CN110600448A - Terahertz schottky diode - Google Patents
Terahertz schottky diode Download PDFInfo
- Publication number
- CN110600448A CN110600448A CN201910892946.6A CN201910892946A CN110600448A CN 110600448 A CN110600448 A CN 110600448A CN 201910892946 A CN201910892946 A CN 201910892946A CN 110600448 A CN110600448 A CN 110600448A
- Authority
- CN
- China
- Prior art keywords
- layer
- schottky diode
- contact metal
- metal layer
- beam lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 230000008719 thickening Effects 0.000 claims abstract description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 238000001465 metallisation Methods 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 35
- 239000010931 gold Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a terahertz Schottky diode and relates to the technical field of Schottky diodes. The Schottky diode comprises a Schottky diode body, a cathode beam lead and an anode beam lead are arranged on the back of the Schottky diode body, and the cathode beam lead and the anode beam lead are connected with a bonding Pad (metal thickening layer 4) on the front side through internal metallization through holes. Through the beam lead at the back, the front assembly process of the diode can be more convenient, the assembly process difficulty of the diode is greatly reduced, the beam lead is prevented from deforming when the front assembly of the Schottky diode is carried out, electromagnetic loss is caused when electromagnetic signals are transmitted on the surface of the Schottky diode, the chip performance of the device can be better played, and lower mixing loss and higher output power are realized.
Description
Technical Field
The invention relates to the technical field of Schottky diodes, in particular to a terahertz Schottky diode.
Background
Millimeter waves refer to a section of electromagnetic waves with a frequency of 26.5GHz-300GHz, terahertz (THz) waves refer to electromagnetic waves with a frequency in the range of 0.3-3THz, and terahertz wave frequencies in the broad sense refer to 100 THz to 10THz, wherein 1THz =1000 GHz. Millimeter waves and terahertz waves have wide application prospects in the fields of high-speed wireless communication, radars, human body safety detection and the like, and in order to realize the transmission and the reception of millimeter wave and terahertz frequency band signals, various millimeter wave and terahertz devices cannot be distinguished, and a conventional chip is a Schottky diode based on a gallium arsenide GaAs material system. Schottky diodes can be made in both non-beam and beam-beam forms, with the beam-beam form being studied at home and abroad in recent years due to ease of assembly. Specifically, a beam lead made of a gold ribbon is formed on the periphery of the schottky diode. In all current beam leads, the beam lead is fabricated on the front side of the schottky diode and connected to the pad of the diode. When the beam lead arranged on the front surface is assembled on the front surface of the Schottky diode, the beam lead is deformed due to the thickness of the Schottky diode, so that electromagnetic signals are transmitted on the surface of the beam lead, and the electromagnetic loss is greatly increased.
Disclosure of Invention
The invention aims to solve the technical problem of how to provide a terahertz schottky diode which can avoid the deformation of a beam lead when the front of the schottky diode is assembled so as to greatly increase the electromagnetic loss when electromagnetic signals are transmitted on the surface of the terahertz schottky diode.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a terahertz is schottky diode which characterized in that: the Schottky diode junction structure comprises a semi-insulating GaAs substrate, wherein a heavily doped GaAs layer is arranged on the upper surface of the semi-insulating GaAs substrate, a passivation layer is further arranged on the upper surface of the semi-insulating GaAs substrate and divides the heavily doped GaAs layer into a left part and a right part, the upper surface of each heavily doped GaAs layer is in a step shape, the step surface close to the inside of the Schottky diode junction is higher than the step surface on the outer side, a low doped GaAs layer is arranged on the higher step surface, an ohmic contact metal layer is arranged on the lower step surface and is the cathode of the Schottky diode junction, a metal thickening layer is arranged on the upper surface of the ohmic contact metal layer, a Schottky contact metal layer is arranged on the upper surface of one of the low doped GaAs layers and is the anode of the Schottky diode junction, and a silicon dioxide layer is arranged on the low doped GaAs layer outside the Schottky contact metal layer, the Schottky contact metal layer is connected with the metal thickening layer on the other side through an air bridge;
the inner side end of the cathode beam lead is fixed on the lower surface of the semi-insulating GaAs substrate on the lower side of the ohmic contact metal layer on the left side, the outer side end of the cathode beam lead horizontally extends to the left outside of the semi-insulating GaAs substrate, the lower side end of a first metalized through hole is electrically connected with the inner side end of the cathode beam lead, and the upper end of the first metalized through hole sequentially penetrates through the heavily doped GaAs layer on the left side and the ohmic contact metal layer on the left side and then is electrically connected with the metal thickening layer on the left side;
the inner side end of the anode beam lead is fixed on the lower surface of the semi-insulating GaAs substrate on the lower side of the ohmic contact metal layer on the right side, the outer side end of the anode beam lead horizontally extends to the right outside the semi-insulating GaAs substrate, the lower side end of the second metalized through hole is electrically connected with the inner side end of the anode beam lead, and the upper end of the second metalized through hole sequentially penetrates through the heavily doped GaAs layer on the right side and the ohmic contact metal layer on the right side and then is electrically connected with the metal thickening layer on the right side.
