TWI622191B - Light-emitting diode device - Google Patents

Abstract

a light emitting diode element comprising: a substrate; a plurality of light emitting diode units formed on the substrate, wherein the plurality of light emitting diode units form a series array, and having n adjacent light emitting unit rows, wherein n≧ 3, and a plurality of light-emitting diode units located in the same light-emitting unit row of the plurality of light-emitting diode units are sequentially connected in a vertical series or a plurality of light-emitting diodes in the same light-emitting unit column in the plurality of light-emitting diode units The polar body units are sequentially connected in a horizontal manner, and the plurality of light emitting diode units in the same light emitting unit row are connected in the same direction; wherein the plurality of light emitting diode units comprise: a first contact light emitting diode a unit, located in a first row of light emitting cells in a row of n adjacent light emitting cells; a first wire electrode pad formed on the first contact light emitting diode unit; and a second contact light emitting diode a body unit located in an nth light emitting unit row among n adjacent light emitting unit rows; and a second wire electrode pad formed on the second contact light emitting diode unit; and a plurality of conductive wiring structures Connecting a plurality of light emitting diode units; wherein at least three of the first light emitting unit rows have the same first area, and at least three of the nth light emitting unit rows have the same one The second area, and the first area is not equal to the second area.

Description

Light-emitting diode component

The present invention relates to a light-emitting diode element, and more particularly to an array type light-emitting diode element having high light-emitting efficiency.

The principle and structure of the light-emitting diode (LED) are different from those of the traditional light source, and have the advantages of low power consumption, long component life, no need for warming time, fast reaction speed, etc., plus small volume, vibration resistance and suitable amount. Production, easy to meet the application requirements to make very small or array of components, the application in the market is quite extensive. For example, an optical display device, a laser diode, a traffic sign, a data storage device, a communication device, a lighting device, and a medical device.

The conventional high-voltage light-emitting diode element 1 includes a transparent substrate 10 and a plurality of light-emitting diode units 12 extending in a two-dimensional direction and closely arranged on the transparent substrate 10 as shown in FIGS. 1A and 1B. The epitaxial layer 120 of each of the light emitting diode units includes a first semiconductor layer 121, an active layer 122, and a second semiconductor layer 123. Since the transparent substrate 10 is not electrically conductive, the light-emitting diode units 12 can be insulated from each other by etching the trenches 14 between the plurality of light-emitting diode unit epitaxial layers 120, and then partially illuminating by partial etching. The diode unit epitaxially stacks 120 to the first semiconductor layer 121 to form a partially exposed region. Then, a conductive wiring structure 19 is formed on the exposed region of the first semiconductor layer 121 of the adjacent LED epitaxial layer 120 and the second semiconductor layer 123, including the first electrode 18 and the second electrode. 16. Each of the first electrode 18 and the second electrode 16 respectively includes a first electrode extension portion 180 and a second electrode The extending portions 160 are respectively formed on the first semiconductor layer 121 and the second semiconductor layer 123 of the epitaxial layer 120 of the adjacent light emitting diode unit to assist the uniform dispersion of the current into the semiconductor layer. The second semiconductor layer 123 and the first semiconductor layer 121 are selectively connected to the plurality of adjacent LED units 12 by the conductive wiring structure 19, so that a plurality of LED units 12 are connected in series or in parallel. Circuit. The conductive wiring structure 19 may be air underneath, or may be chemically gased between the surface of the epitaxial layer portion of the light emitting diode unit 12 and the epitaxial layer of the adjacent light emitting diode unit 12 before forming the conductive wiring structure 19. The insulating layer 13 is deposited by a technique such as phase deposition (CVD), physical vapor deposition (PVD), sputtering, etc., as an electrical insulation between the protection of the epitaxial layer and the adjacent light-emitting diode unit 12. The material of the insulating layer 13 is preferably, for example, alumina (Al 2 O 3 ), cerium oxide (SiO 2 ), aluminum nitride (AlN), tantalum nitride (SiNx), titanium oxide (TiO 2 ), tantalum pentoxide (Ta 2 O 5 ). ) or other materials or combinations thereof.

However, when the circuit connection between the light-emitting diode units 12 is performed by the conductive wiring structure 19, the gap between the light-emitting diode unit 12 and the trench 14 is relatively large, and wire bonding is likely to occur when the conductive wiring structure 19 is formed. Bad or broken problems, which in turn affect component yield.

