology
Current semiconductor laser is more and more used in high-precision analysis meter, such as flow cytometer.It
It is a kind of detecting instrument for carrying out quantitative analysis and sorting to unicellular or other biological particle on functional level, can be at a high speed
Thousands of individual cells are analyzed, and multiple parameters can be measured from a cell simultaneously.
It its first have to solve be unicellular illumination problem；Art typically is focused on using streaming in the field, i.e., by sheath
Liquid wraps up sample liquid, cell in sample is constrained to the unicellular stream of 10 μm or so of diameter, and regularly pass sequentially through one by one sharp
Optical illumination region, produce the pulse of different amplitudes and quantity.Cell scatters the pulse of light and fluorescence signal caused by laser
Intensity, wavelength, instantaneous energy density with excitation source（Or power）Have direct relation, to keep instrument uniformity,
Stability and reliability, it is necessary to ensure that wavelength, the uniformity of energy density when each cell is excited.
At present in semiconductor laser, due to pump laser diode（LD）With the heating of working media, running hours
Laser output luminous power can reduce, output center wavelength of light drift about, or even temperature it is too high and cause laser damage.
Further, since the diameter of the common flow cytometer detection object such as cell, bacterium only has 1 ~ 15 μm, in order to ensure not lose survey
Amount event, hot spot is excited to be generally designed to the size more than cell dia in flow cytometer, such as 10 μm × 60 μm
Oval size；But its Energy distribution Gaussian distributed relation, i.e. energy density gradually decay from spot center to edge, light
The drift of spot position will have an impact to the energy density of exciting light.
Therefore, there are 2 points of considerations in laser lighting optical design design：First, ensure laser wavelength, entire light
The stability of energy；Second, ensure the stability that laser points to.Therefore common scheme is stable, low square from high power
Root（RMS）The laser of noise, high light beam quality distribution and pointing stability, but the increase of cost can be brought.And these parameters
There is direct relation with laser. operating temperature, such as semiconductor laser is planted than more sensitive device, every degree Celsius of temperature
The change of degree would generally cause the change of about 0.1 nm output wavelengths；Laser output power with variation of ambient temperature, generally with
Increasing power output and declining for temperature.In addition, temperature changes caused device mechanical deformation, can swash semiconductor
Light device points to the translation that millimeter magnitude occurs.Fig. 1 is the focal beam spot horizontal direction central Energy distribution map of calculating simulation, can be with
See that compared with flat-top, peak power more than 95% energy all concentrates on 12 μm or so, and the cell of flow cytometer Instrument observation
Diameter is about at 6-12 μm.
By taking flow cytometer as an example, according to the product specification of flow cytometer, environmental suitability and stability requirement, it is necessary to
Optical system normal work under 15-35 oC environment temperatures, and the index of routine business laser pointing stability is by temperature
Degree influences, such as<5 μ rad/ oC, it is about 1.3 μm/oC to be converted to focal beam spot, i.e., per degree celsius temperature, change will cause
1.3 μm of facula position change, when variation of ambient temperature is more than 10 degrees Celsius of formulas cell will be caused can not to be excited by laser
Arrive.Thus conventional not temperature control scheme is that can not meet requirement, it is necessary to which laser module is carried out into the oC of temperature control 27 ± 2 to protect
Hot spot pointing stability is demonstrate,proved, now points to the largest of about 3 μm of off center.
If controlled light-source system therefore can be designed, strengthen the stability that the energy of laser and light beam point to, reduce
The influence for the environment temperatures such as high temperature is high and cold, it is ensured that instrument will cause the analyzers such as flow cytometer in all kinds of normal works etc.
The design of table is more reliable, is advantageous to improve its user's attraction and the market competitiveness.
Utility model content
Goal of the invention of the present utility model is：For above-mentioned problem, there is provided a kind of semiconductor laser
Temperature control system.