Preferably, the passivation layer is made of silicon nitride.
Preferably, the metal for manufacturing the ohmic contact metal layer is Ni/Au/Ge/Ni/Au from bottom to top.
Preferably, the manufacturing metal of the Schottky contact metal layer is Ti/Pt/Au from bottom to top.
Adopt the produced beneficial effect of above-mentioned technical scheme to lie in: the preparation process of the diode is compatible with the existing Schottky diode process; the manufactured terahertz Schottky diode can be applied to a mixing tube and can also be used for manufacturing a frequency doubling tube; through the beam lead at the back, the front assembly process of the diode can be more convenient, the assembly process difficulty of the diode is greatly reduced, the beam lead is prevented from deforming when the front assembly of the Schottky diode is carried out, electromagnetic loss is caused when electromagnetic signals are transmitted on the surface of the Schottky diode, the chip performance of the device can be better played, and lower mixing loss and higher output power are realized.
Drawings
Fig. 1 is a schematic top view of a terahertz schottky diode according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of FIG. 1;
wherein: 1. a passivation layer; 2. a silicon dioxide layer; 3. an ohmic contact metal layer; 4. a metal thickening layer; 5. a semi-insulating GaAs substrate; 6. heavily doped GaAs layer; 7. a low-doped GaAs layer; 8. a Schottky contact metal layer; 9. an air bridge 10, a cathode beam lead; 11. a first metallized via; 12. an anode beam lead; 13. a second metalized via.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As shown in fig. 1-2, the invention discloses a terahertz schottky diode, which comprises a semi-insulating GaAs substrate 5, wherein a heavily doped GaAs layer 6 is arranged on the upper surface of the semi-insulating GaAs substrate 5, a passivation layer 1 is further arranged on the upper surface of the semi-insulating GaAs substrate 5, and the passivation layer 1 can be made of silicon nitride. The passivation layer 1 divides the heavily doped GaAs layer 6 into a left part and a right part, the upper surface of each heavily doped GaAs layer 6 is in a step shape, the step surface close to the inside of the Schottky diode junction is higher than the step surface on the outer side, the lower doped GaAs layer 7 is arranged on the higher step surface, the ohmic contact metal layer 3 is arranged on the lower step surface, and the manufacturing metal of the ohmic contact metal layer 3 can be Ni/Au/Ge/Ni/Au from bottom to top. The ohmic contact metal layer 3 is a cathode of the Schottky diode junction, a metal thickening layer 4 is arranged on the upper surface of the ohmic contact metal layer 3, a Schottky contact metal layer 8 is arranged on the upper surface of one of the low-doped GaAs layers 7, and the manufacturing metal of the Schottky contact metal layer 8 can be Ti/Pt/Au from bottom to top. The Schottky contact metal layer 8 is an anode of the Schottky diode junction, the low-doped GaAs layer 7 outside the Schottky contact metal layer 8 is provided with the silicon dioxide layer 2, and the Schottky contact metal layer 8 is connected with the metal thickening layer 4 on the other side through the air bridge 9.
As shown in fig. 2, the inside end of the cathode beam lead 10 is fixed on the lower surface of the semi-insulating GaAs substrate 5 below the left ohmic contact metal layer 3, the outside end of the cathode beam lead 10 extends horizontally to the left beyond the semi-insulating GaAs substrate 5, the bottom end of the first metalized through hole 11 is electrically connected to the inside end of the cathode beam lead 10, and the upper end of the first metalized through hole 11 sequentially passes through the left heavily doped GaAs layer 6 and the left ohmic contact metal layer 3 and then is electrically connected to the left metal thickening layer 4;
the inner side end of the anode beam lead 12 is fixed on the lower surface of the semi-insulating GaAs substrate 5 below the right ohmic contact metal layer 3, the outer side end of the anode beam lead 12 horizontally extends to the right to the outside of the semi-insulating GaAs substrate 5, the lower side end of the second metalized through hole 13 is electrically connected with the inner side end of the anode beam lead 12, and the upper end of the second metalized through hole 13 sequentially penetrates through the right heavily doped GaAs layer 6 and the right ohmic contact metal layer 3 and then is electrically connected with the right metal thickening layer 4.
After the front side of the schottky diode is manufactured, the whole wafer is adhered to sapphire or other substrates, the whole wafer is thinned to about 25 micrometers generally, and then a back side through hole process is performed, mainly to connect a beam lead manufactured on the back side with a Pad (metal thickening layer 4) on the front side. And after the through hole is finished, manufacturing beam leads (a cathode beam lead and an anode beam lead) inside and at the bottom of the through hole by evaporating metal.
The preparation process of the diode is compatible with the existing Schottky diode process; the manufactured terahertz Schottky diode can be applied to a mixing tube and can also be used for manufacturing a frequency doubling tube; through the beam lead at the back, the front assembly process of the diode can be more convenient, the assembly process difficulty of the diode is greatly reduced, the beam lead is prevented from deforming when the front assembly of the Schottky diode is carried out, electromagnetic loss is caused when electromagnetic signals are transmitted on the surface of the Schottky diode, the chip performance of the device can be better played, and lower mixing loss and higher output power are realized.
Claims (4)
1. A terahertz is schottky diode which characterized in that: the Schottky diode junction structure comprises a semi-insulating GaAs substrate (5), wherein a heavily doped GaAs layer (6) is arranged on the upper surface of the semi-insulating GaAs substrate (5), a passivation layer (1) is further arranged on the upper surface of the semi-insulating GaAs substrate (5), the heavily doped GaAs layer (6) is divided into a left part and a right part by the passivation layer (1), the upper surface of each heavily doped GaAs layer (6) is in a step shape, the step surface close to the inside of the Schottky diode junction is higher than the step surface on the outer side, a low doped GaAs layer (7) is arranged on the higher step surface, an ohmic contact metal layer (3) is arranged on the lower step surface, the ohmic contact metal layer (3) is the cathode of the Schottky diode junction, a metal thickening layer (4) is arranged on the upper surface of the ohmic contact metal layer (3), a Schottky contact metal layer (8) is arranged on the upper surface of one of the low doped GaAs layers (7), the Schottky contact metal layer (8) is an anode of the Schottky diode junction, a silicon dioxide layer (2) is arranged on the low-doped GaAs layer (7) outside the Schottky contact metal layer (8), and the Schottky contact metal layer (8) is connected with the metal thickening layer (4) on the other side through an air bridge (9);
the inner side end of a cathode beam lead (10) is fixed on the lower surface of a semi-insulating GaAs substrate (5) on the lower side of a left ohmic contact metal layer (3), the outer side end of the cathode beam lead (10) horizontally extends to the left beyond the semi-insulating GaAs substrate (5), the lower side end of a first metalized through hole (11) is electrically connected with the inner side end of the cathode beam lead (10), and the upper end of the first metalized through hole (11) sequentially penetrates through a left heavily doped GaAs layer (6) and a left ohmic contact metal layer (3) and then is electrically connected with a left metal thickening layer (4);
the inner side end of the anode beam lead (12) is fixed on the lower surface of a semi-insulating GaAs substrate (5) on the lower side of the ohmic contact metal layer (3) on the right side, the outer side end of the anode beam lead (12) horizontally extends to the right beyond the semi-insulating GaAs substrate (5), the lower side end of a second metalized through hole (13) is electrically connected with the inner side end of the anode beam lead (12), and the upper end of the second metalized through hole (13) sequentially penetrates through a heavily doped GaAs layer (6) on the right side and the ohmic contact metal layer (3) on the right side and then is electrically connected with a metal thickening layer (4) on the right side.
2. The terahertz schottky diode of claim 1, wherein: the passivation layer (1) is made of silicon nitride.
3. The terahertz schottky diode of claim 1, wherein: the metal for manufacturing the ohmic contact metal layer (3) is Ni/Au/Ge/Ni/Au from bottom to top.
