CN112289791B - Schottky diode and semiconductor device for terahertz frequency band junction capacitance test - Google Patents
Schottky diode and semiconductor device for terahertz frequency band junction capacitance test Download PDFInfo
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- CN112289791B CN112289791B CN202011085015.4A CN202011085015A CN112289791B CN 112289791 B CN112289791 B CN 112289791B CN 202011085015 A CN202011085015 A CN 202011085015A CN 112289791 B CN112289791 B CN 112289791B
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- 238000012360 testing method Methods 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 title abstract description 8
- 239000002184 metal Substances 0.000 claims description 67
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 34
- 238000002161 passivation Methods 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 230000008719 thickening Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000010998 test method Methods 0.000 claims 3
- 238000005516 engineering process Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention provides a Schottky diode and a semiconductor device for testing junction capacitance in a terahertz frequency band, belongs to the technical field of semiconductor devices, and comprises a plurality of Schottky junctions which are connected in parallel in the same direction. The Schottky diode for the terahertz frequency band junction capacitance test adopts a parallel connection mode of a plurality of homodromous Schottky junctions, so that the total capacitance value is increased, the capacitance test precision is improved, and the accurate junction capacitance of a unijunction diode is obtained by testing the accurate values of the capacitances of a plurality of diodes and then performing linear fitting.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a Schottky diode for junction capacitance test in a terahertz frequency band and a semiconductor device.
Background
Terahertz (THz) waves, which are electromagnetic waves having a frequency in the range of 0.1 to 10THz in a broad sense, are between millimeter waves and infrared light. The THz wave occupies a special position in an electromagnetic wave spectrum, has the characteristics of high frequency, wide bandwidth, good safety and the like, and is widely applied to security inspection, communication, radar and radio astronomy.
At present, the terahertz technology is far from the application maturity of microwave and optical technologies, and the development of the terahertz technology is limited by a terahertz source and terahertz detection equipment to a great extent. The terahertz plane Schottky diode based on the GaAs material has the advantages of high cut-off frequency, room-temperature operation and the like, and becomes a core component of a solid terahertz electronic system. Meanwhile, the Schottky diode can generate terahertz waves in a frequency doubling mode to realize a terahertz power source, can detect terahertz signals in a frequency mixing mode, and is widely applied to the existing terahertz system.
Formula (1) is a cut-off frequency formula of the schottky diode, and it can be seen from the formula that the cut-off frequency of the diode is related to junction capacitance and series resistance, and in order to ensure that the device has good working performance in the terahertz frequency band, the schottky diode is required to have small junction capacitance and series resistance, so that the device has higher cut-off frequency.
According to literature reports, the junction capacitance of the terahertz schottky diode is generally between dozens of fF and 1fF, and even smaller. Because of the precision limitation of the test equipment, the small junction capacitance is difficult to test, and the junction capacitance of the device is obtained internationally in a calculation or fitting mode, but the numerical value obtained by the method is not accurate, and when a circuit and a module are designed, the accurate junction capacitance can be obtained only by carrying out multiple times of optimization according to the test result of the module.
Disclosure of Invention
The invention aims to provide a Schottky diode for testing junction capacitance in a terahertz frequency band, and aims to solve the problem that the existing junction capacitance testing precision is not accurate.
In order to achieve the purpose, the invention adopts the technical scheme that: provided is a Schottky diode for a terahertz frequency band junction capacitance test, comprising: a plurality of Schottky junctions connected in parallel in the same direction.
