CN209913788U

CN209913788U - Unmanned aerial vehicle radio frequency interference power amplifier circuit

Info

Publication number: CN209913788U
Application number: CN201920200069.7U
Authority: CN
Inventors: 张�浩; 谈世哲; 邱卓
Original assignee: Qingdao National Number Mdt Infotech Ltd
Current assignee: Qingdao National Number Mdt Infotech Ltd
Priority date: 2019-02-15
Filing date: 2019-02-15
Publication date: 2020-01-07
Anticipated expiration: 2029-02-15

Abstract

The utility model provides an unmanned aerial vehicle radio frequency interference power amplifier circuit, including the voltage controlled oscillator, one-level power amplifier circuit, second grade power amplifier circuit, tertiary power amplifier circuit and the radio frequency isolator that connect gradually, voltage controlled oscillator is used for producing the little signal source of radio frequency, one-level power amplifier circuit second grade power amplifier circuit with all include power amplifier in the tertiary power amplifier circuit, one-level power amplifier circuit power amplifier adopts general amplifier and output gain to be 12dB, second grade power amplifier circuit power amplifier adopts N channel enhancement mode LDMOSFET and single tube output gain 18dB, tertiary power amplifier circuit power amplifier adopts LDMOS transistor and single tube output gain 18 dB. The utility model provides an output in the current radio frequency power amplifier design is low, and the gain is low, effectively disturbs the problem that transmission distance is close.

Description

Unmanned aerial vehicle radio frequency interference power amplifier circuit

Technical Field

The utility model belongs to the technical field of the unmanned aerial vehicle power amplifier, concretely relates to unmanned aerial vehicle radio frequency interference power amplifier circuit.

Background

In the existing design of an interference radio frequency power amplifier of an unmanned aerial vehicle, the defects of low output power, low gain, short effective interference transmission distance and the like exist.

SUMMERY OF THE UTILITY MODEL

The utility model aims at providing an unmanned aerial vehicle radio frequency interference power amplifier circuit, the output of solving in the current radio frequency power amplifier design is low, and the gain is low, effectively disturbs the problem that transmission distance is close.

The utility model provides a following technical scheme:

the utility model provides an unmanned aerial vehicle radio frequency interference power amplifier circuit, is including the voltage controlled oscillator, one-level power amplifier circuit, second grade power amplifier circuit, tertiary power amplifier circuit and the radio frequency isolator that connect gradually, voltage controlled oscillator is used for producing the little signal source of radio frequency, one-level power amplifier circuit second grade power amplifier circuit with all include power amplifier in the tertiary power amplifier circuit, one-level power amplifier circuit power amplifier adopts general amplifier and output gain to be 12dB, second grade power amplifier circuit power amplifier adopts N channel enhancement mode LDMOSFET and single tube output gain 18dB, tertiary power amplifier circuit power amplifier adopts LDMOS transistor and single tube output gain 18 dB.

Preferably, the voltage-controlled oscillator adopts an FVCO2400 chip, the FVCO2400 chip is connected with a 5V power supply to supply power, an adjusting resistor is connected between a VT end of the FVCO2400 chip and the power supply, a VT tuning end voltage is 0.2-4.5V, a filtering capacitor is arranged between a power supply end of the FVCO2400 chip and the power supply, and an RF out end of the FVCO2400 chip is connected with the primary power amplifier circuit.

Preferably, the general-purpose amplifier adopts the SBB5089Z amplifier, the input of SBB5089Z amplifier is connected the voltage controlled oscillator, the output of SBB5089Z amplifier is connected the second grade power amplifier circuit, the SBB5089Z amplifier is connected with 5V mains operated, SBB5089Z amplifier with be equipped with filter circuit between the power.

Preferably, the N-channel enhancement type LDMOSFET employs MW6S004NT1, the gate of MW6S004NT1 is connected with a 5V power supply, the drain of MW6S004NT1 is connected with a 28V power supply, an adjusting resistor is arranged between the gate of MW6S004NT1 and the 5V power supply and adjusts the gate bias voltage to 2.7V, the gate of MW6S004NT1 is connected with the primary power amplifier circuit, and the drain of MW6S004NT1 is connected with the tertiary power amplifier circuit.

Preferably, a filter circuit is arranged between the gate of the MW6S004NT1 and the 5V power supply, and between the drain of the MW6S004NT1 and the 28V power supply.

Preferably, the LDMOS transistor is BLF6G27-45, the gate of BLF6G27-45 is connected with a 5V power supply, the drain of BLF6G27-45 is connected with a 28V power supply, an adjusting resistor is arranged between the gate of BLF6G27-45 and the 5V power supply and adjusts the bias voltage of the gate to 1.9V, the gate of BLF6G27-45 is connected with the secondary power amplifier circuit, and the drain of BLF6G27-45 is connected with the radio frequency isolator.