4. The terahertz schottky diode of claim 1, wherein: the manufacturing metal of the Schottky contact metal layer (8) is Ti/Pt/Au from bottom to top.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910892946.6A CN110600448B (en) | 2019-09-20 | 2019-09-20 | Terahertz Schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910892946.6A CN110600448B (en) | 2019-09-20 | 2019-09-20 | Terahertz Schottky diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110600448A true CN110600448A (en) | 2019-12-20 |
| CN110600448B CN110600448B (en) | 2023-03-24 |
Family
ID=68861843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910892946.6A Active CN110600448B (en) | 2019-09-20 | 2019-09-20 | Terahertz Schottky diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110600448B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111509051A (en) * | 2020-04-30 | 2020-08-07 | 北京国联万众半导体科技有限公司 | Novel millimeter wave Ga2O3Schottky diode |
| CN112289865A (en) * | 2020-10-12 | 2021-01-29 | 中国电子科技集团公司第十三研究所 | Biased mixing Schottky diode structure and semiconductor device |
| CN113451420A (en) * | 2021-07-23 | 2021-09-28 | 深圳市电科智能科技有限公司 | Centrosymmetric GaN Schottky diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137572A (en) * | 2011-11-28 | 2013-06-05 | 英飞凌科技股份有限公司 | Chip-package and a method for forming a chip-package |
| CN105826400A (en) * | 2016-05-24 | 2016-08-03 | 中国电子科技集团公司第十三研究所 | Terahertz frequency-doubling Schottky diode with anode junctions of different sizes |
| CN108767018A (en) * | 2018-05-22 | 2018-11-06 | 中国工程物理研究院电子工程研究所 | A kind of epitaxial structure and process making high frequency GaN base film schottky device |
-
2019
- 2019-09-20 CN CN201910892946.6A patent/CN110600448B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137572A (en) * | 2011-11-28 | 2013-06-05 | 英飞凌科技股份有限公司 | Chip-package and a method for forming a chip-package |
| CN105826400A (en) * | 2016-05-24 | 2016-08-03 | 中国电子科技集团公司第十三研究所 | Terahertz frequency-doubling Schottky diode with anode junctions of different sizes |
| CN108767018A (en) * | 2018-05-22 | 2018-11-06 | 中国工程物理研究院电子工程研究所 | A kind of epitaxial structure and process making high frequency GaN base film schottky device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111509051A (en) * | 2020-04-30 | 2020-08-07 | 北京国联万众半导体科技有限公司 | Novel millimeter wave Ga2O3Schottky diode |
| CN112289865A (en) * | 2020-10-12 | 2021-01-29 | 中国电子科技集团公司第十三研究所 | Biased mixing Schottky diode structure and semiconductor device |
| CN112289865B (en) * | 2020-10-12 | 2022-12-13 | 中国电子科技集团公司第十三研究所 | Biased mixing Schottky diode structure and semiconductor device |
| CN113451420A (en) * | 2021-07-23 | 2021-09-28 | 深圳市电科智能科技有限公司 | Centrosymmetric GaN Schottky diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110600448B (en) | 2023-03-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110600448B (en) | Terahertz Schottky diode | |
| CN104795453B (en) | A kind of more beam lead GaAs base schottky frequency doubled diodes | |
| CN109616513B (en) | Terahertz Schottky diode for improving current crowding effect based on multi-split anode | |
| US5883422A (en) | Reduced parasitic capacitance semiconductor devices | |
| CN115763446B (en) | Radio frequency integrated device, preparation method thereof and transceiver chip comprising radio frequency integrated device | |
| CN109616526B (en) | Terahertz Schottky diode for improving current crowding effect based on trapezoidal anode | |
| CN112289865B (en) | Biased mixing Schottky diode structure and semiconductor device | |
| CN114496812A (en) | Power semiconductor device, preparation method thereof and radio frequency power amplifier | |
| CN111048598A (en) | GaN Schottky diode | |
| CN109855728B (en) | Full-period detector | |
| CN111244190B (en) | Double-barrier Schottky diode | |
| CN105845742B (en) | Beam lead terahertz Schottky diode | |
| CN111128911A (en) | Millimeter wave MMIC heat dissipation package based on 3D heterogeneous integration technology | |
| JP2003124222A (en) | Semiconductor device | |
| CN205657060U (en) | Beam lead terahertz is schottky diode now | |
| CN111509051A (en) | Novel millimeter wave Ga2O3Schottky diode | |
| CN112289791B (en) | Schottky diode and semiconductor device for terahertz frequency band junction capacitance test | |
| US10957598B2 (en) | Terahertz device | |
| CN215815889U (en) | Centrosymmetric Si-based GaN Schottky diode | |
| CN218568838U (en) | Double-balance Schottky diode for fundamental wave frequency mixing | |
| CN215815890U (en) | Centrosymmetric double-row Si-based GaN Schottky diode | |
| CN207269025U (en) | A kind of new mHEMT devices | |
| CN103311180A (en) | Chip layout method for improving performance of MMIC (Microwave Monolithic Integrated Circuit) power amplifier | |
| CN110808292A (en) | GaN-based completely vertical Schottky varactor based on metal eave structure and preparation method thereof | |
| CN218867113U (en) | Millimeter wave thin film schottky diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |