CN209821288U - Full-period detector based on mixing Schottky diode - Google Patents
Full-period detector based on mixing Schottky diode Download PDFInfo
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- CN209821288U CN209821288U CN201920219026.3U CN201920219026U CN209821288U CN 209821288 U CN209821288 U CN 209821288U CN 201920219026 U CN201920219026 U CN 201920219026U CN 209821288 U CN209821288 U CN 209821288U
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Abstract
The utility model discloses a full period detector based on mixing schottky diode relates to and examines wave tube technical field. The detector comprises a mixing Schottky diode and a detection antenna structure, wherein the mixing Schottky diode comprises two mixing detection Schottky diodes, the anode of one of the mixing detection Schottky diodes is connected with the cathode of the other mixing detection Schottky diode, the junction of the two mixing detection Schottky diodes is a first terminal of the mixing Schottky diode, the free ends of the two mixing detection Schottky diodes are a second terminal and a third terminal of the mixing detection Schottky diode, a first bias voltage is connected between the second terminal and the first terminal, and a second bias voltage is connected between the first terminal and the third terminal. The detector can detect sine analog signals and cosine analog signals in the whole time period, and power detection of millimeter wave and terahertz wave signals in the whole period is achieved.
Description
Technical Field
The utility model relates to a examine wave pipe technical field, especially relate to a full period wave detector based on mixing schottky diode.
Background
Millimeter waves refer to a section of electromagnetic waves with a frequency of 26.5GHz-300GHz, terahertz (THz) waves refer to electromagnetic waves with a frequency in the range of 0.3-3THz, and terahertz wave frequencies in the broad sense refer to 100 THz to 10THz, wherein 1THz =1000 GHz. Millimeter waves and terahertz waves have wide application prospects in the fields of high-speed wireless communication, radars, human body safety detection and the like, and in order to realize the transmission and reception of millimeter wave and terahertz frequency band signals, various millimeter wave and terahertz receiving devices cannot be separated, a frequency mixer manufactured based on a frequency mixing Schottky diode is arranged in a receiving circuit, the frequency mixer is generally driven by local oscillation power, and the frequency mixing diode is opened to detect high-frequency millimeter waves and terahertz signals. In addition to the frequency mixer, a receiving device is used for directly detecting the power of high-frequency millimeter waves and terahertz waves based on a detector, the detection mode mainly includes that when the millimeter waves and the terahertz waves irradiate on the detector, voltage changes are caused on the device by power signals, the power of the millimeter waves and the terahertz waves is detected by detecting the voltage, and the detection of the millimeter waves and the terahertz waves is realized. The conventional mixing schottky diode is a schottky diode based on a gallium arsenide GaAs material system, and generally has a single-tube configuration structure, that is, only one schottky junction is provided, and the schottky diode in this form can detect only half of sine or cosine signals in one period, but cannot detect the other half of power signals.
From the development of the current process technology, the detection chip has higher process requirements than the mixing chip, mainly because the size of the schottky junction of the detector chip is required to be in a submicron order, if the detection function is realized based on the mixing schottky diode which is easier to realize, the function of the mixing schottky diode can be fully exerted.
At present, a public report of manufacturing a detector based on a mixing schottky diode is not seen, so that a novel packaging circuit is required to be developed to package a mixer chip into a module, namely, the mixer chip is manufactured into the detector, and the detector can be directly applied to systems such as imaging and communication.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem how to provide a sinusoidal analog signal and cosine analog signal that can detect in the whole time cycle, realize the complete cycle wave detector based on mixing schottky diode to the power detection in the complete cycle of the millimeter wave of X wave band to 1000GHz frequency range and terahertz wave signal.