The technical solution adopted in the utility model is such：A kind of temperature control system of semiconductor laser, including laser
Device shell, temperature detect switch (TDS), Peltier potsherd, radiating fin and temperature control circuit, the Peltier potsherd are arranged on laser
Immediately below the bottom plate of shell in groove, radiating fin is installed in the Peltier potsherd bottom surface, and the temperature detect switch (TDS), which is arranged on, to swash
The forward recess of the bottom plate of light device shell, the temperature control circuit include temperature detecting unit, main control unit and full-bridge driving chip, temperature
Degree detection unit is arranged in the side wall of laser enclosure, and the temperature sensor detector of the temperature detecting unit stretches into laser
On the inside of device shell, the signal connection main control unit of the temperature detecting unit, the main control unit signal connection full-bridge driving core
Piece, the full-bridge driving chip signal connection temperature detect switch (TDS) and Peltier potsherd, the temperature detect switch (TDS) is by way of series connection
Electrically connected with Peltier potsherd.
Further, groove is arranged to and Peltier potsherd identical length and width immediately below the bottom plate of the laser enclosure
High size, and the length of radiating fin is wider than the length and width of Peltier potsherd, Peltier potsherd is by groove and radiating fin institute
It is fixed.
Further, the temperature detecting unit include temperature sensor, first resistor, second resistance, 3rd resistor and
Analogue-to-digital converters, the temperature sensor are made up of with first resistor, second resistance and 3rd resistor two-wire system connection
Wheatstone bridge, the output end of the analogue-to-digital converters connection Wheatstone bridge.
Further, on the inside of the temperature sensor detector insertion laser enclosure, heat conductive silica gel and laser are passed through
Shell is in close contact.
Further, the full-bridge driving chip is integrated using mos field effect transistor.
Further, the temperature detect switch (TDS) is connected in series using a wire with Peltier potsherd, the temperature control circuit
A wire is respectively adopted to be connected with temperature detect switch (TDS) and Peltier potsherd.
Further, the temperature detect switch (TDS) is fixed by temperature detect switch (TDS) pad, and the temperature detect switch (TDS) pad is pacified using screw
On the bottom plate of laser enclosure, the temperature detect switch (TDS) is stuck in the forward recess of the bottom plate of laser enclosure by temperature detect switch (TDS) pad
It is interior.
Further, the temperature control system of the semiconductor laser also includes fan unit, and the fan unit includes wind
Fan driving, air channel and fan, the housing of the air channel generally rectangular-shape, the air channel both ends are respectively entrance and exit,
The face height of the entrance is more than the end face of outlet, and the entrance has one or several breach, and the radiating fin passes through
The breach enters air channel, and the end of the entrance is by mounting hole, the installation settings fan, the fan and outlet position
In the both sides of radiating fin, the main control unit connects fans drive, and the fans drive connects fan.
Further, the temperature control circuit also includes laser opening unit, and the laser opening unit includes series connection
The first relay and the 3rd relay, first relay and the 3rd relay Schottky diode in parallel respectively, institute
The Peltier current supply circuit that the first relay is used to control temperature control system is stated, the 3rd relay is used for the confession for controlling laser
Electrical circuit.
Further, the temperature control circuit also includes power control unit, and the power control unit uses digital-to-analog
The power analog of the output end connecting laser of converter sets end, the input connection voltage of the digital-analog convertor
Fiducial chip and main control unit.
In summary, by adopting the above-described technical solution, the beneficial effects of the utility model are：Skill of the present utility model
The method that art scheme uses Peltier potsherd temperature control, and can be by the temperature control of Peltier potsherd and fan unit radiating phase
With reference to, realize that laser is operated in the working environment of reasonable temperature, and the stability of laser beam sensing is added,
Using the temperature control system of this programme when environment temperature 16-32 oC change the μ rad of two hour Hou Zhi Xiang of steady operation≤10；
Laser. operating temperature is controlled in 27 ± 2 DEG C, maintains the wavelength stability and power stability of laser.
Brief description of the drawings
Fig. 1 is the energy profile of the focal beam spot horizontal direction of calculating simulation in conventional method.
Fig. 2 is the external structure schematic diagram of the temperature control system of the utility model semiconductor laser.
Fig. 3 is the structural representation of the utility model temperature control circuit.
Fig. 4 is the electric connection structure schematic diagram of Peltier potsherd, temperature detect switch (TDS) and temperature control circuit in the utility model.
Fig. 5 is the electrical block diagram of the utility model temperature detecting unit.
Fig. 6 is the structural representation of the utility model fan system.
Fig. 7 is that the utility model is used to control the laser of the current supply circuit of Peltier current supply circuit and laser to open list
First electrical block diagram.
Embodiment
Below in conjunction with the accompanying drawings, the utility model is described in detail.
In order that the purpose of this utility model, technical scheme and advantage are more clearly understood, below in conjunction with accompanying drawing and implementation
Example, the utility model is further elaborated.It should be appreciated that specific embodiment described herein is only explaining
The utility model, it is not used to limit the utility model.
As shown in Fig. 2-Fig. 3, a kind of temperature control system of semiconductor laser, including laser enclosure 1, temperature detect switch (TDS) 5, pa
Your patch potsherd 2, radiating fin 3 and temperature control circuit, under the Peltier potsherd 2 is arranged on the bottom plate of laser enclosure 1 just
In square groove, radiating fin 3 is installed in the lower section of Peltier potsherd 2 by screw 6, and the temperature detect switch (TDS) 5 is arranged on laser
The forward recess of the bottom plate of device shell 1, the temperature control circuit include temperature detecting unit 8, main control unit and full-bridge driving chip, temperature
Degree detection unit 8 is arranged in the side wall of laser enclosure, and the temperature sensor detector of the temperature detecting unit 8 stretches into sharp
On the inside of light device shell, the signal connection main control unit of the temperature detecting unit 8, the main control unit signal connection full-bridge driving
Chip, the full-bridge driving chip signal connection temperature detect switch (TDS) and Peltier potsherd, the side that the temperature detect switch (TDS) passes through series connection
Formula electrically connects with Peltier potsherd.Temperature detect switch (TDS) 5 is used as thermal protector, and laser temperature can be protected too high and damaged, choosing
With 80 degree of normally closed temperature detect switch (TDS)s.When temperature detecting unit mouth 8 detects that operating temperature is less than 80 degree, temperature detect switch (TDS) closes, Peltier
Potsherd energy normal work；When its operating temperature is more than 80 degree, temperature detect switch (TDS) is opened, and Peltier potsherd is cut off, is used for
The situation for avoiding the abnormal heating of Peltier potsherd 2 from causing laser to be damaged, it is illustrated in figure 4 temperature detect switch (TDS) 5, Peltier ceramics
The attachment structure schematic diagram of piece 2 and temperature control circuit, the temperature detect switch (TDS) 5 use a wire and the company of series connection of Peltier potsherd 2
Connect, the temperature control circuit is respectively adopted a wire and is connected with temperature detect switch (TDS) 5 and Peltier potsherd 2.Peltier potsherd 2 is just
Often during work, temperature control circuit driving Peltier potsherd 2, Peltier potsherd 2 is the thermoelectric made according to Peltier effect
Refrigeration（Or heating）Component, the lightweight of Peltier potsherd 2 is small and has relatively high refrigerating capacity, suitable for fluidic cell
The refrigeration of the confined space in the precision instruments such as instrument.Cooling power can adjust by the current strength for changing Peltier potsherd；Separately
During outer change component operation current polarity, it can be switched to heating mode from refrigeration mode again, so as to adapt to 15-35 oC
Between different environment temperature in the case of overheat or supercooling.Acted on by the thermal conditioning of Peltier potsherd, realize laser work
Make the control of temperature.
Preferably, as shown in figure 5, the temperature detecting unit includes temperature sensor T, first resistor R1, second resistance
R2,3rd resistor R3 and analogue-to-digital converters, the temperature sensor and first resistor R1, second resistance R2 and the 3rd electricity
Hinder R3 and Wheatstone bridge, the first resistor R1, second resistance R2, temperature sensor T and the 3rd are formed by two-wire system connection
Resistance R3 is in turn connected to form loop, the node connecting laser feeder ear between the first resistor R1 and second resistance R2,
Node ground connection between the temperature sensor T and 3rd resistor R3, has between the first resistor R1 and 3rd resistor R3
There is output node T2+, the resistance of the Wheatstone bridge between output node T2-, second resistance R2 and temperature sensor T
Precision elect 1% as, analogue-to-digital converters, such as AD7795, connect the output node T2- and T2+ of Wheatstone bridge,
Wheatstone bridge is exported and carries out Differential Detection, data signal is converted into the precision of 16, there is provided the real time temperature of temperature control, should
The temperature measurement accuracy of unit is 0.1 DEG C.Meanwhile analog-digital converter AD7795 can also be to the operating current of multiple lasers, defeated in real time
Go out power to be monitored.On the inside of the detector insertion laser enclosure of the temperature sensor T, pass through heat conductive silica gel and laser
Shell is in close contact, and ensures temperature survey reliability.
Preferably, the full-bridge driving chip is integrated using mos field effect transistor, is used for
According to Peltier potsherd to the changeable demand that heats, freezes, to drive Peltier potsherd.With full-bridge driving chip
Exemplified by LMD18200, two of which input is the polarity of driving current（DIR INPUT）With control signal pulsewidth（PWM
INPUT）It can be adjusted according to actual environment, realize the refrigeration of opposed polarity and impulse modulation width（Or heating）Driving, from
And realize the refrigeration of different capacity（Or heating）Demand, and most laser temperature is stable to suitable section at last.
Preferably, as shown in Fig. 2 the temperature detect switch (TDS) 5 is fixed by temperature detect switch (TDS) pad 4, the temperature detect switch (TDS) pad 4
It is arranged on using screw 7 on the bottom plate of laser enclosure 1, the temperature detect switch (TDS) 5 is stuck in laser enclosure by temperature detect switch (TDS) pad
Bottom plate forward recess in.
Preferably, the temperature control of Peltier potsherd is combined by the present embodiment with the mode of fan cooling, and the semiconductor swashs
The temperature control system of light device also includes fan unit, and the fan unit includes air channel and fan, as shown in fig. 6, the air channel is
The housing of rectangular-shape, the air channel both ends are respectively entrance and exit 92, and the face height of the entrance is more than outlet 92
End face, the entrance have two breach 91, and the radiating fin 3 enters air channel, the end of the entrance through the breach 91
Portion is provided with the fan by mounting hole 94, and the fan and outlet are positioned at the both sides of radiating fin, and fan is by radiating fin 3
The heat distributed blows to 92 directions of outlet, takes away the heat of radiating fin 3.There is mounting hole 93, for by wind in the side wall of air channel
Fan unit is relatively fixed with laser enclosure 1.The main control unit connects fans drive, and the fans drive connects fan, wind
Fan driving is used for the opening and closing time for controlling fan, and controls rotation speed of the fan by driving current and then control heat dissipation capacity.
Preferably, the temperature control circuit also includes laser opening unit, as shown in fig. 7, the laser opening unit
The first relay G1 and the 3rd relay G3 including series connection, the first relay G1 and the 3rd relay G3 are in parallel respectively
Schottky diode, the first relay G1 output loop connection Peltier current supply circuit, the first relay G1 are used to control
The Peltier current supply circuit of temperature control system processed, the current supply circuit of the output loop connecting laser of the 3rd relay G3, institute
State the current supply circuit that the 3rd relay G3 is used to control laser.Data signal is completed to simulation using NPN type triode Q first
The conversion of switch, then, when the first relay G1 adhesives, Peltier current supply circuit is connected, and then promotes the 3rd of its series connection the
Relay G3 adhesives, the current supply circuit of laser is connected, open laser.NPN type triode Q collector and emitter point
The pin 6 of the relay G3 input circuits of pin 2 and the 3rd of the first relay G1 input circuits, first relay are not connected
G1 input circuits another pin 1 connection Peltier current supply circuit power end, the 3rd relay G3 inputs it is another
One pin 5 connects the pin 4 of the first relay G1 output loops, and the pin 4 and 3 of the first relay G1 output loops connects
Controlled Peltier current supply circuit is connect, the pin 7 and 8 of the 3rd relay G3 output loops connects controlled laser
Current supply circuit.Wherein in order to protect laser, if Peltier current supply circuit failure, the 3rd relay G3 can not be closed, swash
The current supply circuit of light device will not work, and be not carried out powering；It may also be configured to after electric 10s after power-supply system is stable, the 3rd
Relay G3 closes the current supply circuit that can just open laser.