Further, the above-described light-emitting diode element 1 can be further combined with other elements to form a light-emitting apparatus. Figure 2 is a schematic view showing the structure of a conventional light-emitting device. As shown in FIG. 2, a light-emitting device 100 includes a sub-mount 110 having at least one circuit 101 for carrying the above-mentioned light-emitting diode element 1; and an electrical connection structure 104 for electrical Connecting the first electrode pad 16' of the light-emitting element 1, the second electrode pad 18' and the circuit 101 on the secondary carrier 110; wherein the secondary carrier 110 may be a lead frame or a large-sized mosaic substrate ( The mounting substrate is used to facilitate the circuit planning of the light-emitting device 100 and to improve the heat dissipation effect thereof. The electrical connection structure 104 described above may be a bonding wire or other bonding structure.

a light emitting diode element comprising: a substrate; a plurality of light emitting diode units formed on the substrate, wherein the plurality of light emitting diode units form a series array, and having n adjacent light emitting unit rows, wherein n≧ 3, and a plurality of light-emitting diode units located in the same light-emitting unit row of the plurality of light-emitting diode units are sequentially connected in a vertical series or a plurality of light-emitting diodes in the same light-emitting unit column in the plurality of light-emitting diode units The polar body units are sequentially connected in a horizontal manner, and the plurality of light emitting diode units in the same light emitting unit row are connected in the same direction; wherein the plurality of light emitting diode units comprise: a first contact light emitting diode a unit, located in a first row of light emitting cells in a row of n adjacent light emitting cells; a first wire electrode pad formed on the first contact light emitting diode unit; and a second contact light emitting diode a body unit located in an nth light emitting unit row among n adjacent light emitting unit rows; and a second wire electrode pad formed on the second contact light emitting diode unit; and a plurality of conductive wiring structures Connecting a plurality of light emitting diode units; wherein at least three of the first light emitting unit rows have the same first area, and at least three of the nth light emitting unit rows have the same one The second area, and the first area is not equal to the second area.

a light emitting diode element comprising: a substrate; a plurality of light emitting diode units each having at least four edges formed on the substrate, wherein the plurality of light emitting diode units form a series array and have at least three adjacent And a plurality of conductive wiring structures connecting the plurality of light emitting diode units; wherein one of the plurality of light emitting diode units spans at least two adjacent plurality of light emitting unit rows, and the plurality of conductive wiring structures The two conductive wiring structures are located on the same edge of the light emitting diode unit, and connect the light emitting diode unit and the plurality of light emitting diode units in the rows of two adjacent light emitting units.