As another embodiment of the present application, the schottky junction includes a substrate, a heavily doped GaAs layer and a passivation layer are disposed on an upper surface of the substrate, the heavily doped GaAs layer is separated by the passivation layer, an isolation region is formed above the passivation layer, two opposite surfaces of the heavily doped GaAs layer after separation are inclined surfaces, and a distance between the two inclined surfaces gradually increases from bottom to top; the upper surfaces of the heavily doped GaAs layers, which are close to one side of the passivation layer, are provided with low-doped GaAs layers, the upper surfaces of the low-doped GaAs layers are provided with silicon dioxide layers, one of the low-doped GaAs layers is also provided with a Schottky contact metal layer, and the silicon dioxide layers surround the Schottky contact metal layer; the upper surfaces of the heavily doped GaAs layers, which are far away from the passivation layer, are provided with ohmic contact metal layers, and the upper surfaces of the ohmic contact metal layers are provided with metal thickening layers; the Schottky contact metal layer is connected with the opposite metal thickening layer through an air bridge.
As another embodiment of the present application, the schottky contact metal layer is a multilayer metal structure, and includes a Ti metal layer, a Pt metal layer, and an Au metal layer from bottom to top.
As another embodiment of the present application, the ohmic contact metal layer is a multi-layer metal structure, and the ohmic contact metal layer is a Ni metal layer, an Au metal layer, a Ge metal layer, a Ni metal layer, and an Au metal layer in sequence from bottom to top.
As another embodiment of the present application, the passivation layer is silicon nitride.
As another embodiment of the present application, the metal thickening layer is Au metal.
As another embodiment of the application, the heavily doped GaAs layer has the doping concentration of 10^18cm -3 Magnitude.
As another embodiment of the present application, the low doped GaAs layer has a doping concentration of 1e16 cm -3 -5e17cm -3 。
The invention also provides a semiconductor device which comprises the Schottky diode for testing the junction capacitance of the terahertz frequency band.
The Schottky diode for testing the junction capacitance of the terahertz frequency band has the advantages that: compared with the prior art, the Schottky diode for the terahertz frequency band junction capacitance test adopts a parallel connection mode of a plurality of homodromous Schottky junctions, so that the total capacitance value is increased, the capacitance test precision is improved, and the accurate junction capacitance of a unijunction diode is obtained by testing the accurate values of the capacitances of a plurality of diodes and then performing linear fitting.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic top view of a schottky diode for testing junction capacitance in a terahertz frequency band according to an embodiment of the present invention;
FIG. 2 isbase:Sub>A sectional view taken along line A-A of FIG. 1;
fig. 3 is a circuit diagram of a schottky diode for testing junction capacitance in the thz frequency band according to an embodiment of the present invention.
In the figure: 1. a substrate; 2. heavily doped GaAs layer; 3. an ohmic contact metal layer; 4. a metal thickening layer; 5. a low doped GaAs layer; 6. a silicon dioxide layer; 7. a Schottky contact metal layer; 8. an air bridge; 9. and a passivation layer.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 and fig. 3 together, a schottky diode for testing junction capacitance in the thz frequency band according to the present invention will now be described. The Schottky diode for the terahertz frequency band junction capacitance test comprises a plurality of Schottky junctions which are connected in parallel in the same direction.
The invention mainly considers that the diode model is inaccurate due to the fact that the diode cannot reach accurate junction capacitance parameters in the practical application process, so that circuit design and module design are deviated and even the diode model cannot work.
Compared with the prior art, the Schottky diode for testing the junction capacitance of the terahertz frequency band adopts a structure that a plurality of Schottky junctions are connected in parallel, so that the total capacitance of a device is increased, and the testing precision is improved.
As shown in figure 1, the diode comprises 7 Schottky junctions which are connected in parallel in the same direction, and the total capacitance of the diode device is improved by increasing the number of the Schottky junctions which are connected in parallel, so that the test precision is improved. Taking a single Schottky junction capacitor as an example of 40fF, 7 Schottky junctions are connected in parallel, the total capacitance is 280fF, and the test precision and the requirements on instruments are greatly reduced. The junction capacitance of each Schottky junction in the diode group is sequentially tested, the capacitance testing precision is higher and higher along with the increase of the number of the Schottky junctions, and then the tested data are subjected to linear fitting, so that the junction capacitance of the unijunction diode is more accurate.