In order to solve the technical problem, the utility model discloses the technical scheme who takes is: a full-period detector based on a mixing Schottky diode is characterized in that: the Schottky diode frequency mixing device comprises a Schottky diode frequency mixing device and a detecting antenna structure, wherein the Schottky diode frequency mixing device comprises two Schottky diodes frequency mixing detection devices, the anode of one of the Schottky diodes frequency mixing detection devices is connected with the cathode of the other Schottky diode frequency mixing detection device, the junction of the Schottky diodes frequency mixing detection devices is a first terminal of the Schottky diode frequency mixing detection device, the free ends of the Schottky diodes frequency mixing detection devices are a second terminal and a third terminal of the Schottky diode frequency mixing detection device, a first bias voltage is connected between the second terminal and the first terminal, and a second bias voltage is connected between the first terminal and the third terminal; the detection antenna structure comprises an antenna substrate, wherein three antenna PADs corresponding to wiring terminals on the frequency mixing Schottky diode are arranged on the antenna substrate, the antenna PAD positioned on the front side is welded with a first wiring terminal of the frequency mixing Schottky diode, two antenna PADs positioned on the rear side are respectively welded with a second wiring terminal and a third wiring terminal of the frequency mixing Schottky diode, the frequency mixing Schottky diode is inversely installed on the antenna structure, the antenna structure is fixed in a brass gold-plated shell, the second wiring terminal and the third wiring terminal are signal output ends of the detector, SMA joints are connected to the signal output ends, and the SMA joints are embedded in the shell.
The further technical scheme is as follows: the mixing Schottky diode comprises a first metal electrode assembly, a second metal electrode assembly and a third metal electrode assembly which are positioned on a substrate, wherein the first metal electrode assembly is a node of the two Schottky diodes, the second metal electrode assembly and the third metal electrode assembly are respectively the other two terminals of the mixing Schottky diode, the second metal electrode assembly and the third metal electrode assembly are isolated through an isolation groove, and the first metal electrode assembly, the second metal electrode assembly and the third metal electrode assembly are respectively connected through an air bridge.
The further technical scheme is as follows: the antenna PAD that is located the front side passes through the gold wire jumper and is connected with the connecting electrode that is located the antenna substrate front side, has the clearance between two antenna PADs that are located the back, the clearance with keep apart groove looks adaptation on the mixing schottky diode, be located one of rear side antenna PAD passes through the gold wire jumper and is connected with the connecting electrode that is located the antenna substrate rear side, is located the rear side and does not have the antenna PAD and two of gold wire jumper connecting electrode respectively with an electrode pin connection.
The further technical scheme is as follows: the first metal electrode assembly, the second metal electrode assembly and the third metal electrode assembly comprise a heavily doped GaAs layer, a low doped InGaAs layer, a first silicon dioxide layer and a metal electrode layer which are arranged from bottom to top, the height of the upper surface of the metal electrode layer is larger than that of the upper surface of the first silicon dioxide layer, the first Schottky contact metal layer is respectively embedded in the silicon dioxide layers of the first metal electrode assembly and the third metal electrode assembly, the first Schottky contact metal layer is contacted with the low-doped InGaAs layer, the metal electrode layer on the second metal electrode assembly is connected with the first Schottky contact metal layer on the first metal electrode assembly through an air bridge, the metal electrode layer on the first metal electrode assembly and the first Schottky contact metal layer on the third metal electrode assembly are connected through an air bridge.
The further technical scheme is as follows: passivation layers are arranged on the periphery of the heavily doped GaAs layer in the first metal electrode assembly, the second metal electrode assembly and the third metal electrode assembly, and the height of each passivation layer is lower than that of the heavily doped GaAs layer.
The further technical scheme is as follows: the metal electrode layer comprises an ohmic contact layer positioned on a lower layer and a metal thickening layer positioned on an upper layer.
The further technical scheme is as follows: the substrate is a GaAs substrate of a semi-insulating layer.
The further technical scheme is as follows: the heavily doped GaAs layer has a thickness of 2 microns and a doping concentration of 5e18cm-3。
The further technical scheme is as follows: the thickness of the low-doped InGaAs layer is 100nm, and the doping concentration is 5e17cm-3。
The further technical scheme is as follows: the first Schottky contact metal layer is made of a titanium/platinum/gold alloy system; the ohmic contact layer is made of an alloy of the titanium/gold/germanium/nickel/gold system.
Adopt the produced beneficial effect of above-mentioned technical scheme to lie in: the detector adopts a frequency mixing Schottky diode which adopts an inverse parallel structure, sine analog signals and cosine analog signals in the whole time period can be detected by adding direct current bias voltage, and power detection of microwave, millimeter wave and terahertz wave signals in the whole period is realized. Because all there is the response in whole signal cycle based on this type of mixing schottky diode chip, can produce just two positive and negative directions and all have the electric current promptly, just also produce two voltage signal, through adopting the radio frequency to lead to and the disconnected antenna packaging circuit of direct current, can detect out the voltage of detection chip, through being connected mixing schottky diode and detection antenna structure to make antenna structure on the cavity of brass gilding, then made the novel wave detector that can work at microwave, millimeter wave and terahertz frequency channel.
Full period detector based on mixing schottky diode has following advantage: the direct current bias is needed, the bias voltage is 0.7V, the intermediate frequency SMA head is adopted to output voltage signals, and the power of millimeter waves and terahertz waves in the frequency range from the X wave band to 1000GHz can be detected; electromagnetic signals in the whole period can be detected; the input end can adopt a silicon lens or waveguide for direct coupling, and different input modes are adopted according to different frequency bands; the detection sensitivity is high and can reach more than 5000V/W; the assembly process is simple.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a schematic structural diagram of a mixing schottky diode according to an embodiment of the present invention;
fig. 2 is a simple circuit diagram of a mixing schottky diode according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a partial cross-sectional structure of a mixing schottky diode according to an embodiment of the present invention
Fig. 4 is a schematic diagram of an antenna structure according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a geophone according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a detector according to an embodiment of the present invention (with leads);
wherein: 1. a mixer detection Schottky diode; 2. a substrate; 3. a first metal electrode assembly; 4. a second metal electrode assembly; 5. a third metal electrode assembly; 6. an isolation trench; 7. an air bridge; 8. heavily doped GaAs layer; 9. a low doped InGaAs layer; 10. a first silicon dioxide layer; 11. a metal electrode layer; 12. a first Schottky contact metal layer; 13. a passivation layer; 14. an ohmic contact layer; 15. a metal thickening layer; 16. a mixing Schottky diode; 17. a detection antenna structure; 18. an antenna substrate; 19. an antenna PAD; 20. a gold wire jumper; 21. connecting the electrodes; 22. and an electrode lead.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be implemented in other ways different from the specific details set forth herein, and one skilled in the art may similarly generalize the present invention without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As shown in fig. 1, fig. 2 and fig. 5, the embodiment of the present invention discloses a mixing schottky diode-based full-period detector, which comprises a mixing schottky diode 16 and a detecting antenna structure 17, wherein the mixing schottky diode 16 comprises two mixing detecting schottky diodes 1, and the anode of one of the mixing detecting schottky diodes 1 is connected to the cathode of the other mixing detecting schottky diode 1. The junction of the two Schottky diodes is a first terminal of the mixing Schottky diode 16, the free ends of the two Schottky diodes are a second terminal and a third terminal of the mixing Schottky diode 16, a first bias voltage is connected between the second terminal and the first terminal, and a second bias voltage is connected between the first terminal and the third terminal;
as shown in fig. 4, the pickup antenna structure 17 includes an antenna substrate 18, three antenna PADs 19 corresponding to the terminals on the mixing schottky diode 16 are disposed on the antenna substrate 18, an antenna PAD19 on the front side is soldered to the first terminal of the mixing schottky diode 16, two antenna PADs 19 on the rear side are soldered to the second terminal and the third terminal of the mixing schottky diode 16, respectively, the mixing schottky diode 16 is flip-chip mounted on the antenna structure, the antenna structure is fixed in a brass gold-plated housing, and the second terminal and the third terminal are the signal output terminals of the pickup, and the signal output terminals are connected with SMA joints embedded in the housing.
The PAD of the left and right end antennas is required to be less than 1 micron, the left and right ends are in a disconnected state on direct current, and radio frequency can be in a connected state on radio frequency through electromagnetic coupling. The detector adopts a frequency mixing Schottky diode which adopts an inverse parallel structure, sine analog signals and cosine analog signals in the whole time period can be detected by adding direct current bias voltage, and power detection of microwave, millimeter wave and terahertz wave signals in the whole period is realized. Because the frequency-mixing Schottky diode chip has response in the whole signal period, the current in both the positive direction and the negative direction can be generated, and two voltage signals are generated, by using an rf-on, dc-off antenna configuration, as shown in fig. 4, by flip-chip bonding the mixer schottky diode to the packaged antenna, after the direct current bias voltage is loaded on the two mixing junctions of the mixing Schottky diode, the mixing Schottky diode responds to the power of input microwave, millimeter wave and terahertz signals and changes the power into a voltage signal, the detection voltage can be detected by a circuit, the frequency-mixing Schottky diode is connected with the antenna structure, the antenna and the flexible substrate are manufactured on a brass gold-plated cavity, then a novel full-period detector based on a mixing Schottky diode and capable of working in microwave millimeter wave and terahertz frequency bands is manufactured.
As shown in fig. 1, the mixer schottky diode includes a first metal electrode assembly 3, a second metal electrode assembly 4, and a third metal electrode assembly 5 on a substrate 2. The first metal electrode assembly 3 is a node of two schottky diodes, the second metal electrode assembly 4 and the third metal electrode assembly 5 are the other two terminals of the mixing schottky diode, the second metal electrode assembly 4 and the third metal electrode assembly 5 are isolated by an isolation groove 6, and the first metal electrode assembly 3, the second metal electrode assembly 4 and the third metal electrode assembly 5 are connected by an air bridge 7.
The frequency-mixing Schottky diode adopts two frequency-mixing detection Schottky diodes to form an inverse parallel structure, and a simple equivalent circuit of the frequency-mixing detection Schottky diode is shown in figure 2, so that sine analog signals and cosine analog signals in the whole time period can be detected, and power detection of millimeter wave signals and terahertz wave signals in the whole period is realized. In order to enable the mixing schottky diode to work above 100GHz, the anode of the schottky diode is required to be in the micron order, and in order to work up to 1000GHz, the anode of the diode needs to be in the submicron order, so in this embodiment, the anode size of the schottky diode in the mixing schottky diode is 1 micron.
As shown in fig. 5 and 6, the antenna PAD19 on the front side is connected to the connection electrode 21 on the front side of the antenna substrate 18 by the gold jumper wire 20, a gap is provided between the two antenna PADs 19 on the rear side, the gap is matched with the isolation groove 6 on the mixing schottky diode 16, one of the antenna PADs 19 on the rear side is connected to the connection electrode on the rear side of the antenna substrate 18 by the gold jumper wire 20, the antenna PAD19 on the rear side and having no gold jumper wire and the two connection electrodes 21 are connected to one electrode lead 22, respectively.
The detection chip is flip-chip bonded to the antenna structure, as shown in fig. 5-6, the antenna PAD is divided into an upper portion and a lower portion, the upper portion is divided into a left portion and a right portion, the left portion and the right portion are smaller than 1 micron, the left end and the right end are in a disconnected state on direct current, and radio frequency can be in a connected state on radio frequency through electromagnetic coupling.
Further, as shown in fig. 3, the first metal electrode assembly 3, the second metal electrode assembly 4 and the third metal electrode assembly 5 include a heavily doped GaAs layer 8, a low doped InGaAs layer 9, a first silicon dioxide layer 10 and a metal electrode layer 11 disposed from bottom to top. The height of the upper surface of the metal electrode layer 11 is greater than that of the upper surface of the first silicon dioxide layer 10, the first schottky contact metal layer 12 is respectively embedded in the first silicon dioxide layers 10 of the first metal electrode assembly 3 and the third metal electrode assembly 5, and the first schottky contact metal layer 12 is in contact with the low-doped InGaAs layer 9; the metal electrode layer 11 on the second metal electrode assembly 4 and the first schottky contact metal layer 12 on the first metal electrode assembly 3 are connected through the air bridge 7, and the metal electrode layer 11 on the first metal electrode assembly 3 and the first schottky contact metal layer 12 on the third metal electrode assembly 5 are connected through the air bridge 7.
Further, as shown in fig. 3, passivation layers 13 are disposed around the heavily doped GaAs layer 8 in the first metal electrode assembly 3, the second metal electrode assembly 4, and the third metal electrode assembly 5, and the height of the passivation layers 13 is lower than that of the heavily doped GaAs layer 8. The metal electrode layer 11 includes an ohmic contact layer 15 on a lower layer and a metal thickening layer 15 on an upper layer.
Preferably, the substrate 2 is a semi-insulating layer GaAs substrate. The heavily doped GaAs layer 8 has a thickness of 2 microns and a doping concentration of 5e18cm-3. The thickness of the low-doped InGaAs layer 9 is 100nm, and the doping concentration is 5e17cm-3. The first schottky contact metal layer 12 is made of a titanium/platinum/gold alloy system; the ohmic contact layer 14 is made of an alloy of the titanium/gold/germanium/nickel/gold system. In this embodiment, the schottky diode has a diameter of 1.5 μm, the anode is circular, the zero-bias junction capacitance is 4fF, and the chip thickness of the mixing schottky diode needs to be less than 20 μm to reduce the parasitic parameter. The series resistance of the mixing schottky diode is 6 ohms, the turn-on voltage is 0.7V, the ideality factor is 1.18, and the saturation current is 47 fA.
When the detector works normally, two direct current bias voltages are needed, the direct current bias voltages are mainly used for opening a Schottky junction of the frequency-mixing detection Schottky diode, potential barriers are reduced, the frequency-mixing detection Schottky diode is in a critical point of a direct current opening state, and at the moment, the frequency-mixing detection Schottky diode chip has the maximum response value to external input power. As shown in FIG. 6, the bias voltages Vbias1 and Vbias2 are 0.7V in magnitude. The detector output voltage is composed of two parts, as shown in fig. 6, the voltage of the antenna structure is introduced from the antenna to a soft substrate (such as a rogers 5880 soft substrate) through gold wire jumpers, Vout = V1 + V2, where V1 is the signal output voltage of the first half period of a signal cycle, and V2 is the signal output voltage of the second half period of a signal cycle. Vout voltage can be obtained through a simple differential circuit, and the output end of the Vout adopts a standard SMA connector for output.
Full period detector based on mixing schottky diode has following advantage: the direct current bias is needed, the bias voltage is 0.7V, the intermediate frequency SMA head is adopted to output voltage signals, and the power of millimeter waves and terahertz waves in the frequency range from the X wave band to 1000GHz can be detected; electromagnetic signals in the whole period can be detected; the input end can adopt a silicon lens or waveguide for direct coupling, and different input modes are adopted according to different frequency bands; the detection sensitivity is high and can reach more than 5000V/W; the assembly process is simple.
Claims (10)
1. A full-period detector based on a mixing Schottky diode is characterized in that: the frequency mixing Schottky diode device comprises a frequency mixing Schottky diode (16) and a detecting antenna structure (17), wherein the frequency mixing Schottky diode (16) comprises two frequency mixing detecting Schottky diodes (1), the anode of one frequency mixing detecting Schottky diode (1) is connected with the cathode of the other frequency mixing detecting Schottky diode (1), the junction of the two frequency mixing detecting Schottky diodes is the first terminal of the frequency mixing Schottky diode (16), the free ends of the two frequency mixing detecting Schottky diodes are the second terminal and the third terminal of the frequency mixing Schottky diode (16), a first bias voltage is connected between the second terminal and the first terminal, and a second bias voltage is connected between the first terminal and the third terminal; the wave detection antenna structure (17) comprises an antenna substrate (18), three antenna PADs (19) corresponding to wiring terminals on the frequency mixing Schottky diode (16) are arranged on the antenna substrate (18), the antenna PAD (19) on the front side is welded with a first wiring terminal of the frequency mixing Schottky diode (16), two antenna PADs (19) on the rear side are respectively welded with a second wiring terminal and a third wiring terminal of the frequency mixing Schottky diode (16), the frequency mixing Schottky diode (16) is inversely installed on the antenna structure, the antenna structure is fixed in a brass gold-plated shell, the second wiring terminal and the third wiring terminal are signal embedded output ends of the wave detector, SMA joints are connected to the signal output ends, and the SMA joints are arranged on the shell.