1‧‧‧Learning LED components

2, 3, 4, 5, 6, 7‧‧‧Lighting diode components

10‧‧‧Transparent substrate

12‧‧‧Lighting diode unit

13‧‧‧Insulation

14‧‧‧ Ditch

16‧‧‧second electrode

16'‧‧‧First electrode pad

160‧‧‧Second electrode extension

18‧‧‧First electrode

18'‧‧‧Second electrode pad

180‧‧‧First electrode extension

19‧‧‧Electrical wiring structure

20‧‧‧Substrate

201‧‧‧ first surface

202‧‧‧ second surface

22‧‧‧Lighting diode unit

23‧‧‧Insulation

220‧‧‧ epitaxial laminate

221‧‧‧First semiconductor layer

222‧‧‧Active layer

223‧‧‧Second semiconductor layer

26‧‧‧First electrode pad

28‧‧‧Second electrode pad

29‧‧‧Electrical wiring structure

100‧‧‧Lighting device

101‧‧‧ Circuitry

104‧‧‧Electrical connection structure

110‧‧‧ times carrier

120‧‧‧ epitaxial laminate

121‧‧‧First semiconductor layer

122‧‧‧Second semiconductor layer

123‧‧‧Second semiconductor layer

300‧‧‧Lighting elements

500‧‧‧Lighting Module

501‧‧‧Download

502‧‧‧ Carrier

503‧‧‧carrier

504, 506, 508, 510‧‧ lens

512, 514‧‧‧ power supply terminal

515‧‧‧through hole

517‧‧‧metal layer

519‧‧‧reflective layer

521‧‧‧ glue

540‧‧‧ Shell

600‧‧‧Light source generating device

900‧‧‧Light bulb

921‧‧‧ Shell

922‧‧‧ lens

923‧‧‧ Carrier

924‧‧‧Lighting module

925‧‧‧ bracket

926‧‧‧ radiator

927‧‧‧ tandem

928‧‧‧Electrical connector

B1‧‧‧First contact LED unit

B2‧‧‧First contact LED unit

R1-R6‧‧‧ lighting unit row

C1-C4‧‧‧Lighting unit column

[FIG. 1A] is a structural view showing a side view of a conventional array of light-emitting diode elements; [FIG. 1B] is a structural view showing a view of a conventional array of light-emitting diode elements; [Fig. 2] is a schematic view showing a structure of a conventional light-emitting device [Fig. 3A] is a structural view showing a side view of a light-emitting diode unit according to an embodiment of the present invention; [3B-3G] Figure 4 is a structural view showing a top view of a light-emitting diode unit according to an embodiment of the present invention; [Fig. 4A-4C] is a schematic view showing a light-emitting module; [Fig. 5A-5B] A schematic diagram of a light source generating device is shown; and [Fig. 6] is a schematic view of a light bulb.

The present invention discloses a structure of a light-emitting diode element. In order to make the description of the present invention more detailed and complete, please refer to the following description and the diagrams of FIGS. 3A to 6.

Embodiments of the present invention are described below in conjunction with the drawings. With the market demand, the volume of the light-emitting diode component is gradually reduced. When the area of each of the light emitting diode elements in the light emitting diode element is correspondingly reduced, the electrode formed on the light emitting surface of the light emitting diode unit, the electrode extending portion, and the opaque structure such as the conductive wiring structure are Corresponding to greatly affect the light extraction efficiency of the light-emitting diode unit.

First, FIGS. 3A and 3B are a side view and a top view of the array light-emitting diode element 2 of the first embodiment of the present invention. The light-emitting diode element 2 has a substrate 20 having a first surface 201 and a bottom surface 202, wherein the first surface 201 is opposite the bottom surface 202. Substrate 20 is not It is limited to a single material, and may be a composite substrate composed of a plurality of different materials. For example, the substrate 20 may include two first substrates and a second substrate (not shown) that are bonded to each other. In this embodiment, the material of the substrate 20 is sapphire. However, the material of the substrate 20 may include, but is not limited to, lithium aluminum oxide (LiAlO 2 ), zinc oxide (ZnO), gallium phosphide (GaP), glass (Glass), and organic polymer. Sheet, aluminum nitride (AlN), gallium arsenide (GaAs), diamond, quartz, silicon (Si), silicon carbide (SiC), diamond-like Diamond like carbon (DLC).

Next, on the first surface 201 of the substrate 20, a plurality of array type light emitting diode units 22 arranged in two dimensions are formed. The manner in which the array type light emitting diode unit 22 is fabricated is as follows:

First, an epitaxial layer 220 is formed on an epitaxial growth substrate (not shown) by a conventional epitaxial growth process, including a first semiconductor layer 221, an active layer 222, and a second semiconductor layer 223. The material of the growth substrate may include, but is not limited to, gallium arsenide (GaAs), germanium (Ge), indium phosphide (InP), sapphire, silicon carbide (SiC), germanium ( Silicon), lithium aluminum oxide (LiAlO2), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN). The material of the first semiconductor layer 221, the active layer 222, and the second semiconductor layer 223 may include one or more elements selected from the group consisting of gallium (Ga), aluminum (Al), indium (In), arsenic (As), and phosphorus. A group consisting of (P), nitrogen (N), and bismuth (Si). Commonly used materials are such as Group III nitrides such as aluminum gallium indium phosphide (AlGaInP) series and aluminum gallium indium nitride (AlGaInN) series, and zinc oxide (ZnO) series.

Next, a portion of the epitaxial stack is selectively removed by a yellow photolithography process to form a plurality of light emitting diode unit epitaxial stacks 220 arranged separately on the growth substrate, as shown in FIG. 3B. its The exposure region of each of the first semiconductor layers 221 of each of the light emitting diode units is etched by a yellow light lithography process to serve as a formation platform for the subsequent conductive wiring structures.