As another example, the diode may further include schottky junctions in numbers of 2, 3, 4, 5, 6, 8, 9, … …, and so on. The more Schottky junctions connected in parallel, the greater the total capacitance.
As a specific implementation manner of the embodiment of the present invention, referring to fig. 1 to 2, the schottky junction includes a substrate 1, a heavily doped GaAs layer 2 and a passivation layer 9 are disposed on an upper surface of the substrate 1, the passivation layer 9 separates the heavily doped GaAs layer 2, an isolation region is formed above the passivation layer 9, two opposite surfaces of the heavily doped GaAs layer 2 after separation are inclined surfaces, and a distance between the two inclined surfaces gradually increases from bottom to top; the upper surfaces of the heavily doped GaAs layers 2, which are close to one side of the passivation layer 9, are provided with low-doped GaAs layers 5, the upper surfaces of the low-doped GaAs layers 5 are provided with silicon dioxide layers 6, one of the low-doped GaAs layers 5 is also provided with a Schottky contact metal layer 7, and the silicon dioxide layers 6 surround the Schottky contact metal layer 7; the upper surfaces of the heavily doped GaAs layers 2, which are far away from the passivation layer 9, are provided with ohmic contact metal layers 3, and the upper surfaces of the ohmic contact metal layers 3 are provided with metal thickening layers 4; the schottky contact metal layer 7 is connected to the opposite metal thickening layer 4 by an air bridge 8.
The Schottky diode for the terahertz frequency band junction capacitance test can be realized through a mature Schottky diode processing technology, the manufacturing technology of the Schottky diode is mature at home and abroad at present, and the manufacturing technology comprises cathode ohmic contact, anode Schottky metal evaporation, air bridge 8 connection and isolation groove corrosion, and a passivation layer 9 is manufactured. And after the front processing technology is finished, thinning and slicing the back to manufacture the terahertz Schottky diode.
As a specific implementation manner of the embodiment of the present invention, please refer to fig. 2, the schottky contact metal layer 7 is a multi-layer metal structure, and comprises a Ti metal layer, a Pt metal layer, and an Au metal layer from bottom to top.
As a specific implementation manner of the embodiment of the present invention, referring to fig. 2, the ohmic contact metal layer 3 is a multi-layer metal structure, and comprises a Ni metal layer, an Au metal layer, a Ge metal layer, a Ni metal layer, and an Au metal layer from bottom to top in sequence.
As a specific implementation manner of the embodiment of the invention, please refer to FIG. 2, the heavily doped GaAs layer 2 has a doping concentration of 10^18cm -3 Magnitude.
As a specific implementation manner of the embodiment of the invention, please refer to FIG. 2, the low doped GaAs layer 5 has a doping concentration of 1e16 cm -3 -5e17 cm -3 。
The substrate 1 is a semi-insulating GaAs substrate 1, the metal of the metal thickening layer 4 is Au, and the passivation layer is silicon nitride.
The invention also provides a semiconductor device which comprises the Schottky diode for testing the junction capacitance of the terahertz frequency band.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (8)
1. A terahertz frequency band junction capacitance test method of a Schottky diode is characterized by comprising the following steps: a plurality of Schottky junctions connected in parallel in the same direction;
the diode comprises 7 Schottky junctions which are connected in parallel in the same direction, the total capacitance of the diode device is improved by increasing the number of the Schottky junctions which are connected in parallel, and the accurate junction capacitance of the unijunction diode is obtained by testing the accurate values of the capacitances of a plurality of diodes and then carrying out linear fitting.
