CN209844917U

CN209844917U - DC-4GHz low-power consumption GainBlock amplifier

Info

Publication number: CN209844917U
Application number: CN201921051190.4U
Authority: CN
Inventors: 汪程飞; 刘家兵
Original assignee: Hefei Ic Valley Microelectronics Co Ltd
Current assignee: Hefei Silicon Valley Microelectronics Co ltd
Priority date: 2019-07-08
Filing date: 2019-07-08
Publication date: 2019-12-24
Anticipated expiration: 2029-07-08

Abstract

The utility model belongs to the technical field of the gain amplifier technique and specifically relates to a DC-4GHz low-power consumption GainBlock amplifier, enlarge the structure by two branch roads two-stage and merge and form, wherein, every two-stage is enlarged the transistor of structure basic circuit for two-stage Darlington, adopt compound cross to connect the mode with two transistor collecting electrodes together, receive the base of second level transistor with the projecting pole direct coupling of first order transistor, draw forth base level, projecting pole, collecting electrode respectively at last, and this device adopts single power supply. The utility model discloses, simple structure, the size is very little, and the cost is lower. Has excellent performance in low frequency band and can be widely applied.

Description

DC-4GHz low-power consumption GainBlock amplifier

Technical Field

The utility model relates to a gain amplifier technical field specifically is a DC-4GHz low-power consumption GainBlock amplifier.

Background

The traditional amplifying circuit achieves excellent performance through a complex topological structure, and is large in size, high in power consumption and expensive in cost.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a DC-4GHz low-power consumption GainBlock amplifier to solve the problem that proposes in the above-mentioned background art. The DC-4GHz low-power-consumption GainBlock amplifier is simple in circuit structure, free of a complex matching network, greatly reduced in size and cost compared with a traditional radio frequency amplifier, and capable of providing excellent performance in a low frequency band.

In order to achieve the above object, the utility model provides a following technical scheme:

a DC-4GHz low-power-consumption GainBlock amplifier is formed by combining two branch circuit two-stage amplification structures, wherein a basic circuit of each two-stage amplification structure is a transistor with a two-stage Darlington structure, collectors of the two transistors are connected together in a composite connection mode, an emitter of a first-stage transistor is directly coupled to a base of a second-stage transistor, and finally a base, the emitter and the collector are respectively led out, and the device is powered by a single power supply.

Preferably, the first stage transistor and the second stage transistor have their bases connected as a radio frequency input port, their collectors connected as a radio frequency output port, and two second stage transistors.

Preferably, three stages of transistors of each stage are connected with a bias resistor.

Preferably, the radio frequency output port and the radio frequency output port are connected with a blocking capacitor, and the single power supply supplies power to the device through a radio frequency choke coil.

Preferably, the transient protection circuit further comprises a transistor, two resistors are connected to a base of the transistor, one of the two resistors is grounded, the other resistor is connected to a collector of the first stage transistor and a collector of the second stage transistor, a collector of the transistor is connected to a collector of the first stage transistor, and an emitter of the transistor is grounded through the resistor.

Compared with the prior art, the beneficial effects of the utility model are that:

the utility model discloses circuit structure is simple, does not have complicated matching network, compares with traditional radio frequency amplifier, and size and cost reduce greatly, can provide excellent performance at the low frequency band.

The utility model discloses the circuit, simple structure, the size is very little, and the cost is lower. Has excellent performance in low frequency band and can be widely applied.

Drawings

Fig. 1 is a schematic diagram of the circuit structure of the present invention;

FIG. 2 is a graph showing the gain and gain flatness test of the circuit of the present invention;

FIG. 3 is a noise figure test chart of the circuit of the present invention;

FIG. 4 is a test chart of the input/output reflection coefficient of the circuit of the present invention;

FIG. 5 is a reverse isolation test chart of the circuit of the present invention;

FIG. 6 is a graph of the circuit outputting 1dB compression point and saturated output power test;

fig. 7 is a-10 dBm testing chart of OIP3 for different frequency points of the circuit input power of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1 to 7, the present invention provides a technical solution:

a DC-4GHz low-power-consumption GainBlock amplifier is characterized in that a circuit of the amplifier is formed by combining two branch circuit two-stage amplification structures, each branch circuit is of a two-stage Darlington structure, collectors of two transistors are connected together in a composite connection mode, emitters of the transistors are directly coupled to bases of second-stage transistors, three electrodes B (base), E (emitter) and C (collector) are led out respectively, and a single power supply is adopted for supplying power to devices. The transistors employ smaller size HBT tubes.

The invention will be described in more detail below with reference to an example, with reference to fig. 1, where the circuit consists of two symmetrical branches. A two-stage amplifier is adopted, and a Darlington transistor structure is adopted.

The symbols of the transistors are Q1-Q7, the symbols of the resistors (including bias resistors) are R1-R12, and the device adopts single power supply direct current for power supply.

The emitter of Q1 is directly coupled to the bases of Q3 and Q5; the emitter of Q2 is directly coupled to the bases of Q4 and Q6;

r1, R3 provide base voltage for Q1 by voltage division, and R1 is used as a feedback circuit, so that the circuit gain and standing wave can be adjusted. R5 provides bias voltage for the base of Q3, R7 provides bias voltage for Q5, and R9 provides bias voltage for the emitter of Q5. R2, R4 provide base voltage for Q2 by voltage division, and R2 is used as a feedback circuit, so that the circuit gain and standing wave can be adjusted. R6 provides bias voltage for the base of Q4, R8 provides bias voltage for Q6, and R10 provides bias voltage for the emitter of Q6. The Q7, R11 and R12 form a transient protection circuit, and the working reliability of the circuit is improved. L1 is a radio frequency choke coil, C1 and C2 are blocking capacitors, and the appropriate values of L1, C1 and C2 are flexibly selected according to different working frequency bands.

The practical test results of the designed DC-4GHz low-power dissipation GainBlock amplifier according to the circuit structure of the circuit structure shown in the figure 1 are shown in figures 2 to 7.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. The utility model provides a DC-4GHz low-power consumption GainBlock amplifier which characterized in that: the device is formed by combining two branch two-stage amplification structures, wherein a basic circuit of each two-stage amplification structure is a transistor with a two-stage Darlington structure, collectors of the two transistors are connected together in a composite interconnection mode, an emitter of a first-stage transistor is directly coupled to a base of a second-stage transistor, and finally a base, the emitter and the collector are respectively led out, and the device is powered by a single power supply.

2. The DC-4GHz low-power-consumption GainBlock amplifier according to claim 1, characterized in that: the base level of the first-stage transistor and the base level of the second-stage transistor are connected to be used as a radio frequency input port, the collector electrode of the first-stage transistor and the collector electrode of the second-stage transistor are connected to be used as a radio frequency output port, and the number of the second-stage transistors is two.

3. The DC-4GHz low-power-consumption GainBlock amplifier according to claim 2, characterized in that: the transistors of each stage are connected with bias resistors in three stages.

4. The DC-4GHz low-power-consumption GainBlock amplifier according to claim 2, characterized in that: the radio frequency output port and the radio frequency output port are connected with a blocking capacitor, and the single power supply supplies power to the device through the radio frequency choke coil.

5. A DC-4GHz low power consumption GainBlock amplifier according to any of claims 1-4, characterized in that: the transient protection circuit comprises a transistor, wherein two resistors are connected to the base of the transistor, one of the two resistors is grounded, the other resistor is connected to the collectors of the first-stage transistor and the second-stage transistor, the collector of the transistor is connected to the collector of the first-stage transistor, and the emitter of the transistor is grounded through the resistor.