CN205282447U - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN205282447U
CN205282447U CN201490000315.XU CN201490000315U CN205282447U CN 205282447 U CN205282447 U CN 205282447U CN 201490000315 U CN201490000315 U CN 201490000315U CN 205282447 U CN205282447 U CN 205282447U
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semiconductor device
electrode
electric current
outer electrode
function element
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加藤登
中矶俊幸
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Murata Manufacturing Co Ltd
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Abstract

本实用新型提供一种半导体装置。SED保护器件(1)，其具备：Si基板(10)，其形成有ESD保护电路(10A)；焊盘(P1、P2)，其形成于Si基板(10)，并成为ESD保护电路(10A)的输入输出端；树脂层(22)，其形成于Si基板(10)；Ti/Cu/Ti电极(21A、21B)，其形成于树脂层(22)，并与焊盘(P1、P2)导通；外部电极(23A、23B)，其形成于Ti/Cu/Ti电极(21A、21B)的一部分；以及树脂层(26)，其形成在俯视下使外部电极(23A、23B)的比周缘部更靠内侧的一部分露出的开口(26A、26B)。由此，提供避免由于布线电极的氧化或者腐蚀引起的布线电极的电阻值增大的半导体装置。

Description

半导体装置
技术领域
本实用新型涉及在形成有功能元件的半导体基板上具备再布线层的半导体装置。
背景技术
作为一种半导体装置存在ESD(静电放电Electro-Static-Discharge)保护器件。ESD保护器件保护半导体IC等远离静电放电等的浪涌。在以移动体通信终端、数码相机、笔记本电脑为首的各种电子设备中，具备构成逻辑电路或者存储器电路等的半导体集成电路。这种半导体集成电路由于是由形成于半导体基板上的微细布线图案构成的低电压驱动电路，所以一般相对于由于静电放电等引起的浪涌较脆弱。因此，为了保护这种半导体集成电路远离浪涌，而使用ESD保护器件。
在专利文献1中，公开有在构成ESD保护电路的Si基板的表面形成有包含环氧树脂的再布线层的ESD保护器件。在再布线层的树脂层，形成有与Si基板导通的布线电极。该专利文献1是CSP(芯片尺寸封装：ChipSizePackage)型器件，实现了小型化。
专利文献1：国际公开2012/023394号小册子
然而，在专利文献1中，在制造时，有时在再布线层中的布线电极与树脂层之间产生间隙，从而存在水分等杂质从该间隙侵入，布线电极氧化或者腐蚀的担忧。在该情况下，由于该腐蚀，布线电极的电阻值增大，从而存在无法降低静电放电时的钳位电压的问题。
实用新型内容
因此，本实用新型的目的在于提供避免由于布线电极的氧化或者腐蚀引起的布线电极的电阻值增大的半导体装置。
本实用新型的半导体装置焊接安装于基板，所述半导体装置的特征在于，具备：半导体基板，其形成有功能元件；金属膜，其形成于所述半导体基板的所述功能元件形成面，并与所述功能元件连接；绝缘层，其形成于所述半导体基板的所述功能元件形成面；布线电极，其以与所述半导体基板的所述功能元件形成面对置的方式形成于所述绝缘层，并与所述金属膜导通；外部电极，其形成于所述布线电极上的一部分，并焊接于所述基板；以及绝缘树脂层，其形成在俯视下使所述外部电极的比周缘部更靠内侧的一部分露出的开口，所述绝缘树脂层形成于所述绝缘层。
在该结构中，至少在外部电极周缘部与树脂层之间不会产生间隙。假设即便在外部电极的侧面形成有间隙，也通过在外部电极周缘部形成有树脂层(抗蚀剂)，而能够防止水分等杂质从间隙侵入，从而能够防止电极氧化或者腐蚀之类的问题。其结果是，由于能够防止布线电极的电阻值的增加，所以能够避免布线电极处的损失的增大。另外，例如虽有在基板上焊接安装半导体装置时，由于基板的挠曲、或者向基板的冲击等，而向外部电极产生负载，由于该负载，而外部电极的缘部翻起的担忧，但通过利用树脂层覆盖布线电极的周缘部，能够防止该翻起，从而能够进一步避免在外部电极与树脂层之间产生间隙的情况。
优选构成为所述布线电极在除形成有所述外部电极的部分以外的表层具有Ti膜，主要材料为Cu，所述外部电极是针对所述布线电极镀敷形成的膜。
在该结构中，通过形成Ti膜而提高绝缘树脂层与布线电极的接合强度。另外，通过在除形成有外部电极的部分以外的表层具有Ti膜而能够不形成抗蚀剂膜而选择性地镀敷外部电极，因此制造变得容易。
优选所述功能元件是ESD保护电路，所述布线电极是ESD电流的电流路。
在该结构中，由于能够防止作为ESD电流的电流路的布线电极的电阻值的增加，所以能够降低静电放电时的钳位电压。
根据本实用新型，由于在外部电极与树脂层之间不会产生间隙，所以能够防止水分等杂质侵入该间隙，从而能够防止电极氧化或者腐蚀之类的问题。其结果是，由于能够防止布线电极的电阻值的增加，所以能够避免布线电极处的损失的增大。
附图说明
图1是实施方式的ESD保护器件的正面剖视图。
图2是ESD保护器件的各层的俯视图。
图3是表示形成于Si基板的ESD保护电路的平面结构的图。
图4是ESD保护电路的电路图。
图5是实施方式的ESD保护器件1的主要部分剖视图。
图6A是表示实施方式的ESD保护器件的连接例的图。
图6B是表示实施方式的ESD保护器件的连接例的图。
图7是用于对实施方式的ESD保护器件的动作原理进行说明的图。
图8是用于对实施方式的ESD保护器件的动作原理进行说明的图。
图9是表示ESD保护器件的制造工序的图。
图10A是表示使外部电极的一部分露出的开口的其他例子的图。
图10B是表示使外部电极的一部分露出的开口的其他例子的图。
图10C是表示使外部电极的一部分露出的开口的其他例子的图。
具体实施方式
以下，举ESD保护器件为例对本实用新型的半导体装置进行说明。
图1是本实施方式的ESD保护器件1的正面剖视图。图2是ESD保护器件1的各层的俯视图。ESD保护器件1是CSP型器件，在由包括二极管以及齐纳二极管的ESD保护电路10A构成的Si基板10，形成有包括多个树脂层等的再布线层20。Si基板10相当于本实用新型的半导体基板，但本实用新型的半导体基板并不限定于Si基板，也可以是GaAs基板等。
图3是表示形成于Si基板10的ESD保护电路10A的平面结构的图，图4是ESD保护电路10A的电路图。图5是本实施方式的ESD保护器件1的主要部分剖视图。
该ESD保护器件1在p+的Si基板10的表面设置有形成多个元件的元件形成层10L，并从元件形成层10L的表面向半导体基板10内部形成有比元件形成层10L更深的多个元件分离区域110。所述元件分离区域110是在沟槽的内表面形成有氧化Si膜(SiOx)，并在内部填充有多晶硅的沟槽分离部。由元件分离区域110分离的两个元件(夹设元件分离区域110的两个元件)在元件形成层10L的表面具备与半导体基板10的类型(p+)为相反类型的n外延层。由此，在Si基板10的表面以及厚度方向，形成有二极管D1a、D1b、D3a、D3b、D2、D4以及齐纳二极管。而且，在Si基板10的表层设置有Al电极10B、Al焊盘(以下，称为焊盘。)P1、P2，所述各元件形成图4所示的电路。应予说明，在图4中将二极管D1a、D1b表示为一个二极管D1，将二极管D3a、D3b表示为一个二极管D3。
所形成的二极管D1、D2以正反方向一致的方式串联连接，二极管D3、D4以正反方向一致的方式串联连接。另外，串联连接的二极管D1、D2以及二极管D3、D4分别以正反方向一致的方式相对于齐纳二极管Dz并联连接。并且，在二极管D1、D4的形成位置之间以及二极管D2、D3的形成位置之间夹设有齐纳二极管Dz。所形成的二极管D1a、D1b与二极管D2的连接点成为ESD保护电路10A的第1输入输出端，并与形成于Si基板10的焊盘P1连接。另外，所形成的二极管D3a、D3b与二极管D4的连接点成为ESD保护电路10A的第2输入输出端，并与形成于Si基板10的Al焊盘(以下，称为焊盘。)P2连接。焊盘P1、P2相当于本实用新型的金属膜。
形成于Si基板10的表层的再布线层20包括：以覆盖焊盘P1、P2的周缘部的一部分的方式形成于Si基板10的表面(功能元件形成面)的SiN(或者SiO2)保护膜21；和覆盖SiN保护膜21以及焊盘P1、P2的树脂层22。SiN保护膜21通过溅镀而形成，树脂层22通过环氧类(或者聚酰亚胺系)阻焊膜的旋涂而形成。在树脂层22形成有使焊盘P1、P2的一部分露出的开口(接触孔)22A、22B(参照图2)。
在该开口22A、22B以及该开口22A、22B的周缘区域形成有Ti/Cu/Ti电极21A、21B。在图1中仅图示了Ti/Cu/Ti电极21B，但Ti/Cu/Ti电极21B通过从树脂层22侧按顺序层叠Ti电极211、Cu电极212、Ti电极213而形成。此外，Ti/Cu/Ti电极21A也为相同的构造。Ti/Cu/Ti电极21A、21B具有与Si基板10的表面对置的平面部分，并且通过树脂层22的开口与焊盘P1、P2导通。Ti/Cu/Ti电极21A、21B是ESD保护器件1的浪涌电流(ESD电流)的电流路径。
在Ti/Cu/Ti电极21A、21B的平面部分的一部分形成有外部电极23A、23B。在图1中仅图示了外部电极23B，但外部电极23B在Ti/Cu/Ti电极21B侧形成有Ni电极231，在该Ni电极231的表面形成有Au电极232。外部电极23A也为相同的构造。在形成有外部电极23A、23B的Ti/Cu/Ti电极21A、21B的部分，蚀刻Ti电极213而使Cu电极212露出，外部电极23A、23B选择性地镀敷于所露出的Cu电极212部分。该外部电极23A、23B是ESD保护器件1的输入输出端子用电极。
再布线层20包括进一步形成于树脂层22的树脂层26。树脂层26例如是低介电常数的环氧树脂(或者聚酰亚胺树脂、液晶聚合物等)的层。此外，由于Ti/Cu/Ti电极21A、21B在表层具有Ti电极213，所以Ti/Cu/Ti电极21A、21B与树脂层26的接合强度较高。在该树脂层26形成有开口(通孔)26A、26B。开口26A、26B使外部电极23A、23B的一部分露出。在图2的表示树脂层26的图中，用虚线表示外部电极23A、23B，并示出了其与开口26A、26B的关系。如图所示，外部电极23A、23B的周缘部由树脂层26覆盖，相比其周缘部更靠内侧的部位从开口26A、26B露出。
利用树脂层26覆盖外部电极23A、23B的周缘部，从而树脂层26的开口26A、26B至Ti/Cu/Ti电极21A、21B以及外部电极23A、23B的接合部的距离变长。因此，从开口26A、26B侵入的水分等杂质不容易侵入至其接合部分，从而能够防止Ti/Cu/Ti电极21A、21B的露出的Cu部分的腐蚀。
另外，例如在基板上焊接安装ESD保护器件1时，由于供安装的基板的挠曲、或者向该基板的冲击等，而向外部电极23A、23B产生负载，由于该负载，而存在外部电极23A、23B的缘部翻起的担忧。因此，利用树脂层26覆盖外部电极23A、23B的周缘部，从而能够防止外部电极23A、23B的缘部的翻起，能够进一步避免杂质的侵入。另外，即便由于外部电极23A、23B与树脂层26的热膨胀系数的不同而在界面产生间隙，也由于利用树脂层覆盖外部电极23A、23B的周缘部，所以能够避免水分等杂质的浸入。