2. The method for testing the capacitance of the junction of the schottky diode in the terahertz frequency band according to claim 1, wherein the schottky junction comprises a substrate, a heavily doped GaAs layer and a passivation layer are arranged on the upper surface of the substrate, the passivation layer separates the heavily doped GaAs layer, an isolation region is formed above the passivation layer, two opposite surfaces of the heavily doped GaAs layer are inclined surfaces after separation, and the distance between the two inclined surfaces is gradually increased from bottom to top;
the upper surfaces of the heavily doped GaAs layers, which are close to one side of the passivation layer, are provided with low-doped GaAs layers, the upper surfaces of the low-doped GaAs layers are provided with silicon dioxide layers, one of the low-doped GaAs layers is also provided with a Schottky contact metal layer, and the silicon dioxide layers surround the Schottky contact metal layer;
the upper surfaces of the heavily doped GaAs layers, which are far away from the passivation layer, are provided with ohmic contact metal layers, and the upper surfaces of the ohmic contact metal layers are provided with metal thickening layers; the Schottky contact metal layer is connected with the opposite metal thickening layer through an air bridge.
3. The method for testing the terahertz frequency band junction capacitance of the schottky diode of claim 2, wherein the schottky contact metal layer is a multilayer metal structure and comprises a Ti metal layer, a Pt metal layer and an Au metal layer from bottom to top.
4. The method for testing the junction capacitance of the schottky diode in the terahertz frequency band according to claim 2, wherein the ohmic contact metal layer is a multilayer metal structure and comprises a Ni metal layer, an Au metal layer, a Ge metal layer, a Ni metal layer and an Au metal layer from bottom to top in sequence.
5. The method for testing the junction capacitance of the schottky diode in the terahertz frequency band according to claim 2, wherein the passivation layer is silicon nitride.
6. The terahertz frequency band junction capacitance test method of the schottky diode of claim 2, wherein the metal thickening layer is Au metal.
7. The method for testing the junction capacitance of the Schottky diode in the terahertz frequency band, as claimed in claim 2, wherein the heavily doped GaAs layer has a doping concentration of 10^18cm -3 Magnitude.
8. The terahertz frequency band junction capacitance test method for the schottky diode of claim 2, wherein the doping concentration of the low-doped GaAs layer is 1e16 cm -3 -5e17 cm -3 。
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011085015.4A CN112289791B (en) | 2020-10-12 | 2020-10-12 | Schottky diode and semiconductor device for terahertz frequency band junction capacitance test |
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| CN202011085015.4A CN112289791B (en) | 2020-10-12 | 2020-10-12 | Schottky diode and semiconductor device for terahertz frequency band junction capacitance test |
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| CN112289791B true CN112289791B (en) | 2023-01-17 |
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| CN115051651B (en) * | 2022-08-11 | 2022-11-01 | 壹新信通科技(成都)有限公司 | Terahertz frequency multiplication Schottky diode structure, frequency multiplier and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1407631A (en) * | 2001-08-30 | 2003-04-02 | 三洋电机株式会社 | Shottky barrier diode and its manufacture |
| CN104867968A (en) * | 2015-06-12 | 2015-08-26 | 四川迈格酷科技有限公司 | Terahertz low-frequency GaAs based high-power schottky frequency multiplication diode |
| CN105826401A (en) * | 2016-05-24 | 2016-08-03 | 中国电子科技集团公司第十三研究所 | Terahertz frequency-doubling Schottky diode with air bridges of different sizes |
| CN111048583A (en) * | 2019-12-23 | 2020-04-21 | 电子科技大学 | Planar Schottky diode with multi-finger structure |
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- 2020-10-12 CN CN202011085015.4A patent/CN112289791B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1407631A (en) * | 2001-08-30 | 2003-04-02 | 三洋电机株式会社 | Shottky barrier diode and its manufacture |
| CN104867968A (en) * | 2015-06-12 | 2015-08-26 | 四川迈格酷科技有限公司 | Terahertz low-frequency GaAs based high-power schottky frequency multiplication diode |
| CN105826401A (en) * | 2016-05-24 | 2016-08-03 | 中国电子科技集团公司第十三研究所 | Terahertz frequency-doubling Schottky diode with air bridges of different sizes |
| CN111048583A (en) * | 2019-12-23 | 2020-04-21 | 电子科技大学 | Planar Schottky diode with multi-finger structure |
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