Preferably, the temperature control circuit also includes power control unit, as shown in figure 3, the power control unit uses
The power analog of the output end connecting laser of digital analog converter sets end, such as digital-analog convertor AD5623, defeated
Go out end and be used to setting the analog quantity of laser power, the input connection voltage reference chip of the digital-analog convertor and
Main control unit, such as voltage reference chip ADR444, reference voltage is provided to digital analog converter AD5623.It is simultaneously right
The digital analog converter of wide range, to ensure that the scope of last analog quantity without departing from the setting input range of laser, can make
With ∏ types attenuation network decay simulation output.In the program, gain G=2.6V/Vref；Wherein 2.6V is setting range limit,
Vref is digital-to-analog converter reference amount.
The workflow of the temperature control system of the application semiconductor laser is：（1）First opened by the Digital Logic of main control unit
Dynamic laser opening unit, the performance loop of Peltier potsherd 2 is opened, and then laser is started working；（2）Temperature detection list
Member 8 monitors real time temperature in real time；（3）Real time temperature is judged with setting the difference of operating temperature, if on the occasion of explanation real time temperature
Too high, Peltier potsherd is arranged at refrigeration mode by temperature control circuit, and sets refrigerating capacity by impulse modulation width, if temperature after
Continuous increase then opens fan unit increase heat dissipation capacity；If difference is negative value, illustrate that real time temperature is too low, full-bridge driving chip is by pa
Your patch potsherd is arranged at heating mode, and sets heating capacity by impulse modulation width；（4）Patrolled by proportional integral differential control
Volume full-bridge driving chip is adjusted, and most at last temperature stabilization in setting range；（5）Monitoring feedback temperature control state, if control
Temperature failure such as failure or time-out, the current supply circuit of laser opening unit laser is not worked, and laser is closed, realization
Protection；（6）The operating power of laser is set according to user's request by power control unit.
Preferred embodiment of the present utility model is the foregoing is only, it is all at this not to limit the utility model
All any modification, equivalent and improvement made within the spirit and principle of utility model etc., should be included in the utility model
Protection domain within.
Claims (10)
- A kind of 1. temperature control system of semiconductor laser, it is characterised in that：Including laser enclosure, temperature detect switch (TDS), Peltier pottery Ceramics, radiating fin and temperature control circuit, the Peltier potsherd are arranged on immediately below the bottom plate of laser enclosure in groove, institute Peltier potsherd bottom surface installation radiating fin is stated, the temperature detect switch (TDS) is arranged on the forward recess of the bottom plate of laser enclosure, institute Temperature control circuit is stated to be arranged on outside laser including temperature detecting unit, main control unit and full-bridge driving chip, temperature detecting unit In the side wall of shell, the temperature sensor detector of the temperature detecting unit is stretched on the inside of laser enclosure, the temperature detection The signal connection main control unit of unit, the main control unit signal connect full-bridge driving chip, the full-bridge driving chip signal Connection temperature detect switch (TDS) and Peltier potsherd, the temperature detect switch (TDS) are electrically connected by way of series connection with Peltier potsherd.
- 2. the temperature control system of semiconductor laser as claimed in claim 1, it is characterised in that：The bottom plate of the laser enclosure Underface groove be arranged to Peltier potsherd identical length, width and height size, and the length of radiating fin be wider than Peltier ceramics The length and width of piece, Peltier potsherd are fixed by groove and radiating fin.
- 3. the temperature control system of semiconductor laser as claimed in claim 1, it is characterised in that：The temperature detecting unit includes Temperature sensor, first resistor, second resistance, 3rd resistor and analogue-to-digital converters, the temperature sensor and the first electricity Resistance, second resistance and 3rd resistor form Wheatstone bridge by two-wire system connection, the analogue-to-digital converters connection favour this The output end of energization bridge.
- 4. the temperature control system of semiconductor laser as claimed in claim 3, it is characterised in that：The temperature sensor detector Insert on the inside of laser enclosure, be in close contact by heat conductive silica gel and laser enclosure.