此外，在本实施方式中，示出了在Si基板10形成齐纳二极管Dz等，而构成ESD保护电路10A的例子，但例如也可以将可变电容元件等形成于Si基板10，而构成使用了该Si基板10的电路。
以下，对本实施方式的ESD保护器件的连接例以及动作原理进行说明。
图6A以及图6B是表示本实施方式的ESD保护器件1的连接例的图。ESD保护器件1搭载于电子设备。作为电子设备的例子，举出有笔记本电脑、平板型终端装置、移动电话机、数码相机、DVC(数字视频盒：DigitalVideoCassette)、以及便携式音乐播放器等。
在图6A中，示出了在将I/O端口100与应保护的IC101连接的信号线、与GND之间连接有ESD保护器件1的例子。I/O端口100例如是供天线连接的端口。本实施方式的ESD保护器件1可以为双向型，第1输入输出端以及第2输入输出端的任意一个均可以为输入侧。例如在将第1输入输出端作为输入侧的情况下，信号线与第1输入输出端连接，第2输入输出端与GND连接。
若从信号线向ESD保护器件1施加超过齐纳二极管Dz的齐纳电压的浪涌电压，则浪涌电流从ESD保护器件1向地面放电。ESD保护器件1如上所述地防止露出的Cu的腐蚀。假设在由于杂质的侵入引起Cu腐蚀的情况下，图6A的虚线所示的ESD保护器件1的电流路径的电阻值增大。在该情况下，由于该电阻而使浪涌电流不向地面放电，ESD保护器件1无法正常发挥功能。在本实施方式中，由于防止Cu的腐蚀，所以能够防止图6A的虚线所示的电阻值的增大，从而能够降低ESD产生时的钳位电压，进而能够使ESD保护器件1正常发挥功能。
在图6B中，示出了在将连接器102与IC101连接的信号线、与GND线之间连接有ESD保护器件1的例子。该例子的信号线例如是高速传输线路(差动传输线路)，并在多个信号线各自、与GND线之间连接有ESD保护器件1。
图7以及图8是用于对本实施方式的ESD保护器件1的动作原理进行说明的图。ESD保护器件1将外部电极23A、23B作为第1输入输出端以及第2输入输出端，并连接于信号线与GND线之间。该信号线是与应保护远离静电放电的电压的IC(未图示)的输入输出端子连结的线。本实施方式的ESD保护器件可以为双向型，第1输入输出端以及第2输入输出端的任意一个均可以为输入侧。例如在将第1输入输出端作为输入侧的情况下，信号线与第1输入输出端连接，第2输入输出端与GND线连接。
图7是用于对电流从与第1输入输出端(外部电极23A)连结的焊盘P1向与第2输入输出端(外部电极23B)连结的焊盘P2流动的情况进行说明的图。若被施加超过齐纳二极管Dz的齐纳电压的浪涌电压，则如图中虚线所示，从第1输入端进入的浪涌电流从焊盘P1流入二极管D1、齐纳二极管Dz以及二极管D4的路径，并从焊盘P2向地面放电。
图8是用于对电流从与第2输入输出端(外部电极23B)连结的焊盘P2向与第1输入输出端(外部电极23A)连结的焊盘P1流动的情况进行说明的图。在该情况下，如图中虚线所示，从第2输入端进入的浪涌电流从焊盘P2流入二极管D3、齐纳二极管Dz以及二极管D2的路径，并从焊盘P1向地面放电。
以下，对ESD保护器件1的制造工序进行说明。图9是表示ESD保护器件1的制造工序的图。通过以下工序来制造ESD保护器件1。
(A)首先，通过光刻法在形成有ESD保护电路10A的Si基板10形成与ESD保护电路10A导通的焊盘P1、P2。另外，在基板表面溅镀SiN保护膜21，并通过蚀刻形成开口H1、H2。
其中，通过减小焊盘P1、P2的面积，能够减小形成于其与所对置的基板(ESD保护电路10A)之间的寄生电容。通过减小该寄生电容，能够抑制阻抗的偏差，其结果是，能够降低信号线中的高频信号的损失。
(B)接下来，通过环氧类阻焊膜的旋涂在Si基板10形成树脂层22，之后，形成开口22A、22B。
(C)，如图1所说明那样，通过溅镀在树脂层22的表面以约0.1μm/1.0μm/0.1μm的厚度成膜Ti电极211、Cu电极212、Ti电极213后，进行湿式蚀刻，而形成电极21A、21B。
(D)对Ti/Cu/Ti电极21A、21B的表面的一部分进行蚀刻，使Cu露出，并如图1所说明那样，通过电解镀(电镀)在该露出的Cu部分以约0.1μm/3.0μm的厚度成膜在Ni电极231的表面形成有Au电极232的Au/Ni的外部电极23A、23B。该外部电极23A、23B仅选择性地镀敷于露出的Cu表面。由于通过选择性地镀敷成膜外部电极23A、23B，所以不形成抗蚀剂膜，并且无需掩蔽，因此制造变得容易。
(E)之后，通过环氧类阻焊膜的旋涂在树脂层22的表面形成树脂层26。在该树脂层26形成开口26A、26B。此时，外部电极23A、23B的周缘部由树脂层26覆盖，该周缘部的内侧从开口26A、26B露出。
这样，在通过电镀制膜外部电极23A、23B后，形成树脂层26，从而能够避免镀液剩余，Ti/Cu/Ti电极21A、21B腐蚀的担忧。通过避免腐蚀，能够通过ESD保护防止成为器件1的浪涌电流的路径的Ti/Cu/Ti电极21A、21B的电阻值的增大。
应予说明，形成于使外部电极23A、23B的一部分露出的树脂层26的开口26A、26B的形状能够适当地变更。图10A、图10B以及图10C是表示使外部电极23A、23B的一部分露出的开口26A、26B的其他例子的图。如图10A所示，也可以将开口26A、26B的角部形成为曲状，以便保护容易产生裂缝的部位(角部)。另外，如图10B所示，也可以形成为仅使开口26A的中央部向内侧突出的形状。在该情况下，例如，通过将开口26A、26B分别形成为不同形状，能够容易识别ESD保护元件1的方向。并且，如图10C所示，也可以将开口26A、26B分别分割(细化)为两个。在该情况下，虽由于安装ESD保护元件1时的焊料量的不同，而存在倾斜安装ESD保护元件1的情况，但通过细化开口26A、26B，能够抑制其倾斜。
附图标记说明：1…ESD保护器件；10…Si基板；10A…ESD保护电路；20…再布线层；21…SiN保护膜；21A、21B…Ti/Cu/Ti电极；22…树脂层；22A、22B…开口；23A、23B…外部电极；26…树脂层；26A、26B…开口；D1、D2、D3、D4…二极管(功能元件)；Dz…齐纳二极管(功能元件)；P1、P2…焊盘(金属膜)。

Claims (33)

1.一种半导体装置，其焊接安装于基板，所述半导体装置的特征在于，具备：
半导体基板，其形成有功能元件；
金属膜，其形成于所述半导体基板的所述功能元件形成面，并与所述功能元件连接；
绝缘层，其形成于所述半导体基板的所述功能元件形成面；
布线电极，其以与所述半导体基板的所述功能元件形成面对置的方式形成于所述绝缘层，并与所述金属膜导通；
外部电极，其形成于所述布线电极上的一部分，并焊接于所述基板；以及
绝缘树脂层，其形成在俯视下使所述外部电极的比周缘部更靠内侧的一部分露出的开口，所述绝缘树脂层形成于所述绝缘层。
2.根据权利要求1所述的半导体装置，其特征在于，
所述布线电极在由Cu构成的主要材料的表面具有Ti膜，
所述外部电极与所述主要材料从所述Ti膜露出的部分接触。
3.根据权利要求2所述的半导体装置，其特征在于，
所述外部电极由形成于所述布线电极侧的Ni电极、和形成于该Ni电极的表面的Au电极构成。
4.根据权利要求3所述的半导体装置，其特征在于，
所述外部电极是针对所述布线电极镀敷形成的膜。
5.根据权利要求1～3中任一项所述的半导体装置，其特征在于，
在俯视下所述开口的角部形成为曲状。
6.根据权利要求1～4中任一项所述的半导体装置，其特征在于，
所述半导体装置具有多个所述外部电极，各外部电极中的所述开口分别具有不同形状。
7.根据权利要求1～4中任一项所述的半导体装置，其特征在于，
所述绝缘树脂层形成为在俯视下分割所述外部电极。
8.根据权利要求5所述的半导体装置，其特征在于，
所述绝缘树脂层形成为在俯视下分割所述外部电极。
9.根据权利要求1～4中任一项所述的半导体装置，其特征在于，
所述绝缘树脂层为环氧树脂、聚酰亚胺树脂或者液晶聚合物。
10.根据权利要求5所述的半导体装置，其特征在于，
所述绝缘树脂层为环氧树脂、聚酰亚胺树脂或者液晶聚合物。
11.根据权利要求6所述的半导体装置，其特征在于，
所述绝缘树脂层为环氧树脂、聚酰亚胺树脂或者液晶聚合物。
12.根据权利要求7所述的半导体装置，其特征在于，
所述绝缘树脂层为环氧树脂、聚酰亚胺树脂或者液晶聚合物。
13.根据权利要求8所述的半导体装置，其特征在于，
所述绝缘树脂层为环氧树脂、聚酰亚胺树脂或者液晶聚合物。
14.根据权利要求1～4中任一项所述的半导体装置，其特征在于，
所述功能元件是ESD保护电路，所述布线电极是ESD电流的电流路。
15.根据权利要求5所述的半导体装置，其特征在于，
所述功能元件是ESD保护电路，所述布线电极是ESD电流的电流路。
16.根据权利要求6所述的半导体装置，其特征在于，
所述功能元件是ESD保护电路，所述布线电极是ESD电流的电流路。
17.根据权利要求7所述的半导体装置，其特征在于，
所述功能元件是ESD保护电路，所述布线电极是ESD电流的电流路。
18.根据权利要求8所述的半导体装置，其特征在于，
所述功能元件是ESD保护电路，所述布线电极是ESD电流的电流路。
19.根据权利要求9所述的半导体装置，其特征在于，
所述功能元件是ESD保护电路，所述布线电极是ESD电流的电流路。
20.根据权利要求10所述的半导体装置，其特征在于，
所述功能元件是ESD保护电路，所述布线电极是ESD电流的电流路。
21.根据权利要求11所述的半导体装置，其特征在于，
所述功能元件是ESD保护电路，所述布线电极是ESD电流的电流路。
22.根据权利要求12所述的半导体装置，其特征在于，
所述功能元件是ESD保护电路，所述布线电极是ESD电流的电流路。
23.根据权利要求13所述的半导体装置，其特征在于，
所述功能元件是ESD保护电路，所述布线电极是ESD电流的电流路。
24.根据权利要求14所述的半导体装置，其特征在于，
所述半导体装置具有两个所述外部电极，各所述外部电极在俯视下分别沿所述半导体基板的对置的一对边而设置。
25.根据权利要求15所述的半导体装置，其特征在于，
所述半导体装置具有两个所述外部电极，各所述外部电极在俯视下分别沿所述半导体基板的对置的一对边而设置。
26.根据权利要求16所述的半导体装置，其特征在于，
所述半导体装置具有两个所述外部电极，各所述外部电极在俯视下分别沿所述半导体基板的对置的一对边而设置。
27.根据权利要求17所述的半导体装置，其特征在于，
所述半导体装置具有两个所述外部电极，各所述外部电极在俯视下分别沿所述半导体基板的对置的一对边而设置。
28.根据权利要求18所述的半导体装置，其特征在于，
所述半导体装置具有两个所述外部电极，各所述外部电极在俯视下分别沿所述半导体基板的对置的一对边而设置。
29.根据权利要求19所述的半导体装置，其特征在于，
所述半导体装置具有两个所述外部电极，各所述外部电极在俯视下分别沿所述半导体基板的对置的一对边而设置。
30.根据权利要求20所述的半导体装置，其特征在于，
所述半导体装置具有两个所述外部电极，各所述外部电极在俯视下分别沿所述半导体基板的对置的一对边而设置。
31.根据权利要求21所述的半导体装置，其特征在于，
所述半导体装置具有两个所述外部电极，各所述外部电极在俯视下分别沿所述半导体基板的对置的一对边而设置。
32.根据权利要求22所述的半导体装置，其特征在于，
所述半导体装置具有两个所述外部电极，各所述外部电极在俯视下分别沿所述半导体基板的对置的一对边而设置。
33.根据权利要求23所述的半导体装置，其特征在于，
所述半导体装置具有两个所述外部电极，各所述外部电极在俯视下分别沿所述半导体基板的对置的一对边而设置。
CN201490000315.XU 2013-05-31 2014-04-09 半导体装置 Expired - Lifetime CN205282447U (zh)

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