CN209974963U - 一种可调节的升降装置 - Google Patents
一种可调节的升降装置 Download PDFInfo
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- CN209974963U CN209974963U CN201920389523.8U CN201920389523U CN209974963U CN 209974963 U CN209974963 U CN 209974963U CN 201920389523 U CN201920389523 U CN 201920389523U CN 209974963 U CN209974963 U CN 209974963U
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- 230000007246 mechanism Effects 0.000 claims abstract description 56
- 230000003028 elevating effect Effects 0.000 claims abstract description 10
- 230000033001 locomotion Effects 0.000 claims description 15
- 230000000670 limiting effect Effects 0.000 claims description 12
- 230000003014 reinforcing effect Effects 0.000 claims description 4
- 230000002633 protecting effect Effects 0.000 claims description 2
- 238000005728 strengthening Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000006872 improvement Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Effective date of registration: 20231108 Address after: Room 103, Building 1, No. 500 Shunda Road, Yuhang Economic and Technological Development Zone, Linping District, Hangzhou City, Zhejiang Province, 311103 Patentee after: Zhejiang Qiushi Chuangxin Semiconductor Equipment Co.,Ltd. Patentee after: ZHEJIANG JINGSHENG M&E Co.,Ltd. Address before: 311100 Zhejiang Province Hangzhou Yuhang District East Lake Street Qianjiang Economic Development Zone, No. 96 Longchuanwu Road, Building 2, 3 Floors Patentee before: ZHEJIANG QIUSHI SEMICONDUCTOR EQUIPMENT Co.,Ltd. Patentee before: ZHEJIANG JINGSHENG M&E Co.,Ltd. |