TWI570904B - Light-emitting diode device - Google Patents

Description

Light-emitting diode component

The present invention relates to a two-dimensional array of light-emitting diode elements, and more particularly to a two-dimensional array of high-voltage light-emitting diode elements having high light-emitting efficiency.

The principle and structure of the light-emitting diode (LED) are different from those of the traditional light source, and have the advantages of low power consumption, long component life, no need for warming time, fast reaction speed, etc., plus small size and vibration resistance. It is suitable for mass production, and it is easy to make small or array components with application requirements. It is widely used in the market. For example, an optical display device, a laser diode, a traffic sign, a data storage device, a communication device, a lighting device, and a medical device.

The conventional two-dimensional array light-emitting diode element 1 includes a transparent substrate 10 and a plurality of light-emitting diode units 12 extending in a two-dimensional direction and closely arranged in a transparent manner as shown in FIGS. 1A and 1B. On the substrate 10, each of the LED units 12 includes a p-type semiconductor layer 121, a light-emitting layer 122, and an n-type semiconductor layer 123. Since the transparent substrate 10 is not electrically conductive, the light-emitting diode units 12 can be insulated from each other after the trenches 14 are formed by etching between the plurality of light-emitting diode units 12, and a plurality of light-emitting diode units are partially etched. The 12-n semiconductor layer 123 has a first electrode 18 and a second electrode 16 formed on the exposed region of the n-type semiconductor layer 123 and the p-type semiconductor layer 121, respectively. The first electrode 18 and the second electrode 16 of the plurality of LED units 12 are selectively connected by the conductive wiring structure 19, so that a plurality of LED units 12 form a circuit connected in series or in parallel. The conductive wiring structure 19 may be air under the conductive wiring structure 19; before the conductive wiring structure 19 is formed, the chemical vapor may be between the surface of the epitaxial layer portion of the light emitting diode unit 12 and the epitaxial layer of the adjacent light emitting diode unit 12 The insulating layer 13 is deposited by techniques such as phase deposition (CVD), physical vapor deposition (PVD), sputtering, etc., as the protection of the epitaxial layer and the electrical insulation between the adjacent light-emitting diode units 12. The material of the insulating layer 13 is preferably, for example, a material such as alumina (Al 2 O 3 ), yttrium oxide (SiO 2 ), aluminum nitride (AlN), tantalum nitride (SiNx), or titanium dioxide (TiO 2 ), or a composite combination thereof.

However, when the circuit connection between the light-emitting diode units 12 is performed by the conductive wiring structure 19, the gap between the light-emitting diode unit 12 and the trench 14 is relatively large, and wire bonding is likely to occur when the conductive wiring structure 19 is formed. Bad or broken problems, which in turn affect component yield.

Further, the above-described light-emitting diode element 1 can be further combined with other elements to form a light-emitting apparatus. 11 is a schematic structural view of a conventional light-emitting device. As shown in FIG. 11, a light-emitting device 100 includes a sub-mount 110 having at least one circuit 101, and the light-emitting diode element 1 is bonded and fixed to On the secondary carrier 110; and an electrical connection structure 104 for electrically connecting the first electrode pad 16' of the light-emitting element 1, the second electrode pad 18' and the circuit 101 on the sub-carrier 110; The secondary carrier 110 may be a lead frame or a large-sized mounting substrate to facilitate circuit planning of the light-emitting device 100 and improve its heat dissipation effect. The electrical connection structure 104 described above may be a bonding wire or other bonding structure.

The invention provides a two-dimensional array light-emitting diode element, in particular to a two-dimensional array high-voltage light-emitting diode element with high light-emitting efficiency.

An embodiment of the present invention provides a two-dimensional array of light-emitting diode elements, including a transparent substrate having a first surface; a plurality of adjacent light-emitting units, each of the light-emitting units including a plurality of sides and a length of one circumference, and is disposed at And a plurality of conductive wiring structures electrically connected to the plurality of adjacent light emitting units disposed on the first surface; wherein each side of the light emitting unit has a plurality of vertical distances between the light emitting unit and the nearest light emitting unit. When the plurality of vertical distances are greater than 50 μm, the sides of the light emitting unit are not close to the nearest light emitting unit; wherein, the sum of the side lengths of each of the plurality of light emitting units and the nearest light emitting unit and the circumference of the light emitting unit The ratio is greater than 50%.

Another embodiment of the present invention provides a two-dimensional array of light emitting diode elements, including a transparent substrate having a first surface, and a plurality of light emitting units, wherein each of the light emitting units includes a first electrical semiconductor layer, and is configured On the first surface of the transparent substrate; a second electrical semiconductor layer; disposed on the first electrical semiconductor layer; and a light emitting layer disposed between the first electrical semiconductor layer and the second electrical semiconductor layer; And a plurality of conductive wiring structures electrically connected to the plurality of light emitting units and disposed on the first surface; wherein a spacing between the light emitting layers of each of the light emitting units is greater than 35 μm.

Embodiments of the present invention are described below in conjunction with the drawings. First, FIGS. 2A and 2B are a top view and a side view showing the two-dimensional array light-emitting diode element 2 of the first embodiment of the present invention. The two-dimensional array light-emitting diode element 2 has a transparent substrate 20 having a first surface 201 and a bottom surface 202, wherein the first surface 201 is opposite to the bottom surface 202. The transparent substrate 20 is not limited to a single material, and may be a composite transparent substrate in which a plurality of different materials are combined. For example, the transparent substrate 20 may include two first transparent substrates and a second transparent substrate (not shown) that are bonded to each other. In this embodiment, the material of the transparent substrate 20 is sapphire. However, the material of the transparent substrate 20 may include, but is not limited to, lithium aluminum oxide (LiAlO 2 ), zinc oxide (ZnO), gallium nitride (GaP), glass (Glass), and organic high. Molecular sheet, aluminum nitride (AlN). Next, on the first surface 201 of the transparent substrate 20, a plurality of arrays of two-dimensionally elongated light-emitting diode units 22 are formed. In this embodiment, the production method is as follows:

First, an n-type semiconductor layer 221, a light-emitting layer 222, and a p-type semiconductor layer 223 are sequentially formed on a growth substrate (not shown) by a conventional epitaxial growth process. In the present embodiment, the material of the growth substrate is gallium arsenide (GaAs). Of course, in addition to a gallium arsenide (GaAs) substrate, the material of the grown substrate may include, but is not limited to, germanium (Ge), indium phosphide (InP), sapphire, and silicon carbide. ), silicon, lithium aluminum oxide (LiAlO2), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride.

Then, after partially removing the epitaxial layer by the yellow light lithography process, the residual epitaxial layer forms an epitaxial layer portion of the plurality of light emitting diode units 22 arranged separately on the growth substrate as shown in FIG. 2B. structure. Wherein, the exposed region of the n-type semiconductor layer of each of the light-emitting diode units 22 is etched by a yellow light lithography process to serve as a formation platform for the subsequent electrode structure.

In order to increase the light extraction efficiency of the entire device, the epitaxial layer structure of the light emitting diode unit 22 is disposed on the transparent substrate 20 through a technique of substrate transfer and substrate bonding. The light-emitting diode unit 22 may be directly bonded to the transparent substrate 20 by heating or pressurization, or may be adhered to the transparent substrate 20 through a transparent adhesive layer (not shown). The transparent adhesive layer may be an organic polymer transparent adhesive material, such as polyimide, benzocyclobutene polymer (BCB), perfluorocyclobutyl polymer (PFCB), epoxy. A material such as Epoxy, Acrylic Resin, Polyester Resin (PET), Polycarbonate Resin (PC) or a combination thereof; or a transparent conductive oxidized metal layer such as indium tin oxide ( ITO), indium oxide (InO), tin oxide (SnO), tin oxide fluoride (FTO), antimony tin oxide (ATO), cadmium tin oxide (CTO), zinc aluminum oxide (AZO), cadmium-doped zinc oxide ( Material such as GZO) or a combination thereof; or an inorganic insulating layer such as alumina (Al2O3), tantalum nitride (SiNx), yttrium oxide (SiO2), aluminum nitride (AlN), titanium dioxide (TiO2), or the like, or a combination thereof .

In the present embodiment, the light-emitting diode unit 22 is bonded to the transparent substrate 20 by using a benzocyclobutene polymer (BCB) as a transparent adhesive layer. In fact, the method of disposing the LED unit 22 on the transparent substrate 20 is not limited thereto, and those having ordinary knowledge in the art should understand that the LED unit 22 can also be used according to different structural characteristics. The epitaxial growth mode is formed directly on a transparent substrate. Further, depending on the number of times of substrate transfer, a p-type semiconductor layer may be formed adjacent to the substrate, and the n-type semiconductor layer may have a structure in which a light-emitting layer is interposed on the p-type semiconductor layer.

Then, between the surface of the epitaxial layer portion of the light emitting diode unit 22 and the epitaxial layer of the adjacent light emitting diode unit 22, chemical vapor deposition (CVD), physical vapor deposition (PVD), sputtering (sputtering) The technique is deposited to form the insulating layer 23 as an electrical insulation between the protection of the epitaxial layer and the adjacent light-emitting diode unit 22. The material of the insulating layer 23 is preferably, for example, a material such as alumina (Al 2 O 3 ), cerium oxide (SiO 2 ), aluminum nitride (AlN), tantalum nitride (SiNx), or titanium oxide (TiO 2 ), or a composite combination thereof.

Thereafter, the first electrode 28, the second electrode 26, and the conductive are formed on the surface of the exposed region of the n-type semiconductor layer of the light emitting diode unit 22, the surface of the p-type semiconductor layer, and the first surface 201 of the transparent substrate by sputtering. The wiring structure 29 is electrically connected between the light emitting diode units 22. Taking the embodiment as an example, the first electrode 28 is formed on the exposed region of the n-type semiconductor layer of the first light-emitting diode unit 22, and the second electrode is formed on the p-type semiconductor layer 223 of the adjacent light-emitting diode unit 22. The electrode 26 and the conductive wiring structure 29 are formed between the two electrodes to electrically connect the two adjacent light emitting diode units 22 in series. The material of the conductive wiring structure 29 and the electrodes 26, 28 is preferably, for example, a metal such as gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminum (Al), platinum (Pt), nickel. (Ni), titanium (Ti), tin (Sn), etc., alloys thereof or a combination thereof. The material of the first electrode 28, the second electrode 26 and the conductive wiring structure 29 may be the same or different, and the structure may be a single process or may be performed by multiple processes.

In addition, as shown in FIG. 2A, in order to reduce the influence of the opaque metal structure on the light-emitting efficiency of the light-emitting diode element 2, the light-emitting diodes from the present embodiment are respectively determined according to different circuit designs. The two types of conductive wiring structures 29 are formed on the surface of the p-type semiconductor layer 223 and the n-type semiconductor layer 221 of the two light-emitting diode units 22, and the transparent substrate 20 extending beyond the epitaxial layer is first. A first electrode pad 26' and a second electrode pad 28' are formed on the surface 201. The two electrode pads can be electrically connected to an external power source by wire bonding or soldering. The process of forming the electrode pads 26', 28' may be performed in a single process with the forming electrodes 26, 28 and the conductive wiring structure 29, or may be performed by multiple processes. The material forming the electrode pads 26', 28' may be the same as or different from the material forming the electrodes 26, 28 or the conductive wiring structure 29, respectively.

Fig. 3 is an enlarged top view of the light-emitting diode unit 22. In this embodiment, each of the LED units 22 is rectangular, and has four side edges 22a, a length a, side 22b, length b, side 22c, length a, and sides. 22d, length is b. The circumference of the light-emitting diode unit 22 is the sum of the lengths of the four sides, that is, 2a+2b.

It is to be noted that in the present invention, in order to increase the light-emitting efficiency of the light-emitting diode element, the arrangement of the light-emitting diode units 22 is adjusted.

Among the conventional two-dimensional array light-emitting diode elements, when the distance between the light-emitting diode units 22 is too close, the light generated by the light-emitting diode unit is easily banded by the light-emitting diode unit. The similar semiconductor layers (especially the luminescent layer) are reabsorbed, which in turn affects the light extraction efficiency of the entire component.

In an embodiment of the invention, in order to reduce the re-absorption phenomenon between the light-emitting diode units, the distance between each of the different light-emitting diode units 22 is increased. Taking this embodiment as an example, since the energy bands between the light-emitting layers are similar, the re-absorption phenomenon is particularly remarkable. Therefore, the light-emitting layer spacing between the ten light-emitting diode units is adjusted to be greater than 35 μm based on the distance between the light-emitting layers. In addition, between adjacent light-emitting diode units 22, the adjacent proportion of the sides should be minimized. Taking FIG. 4A as an example, when the lateral vertical distance x between different light-emitting diode units 22 is greater than 50 μm, the chance of re-absorption between adjacent light-emitting diode units is low, so it can be defined as two sides. The sides are not similar. Such a definition can be widely applied to the structures of the light-emitting diode units 22 of different shapes. As shown in FIG. 4B, the circular light-emitting diode units 22 can also be appropriately two-dimensionally in a manner different from each other. The array is arranged on the substrate to reduce the chance of re-absorption between each other and increase the light-emitting efficiency of the light-emitting diode element.

Taking this embodiment as an example, we can infer that the side values of each of the light-emitting diode units 22 and other light-emitting diode units are not close to each other. The non-similar value α is defined as the ratio of the length of the side lengths to the circumference of a single light-emitting diode unit that is not similar to other light-emitting diode units. As shown in Fig. 5, we number ten light-emitting diode units 22 to calculate the non-similar value α of the light-emitting diode unit 22-1. The light emitting diode unit 22-1 and the lower side of the light emitting diode unit 22-2 are connected via the conductive wiring structure 29, and the vertical distance between the side 22-1c and the side 22-2d is less than or equal to 50 μm. When they are close to each other, the similar length is b. Similarly, the side 22-1d of the LED unit 22-1 and the side 22-3b of the left LED unit 22-3 are perpendicular to each other by less than 50 μm, and are also close to each other, and the similar length is b; The circumference of the light-emitting diode unit 22-1 is 2a+2b. In this embodiment, the side having the length of 2b is similar to the other light-emitting diode units, and the sum of the lengths of the side edges which are not close is (2a+2b)-2b=2a. Therefore, the close-in value α of the light-emitting diode unit 22-1 is 2a/(2a+2b). The same calculation formula can also be applied to the structure of the light-emitting diode unit 22 of different shapes. The side of the single light-emitting diode unit is divided into a plurality of points, and a tangent is made along the side of each point, and the vertical distance from the side of the nearest light-emitting diode unit is calculated for any point in the direction perpendicular to the tangential direction. After confirming the distance between each point and the nearest LED unit, all the dissimilar sides are summed in an integrated manner, and the obtained integral value is the sum of the side lengths that are not close, and the non-similar value α is Is the ratio of the integral value to the perimeter.

Taking FIG. 6A and FIG. 6B as an example, we can extend the calculation of whether each point of the light-emitting diode unit having an irregular shape is similar to other light-emitting diode units. When the shape of the light emitting diode unit is irregular, the vertical distance x from the side of the nearest light emitting diode unit is calculated by the direction perpendicular to the side of each side point on the side, when the side is an arc In the case of a shape, the arc is tangent to each point on the arc, and the vertical distance is calculated perpendicular to the tangent direction. In FIGS. 6A and 6B, the LED unit 32-1 and the LED unit 42-1 are respectively taken as an example, and the different positions of the side of the LED unit and the nearest LED unit 32 are indicated. The calculation of the vertical distance x between -2, 32-3, 42-2, and 42-3.

According to the experimental results, it can be found that when the cell non-similar value α of the light-emitting diode on the two-dimensional array light-emitting diode element is greater than 50%, the light-emitting diode element 2 can be closely arranged in a two-dimensional array. The light-emitting diode element 3 enhances the luminous efficiency by 5%, as shown in the comparison table of the luminous efficiency of the light-emitting diode element and the luminous energy of each of the light-emitting diode units as shown in FIG. When the side length a of each of the light-emitting diode elements 2 is 560 μm and the side length b is 290 μm, the non-similar value α is about 65%, and the light-emitting diode element 2 emits light. The efficiency is 10% higher than the conventionally arranged two-dimensional array of light-emitting diode elements.

In addition to the present embodiment, FIGS. 8A to 8C provide other embodiments of the two-dimensional array light-emitting diode elements which are composed of the arrangement of the light-emitting diode units having the non-similar values α greater than 50%.

In addition, in order to increase the light extraction efficiency of the entire component, we can also perform surface roughening on the first surface and/or the back surface of the transparent substrate by dry etching or wet etching to increase the light scattering and light emission probability. In addition, when the light emitting diode unit 22 is disposed on the transparent substrate 20, the position where the light emitting layer of the light emitting diode unit 22 is vertically projected on the first surface is the shortest between any side of the transparent substrate 20. The distance should preferably be greater than 20 μm to increase the chance of light being picked up from the transparent substrate 20.

Under the same spirit of the invention, we can join a series of series high-voltage light-emitting diode elements on a transparent substrate, and by using an appropriate two-microarray arrangement, it is also possible to increase the number of series high-voltage light-emitting diode elements. The effect of a non-similar value α of one light-emitting unit to form a two-dimensional array light-emitting diode element having high light-emitting efficiency.

Figures 9A through 9D show a series of series high voltage light emitting diode elements 4, 5, 6, and 7, respectively. Each of the high-voltage light-emitting diode elements includes four light-emitting diode units 42 , 52 , 62 , and 72 respectively formed on the substrates 40 , 50 , 60 , and 70 by epitaxial growth or bonding. Similar to the above structure, the first electrodes 46, 56, 66, 76 are formed on the exposed regions of the n-type semiconductor layers of the first light-emitting diode units 42, 52, 62, 72, and the conductive wiring structures 49, 59 are extended. , 69, 79 to another adjacent light emitting diode unit 42, 52, 62, 72, and forming a second electrode 48, 58, 68, 78 in the p-type semiconductor layer of the adjacent light emitting diode unit 42 In the above, two adjacent light emitting diode units 42, 52, 62, 72 are electrically connected in series. Among the single-series series high-voltage light-emitting diode elements 4, 5, 6, and 7, the two light-emitting diode units 42, 52, 62, and 72 at the end of the row are further formed with the first electrode pads 46, respectively. ', 56', 66', 76' and second electrode pads 48', 58', 68', 78' for electrically connecting with external components or power supplies.

We can arrange a plurality of series of high-voltage light-emitting diode elements 4, 5, 6, and 7 shown in the above-mentioned 9A to 9D with a transparent adhesive layer on a single transparent substrate 80, and a light-emitting diode. The body elements 4, 5, 6, and 7 can be electrically connected to each other through a wire bonding process or a yellow light process to form the conductive wiring structure 89. Under appropriate arrangement, a two-dimensional type that is closely arranged can be formed. The array light-emitting diode element has a two-dimensional array light-emitting diode element with a high in-phase value α to achieve a higher overall light-emitting efficiency of the element, as shown in FIG.

The examples of the invention are intended to be illustrative only and not to limit the scope of the invention. Any changes or modifications of the present invention to those skilled in the art will be made without departing from the spirit and scope of the invention.

1, 2, 3, 4, 5, 6, 7, 8‧‧‧Two-dimensional array light-emitting diode components
10, 20, 40, 50, 60, 70, 80‧‧ ‧ transparent substrate
12, 22, 42, 52, 62, 72, 22-1, 22-2, 22-3, 32-1, 32-2, 32-3, 42-1, 42-2, 42-3‧‧ Light-emitting diode unit
13, 23‧‧‧Insulation
101‧‧‧ Circuitry
104‧‧‧Electrical connection structure
110‧‧‧ times carrier
121, 223‧‧‧p type semiconductor layer
122, 222‧‧‧Lighting layer
123, 221‧‧‧n type semiconductor layer
14‧‧‧ Ditch
16, 26, 48, 58, 68, 78‧‧‧ second electrode
18, 28, 46, 56, 66, 76‧‧‧ first electrode
19, 29, 49, 59, 69, 79, 89‧‧‧ Conductive wiring structure
201‧‧‧ first surface
202‧‧‧ bottom
22a, 22b, 22c, 22d, 22-1c, 22-1d, 22-3b, 22-2d‧‧‧ side
16', 26', 46', 56', 66', 76' ‧ ‧ first electrode pads
18', 28', 48', 58', 68', 78'‧‧‧ second electrode pads
X‧‧‧vertical distance
a, b‧‧‧

1 is a structural diagram showing a side view of a conventional two-dimensional array of light-emitting diode elements;

2A is a structural diagram showing a top view of a two-dimensional array light-emitting diode element according to an embodiment of the invention;

2B is a structural diagram showing a side view of a two-dimensional array of light-emitting diode elements according to an embodiment of the present invention;

3 is a structural diagram showing a top view of a light emitting diode unit according to an embodiment of the invention;

4A-4B are schematic views showing a top view of a two-dimensional array light-emitting diode element according to an embodiment of the invention;

FIG. 5 is a structural diagram showing a top view of a two-dimensional array light-emitting diode element according to an embodiment of the invention; FIG.

6A-6B are schematic views showing a top view of a two-dimensional array light-emitting diode element according to another embodiment of the present invention;

Figure 7 is a table showing a comparison table of luminous efficiency and luminous energy of each of the light emitting diode units according to different two-dimensional array light emitting diode elements;

8A-8C is a structural diagram showing a top view of a two-dimensional array light-emitting diode element according to another embodiment of the present invention;

Figure 9A-9D is a structural diagram showing a top view of a series of high voltage light emitting diode elements in series.

Figure 10 is a block diagram showing a top view of a two-dimensional array of light-emitting diode elements in accordance with another embodiment of the present invention;

Figure 11 is a schematic view showing a conventional light-emitting device.

2‧‧‧Two-dimensional array light-emitting diode components

20‧‧‧Transparent substrate

201‧‧‧ first surface

22‧‧‧Lighting diode unit

221‧‧‧n type semiconductor layer

223‧‧‧p-type semiconductor layer

26‧‧‧First electrode

26'‧‧‧First electrode pad

28‧‧‧second electrode

28'‧‧‧Second electrode pad

29‧‧‧Electrical wiring structure

Claims (20)

A light-emitting diode device comprises: a substrate; a plurality of light-emitting diode units are disposed on the substrate; and a plurality of electrical connection structures are electrically connected to the plurality of light-emitting diode units; the two electrode pads are The plurality of light emitting diode units are surrounded. The illuminating diode device of claim 1, wherein the substrate has a peripheral region and a central region surrounded by the peripheral region, and the plurality of light emitting diode units are disposed in the peripheral region, and This central area does not have any light emitting diode elements. The light-emitting diode device according to claim 1 or 2, wherein the substrate is a transparent substrate. The light emitting diode device of claim 1 or 2, wherein the plurality of light emitting diode units are arranged to form a closed pattern. The light-emitting diode device according to claim 1 or 2, wherein a distance between each of the plurality of light-emitting diode units exceeds 35 μm. The light-emitting diode device according to claim 1 or 2, further comprising an adhesive layer formed between the substrate and the plurality of light-emitting diode units. The light-emitting diode device of claim 6, wherein the adhesive layer is a transparent adhesive layer. The light-emitting diode device of claim 7, wherein the material of the transparent adhesive layer comprises a polymer material or an oxide. The light-emitting diode device according to claim 1 or 2, wherein the substrate is a composite substrate. The illuminating diode device of claim 1 or 2, wherein each of the plurality of illuminating diode units comprises a first conductive semiconductor layer on the substrate, and a second conductive semiconductor layer is A first conductive semiconductor layer is disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and each of the electrical connection structures is disposed on two adjacent light emitting diode units And electrically connecting the first conductive semiconductor layer of one of the adjacent light emitting diodes to the second conductive semiconductor layer of another adjacent light emitting diode unit. The light-emitting diode device according to claim 1 or 2, wherein a shortest distance between the one of the plurality of light-emitting diode units and either side of the substrate is not less than 20 μm. The illuminating diode device of claim 1 or 2, wherein the substrate comprises a first side and a second side; wherein the second side is connected to the first side and the first side Extending in different directions, the total number of the plurality of light emitting diode units disposed along the first side is equal to the total number of the plurality of light emitting diode units disposed along the second side. The light-emitting diode device according to claim 1, further comprising a light-emitting diode unit surrounded by the plurality of light-emitting diode units. The light-emitting diode device according to claim 1 or 2, wherein the plurality of light-emitting diode units are substantially arranged in a lattice shape. The light-emitting diode device of claim 1 or 2, wherein each of the plurality of light-emitting diode units comprises a long side and a short side, and the electrical connection structure is disposed on two adjacent light-emitting diodes Between the short sides of the polar body unit. The light-emitting diode device of claim 1 or 2, wherein any one of the plurality of light-emitting diode units comprises a long side and a short side, and a length of the plurality of light-emitting diode units The sides are perpendicular to the long sides of the other of the plurality of light emitting diode units. The illuminating diode device of claim 1 or 2, further comprising an insulating layer partially formed on the plurality of illuminating diode units and located in two adjacent illuminating diode units between. The light-emitting diode device of claim 1 or 2, wherein the plurality of light-emitting diode units each comprise a growth substrate. The light-emitting diode device of claim 1, wherein the one of the plurality of light-emitting diode units separates the two electrode pads. The light-emitting diode device of claim 1, wherein two electrode pads are disposed on the substrate.