In order to increase the light-emitting efficiency of the entire device, the light-emitting diode unit epitaxial layer stack 220 may be disposed on the substrate 20 by a technique of substrate transfer and substrate bonding. The LED epitaxial laminate 220 may be directly bonded to the substrate 20 by heating or pressing, or may adhere the LED epitaxial laminate 220 to the substrate 20 through a transparent adhesive layer (not shown). Engage. The transparent adhesive layer may be an organic polymer transparent adhesive material, such as polyimide, benzocyclobutene polymer (BCB), perfluorocyclobutyl polymer (PFCB), epoxy. A material such as Epoxy, Acrylic Resin, Polyester Resin (PET), Polycarbonate Resin (PC) or a combination thereof; or a transparent conductive oxidized metal layer such as indium tin oxide ( ITO), indium oxide (InO), tin oxide (SnO2), zinc oxide (ZnO), tin oxide fluoride (FTO), antimony tin oxide (ATO), cadmium tin oxide (CTO), zinc aluminum oxide (AZO) , cadmium-doped zinc oxide (GZO) or other materials or a combination thereof; or an inorganic insulating layer, such as alumina (Al2O3), tantalum nitride (SiNx), yttrium oxide (SiO2), aluminum nitride (AlN), titanium dioxide (TiO2) ), materials such as Tantalum Pentoxide (Ta 2 O 5 ) or a combination thereof.

In practice, the method of disposing the epitaxial layer 220 of the light emitting diode unit on the substrate 20 is not limited thereto, and those having ordinary knowledge in the art should understand that the light emitting diode unit is different according to different structural characteristics. The epitaxial layer stack 220 can also be formed directly on the substrate 20 in a manner of epitaxial growth. Further, depending on the number of times of transfer of the substrate 20, the second semiconductor layer 223 may be formed adjacent to the first surface 201 of the substrate, and the first semiconductor layer 221 may be on the second semiconductor layer 223 with the active layer 222 interposed therebetween.

Next, a portion of the surface of the epitaxial layer 220 of the light emitting diode unit and the epitaxial layer 220 of the adjacent light emitting diode unit are subjected to chemical vapor deposition (CVD), physical vapor deposition (PVD), or sputtering. Techniques such as sputtering are used to form the insulating layer 23 as a protection and phase of the epitaxial layer. Electrical insulation between adjacent light emitting diode units 22. The material of the insulating layer 23 is preferably, for example, aluminum oxide (Al 2 O 3 ), cerium oxide (SiO 2 ), aluminum nitride (AlN), tantalum nitride (SiNx), titanium oxide (TiO 2 ), tantalum pentoxide (Tatalum Pentoxide, Ta 2 O 5 ). ) or other materials or composite combinations thereof.

Thereafter, a plurality of conductive wiring structures 29 which are completely separated from each other are formed on the surface of the first semiconductor layer 221 of the two adjacent light-emitting diode units 22 and the surface of the second semiconductor layer 223, respectively, by sputtering. The plurality of conductive wiring structures 29 which are completely separated from each other are disposed on the first semiconductor layer 221 in a single direction, are in direct contact with the first semiconductor layer 221, and are electrically connected to the conductive wiring structures 29 through the first semiconductor layer 221. The conductive wiring structure 29 which is spatially separated from each other continues to extend to the second semiconductor layer 223 of the other adjacent light emitting diode unit 22, and the other end and the second semiconductor layer of the light emitting diode unit 22 223 is electrically connected to form two adjacent light emitting diode units 22 electrically connected in series.

In fact, the method of electrically connecting the adjacent light-emitting diode units 22 is not limited thereto, and those having ordinary knowledge in the art should understand that the two ends of the conductive wiring structure are respectively disposed on different light-emitting diodes. On the semiconductor layer of the same or different conductive polarity of the polar body unit, an electrical connection structure in parallel or in series may be formed between the light emitting diode units.

