CN209766397U - 瞬态电压抑制元件 - Google Patents
瞬态电压抑制元件 Download PDFInfo
- Publication number
- CN209766397U CN209766397U CN201890000306.9U CN201890000306U CN209766397U CN 209766397 U CN209766397 U CN 209766397U CN 201890000306 U CN201890000306 U CN 201890000306U CN 209766397 U CN209766397 U CN 209766397U
- Authority
- CN
- China
- Prior art keywords
- transient voltage
- voltage suppression
- external connection
- suppression circuit
- connection terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000001052 transient effect Effects 0.000 title claims abstract description 388
- 230000001629 suppression Effects 0.000 title claims abstract description 338
- 239000000758 substrate Substances 0.000 claims description 77
- 239000004065 semiconductor Substances 0.000 claims description 72
- 238000010586 diagram Methods 0.000 description 21
- 230000003071 parasitic effect Effects 0.000 description 17
- 101100202463 Schizophyllum commune SC14 gene Proteins 0.000 description 15
- 238000007747 plating Methods 0.000 description 13
- 239000004020 conductor Substances 0.000 description 10
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910006367 Si—P Inorganic materials 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-007154 | 2018-01-19 | ||
| JP2018007154 | 2018-01-19 | ||
| PCT/JP2018/034132 WO2019142394A1 (fr) | 2018-01-19 | 2018-09-14 | Élément de suppression de tension transitoire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209766397U true CN209766397U (zh) | 2019-12-10 |
Family
ID=67301345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201890000306.9U Active CN209766397U (zh) | 2018-01-19 | 2018-09-14 | 瞬态电压抑制元件 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN209766397U (fr) |
| WO (1) | WO2019142394A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2023058553A1 (fr) * | 2021-10-04 | 2023-04-13 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8981425B2 (en) * | 2013-04-24 | 2015-03-17 | Alpha And Omega Semiconductor Incorporated | Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS) |
| KR101083001B1 (ko) * | 2010-12-23 | 2011-11-14 | 김진형 | 정전기 보호용 반도체 소자 및 그 제조 방법 |
| JP2015126149A (ja) * | 2013-12-27 | 2015-07-06 | パナソニックＩｐマネジメント株式会社 | 低容量半導体装置およびその製造方法 |
| JP2015179776A (ja) * | 2014-03-19 | 2015-10-08 | 株式会社東芝 | 半導体装置 |
-
2018
- 2018-09-14 WO PCT/JP2018/034132 patent/WO2019142394A1/fr active Application Filing
- 2018-09-14 CN CN201890000306.9U patent/CN209766397U/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019142394A1 (fr) | 2019-07-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |