CN209729942U - A kind of UV LED chips - Google Patents
A kind of UV LED chips Download PDFInfo
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- CN209729942U CN209729942U CN201920663703.0U CN201920663703U CN209729942U CN 209729942 U CN209729942 U CN 209729942U CN 201920663703 U CN201920663703 U CN 201920663703U CN 209729942 U CN209729942 U CN 209729942U
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Abstract
The utility model discloses a kind of UV LED chips, including substrate layer and successively from the aluminum nitride buffer layer of the surface of substrate layer superposition growth, n type gallium nitride aluminium layer, multiple quantum well active layer and p-type aluminum gallium nitride layer, several pass through p-type aluminum gallium nitride layer, multiple quantum well active layer is until the upper end of chip is divided into several p-type isolated islands by the separation hole of n type gallium nitride aluminium layer, the first N electrode is vapor-deposited on the surface of n type gallium nitride aluminium layer, the first P electrode is vapor-deposited on the surface of p-type isolated island, the surface of chip is provided with insulating layer, the surface of insulating layer is provided with the second N electrode and the second P electrode, second N electrode and the second P electrode pass through N electrode aperture and P electrode aperture and the first N electrode and the second P electrode connection respectively.The single light emitting region of chip is divided into multiple equivalent strips to run through the region of type distribution by the utility model, is reduced chip voltage, and can meet more large driven current density, is effectively increased the optical power of chip.
Description
Technical field
The utility model relates to technical field of semiconductor illumination, in particular to a kind of UV LED chips.
Background technique
Deep-UV light-emitting diode chip is a kind of solid semiconductor that can convert electrical energy into deep ultraviolet band light
Device is the deep ultraviolet light source of new generation of current optimal prospect, i.e., will be widely used in daily life.Existing depth
UV LED chips generally will increase the area of chip, improve Injection Current to improve light emission luminance.But it is deep at present
UV materials light efficiency is less than 5%, if chip layout design is slightly uneven, such light-emitting diode chip for backlight unit will generate electricity
The clustering effect of stream, to reduce its luminous efficiency and reliability.
Thus the prior art could be improved and improve.
Utility model content
Place in view of above-mentioned deficiencies of the prior art, the purpose of this utility model is to provide a kind of UV LEDs
Chip, the luminous efficiency to solve the problems, such as UV LED chips in the prior art is not high, also can avoid generating electric current
Clustering effect.
In order to achieve the above object, the utility model takes following technical scheme:
A kind of UV LED chips, including substrate layer and successively from the nitridation of the surface of substrate layer superposition growth
Aluminium buffer layer, n type gallium nitride aluminium layer, multiple quantum well active layer and p-type aluminum gallium nitride layer, the upper table of the n type gallium nitride aluminium layer
Face edge exposure is equidistantly provided with several across the p-type aluminum gallium nitride layer, multiple quantum well active layer until institute on chip
The separation hole of n type gallium nitride aluminium layer is stated, the upper end of the chip is divided into several and is equally spaced by several described separation holes
Strip run through type p-type isolated island, separate and be vapor-deposited with the first N electrode on the surface of n type gallium nitride aluminium layer described in hole, the p-type is lonely
The first P electrode is vapor-deposited on the surface on island, the surface of the chip is provided with insulating layer, offered on the insulating layer respectively with
First N electrode and the corresponding N electrode aperture of the first P electrode and P electrode aperture, the surface of the insulating layer are provided with the 2nd N electricity
Pole and the second P electrode, second N electrode pass through P electricity by N electrode aperture and the first N electrode connection, second P electrode
Pole aperture and the first P electrode connection.
Preferably, in the UV LED chips, the shape of the p-type isolated island is strip, strip p-type
The length of isolated island is 100 μm -2000 μm, and the width of strip p-type isolated island is 20 μm -150 μm.
Preferably, in the UV LED chips, the p-type isolated island is equidistantly distributed on chip side by side, phase
The distance between two adjacent p-type isolated islands are at least 30 μm.
Preferably, in the UV LED chips, first N electrode is metal contact layer, the first P
Electrode is transparency conducting layer or metal contact layer.
Preferably, in the UV LED chips, the surrounding of the p-type isolated island is provided with by the first N
For electrode retaining collar around the light shield of encirclement, the line width of the light shield is 2 μm -10 μm.
Preferably, in the UV LED chips, the edge of the chip is provided through the p-type
Aluminum gallium nitride layer, multiple quantum wells active layer, n type gallium nitride aluminium layer until the aluminum nitride buffer layer spill isolation channel, it is described absolutely
Edge layer fills the bottom surface and side of the spill isolation channel, and the spill isolation channel is wherein provided with wave crest shape mark on one side.
Preferably, in the UV LED chips, second N electrode is N-type pad, the 2nd P electricity
Extremely p-type pad, the N-type pad and p-type pad are symmetrical, and the spacing of the N type pad and p-type pad is at least 80 μ
M, the p-type pad and N pad thickness are 1 μm~7 μm.
Preferably, in the UV LED chips, the quantity of the p-type isolated island is at least 2.
Compared to the prior art, UV LED chips provided by the utility model, including substrate layer and successively
From aluminum nitride buffer layer, n type gallium nitride aluminium layer, multiple quantum well active layer and the p-type gallium nitride of the superposition growth of the surface of substrate layer
The top surface edge of aluminium layer, the n type gallium nitride aluminium layer is exposed, several are equidistantly provided on chip across the p-type nitrogen
Change gallium aluminium layer, multiple quantum well active layer until the n type gallium nitride aluminium layer separation hole, several described separation holes are by the core
The upper end of piece is divided into the strip that several are equally spaced and is deposited on type p-type isolated island, the surface of the n type gallium nitride aluminium layer
There is the first N electrode, the first P electrode is vapor-deposited on the surface of the p-type isolated island, the surface of the chip is provided with insulating layer, institute
It states and offers N electrode aperture corresponding with the first N electrode and the first P electrode and P electrode aperture respectively, the insulation on insulating layer
The surface of layer is provided with the second N electrode and the second P electrode, and second N electrode is joined by N electrode aperture and the first N electrode
Logical, second P electrode passes through P electrode aperture and the first P electrode connection.The utility model divides the single light emitting region of chip
The regions that multiple equivalent strips run through type distribution are cut into, are conducive to that chip light emitting heat production is uniform, in addition the metallic area of big accounting
Design effectively raises current expansion and heat export capacity, reduces chip voltage, enhances the use reliability of chip；And
And more large driven current density can be met, effectively increase the optical power of chip.Furthermore the utility model and existing same scale chips phase
Heat export capacity more uniform than current expansion is strong, and effectively prevents the clustering effect of electric current, compared to resistance to scale chips at present
Carrying current ability is up to 40%.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the epitaxial layer of UV LED chips provided by the utility model.
Fig. 2 is the first schematic diagram that UV LED chips provided by the utility model form p-type isolated island.
Fig. 3 is the second schematic diagram that UV LED chips provided by the utility model form p-type isolated island.
Fig. 4 is the first schematic diagram that UV LED chips provided by the utility model form concave isolation channel.
Fig. 5 is the second schematic diagram that UV LED chips provided by the utility model form concave isolation channel.
Fig. 6 is the first schematic diagram that UV LED chips provided by the utility model form the first N electrode.
Fig. 7 is the second schematic diagram that UV LED chips provided by the utility model form the first N electrode.
Fig. 8 is the first schematic diagram that UV LED chips provided by the utility model form the first P electrode.
Fig. 9 is the second schematic diagram that UV LED chips provided by the utility model form the first P electrode.
Figure 10 is the structural schematic diagram that UV LED chips provided by the utility model form insulating layer.
Figure 11 is that the UV LED chips that utility model provides form the first of N electrode aperture and P electrode aperture
Schematic diagram.
Figure 12 is that the UV LED chips that utility model provides form the second of N electrode aperture and P electrode aperture
Schematic diagram.
Figure 13 is that the UV LED chips that provide of utility model form the of the second N electrode and the second P electrode
One schematic diagram.
Figure 14 is that the UV LED chips that provide of utility model form the of the second N electrode and the second P electrode
Two schematic diagrames.
Figure label explanation:
100, substrate layer, 200, aluminum nitride buffer layer, 201, spill isolation channel, 300, n type gallium nitride aluminium layer, 301, separation
Hole, the 302, first N electrode, 303, N electrode aperture, the 304, second N electrode, 400, multiple quantum well active layer, 500, p-type gallium nitride
Aluminium layer, 501, p-type isolated island, the 502, first P electrode, 503, P electrode aperture, the 504, second P electrode, 600, insulating layer.
Specific embodiment
The utility model provides a kind of UV LED chips, for make the purpose of this utility model, technical solution and
Effect is clearer, clear, and the utility model is further described as follows in conjunction with drawings and embodiments.It should be appreciated that
Specific embodiment described herein only to explain the utility model, is not used to limit the utility model.
It should be noted that it can when component is referred to as on " being installed in ", " being fixed on " or " being set to " another component
Directly on the other part or may be simultaneously present component placed in the middle.When a component be known as " being connected to " another
Component, it can be directly to another component or may be simultaneously present component placed in the middle.
It is only relative concept each other it should also be noted that, the positional terms such as left and right, upper and lower in the embodiment of the present invention
It or is to refer to, and should not be regarded as restrictive with the normal operating condition of product.
Also referring to Fig. 1 to Figure 14, UV LED chips provided by the utility model, including substrate layer 100
And successively from aluminum nitride buffer layer 200, the n type gallium nitride aluminium layer 300, multiple quantum wells of the superposition growth of the surface of substrate layer 100
The top surface edge of active layer 400 and p-type aluminum gallium nitride layer 500, the N type aluminum gallium nitride layer 300 is exposed, on chip etc.
The p-type aluminum gallium nitride layer 500, multiple quantum well active layer 400 are passed through until the n type gallium nitride aluminium layer away from several are provided with
The upper end of the chip is divided into several strips being equally spaced by 300 separation hole 301, several described separation holes 301
Through type p-type isolated island 501, the first N electrode 302, the p-type isolated island are vapor-deposited on the surface of the n type gallium nitride aluminium layer 300
The first P electrode 502 is vapor-deposited on 501 surface, the surface of the chip is provided with insulating layer 600, opens on the insulating layer 600
Equipped with N-type aperture 303 corresponding with the first N electrode 302 and the first P electrode 502 and p-type aperture 503 respectively, the insulating layer
600 surface is provided with the second N electrode 304 and the second P electrode 504, and second N electrode 304 passes through N-type aperture 303 and the
One N electrode, 302 connection, second P electrode 504 pass through 503 connection of p-type aperture 503 and the second P electrode.
In other words, the single light emitting region of chip is divided into multiple by the utility model by setting p-type isolated island 501
The light emitting region of equivalent strip penetrability distribution, being equivalent to chip separation is that multiple strips being uniformly equidistantly distributed side by side pass through
The type of wearing chip, each sub- chip is parallel with one another, the epitaxial structure of sub- chip be followed successively by from top to bottom p-type aluminum gallium nitride layer 500,
The upper epidermis of multiple quantum well active layer 400, n type gallium nitride aluminium layer 300, and simultaneously common core is uniformly equidistantly distributed on chip side by side
First N electrode of on piece, each sub- chip have independent first P electrode, can individually carry out luminous, and the hair of each sub- chip
Light region shape and area are all the same, so that the electric current uniform expansion in UV LED chips, avoids electric current
Clustering effect can further submit current expansion and heat export capacity further, since the accounting of metallic area increases, drop
Low chip voltage enhances the use reliability of chip, can meet more large driven current density, effectively increases UV LED core
The optical power of piece.
Preferably, the substrate layer 100 is Sapphire Substrate layer, has performance stabilization, high temperature resistant, high mechanical strength, easy
The advantages of cleaning；The material of the insulating layer 600 is SiO2 or SiNx；The quantity of the p-type isolated island 501 is at least 2, with
Guarantee the current expansion ability of chip.
Furthermore, it is understood that the shape of the p-type isolated island 501 is strip, strip p-type please continue to refer to Fig. 1 to Figure 14
The length of isolated island 501 is 100 μm -2000 μm, and the width of strip p-type isolated island 501 is 20 μm -150 μm, in the specific implementation,
The length and width of the strip p-type isolated island 501 can be set according to actual needs, in the present embodiment, strip p-type isolated island
501 length is 500 μm, and width is 50 μm, can reach preferable current expansion effect, in addition, strip p-type isolated island 501
Quadrangle can be right angle or arc chord angle.
Furthermore, it is understood that the p-type isolated island 501 is equidistantly distributed on chip side by side, energy please continue to refer to Fig. 1 to Figure 14
Enough guarantee the uniform expansion of electric current on chip, to improve the luminous and heat dissipation performance of chip, reduces the voltage on chip, improve
The use reliability of chip, the distance between two adjacent p-type isolated islands 501 are at least 30 μm, when it is implemented, can be according to reality
Border demand sets the distance between p-type isolated island 501, and in the present embodiment, the distance between two adjacent p-type isolated islands 501 are 40 μ
m。
Preferably, first N electrode 302 is metal contact layer, and material includes titanium or aluminium or albronze or chromium etc.,
First P electrode 502 is transparency conducting layer or metal contact layer, and material includes indium oxide tin or nickel or rhodium etc., on chip
Sub- chip circuit connection mode be parallel connection, i.e., each first P electrode 502 share the first N electrode 302.
Further, the surrounding of the p-type isolated island 501 is provided with the light shield by first N electrode 302 around encirclement,
The line width of the light shield is 2 μm -10 μm, and in the present embodiment, the line width of the light shield is 3 μm, and the luminous effect of chip can be enhanced
Fruit.
Furthermore, it is understood that the edge of the chip is provided through the P type aluminum gallium nitride please continue to refer to Fig. 4
Layer 500, multiple quantum wells active layer 400, n type gallium nitride aluminium layer 300 until the aluminum nitride buffer layer 200 spill isolation channel 201,
The insulating layer 600 fills the bottom surface and side of the spill isolation channel 201, so that the surface of the chip is insulated completely
Insulation blocking plays mark action in addition, the spill isolation channel 201 is wherein provided with wave crest shape mark on one side, described recessed
The quadrangle of shape isolation channel 201 is arc chord angle, and the diameter of circular arc is greater than 5 μm.
Furthermore, it is understood that second N electrode 304 is N-type pad, second P electrode 504 please continue to refer to Figure 13
For p-type pad, the N-type pad and p-type pad are symmetrical, and the spacing of the N-type pad and p-type pad is at least 80 μm,
The p-type pad and N pad thickness are 1 μm~7 μm, wherein bonding pad material include titanium or aluminium or copper or gold or platinum or nickel or
Tin or gold-tin alloy etc..
In conclusion UV LED chips provided by the utility model, including substrate layer and successively from substrate
Aluminum nitride buffer layer, n type gallium nitride aluminium layer, multiple quantum well active layer and the p-type aluminum gallium nitride layer of the surface superposition growth of layer, institute
The top surface edge for stating n type gallium nitride aluminium layer is exposed, several are equidistantly provided on chip across the p-type aluminum gallium nitride
Layer, multiple quantum well active layer until the n type gallium nitride aluminium layer separation hole, several described separation holes are by the upper of the chip
End is divided into the strip that several are equally spaced and is vapor-deposited with first on type p-type isolated island, the surface of the n type gallium nitride aluminium layer
N electrode is vapor-deposited with the first P electrode on the surface of the p-type isolated island, and the surface of the chip is provided with insulating layer, the insulation
N electrode aperture corresponding with the first N electrode and the first P electrode and P electrode aperture respectively, the table of the insulating layer are offered on layer
Face is provided with the second N electrode and the second P electrode, and second N electrode is by N electrode aperture and the first N electrode connection, and described the
Two P electrodes pass through P electrode aperture and the first P electrode connection.The single light emitting region of chip is divided into multiple by the utility model
Equivalent strip runs through the region of type distribution, is conducive to that chip light emitting heat production is uniform, in addition the metallic area design of big accounting is effective
Improve current expansion and heat export capacity, reduce chip voltage, enhance the use reliability of chip；And it can meet
More large driven current density effectively increases the optical power of chip.Furthermore the utility model expands with the existing electric current compared with scale chips
The uniform heat export capacity of Zhan Jun is strong, and effectively prevents the clustering effect of electric current, compared at present with the resistance to carrying current of scale chips
Ability is up to 40%.
It is understood that for those of ordinary skills, can with technical solution according to the present utility model and
The design of its utility model is subject to equivalent substitution or change, and all these changes or replacement all should belong to appended by the utility model
Scope of protection of the claims.
Claims (8)
1. a kind of UV LED chips, which is characterized in that be superimposed including substrate layer and successively from the surface of substrate layer
Aluminum nitride buffer layer, n type gallium nitride aluminium layer, multiple quantum well active layer and the p-type aluminum gallium nitride layer of growth, the n type gallium nitride
The top surface edge of aluminium layer is exposed, several are equidistantly provided on chip has across the p-type aluminum gallium nitride layer, multiple quantum wells
Up to the separation hole of the n type gallium nitride aluminium layer, the upper end of the chip is divided into several active layer by several described separation holes
A strip being equally spaced runs through type p-type isolated island, is vapor-deposited with the first N electrode, the P on the surface of the n type gallium nitride aluminium layer
The first P electrode is vapor-deposited on the surface of type isolated island, the surface of the chip is provided with insulating layer, offers on the insulating layer point
N electrode aperture not corresponding with the first N electrode and the first P electrode and P electrode aperture, the surface of the insulating layer are provided with second
N electrode and the second P electrode, second N electrode pass through P by N electrode aperture and the first N electrode connection, second P electrode
Electrode and the first P electrode connection.
2. UV LED chips according to claim 1, which is characterized in that the shape of the p-type isolated island is length
Bar shaped, the length of strip p-type isolated island are 100 μm -2000 μm, and the width of strip p-type isolated island is 20 μm -150 μm.
3. UV LED chips according to claim 2, which is characterized in that the p-type isolated island equidistantly divides side by side
For cloth on chip, the distance between two adjacent p-type isolated islands are at least 30 μm.
4. UV LED chips according to claim 1, which is characterized in that first N electrode connects for metal
Contact layer, first P electrode are transparency conducting layer or metal contact layer.
5. UV LED chips according to claim 1, which is characterized in that the surrounding of the p-type isolated island is arranged
Have by first N electrode around the light shield surrounded, the line width of the light shield is 2 μm -10 μm.
6. UV LED chips according to claim 1, which is characterized in that the edge of the chip is arranged
Have across the p-type aluminum gallium nitride layer, multiple quantum wells active layer, n type gallium nitride aluminium layer until the aluminum nitride buffer layer spill
Isolation channel, the insulating layer fill the bottom surface and side of the spill isolation channel, and the spill isolation channel is wherein arranged on one side
There is wave crest shape mark.
7. UV LED chips according to claim 1, which is characterized in that second N electrode is N-type weldering
Disk, second P electrode are p-type pad, and the N-type pad and p-type pad are symmetrical, the N-type pad and p-type pad
Spacing is at least 80 μm, and the p-type pad and N pad thickness are 1 μm~7 μm.
8. UV LED chips according to claim 1, which is characterized in that the quantity of the p-type isolated island is at least
It is 2.
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| CN201920663703.0U CN209729942U (en) | 2019-05-09 | 2019-05-09 | A kind of UV LED chips |
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| CN201920663703.0U CN209729942U (en) | 2019-05-09 | 2019-05-09 | A kind of UV LED chips |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116825924A (en) * | 2023-08-24 | 2023-09-29 | 山西中科潞安紫外光电科技有限公司 | Deep ultraviolet LED flip chip and preparation method thereof |
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2019
- 2019-05-09 CN CN201920663703.0U patent/CN209729942U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116825924A (en) * | 2023-08-24 | 2023-09-29 | 山西中科潞安紫外光电科技有限公司 | Deep ultraviolet LED flip chip and preparation method thereof |
| CN116825924B (en) * | 2023-08-24 | 2023-12-19 | 山西中科潞安紫外光电科技有限公司 | Deep ultraviolet LED flip chip and preparation method thereof |
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