Preferably, a filter circuit is arranged between the gate of the BLF6G27-45 and the 5V power supply and between the drain of the BLF6G27-45 and the 28V power supply.

Preferably, the radio frequency isolator adopts a WG2020X-1 isolator, and the output of the isolator is connected to an antenna SMA joint.

The utility model has the advantages that: the design ensures that the output power of the radio frequency power amplifier reaches up to 44dBm and the gain reaches 45Db through the design of the three-stage power amplifier circuit, and the effective transmission distance can reach 6Km, thereby effectively solving the problems of low output power, low gain and short effective interference transmission distance in the existing radio frequency power amplifier design.

Drawings

The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention. In the drawings:

FIG. 1 is a schematic view of the principle structure of the present invention;

fig. 2 is a schematic diagram of the circuit structure of the voltage controlled oscillator of the present invention;

FIG. 3 is a schematic diagram of the first-level power amplifier circuit of the present invention;

FIG. 4 is a schematic diagram of the structure of the second-stage power amplifier circuit of the present invention;

fig. 5 is a schematic diagram of the structure of the three-stage power amplifier circuit of the present invention.

Detailed Description

As shown in fig. 1-5, an unmanned aerial vehicle radio frequency interference power amplifier circuit comprises a voltage-controlled oscillator, a first-stage power amplifier circuit, a second-stage power amplifier circuit, a third-stage power amplifier circuit and a radio frequency isolator which are connected in sequence, wherein the voltage-controlled oscillator is used for generating a radio frequency small signal source, the first-stage power amplifier circuit, the second-stage power amplifier circuit and the third-stage power amplifier circuit respectively comprise a power amplifier, the first-stage power amplifier circuit adopts a general amplifier and has an output gain of 12dB, the second-stage power amplifier circuit adopts an N-channel enhanced LDMOSFET and a single tube output gain of 18dB, and the third-stage power amplifier circuit adopts an LDMOS transistor and.

Specifically, the power amplifier circuit utilizes a voltage-controlled oscillator to generate a radio frequency small signal source (output power is 5dBm), the radio frequency small signal source passes through a three-stage power amplifier circuit, the output power reaches 45dBm, and the gain is 48 dB. In the three-stage power amplifier circuit, the third-stage power amplifier adopts an LDMOS transistor BLF6G27-45 with high cost performance, the output gain of the single transistor is 18dB, and the maximum output power is 45 dBm. The front-stage power amplifier is determined according to the output of the final-stage amplifier of 45dBm, so that the minimum output power of the second-stage power amplifier is 26dBm, the second-stage power amplifier circuit adopts MW6S004N, the single-tube output gain is 18dB, and the maximum output power is 36 dBm. After the second stage amplifier and the final stage amplifier are determined, the latter two stages of amplifiers provide 36dB of gain, an amplifier with the gain of 12dB and the output power of 8dBm is selected as the first stage, and as the input and the output of the first stage amplifier are radio frequency small signals, the first stage selects the general amplifier SBB5089Z as the first stage, the working frequency band of the first stage is as high as 4G, the cost performance is high, and the design requirements are met. The radio frequency isolator adopts a WG2020X-1 isolator to unidirectionally isolate radio frequency signals and prevent the signals from being reversely input.

As shown in fig. 2, the voltage-controlled oscillator employs FVCO2400 chips: the frequency of the small radio frequency signal with the output frequency of 2300 plus 2500MHZ, the output power of 5dBm, the power supply VCC supplied with power, the working current of 10mA, the VT tuning end voltage of 0.2-4.5V, the tuning end used for adjusting the central frequency point of the signal to 2400MHZ, the capacitor C11 power supply bypass capacitor for filtering noise waves of the power supply, and the resistors R22 and R23 used for adjusting the VT end voltage of the voltage-controlled oscillator.

As shown in fig. 3, the input and output signals of the first-stage power amplifier are all radio frequency small signals, so that a general amplifier SBB5089Z with high cost performance is selected as the first stage, P1dB point is 20.4dBm, absolute stability is achieved within 0-4 GHz in a frequency band, input and output are matched to 50 ohms inside, a good port standing wave can be obtained without an external matching circuit, the working voltage is +5V, and the working current is 75mA, wherein C4 and C5 are bypass capacitors of a power supply, noise waves are filtered for the power supply, an L2 inductor is used for power supply filtering, capacitors C15 and C16 are selected at the working frequency of the amplifier, and the ESR (equivalent series resistance) of the circuit is minimum.

As shown in fig. 4, the secondary power amplifier circuit: MW6S004NT1 is an N-channel enhancement LDMOSFET which can work in A class or AB class, the working frequency is within 2GHz, the performance is excellent, the single tube gain is 18dB, the maximum output power is 36dBm (4W), the output third-order intermodulation coefficient is-34 dBc, the LDMOSFET can work normally under the voltage standing wave ratio VSWR of 5:1, the MW6S004NT1 adopts double power supplies, the grid supplies power for 5V, the drain supplies power for 28V, the C23, the C24, the C27 and the C28 are power supply filter capacitors and are used for filtering power clutter. The resistors R14 and R20 adjust the grid bias voltage of the MOS tube to be 2.7V, IDS is 50mA, and the capacitors C6 and C12 are selected according to the principle that ESR (equivalent series resistance) of the circuit is the minimum at the working frequency of the amplifier.

As shown in fig. 5, the three-stage power amplifier circuit: the BLF6G27-45 is a high-power LDMOS transistor and has the characteristics of high output power and large gain. The working frequency is 2500MHZ-2700MHZ, the single tube gain is 18dB, the output power is 45W, the dual power supplies are used for supplying power, the grid supplies power for 5V, and the drain supplies power for 28V. The capacitors C34, C35, C30 and C40 are bypass capacitors and are used for power supply filtering. The resistors R33 and R36 are used for adjusting the grid bias voltage to be 1.9V, the IDs is 60mA, and the capacitors C37 and C8 are selected according to the principle that the ESR (equivalent series resistance) of the circuit is the minimum at the working frequency of the amplifier.

Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing embodiments, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. The utility model provides an unmanned aerial vehicle radio frequency interference power amplifier circuit, its characterized in that, including voltage controlled oscillator, one-level power amplifier circuit, second grade power amplifier circuit, tertiary power amplifier circuit and the radio frequency isolator that connects gradually, voltage controlled oscillator is used for producing the little signal source of radio frequency, one-level power amplifier circuit second grade power amplifier circuit with all include power amplifier in the tertiary power amplifier circuit, one-level power amplifier circuit power amplifier adopts general amplifier and output gain to be 12dB, second grade power amplifier circuit power amplifier adopts N channel enhancement mode LDMOSFET and single tube output gain 18dB, tertiary power amplifier circuit power amplifier adopts LDMOS transistor and single tube output gain 18 dB.

2. The UAV RF interference power amplifier circuit of claim 1, wherein the VCO is a FVCO2400 chip, the FVCO2400 chip is connected with a 5V power supply, a tuning resistor is connected between a VT end of the FVCO2400 chip and the power supply, a VT tuning terminal voltage is 0.2-4.5V, a filter capacitor is arranged between a power supply end of the FVCO2400 chip and the power supply, and an RF out end of the FVCO2400 chip is connected with the primary power amplifier circuit.

3. The unmanned aerial vehicle radio frequency interference power amplifier circuit of claim 1, characterized in that, general amplifier adopts SBB5089Z amplifier, the voltage controlled oscillator is connected to the input of SBB5089Z amplifier, the output of SBB5089Z amplifier is connected the second grade power amplifier circuit, SBB5089Z amplifier is connected with 5V mains operated, SBB5089Z amplifier with be equipped with filter circuit between the power.

4. The unmanned aerial vehicle radio frequency interference power amplifier circuit of claim 1, wherein the N-channel enhancement type LDMOSFET employs MW6S004NT1, the MW6S004NT1 gate is connected with a 5V power supply, the MW6S004NT1 drain is connected with a 28V power supply, an adjusting resistor is provided between the MW6S004NT1 gate and the 5V power supply and the gate bias voltage is adjusted to 2.7V, the MW6S004NT1 gate is connected with the primary power amplifier circuit, and the MW6S004NT1 drain is connected with the tertiary power amplifier circuit.

5. The UAV RF interference power amplifier circuit of claim 4, wherein a filter circuit is disposed between the gate of MW6S004NT1 and the 5V power supply, and between the drain of MW6S004NT1 and the 28V power supply.

6. The unmanned aerial vehicle radio frequency interference power amplifier circuit of claim 1, wherein the LDMOS transistor is BLF6G27-45, the gate of BLF6G27-45 is connected with a 5V power supply, the drain of BLF6G27-45 is connected with a 28V power supply, an adjusting resistor is arranged between the gate of BLF6G27-45 and the 5V power supply and the bias voltage of the adjusting gate is 1.9V, the gate of BLF6G27-45 is connected with the secondary power amplifier circuit, and the drain of BLF6G27-45 is connected with the radio frequency isolator.

7. The UAV RF interference power amplifier circuit of claim 6, wherein filter circuits are disposed between the gate of BLF6G27-45 and the 5V power supply, and between the drain of BLF6G27-45 and the 28V power supply.

8. The UAV RF interference power amplifier circuit of claim 1, wherein the RF isolator is WG2020X-1, and the output of the isolator is connected to an antenna SMA connector.