- 5. the temperature control system of semiconductor laser as claimed in claim 1, it is characterised in that：The full-bridge driving chip is to adopt Integrated with mos field effect transistor.
- 6. the temperature control system of semiconductor laser as claimed in claim 1, it is characterised in that：The temperature detect switch (TDS) uses one Wire is connected in series with Peltier potsherd, and a wire and temperature detect switch (TDS) and Peltier ceramics is respectively adopted in the temperature control circuit Piece connects.
- 7. the temperature control system of semiconductor laser as claimed in claim 6, it is characterised in that：The temperature detect switch (TDS) passes through temperature control Switch spacer is fixed, and the temperature detect switch (TDS) pad is arranged on using screw on the bottom plate of laser enclosure, the temperature detect switch (TDS) quilt Temperature detect switch (TDS) pad is stuck in the forward recess of the bottom plate of laser enclosure.
- 8. the temperature control system of the semiconductor laser as described in claim 1-7 one of which, it is characterised in that：The semiconductor The temperature control system of laser also includes fan unit, and the fan unit includes fans drive, air channel and fan, and the air channel is whole Body is the housing of rectangular-shape, and the air channel both ends are respectively entrance and exit, and the face height of the entrance is more than outlet End face, the entrance have one or several breach, and the radiating fin enters air channel, the end of the entrance through the breach Portion is by mounting hole, and the installation settings fan, the fan and outlet be positioned at the both sides of radiating fin, the main control unit Fans drive is connected, the fans drive connects fan.
- 9. the temperature control system of semiconductor laser as claimed in claim 1, it is characterised in that：The temperature control circuit also includes swashing Light device opening unit, the laser opening unit include the first relay and the 3rd relay of series connection, first relay Device and the 3rd relay distinguish parallel connection Schottky diode, and first relay is used to control the Peltier of temperature control system to supply Electrical circuit, the 3rd relay are used for the current supply circuit for controlling laser.
- 10. the temperature control system of semiconductor laser as claimed in claim 1, it is characterised in that：The temperature control circuit also includes Power control unit, the power control unit use the power analog of the output end connecting laser of digital-analog convertor End, the input connection voltage reference chip and main control unit of the digital-analog convertor are set.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720896370.7U CN207020552U (en) | 2017-07-24 | 2017-07-24 | A kind of temperature control system of semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720896370.7U CN207020552U (en) | 2017-07-24 | 2017-07-24 | A kind of temperature control system of semiconductor laser |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109616859A (en) * | 2019-01-29 | 2019-04-12 | 中山铟尼镭斯科技有限公司 | A kind of optical fiber femtosecond laser |
| CN111106507A (en) * | 2019-11-25 | 2020-05-05 | 苏州英谷激光有限公司 | Laser directivity adjusting assembly, laser and laser light directivity adjusting method |
| CN111628483A (en) * | 2020-05-09 | 2020-09-04 | 上海思路迪医学检验所有限公司 | H-bridge driving circuit with over-temperature protection function and electrical system |
| CN112466981A (en) * | 2020-10-30 | 2021-03-09 | 武汉大学 | Refrigeration trap attenuator for high-power pulse laser energy attenuation |
-
2017
- 2017-07-24 CN CN201720896370.7U patent/CN207020552U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109616859A (en) * | 2019-01-29 | 2019-04-12 | 中山铟尼镭斯科技有限公司 | A kind of optical fiber femtosecond laser |
| CN111106507A (en) * | 2019-11-25 | 2020-05-05 | 苏州英谷激光有限公司 | Laser directivity adjusting assembly, laser and laser light directivity adjusting method |
| CN111628483A (en) * | 2020-05-09 | 2020-09-04 | 上海思路迪医学检验所有限公司 | H-bridge driving circuit with over-temperature protection function and electrical system |
| CN112466981A (en) * | 2020-10-30 | 2021-03-09 | 武汉大学 | Refrigeration trap attenuator for high-power pulse laser energy attenuation |
| CN112466981B (en) * | 2020-10-30 | 2022-03-11 | 武汉大学 | Refrigeration trap attenuator for high-power pulse laser energy attenuation |
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