2. The mixer schottky diode-based full period detector of claim 1 wherein: the mixing Schottky diode comprises a first metal electrode assembly (3), a second metal electrode assembly (4) and a third metal electrode assembly (5) which are positioned on a substrate (2), wherein the first metal electrode assembly (3) is a node of two Schottky diodes, the second metal electrode assembly (4) and the third metal electrode assembly (5) are the other two terminals of the mixing Schottky diode respectively, the second metal electrode assembly (4) and the third metal electrode assembly (5) are isolated through an isolation groove (6), and the first metal electrode assembly (3), the second metal electrode assembly (4) and the third metal electrode assembly (5) are connected through an air bridge (7) respectively.
3. The mixer schottky diode-based full period detector of claim 2, wherein: the antenna PAD (19) positioned on the front side is connected with a connecting electrode (21) positioned on the front side of an antenna substrate (18) through a gold wire jumper (20), a gap is formed between the two antenna PADs (19) positioned behind, the gap is matched with an isolation groove (6) on the mixing Schottky diode (16), one antenna PAD (19) positioned on the rear side is connected with the connecting electrode positioned on the rear side of the antenna substrate (18) through the gold wire jumper (20), and the antenna PAD (19) positioned on the rear side and not provided with the gold wire jumper and the two connecting electrodes (21) are respectively connected with an electrode lead (22).
4. The mixer schottky diode-based full period detector of claim 2, wherein: the first metal electrode assembly (3), the second metal electrode assembly (4) and the third metal electrode assembly (5) comprise a heavily doped GaAs layer (8), a low doped InGaAs layer (9), a first silicon dioxide layer (10) and a metal electrode layer (11) which are arranged from bottom to top, the height of the upper surface of the metal electrode layer (11) is larger than that of the upper surface of the first silicon dioxide layer (10), a first Schottky contact metal layer (12) is embedded in the first silicon dioxide layer (10) of the first metal electrode assembly (3) and the first silicon dioxide layer (10) of the third metal electrode assembly (5) respectively, the first Schottky contact metal layer (12) is in contact with the low doped InGaAs layer (9), the metal electrode layer (11) on the second metal electrode assembly (4) is connected with the first Schottky contact metal layer (12) on the first metal electrode assembly (3) through an air bridge (7), the metal electrode layer (11) on the first metal electrode assembly (3) and the first Schottky contact metal layer (12) on the third metal electrode assembly (5) are connected through an air bridge (7).
5. The mixer schottky diode-based full period detector of claim 4 wherein: passivation layers (13) are arranged on the periphery of the heavily doped GaAs layer (8) in the first metal electrode assembly (3), the second metal electrode assembly (4) and the third metal electrode assembly (5), and the height of each passivation layer (13) is lower than that of the heavily doped GaAs layer (8).
6. The mixer schottky diode-based full period detector of claim 4 wherein: the metal electrode layer (11) comprises an ohmic contact layer (14) positioned on the lower layer and a metal thickening layer (15) positioned on the upper layer.
7. The mixer schottky diode-based full period detector of claim 4 wherein: the substrate (2) is a GaAs substrate of a semi-insulating layer.
8. The mixer schottky diode-based full period detector of claim 4 wherein: the heavily doped GaAs layer (8) has a thickness of 2 microns and a doping concentration of 5e18cm-3。
9. The mixer schottky diode-based full period detector of claim 4 wherein: the thickness of the low-doped InGaAs layer (9) is 100nm, and the doping concentration is 5e17cm-3。
10. The mixer schottky diode-based full period detector of claim 4 wherein: the first Schottky contact metal layer (12) is made of a titanium/platinum/gold alloy system; the ohmic contact layer (14) is made of an alloy of the titanium/gold/germanium/nickel/gold system.
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| CN109725204A (en) * | 2019-02-21 | 2019-05-07 | 北京星英联微波科技有限责任公司 | Complete period wave detector based on mixing Schottky diode |
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