From the top view of FIG. 3B, in the circuit design, a series of serial arrays of light emitting diode elements 2 are disposed on the first semiconductor layer 221 of the first contact light emitting diode unit B1 at the end of the series array circuit. A first electrode pad 26 is formed. In an embodiment, the second electrode pad 28 may also be formed on the second semiconductor layer 223 of the second contact light emitting diode unit B2 at the other end of the series array circuit. The first electrode pad 26 and the second electrode pad 28 can be electrically connected to an external power source or other circuit components by wire bonding or soldering. The process of forming the first electrode pad 26 and the second electrode pad 28 may be performed in the same forming process as the conductive wiring structure 29, or may be completed by multiple processes. The material forming the first electrode pad 26 and the second electrode pad 28 may be the same as or different from the material forming the conductive wiring structure 29, respectively. among them, In order to achieve a certain degree of conductivity, the first electrode pad 26, the second electrode pad 28 and the conductive wiring structure 29 are preferably made of a metal such as gold (Au), silver (Ag), copper (Cu), or chromium. (Cr), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), tin (Sn), etc., alloys thereof or a combination thereof.

In an embodiment, in view of the top view of FIG. 3B, each of the LED units 22 of the LED component 2 is arranged in a series array in circuit design and has four adjacent rows of LEDs R1. -R4, and four adjacent light-emitting unit columns C1-C4. In this embodiment, each of the light emitting diode units 22 of the first light emitting unit row R1 is connected in series with each other in the vertical direction from the second contact light emitting diode unit B2, and is horizontally connected through the first row and the fourth column R1C4. The second row and the fourth column R2C4 are connected to the second row and the first column R2C1 in the vertical direction by the second row and the fourth column R2C4, and then horizontally connected to the third row and the first column R3C1. Next, as shown in FIG. 3B, between the third row and the fourth row, the LED unit 22 becomes a vertical and horizontal phase connection with the adjacent LED unit, such as the third row. A column R3C1 is horizontally connected in series with the fourth row and the first column R4C1, and then the fourth row first column R4C1 and the fourth row second column R4C2 are vertically connected; then, the fourth row and the second column R4C2 and the third row The second column R3C2 is horizontally connected, then the third row and the second column R3C2 are vertically connected in series with the third row and the third column R3C3, and the third row and the third column R3C3 are horizontally connected with the fourth row and third column R4C3. In series, the fourth row and the third column R4C3 are vertically connected in series with the fourth row and fourth column R4C4. Finally, the fourth row and fourth column R4C4 are horizontally connected with the third row and fourth column R3C4, and formed. A first electrode pad 26 is formed on the first semiconductor layer 221 of the third row and fourth column R3C4 to form a first contact LED unit B1.

In this embodiment, the LEDs of at least three first rows are in the same direction as the LEDs of the at least three second rows, and in this embodiment are vertically connected; The LEDs of the third row and the fourth column are vertically and horizontally connected in series with the LED units of the adjacent rows, and the first contact LED unit B1 and the second contact are illuminated. The diode unit B2 is not formed on the geometric diagonal of the light-emitting diode element 2.

3C is a top view showing a second embodiment of the present invention. In this embodiment, each of the LED units 22 of the LED component 3 is arranged in a series array and has four phases. The adjacent light-emitting unit rows R1-R4, and the four adjacent light-emitting unit rows C1-C4 are manufactured in the same manner as the first embodiment, and are not described herein again.

In this embodiment, the first row and the second row are connected in the same manner as the first embodiment, that is, each of the light emitting diode units 22 of the first light emitting unit row R1 is from the second contact light emitting diode unit B2. Starting in series with each other in a vertical direction, and at least three LEDs of the first row are connected in the same direction as the LED diodes of at least three of the second rows, and in this embodiment are vertically connected .

In order to form the second contact light emitting diode unit B1 in the fourth column, in the present embodiment, the circuit of the third and fourth columns of the light emitting diode unit is different from the first embodiment. In the third row and the third column R3C3 and the third row and the fourth column R3C4 are also vertically connected in series, the remaining adjacent rows of the LED unit are vertically and horizontally connected in series, and form a first electrode lining. The pad 26 is formed on the first semiconductor layer 221 of the fourth row and the third column R4C3 to form a first contact LED unit B1. The first contact light-emitting diode unit B1 and the second contact light-emitting diode unit B2 are not formed on the geometric diagonal of the light-emitting diode element 3.

3D is a top view showing a third embodiment of the present invention. In this embodiment, each of the LED units 22 of the LED component 4 is arranged in a series array and has five phases. The adjacent light-emitting unit rows R1-R5 are manufactured in the same manner as the first embodiment, and are not described herein again.

In this embodiment, the respective light emitting diode units are connected in series to the first contact light emitting diode unit B1 by the second contact light emitting diode unit B2. Each of the light emitting diode units of each of the light emitting unit rows R1 - R5 is connected in series with each other in a vertical direction, and the last one of the light emitting units connected in series is connected in series with the adjacent behavior level. That is, at least three LED units of each row The LEDs of the adjacent rows of at least three adjacent rows are in the same direction, and are vertically connected in this embodiment.

In this embodiment, in order to make the current density of each of the light emitting diode units more uniform, each of the light emitting diode units including the first light emitting unit row R1 of the second contact light emitting diode unit B2 may have a first area. Each of the second to fourth light emitting cell rows R2-R4 including the light emitting diode unit may have a second area, and the fifth light emitting unit row including the first contact light emitting diode unit B1 Each of the light emitting diode units of R5 may have a third area, wherein the first area, the second area, and the third area are not equal.

In one embodiment, the difference between the first area, the second area, or the third area is less than 20%. In another embodiment, the first light emitting unit row R1 including the second contact light emitting diode unit B2 may have a plurality of light emitting diode units, and only the second to fourth light emitting unit rows of the light emitting diode unit Any one of R2-R4 may have β light-emitting diode units, and the fifth light-emitting unit row R5 including the first contact light-emitting diode unit B1 may have γ light-emitting diode units, wherein α, β, and γ Not equal to each other. In another embodiment, the first contact light emitting diode unit B1 and the second contact light emitting diode unit B2 may be located above the geometric diagonal of the light emitting diode element 4.

FIG. 3E is a top view showing a fourth embodiment of the present invention, and is a modification of the first embodiment. In this embodiment, each of the LED units of the LED component 5 has a circuit design. The array is arranged in series and has six adjacent rows of light-emitting units R1-R6, and the manufacturing method and material thereof are the same as those in the first embodiment, and details are not described herein again.

In this embodiment, at least three of the light emitting diode units are in the same direction in any one of the first to fourth light emitting unit rows, and in the present embodiment are vertically connected; and in the fifth column and The sixth column of the LED unit is vertical and horizontal with the adjacent row of LED units. The phases are connected in series, and the first contact light-emitting diode unit B1 and the second contact light-emitting diode unit B2 are not formed on the geometric diagonal of the light-emitting diode element 5.

Different from the first embodiment, in the embodiment, the first light emitting unit row R1 including the second contact light emitting diode unit B2 may have α light emitting diode units, and only include the light emitting diode unit. Any one of the second to fourth and sixth light emitting cell rows R2-R4, R6 may have β light emitting diode cells, and the fifth light emitting cell row R5 including the first contact light emitting diode cell B1 may have γ Light-emitting diode units, where α ≠ β = γ.

FIG. 3F is a top view showing a fifth embodiment of the present invention. In this embodiment, each of the LED units of the LED component 6 is arranged in a series array and has three adjacent lines. The light-emitting unit rows R1-R3 are manufactured in the same manner as the first embodiment, and are not described herein again.

In this embodiment, at least three of the light emitting diode units are in the same direction in any one of the first to third light emitting unit rows, and are vertically connected in this embodiment. In this embodiment, the last LED unit of each row of the light-emitting unit can be vertically connected with the adjacent LED unit, and the first contact LED unit B1 and the second The contact light-emitting diode unit B2 is formed on the geometric diagonal of the light-emitting diode element 6.

In this embodiment, two conductive wiring structures 29 having at least one light emitting diode unit in each of the light emitting unit rows are formed on the same side edge of the light emitting diode unit, and can simultaneously emit light with two adjacent lights. The cell rows are simultaneously vertically connected. In another embodiment, at least two of the light emitting diode cells in each row of light emitting cells have different areas, and/or different aspect ratios.

3G is a top view showing a sixth embodiment of the present invention. In this embodiment, each of the LED units of the LED component 7 is arranged in a series array and has three adjacent lines. The light-emitting unit rows R1-R3 are manufactured in the same manner as the first embodiment, and are not described herein again.

In this embodiment, each of the light emitting unit rows has at least three light emitting diode units having a first area, and the at least three light emitting diode units of the third light emitting unit row have a second area, and the first area Not equal to the second area.

4A to 4C are diagrams showing a lighting module, and FIG. 4A is an external perspective view of a lighting module. The lighting module 500 can include a carrier 502, which is generated from any embodiment of the present invention. A light-emitting element (not shown), a plurality of lenses 504, 506, 508, and 510, and two power supply terminals 512 and 514.

4B-4C is a cross-sectional view of a light emitting module, and FIG. 4C is an enlarged view of an E area of FIG. 4B. The carrier 502 can include an upper carrier 503 and a download body 501, wherein one surface of the download body 501 can be in contact with the upper carrier 503, and the lenses 504 and 508 are formed on the upper carrier 503. The upper carrier 503 can form at least one through hole 515, and the light emitting diode elements 2, 3, 4, 5 formed according to the embodiment of the present invention can be formed in the through hole 515 and contact with the download body 501, and the rubber material 521 is used. Surrounding, and forming a lens 508 over the glue 521.

5A-5B is a schematic diagram 600 of a light source generating device 600. A light source generating device 600 can include a light emitting module 500, a housing 540, and a power supply system (not shown) for supplying a current to the light emitting module 600. And a control element (not shown) for controlling the power supply system (not shown). The light source generating device 600 can be a lighting device, such as a street light, a car light or an indoor lighting source, or a backlight source of a traffic sign or a backlight module in a flat display.

Figure 6 is a schematic view of a light bulb. The light bulb 900 includes a housing 921, a lens 922, a lighting module 924, a bracket 925, a heat sink 926, a series of junctions 927 and an electrical connector 928. The illumination module 924 includes a carrier 923 and includes at least one of the LED components 2, 3, 4, 5 of the above embodiment on the carrier 923.

In an embodiment of the invention, a buffer layer (not shown) may be selectively included between the first semiconductor layer 221 and the substrate 20. This buffer layer is between two material systems In the meantime, the material system of the substrate is "transitioned" to the material system of the semiconductor system. For the structure of the light-emitting diode, on the one hand, the buffer layer is used to reduce the material layer of the lattice mismatch between the two materials. In another aspect, the buffer layer may also be a single layer, a plurality of layers or a structure for combining two materials or two separate structures, such as organic materials, inorganic materials, metals, and semiconductors; The selected structure is: reflective layer, thermally conductive layer, conductive layer, ohmic contact layer, anti-deformation layer, stress release layer, stress adjustment layer, bonding layer, wavelength Conversion layer, mechanical fixing structure, etc.

A contact layer (not shown) is more selectively formed on the epitaxial laminate 220. The contact layer is disposed on one side of the epitaxial layer 220 away from the substrate 20. In particular, the contact layer can be an optical layer, an electrical layer, or a combination of both. The optical layer can alter the electromagnetic radiation or light from or into the active layer 222. As used herein, "change" means changing at least one optical property of electromagnetic radiation or light, including but not limited to frequency, wavelength, intensity, flux, efficiency, color temperature, rendering index, light field. (light field), and angle of view. The electrical layer system may change or change the value, density, distribution of at least one of voltage, resistance, current, and capacitance between opposite sides of any one of the contact layers. The constituent material of the contact layer comprises an oxide, a conductive oxide, a transparent oxide, an oxide having a transmittance of 50% or more, a metal, a relatively light-transmissive metal, a metal having a transmittance of 50% or more, an organic substance, At least one of an inorganic substance, a phosphor, a phosphor, a ceramic, a semiconductor, a doped semiconductor, and an undoped semiconductor. In some applications, the material of the contact layer is at least one of indium tin oxide, cadmium tin oxide, antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide. In the case of a relatively light-transmitting metal, the thickness thereof is preferably about 0.005 μm to 0.6 μm. In one embodiment, the contact layer has a better lateral current spreading rate that can be used to assist in the uniform diffusion of current into the epitaxial stack 220. Generally, the impurities blended according to the contact layer vary depending on the manner of the process, and the width of the energy gap may be between 0.5 eV and 5 eV.

The above figures and descriptions are only corresponding to specific embodiments, however, the elements, embodiments, design criteria, and technical principles described or disclosed in the various embodiments are inconsistent, contradictory, or difficult to implement together. In addition, we may use any reference, exchange, collocation, coordination, or merger as required. Although the invention has been described above, it is not intended to limit the scope of the invention, the order of implementation, or the materials and process methods used. Various modifications and variations of the present invention are possible without departing from the spirit and scope of the invention.

Claims (10)

A light emitting diode device comprising: a substrate; a plurality of light emitting diode units formed on the substrate, wherein the plurality of light emitting diode units form a series array and have n adjacent light emitting unit rows, wherein n≧3, and a plurality of light emitting diode units in the same light emitting unit row of the plurality of light emitting diode units are sequentially connected in a vertical series or the plurality of light emitting diode units are located in the same light emitting unit column The plurality of light emitting diode units are sequentially connected in series, and the plurality of light emitting diode units located in the same light emitting unit row are connected in the same direction; wherein the plurality of light emitting diode units comprise: a first contact light emitting diode unit located in a first light emitting unit row of the n adjacent light emitting unit rows; a first wire electrode pad formed in the first contact light emitting diode unit a second contact light emitting diode unit located in an nth light emitting cell row of the n adjacent light emitting cell rows; and a second wire electrode pad formed on the second contact light emitting diode Body unit And a plurality of conductive wiring structures connecting the plurality of light emitting diode units; wherein at least three of the light emitting diode units of the first light emitting unit row have the same first area, and the nth light emitting unit At least three of the light emitting diode units in the row have the same second area, and the first area is not equal to the second area. The light-emitting diode element according to claim 1, wherein each of the light-emitting diodes of the second to n-1th light-emitting unit rows of the n adjacent light-emitting unit rows The unit has a third area, and the third area is not equal to the first area, and/or the second area. The illuminating diode component of claim 1, wherein the difference between the first area and the second area is less than 20%. The light-emitting diode element according to claim 1, wherein the first light-emitting unit row has α light-emitting diode units, and the n-th light-emitting unit row has β light-emitting diode units, and α Not equal to β. The illuminating diode component of claim 1, wherein the first contact illuminating diode unit and the second contact illuminating diode unit are not located at a geometric diagonal of the illuminating diode component. on. The light emitting diode device of claim 1, wherein the first contact light emitting diode unit and the second contact light emitting diode unit are respectively located on a first side of the light emitting diode element and On a second side of the first side, or on a first side of the first LED and adjacent to a second side of the first side. The light emitting diode device of claim 1, wherein the plurality of light emitting diode units comprise: a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and An active layer is formed between the first semiconductor layer and the second semiconductor layer; wherein the first wire electrode pad is formed on the second semiconductor layer of the first contact light emitting diode unit, wherein the first A second wire electrode pad is formed on the first semiconductor layer of the second contact LED unit, and an area of the second contact LED unit is larger than an area of the first contact LED unit. A light emitting diode element comprising: a substrate; a plurality of light emitting diode units each having at least four edges formed on the substrate, wherein the plurality of light emitting diode units form a series array and have at least three And a plurality of conductive wiring structures connected to the plurality of light emitting diode units; wherein one of the plurality of light emitting diode units spans at least two adjacent ones of the plurality of light emitting unit rows, And the two conductive wiring structures in the plurality of conductive wiring structures are located on the same edge of the light emitting diode unit, and connect the light emitting diode unit and the plurality of light emitting diode units in the two adjacent light emitting unit rows. The light emitting diode device of claim 8, further comprising: a first contact light emitting diode unit formed on the substrate; a first wire electrode pad formed on the first contact light emitting diode a second contact light emitting diode unit formed on the substrate; and a second wire electrode pad formed on the second contact light emitting diode unit; wherein the first contact light is emitted The diode unit and the second contact LED unit are respectively formed at the beginning and the end of the series array. The light-emitting diode element according to claim 1 or 8, wherein the plurality of light-emitting diode units comprise: a first semiconductor layer, and a second semiconductor layer formed on the first semiconductor layer And an active layer formed between the first semiconductor layer and the second semiconductor layer; wherein any two of the plurality of conductive wiring structures are completely separated from each other, and one of the plurality of conductive wiring structures is formed at the end The other end of the semiconductor layer is formed on the other of the light emitting diode units and directly contacts one of the semiconductor layers included in the other of the light emitting diode units.